CN106560745A - 曝光装置、曝光方法和器件的制造方法 - Google Patents

曝光装置、曝光方法和器件的制造方法 Download PDF

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Publication number
CN106560745A
CN106560745A CN201610870966.XA CN201610870966A CN106560745A CN 106560745 A CN106560745 A CN 106560745A CN 201610870966 A CN201610870966 A CN 201610870966A CN 106560745 A CN106560745 A CN 106560745A
Authority
CN
China
Prior art keywords
exposure
substrate
mark
light
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610870966.XA
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English (en)
Chinese (zh)
Inventor
籔伸彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN106560745A publication Critical patent/CN106560745A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201610870966.XA 2015-10-06 2016-09-30 曝光装置、曝光方法和器件的制造方法 Pending CN106560745A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-198420 2015-10-06
JP2015198420A JP2017072678A (ja) 2015-10-06 2015-10-06 露光装置、露光方法、及び物品の製造方法

Publications (1)

Publication Number Publication Date
CN106560745A true CN106560745A (zh) 2017-04-12

Family

ID=58485736

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610870966.XA Pending CN106560745A (zh) 2015-10-06 2016-09-30 曝光装置、曝光方法和器件的制造方法

Country Status (4)

Country Link
JP (1) JP2017072678A (enExample)
KR (1) KR20170041145A (enExample)
CN (1) CN106560745A (enExample)
TW (1) TWI655511B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7453790B2 (ja) * 2020-01-15 2024-03-21 キヤノン株式会社 露光装置、および物品の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5604354A (en) * 1993-04-27 1997-02-18 Sgs-Thomson Microelectronics S.A. Masks for a double-side exposure machine
CN101546134A (zh) * 2008-03-25 2009-09-30 纽富来科技股份有限公司 电子束描绘装置和电子束描绘方法
WO2010042230A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary alignment marks for imprint lithography
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
JP5499398B2 (ja) * 2009-05-11 2014-05-21 Ｎｓｋテクノロジー株式会社 露光装置及び露光方法
US8952454B2 (en) * 2012-02-23 2015-02-10 Mitsubishi Electric Corporation SOI wafer and method of manufacturing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3467031B2 (ja) * 1993-11-12 2003-11-17 キヤノン株式会社 走査型露光装置及び該走査型露光装置を用いるデバイス製造方法
JPH0883744A (ja) * 1994-09-09 1996-03-26 Nikon Corp 走査型露光装置
JPH11133621A (ja) * 1997-10-29 1999-05-21 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
WO1999050712A1 (en) * 1998-03-26 1999-10-07 Nikon Corporation Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device
JP2001215718A (ja) * 1999-11-26 2001-08-10 Nikon Corp 露光装置及び露光方法
JP2006196559A (ja) * 2005-01-12 2006-07-27 Nikon Corp 露光装置及びマイクロデバイスの製造方法
NL2005996A (en) * 2010-02-19 2011-08-22 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5604354A (en) * 1993-04-27 1997-02-18 Sgs-Thomson Microelectronics S.A. Masks for a double-side exposure machine
CN101546134A (zh) * 2008-03-25 2009-09-30 纽富来科技股份有限公司 电子束描绘装置和电子束描绘方法
WO2010042230A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary alignment marks for imprint lithography
JP5499398B2 (ja) * 2009-05-11 2014-05-21 Ｎｓｋテクノロジー株式会社 露光装置及び露光方法
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
US8952454B2 (en) * 2012-02-23 2015-02-10 Mitsubishi Electric Corporation SOI wafer and method of manufacturing the same

Also Published As

Publication number Publication date
KR20170041145A (ko) 2017-04-14
TWI655511B (zh) 2019-04-01
TW201714024A (zh) 2017-04-16
JP2017072678A (ja) 2017-04-13

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