JP2007115740A - Aligner and process for fabricating device, and observation equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner which can perform alignment of a substrate and a pattern image efficiently and precisely even when immersion method is applied. <P>SOLUTION: The aligner EX comprises a first detection system ALG which detects a mark AM for aligning a substrate P and a pattern image, an analyzer 6 for analyzing the detection results of the first detection system ALG in order to specify a first portion of the mark AM wetted with liquid LQ, and a controller 7 performing alignment of the substrate P and the pattern image using the detection results of the first detection system ALG after performing a predetermined processing depending on the results of analysis from the analyzer 6. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an exposure apparatus that exposes a substrate through a liquid, a device manufacturing method, and an observation apparatus.

In an exposure apparatus used in a photolithography process, an immersion apparatus that exposes a substrate by filling the optical path of exposure light with a liquid and projecting a pattern image onto the substrate through the liquid as disclosed in the following patent document A mold exposure apparatus has been devised.
International Publication No. 99/49504 Pamphlet

  In an exposure apparatus, alignment of a substrate and a pattern image may be performed using alignment marks, but alignment of the substrate and pattern image can be performed efficiently and accurately even when an immersion method is applied. It is required to do.

  The present invention has been made in view of such circumstances, and an exposure apparatus capable of efficiently and accurately aligning a substrate and a pattern image even when an immersion method is applied, and the exposure thereof It is an object of the present invention to provide a device manufacturing method using an apparatus and an observation apparatus.

  In order to solve the above-described problems, the present invention employs the following configurations corresponding to the respective drawings shown in the embodiments. However, the reference numerals with parentheses attached to each element are merely examples of the element and do not limit each element.

  According to the first aspect of the present invention, in the exposure apparatus that exposes the substrate (P) by projecting the pattern image onto the substrate (P) through the liquid (LQ), the measurement result is the substrate (P). A first detection system (ALG) for detecting marks (AM, FM1) used for alignment with the pattern image, and a first portion (PA1) wetted by liquid (LQ) among the marks (AM, FM1) The analysis device (6) for analyzing the detection result of the first detection system (ALG) in order to identify the first detection system (ALG), and after performing predetermined processing according to the analysis result of the analysis device (6), An exposure apparatus (EX) provided with a control device (7) for aligning the substrate (P) and the pattern image using the detection result of) is provided.

  According to the first aspect of the present invention, even when the liquid immersion method is applied, alignment between the substrate and the pattern image can be performed efficiently and accurately.

  According to the second aspect of the present invention, a device manufacturing method using the exposure apparatus (EX) of the above aspect is provided.

  According to the second aspect of the present invention, a device can be manufactured using an exposure apparatus that can efficiently and accurately align the substrate and the pattern image.

  According to a third aspect of the present invention, there is provided an observation apparatus including an observation system for observing an observation region formed on a substrate (P) through a liquid (LQ). Detection means for detecting a positioning pattern formed on the substrate (P) without passing through the liquid (LQ) in order to position the observation region in the observation field of the observation system, and the liquid (LQ) among the patterns The analysis device (6) for analyzing the detection result of the detection means in order to identify the first part (PA1) that is wet, and the detection after performing a predetermined process according to the analysis result of the analysis device (6) There is provided an observation device having a control device (7) for performing relative alignment between the substrate (P) and the observation visual field using the detection result of the means.

  According to the third aspect of the present invention, positioning accuracy in the observation apparatus can be improved.

  According to the present invention, alignment between the substrate and the pattern image can be performed efficiently and accurately, and the substrate can be exposed with high accuracy.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto.

  FIG. 1 is a schematic block diagram that shows an exposure apparatus EX according to the present embodiment. In FIG. 1, an exposure apparatus EX has a mask stage 3 that can move while holding a mask M, and a substrate holder 4H that holds a substrate P, and a substrate stage that can move while holding the substrate P in the substrate holder 4H. 4 and a measurement stage 5 mounted with a measuring instrument for measuring exposure processing and movable independently of the substrate stage 4, a laser interference system 6 for measuring position information of each stage, and a mask stage 3. The illumination system IL for illuminating the mask M being exposed with the exposure light EL, the projection optical system PL for projecting the pattern image of the mask M illuminated with the exposure light EL onto the substrate P, and the overall operation of the exposure apparatus EX are controlled. And a control device 7 for performing the operation. The control device 7 is connected to a storage device 8 that stores various types of information related to exposure processing. Here, the substrate includes a substrate in which a photosensitive material (photoresist) is coated on a base material such as a semiconductor wafer, and the mask includes a reticle on which a device pattern to be reduced and projected on the substrate is formed. In this embodiment, a transmissive mask is used as a mask, but a reflective mask may be used.

  In the present embodiment, as the exposure apparatus EX, a scanning exposure apparatus (so-called scanning) that exposes the substrate P by projecting a pattern image of the mask M onto the substrate P while moving the mask M and the substrate P synchronously in a predetermined scanning direction. A case where a stepper) is used will be described as an example. In the following description, the synchronous movement direction (scanning direction) of the mask M and the substrate P in the horizontal plane is the Y-axis direction, the direction orthogonal to the Y-axis direction in the horizontal plane is the X-axis direction (non-scanning direction), the X-axis, and A direction perpendicular to the Y-axis direction and parallel to the optical axis AX of the projection optical system PL is taken as a Z-axis direction. Further, the rotation (inclination) directions around the X axis, Y axis, and Z axis are the θX, θY, and θZ directions, respectively.

  The exposure apparatus EX of the present embodiment is an immersion type exposure apparatus to which an immersion method is applied, and among the plurality of optical elements of the projection optical system PL, the final optical element FL closest to the image plane of the projection optical system PL. An immersion system 1 is provided that fills the optical path K of the exposure light EL between the substrate P and the substrate P with the liquid LQ. In the present embodiment, water (pure water) is used as the liquid LQ. The exposure apparatus EX irradiates the substrate P with the exposure light EL that has passed through the mask M via the projection optical system PL and the liquid LQ filled in the optical path K of the exposure light EL, thereby forming a pattern image of the mask M. Projecting onto the substrate P exposes the substrate P.

  The immersion system 1 includes a nozzle member 70 having a supply port 12 for supplying the liquid LQ to the optical path K of the exposure light EL and a recovery port 22 for recovering the liquid LQ. The nozzle member 70 is provided in an annular shape so as to surround the optical path K of the exposure light EL, and the supply port 12 is provided on the inner surface of the nozzle member 70 facing the optical path K of the exposure light EL, and the recovery port 22. Is provided on the lower surface 70A of the nozzle member 70 facing the surface Ps of the substrate P. The control device 7 controls the liquid immersion system 1 to perform the liquid supply operation using the supply port 12 and the liquid recovery operation using the recovery port 22 in parallel, so that the final optical element of the projection optical system PL is performed. A liquid immersion region LR is formed on the substrate P so that the optical path K of the exposure light EL between the lower surface FA of the FL and the surface Pa of the substrate P is filled with the liquid LQ. The lower surface FA of the final optical element FL and the lower surface 70A of the nozzle member 70 hold the liquid LQ with the surface Ps of the substrate P in order to form the liquid LQ immersion region LR on the substrate P. The exposure apparatus EX of the present embodiment employs a local liquid immersion method in which the liquid immersion area LR of the liquid LQ is locally formed in a partial area on the substrate P. The liquid immersion area LR is formed so as to cover the projection area AR of the projection optical system PL.

The illumination system IL illuminates a predetermined illumination area IA on the mask M with exposure light EL having a uniform illumination distribution. As the exposure light EL emitted from the illumination system IL, for example, far ultraviolet light (DUV light) such as bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, , Vacuum ultraviolet light (VUV light) such as ArF excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm) is used. In this embodiment, ArF excimer laser light is used.

