TWI655511B - Exposure apparatus, exposure method, and method of manufacturing the same - Google Patents
Exposure apparatus, exposure method, and method of manufacturing the same Download PDFInfo
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- TWI655511B TWI655511B TW105130643A TW105130643A TWI655511B TW I655511 B TWI655511 B TW I655511B TW 105130643 A TW105130643 A TW 105130643A TW 105130643 A TW105130643 A TW 105130643A TW I655511 B TWI655511 B TW I655511B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
- G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
Abstract
一種用於在移動基板(P)和光罩(M)的同時執行基板(P)的掃描曝光的曝光設備,其具有被配置為以曝光光照明光罩(M)的照明光學系統(IL)、以及被配置為將光罩(M)的圖案投影到基板(O)上的投影光學系統(PO),曝光設備包括:被配置為以測量光照射標記的測量光源(13);被配置為經由投影光學系統所接收標記的投影圖像的光接收器(15);以及控制單元(51),其被配置為基於在光接收器上所接收的投影圖像來計算標記的位置資訊,且基於被計算出來的位置資訊來控制被配置為執行校正的校正單元(42),其中,標記被設置在被照明於光罩上的曝光光的光路徑的外部。 An exposure apparatus for performing scanning exposure of a substrate (P) while moving the substrate (P) and the reticle (M), having an illumination optical system (IL) configured to illuminate the reticle (M) with exposure light, and A projection optical system (PO) configured to project a pattern of a photomask (M) onto a substrate (O). The exposure apparatus includes: a measurement light source (13) configured to irradiate a mark with measurement light; A light receiver (15) for the projection image of the marker received by the optical system; and a control unit (51) configured to calculate position information of the marker based on the projection image received on the light receiver, and based on the The calculated position information controls a correction unit (42) configured to perform correction, wherein a marker is provided outside the light path of the exposure light illuminated on the photomask.
Description
本發明關於曝光設備、曝光方法和製造裝置的方法。 The present invention relates to an exposure apparatus, an exposure method, and a method of manufacturing an apparatus.
在用於製造半導體裝置等的微影過程中,使用經由投影光學系統將原件的圖案轉印到基板的曝光區域上的曝光設備。隨著裝置等變得越來越小,需要改善由曝光設備所轉印的圖案的線寬均勻性(line width uniformity)。投影光學系統的成像性能的變化會降低線寬均勻性。投影光學系統的成像性能的變化可能由於被包含在投影光學系統中的光學元件的振動而發生。日本專利公開第2010-283089號揭露了一種曝光設備,其藉由以感測器檢測包含投影光學系統的各零件的振動並基於所檢測的振動來使被包含在投影光學系統中的光學元件振動,來減少線寬的變化量。日本專利公開第2001-185478號揭露了一種曝光設備,其藉由測量被包含在投影光學系統中的 光學元件的姿勢變化並基於測量結果移動原件或基板,來校正由姿勢改變所造成的轉印位置的偏離。 In a lithography process for manufacturing a semiconductor device or the like, an exposure apparatus is used which transfers a pattern of an original onto an exposure area of a substrate via a projection optical system. As devices and the like become smaller, it is necessary to improve the line width uniformity of a pattern transferred by an exposure apparatus. Changes in the imaging performance of the projection optical system will reduce line width uniformity. A change in the imaging performance of the projection optical system may occur due to the vibration of an optical element included in the projection optical system. Japanese Patent Laid-Open No. 2010-283089 discloses an exposure apparatus that detects the vibration of each part including the projection optical system with a sensor and vibrates the optical element included in the projection optical system based on the detected vibration. To reduce the amount of change in line width. Japanese Patent Laid-Open No. 2001-185478 discloses an exposure apparatus which measures the The posture of the optical element is changed and the original or the substrate is moved based on the measurement result to correct the deviation of the transfer position caused by the posture change.
為了藉由以上的專利文件的曝光設備來改善線寬均勻性,必須增加被附接到被包含在設備中的光學元件的感測器的數量和類型,但它在成本等的問題方面是不現實的。此外,因為雖然任何給定的曝光設備不直接獲得被轉印到曝光區域上的圖案的線寬的變化量,但是它們藉由基於所檢測的振動量等的計算而間接地獲得它,可能會在計算過程中發生誤差。 In order to improve the line width uniformity by the exposure apparatus of the above patent document, it is necessary to increase the number and types of sensors attached to the optical elements contained in the apparatus, but it is not a problem in terms of cost and the like realistic. In addition, because although any given exposure equipment does not directly obtain the amount of change in the line width of the pattern transferred to the exposed area, they may obtain it indirectly through calculations based on the amount of vibration detected, etc. An error occurred during the calculation.
例如,本發明提供一種有利於改善線寬均勻性的曝光設備。 For example, the present invention provides an exposure apparatus that is advantageous for improving line width uniformity.
本發明是一種曝光設備,其用於在移動基板和光罩的同時執行基板的掃描曝光,曝光設備具有被配置為以曝光光照明光罩的照明光學系統、以及被配置為將光罩的圖案投影到基板上的投影光學系統,曝光設備包括:測量光源,被配置為以測量光照射標記;光接收器,被配置為經由投影光學系統接收標記的投影圖像;以及控制器,被配置為基於在光接收器上所接收的投影圖像來計算標記的位置資訊,並基於被計算出來的位置資訊來控制被配置為執行校正的校正單元,其中,標記被設置在被照明於光罩上的曝光光的光路徑的外部。 The present invention is an exposure apparatus for performing scanning exposure of a substrate while moving the substrate and a photomask, the exposure apparatus having an illumination optical system configured to illuminate the photomask with exposure light, and configured to project a pattern of the photomask onto The projection optical system on the substrate, the exposure apparatus includes: a measurement light source configured to irradiate the marker with the measurement light; a light receiver configured to receive a projection image of the marker via the projection optical system; and a controller configured to The projection image received on the light receiver calculates the position information of the marker, and controls a correction unit configured to perform the correction based on the calculated position information, wherein the marker is set on an exposure illuminated on the photomask Outside of the light path of light.
從例示性實施例參照所附圖式的以下描述, 本發明的進一步特徵將變得清楚明瞭。 With reference to the following description of the attached drawings from an exemplary embodiment, Further features of the invention will become apparent.
10‧‧‧測量光 10‧‧‧ measuring light
11‧‧‧構件 11‧‧‧ Components
12‧‧‧測量標記 12‧‧‧ measurement mark
13‧‧‧測量光源 13‧‧‧Measuring light source
14‧‧‧鏡子 14‧‧‧Mirror
15‧‧‧感測器(光接收器) 15‧‧‧Sensor (light receiver)
16‧‧‧鏡子 16‧‧‧Mirror
21‧‧‧開口 21‧‧‧ opening
23‧‧‧開口 23‧‧‧ opening
41‧‧‧平板玻璃 41‧‧‧ flat glass
42‧‧‧驅動器(校正單元) 42‧‧‧Driver (correction unit)
43‧‧‧驅動器 43‧‧‧Driver
51‧‧‧控制器(控制單元) 51‧‧‧controller (control unit)
200‧‧‧短虛線 200‧‧‧short dash
202‧‧‧照明區域 202‧‧‧lighting area
301‧‧‧區域 301‧‧‧area
401‧‧‧區域 401‧‧‧area
500‧‧‧短虛線 500‧‧‧short dash
510‧‧‧測量光 510‧‧‧Measurement light
511‧‧‧基台 511‧‧‧ abutment
512‧‧‧測量標記 512‧‧‧Measurement mark
513‧‧‧測量光源 513‧‧‧Measuring light source
514‧‧‧鏡子 514‧‧‧Mirror
515‧‧‧感測器 515‧‧‧Sensor
516‧‧‧鏡子 516‧‧‧Mirror
701‧‧‧測量標記 701‧‧‧Measurement mark
EE‧‧‧掃描曝光設備 EE‧‧‧Scanning exposure equipment
IL‧‧‧照明系統(照明光學系統) IL‧‧‧lighting system (lighting optical system)
M‧‧‧原件(光罩) M‧‧‧Original (Mask)
M1‧‧‧第一平面鏡 M1‧‧‧First Plane Mirror
M2‧‧‧第一凹面鏡 M2‧‧‧The first concave mirror
M3‧‧‧凸面鏡 M3‧‧‧ convex mirror
M4‧‧‧第二凹面鏡 M4‧‧‧Second concave mirror
M5‧‧‧第二平面鏡 M5‧‧‧Second Plane Mirror
MST‧‧‧原件保持器 MST‧‧‧Original holder
P‧‧‧基板 P‧‧‧ substrate
PO‧‧‧投影光學系統 PO‧‧‧ Projection Optical System
PST‧‧‧基板保持器 PST‧‧‧Board Holder
圖1是顯示根據第一實施例的掃描投影曝光設備的配置的示意圖。 FIG. 1 is a schematic diagram showing a configuration of a scanning projection exposure apparatus according to a first embodiment.
圖2是原件保持器的附近的鳥瞰圖。 FIG. 2 is a bird's-eye view of the vicinity of the original holder.
圖3是原件保持器的附近的截面圖。 FIG. 3 is a cross-sectional view near the original holder.
圖4是基板保持器的附近的視圖。 FIG. 4 is a view near the substrate holder.
圖5是基板保持器的附近的視圖。 FIG. 5 is a view near the substrate holder.
圖6是顯示根據第二實施例的掃描投影曝光設備的配置的示意圖。 FIG. 6 is a schematic diagram showing a configuration of a scanning projection exposure apparatus according to a second embodiment.
圖7是原件保持器的附近的鳥瞰圖。 FIG. 7 is a bird's-eye view of the vicinity of the original holder.
圖8是原件保持器的附近的截面圖。 FIG. 8 is a cross-sectional view of the vicinity of the original holder.
圖9是基板保持器的附近的視圖。 FIG. 9 is a view near the substrate holder.
在下文中,將參考圖式說明用於實現本發明的實施例。 Hereinafter, embodiments for implementing the present invention will be explained with reference to the drawings.
圖1是顯示根據第一實施例的掃描曝光設備EE的配置的示意圖。掃描曝光設備EE包括用於照明原件(光罩)M的照明系統IL、用於保持原件M的原件保持器MST、包含平板玻璃41的投影光學系統PO、用於保持 基板P的基板保持器PST、測量光源13、感測器(光接收器)15、驅動器(校正單元)42和控制器(控制單元)51。在圖式中,XY平面是沿原件M和基板P的表面的表面,Z軸垂直於XY平面,Y軸為在原件M和基板P的掃描方向上,且X軸在與Y軸正交的非掃描方向上。 FIG. 1 is a schematic diagram showing a configuration of a scanning exposure apparatus EE according to a first embodiment. The scanning exposure apparatus EE includes an illumination system IL for illuminating an original (mask) M, an original holder MST for holding the original M, a projection optical system PO including a flat glass 41, and a holding A substrate holder PST of the substrate P, a measurement light source 13, a sensor (light receiver) 15, a driver (correction unit) 42, and a controller (control unit) 51. In the figure, the XY plane is the surface along the surface of the original M and the substrate P, the Z axis is perpendicular to the XY plane, the Y axis is in the scanning direction of the original M and the substrate P, and the X axis is orthogonal to the Y axis Non-scanning direction.
照明系統IL包含光源(未示)和照明光學系統(未示),並以大致均勻的照度照明原件M上的照明區域。汞燈(mercury lamp)被,例如,使用來作為光源(未示),且汞燈的輸出波長的一部分,例如,i線、h線和g線,被使用來作為曝光光。照明光學系統(未示)收集從光源所發射的光,使得可在原件M上獲得期望的照明分佈。原件M由,例如,石英玻璃,所製成,且被形成為具有要被轉印到基板W上的圖案(例如,電路圖案)。原件保持器MST和基板保持器PST分別藉由驅動器(未示)而同步移動,且原件M的圖案經由投影光學系統PO被轉印到基板P的曝光區域上(掃描曝光)。 The illumination system IL includes a light source (not shown) and an illumination optical system (not shown), and illuminates an illumination area on the original M with a substantially uniform illuminance. A mercury lamp is used, for example, as a light source (not shown), and a part of the output wavelength of the mercury lamp, for example, i-line, h-line, and g-line is used as exposure light. The illumination optical system (not shown) collects light emitted from the light source, so that a desired illumination distribution can be obtained on the original M. The original M is made of, for example, quartz glass, and is formed to have a pattern (for example, a circuit pattern) to be transferred onto the substrate W. The original holder MST and the substrate holder PST are moved synchronously by a driver (not shown), respectively, and the pattern of the original M is transferred onto the exposure area of the substrate P via the projection optical system PO (scanning exposure).
