CN106558562A - A kind of high power load metal-oxide-semiconductor heat abstractor - Google Patents
A kind of high power load metal-oxide-semiconductor heat abstractor Download PDFInfo
- Publication number
- CN106558562A CN106558562A CN201611037470.0A CN201611037470A CN106558562A CN 106558562 A CN106558562 A CN 106558562A CN 201611037470 A CN201611037470 A CN 201611037470A CN 106558562 A CN106558562 A CN 106558562A
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- Prior art keywords
- substrate
- oxide
- metal
- heat
- radiator
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
- H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention discloses a kind of high power load metal-oxide-semiconductor heat abstractor, comprising：Radiator and a plurality of metal-oxide-semiconductors, the radiator includes first substrate, second substrate and a plurality of fastening gear pieces, the first substrate and the second substrate are respectively arranged at a plurality of relative two flank sides for fastening gear piece, and a plurality of metal-oxide-semiconductors are distributed on the first substrate and the second substrate；Wherein, the thickness for fastening gear piece is 0.5mm to 0.8mm, and space width is 2.5mm to 3.5mm, and a plurality of quantity for fastening gear piece are 26 to 32.Good heat dissipation effect of the present invention, heatsink weight are light, personal safety protection comprehensively, and allow higher running voltage in the confined space.
Description
Technical field
The invention belongs to electronic circuit technology field, and in particular to a kind of high power load metal-oxide-semiconductor heat abstractor.
Background technology
The metal-oxide-semiconductor quantity of high power load is more, and during work, caloric value is big, if can not radiate in time, metal-oxide-semiconductor temperature can be by
Edge up height, final to cause metal-oxide-semiconductor to be burnt because temperature is too high, so that whole device load cannot normal work.
Typical high power loads metal-oxide-semiconductor heat abstractor, and high-power MOS tube is arranged on circuit board, and circuit board is placed in scattered
On hot device, metal-oxide-semiconductor is contacted with radiator base plate surface, and when the circuit is operating, the heat that metal-oxide-semiconductor is distributed passes through fan by radiator
Distribute rapidly, if when circuit power is larger, the quantity of metal-oxide-semiconductor can be more, and the power of single metal-oxide-semiconductor is damaged
Consumption can be bigger, and according to this metal-oxide-semiconductor radiator structure, the length that can only increase radiator and circuit board to radiate to metal-oxide-semiconductor, so
The weight of the depth and radiator that can increase cabinet is done, while the effective rate of utilization of this radiator structure radiator is low, radiating effect
Fruit is not good.
The content of the invention
The purpose of the present invention is exactly to solve the deficiency that above-mentioned background technology is present, there is provided a kind of good heat dissipation effect, dissipated
The light high power load metal-oxide-semiconductor radiator structure of hot device small volume heatsink mass.
The technical solution used in the present invention is：A kind of high power load metal-oxide-semiconductor heat abstractor, including radiator and a plurality of
Metal-oxide-semiconductor, the radiator include first substrate, second substrate and a plurality of fastening gear pieces, the first substrate and the second substrate point
A plurality of relative two flank sides for fastening gear piece are not arranged at, and a plurality of metal-oxide-semiconductors are uniformly distributed and fit in this
On first substrate and the second substrate；Wherein, fasten gear piece thickness be 0.5mm to 0.8mm, space width be 2.5mm extremely
3.5mm, a plurality of quantity for fastening gear piece are 26 to 32.
Used as further alternative technical scheme, the radiator also includes insulating heat-conductive pad, and the insulating heat-conductive pad is arranged at
Between metal-oxide-semiconductor and first substrate, and/or the insulating heat-conductive pad is arranged between metal-oxide-semiconductor and second substrate.Insulating heat-conductive pad
Metal-oxide-semiconductor radiating rate can be further speeded up, radiating efficiency is improved.
Used as further alternative technical scheme, the heat abstractor also includes circuit board, and a plurality of fastening gear pieces have
Two relative basal planes and two relative end faces, flank side, basal plane and the end face are adjacent two-by-two, and the circuit board is arranged at
In at least one of flank side, basal plane and the end face, a plurality of metal-oxide-semiconductors are installed on the circuit board.
Used as further alternative technical scheme, the radiator also includes heat pipe, and a plurality of fastening gear pieces have relative
Two basal planes, two basal planes are adjacent with the two flanks side respectively, on two basal planes respectively to should heat pipe heat is set
Pipe patchhole, the heat pipe are fixed on a plurality of fastening gear pieces by the heat pipe patchhole.
Used as further alternative technical scheme, the heat pipe includes condensation end and evaporation ends, and the evaporation ends are arranged at the heat
Pipe inserts in the hole, and the condensation end exposes to the heat pipe patchhole.Heat is absorbed by evaporation ends, after heat pipe transmission, is passed through
Condensation end radiates.
As further alternative technical scheme, the heat pipe evaporation ends close to the first substrate and the second substrate, with plus
The radiating of fast a plurality of metal-oxide-semiconductors.
Used as further alternative technical scheme, a plurality of fastening gear pieces have relative two basal plane, two bases
Face is adjacent with the two flanks side respectively, and basal plane is provided with fire-proof insulation pad radiator both sides and is provided with fireproof insulating board.
Used as further alternative technical scheme, a plurality of fastening gear pieces have relative two basal plane and relative
Two end faces, flank side, basal plane and the end face are adjacent two-by-two, and the end face is provided with fan.
Used as further alternative technical scheme, two end faces are respectively equipped with the first fan and the second fan, and this first
Fan is close to one of the both ends of the surface, and second fan is adjacent to the wherein another of the both ends of the surface.
Used as further alternative technical scheme, a plurality of metal-oxide-semiconductors are uniformly distributed in the first substrate and second base
On plate.As radiating rate is fast, the distance between metal-oxide-semiconductor can be less, effectively reduces structure space.
The construction for heat radiating device of the present invention is simple, enhances radiating effect, improves space availability ratio and reduce radiating
The quality of device, and personal safety protection is comprehensive, allows higher running voltage in limited space.
Description of the drawings
Fig. 1 is the structural representation of one embodiment of heat abstractor of the present invention；
Fig. 2 is the structural decomposition diagram of one embodiment of heat abstractor of the present invention.
Fig. 3 is the fastening gear piece structural representation of one embodiment of heat abstractor of the present invention.
In figure：1- radiators；2-MOS is managed；3- circuit boards；4- fans；5- radiator base plates；6- fireproof insulating boards；7- is warm
Pipe；8- fastens gear piece；8a- flanks side；8b- basal planes；8c- end faces；9- insulating heat-conductive pads；10- heat abstractors；11- condensation ends；
12- evaporation ends
Specific embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings, is easy to be well understood to this
It is bright, but they do not constitute restriction to the present invention.
Refer to Fig. 1 and Fig. 2, Fig. 1 be the present invention one embodiment of heat abstractor structural representation；Fig. 2 is the present invention
One embodiment of heat abstractor structural decomposition diagram.The high power load metal-oxide-semiconductor heat abstractor 10 of the present embodiment is comprising scattered
Hot device 1 and a plurality of metal-oxide-semiconductors 2.Radiator 1 includes first substrate 5, second substrate 5 ' and a plurality of fastening gear pieces 8, first substrate
5 and second substrate 5 ' be respectively arranged at it is a plurality of fasten gear pieces 8 relative two flank side 8a, 8a ', as shown in Fig. 2 and
A plurality of metal-oxide-semiconductors 2 are distributed on first substrate 5 and second substrate 5 '；Wherein, the thickness for fastening gear piece 8 is 0.5mm to 0.8mm,
Space width is 2.5mm to 3.5mm, fastens the quantity preferably 26 to 32 of gear piece.The heat abstractor 10 of the present embodiment is answered
Several metal-oxide-semiconductors 2 are arranged near gear piece 8 is fastened, and the heat which produces can be conducted well by fastening gear piece 8, while
By the optimal design-aside for fastening 8 thickness of gear piece, space width and number so that the radiating effect of heat abstractor 10 is greatly improved.
In a specific embodiment, radiator 1 also includes insulating heat-conductive pad 9, and insulating heat-conductive pad 9 is arranged at metal-oxide-semiconductor 2 and the
Between one substrate 5, and/or insulating heat-conductive pad 9 is arranged between metal-oxide-semiconductor 2 and second substrate 5 '.Thus, insulating heat-conductive pad 9
The heat transfer of metal-oxide-semiconductor 2 can further be accelerated to fastening gear piece 8, and then promote the radiating of metal-oxide-semiconductor 2.
In a specific embodiment, heat abstractor 10 also includes circuit board 3, and a plurality of fastening gear pieces 8 have relative two
Individual basal plane 8b, 8b ' and two relative end face 8c, 8c ', flank side 8a, basal plane 8b and end face 8c are adjacent two-by-two, circuit board
3 are arranged at flank side 8a, 8a ', basal plane 8b, 8b ' and end face 8c, and at least one of 8c ', a plurality of metal-oxide-semiconductors 2 are installed
On the circuit board 3.Thus, in the size for not increasing radiator 1, only can install on the premise of spacing between change metal-oxide-semiconductor 2
More metal-oxide-semiconductors 2,1 space availability ratio of radiator are improved.
In a specific embodiment, radiator 1 includes heat pipe 7, and a plurality of fastening gear pieces 8 have two relative basal planes
8b, 8b ', two basal plane 8b, 8b ' respectively with two flank side 8a, 8a ' is adjacent, two basal plane 8b, corresponds to heat pipe 7 on 8b ' respectively
Heat pipe patchhole 13 is set, and heat pipe 7 is fixed on a plurality of fastening gear pieces 8 by heat pipe patchhole 13.Thus, metal-oxide-semiconductor 2 is distributed
Heat heat pipe 7 is conducted to by substrate 5, then heat pipe 7 conduct heat to fastening gear piece 8 on, further promote metal-oxide-semiconductor 2
Radiating.
In a specific embodiment, heat pipe 7 includes condensation end 11 and evaporation ends 12, and evaporation ends 12 are arranged at heat pipe patchhole
In 13, condensation end 11 exposes to heat pipe patchhole 13.Thus, heat of the heat pipe 7 by 12 absorptive substrate 5 of evaporation ends, Ke Yitong
Cross the radiating that condensation end 11 further promotes metal-oxide-semiconductor 2.
In a specific embodiment, the evaporation ends 12 of heat pipe 7 are close to first substrate 5 and second substrate 5 '.Thus, heat pipe 7
Evaporation ends 12 promote the radiating of substrate 5.
In a specific embodiment, a plurality of fastening gear pieces 8 have two basal plane 8b, 8b ', two relative basal plane 8b,
8b ' 8as adjacent with two flank sides respectively, 8a ', basal plane 8b, 8b ' are provided with fireproof insulating board 6.So, it is therefore prevented that because people touches
The danger touched radiator and get an electric shock, and higher running voltage is allowed in the confined space.
In a specific embodiment, a plurality of fastening gear pieces 8 have two relative basal plane 8b, 8b ' and relative two
Individual end face 8c, 8c ', flank side 8a, basal plane 8b and end face 8c are adjacent two-by-two, and end face 8c is provided with fan 4, further can promote
Enter the dissipation of heat
In a specific embodiment, two end face 8c, 8c ' are respectively equipped with the first fan 4 and the second fan 4 ', the first fan
4 are close to one of both ends of the surface 8c, 8c ', and the second fan 4 ' is adjacent to both ends of the surface 8c, and 8c's ' is wherein another.Specifically, in
In the present embodiment, the first fan 4 is in air intake vent, and adjacent end face 8c, the second fan 4 ' are close to end face 8c ' in air outlet.Enter
Keep at a certain distance away between first fan 4 in air port and radiator 1, reduce windage and noise；And the second fan of air outlet
4 ' held against heat sink 1, its air quantity all fasten gear piece 8 and heat pipe 7 by radiator 1, and air quantity is not lost completely.
In a specific embodiment, a plurality of metal-oxide-semiconductors 2 are uniformly distributed on first substrate 5 and the second substrate 5 '.Such as
This, as radiating rate is fast, the distance between metal-oxide-semiconductor 2 can be less, effectively reduces structure space.
In sum, construction for heat radiating device of the invention is simple, enhances radiating effect, improves space availability ratio and drop
The low quality of heat abstractor, and personal safety protection is comprehensive, allows higher running voltage in limited space.
The content not being described in detail in this specification belongs to prior art known to professional and technical personnel in the field.
Claims (10)
1. a kind of high power load metal-oxide-semiconductor heat abstractor, the heat abstractor are included：Radiator and a plurality of metal-oxide-semiconductors, its feature exist
In：
The radiator includes first substrate, second substrate and a plurality of fastening gear pieces, and the first substrate and the second substrate are distinguished
Be arranged at this it is a plurality of fasten gear pieces relative two flank sides, and a plurality of metal-oxide-semiconductors be distributed in the first substrate and
On the second substrate；
Wherein, the thickness for fastening gear piece is 0.5mm to 0.8mm, and space width is 2.5mm to 3.5mm, a plurality of fastening gear pieces
Quantity is 26 to 32.
2. radiator heat-dissipation device as claimed in claim 1, it is characterised in that the radiator also includes insulating heat-conductive pad, should
Insulating heat-conductive pad is arranged between metal-oxide-semiconductor and first substrate, and/or the insulating heat-conductive pad is arranged at metal-oxide-semiconductor and the second base
Between plate.
3. heat abstractor radiator as claimed in claim 1, it is characterised in that the heat abstractor also includes circuit board, this is multiple
Several fastening gear pieces have relative two basal plane and two relative end faces, and the flank side, basal plane and end face two are biphase
Neighbour, the circuit board be arranged at flank side, basal plane and the end face at least one on, a plurality of metal-oxide-semiconductors are installed on this
On circuit board.
4. heat abstractor radiator as claimed in claim 1, it is characterised in that the radiator also includes heat pipe, and this is a plurality of
Fasten gear piece and there is relative two basal plane, two basal planes are adjacent with the two flanks side respectively, on two basal planes respectively
To should heat pipe arrange heat pipe patchhole, the heat pipe by the heat pipe patchhole be fixed on this it is a plurality of fasten gear pieces on.
5. heat abstractor as claimed in claim 4, it is characterised in that the heat pipe includes condensation end and evaporation ends, the evaporation ends
It is arranged at the heat pipe to insert in the hole, the condensation end exposes to the heat pipe patchhole.
6. heat abstractor as claimed in claim 5, it is characterised in that the heat pipe evaporation ends close to the first substrate and this second
Substrate, to accelerate the radiating of a plurality of metal-oxide-semiconductors.
7. heat abstractor radiator as claimed in claim 1, it is characterised in that a plurality of fastening gear pieces have relative two
Individual basal plane, two basal planes are adjacent with the two flanks side respectively, and basal plane is provided with fireproof insulating board.
8. heat abstractor radiator as claimed in claim 1, it is characterised in that a plurality of fastening gear pieces have relative two
Individual basal plane and two relative end faces, flank side, basal plane and the end face are adjacent two-by-two, and the end face is provided with fan.
9. heat abstractor as claimed in claim 8, it is characterised in that two end faces are respectively equipped with the first fan and the second wind
Fan, first fan are close to one of the both ends of the surface, and second fan is adjacent to the wherein another of the both ends of the surface.
10. heat abstractor as claimed in claim 1, it is characterised in that a plurality of metal-oxide-semiconductors are uniformly distributed in the first substrate
And on the second substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037470.0A CN106558562A (en) | 2016-11-21 | 2016-11-21 | A kind of high power load metal-oxide-semiconductor heat abstractor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037470.0A CN106558562A (en) | 2016-11-21 | 2016-11-21 | A kind of high power load metal-oxide-semiconductor heat abstractor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106558562A true CN106558562A (en) | 2017-04-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611037470.0A Pending CN106558562A (en) | 2016-11-21 | 2016-11-21 | A kind of high power load metal-oxide-semiconductor heat abstractor |
Country Status (1)
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| CN (1) | CN106558562A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109413956A (en) * | 2018-11-29 | 2019-03-01 | 武汉精能电子技术有限公司 | Electronic load radiator |
| WO2019227393A1 (en) * | 2018-05-31 | 2019-12-05 | 深圳市大疆创新科技有限公司 | Heat dissipating system and photographic device |
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Application publication date: 20170405 |
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