CN106537616A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
CN106537616A
CN106537616A CN201580038935.1A CN201580038935A CN106537616A CN 106537616 A CN106537616 A CN 106537616A CN 201580038935 A CN201580038935 A CN 201580038935A CN 106537616 A CN106537616 A CN 106537616A
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CN
China
Prior art keywords
electrode
light
emitting device
type semiconductor
conductive
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Granted
Application number
CN201580038935.1A
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Chinese (zh)
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CN106537616B (en
Inventor
蔡钟炫
俆大雄
金彰渊
孙成寿
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Priority to CN201911071816.2A priority Critical patent/CN110854251B/en
Priority claimed from PCT/KR2015/009087 external-priority patent/WO2016122076A1/en
Publication of CN106537616A publication Critical patent/CN106537616A/en
Application granted granted Critical
Publication of CN106537616B publication Critical patent/CN106537616B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.

Description

Light-emitting device
Technical field
The disclosure of patent document is related to light-emitting device.Some embodiments of disclosed technology are related to luminous dress Put, the light-emitting device is separated by the growth substrates by wafer scale and made.
Background technology
As the light-emitting device of the inorganic semiconductor devices by the recombination luminescence between electronics and hole, use recently In various fields, such as display, Vehicle lamp, conventional lighting devices etc..
Recently, it is consistent with the growth of the demand to small-sized high output light emitting device, for excellent heat-radiating efficiency The demand of large area flip chip type light-emitting device is also increasing.The electrode of flip chip type light-emitting device is bonded directly to secondary Substrate, and do not use for the wire to flip chip type light-emitting device supply external power source, so that flip chip type Light-emitting device has the radiation efficiency for being significantly higher than horizontal type light-emitting device.Therefore, although being applied with high-density current, heat can To be effectively conducted to secondary substrate, so that flip chip type light-emitting device is suitable for height output light source.
The content of the invention
Technical problem
The exemplary embodiment of patent document provides a kind of light-emitting device, and which can have by separating growth substrates There are the light efficiency and radiation efficiency of improvement.
The exemplary embodiment of patent document provides a kind of light-emitting device, and which includes supporting member, and pad is formed in Replace the secondary substrate of wafer scale while on the component.
The exemplary embodiment of patent document provides a kind of light-emitting device, and which can be by guaranteeing weldering as broadly as possible The width of disk and improve thermoradiation efficiency the short circuit for preventing between pad.
The exemplary embodiment of patent document provides a kind of light-emitting device, and which can be by preventing metallic element in weldering Spread in cream and be directly installed on printed circuit board (PCB) or the like using soldering paste.
The exemplary embodiment of patent document provides a kind of light-emitting device, and which can be by steady with excellent machinery The qualitative possibility to reduce failure.
Technical scheme
According to the one side of patent document, there is provided a kind of light-emitting device, which includes：Ray structure, the light-emitting junction Structure includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and is arranged on the first conductive-type semiconductor layer and second leading Active layer between electric type semiconductor layer；The first contact electrode on ray structure or above and the second contact electrode are arranged on, Its respectively with the first and second conductive-type semiconductor layer Ohmic contacts；Insulating barrier, the insulating barrier contact electrode by first and second It is insulated from each other and at least in part cover first and second contact electrodes；Stress buffer on the insulating layer or above is set Layer；It is arranged on bulk electrode (bulk electrode) on ray structure and stress-buffer layer or above and the second body electricity Pole, the first and second bodies electrode are electrically connected to the first and second contact electrodes；And insulated support, which covers first and the The side surface of disome electrode and the upper surface of the first and second body electrodes is exposed at least in part, wherein bulk electrode includes Include from the second body electrode from the protuberance that the side surface of bulk electrode is prominent to the second body electrode, and the second body electrode The recess of side surface depression.
In some embodiments, protuberance can be engaged with recess.
In some embodiments, surface of the protuberance from the side surface of bulk electrode to protuberance has the width of change Degree.
In some embodiments, surface of the recess from the side surface of the second body electrode to recess has the width of change.
In some embodiments, bulk electrode includes one or more Additional bumps and the second body electrode includes One or more additional wells, and one or more Additional bumps and one or more additional wells engagements.
In some embodiments, insulating barrier can include the first and second insulating barriers, and the first insulating barrier can be partly Cover second to contact electrode and contact the first of electrode including the first conductive-type semiconductor layer and second is respectively partially exposed Opening portion and the second opening portion, the first contact electrode can partly cover the first insulating barrier, and the second insulating barrier can be with portion Point ground covers first and contacts electrode and the 3rd opening portions and the of electrodes are contacted including respectively partially exposure first and second Four opening portions.
In some embodiments, light-emitting device may further include and be arranged on the second contact electrode and the second body electrode Between connection electrode, the wherein connection electrode includes the material identical material that electrode is contacted with first.
In some embodiments, the part of the first insulating barrier can between first contact electrode and second contact electrode it Between.
In some embodiments, light-emitting device may further include the company being arranged on the second contact electrode or above Receiving electrode, wherein insulating barrier include the first opening portion and the second opening portion for exposing the first contact electrode and connection electrode respectively.
In some embodiments, ray structure is set to partially exposed first conductive-type semiconductor layer, and first Contact electrode can be arranged on above exposed first conductive-type semiconductor layer.
In some embodiments, ray structure exposes the multiple of the first conductive-type semiconductor layer with being set to forming part Hole, and the first contact electrode can be electrically connected to the first conductive-type semiconductor layer by the plurality of hole.
In some embodiments, light-emitting device may further include be separately positioned on the first and second body electrodes or The first and second pad electrodes above, wherein insulated support cover the first and second body electrodes upper surface part and Surround the side surface of the first and second pad electrodes.
In some embodiments, the first pad electrode can be not provided with over the projections or above.
In some embodiments, the first and second pad electrodes can have substantially the same surface area.
In some embodiments, light-emitting device may further include and be arranged on the lower surface of ray structure or above Wavelength conversion unit.
In some embodiments, the first and second body electrodes are spaced apart with substantially constant distance.
In some embodiments, bulk electrode is with the area bigger than the area of the second body electrode.
In some embodiments, bulk electrode can include from protuberance the Additional bumps for projecting, and second Body electrode can include the additional well from recess depression.
In some embodiments, Additional bumps are Chong Die with the core of light-emitting device in vertical direction.
In some embodiments, during Additional bumps are with polygon, the circular or ellipse with inscribed circle is included At least a portion, the inscribed circle has the center positioned at the central part office of light-emitting device and about 50 μm or bigger straight Footpath.
According to the other side of patent document, there is provided a kind of light-emitting device, which includes：Ray structure, this lights Structure includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and is arranged on the first conductive-type semiconductor layer and second Active layer between conductive-type semiconductor layer；It is arranged on the first contact electrode on ray structure or above and the second contact electricity Pole, the first and second contact electrode and the first and second conductive-type semiconductor layer Ohmic contacts；Insulating barrier, the insulating barrier is by One and second contact electrode it is insulated from each other and at least in part cover first and second contact electrodes；Be arranged on ray structure and Bulk electrode on insulating barrier or above and the second body electrode, the first and second bodies electrode are electrically connected to first and second and connect Touched electrode；And insulated support, which covers the side surface of the first and second body electrodes and exposes the first He at least in part The upper surface of the second body electrode, wherein the first and second body electrodes are arranged as facing with each other and are formed along the first and second bodies The dummy line of the interval region between electrode, the dummy line have sweep, and bulk electrode with than the second body electricity The big area of the area of pole.
In some embodiments, the beginning and end of dummy line may be disposed on the same line or above.
According to the another aspect of patent document, there is provided a kind of light-emitting device, which includes：Ray structure, this lights Structure includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and is arranged on the first conductive-type semiconductor layer and second Active layer between conductive-type semiconductor layer；It is arranged on the first contact electrode on ray structure or above and the second contact electricity Pole, the first and second contact electrode and the first and second conductive-type semiconductor layer Ohmic contacts；Insulating barrier, the insulating barrier is by One and second contact electrode it is insulated from each other and at least in part cover first and second contact electrodes；Arrange on the insulating layer or Bulk electrode above and the second body electrode, the first and second bodies electrode are respectively electrically connected to the first and second contacts electricity Pole；And insulated support, which covers the side surface of the first and second body electrodes and exposes first and second at least in part The upper surface of body electrode, wherein bulk electrode include from the side surface of bulk electrode to the second body electrode it is prominent first dash forward The second protuberance for going out portion and projecting from the first protuberance, the second body electrode include from the side surface of the second body electrode for being recessed One recess and the second recess being further recessed from the first recess, and the second protuberance shape is designed as including polygon, circle The ellipse of the inscribed circle at shape or the center with the core possessed positioned at light-emitting device it is at least part of.
Description of the drawings
Fig. 1 is the cross-sectional view of the light-emitting device according to correlation technique.
Fig. 2 (a) to Figure 13 (b) is the plan and cross-sectional view of the exemplary light-emitting device according to some embodiments.
Figure 14 (a) is the cross-sectional view of the exemplary light-emitting device according to some embodiments.
Figure 14 (b) is the perspective view of the exemplary light emitting device package according to some embodiments.
Figure 15 (a) to Figure 15 (f) is the cross-sectional view and plan of the exemplary light-emitting device according to some embodiments.
Figure 16 and Figure 17 is namely for description according to the plan of the exemplary light-emitting device of some embodiments and transversal Face figure.
Figure 18 (a) to Figure 18 (d) is the plan of the exemplary light-emitting device according to some embodiments.
Figure 19 and Figure 20 are the plan and cross-sectional view of the exemplary light-emitting device according to some embodiments respectively.
Figure 21 and Figure 22 is namely for description according to the plan of the exemplary light-emitting device of some embodiments and transversal Face figure.
Figure 23 (a), Figure 23 (b) and Figure 24 are shown for description according to the flat of the exemplary light-emitting device of some embodiments Face figure and cross-sectional view.
Figure 25 (a) to Figure 40 (b) is the plan and horizontal stroke for description according to the exemplary light-emitting device of some embodiments Sectional view.
Figure 41 shows the exemplary luminaire of the light-emitting device using some embodiments according to patent document Decomposition diagram.
Figure 42 shows the exemplary display devices of the light-emitting device using some embodiments according to patent document Cross-sectional view.
Figure 43 shows the exemplary display devices of the light-emitting device using some embodiments according to patent document Cross-sectional view.
Figure 44 shows the transversal of the exemplary headlight of the light-emitting device using some embodiments according to patent document Face figure.