投影光學系統PO包含第一平面鏡M1、第一凹面鏡M2、凸面鏡M3、第二凹面鏡M4、第二平面鏡M5和平板玻璃41。原件M與第一平面鏡M1之間的光路徑和第二平面鏡M5與基板P之間的光路徑平行。包含第一平面鏡M1的鏡面之平面與包含第二平面鏡M5的鏡面之平面之間的角度為90度。第一平面鏡M1與第二平面鏡M5較佳地被整合為一個平面鏡,且第一凹面鏡M2和第二凹面鏡M4較佳地亦被整合為一個凹面鏡。 The projection optical system PO includes a first plane mirror M1, a first concave mirror M2, a convex mirror M3, a second concave mirror M4, a second plane mirror M5, and a plate glass 41. The light path between the original M and the first plane mirror M1 and the light path between the second plane mirror M5 and the substrate P are parallel. The angle between the plane including the mirror surface of the first plane mirror M1 and the plane including the mirror surface of the second plane mirror M5 is 90 degrees. The first plane mirror M1 and the second plane mirror M5 are preferably integrated into a plane mirror, and the first concave mirror M2 and the second concave mirror M4 are also preferably integrated into a concave mirror.
測量光源13包含發光裝置(LED等)和照明光學系統,並在-Z方向上發射測量光10。感測器15包含像是CMOS感測器等(未示)的光檢測元件以及光接收光學系統(未示),並檢測(接收)測量光10(測量標記12的投影圖像)。控制器51基於感測器15的檢測信號來計算圖像的位置偏離,並控制驅動器42以移動平板玻璃41。細節於下文中說明。 The measurement light source 13 includes a light emitting device (LED, etc.) and an illumination optical system, and emits measurement light 10 in the -Z direction. The sensor 15 includes a light detection element such as a CMOS sensor (not shown) and a light receiving optical system (not shown), and detects (receives) the measurement light 10 (projected image of the measurement mark 12). The controller 51 calculates the positional deviation of the image based on the detection signal of the sensor 15 and controls the driver 42 to move the flat glass 41. Details are explained below.
圖2是從設備的上側(+Z方向)觀看之原件保持器MST及其附近的結構的視圖。原件保持器MST藉由支撐原件M的邊緣來保持原件M。照明系統IL對照明區域202進行照明。原件保持器MST在測量光10穿過的部分中包含在Y軸方向(掃描方向)上延伸的狹縫狀開口21。測量標記12被設置在開口21與照明系統IL之間。測量標記12被設置在被固定到曝光設備EE的本體的構件11上。測量標記12被以從測量光源13發射的測量光10照射。 FIG. 2 is a view of the original holder MST and the structures in the vicinity thereof viewed from the upper side (+ Z direction) of the device. The original holder MST holds the original M by supporting the edge of the original M. The lighting system IL illuminates the lighting area 202. The original holder MST includes a slit-like opening 21 extending in the Y-axis direction (scanning direction) in a portion through which the measurement light 10 passes. A measurement mark 12 is provided between the opening 21 and the lighting system IL. The measurement mark 12 is provided on a member 11 fixed to the body of the exposure apparatus EE. The measurement mark 12 is irradiated with the measurement light 10 emitted from the measurement light source 13.
圖3是沿圖2的短虛線200所截取的截面圖。從測量光源13所發射的測量光10藉由鏡子14而偏轉並穿過測量標記12和開口21。開口21在原件保持器MST中於Y軸方向上延伸,且在藉由於Y方向上掃描原件保持器MST的曝光期間,測量光10總是穿過原件保持器MST而不會被阻擋。在測量光10穿過的位置為透明的情況下,不需要開口21。鏡子14是平面鏡,且被放置在曝光光穿過之區域301的外部(光路徑的外部)以不干涉 曝光光。類似地,測量標記12(構件11)被放置在曝光光的光路徑的外部。測量光源13和鏡子14分別藉由保持機構(未示)而被固定到測量標記12被固定到的結構,亦即,構件11。 FIG. 3 is a cross-sectional view taken along a short dashed line 200 of FIG. 2. The measurement light 10 emitted from the measurement light source 13 is deflected by the mirror 14 and passes through the measurement mark 12 and the opening 21. The opening 21 extends in the Y-axis direction in the original holder MST, and during exposure by scanning the original holder MST in the Y direction, the measurement light 10 always passes through the original holder MST without being blocked. When the position through which the measurement light 10 passes is transparent, the opening 21 is not necessary. The mirror 14 is a flat mirror, and is placed outside the area 301 through which the exposure light passes (the outside of the light path) so as not to interfere Exposure light. Similarly, the measurement mark 12 (member 11) is placed outside the light path of the exposure light. The measurement light source 13 and the mirror 14 are respectively fixed to a structure to which the measurement mark 12 is fixed by a holding mechanism (not shown), that is, the member 11.