  The mask stage 3 is movable in the X-axis, Y-axis, and θZ directions while holding the mask M by driving the mask stage driving device 3D. The position information of the mask stage 3 (and hence the mask M) is measured by the laser interferometer 6M of the laser interference system 6. The laser interferometer 6M measures positional information of the mask stage 3 in cooperation with the reflecting surface 3K of the movable mirror provided on the mask stage 3. The control device 7 drives the mask stage driving device 3D based on the measurement result of the laser interference system 6, and controls the position of the mask M held on the mask stage 3.

  The projection optical system PL projects the pattern image of the mask M onto the substrate P at a predetermined projection magnification, and has a plurality of optical elements, and these optical elements are held by a lens barrel PK. The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, 1/8 or the like. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. In the projection optical system PL of the present embodiment, the optical path K on the image plane side of the final optical element FL is filled with the liquid LQ. However, as disclosed in International Publication No. 2004/019128, the final optical system PL It is also possible to employ a projection optical system in which the optical path on the object plane side of the element FL is filled with liquid.

  The substrate stage 4 has a substrate holder 4H that holds the substrate P. The substrate stage 4 is driven by the substrate stage driving device 4D, and the substrate stage 4 is held on the base member BP with the X-axis, Y-axis on the base member BP. It is movable in the direction of 6 degrees of freedom in the axis, Z axis, θX, θY, and θZ directions. The substrate holder 4H is disposed in a recess 4R provided on the substrate stage 4, and the upper surface 4F around the recess 4R is substantially the same height (level) as the surface Pa of the substrate P held by the substrate holder 4H. ) Is almost flat. The position information of the substrate stage 4 (and consequently the substrate P) is measured by the laser interferometer 6P of the laser interference system 6. The laser interferometer 6 </ b> P measures positional information of the substrate stage 4 in cooperation with the reflecting surface 4 </ b> K of the movable mirror provided on the side surface of the substrate stage 4. The control device 7 drives the substrate stage driving device 4D based on the measurement result of the laser interference system 6 and the detection result of the focus / leveling detection system (not shown) that detects the surface position information of the substrate P, so that the substrate stage 4 The position of the held substrate P is controlled.

  The measurement stage 5 has six degrees of freedom in the X axis, Y axis, Z axis, θX, θY, and θZ directions on the base member BP in a state where a measurement instrument is mounted by driving the measurement stage driving device 5D. Can be moved to. The upper surface 5F of the measurement stage 5 is a substantially flat surface. Position information of the measurement stage 5 is measured by the laser interferometer 6P of the laser interference system 6. The laser interferometer 6P measures the position information of the measurement stage 5 in cooperation with the reflecting surface 5K of the movable mirror provided on the side surface of the measurement stage 5. The control device 7 drives the measurement stage driving device 5D based on the measurement result of the laser interference system 6, and controls the position of the measurement stage 5. An exposure apparatus provided with a substrate stage 4 for holding the substrate P and a measurement stage 5 on which a measuring instrument is mounted is disclosed in, for example, Japanese Patent Application Laid-Open Nos. 11-135400 and 2000-164504. Yes.

  Further, the exposure apparatus EX includes a first detection system ALG that detects a mark for aligning the substrate P and the pattern image of the mask M, and an analysis apparatus 6 that analyzes the detection result of the first detection system ALG. ing. The detection result of the first detection system ALG is output to at least one of the analysis device 6 and the control device 7. The analysis device 6 and the control device 7 are connected, and the analysis result of the analysis device 6 is output to the control device 7.

  The first detection system ALG has an alignment mark AM provided on the substrate P and a first reference mark FM1 provided on the measurement stage 5 in order to align the substrate P and the pattern image by the projection optical system PL. Is detected. The first detection system ALG is an off-axis alignment system and is provided near the tip of the projection optical system PL. In FIG. 1, the first detection system ALG is arranged on the + Y side of the projection optical system PL. In the first detection system (alignment system) ALG of the present embodiment, for example, as disclosed in Japanese Patent Laid-Open No. 4-65603, a broadband detection light beam that does not expose a photosensitive material on the substrate P is detected as a detection target mark (alignment). Mark AM, first reference mark FM1, etc.) and an image of the detection target mark formed on the light receiving surface by reflected light from the detection target mark and an index (on the index plate provided in the alignment system ALG) An FIA (Field Image Alignment) method is employed in which an image of an index mark (template) is captured using an image sensor (CCD or the like), and the position of the mark is measured by performing image processing on these captured signals. .

  Further, the exposure apparatus EX includes a second detection system RA that detects the second reference mark FM2 provided on the measurement stage 5 via the projection optical system PL. The second detection system RA detects the second reference mark FM2 on the measurement stage 5 via the projection optical system PL in order to align the substrate P and the pattern image by the projection optical system PL. The second detection system RA (RAa, RAb) is a TTR (Through The Reticle) type alignment system using light having an exposure wavelength, and is provided in the vicinity of the mask stage 3. In FIG. The second detection systems (alignment systems) RAa and RAb are arranged at a predetermined distance in the X-axis direction. The second detection systems (alignment systems) RAa and RAb are arranged above the mask stage 3, and the second detection systems RAa and RAb correspond to a pair of alignment marks on the mask M and the alignment marks. The conjugate image of the second fiducial mark FM2 provided on the measurement stage 5 through the projection optical system PL is simultaneously observed. In the second detection system (reticle alignment system) RA of the present embodiment, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-176468, the mark is irradiated with light and the image of the mark captured by a CCD camera or the like. A VRA (Visual Reticle Alignment) system is employed in which data is subjected to image processing to detect a mark position. The detection result of the second detection system RA is output to the control device 7.

  FIG. 2 is a schematic diagram showing an outline of a device manufacturing system including the exposure apparatus EX. The manufacturing system SYS manages an exposure apparatus EX that performs an exposure process on the substrate P, an inline pre-detection system ALG1 and an offline pre-detection system ALG2 that are used to acquire a reference signal (template) related to the alignment mark AM, and an exposure process. An exposure process management controller EC and a data processing device DA for analyzing various data output from the advance detection system and the like are provided, and these are managed by the in-factory production management host system MC. Each of the devices and apparatuses described above is provided in a factory, and is connected to each other via a communication apparatus COM including a network such as a communication line and a LAN. The prior detection systems ALG1 and ALG2 have substantially the same configuration as the first detection system ALG. The inline pre-detection system ALG1 is provided in a track TR such as a coater / developer apparatus, and can detect the alignment mark AM on the substrate P before being conveyed to the exposure apparatus EX.

  FIG. 3 is a schematic diagram for explaining an example of operations of the substrate stage 4 and the measurement stage 5. As shown in FIG. 3, the substrate stage 4 and the measurement stage 5 are movable on the image plane side of the projection optical system PL, and the control device 7 is within a predetermined area including a position directly below the projection optical system PL. Formed by the immersion system 1 by moving the substrate stage 4 and the measurement stage 5 together in the XY directions in a state where the upper surface 4F of the substrate stage 4 and the upper surface 5F of the measurement stage 5 are close to or in contact with each other. The immersion area LR can be moved between the upper surface 4F of the substrate stage 4 and the upper surface 5F of the measurement stage 5.

  FIG. 4 is a plan view of the substrate stage 4 and the measurement stage 5. As shown in FIG. 4, on the substrate P, a plurality of shot areas S1 to S21, which are exposure target areas, are set in a matrix, and a plurality of shot areas S1 to S21 correspond to each of the shot areas S1 to S21. An alignment mark AM is provided. The first detection system ALG detects the alignment mark AM on the substrate P without passing through the liquid LQ in the liquid immersion region LR. When exposing each of the shot areas S1 to S21 of the substrate P, the control device 7, as shown by an arrow y1 in FIG. 4, for example, the projection area AR of the projection optical system PL, the liquid immersion area LR covering the projection area AR, and the substrate The exposure light EL is irradiated onto the substrate P through the liquid LQ in the liquid immersion region LR while moving relative to P. The control device 7 controls the operation of the substrate stage 4 so that the projection area AR (exposure light EL) of the projection optical system PL moves along the arrow y1 with respect to the substrate P.

  At a predetermined position on the upper surface 5F of the measurement stage 5, a reference plate 50 on which a plurality of reference marks are formed is provided as a measuring instrument (measurement member). On the upper surface 50A of the reference plate 50, a first reference mark FM1 and a second reference mark FM2 are formed in a predetermined positional relationship. The first detection system ALG detects the first reference mark FM1 on the reference plate 50 without passing through the liquid LQ in the liquid immersion area LR, and the second detection system RA detects the second reference mark FM2 on the reference plate 50. Is detected through the projection optical system PL and the liquid LQ in the liquid immersion area LR. In the present embodiment, one first reference mark FM1 is provided, and six second reference marks FM2 are provided.

  FIG. 5 is a diagram illustrating an example of the first reference mark FM1 and the second reference mark FM2. As shown in FIG. 5A, the first reference mark FM1 includes an X mark FMx in which a plurality of line patterns whose longitudinal direction is the Y-axis direction are arranged in the X-axis direction, and a line pattern whose longitudinal direction is the X-axis direction. Are arranged in the Y-axis direction. As shown in FIG. 5B, the second fiducial mark FM2 is formed by forming a cross-shaped opening (slit) with respect to a light shielding region made of metal such as Cr (chromium). In the present embodiment, the alignment mark AM formed on the substrate P has a configuration substantially equivalent to the first reference mark FM1 as shown in FIG.

  FIG. 6 is a diagram illustrating the index marks TLy and TRy and the Y mark FMy of the alignment mark AM captured by the image sensor of the first detection system ALG. As shown in FIG. 6A, the index marks TLy and TRy and the Y mark FMy of the alignment mark AM are simultaneously imaged in the imaging area of the imaging device. The horizontal scanning line SL of the image sensor is defined in the Y-axis direction orthogonal to the line pattern of the index marks TLy and TRy. FIG. 6B is a diagram illustrating an example of the detection signal S obtained along the horizontal scanning line SL. A signal waveform as shown in FIG. 6B is obtained by photoelectrically detecting the Y mark FMy and the index marks TLy, TRy along the horizontal scanning line SL. The analysis device 6 uses, for example, a predetermined waveform along the horizontal scanning line SL on the light receiving surface of the image sensor of the signal waveform (peak value Km) obtained by photoelectrically detecting the Y mark FMy of the alignment mark AM. The position in the direction (Y-axis direction) and the center position Jy in the Y-axis direction of the Y mark FMy can be obtained. Similarly, the analysis device 6 uses a predetermined algorithm to detect the position of the signal waveform (peak value Kt) obtained by photoelectric detection of the index marks TLy and TRy in the Y-axis direction and the Y between the index marks TLY and TRy. The center position Cy in the axial direction can be obtained. Thereby, the analysis device 6 can obtain a deviation amount (deviation) Δy of the center position Jy of the Y mark FMy of the alignment mark AM with respect to the center position (detection reference position) Cy between the index marks TLy and TRy. Similarly, the analysis device 6 determines the center position of the X mark FMx of the alignment mark AM on the light receiving surface of the image sensor and the X axis between the index marks based on the detection result of the first detection system ALG. The center position of the direction can be obtained, and the deviation amount (deviation) Δx of the center position of the X mark FMx of the alignment mark AM with respect to the center position (detection reference position) between the index marks can be obtained. Further, the first detection system ALG can detect the first reference mark FM1 by the same operation as the detection operation of the alignment mark AM.

  Next, the basic operation of the exposure apparatus EX, particularly the operation for obtaining the positional relationship between the detection reference position of the first detection system ALG and the projection position of the pattern image will be described with reference to the flowchart of FIG.

  First, the control device 7 controls the liquid immersion system 1 with the final optical element FL facing at least one of the substrate stage 4 and the measurement stage 5 to fill the optical path K of the exposure light EL with the liquid LQ. . Then, the control device 7 moves the measurement stage 5 in the XY directions, and arranges the first reference mark FM1 on the measurement stage 5 in the detection area of the first detection system ALG. Then, the control device 7 measures the position information of the measurement stage 5 using the laser interference system 6, and uses the first detection system ALG to display the first reference mark FM1 on the measurement stage 5 and the liquid LQ. Detection is not performed (step SA1). Accordingly, the control device 7 can obtain the position information of the first reference mark FM1 within the coordinate system defined by the laser interference system 6. Further, the first detection system ALG has a detection reference position within a coordinate system defined by the laser interference system 6, and the control device 7 detects the detection reference position of the first detection system ALG and the first reference mark FM1. The positional relationship with

  Next, the control device 7 moves the measurement stage 5 in the XY directions, and places the second reference mark FM2 on the measurement stage 5 in the detection area of the second detection system RA. Then, the control device 7 measures the position information of the measurement stage 5 using the laser interference system 6, and uses the second detection system RA to project the second reference mark FM2 on the measurement stage 5 to the projection optical system. Detection is performed via PL and liquid LQ (step SA2). Specifically, the control device 7 fills the space between the projection optical system PL and the reference plate 50 provided with the second reference mark FM2 with the liquid LQ, and the second reference mark FM2 on the reference plate 50. And the alignment mark on the mask M corresponding to the second reference mark FM2 and the corresponding alignment mark on the mask M are detected. Thereby, the control device 7 can obtain the position information of the second reference mark FM2 within the coordinate system defined by the laser interference system 6. Further, since the pattern on the mask M and the alignment mark are formed in a predetermined positional relationship, the control device 7 can obtain the positional relationship between the projection position of the pattern image and the second reference mark FM2.

  The first reference mark FM1 and the second reference mark FM2 on the reference plate 50 are formed with a predetermined positional relationship, and the positional relationship between the first reference mark FM1 and the second reference mark FM2 is known. The control device 7 determines the positional relationship between the detection reference position of the first detection system ALG and the first reference mark FM1 obtained in step SA1, the projection position of the pattern image and the second reference mark FM2 obtained in step SA2. And the known reference position of the first detection system ALG in the coordinate system defined by the laser interference system 6 based on the known positional relation between the first reference mark FM1 and the second reference mark FM2. And the positional relationship (baseline information) between the projection position of the pattern image of the mask M can be derived (step SA3). The first reference mark FM1 may be detected by the first detection system ALG after the detection of the second reference mark FM2 by the second detection system RA, or the first reference mark FM1 by the first detection system ALG may be detected. The detection and the detection of the second reference mark FM2 by the second detection system RA may be performed simultaneously.

  After the measurement using the measurement stage 5 is completed, the control device 7 starts an alignment process for the substrate P on the substrate stage 4. The control device 7 moves the substrate stage 4 in the X and Y directions, and sequentially places a plurality of alignment marks AM provided in association with the shot areas S1 to S21 on the substrate P in the detection area of the first detection system ALG. Deploy. Then, the control device 7 measures the position information of the substrate stage 4 using the laser interference system 6, and uses the first detection system ALG to pass the plurality of alignment marks AM on the substrate P through the liquid LQ. Are detected sequentially (step SA4). Accordingly, the control device 7 can obtain the position information of the alignment mark AM on the substrate P within the coordinate system defined by the laser interference system 6. Further, the control device 7 can obtain the positional relationship between the detection reference position of the first detection system ALG and the alignment mark AM.

  Next, based on the position information of each alignment mark AM on the substrate P obtained in step SA4, the control device 7 has a plurality of shot regions S1 to S1 on the substrate P with respect to the detection reference position of the first detection system ALG. Each position information of S21 is obtained by calculation processing (step SA5). When the position information of each of the plurality of shot areas S1 to S21 on the substrate P is obtained by arithmetic processing, a so-called EGA (Enhanced Global Alignment) disclosed in, for example, Japanese Patent Laid-Open No. 61-44429 is used. ) Method. Thereby, the control device 7 detects the alignment mark AM on the substrate P by the first detection system ALG, and sets the position coordinates (array coordinates) of the plurality of shot areas S1 to S21 provided on the substrate P. Can be determined. Further, the control device 7 can know from the output of the laser interference system 6 where each of the shot areas S1 to S21 on the substrate P is located with respect to the detection reference position of the first detection system ALG. .

  The control device 7 determines the positional relationship (detection) between the detection reference position of the first detection system ALG and the shot areas S1 to S21 on the substrate P in the coordinate system defined by the laser interference system 6 obtained in step SA5. Information on the shot area with respect to the reference position) and the detection reference position of the first detection system ALG and the projection position of the pattern image of the mask M in the coordinate system defined by the laser interference system 6 obtained in step SA3. Based on the positional relationship, the relationship between the shot areas S1 to S21 on the substrate P and the pattern projection position of the mask M within the coordinate system defined by the laser interference system 6 is derived (step SA6).

  Then, the control device 7 determines the position of the substrate P on the substrate stage 4 based on the positional relationship between the shot areas S1 to S21 on the substrate P and the projection position of the pattern image of the mask M obtained in step SA6. The plurality of shot areas S1 to S21 on the substrate P are sequentially exposed (step SA7).

  As described with reference to FIG. 3, in the present embodiment, the control device 7 can move the liquid immersion area LR of the liquid LQ between the upper surface 4F of the substrate stage 4 and the upper surface 5F of the measurement stage 5. Yes, when performing measurement processing using the measurement stage 5 or exposure processing of the substrate P on the substrate stage 4, the liquid immersion region LR is formed on at least one of the measurement stage 5 and the substrate stage 4. In the present embodiment, when one of the substrate stage 4 and the measurement stage 5 is separated from the projection optical system PL, the other stage is arranged at a position facing the projection optical system PL, and the control device 7 Can continue to fill the optical path K of the exposure light EL on the light emission side of the final optical element FL with the liquid LQ using the liquid immersion system 1. Thus, since the last optical element FL and the liquid LQ are kept in contact, drying of the last optical element FL can be suppressed.

  Next, an algorithm for analyzing (image processing) the detection result of the first detection system ALG by the analysis device 6 will be described. In the following description, for simplicity, a plurality (three in this case) of line patterns LP1 to LP3 having the X-axis direction as the longitudinal direction are arranged in the Y-axis direction as shown in the schematic diagram of FIG. The Y mark FMy will be described as the alignment mark AM. Therefore, the detection signal S when the alignment mark AM in FIG. 8A is detected by the first detection system ALG has three detection signals S corresponding to the three line patterns LP1 to LP3 as shown in FIG. 8B. A signal waveform having a peak value Km (hereinafter appropriately referred to as a peak waveform) is obtained.

  In the present embodiment, the analysis device 6 analyzes the detection result when the first detection system ALG detects the alignment mark AM by pattern matching (template matching) using a correlation method. Specifically, the analysis device 6 obtains a correlation value between the reference signal T when the alignment mark AM in the ideal state is detected and the detection signal S when the alignment mark AM is detected by the first detection system ALG, The correlation value is compared with a predetermined value (allowable value) determined in advance, and the position of the alignment mark AM is obtained based on the comparison result.

  The storage device 8 stores information on a template in which a reference position is provided at a predetermined position as shown in FIG. 8C as a reference signal T when an alignment mark AM in an ideal state is detected. In the analysis device 6, this template is registered as the reference signal T. The reference signal (template) T shown in FIG. 8C is correlated with the detection signal S of the alignment mark AM. That is, the reference signal (template) T also has three peak waveforms so as to correspond to the detection signal S having three peak waveforms. The analysis device 6 obtains a correlation value between the template as the reference signal T and the detection signal S when the alignment mark AM is detected by the first detection system ALG.

  By the way, as described above, in order to sequentially detect the plurality of alignment marks AM on the substrate P using the first detection system ALG, the substrate P is moved in the XY direction with respect to the detection region of the first detection system ALG. At this time, the immersion region LR formed on the image plane side of the projection optical system PL may come into contact with the substrate P. When the liquid LQ in the immersion region LR contacts the substrate P, the alignment mark AM on the substrate P may get wet as shown in the schematic diagram of FIG. Since the first detection system ALG is optimized so that the alignment mark AM in a wet state can be satisfactorily detected, if the alignment mark AM is wet, for example, the detection accuracy deteriorates or the substrate is accompanied accordingly. The alignment accuracy between the P shot area and the projection position of the pattern image may deteriorate. Therefore, in the present embodiment, the control device 7 analyzes the detection result of the first detection system ALG using the analysis device 6 in order to identify the portion of the alignment mark AM that is wet with the liquid LQ. After performing a predetermined process according to the analysis result, the shot areas S1 to S21 on the substrate P and the pattern image are aligned using the detection result of the first detection system ALG. In the following description, a portion of the alignment mark AM that is wet with the liquid LQ is appropriately referred to as a first portion PA1, and a portion that is not wet with the liquid LQ is appropriately referred to as a second portion PA2.

  As described above, information related to the alignment mark AM in the ideal state, that is, not wetted with the liquid LQ, is stored in advance as the reference signal (template) T in the storage device 8. Based on the storage information of the storage device 8, that is, the reference signal (template) T having three peak waveforms as shown in FIG. 8C, and the detection result of the first detection system ALG. In the alignment mark AM, the first part PA1 wet with the liquid LQ is specified. Specifically, the analysis device 6 uses the reference signal T when the alignment mark AM is not wetted with the liquid LQ and the detection signal S when the alignment mark AM is detected by the first detection system ALG. The correlation value is obtained, the correlation value is compared with a predetermined value (allowable value), and the first portion PA1 wetted with the liquid LQ is specified out of the alignment mark AM based on the comparison result. . In the present embodiment, in order to specify the first portion PA1 of the alignment mark AM, first, the reference signal T and the detection signal S are aligned, and then the reference signal T and the first portion PA1 are specified. The degree of coincidence with the detection signal S (hereinafter referred to as coincidence degree) is obtained.

  For example, as shown in FIG. 10A, among the three line patterns LP1 to LP3, the line pattern LP1 present on the + Y side is wet (the first portion PA1 is present on the line pattern LP1). ) It is assumed that the detection signal S when the alignment mark AM is detected by the first detection system ALG has a signal waveform as shown in FIG. That is, in the detection signal S, peak waveforms corresponding to the line patterns LP2 and LP3 can be obtained satisfactorily, but peak waveforms corresponding to the line pattern LP1 cannot be obtained satisfactorily. When there is a reference signal T in such a positional relationship as shown in the schematic diagram of FIG. 11A with respect to such a detection signal S, a control device is used to align the detection signal S and the reference signal T. 7 is a substrate stage 4 that holds the substrate P with respect to the detection region of the first detection system ALG while moving relatively between the detection region of the first detection system ALG and the surface of the substrate P including the alignment mark AM, for example. The first correlation value is obtained by using the analysis device 6 while moving the sensor in the X and Y directions at a predetermined pitch, and the detection region of the first detection system ALG and the alignment mark AM are set so that the first correlation value is equal to or greater than the allowable value. The positional relationship of is determined. Thereby, the control apparatus 7 can align the reference signal T and the detection signal S as shown in the schematic diagram of FIG. Next, as shown in the schematic diagram of FIG. 11C, the analysis device 6 obtains the second correlation value using the reference signal T and the detection signal S, and based on the second correlation value, the reference signal T And the degree of coincidence between the detection signal S and the first part PA1 are specified. In the example shown in FIG. 11C, the correlation value between the detection signal S corresponding to the most + Y side line pattern LP1 and the reference signal T is low, so the most of the three line patterns LP1 to LP3 is on the + Y side. It can be determined that the first portion PA1 wet with the liquid LQ exists on the line pattern LP1.

  In order to obtain the first correlation value, when aligning the detection region (and thus the reference signal T) of the first detection system ALG with the alignment mark AM (and thus the detection signal S) on the substrate P, the control device 7 Using the position information of other marks that have been successfully detected, apart from the detection target marks, the detection area (reference signal T) of the first detection system ALG and the alignment mark AM (detection signal S) are roughly determined. After performing proper alignment, the substrate stage 4 holding the substrate P with respect to the detection region of the first detection system ALG is moved at a predetermined pitch in the XY direction to thereby detect the detection region (and thus the reference signal) of the first detection system ALG. T) and the alignment mark AM (and thus the detection signal S) on the substrate P can be efficiently aligned. Here, the alignment mark AM that has been normally detected by the first detection system ALG is the peak of the detection signal S corresponding to each of all the line patterns LP1 to LP3 among the three line patterns LP1 to LP3. This means that the waveform was obtained well. In the following description, the operation of performing rough alignment between the reference signal T and the detection signal S using the position information of other marks that have been normally detected is appropriately referred to as a check region narrowing operation. .

  For example, as shown in FIG. 12, when a plurality of alignment marks AM are provided on the substrate P, the detection signal S and the reference signal T of the first alignment mark AM1 among the plurality of alignment marks AM on the substrate P. Are aligned using the position information of the second alignment mark AM2 that has been normally detected by the first detection system ALG different from the first alignment mark AM1, and the reference signal T and the first alignment mark AM1. The detection signal of the alignment mark AM1 can be aligned. The positional relationship between the second alignment mark AM2 that has been normally detected by the first detection system ALG and the first alignment mark AM1 that may be wet with the liquid LQ is obtained in advance, for example, in terms of design values. Can do. Therefore, the position of the first alignment mark AM1 that may be wet with the liquid LQ is obtained from the second alignment mark AM2 that has been normally detected, and then the first correlation value is obtained as necessary. Thereafter, the second correlation value is obtained, and the position (reference position, center) of the first alignment mark AM1 that may be wetted with the liquid LQ is obtained by appropriately correcting the offset, scaling, rotation, orthogonality, etc. of XY. Position).

  Further, when the plurality of substrates P are sequentially exposed and the alignment marks AM are provided on each of the plurality of substrates P, the first of the plurality of substrates P on the first substrate P1 as shown in FIG. When the detection signal S of the third alignment mark AM3 and the reference signal T are aligned, detection by the first detection system ALG is normally performed in the second substrate P2 different from the first substrate P1, and the first Using the position information of the fourth alignment mark AM4 provided at the position corresponding to the position where the third alignment mark AM3 is provided on one substrate P1, the reference signal T and the third alignment mark AM3 The detection signal S can be aligned. In this case, it is desirable that the detection conditions for detecting the alignment mark AM3 on the first substrate P1 and the detection conditions for detecting the alignment mark AM4 on the second substrate P2 are the same.

  In this way, the alignment of the reference signal T and the detection signal S is performed by performing the narrowing operation of the check area of the detection target mark using the alignment mark that has been normally detected by the first detection system ALG. (Derivation of one correlation value) can be performed in a short time. It is also possible to combine the method described with reference to FIG. 12 and the method described with reference to FIG.

  Further, in the present embodiment, the analysis apparatus 6 has passed the alignment mark AM that has passed under the lower surface FA of the final optical element FL and the lower surface 70A of the nozzle member 70 before being arranged in the detection region of the first detection system ALG. Analysis of the alignment mark AM that may be wet with the liquid LQ is performed. For example, consider a case where fifth to seventh alignment marks AM5 to AM7 provided at each of a plurality of positions on the substrate P as shown in the schematic diagram of FIG. 14 are sequentially detected using the first detection system ALG. . As shown in FIG. 14A, the fifth detection mark AM5 is detected by the first detection ALG based on the size of the liquid immersion region LR, the first detection system ALG, and the positional relationship between the alignment marks AM5 to AM7, and the like. In this case, the sixth alignment mark AM6 does not come into contact with the liquid LQ in the liquid immersion area LR, but the seventh alignment mark AM7 has not been placed in the detection area of the first detection system ALG. It passes below the lower surface FA of the element FL and the lower surface 70A of the nozzle member 70 and contacts the liquid LQ in the liquid immersion region LR. Next, as shown in FIG. 14B, the control device 7 moves the substrate stage 4 and detects the sixth alignment mark AM6 in order to detect the sixth alignment mark AM6 by the first detection system ALG. Arranged in the detection area of the first detection system ALG. When the sixth alignment mark AM6 is arranged in the detection region of the first detection system ALG, the movement direction (movement locus) of the substrate stage 4 is such that the sixth alignment mark AM6 has the lower surface FA of the final optical element FL and the nozzle member. It is set to be disposed in the detection region of the first detection system ALG without passing below the lower surface 70A of the 70, that is, without contacting the liquid LQ of the liquid immersion region LR. Accordingly, the sixth alignment mark AM6 is a mark that is unlikely (or less) wet with the liquid LQ before being arranged in the detection region of the first detection system ALG. Next, as shown in FIG. 14C, the control device 7 moves the substrate stage 4 and detects the seventh alignment mark AM7 in order to detect the seventh alignment mark AM7 by the first detection system ALG. Arranged in the detection area of the first detection system ALG. The liquid LQ is not filled between the first detection system ALG and the seventh alignment mark AM7. However, as shown in FIG. 14A, the seventh alignment mark AM7 is detected by the first detection system ALG. The mark that has passed under the lower surface FA of the final optical element FL and the lower surface 70A of the nozzle member 70 before being disposed in the region, and is wetted with the liquid LQ before being disposed in the detection region of the first detection system ALG. It is a mark that may have been.

  In the present embodiment, the analysis device 6 is arranged in the lower surface FA of the final optical element FL and the nozzle member 70 before being arranged in the detection region of the first detection system ALG, such as the seventh alignment mark AM7 in FIG. The alignment mark AM that has passed below the lower surface 70A is analyzed. Thereby, since the analysis is not performed for the alignment mark AM which is not likely to be wet with the liquid LQ (the number is small), the work efficiency can be improved.

  In the above-described embodiment, the template T including three peak waveforms corresponding to the peak waveforms of the detection signals S of the three line patterns LP1 to LP3 as shown in FIG. 15A is used. B) to three types of templates T including two peak waveforms for specifying the first portion PA1, as shown in FIG. 15D, are prepared, the template T including these two peak waveforms, the detection signal S, and the like. The first portion PA1 may be specified based on the correlation value (second correlation value). Further, as shown in FIGS. 16B to 16D, three types of templates T including one peak waveform corresponding to the peak waveform of the detection signal S corresponding to the peak waveform of each of the line patterns LP1 to LP3 are provided. The first portion PA1 may be specified based on a correlation value (second correlation value) between each template T including the one peak waveform and the detection signal S.