Specific embodiment
Hereinafter, refer to the attached drawing is described in detail to the exemplary embodiment of disclosed technology.Will be presented below Exemplary embodiment the understanding for being beneficial to the illustrative embodiments to disclosed technology will be provided by way of example. Therefore, disclosed technology is not limited to the exemplary embodiment being described below, and can be to implement in other forms.This Outward, in the accompanying drawings, the width of part, length, thickness etc. can expand for convenience of description.Moreover, it will be appreciated that when one Part be referred to as another part " on ", " above " or when " top ", a part can be with " directly in another part On ", " directly on another part " or " directly above another part ", or can have other parts between them Between.In whole this specification, identical reference represents identical part.
Fig. 1 shows the flip chip type light-emitting device according to correlation technique.As shown in Figure 1 according to correlation technique Flip chip type light-emitting device 100 can include：Growth substrates 11, the first conductive-type semiconductor layer 13, active layer 15, second Conductive-type semiconductor layer 17, first electrode 19, second electrode 20, the first pad 30a, the second pad 30b and insulating barrier 31.It is luminous Unit can be formed to include the first conductive-type semiconductor layer 13, active layer 15 and the second conductive-type semiconductor layer 17.First Conductive-type semiconductor layer 13 and the second conductive-type semiconductor layer 17 can be respectively electrically connected to the first pad 30a and the second pad 30b。
In the flip chip type light-emitting device according to correlation technique, growth substrates 11 and the first conductive-type semiconductor layer 13 Separate, hence in so that the radiation efficiency and light efficiency of light emitting diode can be improved.
However, in the case where growth substrates 11 are removed, the first pad 30a of flip chip type light-emitting device and second Pad 30b is separated each other, and there is no the supporting member for supporting semiconductor layer 13,15 and 17.Thus, semiconductor layer 13, 15 and 17 is frangible.
In the related, secondary substrate is attached to into semiconductor layer and subsequently uses chemical etch technique or laser lift-off It is well known that technology carrys out technology that is thinning or separating growth substrates.However, as secondary substrate should be individually attached to half Conductor layer, increased manufacturing cost.It is therefore desirable to be able in the case of thinning or separation growth substrates prevent semiconductor layer from breaking The technology split.
Meanwhile, in flip chip type light-emitting device, the first projection 30a and the second projection 30b are used as heat radiation Path.Thereby it is ensured that the width of the first projection 30a and the second projection 30b is conducive to greatly entering the heat of light-emitting device as far as possible Row radiation.However, in flip chip type light-emitting device, as electrode 19, the first projection are formed by removing presumptive area 30a and the second projection 30b are set to be spaced apart from each other with preset distance.Additionally, the width of the first projection 30a and the second projection 30b Degree is defined as constant to prevent the short circuit between projection, short circuit to be unfavorable for that the heat to light-emitting device is radiated.
Meanwhile, the system on printed circuit board (PCB) or the like is adhered directly to using soldering paste by allowing the pad of light-emitting device The technology for making light-emitting device module has been obtained for research recently.For example, can be by light-emitting device chip to be mounted directly to Do not encapsulate the light-emitting device chip to manufacture light-emitting device module on printed circuit board (PCB), or can be sent out by manufacturing wafer scale Electro-optical device encapsulates and wafer scale light emitting device package is to be mounted directly on printed circuit board (PCB) to manufacture light-emitting device module.With regard to this For a little light-emitting device modules, as the metallic element of pad directly contact soldering paste, the tin (Sn) in soldering paste etc. is expanded It is dispersed in light-emitting device so that electrical short may be produced in light-emitting device and cause diode to damage.
Additionally, increasing for the demand of wafer-level package, in wafer-level package, eliminate and light emitting device package exists Individually the process and light-emitting device in housing or the like is used as encapsulation in itself to minimize and increase light-emitting device The output of light-emitting device.Especially, the electrode of flip chip type light-emitting device can perform similarly to the function of the lead for encapsulating, So that flip chip type light-emitting device can also be efficiently used in wafer-level package.
In the case where the device with wafer-level package form is used as high output light emitting equipment, high-density current is applied It is added to wafer-level package.When high-density current is applied, the heat produced by luminescence chip is also increased.The heat is in light-emitting device Produce.
Especially, when due to stress causes rupture in-between the electrodes when, light-emitting device is likely to break down, and this will Cause the damage of light-emitting device.Therefore, the light-emitting device used in high output light emitting equipment needs high-heating radiation efficiency and excellent Different mechanical stability.
Fig. 2 to Figure 13 (b) is according to same luminous of the exemplary light-emitting device of some embodiments and manufacture for description The plan and cross-sectional view of the illustrative methods of device.
Fig. 2 (a) is the plan of growth substrates, and the second contact electrode is formed on epitaxial layer thereon, and Fig. 2 (b) It is the cross-sectional view intercepted along the line A-A of Fig. 2 (a).
With reference to Fig. 2, growth substrates 110 are prepared first, and ray structure 120 is formed in growth substrates 110.Growth Substrate 110 can be any substrate that ray structure 120 can grow thereon, and can include, such as Sapphire Substrate, Silicon substrate, silicon carbide substrates, spinel substrate and nitride or the like.For example, in the present example embodiment, grow Substrate 110 can be Sapphire Substrate.
Meanwhile, there is heterogeneous character in growth substrates 110 and by the ray structure 120 grown in growth substrates 110 In the case of, for example, include the semiconductor of nitride base in ray structure 120 and growth substrates 110 are such as Sapphire Substrate Dissimilar materials substrate in the case of, cushion (not shown) can be further formed in growth substrates 110.
