KR20170041145A - 노광 장치, 노광 방법 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법 및 디바이스 제조 방법 Download PDF

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Publication number
KR20170041145A
KR20170041145A KR1020160128189A KR20160128189A KR20170041145A KR 20170041145 A KR20170041145 A KR 20170041145A KR 1020160128189 A KR1020160128189 A KR 1020160128189A KR 20160128189 A KR20160128189 A KR 20160128189A KR 20170041145 A KR20170041145 A KR 20170041145A
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KR
South Korea
Prior art keywords
mark
substrate
exposure
light
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020160128189A
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English (en)
Korean (ko)
Inventor
노부히코 야부
Original Assignee
캐논 가부시끼가이샤
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Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20170041145A publication Critical patent/KR20170041145A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020160128189A 2015-10-06 2016-10-05 노광 장치, 노광 방법 및 디바이스 제조 방법 Withdrawn KR20170041145A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-198420 2015-10-06
JP2015198420A JP2017072678A (ja) 2015-10-06 2015-10-06 露光装置、露光方法、及び物品の製造方法

Publications (1)

Publication Number Publication Date
KR20170041145A true KR20170041145A (ko) 2017-04-14

Family

ID=58485736

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160128189A Withdrawn KR20170041145A (ko) 2015-10-06 2016-10-05 노광 장치, 노광 방법 및 디바이스 제조 방법

Country Status (4)

Country Link
JP (1) JP2017072678A (enExample)
KR (1) KR20170041145A (enExample)
CN (1) CN106560745A (enExample)
TW (1) TWI655511B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7453790B2 (ja) * 2020-01-15 2024-03-21 キヤノン株式会社 露光装置、および物品の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2704660B1 (fr) * 1993-04-27 1995-07-13 Sgs Thomson Microelectronics Masques pour une machine d'insolation double face.
JP3467031B2 (ja) * 1993-11-12 2003-11-17 キヤノン株式会社 走査型露光装置及び該走査型露光装置を用いるデバイス製造方法
JPH0883744A (ja) * 1994-09-09 1996-03-26 Nikon Corp 走査型露光装置
JPH11133621A (ja) * 1997-10-29 1999-05-21 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
WO1999050712A1 (en) * 1998-03-26 1999-10-07 Nikon Corporation Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device
JP2001215718A (ja) * 1999-11-26 2001-08-10 Nikon Corp 露光装置及び露光方法
JP2006196559A (ja) * 2005-01-12 2006-07-27 Nikon Corp 露光装置及びマイクロデバイスの製造方法
JP5203992B2 (ja) * 2008-03-25 2013-06-05 株式会社ニューフレアテクノロジー 電子ビーム描画装置及び電子ビーム描画方法
US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
JP5499398B2 (ja) * 2009-05-11 2014-05-21 Ｎｓｋテクノロジー株式会社 露光装置及び露光方法
CN102156392A (zh) * 2010-02-11 2011-08-17 中芯国际集成电路制造(上海)有限公司 光刻机对准参数的检测装置及其检测方法
NL2005996A (en) * 2010-02-19 2011-08-22 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5933289B2 (ja) * 2012-02-23 2016-06-08 三菱電機株式会社 Ｓｏｉウエハおよびその製造方法

Also Published As

Publication number Publication date
CN106560745A (zh) 2017-04-12
TWI655511B (zh) 2019-04-01
TW201714024A (zh) 2017-04-16
JP2017072678A (ja) 2017-04-13

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