  Further, a wet line mark portion may be specified using two or more of a template including three peak waveforms, a template including two peak waveforms, and a template including one peak waveform.

  In the present embodiment, when it is determined that the first portion PA1 wet with the liquid LQ is present in the alignment mark AM based on the analysis result of the analysis device 6, the control device 7 <Process 1> to <Process 4> are performed.

  <Process 1> The control device 7 uses the second part PA2 not wetted with the liquid LQ without using the first part PA1 wetted with the liquid LQ in the alignment mark AM, and the substrate P and the pattern image. Align. Using the waveform (peak waveform) obtained from the second part PA2, the control device 7 obtains position information of the alignment mark AM and aligns the shot area of the substrate P with the projection position of the pattern image. Further, when the position information of the alignment mark AM is obtained using the second portion PA2, the control device 7 determines whether or not the designated portion designated in advance is wet among the alignment marks AM. For example, as shown in the schematic diagram of FIG. 17, when the line pattern LP1 on the most + Y side among the three line patterns LP1 to LP3 is designated as the designated portion, the line pattern LP1 that is the designated portion is wet. When it is determined that the first portion PA1 is present on the line pattern LP1, the control device 7 is the second portion PA2 that is not wet with the liquid LQ and is a non-designated portion other than the designated portion. The position information of the alignment mark AM is obtained using the detection result of the first detection system ALG based on LP3. That is, when a predetermined portion of the alignment mark AM is designated in advance and it is determined that the designated portion is wet, the control device 7 detects based on a non-designated portion other than the designated portion of the first detection system ALG. Using the result, the position information of the alignment mark AM can be acquired, and the substrate P and the pattern image can be aligned. Here, a plurality of designated portions may be designated in units of one line mark, or may be designated in units of a plurality of line marks, and the position information of the alignment mark AM may be obtained using a detection result based on a line mark that is not wet. get.

  As shown in the schematic diagram of FIG. 18, among the three line patterns LP1 to LP3, the most + Y side line pattern LP1 and the most −Y side line pattern LP3 are designated as designated portions, and the center line pattern LP2 is When it is determined that the line pattern LP2 that is the non-designated portion is wet (the first portion PA1 exists on the line pattern LP2) in the case of the non-designated portion, the control device 7 detects the alignment mark AM (3 It is possible not to align the substrate P and the pattern image using the line patterns LP1 to LP3).

  <Process 2> The analysis device 6 analyzes the detection result of the first detection system ALG based on a predetermined analysis condition. The control device 7 uses the analysis device 6 to analyze the second part of the first detection system ALG. When analyzing the detection result based only on PA2, the detection result of the first detection system ALG is analyzed by changing the analysis condition according to the second part PA2. That is, when template matching is performed without adopting the signal waveform based on the first portion PA1 as data, measures such as changing a template to be used are appropriately performed.

  <Process 3> The control device 7 changes the detection condition by the first detection system ALG according to the analysis result of the analysis device 6, and then performs the detection operation by the first detection system ALG based on the changed detection condition. Try again. By changing detection conditions by the first detection system ALG, such as illumination conditions and focus conditions, for example, there is a possibility that a detection signal whose second correlation value is greater than or equal to an allowable value can be obtained. Therefore, the control device 7 changes the detection condition by the first detection system ALG according to the analysis result of the analysis device 6, and then performs the detection operation by the first detection system ALG again based on the changed detection condition. Execute.

  <Process 4> When there are a plurality of alignment marks AM having the first portion PA1 in which the wet state is in the allowable state, the alignment marks AM in which the wet state is in the allowable state are ranked, and the substrate P and the pattern image are aligned. Used for. For example, when there are a plurality of alignment marks AM having the first part PA1 on the substrate P, it is assumed that the position information of the alignment mark AM can be detected using the second part PA2 without using the first part PA1. . When there are a plurality of alignment marks AM having such a first portion PA1 on the substrate P, the wet state, that is, the second correlation value with the reference signal may be different for each alignment mark. In such a case, the plurality of alignment marks AM are used when aligning the substrate P and the pattern image in descending order of the second correlation value.

  Next, a flowchart of FIG. 19 shows a method for exposing the substrate P using the exposure apparatus EX having the above-described configuration, particularly a sequence for detecting the alignment mark AM on the substrate P using the first detection system ALG. The description will be given with reference.

  First, information about the alignment mark AM that is not wet with the liquid LQ is acquired by the prior detection system ALG1 (or ALG2) (step SB1). Prior to the exposure of the substrate P, the pre-detection system ALG1 detects a predetermined alignment mark AM on the substrate P without using the liquid LQ in order to acquire information on the reference signal (template) T. The prior detection system ALG1 detects the alignment mark AM under a plurality of detection conditions. Thereby, the information regarding the reference signal (template) T under a plurality of detection conditions is acquired. Information regarding the reference signal (template) T is stored in the storage device 8. Note that information regarding the alignment mark AM that is not wet with the liquid LQ (information regarding the reference signal T) may be acquired using the first detection system ALG.

  Next, as described in step SA4 in FIG. 7, the control device 7 sequentially moves the plurality of alignment marks AM on the substrate P using the first detection system ALG while moving the substrate stage 4 in the XY directions. It detects (step SB2). The alignment mark AM detected by the first detection system ALG includes a mark that may be wet with the liquid LQ and a mark that may not be wet. Here, since the movement of the substrate stage 4 with respect to the liquid immersion region LR is known in advance, the control device 7 does not have the possibility of getting wet with the liquid LQ (for example, the fifth and sixth alignment marks in FIG. 14). AM5, AM6) and each of the alignment marks AM that may be wet with the liquid LQ (for example, the seventh alignment mark AM7 in FIG. 14) can be identified.

  Next, the control device 7 uses the detection result of the alignment mark that has been normally detected by the first detection system ALG, and uses the alignment mark that may have been wetted by the liquid LQ (for example, the seventh alignment mark in FIG. 14). It is determined whether or not a check area narrowing operation for analyzing AM7) is performed (step SB3). If it is determined in step SB3 that the check area narrowing operation is performed, the check area narrowing operation is performed as described with reference to FIGS. 12 and 13 (step SB4). The control device 7 obtains the first correlation value while relatively moving the detection area of the first detection system ALG and the surface of the substrate P including the alignment mark AM that may be wet with the liquid LQ at a predetermined pitch. (Step SB5). Note that step SB5 is also executed when it is determined in step SB3 that the check region narrowing operation is not performed.

  The control device 7 determines the positional relationship between the detection region of the first detection system ALG and the alignment mark AM so that the first correlation value obtained in step SB5 is greater than or equal to the allowable value, and the reference signal T and the detection signal S Are aligned (step SB6). And the control apparatus 7 calculates | requires the 2nd correlation value of the reference signal T and the detection signal S using the analysis apparatus 6 (step SB7).

  Next, the analysis device 6 determines whether or not the first part PA1 wet with the liquid LQ is present on the detection target mark (step SB8). That is, the analysis device 6 determines whether or not the second correlation value is greater than or equal to a predetermined allowable value. In step SB8, when it is determined that the second correlation value is greater than or equal to the allowable value, that is, when it is determined that there is no first part PA1 or the wet state of the first part PA1 is an allowable state, a normal sequence is performed. The alignment mark AM is detected (step SB14). That is, the alignment mark AM is detected using signal waveforms (peak waveforms) based on the three line patterns LP1 to LP3, and position information of the alignment mark AM is obtained. If it is determined in step SB8 that the second correlation value is less than or equal to the allowable value, the control device 7 determines whether or not to select an alignment mark AM different from the detected alignment mark AM (step SB9). .

