CN106558324A - 具有不共形屏蔽的叠瓦式磁写入器 - Google Patents
具有不共形屏蔽的叠瓦式磁写入器 Download PDFInfo
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/10—Structure or manufacture of housings or shields for heads
- G11B5/11—Shielding of head against electric or magnetic fields
- G11B5/115—Shielding devices arranged between heads or windings
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
- G11B5/6011—Control of flying height
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/3116—Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
- G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
- G11B5/3146—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding magnetic layers
- G11B5/315—Shield layers on both sides of the main pole, e.g. in perpendicular magnetic heads
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/488—Disposition of heads
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
- G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B5/60—Fluid-dynamic spacing of heads from record-carriers
- G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
- G11B5/6082—Design of the air bearing surface
Abstract
本申请涉及具有不共形屏蔽的叠瓦式磁写入器，描述了一种叠瓦式磁写入装置。该叠瓦式磁写入装置包括极、侧间隙、写入间隙、顶部屏蔽以及一个或更多个侧屏蔽。该极具有磁极尖区域，该磁极尖区域包括比底部宽的顶部以及侧部。这些侧部位于相对于沿轨道方向的侧壁角处。该写入间隙与该极顶部相邻，并且位于该顶部屏蔽与该极顶部之间。该一个或更多个侧屏蔽与该顶部屏蔽磁性连接并且延伸超出该极的底部。该侧间隙位于该一个或更多个侧屏蔽与该极之间。该一个或更多个侧屏蔽具有一个或更多个面向极的表面，其不超过相对于该沿轨道方向的侧屏蔽角。该侧屏蔽角小于该侧壁角。该侧间隙宽度从该间隙附近的顶部至该极的底部附近的底部增加。
Description
背景技术
为了以较高面密度记录数据，可以使用叠瓦式磁记录。图1描绘了常规磁记录系统10的空气轴承表面(ABS)视图，该常规磁记录系统10包括能够实现叠瓦式磁记录方案的常规极20。除了写入极20之外，也示出了针对常规极20的场22。在叠瓦式磁记录方案中，连续的轨道仅重写一个方向上的先前轨道。图1因此描绘了具有由主极20的场22所写的比特的轨道30、32、34以及36。首先写入轨道30，然后按顺序写入轨道32、34以及36。通过使用叠瓦式磁记录方案，具有相对大的磁极尖几何结构的磁极20可以用于在较高面密度写入。
尽管常规磁记录系统10对叠瓦式磁记录起作用，但是存在缺点。具体地，极20对轨道边缘以及缩小的轨道曲率可以具有严格要求。从而，可能需要由小的侧间隙从极20分离的侧屏蔽(未示出)。诸如广域轨道擦除退化、侧屏蔽上磁通量的集中、由小的侧间隙引起的写入场损失以及增加的上升时间等问题也可能不利地影响常规磁记录系统20的性能。因此，所需要的是一种用于提高磁记录头性能的系统和方法，尤其是针对叠瓦式磁记录。
附图说明
图1描绘了可以实现叠瓦式磁记录的常规磁记录系统的ABS视图。
图2A和图2B描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的一种示例性实施例的侧视图和ABS视图。
图3描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图4描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图5描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图6描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图7描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图8描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图9描绘了在叠瓦式磁记录中可使用的磁记录磁盘驱动器的另一示例性实施例的ABS视图。
图10是描绘了一种用于制造在叠瓦式磁记录中可使用的磁记录磁盘驱动器的方法的示例性实施例的流程图。
具体实施方式
虽然披露的各个实施例适用于各种各样的数据存储设备，诸如磁记录磁盘驱动器、固态混合磁盘驱动器、连网的存储系统等，出于说明目的，下述说明将以磁盘驱动器为例。
图2A和2B描绘了在叠瓦式磁记录中可使用的写入装置的侧视图和ABS视图。在所示的实施例中，写入装置是在叠瓦式磁记录中可使用的磁盘驱动器100。图2A描绘了磁盘驱动器100的侧视图。图2B描绘了磁盘驱动器100的一部分的ABS视图。为清楚起见，图2A至图2B没有按比例。为简单起见，并未示出磁盘驱动器100的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器100，但是可以使用其他和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。磁盘驱动器100可以是垂直磁记录(PMR)磁盘驱动器。然而，在其他实施例中，磁盘驱动器100可以被配置成用于其他类型的磁记录。磁盘驱动器100也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器100通常包括写入换能器120以及读出换能器。然而，仅描绘了写入换能器120。
磁盘驱动器100包括介质102以及滑块110，并且换能器120已经被制造在该滑块100上。尽管未示出，但滑块110以及因此换能器120一般附接到悬架上。通常，滑块110包括写入换能器120以及读出换能器(未示出)。然而，为清楚起见，仅示出了写入换能器120。
换能器120包括(一个或更多个)线圈122、极130、可选的底部屏蔽140、侧屏蔽150、顶部屏蔽160、写入间隙170、侧间隙180以及底部间隙190。极130是有磁性的，并且可以具有大于2.0T的高饱和磁化强度。极130具有磁极尖区域，该磁极尖区域包括底部以及比该底部宽的顶部。图2B示出了磁极尖130的一部分占用了ABS。从而，出于本文中ABS视图的目的，术语“极”和“磁极尖”被互换地使用。从而，极130的这些侧部位于相对于沿轨道方向(downtrack direction)的侧壁角α处。由于极130的顶部比底部宽，侧壁角是非零的。在所示的实施例中，磁极尖的底部是尖利的。从而，磁极尖130在ABS处形成一个三角形。其他形状也是可能的。例如，磁极尖130可以是不规则的四边形，其中，较长的两个平行边是极130的顶部。极130的顶部与写入间隙170相邻。在一些实施例中，侧壁角不超过15度。在某些这种实施例中，侧壁角为至少12度。在其他实施例中，侧壁角不超过9度。在某些这种实施例中，侧壁角为至少4度。其他侧壁角也是可能的。
在所示的实施例中，由写入间隙170将顶部屏蔽160与极130分离。由侧间隙180将侧屏蔽150与极130的侧壁分离。由底部间隙190将底部屏蔽140与极130的底部分离。在底部屏蔽140被省略的实施例中，底部间隙190可以将磁极尖130的底部与底层结构分离。间隙170、180以及190是无磁性的。间隙170、180以及190中的至少一些包括无磁性绝缘体。然而，可以使用其他材料。
侧屏蔽150与顶部屏蔽160磁性连接并且以距离h延伸超出磁极尖130的底部。h是非零的，并且在存在底部屏蔽140的情况下，h基本上是底部间隙190的高度。侧间隙180位于侧屏蔽150与磁极尖130之间。
侧屏蔽150具有以相对于沿轨道方向的侧屏蔽角β被定向的面向极的表面152。侧屏蔽角小于侧壁角(β＜α)。侧屏蔽角使得：底部屏蔽140处的侧屏蔽之间的间距大于顶部屏蔽160处的侧屏蔽之间的间距。注意，如果侧屏蔽角与侧壁角α相同，顶部屏蔽160处以及底部屏蔽140处的侧屏蔽150之间的间距将为相同的。从而，侧屏蔽150与极130不共形并且被配置成使得侧屏蔽150的底部距极130的距离比侧屏蔽150的顶部距极130的距离远。在一些实施例中，侧屏蔽角不超过侧壁角的一半(β≤α/2)。从而，侧间隙180的宽度从磁极尖130的顶部朝向极顶部130的底部单调地增加(只增加不降低)。在某些这种实施例中，侧屏蔽角不超过侧壁角的三分之一(β≤α/3)。从而，在一些实施例中，侧屏蔽角不超过相对于沿轨道方向的5度。在某些这种实施例中，侧屏蔽角不小于相对于沿轨道方向的2度(2度≤β≤5度)。从而，面向极的表面152接近垂直或处于垂直(接近平行于或处于平行于沿轨道方向)。尽管在图2B中的相对于沿轨道方向的具体方向示出了侧屏蔽角，但在其他实施例中，侧屏蔽角可以处于相对于沿轨道方向的相反方向上。侧屏蔽角不超过具体值意味着侧屏蔽壁处于相对于沿轨道方向的任一方向上的该具体值范围之内。例如，在侧屏蔽角不超过相对于沿轨道方向的2度的实施例中，侧屏蔽150的面向极的表面152可以以角度β较接近沿轨道方向成角度或可以以角度β距极130更远成角度。
由于侧壁角α与侧屏蔽角β之间的关系，侧间隙180具有变化的宽度。在磁极尖130的顶部附近，侧间隙180具有宽度w1。该宽度增加至宽度w2。在磁极尖130的底部，宽度是最大的w3(w1≤w2≤w3)。进一步地，后缘(顶部)上的侧间隙可以是薄的。在一些实施例中，w1不超过1.5乘以写入间隙170的厚度。侧间隙宽度w1可以不超过40纳米。在所示的实施例中，w1可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙180在其顶部上不大于25纳米(w1≤25nm)。除朝向磁极尖130的底部的侧间隙180的增大的尺寸之外，底部间隙190大于侧间隙的底部(w3＜h)。在一些实施例中，h大约为100纳米。由于极130和侧屏蔽150的几何结构，侧间隙在磁极尖130的顶部/写入间隙170附近保持薄。这是换能器120写入介质102的区域。从而，期望用于叠瓦式磁记录的写入的小的侧间隙180被保留。
磁盘驱动器100在叠瓦式磁记录方面可以具有改进的性能。极130和侧屏蔽150的配置可以改善叠瓦式写入。例如，极130的后缘(顶部)处的小的侧间隙(w1)可以改善轨道边缘写入和清除。从而，写入器磁漏可以被减轻。底部(前面的)屏蔽140的使用可以减少通量分流，从而提高可写入性。也可以改善广域轨道消磁(WATER)。也可以改善场上升时间、数据速率以及场梯度。从而，磁盘驱动器100的性能可以因此得到改进。
图3描绘了适合用于叠瓦式磁记录中的磁盘驱动器100’和换能器120’的另一实施例的ABS视图。为清楚起见，图3没有按比例。为简单起见，并未示出磁盘驱动器100’的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器100’，但是可以使用其他和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。磁盘驱动器100’可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器100’可以被配置成用于其他类型的磁记录。磁盘驱动器100’也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器100’通常包括写入换能器120’以及读出换能器。然而，仅描绘了写入换能器120’。磁盘驱动器100’以及换能器120’分别对应于磁盘驱动器100以及换能器120。因此，类似部件以类似标号标示。例如，换能器120’包括写入极130、底部屏蔽140、侧屏蔽150’、顶部屏蔽160、写入间隙170、侧间隙180’以及底部间隙190。部件130、140、150’、160、170、180’以及190的结构和功能分别类似于写入换能器120的部件130、140、150、160、170、180以及190的结构和功能。
极130具有磁极尖区域，该磁极尖区域包括底部以及比该底部宽的顶部，并且如图3所示，该磁极尖区域可以占用ABS的一部分。极130的顶部与写入间隙170相邻。从而，极130的这些侧部位于相对于沿轨道方向的侧壁角α处。在所示的实施例中，磁极尖的底部是尖利的。从而，磁极尖130在ABS处形成一个三角形。具有顶部比底部宽的其他形状也是可能的。例如，磁极尖130可以是不规则四边形。在一些实施例中，侧壁角为至少12度且不超过15度。在其他实施例中，侧壁角为至少4度且不超过9度。其他侧壁角也是可能的。
侧屏蔽150’具有以相对于沿轨道方向的侧屏蔽角β被定向的面向极的表面152’。侧屏蔽角小于侧壁角(β＜α)。侧屏蔽150’与极130不共形。侧屏蔽150’的底部距极130的距离比侧屏蔽150’的顶部距极的距离远。针对侧屏蔽150’，侧壁角处于相对于沿轨道方向的相反方向上，这不同于侧屏蔽150。从而，底部屏蔽处的侧屏蔽150’之间的间距大于顶部屏蔽处的侧屏蔽150’之间的间距。针对换能器120’的侧壁角与侧屏蔽角之间的关系可以与针对换能器120的关系相同。例如，在一些实施例中，侧屏蔽角不超过侧壁角的一半(β≤α/2)。侧间隙180’的宽度也可以从磁极尖130的顶部朝向极顶部130的底部单调地增加。在某些这种实施例中，侧屏蔽角不小于相对于沿轨道方向的2度(2度≤β≤5度)。从而，面向极的表面152’接近垂直或处于垂直(接近平行于或处于平行于沿轨道方向)。侧屏蔽150’也与顶部屏蔽160磁耦合。
由于侧壁角α与侧屏蔽角β之间的关系，侧间隙180具有变化的宽度。在磁极尖130的顶部附近，侧间隙180具有宽度w1’，宽度w1’可以几乎与图2B中的宽度w1相同。该宽度增加至宽度w2’。这个宽度大于图2B的宽度w2。在磁极尖130的底部处，宽度是最大的w3’(w1’≤w2’≤w3’)。这个宽度也大于图2B中所描绘的宽度w3。换言之，w1’≈w1、w2’＞w2、w3’＞w3、w1’≤w2’≤w3’、并且w1≤w2≤w3。进一步地，后缘(顶部)处的侧间隙180’可以是薄的。在一些实施例中，w1’不超过1.5乘以写入间隙170的厚度。侧间隙宽度w1’可以不超过40纳米。在所示的实施例中，w1’可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙180’在其顶部处不大于25纳米(w1≤25nm)。除侧间隙180’的增大的尺寸之外，底部间隙190大于侧间隙的底部(w3’＜h)。在一些实施例中，h大约为100纳米。
磁盘驱动器100’可以共享磁盘驱动器100的益处。极130和侧屏蔽150’的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以改进场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器100’的性能可以因此得到改进。
图4描绘了适合用于叠瓦式磁记录中的磁盘驱动器100”和换能器120”的另一实施例的ABS视图。为清楚起见，图4没有按比例。为简单起见，并未示出磁盘驱动器100”的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器100”，但是可以使用其他和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。
磁盘驱动器100”可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器100”可以被配置成用于其他类型的磁记录。磁盘驱动器100”也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器100”通常包括写入换能器120”以及读出换能器。然而，仅描绘了写入换能器120”。磁盘驱动器100”以及换能器120”分别对应于磁盘驱动器100/100’以及换能器120/120’。因此，类似部件以类似标号标示。例如，换能器120”包括写入极130、底部屏蔽140、侧屏蔽150”、顶部屏蔽160、写入间隙170、侧间隙180”以及底部间隙190。部件130、140、150”、160、170、180”以及190的结构和功能分别类似于写入换能器120/120’的部件130、140、150/150’、160、170、180/180’以及190的结构和功能。
极130具有磁极尖区域，该磁极尖区域包括底部以及比该底部宽的顶部。从而，磁极尖130的这些侧部位于相对于沿轨道方向的侧壁角α处。在所示的实施例中，磁极尖的底部是尖利的。从而，磁极尖130在ABS处形成一个三角形。具有顶部比底部宽的其他形状也是可能的。在一些实施例中，侧壁角为至少12度且不超过15度。在其他实施例中，侧壁角为至少4度且不超过9度。其他侧壁角也是可能的。
侧屏蔽150”具有以相对于沿轨道方向的侧屏蔽角β被定向的面向极的表面152”。在图4所示的实施例中，β＝0。从而，侧屏蔽150”的面向极的表面152”基本上平行于沿轨道方向。由于极130的顶部比底部宽，侧壁角是非零的。侧屏蔽角小于侧壁角(0＝β＜α)。侧屏蔽150”与极130不共形。侧屏蔽150”的底部距极130的距离比侧屏蔽150”的顶部距极的距离远。底部屏蔽140处的侧屏蔽150”之间的间距与顶部屏蔽160处的侧屏蔽150”之间的间距相同。侧间隙180”的宽度也可以从磁极尖130的顶部朝向极顶部130的底部单调地增加。侧屏蔽150”也与顶部屏蔽160磁耦合。
由于侧壁角α与侧屏蔽角β之间的关系，侧间隙180”具有变化的宽度。在磁极尖130的顶部附近，侧间隙180具有宽度w1”，宽度w1”可以几乎与图2B中的宽度w1相同。该宽度增加至宽度w2”。这个宽度大于图2B的宽度w2。在磁极尖130的底部处，宽度是最大的w3”(w1”≤w2”≤w3”)。在一些实施例中，w1”不超过1.5乘以写入间隙170的厚度。侧间隙宽度w1”可以不超过40纳米。在所示的实施例中，w1”可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙180”在其顶部处不大于25纳米(w1”≤25nm)。除侧间隙180”的增大的尺寸之外，底部间隙190大于侧间隙的底部(w3’＜h)。在一些实施例中，h大约为100纳米。
磁盘驱动器100”可以共享磁盘驱动器100和100’的益处。极130和侧屏蔽150”的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以改进场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器100’的性能可以因此得到改进。
图5描绘了适合用于叠瓦式磁记录的磁盘驱动器100”’和换能器120”’的另一实施例的ABS视图。为清楚起见，图5没有按比例。为简单起见，并未示出磁盘驱动器100”’的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器100”’，但是可以使用其他的和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。
磁盘驱动器100”’可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器100”’可以被配置成用于其他类型的磁记录。磁盘驱动器100”’也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器100”’通常包括写入换能器120”’以及读出换能器。然而，仅描绘了写入换能器120”’。磁盘驱动器100”’和换能器120”’分别对应于磁盘驱动器100/100’/100”和换能器120/120’/120”。因此，类似部件以类似标号标示。例如，换能器120”’包括写入极130、底部屏蔽140、侧屏蔽150”、顶部屏蔽160、写入间隙170’、侧间隙180”以及底部间隙190。部件130、140、150”、160、170、180”以及190的结构和功能分别类似于写入换能器120/120’/120”的部件130、140、150/150’、160、170、180/180’以及190的结构和功能。
极130具有磁极尖区域，该磁极尖区域包括底部以及比该底部宽的顶部。从而，磁极尖130的这些侧部位于相对于沿轨道方向的侧壁角α处。在所示的实施例中，磁极尖的底部是尖利的。从而，磁极尖130在ABS处形成一个三角形。具有顶部比底部宽的其他形状也是可能的。在一些实施例中，侧壁角为至少12度且不超过15度。在其他实施例中，侧壁角为至少4度且不超过9度。其他侧壁角也是可能的。
侧屏蔽150”’具有面向极的表面152”’。在所示的实施例中，面向极的表面152”’处于沿轨道方向(如图5所看出的垂直方向)。也示出了相对于沿轨道方向的角β处的虚线。虚线表明尽管在0度的侧屏蔽角处示出，但是面向极的表面152”’可以以相对于沿轨道方向的非零侧屏蔽角β被定向。换能器120”’的侧屏蔽角和侧壁角具有上述的类似关系。例如，侧屏蔽角小于侧壁角(β＜α)。侧屏蔽150”’与极130不共形。侧屏蔽150”的底部距极130的距离比侧屏蔽150”的顶部距极130的距离远。侧屏蔽150”’也与顶部屏蔽160磁耦合。
另外，写入间隙170’、侧屏蔽150”’以及顶部屏蔽160被配置成使得写入间隙170’具有突出的长度t。在一些实施例中，该突出部分可以是小的，例如，至少20纳米且不超过40纳米。在其他实施例中，该突出部分可以是大的。例如，该突出部分可以是至少90纳米且不超过120纳米。然而，其他尺寸的突出部分也是可能的。
由于侧壁角α与侧屏蔽角β之间的关系，侧间隙180”具有变化的宽度。在磁极尖130的顶部附近，侧间隙180具有宽度w1”，宽度w1”可以几乎与图2B中的宽度w1相同。该宽度增加至宽度w2”。这个宽度大于图2B的宽度w2。在磁极尖130的底部处，宽度是最大的w3”(w1”≤w2”≤w3”)。在一些实施例中，w1”不超过30纳米。在某些这种实施例中，侧间隙180”在其顶部处不大于25纳米(w1”≤25nm)。除侧间隙180’的增大的尺寸之外，底部间隙190大于侧间隙的底部(w3’＜h)。在一些实施例中，h大约为100纳米。
磁盘驱动器100”’可以共享磁盘驱动器100、100’和100”的益处。极130和侧屏蔽150”’的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以改进场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器100’的性能可以因此得到改进。
图6描绘了适合用于叠瓦式磁记录的磁盘驱动器200和换能器220的另一实施例的ABS视图。为清楚起见，图6没有按比例。为简单起见，并未示出磁盘驱动器200的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器200，但是可以使用其他和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。磁盘驱动器200可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器200可以被配置成用于其他类型的磁记录。磁盘驱动器200也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器200通常包括写入换能器220以及读出换能器。然而，仅描绘了写入换能器220。磁盘驱动器200和换能器220分别对应于磁盘驱动器100/100’/100”/100”’和换能器120/120’/120”/120”’。因此，类似部件以类似标号标示。例如，换能器220包括写入极230、侧屏蔽250、顶部屏蔽260、写入间隙270、侧间隙280以及底部间隙290。部件230、250、260、270、280以及290的结构和功能分别类似于写入换能器120/120’/120”/120”’的部件130、150/150’/150”/150”’、160、170/170’、180/180’/180”/180”以及190的结构和功能。
换能器220最类似于图2A至图2B所描绘的换能器120。这是因为面向极的表面252位于相对于沿轨道方向的侧屏蔽角β处，并且在极230的底部附近一起更接近。从而，侧壁角α与侧屏蔽角之间的关系与以上所描述的类似。在一些实施例中，侧屏蔽角与侧壁角的实际值如上所述。从而，侧屏蔽250与极230不共形。面向极的表面252也接近垂直或处于垂直。侧间隙280具有朝向磁极尖230的底部增加的宽度。例如，w1≤w2≤w3。在一些实施例中，w1不超过1.5乘以写入间隙270的厚度。侧间隙宽度w1可以不超过40纳米。在所示的实施例中，w1可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙280在其顶部处不大于25纳米(w1≤25nm)。侧屏蔽250也与顶部屏蔽260磁耦合。
代替底部屏蔽，侧屏蔽250延伸超出磁极尖230的底部。在一些实施例中，侧屏蔽250以距离1延伸超出磁极尖230的底部，距离1是ABS处磁极尖高度的至少两倍并且不超过ABS处的磁极尖高度的五倍。在一些实施例中，磁极尖230的高度为90纳米，并且侧屏蔽250以至少300纳米且不超过400纳米延伸超出ABS处的磁极尖230的底部。
磁盘驱动器200可以共享磁盘驱动器100、100’、100”和/或100”’的益处。极230和侧屏蔽250的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以改进场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器200的性能可以因此得到改进。在磁盘驱动器200中，可以实现这些益处中的一个或更多个，尽管换能器220不包括底部屏蔽。相反，侧屏蔽250在磁极尖230的底部的下面在沿轨道方向延伸充分的距离，使得本文中所描述的一个或更多个益处可以被实现。
图7描绘了适合用于叠瓦式磁记录的磁盘驱动器200’和换能器220’的另一实施例的ABS视图。为清楚起见，图7没有按比例。为简单起见，并未示出磁盘驱动器200’的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器200’，但是可以使用其他和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。磁盘驱动器200’可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器200’可以被配置成用于其他类型的磁记录。磁盘驱动器200’也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器200’通常包括写入换能器220’以及读出换能器。然而，仅描绘了写入换能器220’。磁盘驱动器200’和换能器220’分别对应于磁盘驱动器100/100’/100”/100”’和200以及换能器120/120’/120”/120”’和220。因此，类似部件以类似标号标示。例如，换能器220’包括写入极230、侧屏蔽250’、顶部屏蔽260、写入间隙270、侧间隙280’以及底部间隙290。部件230、250’、260、270、280’以及290的结构和功能分别类似于写入换能器120/120’/120”/120”’以及200的部件130和230、150/150’/150”/150”’和250、160和260、170/170’和270、180/180’/180”/180”和280以及190和290的结构和功能。
换能器220’最类似于图3和图6分别描绘的换能器120’和220。这是因为面向极的表面252’位于相对于沿轨道方向的侧屏蔽角β处，面向极的表面252’在极230的底部附近进一步分开，以及由于底部屏蔽140被省略。从而，侧壁角α与侧屏蔽角之间的关系与以上所描述的类似。在一些实施例中，侧屏蔽角与侧壁角的实际值如上所述。面向极的表面252’也接近于垂直或处于垂直。从而，侧屏蔽250’与极230不共形。侧间隙280’具有朝向磁极尖230的底部增加的宽度。例如，w1’≤w2’≤w3’。在一些实施例中，w1’不超过1.5乘以写入间隙270的厚度。侧间隙宽度w1’可以不超过40纳米。在所示的实施例中，w1’可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙280’在其顶部处不大于25纳米(w1’≤25nm)。侧屏蔽250’也与顶部屏蔽260磁耦合。
代替底部屏蔽，侧屏蔽250’延伸超出磁极尖230的底部。在一些实施例中，侧屏蔽250’以距离1延伸超出磁极尖230的底部，距离1是ABS处的磁极尖高度的至少两倍并且不超过ABS处的磁极尖高度的五倍。在一些实施例中，磁极尖230的高度为90纳米，并且侧屏蔽250’以至少300纳米且不超过400纳米延伸超出ABS处的磁极尖230的底部。
磁盘驱动器200’可以共享磁盘驱动器100、100’、100”、100”’和/或200的益处。极230和侧屏蔽250’的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以改进场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器200’的性能可以因此得到改进。在磁盘驱动器200’中，可以实现这些益处中的一个或更多个，尽管换能器220’不包括底部屏蔽。
图8描绘了适合用于叠瓦式磁记录的磁盘驱动器200”和换能器220”的另一实施例的ABS视图。为清楚起见，图8没有按比例。为简单起见，并未示出磁盘驱动器200”的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器200”，但是可以使用其他和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。磁盘驱动器200”可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器200”可以被配置成用于其他类型的磁记录。磁盘驱动器200”也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器200”通常包括写入换能器220”以及读出换能器。然而，仅描绘了写入换能器220”。磁盘驱动器200”和换能器220”分别对应于磁盘驱动器100/100’/100”/100”’和200/200’以及换能器120/120’/120”/120”’和220/220’。因此，类似部件以类似标号标示。例如，换能器220”包括写入极230、侧屏蔽250”、顶部屏蔽260、写入间隙270、侧间隙280”以及底部间隙290。部件230、250”、260、270、280”以及290的结构和功能分别类似于写入换能器120/120’/120”/120”’以及200/200’的部件130和230、150/150’/150”/150”’和250/250’、160和260、170/170’和270、180/180’/180”/180”和280/280’以及190和290的结构和功能。
换能器220”最类似于图3、图6和图7中分别描绘的换能器120”、220和220’。这是因为面向极的表面252”位于相对于沿轨道方向(基本上平行或垂直)的0度的侧屏蔽角(β＝0)处，并且因为底部屏蔽140被省略。从而，侧壁角α与侧屏蔽角之间的关系与以上所描述的类似。在一些实施例中，侧屏蔽角与侧壁角的实际值如上所述。从而，侧屏蔽250”与极230不共形。侧间隙280”具有朝向磁极尖230的底部增加的宽度。例如，w1”≤w2”≤w3”。在一些实施例中，w1”不超过1.5乘以写入间隙270的厚度。侧间隙宽度w1”可以不超过40纳米。在所示的实施例中，w1”可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙280”在其顶部处不大于25纳米(w1”≤25nm)。侧屏蔽250”也与顶部屏蔽260磁耦合。
代替底部屏蔽，侧屏蔽250”延伸超出磁极尖230的底部。在一些实施例中，侧屏蔽250”以距离1延伸超出磁极尖230的底部，距离1是ABS处的磁极尖高度的至少两倍并且不超过ABS处的磁极尖高度的五倍。在一些实施例中，磁极尖230的高度为90纳米，并且侧屏蔽250”以至少300纳米且不超过400纳米延伸超出ABS处的磁极尖230的底部。
磁盘驱动器200”可以共享磁盘驱动器100、100’、100”、100”’、200和/或200’的益处。极230和侧屏蔽250”的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以提高场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器200”的性能可以因此得到改进。在磁盘驱动器200”中，可以实现这些益处中的一个或更多个，尽管换能器220”不包括底部屏蔽。
图9描绘了适合用于叠瓦式磁记录中的磁盘驱动器200”’和换能器220”’的另一实施例的ABS视图。为清楚起见，图9没有按比例。为简单起见，并未示出磁盘驱动器200”’的所有部分。另外，尽管在具体部件的背景下描绘了磁盘驱动器200”’，但是可以使用其他的和/或不同的部件。例如，未示出用于驱动和控制磁盘驱动器的各个部分的电路。为简单起见，仅示出了单个部件。然而，可以使用每一个部件和/或它们的子部件中的多个。磁盘驱动器200”’可以是PMR磁盘驱动器。然而，在其他实施例中，磁盘驱动器200”’可以被配置成用于其他类型的磁记录。磁盘驱动器200”’也可以使用叠瓦式磁记录方案。然而，在其他实施例中，可以使用其他记录方案。磁盘驱动器200”’通常包括写入换能器220”’以及读出换能器。然而，仅描绘了写入换能器220”’。磁盘驱动器200”’和换能器220”’分别对应于磁盘驱动器100/100’/100”/100”’和200/200’/200”’以及换能器120/120’/120”/120”’和220/220’/220”。因此，类似部件以类似标号标示。例如，换能器220”’包括写入极230、侧屏蔽250”’、顶部屏蔽260、写入间隙270’、侧间隙280”以及底部间隙290。部件230、250”’、260、270’、280”以及290的结构和功能分别类似于写入换能器120/120’/120”/120”’以及200/200’/200”的部件130和230、150/150’/150”/150”’和250/250’/250”、160和260、170/170’和270、180/180’/180”/180”和280/280’/280”以及190和290的结构和功能。
换能器220”’最类似于图3和图6至图8分别描绘的换能器120”’、220、220’以及220”。这是因为面向极的表面252”位于相对于沿轨道方向(基本上平行或垂直)的0度的侧屏蔽角(β＝0)处，因为写入间隙270’具有突出部分，并且因为底部屏蔽140被省略。从而，侧壁角α与侧屏蔽角之间的关系与以上所描述的类似。在一些实施例中，侧屏蔽角与侧壁角的实际值如上所述。从而，侧屏蔽250”’与极230不共形。侧间隙280”具有朝向磁极尖230的底部的增加的宽度。例如，w1”≤w2”≤w3”。在一些实施例中，w1”不超过1.5乘以写入间隙270的厚度。侧间隙宽度w1”可以不超过40纳米。在所示的实施例中，w1”可以是至少15纳米且不超过35纳米。在某些这种实施例中，侧间隙280”在其顶部处不大于25纳米(w1”≤25nm)。尽管面向极的表面252”被示出为垂直的，但位于相对于沿轨道方向的角β处的虚线表明面向极的表面252”可以处于相对于沿轨道方向的该角度的范围之内。换言之，面向极的表面252”不需要是垂直的。相反，它们可以是相对于垂直的小角度。另外，写入间隙270’具有突出的长度t。该突出部分具有与间隙170’的突出部分相类似的范围。侧屏蔽250”’也与顶部屏蔽260磁耦合。
代替底部屏蔽，侧屏蔽250”’延伸超出磁极尖230的底部。在一些实施例中，侧屏蔽250”’以距离1延伸超出磁极尖230的底部，距离1是ABS处的磁极尖高度的至少两倍并且不超过ABS处的磁极尖高度的五倍。在一些实施例中，磁极尖230的高度为90纳米，并且侧屏蔽250”’以至少300纳米且不超过400纳米延伸超出ABS处的磁极尖230的底部。
磁盘驱动器200”’可以共享磁盘驱动器100、100’、100”、100”’、200、200’和/或200”的益处。极230和侧屏蔽250”’的配置可以改进轨道边缘写入和擦除，可以减少写入器磁漏，可以减少通量分流，从而可以提高可写入性并改进WATER。也可以改进场上升时间、数据速率以及场梯度。用于叠瓦式记录的磁盘驱动器200”’的性能可以因此得到改进。在磁盘驱动器200”’中，可以实现这些益处中的一个或更多个，尽管换能器220”’不包括底部屏蔽。
图2A至图9中示出了磁盘驱动器100、100’、100”、100”’、200、200’、200”以及200”’的各种配置。本领域普通技术人员将认识到，磁盘驱动器100、100’、100”、100”’、200、200’、200”以及200”’的各种特征可以以与本文中描述的方法和系统不一致的一种或更多种方式组合。
图10描绘了一种用于提供磁写入装置(诸如磁盘驱动器)的方法300的示例性实施例。然而，其他磁记录设备可以被制造。为简单起见，一些步骤可以被省略、交错、结合和/或以另一顺序执行。方法300在提供单个磁记录换能器的背景下被描述。然而，方法300可以用于基本上同时制造多个磁记录换能器。方法300也在具体结构的背景下被描述。具体结构可以包括多种材料、多个子结构和/或多个子层。方法300在磁盘驱动器100的背景下被描述。然而，方法300可以用于制造其他磁盘驱动器，包括但不限于磁盘驱动器100’、100”、100”’、200、200’、200”和/或200”’。方法300也可以在磁记录换能器的其他部分被制造以后开始。例如，方法300可以在读出换能器、返回极/屏蔽和/或其他结构已经被制造之后开始。
底部屏蔽140可以经由步骤302被可选地提供。步骤302可以包括提供多层或单片(单层)磁屏蔽。在其他实施例中，步骤302可以被省略。
底部屏蔽190可以经由步骤304被提供。步骤304可以包括沉积非磁性层。在一些实施例中，底部间隙和侧间隙180由单层形成并且被一起提供。在底部屏蔽140被省略的实施例中，步骤304中提供的底部间隙190被期望如上所描述的一样厚。从而，侧屏蔽很好地在磁极尖130的底部的下面延伸。极130经由步骤306被提供。步骤306提供了极，从而使得顶部比底部宽。从而，形成侧壁角α。侧间隙180经由步骤308形成。如果侧间隙180与底部间隙190一起形成，步骤308的至少一部分可以与步骤304结合。
侧屏蔽150经由步骤310被提供。从而，具有接近(或处于)垂直的面向极的表面152的侧屏蔽150可以被制造。顶部屏蔽160经由步骤312被提供。顶部屏蔽190与侧屏蔽150磁耦合。从而，侧屏蔽150可以物理地接触顶部屏蔽160。然后，可以完成磁盘驱动器100的制造。
使用方法300可以提供换能器120。换能器120’、120”、120”’、220、220’、220”和/或220”’可以以类似的方式被制造。从而，可以实现上述用于叠瓦式记录的益处。
Claims (19)
1.一种叠瓦式磁写入装置，包括：
具有磁极尖区域的极，该磁极尖区域包括底部、比该底部宽的顶部、位于相对于沿轨道方向的侧壁角处的第一侧以及第二侧；
与至少该第一侧和该第二侧相邻的侧间隙；
与该极的顶部相邻的写入间隙；
顶部屏蔽，该写入间隙位于该顶部屏蔽与该极的顶部之间；以及
至少一个侧屏蔽，该至少一个侧屏蔽与该顶部屏蔽磁性连接并且延伸超出该磁极尖区域的底部，该侧间隙位于该至少一个侧屏蔽与该极之间，该至少一个侧屏蔽具有不超过相对于该沿轨道方向的侧屏蔽角的至少一个面向极的表面，该侧屏蔽角小于该侧壁角。
2.如权利要求1所述的叠瓦式磁写入装置，其中，该侧屏蔽具有宽度，并且其中，该侧屏蔽角不超过该侧壁角的一半，从而使得该侧间隙的宽度从该极的顶部朝向该极的底部单调地增加。
3.如权利要求2所述的叠瓦式磁写入装置，其中，该侧屏蔽角不超过该侧壁角的三分之一。
4.如权利要求2所述的叠瓦式磁写入装置，其中，该侧屏蔽角不超过相对于该沿轨道方向的5度。
5.如权利要求4所述的叠瓦式磁写入装置，其中，该侧屏蔽角不超过相对于该沿轨道方向的2度。
6.如权利要求2所述的叠瓦式磁写入装置，其中，该侧壁角不超过15度并且是至少4度。
7.如权利要求6所述的叠瓦式磁写入装置，其中，该侧壁角不超过9度。
8.如权利要求6所述的叠瓦式磁写入装置，其中，该侧壁角为至少12度。
9.如权利要求2所述的叠瓦式磁写入装置，其中，该侧间隙具有宽度，进一步包括：
底部屏蔽；以及
底部间隙，该底部间隙位于该底部屏蔽与该极的底部之间，该底部间隙的高度大于该侧间隙的宽度。
10.如权利要求9所述的叠瓦式磁写入装置，其中，该底部屏蔽与该至少一个侧屏蔽磁耦合。
11.一种数据存储设备，包括：
介质；
滑块，该滑块具有空气轴承表面即ABS和叠瓦式磁写入换能器，该叠瓦式磁写入换能器包括极、侧间隙、写入间隙、顶部屏蔽和至少一个侧屏蔽，该至少一个侧屏蔽与该顶部屏蔽磁性连接，该极具有磁极尖区域，该磁极尖区域包括底部、比该底部宽的顶部、位于相对于沿轨道方向的侧壁角处的第一侧以及第二侧，该侧间隙与至少该第一侧和该第二侧相邻，该写入间隙与该极的顶部相邻，该写入间隙位于该顶部屏蔽与该极的顶部之间，该至少一个侧屏蔽与该顶部屏蔽磁性连接并且延伸超出该磁极尖区域的底部，该侧间隙位于该至少一个侧屏蔽与该极之间，该至少一个侧屏蔽具有不超过相对于该沿轨道方向的侧屏蔽角的至少一个面向极的表面，该侧屏蔽角不超过该侧壁角的三分之一并且不超过5度。
12.如权利要求10所述的数据存储设备，其中，该侧间隙具有宽度，并且其中，该叠瓦式写入换能器进一步包括：
底部屏蔽；以及
底部间隙，该底部间隙位于该底部屏蔽与该极的底部之间，该底部间隙的高度大于该侧间隙的宽度。
13.一种用于制造磁写入装置的方法，包括：
提供具有磁极尖区域的极，该磁极尖区域包括底部、比该底部宽的顶部以及位于相对于沿轨道方向的侧壁角处的多个侧部；
提供与至少该第一侧和该第二侧相邻的侧间隙；
提供与该极的顶部相邻的写入间隙；
提供顶部屏蔽，该写入间隙位于该顶部屏蔽与该极的顶部之间；以及
提供至少一个侧屏蔽，该至少一个侧屏蔽与该顶部屏蔽磁性连接并且延伸超出该磁极尖区域的底部，该侧间隙位于该至少一个侧屏蔽与该极之间，该至少一个侧屏蔽具有不超过相对于该沿轨道方向的侧屏蔽角的至少一个面向极的表面，该侧屏蔽角小于该侧壁角。
14.如权利要求13所述的方法，其中，该侧屏蔽具有宽度，并且其中，该侧屏蔽角不超过该侧壁角的一半，从而使得该侧间隙的宽度从该极的顶部朝向该极的底部单调地增加。
15.如权利要求14所述的方法，其中，该侧屏蔽角不超过该侧壁角的三分之一。
16.如权利要求14所述的方法，其中，该侧屏蔽角不超过相对于该沿轨道方向的5度。
17.如权利要求16所述的方法，其中，该侧屏蔽角不超过相对于该沿轨道方向的2度。
18.如权利要求14所述的方法，其中，该侧间隙具有宽度，该方法进一步包括：
提供底部屏蔽；并且
提供底部间隙，该底部间隙位于该底部屏蔽与该极的底部之间，该底部间隙的高度大于该侧间隙的宽度。
19.如权利要求18所述的方法，其中，该底部屏蔽与该至少一个侧屏蔽磁耦合。
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| Application Number | Priority Date | Filing Date | Title |
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| US14/871,763 US9595273B1 (en) | 2015-09-30 | 2015-09-30 | Shingle magnetic writer having nonconformal shields |
| US14/871,763 | 2015-09-30 |
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| CN106558324A true CN106558324A (zh) | 2017-04-05 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US9595273B1 (en) | 2017-03-14 |
| US20170092301A1 (en) | 2017-03-30 |
| CN106558324B (zh) | 2019-04-12 |
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Effective date of registration: 20200316 Address after: California, USA Patentee after: Western Digital Technologies, Inc. Address before: California, USA Patentee before: Western Digital (Fremont), LLC |