Additionally, growth substrates 110 can have various growing surfaces, for example, the such as polar growth of c surfaces ((0001)) Surface, such as m surfaces ((1-100)) or the nonpolar growing surface or the such as semi-polarity of ((20-21)) of surface ((11-20)) Growing surface.Additionally, growing surface 110 can be patterned substrate.
First conductive-type semiconductor layer 121, active layer 123 and the second conductive-type semiconductor layer 125 are grown in growth substrates On 110.
First conductive-type semiconductor layer 121 can include, such as semiconductor layer of N-shaped gallium nitride base, and second conductive Type semiconductor layer 125 can include the semiconductor layer of p-type gallium nitride base.Additionally, active layer 123 can have single quantum Or multi-quantum pit structure and including well layer and barrier layer.Additionally, well layer can be included according to answering that the wavelength of institute's light requirement is selected Close element, such as InGaN (InGaN).
First conductive-type semiconductor layer 121 and the second conductive-type semiconductor layer 125 can be with different conduction-types Semiconductor layer, and semiconductor layer 121,123 and 125 can by it is various deposition and growing method be formed, it is organic including metal Chemical vapour deposition technique (MOCVD), molecular beam epitaxy (MBE) or hydride vapour phase epitaxy method (HVPE) etc..
Hereinafter, by the description of the widely-known technique being omitted for for semiconductor layer.
Subsequently second can be formed using lift-off technology and contact electrode 130.Second contact electrode 130 can include reflecting layer 131 and coating 133.Additionally, the second contact electrode 130 may further include be arranged on reflecting layer 131 and coating 133 it Between stress relaxation layer (not shown).Stress relaxation layer is made between the thermal coefficient of expansion due to reflecting layer 131 and coating 133 The stress relaxation that difference is produced.
Reflecting layer 131 for example can be formed by Ni/Ag/Ni/Au or including Ni/Ag/Ni/Au, and can be with aboutIntegral thickness.Reflecting layer 131 can be formed as with following shape, wherein its side surface be it is inclined, for example, its Bottom is relatively bigger.Reflecting layer 131 can be formed using electron beam evaporation.
Meanwhile, coating 133 covers the upper surface in reflecting layer 131 and side surface to protect reflecting layer 131.Coating 133 Can perform using sputtering technology or using while growth substrates 110 turn growth substrates 110 in inclined state backspin Vacuum-deposited electron beam evaporation (for example, loantary electron beam evaporation) is formed.Coating 133 can include Ni, Pt, Ti or Cr, And formed by the Ni/Ti of Ni/Pt or about five pair of such as about five pairs of deposition.In some embodiments, cover Layer 133 can include TiW, W or Mo.
Stress relaxation layer can be differently selected according to the metal material in reflecting layer 131 and coating 133.For example, Reflecting layer 131 be made up of Al or Al alloys be made up of W, TiW or Mo including Al or Al alloys and coating 133 or including In the case of W, TiW or Mo, stress relaxation layer can be Ag, Cu, Ni, Pt, Ti, Rh, Pd or Cr individual layer or Cu, Ni, Pt, The composite bed of Ti, Rh, Pd or Au.Additionally, being made up of Al or Al alloys or including Al or Al alloys and covering in reflecting layer 131 Layer 32 by Cr, Pt, Rh, Pd or Ni make or including Cr, Pt, Rh, Pd or Ni in the case of, stress relaxation layer can be Ag or Cu Individual layer or Ni, Au, Cu or Ag composite bed.
Additionally, the second contact electrode 130 may further include anti-oxidation metal portion (not shown).Anti-oxidation metal portion can To cover coating 133, including Au to prevent the oxidation of coating 133, and for example can be formed by Au/Ni or Au/Ti or Including Au/Ni or Au/Ti.In some embodiments, Ti is preferred, this is because such as SiO2The adhesion of oxide layer be Good.Anti-oxidation metal portion can also use sputtering technology or using the rotation under inclined state in growth substrates 110 Vacuum-deposited electron beam evaporation (for example, loantary electron beam evaporation) formation is performed while growth substrates 110.
After the second contact electrode 130 is formed, photoresistance pattern is removed, so that the second contact electrode 130 is formed in the On two conductive semiconductor layer 125, as shown in Fig. 2 (a) or Fig. 2 (b).
Fig. 2 (a) and Fig. 2 (b) show the regional area of the chip before chip is divided.The regional area of chip can be with It is or including single device region, wherein will be manufactured according to the light-emitting device of patent document.In this case, wherein The region that the second contact electrode 130 is not formed in two distal ends of growth substrates 110 and ray structure 120 could be for drawing Divide the predetermined division region of chip.Except non-individual is described, be otherwise described below for describing this exemplary enforcement The figure of example could be for describing the figure in single device region.
Fig. 3 (a) is the plan of growth substrates, is formed on table top, and Fig. 3 (b) is intercepted along Fig. 3 (a) lines A-A Cross-sectional view.
With reference to Fig. 3, table top M is formed on the first conductive-type semiconductor layer 121.Table top M includes that active layer 123 and second is led Electric type semiconductor layer 125.Active layer 123 be arranged on the first conductive-type semiconductor layer 121 and the second conductive-type semiconductor layer 125 it Between.Meanwhile, the second contact electrode 130 is arranged on table top M.