  If it is determined in step SB9 that another alignment mark AM is to be used, the control device 7 selects another alignment mark AM from the plurality of alignment marks AM on the substrate P (step SB11). Then, the control device 7 detects another selected alignment mark AM using the first detection system ALG (step SB2).

  If it is determined in step SB9 that another alignment mark AM is not used, the control device 7 determines whether or not to change the detection condition for detecting the alignment mark AM using the first detection system ALG ( Step SB10). When it is determined in step SB10 that the detection condition is to be changed, the control device 7 changes the detection condition by the first detection system ALG in accordance with the analysis result of the analysis device 6, and then, based on the changed detection condition. Then, the detection operation by the first detection system ALG is executed again (step SB12).

  If it is determined in step SB10 that the detection condition is not changed, the control device 7 does not use the first part PA1 wetted with the liquid LQ in the alignment mark AM, and does not wet the liquid LQ. Is used to detect the alignment mark AM. Specifically, the control device 7 determines whether or not a designated portion designated in advance in the alignment mark AM is wet (step SB13). When it is determined in step SB13 that the non-designated part other than the designated part is wet, the alignment operation using the alignment mark AM is not performed, for example, the substrate P is rejected (step SB15). Alternatively, another alignment mark AM is selected (step SB11), and the selected alignment mark AM is detected.

  When it is determined in step SB13 that the designated portion designated in advance in the alignment mark AM is wet, the control device 7 uses the detection result based on the non-designated portion other than the designated portion of the first detection system ALG. Then, the position information of the alignment mark AM is acquired (step SB16). At this time, the analysis device 6 analyzes the detection result of the first detection system ALG only for the non-designated portion (that is, the second portion PA2) not wetted with the liquid LQ in the alignment mark AM. When analyzing the detection result based only on the second portion PA2 (non-designated portion) of the first detection system ALG using the analysis device 6, the control device 7 changes the analysis conditions according to the second portion PA2. Then, the position information of the alignment mark AM is acquired (step SB16).

  As described above, by analyzing the detection result of the first detection system ALG, the first part PA1 wet with the liquid LQ in the alignment mark AM is specified, for example, the second part other than the first part PA1. The substrate P and the pattern image can be aligned using the portion PA2. As described above, even if the alignment mark AM may be wet, the alignment mark AM is detected by the first detection system ALG, and the detection result is analyzed. It can be checked whether or not it can be used for alignment of the image. And based on the result, alignment mark AM which has the 1st part PA1 can be used for position alignment, and position alignment can be performed efficiently and accurately. Further, the alignment mark AM after touching the liquid LQ in the liquid immersion area LR can be used for alignment between the substrate P and the pattern image. For example, the substrate P is positioned with respect to the detection area of the first detection system ALG. When detecting the plurality of alignment marks AM on the substrate P while moving the held substrate stage 4 in the X and Y directions, the degree of freedom of movement of the substrate stage 4 can be improved, and the liquid LQ in the immersion region LR can be improved. It is also possible to detect the alignment mark AM after the touch again.

  In the above-described embodiment, the correlation value between the template (reference signal) and the detection signal is derived using at least one correlation method among the following methods (1) to (6). The following methods (1) to (6) are applicable to a one-dimensional waveform signal and a two-dimensional image signal.

(1) Sum-of-squares correlation method: Equation (1) is used in the case of a one-dimensional waveform signal having N number of data, and (2) in the case of a two-dimensional image signal having N × M number of data. ) Formula is used. C _V0 is a correlation value, W is a weighting coefficient, and W = 1 when not weighted.

(2) Sum-of-squares correlation method: Equation (3) is used for a one-dimensional waveform signal, and equation (4) is used for a two-dimensional image signal.

(3) Covariance correlation method: Equation (5) is used for a one-dimensional waveform signal, and Equation (6) is used for a two-dimensional image signal.

(4) Edge correlation method: For a one-dimensional waveform signal, equation (7) is used, and for a two-dimensional image signal, equation (8) is used.

(5) Normalized correlation method: In the case of a one-dimensional waveform signal, equations (9) to (12) are used, and in the case of a two-dimensional image signal, equations (13) to (16) are used.

(6) Edge normalized correlation method: Equations (17) to (20) are used for a one-dimensional waveform signal, and equations (21) to (24) are used for a two-dimensional image signal. .

  In addition, although the liquid LQ of the above-mentioned embodiment is water, it may be a liquid other than water, and the liquid LQ having a refractive index of about 1.6 to 1.8 may be used. Good.

  The substrate P in each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus. (Synthetic quartz, silicon wafer) or the like is applied.

  Further, when the liquid wetting (water wetting) also occurs on the reference mark formed on the above-described reference plate 50, it can be dealt with by a method similar to the above-described countermeasure against the water wetting mark on the substrate. Good.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P Can be applied to a step-and-repeat type projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed while the substrate P is stationary and the substrate P is sequentially moved stepwise.

  Further, as the exposure apparatus EX, a reduced image of the first pattern is projected with the first pattern and the substrate P being substantially stationary (for example, a refraction type projection optical system that does not include a reflecting element at 1/8 reduction magnification). The present invention can also be applied to an exposure apparatus that performs batch exposure on the substrate P using the above. In this case, after that, with the second pattern and the substrate P substantially stationary, a reduced image of the second pattern is collectively exposed onto the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially transferred on the substrate P, and the substrate P is sequentially moved.

  The present invention also relates to a twin stage type exposure apparatus having a plurality of substrate stages as disclosed in JP-A-10-163099, JP-A-10-214783, JP-T 2000-505958, and the like. It can also be applied to.

  The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto the substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD) ) Or an exposure apparatus for manufacturing reticles or masks.

  The present invention can also be used as an inspection apparatus for observing and measuring a substrate using an immersion method and an alignment method for a measurement apparatus. For example, a device (observation device) that observes a pattern (observed region) formed on a substrate through a liquid such as cedar oil and measures the line width or inspects for the presence or absence of the defect. In the present invention, the present invention can be applied. That is, even in such an observation apparatus, before observing the pattern (observed region) on the substrate, the positioning mark or the positioning pattern formed on the substrate is measured to observe the pattern. It is common to obtain positioning information for relative alignment between the region and the observation field of the observation system. When obtaining the positioning information, if the positioning mark or pattern is detected without using the liquid, the mark is detected by the same method as in the above embodiment. By specifying the water-wetting part and thereafter performing the same processing as described above, the positioning (alignment accuracy) in the observation apparatus can be improved.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern / dimming pattern) is formed on a light-transmitting substrate is used. As disclosed in Japanese Patent No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed may be used.

  Further, as disclosed in International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line-and-space pattern on a substrate P by forming interference fringes on the substrate P. The present invention can also be applied.

  As described above, the exposure apparatus EX according to the present embodiment maintains various mechanical subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by assembling. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 20, a microdevice such as a semiconductor device includes a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate as a base material of the device. Manufacturing step 203, exposure processing step 204 for exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, device assembly step (including dicing process, bonding process, packaging process) 205, inspection step 206, etc. It is manufactured after.

It is a schematic block diagram which shows one Embodiment of exposure apparatus. It is a schematic diagram which shows the outline of the device manufacturing system containing exposure apparatus. It is a schematic diagram for demonstrating an example of operation | movement of a substrate stage and a measurement stage. It is the top view which looked at the substrate stage and measurement stage from the upper part. It is a figure which shows an example of a reference mark. It is a figure for demonstrating the index mark and alignment mark which were imaged by the image sensor of the 1st detection system. It is a flowchart for demonstrating the basic operation | movement of an exposure apparatus. It is a schematic diagram for demonstrating the relationship between an alignment mark, a detection signal, and a reference signal. It is a schematic diagram for demonstrating the state where the alignment mark is wet with the liquid. It is a figure for demonstrating an example of the detection signal based on the alignment mark wet with the liquid. It is the figure which showed typically the operation | movement which calculates | requires the correlation value of a reference signal and a detection signal. It is a figure for demonstrating the operation | movement which aligns the detection signal of an alignment mark, and a reference signal using the other alignment mark by which the detection was performed normally. It is a figure for demonstrating the operation | movement which aligns the detection signal of an alignment mark, and a reference signal using the other alignment mark by which the detection was performed normally. It is a schematic diagram for demonstrating the positional relationship of the some alignment mark on a board | substrate, and a liquid immersion area | region. It is a figure for demonstrating an example of a reference signal. It is a figure for demonstrating an example of a reference signal. It is a schematic diagram for demonstrating the state where the designated part is wet. It is a schematic diagram for demonstrating the state where the non-designated part is wet. It is a flowchart for demonstrating the sequence which detects the alignment mark on a board | substrate using a 1st detection system. It is a flowchart figure for demonstrating an example of the manufacturing process of a microdevice.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Immersion system, 4 ... Substrate stage, 4D ... Substrate stage drive device, 4F ... Upper surface, 5 ... Measurement stage, 5D ... Measurement stage drive device, 5F ... Upper surface, 6 ... Analysis device, 7 ... Control device, 8 ... Storage device, 70 ... Nozzle member, 70A ... Lower surface, ALG ... First detection system, AM ... Alignment mark, EX ... Exposure device, FA ... Lower surface, FL ... Final optical element, FM1 ... First reference mark, FM2 ... Second Reference mark, LP1 to LP3 ... line pattern, LQ ... liquid, LR ... immersion area, P ... substrate, Pa ... surface, PA1 ... first part, PA2 ... second part, PL ... projection optical system, RA ... second Detection system, S ... detection signal, T ... reference signal

Claims (18)

In an exposure apparatus that exposes the substrate by projecting a pattern image onto the substrate through a liquid,
A first detection system for detecting a mark whose measurement result is used for alignment between the substrate and the pattern image;
An analysis device for analyzing a detection result of the first detection system in order to identify a first portion of the mark that is wet with liquid;
An exposure apparatus comprising: a control device that aligns the substrate and the pattern image using a detection result of the first detection system after performing a predetermined process according to an analysis result of the analysis device. A second surface for holding liquid between the first surface to form a liquid immersion region on the first surface including the mark;
A drive device capable of moving the first surface including the mark with respect to the second surface and the first detection system;
The first detection system detects the mark on the first surface without passing through the liquid in the immersion area, and the analysis device is configured to detect the mark before being placed in the detection area of the first detection system. The exposure apparatus according to claim 1, wherein the mark that has passed below two surfaces is analyzed. The mark includes a plurality of line patterns provided side by side,
The exposure apparatus according to claim 1, wherein the first portion includes a part of the line pattern. A storage device that stores in advance information about the mark that is not wet with liquid;
The exposure apparatus according to any one of claims 1 to 3, wherein the analysis device specifies the first portion based on information stored in the storage device and a detection result of the first detection system.   The exposure according to any one of claims 1 to 4, wherein the control device determines whether to use the first portion for alignment between the substrate and the pattern image based on an analysis result of the analysis device. apparatus.   The said control apparatus aligns the said board | substrate and the said pattern image using the 2nd part which is not wet with the liquid, without using the said 1st part among the said marks. The exposure apparatus according to item. The analysis device analyzes the detection result of the first detection system based on a predetermined analysis condition,
The exposure according to claim 6, wherein the control device changes the analysis condition according to the second portion when analyzing the detection result based only on the second portion of the first detection system using the analysis device. apparatus. When the control device determines that a predesignated designated portion of the mark is wet, the substrate and the pattern are detected using a detection result based on a nondesignated portion other than the designated portion of the first detection system. Align with the image,
The exposure apparatus according to claim 1, wherein when the non-designated portion is determined to be wet, alignment between the substrate using the mark and the pattern image is not performed.   The control device changes the detection condition by the first detection system according to the analysis result of the analysis device, and then executes the detection operation by the first detection system again based on the changed detection condition. The exposure apparatus according to claim 1. The analysis device obtains a correlation value between a reference signal when the mark that is not wet with liquid is detected and a detection signal when the mark is detected by the first detection system,
The exposure apparatus according to claim 1, wherein the correlation value is compared with a predetermined value, and the first portion is specified based on the comparison result. The reference signal includes a template provided with a reference position at a predetermined position,
The correlation value includes a first correlation value when aligning the reference signal and the detection signal, and a second correlation value when specifying the first portion,
When aligning the reference signal and the detection signal, the first correlation value is obtained while relatively moving the detection area of the first detection system and the first surface including the mark, and the first correlation is obtained. After determining the positional relationship between the detection area of the first detection system and the mark so that the value is equal to or greater than an allowable value,
The exposure apparatus according to claim 10, wherein the second correlation value is obtained using the reference signal and the detection signal, and the first portion is specified based on the second correlation value. A plurality of the marks are provided on the substrate,
When the reference signal and the detection signal of the first mark among the plurality of marks on the substrate are aligned, the second mark that has been normally detected by the first detection system different from the first mark The exposure apparatus according to claim 10 or 11, wherein the position information is used to align the reference signal and the detection signal of the first mark. A plurality of substrates are sequentially exposed, and the mark is provided on each of the plurality of substrates.
When the reference signal and the detection signal of the third mark on the first substrate among the plurality of substrates are aligned, the detection by the first detection system is normal among the second substrates different from the first substrate. And the reference signal and the detection signal of the third mark using the position information of the fourth mark provided at a position corresponding to the position where the third mark is provided on the first substrate. The exposure apparatus according to claim 10 or 11, wherein the alignment is performed. A projection optical system that projects a pattern image on the substrate;
A stage movable on the image plane side of the projection optical system,
The exposure apparatus according to claim 1, wherein the first detection system detects a reference mark provided on the stage. A second detection system for detecting a reference mark provided on the stage via the projection optical system;
The control device uses the first detection system to detect the position information of the reference mark without passing through the liquid, and uses the second detection system to detect the position information of the reference mark from the projection optical system and the liquid. The exposure apparatus according to claim 14, wherein the positional relationship between the detection reference position of the first detection system and the projection position of the pattern image is obtained.   The control device is based on positional information of the alignment mark on the substrate detected using the first detection system and a positional relationship between the detection reference position of the first detection system and the projection position of the pattern image. The exposure apparatus according to claim 15, wherein the substrate and the pattern image are aligned to expose the substrate.   The device manufacturing method using the exposure apparatus as described in any one of Claims 1-16. An observation apparatus including an observation system for observing an observation region formed on a substrate through a liquid,
Detecting means for detecting a positioning pattern formed on the substrate without using the liquid in order to position an observation region on the substrate in an observation field of view of the observation system;
An analysis device for analyzing a detection result of the detection means in order to identify a first portion wetted with liquid in the pattern;
An observation device comprising: a control device that performs relative alignment between the substrate and the observation visual field using the detection result of the detection means after performing a predetermined process according to the analysis result of the analysis device; .

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