圖4是基板保持器PST及其附近的結構的視圖。從測量光源13發射並且穿過開口21、測量標記12和投影光學系統PO的測量光10藉由鏡子16而被偏轉並入射到感測器15。感測器15和測量標記12的檢測表面被佈置在光學共軛的位置處,且測量標記12的圖像經由投影光學系統PO而被形成在感測器15上。鏡子16是平面鏡,且被放置在曝光光於曝光期間穿過的區域401的外部。感測器15和鏡子16分別藉由保持機構(未示)被固定到曝光設備EE的本體。由於投影光學系統PO的倍率為-1,原件M的圖像在穿過投影光學系統PO之後在X方向上被顛倒。且因此,根據本實施例的測量光10在穿過投影光學系統PO之後經由相對於曝光光的+X側在-Z方向上前進。 FIG. 4 is a view of a substrate holder PST and a structure in the vicinity thereof. The measurement light 10 emitted from the measurement light source 13 and passed through the opening 21, the measurement mark 12, and the projection optical system PO is deflected by the mirror 16 and is incident on the sensor 15. The detection surfaces of the sensor 15 and the measurement mark 12 are arranged at positions of optical conjugation, and an image of the measurement mark 12 is formed on the sensor 15 via the projection optical system PO. The mirror 16 is a plane mirror and is placed outside the area 401 through which the exposure light passes during the exposure. The sensor 15 and the mirror 16 are respectively fixed to the body of the exposure apparatus EE by a holding mechanism (not shown). Since the magnification of the projection optical system PO is -1, the image of the original M is inverted in the X direction after passing through the projection optical system PO. And therefore, the measurement light 10 according to the present embodiment advances in the -Z direction via the + X side with respect to the exposure light after passing through the projection optical system PO.
控制器51基於測量標記12的投影圖像來計算測量標記12的位置資訊,並藉由比較預定位置資訊(基準位置)之間的計算結果而獲得偏差(差值)。預定位置資訊是感測器15被固定到的位置的坐標等。控制器51向驅動器42發送實施控制的控制信號,使得偏差減少。驅動器42基於控制信號而改變對於平板玻璃的XY平面的角度(向Z軸方向傾斜)。因此,測量光10的光 路徑被改變,且藉由感測器15所檢測的測量標記12的圖像的位置被校正。 The controller 51 calculates position information of the measurement mark 12 based on the projection image of the measurement mark 12 and obtains a deviation (difference value) by comparing calculation results between predetermined position information (reference position). The predetermined position information is coordinates and the like of a position to which the sensor 15 is fixed. The controller 51 sends a control signal for performing control to the driver 42 so that the deviation is reduced. The driver 42 changes the angle (inclined in the Z-axis direction) with respect to the XY plane of the plate glass based on the control signal. Therefore, the light of the measuring light 10 The path is changed, and the position of the image of the measurement mark 12 detected by the sensor 15 is corrected.
以下說明用於在不使用以上的基準位置的情況下檢測測量標記12的圖像的位置變化量之方法。圖5顯示進一步具有被佈置在鏡子16與感測器15之間的測量標記701的設備的配置。測量標記701和測量標記12被佈置在光學共軛的位置處。感測器15可藉由檢測測量標記12的圖像與測量標記701之間的相對位置關係來測量光學圖像位置的偏差。在此情況下,感測器15、鏡子16和測量標記701較佳地被固定到相同的結構(曝光設備EE的本體等)。 A method for detecting a position change amount of the image of the measurement mark 12 without using the above reference position will be described below. FIG. 5 shows a configuration of a device further having a measurement mark 701 arranged between the mirror 16 and the sensor 15. The measurement marks 701 and the measurement marks 12 are arranged at positions of optical conjugation. The sensor 15 can measure the deviation of the position of the optical image by detecting the relative positional relationship between the image of the measurement mark 12 and the measurement mark 701. In this case, the sensor 15, the mirror 16, and the measurement mark 701 are preferably fixed to the same structure (the body of the exposure apparatus EE, etc.).
由於測量標記12的圖像和原件M(圖案)的圖像經由投影光學系統PO而被形成,藉由被包含在投影光學系統PO中的光學元件的位置偏差所導致的測量標記12的圖像的位置偏差和原件M的圖像的位置偏差為相同的。因此,可藉由校正測量標記12的位置偏差來校正基板P上的原件M的位置偏差。由於測量光10在原件保持器MST被掃描時持續地入射到感測器15,掃描曝光期間的位置偏差的波動(光學圖像的振動)可被實時校正。 Since the image of the measurement mark 12 and the image of the original M (pattern) are formed via the projection optical system PO, the image of the measurement mark 12 is caused by the positional deviation of the optical element included in the projection optical system PO. The position deviation is the same as the position deviation of the image of the original M. Therefore, the positional deviation of the original M on the substrate P can be corrected by correcting the positional deviation of the measurement mark 12. Since the measurement light 10 is continuously incident on the sensor 15 while the original holder MST is being scanned, fluctuations in positional deviation (vibration of the optical image) during scanning exposure can be corrected in real time.
除了傾斜平板玻璃41以外,或者作為其替代,可藉由控制基板保持器PST和/或原件保持器MST的位置來校正位置偏差的波動。與檢測測量標記12有關的各元件(構件11、感測器15等)如同上面所揭露的一般被整合,以使得各元件中的位置偏差因素(振動等)相 同。因此,如果獲得此效果,本發明不限於以上的實施例。 In addition to or as an alternative to tilting the plate glass 41, fluctuations in positional deviation can be corrected by controlling the positions of the substrate holder PST and / or the original holder MST. The components (member 11, sensor 15, etc.) related to the detection measurement mark 12 are integrated as disclosed above, so that the positional deviation factors (vibrations, etc.) in each component are related with. Therefore, if this effect is obtained, the present invention is not limited to the above embodiments.
如上面所揭露,根據本實施例,可以提供有利於改善線寬均勻性的曝光設備。 As disclosed above, according to this embodiment, it is possible to provide an exposure apparatus that is advantageous for improving the uniformity of the line width.
在第一實施例中,測量標記在照明系統IL與原件M之間僅被設置在一個點處。第二實施例的特徵為在複數個位置處設置測量標記。圖6是顯示根據第二實施例的掃描投影曝光設備EE的配置的示意圖。第一實施例與本實施例之間的差別在於,本實施例包括發射測量光510的測量光源513、檢測測量光源513的感測器515、以及驅動器43。 In the first embodiment, the measurement mark is set at only one point between the illumination system IL and the original M. The second embodiment is characterized in that measurement marks are provided at a plurality of positions. FIG. 6 is a schematic diagram showing a configuration of a scanning projection exposure apparatus EE according to a second embodiment. The difference between the first embodiment and this embodiment is that this embodiment includes a measurement light source 513 that emits measurement light 510, a sensor 515 that detects the measurement light source 513, and a driver 43.
圖7是根據本實施例之從設備的上側(+Z方向)觀看之原件保持器MST及其附近的結構的視圖。第一實施例與本實施例之間的差別在於,本實施例在原件保持器MST上具有與Y軸平行地延伸的狹縫狀開口23。開口23和開口21較佳地相對於包含光軸的YZ平面被對稱地設置。此外,設置在被固定到曝光設備EE的本體的基台511上的測量標記512被定位在開口23與照明系統IL之間。這些額外的元件由與第一實施例類似的保持機構(未示)固定。 FIG. 7 is a view of the original holder MST and its surrounding structures viewed from the upper side (+ Z direction) of the device according to the present embodiment. The difference between the first embodiment and this embodiment is that this embodiment has a slit-like opening 23 on the original holder MST that extends parallel to the Y axis. The openings 23 and 21 are preferably provided symmetrically with respect to the YZ plane including the optical axis. Further, a measurement mark 512 provided on a base 511 fixed to the body of the exposure apparatus EE is positioned between the opening 23 and the illumination system IL. These additional elements are fixed by a holding mechanism (not shown) similar to the first embodiment.
圖8是沿圖7的短虛線500所擷取的截面圖。第一實施例與本實施例之間的差別在於,本實施例具 有基台511、測量標記512、測量光源513、以及鏡子514。這些元件較佳地夾著原件M相對於YZ平面與構件11、測量標記12、測量光源13、以及鏡子14被對稱地設置。從測量光源513發射的測量光510與第一實施例的測量光類似地前進。這些額外的元件由與第一實施例中的保持機構類似的保持機構(未示)固定。 FIG. 8 is a cross-sectional view taken along a short dashed line 500 of FIG. 7. The difference between the first embodiment and this embodiment is that this embodiment has There are a base 511, a measurement mark 512, a measurement light source 513, and a mirror 514. These elements are preferably arranged symmetrically with respect to the YZ plane and the member 11, the measurement mark 12, the measurement light source 13, and the mirror 14 with the original M interposed therebetween. The measurement light 510 emitted from the measurement light source 513 proceeds similarly to the measurement light of the first embodiment. These additional elements are fixed by a holding mechanism (not shown) similar to the holding mechanism in the first embodiment.
圖9是基板保持器PST及其附近的結構的視圖。第一實施例與本實施例之間的差別在於,本實施例具有感測器515和鏡子516。這些元件較佳地相對於YZ平面與感測器15和鏡子16被對稱地設置。在以上的配置中,可藉由檢測兩個測量標記的位置偏差,來檢測測量標記的圖像的旋轉分量(rotation component)。測量標記的圖像的旋轉分量作為兩個測量位置的位置偏差的差異被檢測。 FIG. 9 is a view of a substrate holder PST and a structure in the vicinity thereof. The difference between the first embodiment and this embodiment is that this embodiment has a sensor 515 and a mirror 516. These elements are preferably arranged symmetrically with the sensor 15 and the mirror 16 with respect to the YZ plane. In the above configuration, the rotation component of the image of the measurement mark can be detected by detecting the positional deviation of the two measurement marks. The rotation component of the image of the measurement mark is detected as a difference in the positional deviation of the two measurement positions.
兩個測量位置中的位置偏差的差異(旋轉分量)無法藉由移動平板玻璃41來校正。控制器51藉由控制驅動器43以圍繞Z軸旋轉鏡子M1和鏡子M5來執行校正。如上所述,本實施例提供與第一實施例相同的效果。 The difference (rotational component) in the positional deviation between the two measurement positions cannot be corrected by moving the plate glass 41. The controller 51 performs correction by controlling the driver 43 to rotate the mirror M1 and the mirror M5 about the Z axis. As described above, this embodiment provides the same effects as the first embodiment.
根據本發明的實施例的物品製造方法在製造像是微裝置(例如,半導體裝置)等、或具有微結構的元件等的物品上為較佳的。物品製造方法可包括:使用上述的曝光設備在物體上形成潛像圖案(例如,曝光處理)的 步驟;以及對潛像圖案已經在前面的步驟中被形成於其上的物體進行顯影的步驟。此外,物品製造方法可包括其它的已知步驟(氧化、膜形成、氣體沉積、摻雜、平坦化、蝕刻、抗蝕劑剝離、切割、接合、封裝等)。相較於習知的裝置製造方法,本實施例的裝置製造方法在裝置的性能、質量、生產率和生產成本中的至少一個上具有優勢。 The article manufacturing method according to the embodiment of the present invention is preferable in manufacturing an article such as a micro device (for example, a semiconductor device) or the like or an element having a micro structure. An article manufacturing method may include: forming a latent image pattern (for example, exposure processing) on an object using the above-mentioned exposure equipment A step; and a step of developing an object on which the latent image pattern has been formed in the previous step. In addition, the article manufacturing method may include other known steps (oxidation, film formation, gas deposition, doping, planarization, etching, resist peeling, cutting, bonding, packaging, etc.). Compared with the conventional device manufacturing method, the device manufacturing method of this embodiment has advantages in at least one of performance, quality, productivity, and production cost of the device.
雖然已參照例示性實施例描述了本發明,但應理解的是,本發明不限於所揭露的例示性實施例。以下申請專利範圍的範疇應被賦予最寬廣的解釋,以使其包含所有這樣的修改以及相等的結構和功能。 Although the invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The following patent application scope should be given the broadest interpretation so that it encompasses all such modifications as well as equivalent structures and functions.
本申請案要求在2015年10月6日提交的日本專利第2015-198420號申請案的權益,其全文在此藉由引用被併入。 This application claims the benefit of Japanese Patent No. 2015-198420 filed on October 6, 2015, the entirety of which is incorporated herein by reference.
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