Table top M can be by patterning and to be formed the second conductive-type semiconductor layer 125 and active layer 123, so that exposure First conductive-type semiconductor layer 121.The side surface of table top M can be formed as inclined using such as photoresistance technique of backflow.Table top M The profile of inclined side surfaces can improve the extraction efficiency to the light produced in active layer 123.
Multiple table top M can have longer shape, and wherein they are extended parallel to each other in a side surface direction, such as Shown.Further, since there are multiple table top M, pelvic part region B can be formed between table top M.Pelvic part region B can be The region that limited by the table top for being arranged on its both sides and the first conductive-type semiconductor layer 121 is exposed.
Meanwhile, the second contact electrode 130 covers most of upper surface of each table top M, and with the plane with table top M The essentially identical shape of shape.The whole area of the upper surface of the second contact electrode 130 can be the upper surface of growth substrates 110 Area or the first conductive-type semiconductor layer 121 lower surface area 70%, 80%, 90% or more.
Fig. 4 (a) is the plan of growth substrates, and the first contact electrode is arranged in pelvic part region thereon, and Fig. 4 B () is the cross-sectional view intercepted along the line A-A of Fig. 4 (a).
With reference to Fig. 4 (a) and Fig. 4 (b), the first contact electrode 140 can be formed in pelvic part region, the pelvic part region be Region between table top M.First can be formed using deposition and lift-off technology and contact electrode 140.First contact electrode 140 can be with Including metal, such as at least one in Ni, Pt, Pd, Rh, W, Ti, Cr, Al, Ag or Au.First contact electrode 140 can be with First conductive-type semiconductor layer, 121 Ohmic contact, and can include being made up of the metal with high reflectance or including having The reflecting layer of the metal of high reflectance, similar to the described above second contact electrode 130.
First contact electrode 140 can have longer shape, wherein they in a side surface direction in parallel with each other Extend, as shown.Additionally, the first contact electrode 140 can have following shape, i.e., wherein they prolong in parallel with each other Stretch, while being spaced apart with the second contact electrode 130 at a predetermined interval.
Fig. 5 (a) is the plan of growth substrates, and the first insulating barrier is formed in the second contact electrode and the first contact thereon On electrode, and Fig. 5 (b) is the cross-sectional view intercepted along the line A-A of Fig. 5 (a).
Reference Fig. 5, the second contact electrode 130 and the first contact electrode 140 are covered by the first insulating barrier 150.Subsequently, remove The first insulating barrier of part 150 is exposing lower area.First insulating barrier 150 can include that exposure second contacts the portion of electrode 130 The multiple first open area 150a and exposure first that divide contact multiple second open area 150b of the part of electrode 140.It is many Individual first open area 150a could be arranged to be spaced apart from each other with preset distance respectively.Multiple second open area 150b can be with It is set to be spaced apart from each other with preset distance respectively.Each in multiple first open area 150a and multiple second open regions Each in the 150b of domain could be arranged to be spaced apart from each other with preset distance.Above-mentioned preset distance can be according to basis The current spread of the light-emitting device of the exemplary embodiment of patent document and determine.Additionally, the first open area 150a can be with It is oriented to towards the same end of table top bias.
According to the second contact electrode 130 and the being arranged on below the first open area 150a and the second open area 150b One contact electrode 140 area, can to each in the first open area 150a and the second open area 150b in it is every The predetermined area of one carries out open and exposed.First insulating barrier 150 can be formed as having with uniform thickness or be formed as Different-thickness, this depends on the region set by it wherein.
First insulating barrier 150 can include insulating materials and can be by being formed with lower floor or including with lower floor, such as SiO2Oxide skin(coating) or the like, SiNxNitride layer or the like or MgF2Insulating barrier.Further, the first insulation Layer 150 can include multilayer, and including distributed Bragg reflector, the material with different refractivity in the reflector It is alternately stacked.For example, by SiO2/TiO2Or SiO2/Nb2O5Or the like formed or including SiO2/TiO2Or SiO2/Nb2O5Or The layer of analog is stacked, so that the insulative reflective layer with high reflectance can be formed.
The first insulating barrier 150 can be formed using technology of such as chemical vapor deposition (CVD) or the like, and Then its patterning is made to form the first open area 150a and the second open area 150b.
Fig. 6 (a) is the plan of the first insulating barrier, is formed on pad metal layer, and Fig. 6 (b) is along Fig. 6 (a) Line A-A intercept cross-sectional view.
With reference to Fig. 6 (a), multiple pad metal layers 160 are formed on the first insulating barrier 150.Pad metal layer 160 can set Put the first open area 150a and second that the part of the part of electrode 130 and the first contact electrode 140 is contacted in exposure second In the 150b of open area.Pad metal layer 160 is formed in the substantially whole area in addition to the interval between which of growth substrates 110 Above domain.Therefore, electric current may be easy to be dispersed in whole pad metal layer 160.Pad metal layer 160 can be by the first opening Region 150a and the second open area 150b contact electrode 130 and the first contact 140 Ohmic contact of electrode with second.
Pad metal layer 160 can include adhesive layer, metallic reflector, diffusion trapping layer and inculating crystal layer.Adhesive layer can be with Including Ti, Cr, Ni or Ta or its combination, and can be used to improve between pad metal layer 160 and the first insulating barrier 150 Bonding.Metallic reflector can include Al or Ag or its combination, and reflect incident light to pad metal layer 160 to improve The reflectivity of light-emitting device.Diffusion trapping layer can include Cr, Ti, Ni, Mo, TiW or W or its combination, and prevent metal raw The diffusion of son is protecting metallic reflector.Inculating crystal layer (is not shown to deposit and electroplate the body electrode formed in subsequent technique Go out) and the layer of formation, which can be formed by Au or Cu or including Au or Cu.Therefore, inculating crystal layer can be arranged on pad metal layer 160 uppermost part.Pad metal layer 160 can be formed by depositing operation or electroplating technology.Pad metal layer 160 can To be formed with uniform thickness or be formed with different-thickness, this depends on the region set by it wherein.Pad metal layer 160 Whole area can be the area of the lower surface of the area or the first conductive-type semiconductor layer 121 of the upper surface of growth substrates 110 70%, 80%, 90% or more.
Fig. 7 is before the light-emitting device of the exemplary embodiment according to patent document is divided into single diode Chip regional area plan.
With reference to Fig. 7, pad metal layer 160 and the formation candy strip of the first insulating barrier 150.In the figure 7, the first insulating barrier 150 are exposed between the pad metal layer 160 being set parallel to each other.Herein, dotted line a can be represented for chip is divided For the predetermined division line of single diode.Predetermined division line can be formed in the predetermined division region with reference to Fig. 2 descriptions.
Pad metal layer 160 can be divided into first and second metal levels along dotted line a by subsequent technique, but in chip In it is interconnected amongst one another so that electric current can flow wherein in electroplating technology.
Fig. 8 (a) and Fig. 8 (b) are the plans of pad metal layer, are formed on insulated support, and Fig. 9 (a) is along Fig. 8 A cross-sectional view that the line A-A of () and Fig. 8 (b) is intercepted, and Fig. 9 (b) is the horizontal stroke intercepted along the line B-B of Fig. 8 (a) and Fig. 8 (b) Sectional view.
Reference Fig. 8 (a), Fig. 8 (b) and Fig. 9, insulated support 170 and body electrode 180 are arranged in pad metal layer 160. The body electrode 180 that insulated support 170 is formed in being included in its interior zone, and by coupling region 175,175a and 175b It is coupled to body electrode 180.Furthermore, it is possible to further include to surround the supporting part 185 of insulated support 170.
Spacing distance between body electrode 175 can be 30 μm to 300 μm.Therefore, because body electrode 175 can with than The relatively broad width of correlation technique is formed, and the radiation efficiency of light-emitting device can be improved.
Insulated support 170 is included in its interior zone and is formed and enclosure body electrode 180 couples pattern, and body electricity Pole 180 also include being formed in edge and be coupled to insulated support couple pattern couple pattern.Insulated support 170 The pattern that couples for coupling pattern and body electrode 180 is coupled to each other, and couples region 175,175a and 175b so as to be formed.Couple region 175 and 175a can be formed with inverted trapezoidal saw tooth pattern, as shown.Although additionally, not shown, except inverted trapezoidal coxcomb plot Outside case, couple region 175 and 175a can be formed with triangular sawtooth pattern, trapezoidal saw tooth pattern, rectangular saw-tooth pattern etc..
When will Fig. 8 (a) and Fig. 8 (b) it is compared to each other when, Fig. 8 (a) couples region 175a and second including first and couples area Domain 175b.First couples region 175a couples region 175 corresponding to Fig. 8 (a).Second couples region 175b is disposed therein body In the region facing with each other of electrode 180.Second couples region 175b includes region 175a is coupled compared to first deeper deeply Pattern of the degree into body electrode 180 facing with each other.In this case, it is arranged on second and couples the pad below the 175b of region Each in metal level 160 is arranged to not couple region 175b with second Chong Die.That is, with regard to the exemplary of Fig. 8 (b) For embodiment, second couples region 175b is arranged on the first insulating barrier 150 to prevent from coupling region 175b due to second The short circuit produced between body electrode 180.In the exemplary embodiment of Fig. 8 (b), in body electrode facing with each other 180 and set The power that couples put between the insulated support 170 between body electrode 180 may be enhanced.
Referring again to Fig. 8 (b), body electrode 180 can be respectively included in convex portion therein and recess by which and connect each other Close.Convex portion and recess can be arranged on the surface facing with each other of body electrode 180 thereon.Convex portion includes the width of wherein convex portion The part broadened on projected direction, although and having been illustrated with the discontinuous feelings for broadening of width in the present example embodiment Condition, patent document is not limited to this and other embodiment is also possible.Therefore, the width of convex portion can be projecting Continuously broaden on direction.In the present example embodiment, in the case of the width of convex portion discontinuously broadens, the width of convex portion Can broaden 1.5 to 2 times.
Length L of Fig. 8 (b) represents length of the convex portion on projected direction.The whole area of convex portion is whole with body electrode 180 The ratio of individual area can be calculated by length L, and in the present example embodiment, the whole area of convex portion can be body electricity The 1/4 or bigger of the whole area of pole 180.That is, due to wherein according to the body electrode 180 of this exemplary embodiment each other The ratio of the area for coupling is significantly greater than the ratio in Fig. 8 (a), it can be ensured that stronger between body electrode 180 couples power. Meanwhile, insulated support 170 and body electrode 180 are coupled to each other in region 175 is coupled, so that can be formed being included in According to the substrate in the light-emitting device of patent document.
Insulated support 170 couple pattern and body electrode 180 couple in pattern each can include it is multiple recessed Portion and multiple convex portions, and insulated support 170 is engaged with each other in region 175 is coupled as serrated wheel with body electrode 180, As shown.
In patent document, as insulated support 170 is engaged with each other as serrated wheel with body electrode 180, with which In do not exist and couple the situation of pattern and compare, body electrode 180 and insulated support 170 can be with the same of broader surface area When contact with each other.Therefore, because can prevent due to the different heat expansion coefficient between insulated support 170 and body electrode 180 And the reduction of the caused power of coupling, the reliability of light-emitting device can be improved.
The convex portion for coupling pattern of insulated support 170 located adjacent one another and the convex portion for coupling pattern of body electrode 180 can With point symmetry each other.That is, when the convex portion of insulated support 170 and the convex portion of body electrode 180 surround between convex portion one When individual point rotates 180 °, they can overlap each other.
Additionally, for the power that couples between reinforced insulation support member 170 and body electrode 180, insulated support 170 is coupled Each in the protuberance for coupling pattern of the protuberance and body electrode 180 of pattern can include wherein its width in protrusion side The region for broadening upwards.Further, the width of each in protuberance can be on projected direction continuously or discontinuously Broaden.The shape of each in the convex portion for coupling pattern of insulated support 170 and the convex portion for coupling pattern of body electrode 180 Formula may be used as the form of each in protuberance and without restriction, as long as insulated support 170 and body in the form Electrode 180 mechanically can be coupled to each other.
Meanwhile, insulated support 170 is surrounded by supporting part 185.By supporting part 185, light-emitting device can be strengthened and added Structural stability between the duration, and warpage of the ray structure 120 after growth substrates 110 are removed, failure etc. can be prevented Deng.
Insulated support 170 can include light-sensitive polyimide, Su-8, the photoresist for plating, Parylene, ring At least one of oxygen moulding compound (EMC) or ceramic powder.Insulated support 170 and body electrode 180 can have 20 μm to 200 μm Height.Additionally, the upper surface of the upper surface of insulated support 170 and body electrode 180 could be arranged to flush against one another.
Due to by forming body electrode 180 and insulated support 170 there is provided the substrate according to patent document, if must If wanting, substrate can have various thickness.Therefore, because can be substantially similar to according to the thickness of the substrate of patent document According to the thickness of the metal substrate of correlation technique, basis can be applied similarly to according to the light-emitting device of patent document manufacture The application of correlation technique.
In order to body electrode 180 is formed in the interior zone of insulated support 170, covered by coating and hardening formation first The insulated support 170 of lid pad metal layer 160 and the first insulating barrier 150.Subsequently, the part of insulated support 170, for example, The part of the interior zone of insulated support 170, is removed to form the inside opening area of the part of exposure pad metal layer 160 Domain.When inner open area is formed, insulated support 170 can be patterned by exposed and developed technique, and is passed through Patterning can be formed in the interior zone of insulated support 170 and couple pattern.
Next, forming the body electrode 180 in embedment inner open area.Body electrode 180 can by such as sedimentation, The method of galvanoplastic etc. is formed.Body electrode 180 is formed to insert in inner open area with contact pad metal level 160, with Proper electrode 180 and ray structure 120 is allow to be electrically connected to each other.
As the insulated support 170 being included in the light-emitting device according to patent document is in 180 formation of body electrode It is front including pattern is coupled, can have by the body electrode 180 that the method for galvanoplastic etc. is formed in inner open area With insulated support 170 couple that pattern engaged naturally couple pattern.
Body electrode 180 can include conductive layer, barrier layer and antioxidation coating successively.Conductive layer, which is for dissufion current Layer, Cu or Ag or the like can be included.Barrier layer, which is that the metallic atom for preventing from being included in body electrode 180 expands Scattered layer, can include Ni or Pd or the like.Antioxidation coating, which is the layer for preventing the oxidation of body electrode 180, Ke Yiyou Au or the like is formed or including Au or the like, and can be replaced by the oxidation sacrifice layer including Ag and/or Al.It is anti-oxidation Layer or oxidation sacrifice layer can be arranged on an upper, and body electrode 180 is exposed to outside on this upper surface.
The whole area of the lower surface of body electrode 180 can be the area of the upper surface of the second conductive-type semiconductor layer 70%th, 80% or 90% or more.In the present example embodiment, as body electrode is formed with wide area, light The radiation efficiency of device is high.
Figure 10 be the exemplary embodiment according to patent document light-emitting device be divided into single diode it The plan of the regional area of front chip.
With reference to Figure 10, supporting part 185 is could be arranged to corresponding to predetermined division line as shown in Figure 17.Body electrode 180 Can be formed according to the position of the pad metal layer 160 for arranging thereunder and area.Body electrode 180 and supporting part 185 can To be formed by identical technique.In some embodiments, insulated support 170 is formed in pad metal layer 160, and The regional area of insulated support 170 is patterned as the part for exposing pad metal layer 160 and the first insulating barrier 150.Pattern It can be the predetermined division region corresponding to predetermined division line to change region.Use is coated with by the region of Patternized technique opening Imbed in the material for forming above-mentioned body electrode 180 or by electroplating technology, and make material hardening, be enable to Form body electrode 180 and supporting part 185.Therefore, body electrode 180 and supporting part 185 can be using identical materials with identical Technique is formed.
