TWI655511B - 曝光設備、曝光方法及製造裝置的方法 - Google Patents
曝光設備、曝光方法及製造裝置的方法 Download PDFInfo
- Publication number
- TWI655511B TWI655511B TW105130643A TW105130643A TWI655511B TW I655511 B TWI655511 B TW I655511B TW 105130643 A TW105130643 A TW 105130643A TW 105130643 A TW105130643 A TW 105130643A TW I655511 B TWI655511 B TW I655511B
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- substrate
- light
- exposure apparatus
- optical system
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 8
- 238000005259 measurement Methods 0.000 claims abstract description 77
- 230000003287 optical effect Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000012937 correction Methods 0.000 claims abstract description 15
- 238000005286 illumination Methods 0.000 claims abstract description 13
- 239000003550 marker Substances 0.000 claims abstract description 12
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000005357 flat glass Substances 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000021615 conjugation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-198420 | 2015-10-06 | ||
| JP2015198420A JP2017072678A (ja) | 2015-10-06 | 2015-10-06 | 露光装置、露光方法、及び物品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201714024A TW201714024A (zh) | 2017-04-16 |
| TWI655511B true TWI655511B (zh) | 2019-04-01 |
Family
ID=58485736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105130643A TWI655511B (zh) | 2015-10-06 | 2016-09-22 | 曝光設備、曝光方法及製造裝置的方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017072678A (enExample) |
| KR (1) | KR20170041145A (enExample) |
| CN (1) | CN106560745A (enExample) |
| TW (1) | TWI655511B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7453790B2 (ja) * | 2020-01-15 | 2024-03-21 | キヤノン株式会社 | 露光装置、および物品の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1083462A1 (en) * | 1998-03-26 | 2001-03-14 | Nikon Corporation | Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device |
| US20110205513A1 (en) * | 2010-02-19 | 2011-08-25 | Asml Netherlands B.V. | Lithographic Apparatus and Device Manufacturing Method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2704660B1 (fr) * | 1993-04-27 | 1995-07-13 | Sgs Thomson Microelectronics | Masques pour une machine d'insolation double face. |
| JP3467031B2 (ja) * | 1993-11-12 | 2003-11-17 | キヤノン株式会社 | 走査型露光装置及び該走査型露光装置を用いるデバイス製造方法 |
| JPH0883744A (ja) * | 1994-09-09 | 1996-03-26 | Nikon Corp | 走査型露光装置 |
| JPH11133621A (ja) * | 1997-10-29 | 1999-05-21 | Canon Inc | 投影露光装置及びそれを用いたデバイスの製造方法 |
| JP2001215718A (ja) * | 1999-11-26 | 2001-08-10 | Nikon Corp | 露光装置及び露光方法 |
| JP2006196559A (ja) * | 2005-01-12 | 2006-07-27 | Nikon Corp | 露光装置及びマイクロデバイスの製造方法 |
| JP5203992B2 (ja) * | 2008-03-25 | 2013-06-05 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
| US20100092599A1 (en) * | 2008-10-10 | 2010-04-15 | Molecular Imprints, Inc. | Complementary Alignment Marks for Imprint Lithography |
| JP5499398B2 (ja) * | 2009-05-11 | 2014-05-21 | Ｎｓｋテクノロジー株式会社 | 露光装置及び露光方法 |
| CN102156392A (zh) * | 2010-02-11 | 2011-08-17 | 中芯国际集成电路制造(上海)有限公司 | 光刻机对准参数的检测装置及其检测方法 |
| JP5933289B2 (ja) * | 2012-02-23 | 2016-06-08 | 三菱電機株式会社 | Ｓｏｉウエハおよびその製造方法 |
-
2015
- 2015-10-06 JP JP2015198420A patent/JP2017072678A/ja active Pending
-
2016
- 2016-09-22 TW TW105130643A patent/TWI655511B/zh not_active IP Right Cessation
- 2016-09-30 CN CN201610870966.XA patent/CN106560745A/zh active Pending
- 2016-10-05 KR KR1020160128189A patent/KR20170041145A/ko not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1083462A1 (en) * | 1998-03-26 | 2001-03-14 | Nikon Corporation | Exposure method and system, photomask, method of manufacturing photomask, micro-device and method of manufacturing micro-device |
| US20110205513A1 (en) * | 2010-02-19 | 2011-08-25 | Asml Netherlands B.V. | Lithographic Apparatus and Device Manufacturing Method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170041145A (ko) | 2017-04-14 |
| CN106560745A (zh) | 2017-04-12 |
| TW201714024A (zh) | 2017-04-16 |
| JP2017072678A (ja) | 2017-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |