CN106548950A - 用于制作具有台阶式侧壁的ic的方法及相关ic器件 - Google Patents

用于制作具有台阶式侧壁的ic的方法及相关ic器件 Download PDF

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CN106548950A
CN106548950A CN201610192171.8A CN201610192171A CN106548950A CN 106548950 A CN106548950 A CN 106548950A CN 201610192171 A CN201610192171 A CN 201610192171A CN 106548950 A CN106548950 A CN 106548950A
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cutting
active surface
rear surface
chip
blade
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B·C·巴奎安
F·阿雷拉诺
A·M·阿谷唐
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STMicroelectronics Inc Philippines
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STMicroelectronics Inc Philippines
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Abstract

一种方法用于制作集成电路(IC)器件。该方法可以包括：将晶片划切成多个IC裸片，每个IC裸片具有活性表面、与该活性表面相反的后表面以及具有台阶的侧壁，其中，该台阶限定了与该后表面相邻的较小周边以及与该活性表面相邻的较大周边。该方法可以包括：在每个IC裸片的后表面与对应的衬底之间、并围绕每个IC裸片安置树脂材料，从而使得该树脂材料紧靠着该台阶并由该台阶保持住。

Description

用于制作具有台阶式侧壁的IC的方法及相关IC器件
技术领域
本披露涉及电子器件领域，并且更具体地涉及半导体器件及相关方法。
背景技术
在具有集成电路(IC)的电子器件中，IC通常安装到电路板上。为了电耦接在电路板和IC之间的连接，通常对IC进行“封装”。IC封装通常提供用于物理地保护IC的小型封套并且提供用于耦接至电路板的接触焊盘。在一些应用中，封装的IC可以经由焊料凸块耦接到电路板。
一种IC封装方法包括将IC安装到电路板上并经由多条键合接线将IC耦接至电路板。键合接线方法通常被认为是最成本有效且灵活的互连技术，并且用于组装绝大多数半导体封装体。
首先参照图1，现在描述用于制作IC器件100的典型方法。该方法包括将晶片109安置在载体层104上。晶片109包括多个IC裸片105a-105c，每个IC裸片具有活性表面107和后表面108。活性表面107包括电路111。该方法包括用第一和第二划切刀片101和102划切晶片109以从活性表面107将该多个IC裸片105a-105c切割成单片。一旦被切割成单片，每个IC裸片105a-105c就被安装到对应的电路板层103上，并且在IC裸片与对应的电路板层之间形成包封材料106。该方法还包括在IC裸片105a-105c与对应的电路板层103之间形成多条键合接线110a-110b。
发明内容
一般而言，一种方法用于制作IC器件。该方法可以包括将晶片划切成多个IC裸片。每个IC裸片可以具有活性表面、与该活性表面相反的后表面以及在其中具有台阶的侧壁，其中，该台阶限定了与该后表面相邻的较小周边以及与活性表面相邻的较大周边。该方法可以包括在每个IC裸片的后表面与对应的衬底之间、并围绕每个IC裸片安置树脂材料，从而使得该树脂材料紧靠着该台阶并由该台阶保持住。有利地，该方法可以提供生产IC器件的改进的成品率。
具体而言，安置该树脂材料可以包括将该树脂材料安置成不延伸超过该台阶。该方法可以进一步包括在划切之前将晶片安置在粘合剂载体层上、并且在划切之后从粘合剂载体层中去除该多个IC裸片。
同样，将该晶片安置在该粘合剂载体层上可以包括将该活性表面安置在该粘合剂载体层上。该方法还可以包括使用与这些IC裸片的后表面相邻的图像传感器装置来对准至少一个划切刀片。该晶片可以包括在该多个IC裸片的相邻裸片之间的多条划片线，并且该图像传感器装置可以感测这些划片线。在一些实施例中，该图像传感器装置可以包括红外图像传感器装置。
此外，划切该晶片可以包括使用第一划切刀片的第一部分划切以及使用第二划切刀片的第二部分划切。该第一划切刀片可以具有与该第二划切刀片的厚度不同的厚度。
另一方面涉及一种IC器件。该IC器件可以包括衬底以及与该衬底相邻的IC裸片。该IC裸片可以具有活性表面、与该活性表面相反的后表面以及其中具有台阶的侧壁，其中，该台阶限定了与后表面相邻的较小周边以及与该活性表面相邻的较大周边。该IC器件可以包括在该IC裸片的后表面与该衬底之间、并围绕该IC裸片的树脂材料，该树脂材料紧靠着该台阶、由该台阶保持住并且不延伸超过该台阶。
此外，该IC器件可以进一步包括在该衬底与该IC裸片之间延伸的多条键合接线。该活性表面可以包括电路。该较大周边可以具有在该较小周边的宽度的105％-125％范围内的宽度。
附图说明
图1是根据现有技术的用于制作IC器件的方法的步骤的示意性侧视图。
图2是根据现有技术的IC器件的示意性侧视图。
图3是根据本披露的用于制作IC器件的方法的步骤的示意性侧视图。
图4是根据本披露的IC器件的示意性侧视图。
图5是根据本披露的用于制作IC器件的方法的流程图。
图6是根据本披露的用于制作IC器件的方法的更详细的流程图。
具体实施方式
现在将在下文中参照附图更全面描述本披露，其中附图示出了本发明的若干实施例。然而本披露可以以许多不同的形式来实施，并且不应当被解释为限于在此所陈述的实施例。相反，提供这些实施例以使得本披露将是全面和完整的，并且将向本领域技术人员完全传达本披露的范围。贯穿全文相同的数字是指相同的元件。
现在参照图3和图4，现在描述根据本披露的IC器件10和用于制作IC器件的方法。IC器件10说明性地包括衬底(例如，电路板层或引线框部件)12、以及安装在该衬底上的IC裸片11。在一些实施例中，该衬底包括电路板层12，该电路板层包括电介质层以及由该电介质层承载的多条导电迹线。IC裸片11说明性地包括活性表面14、与该活性表面相反的后表面15以及侧壁16和17。活性表面14说明性地包括电路26以及多个键合键盘27a和27b。例如，电路26可以包括图像感测电路。
每个侧壁16-17具有台阶18-19，该台阶限定了与后表面15相邻的较小周边以及与活性表面14相邻的较大周边。尽管仅描绘了两个侧壁16-17，IC裸片11具有四个这种具有台阶18-19的侧壁16-17。
换言之，跨后表面15的宽度和长度小于跨活性表面14的宽度和长度。具体而言，较大周边可以分别具有在较小周边的宽度和长度的105％-125％范围内的宽度和长度。
IC器件10说明性地包括在IC裸片11的后表面15与衬底12之间、并围绕IC裸片的树脂材料(例如，环氧树脂材料)13，该树脂材料紧靠着台阶18和19、由这些台阶保持住并且不延伸超过这些台阶。有利地，严格地控制填角高度(即，从衬底12到这些台阶18和19所测量的树脂材料13的高度)，由此防止树脂材料污染/侵占活性表面14和该多个键合焊盘27a-27b。此外，IC器件10说明性地包括在衬底12的多条导电迹线与IC裸片11的多个键合焊盘27a-27b之间延伸的多条键合接线25a-25b。有益地，由于填角高度受到控制，这些键合接线25a-25b的形成不受树脂材料13影响。
现在另外参照图5和图6以及这些图中的流程图30、50，用于制作IC器件10的方法开始于框31和框51处。该方法说明性地包括将晶片23安置在粘合剂载体层22上。(框33)。晶片23说明性地包括多个IC裸片11a-11c。每个IC裸片11a-11c具有活性表面14a-14c以及与该活性表面相反的后表面15a-15c。具体而言，将晶片23安置成使得该多个IC裸片11a-11c的活性表面14a-14c向下面向粘合剂载体层22。具体而言，粘合剂载体层22可以包括正面保护(FSP)胶带。
该方法说明性地包括将晶片23划切成多个IC裸片11a-11c(即，单片切割步骤)。(框35、55)。该方法说明性地包括使用与IC裸片11a-11c的后表面15a-15c相邻的图像传感器装置24来对准第一和第二划切刀片20-21，即，划切是在IC裸片的后表面上执行的。如将被认识到的，晶片23包括在该多个IC裸片11a-11c的相邻裸片之间的多条划片线28(由虚线所示)，并且图像传感器装置24可以感测这些划片线。在一些实施例中，图像传感器装置24可以包括红外图像传感器装置。在一些实施例中，图像传感器装置24可以感测在晶片23中掩埋的金属化层。
此外，划切晶片23可以包括使用第一划切刀片20的第一部分划切以及使用第二划切刀片的第二部分划切21。第一划切刀片20可以具有与第二划切刀片21的厚度不同的厚度。每个IC裸片11a-11c具有多个侧壁16-17，并且如在图3中可能最佳所见的，多刀片划切限定了每个侧壁16-17具有限定了与后表面15a-15c相邻的较小周边以及与活性表面14a-14c相邻的较大周边的台阶18-19。在所展示的实施例中，第一划切刀片20比第二划切刀片21更厚，并且第二划切刀片比第一划切刀片划切至晶片23中更深的深度。有利地，在划切过程中，保护活性表面14a-14c免受碎片。
该方法说明性地包括在划切之后从粘合剂载体层22中去除该多个IC裸片11a-11c、并且将该多个IC裸片安装在对应的衬底12上。(框37)。该方法说明性地包括在每个IC裸片11a-11c的后表面15a-15c与对应的衬底12之间、并围绕每个IC裸片安置树脂材料13，从而使得树脂材料紧靠着台阶18-19并由该台阶保持住。(框39、59和框41、61)。具体而言，安置树脂材料13可以包括将树脂材料安置成不延伸超过台阶18-19。
在典型的方法中，如在图1和图2中所示的，制造工艺由于缺乏对填角高度的控制已经降低了产量。具体而言，包封材料106可能侵占IC裸片105a-105c的活性表面107并且侵占该多条键合接线110a-110b。实际上，随着IC裸片变得更薄(即，IC裸片高度约100μm)，填角高度控制问题已经变得更加显著。同样，图1和图2中的方法可能用划切过程产生的碎片污染活性表面107。有利地，该方法可以由于更少地侵占键合接线25a-25b以及活性表面14并且由于划切过程中更少地污染活性表面从而提供生产IC器件10的改进的成品率。
得益于在前述说明和相关联附图中呈现的教导，本领域技术人员将想到本披露的许多修改和其他实施例。因此，应该理解的是，本披露并不限于所披露的特定实施例，并且修改和实施例旨在包括于所附权利要求书的范围内。

Claims (20)

1.一种用于制作集成电路(IC)器件的方法，所述方法包括：
将晶片划切成多个IC裸片，每个IC裸片具有
活性表面，
与所述活性表面相反的后表面，以及
在其中具有台阶的侧壁，所述台阶限定了与所述后表面相邻的较小周边以及与所述活性表面相邻的较大周边；并且
在每个IC裸片的所述后表面与对应的衬底之间、并围绕每个IC裸片安置树脂材料，从而使得所述树脂材料紧靠着所述台阶并由所述台阶保持住。
2.如权利要求1所述的方法，其中，安置所述树脂材料包括将所述树脂材料安置成不延伸超过所述台阶。
3.如权利要求1所述的方法，进一步包括：
在划切之前将所述晶片安置在粘合剂载体层上；并且
在划切之后从所述粘合剂载体层中去除所述多个IC裸片。
4.如权利要求3所述的方法，其中，将所述晶片安置在所述粘合剂载体层上包括将所述活性表面安置到所述粘合剂载体层上。
5.如权利要求3所述的方法，进一步包括使用与所述多个IC裸片的所述后表面相邻的图像传感器装置来对准至少一个划切刀片。
6.如权利要求5所述的方法，其中，所述晶片包括在所述多个IC裸片的相邻裸片之间的多条划片线；并且其中，所述图像传感器装置感测所述多条划片线。
7.如权利要求5所述的方法，其中，所述图像传感器装置包括红外图像传感器装置。
8.如权利要求1所述的方法，其中，划切所述晶片包括使用第一划切刀片的第一部分划切、以及使用第二划切刀片的第二部分划切。
9.如权利要求8所述的方法，其中，所述第一划切刀片具有与所述第二划切刀片的厚度不同的厚度。
10.一种用于制作集成电路(IC)器件的方法，所述方法包括：
在划切之前将晶片安置在粘合剂载体层上；
将所述晶片划切成多个IC裸片，每个IC裸片具有
活性表面，
与所述活性表面相反的后表面，以及
在其中具有台阶的侧壁，所述台阶限定了与所述后表面相邻的较小周边以及与所述活性表面相邻的较大周边；
在划切之后从所述粘合剂载体层中去除所述多个IC裸片；并且
在每个IC裸片的所述后表面与对应的衬底之间、并围绕每个IC裸片安置树脂材料，从而使得所述树脂材料紧靠着所述台阶、由所述台阶保持住并且不延伸超过所述台阶。
11.如权利要求10所述的方法，其中，将所述晶片安置在所述粘合剂载体层上包括将所述活性表面安置到所述粘合剂载体层上。
12.如权利要求10所述的方法，进一步包括使用与所述多个IC裸片的所述后表面相邻的图像传感器装置来对准至少一个划切刀片。
13.如权利要求12所述的方法，其中，所述晶片包括在所述多个IC裸片的相邻裸片之间的多条划片线；并且其中，所述图像传感器装置感测所述多条划片线。
14.如权利要求12所述的方法，其中，所述图像传感器装置包括红外图像传感器装置。
15.如权利要求10所述的方法，其中，划切所述晶片包括使用第一划切刀片的第一部分划切、以及使用第二划切刀片的第二部分划切。
16.如权利要求15所述的方法，其中，所述第一划切刀片具有与所述第二划切刀片的厚度不同的厚度。
17.一种集成电路(IC)器件，包括：
衬底；
与所述衬底相邻的IC裸片，所述IC裸片具有
活性表面，
与所述活性表面相反的后表面，以及
在其中具有台阶的侧壁，所述台阶限定了与所述后表面相邻的较小周边以及与所述活性表面相邻的较大周边；以及
在所述IC裸片的所述后表面与所述衬底之间、并围绕所述IC裸片的树脂材料，所述树脂材料紧靠着所述台阶、由所述台阶保持住并且不延伸超过所述台阶。
18.如权利要求17所述的IC器件，进一步包括在所述衬底与所述IC裸片之间延伸的多条键合接线。
19.如权利要求17所述的IC器件，其中，所述活性表面包括电路。
20.如权利要求17所述的IC器件，其中，所述较大周边具有在所述较小周边的宽度的105％-125％范围内的宽度。
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