Figure 11 is to be shown in remove growth substrates 110 afterwards so that flat in the sensing of the first conductive-type semiconductor layer 121 Face figure.Therefore, in the present example embodiment, insulated support 170 and body electrode 180 are positioned under ray structure 120 Face.
Figure 12 (a) be in growth substrates by the cross-sectional view of the epitaxial layer of detached state, the epitaxial layer have formed Roughness in its surface.Figure 12 (b) and Figure 12 (c) are the cross sections of the ray structure for being formed on the second insulating barrier Figure.
Figure 12 (a) is the cross-sectional view that the line A-A that illustrates along Figure 11 is intercepted, and Figure 12 (b) is to figure 11 illustrates Exemplary embodiment on the cross-sectional view that A-A along the line is intercepted after the second insulating barrier is set.Figure 12 (c) is to figure 11 illustrates Exemplary embodiment on the cross-sectional view that B-B along the line is intercepted after the second insulating barrier is set.
Next, with reference to Figure 12 (a), growth substrates 110 are separated with ray structure 120.Growth substrates 110 can pass through all The such as method such as laser lift-off, chemical stripping method, stress stripping method or hot stripping method is separated with ray structure 120.Due to removing Growth substrates 110, can improve the radiation efficiency and light efficiency of light-emitting device according to patent document.
180 exposed surface of body electrode can be by chemically-mechanicapolish polishing planarization.In the separation due to growth substrates 110 And roughness can be formed on the surface of exposed first conductive-type semiconductor layer 121.Additionally, before roughness is formed, can Chemically or physically to remove the residue on the surface of the first conductive-type semiconductor layer 121, and can lead from first The surface of electric type semiconductor layer 121 removes predetermined thickness.In the technique for separating growth substrates 110, partly lead in the first conductivity type Body layer 121 may nearby produce and damage or destroy.Therefore, the surface of the first conductive-type semiconductor layer 121 is removed predetermined thickness, So that whole first conductive-type semiconductor layer 121 can realize good average crystalline shape.
Being formed for roughness can be strengthened by using the wet etching of KOH and/or NaOH solution or sulphur phosphoric acid, by light Chemical (PEC) etching is formed or passes through other wet etchings, dry etching or electrolysis mode.In the first conductive-type semiconductor layer Roughness is formed on 121 surface, so as to improve light extraction efficiency.
According to the various embodiments of patent document, due to including the insulated support 170 for coupling mechanically to each other and body electricity The substrate of pole 180 is used as support substrate, even if growth substrates 110 are separated, still may insure the structural stability of light-emitting device.
Subsequently, with reference to Figure 12 (b) and 12 (c), ray structure 120 can pattern to form ray structure 120 and make a reservation for Zoning 300.Can be patterned using dry etching or the like.Predetermined division region 300 is formed so as to be sent out Photo structure 120 can be divided into one or more light-emitting devices.
Subsequently, the second insulating barrier 190 can be formed on ray structure 120 and exposed supporting part 185.It is not exhausted to second Edge layer 190 is defined, if its be transparent insulating layer and its can be formed by depositing operation or similar technique.The Two insulating barriers 190 can protect ray structure 120 from external environment influence.
Subsequently, enter to be about to the work that chip is divided into single device according to the predetermined division region 300 formed by patterning Skill.The technique can include the Cutting Process of the cutter using such as diamond blade.Can be removed by Cutting Process and be set Put the supporting part 185 in predetermined division region 300.
In some embodiments, not fully remove supporting part 185 and at least part of of supporting part 185 can be retained. In this case, the part of insulated support 170 can be arranged between supporting part 185 and pad metal layer 160, so that The electrical short produced due to the contact between supporting part 185 and pad metal layer 160 must be prevented from.
Therefore, define lighting for the exemplary embodiment according to the patent document illustrated in Figure 13 (a) and Figure 13 (b) Device.The cross-sectional view of Figure 13 (a) is the cross section that light-emitting device is observed with the cross-sectional view identical direction with Figure 12 (b) Scheme, and the cross-sectional view of Figure 13 (b) is the cross section that light-emitting device is observed with the cross-sectional view identical direction with Figure 12 (c) Figure.
Figure 14 (a) is the cross section for description according to the exemplary light-emitting device of some embodiments of patent document Figure.
With reference to Figure 14 (a), light-emitting device 400 is the luminous of the exemplary embodiment of patent document as described above Device, and be installed on time installation substrate 500.
It is secondary that the electrode pattern 520 that substrate 500 includes substrate 530 and is arranged on substrate 530 is installed.Substrate 530 can be Any one in BeO, SiC, Si, Ge, SiGe or AlN with excellent heat conductivity or ceramic substrate.However, substrate 530 is not limited It is also possible in this and other embodiment, and substrate can include the metal with high-termal conductivity and excellent electric conductivity The substrate of material and the insulating materials with high-termal conductivity.
When electrode pattern 520 is formed as with shape corresponding to 180 shape of body electrode, body electrode 180 respectively in connection with To electrode pattern 520.Herein, it is possible to use high temperature or ultrasonic wave use both high temperature and ultrasonic wave by body electrode 180 It is bound to electrode pattern 520.It is alternatively possible to body electrode 180 is bound to electrode pattern 520 using soldering paste.
Body electrode 180 and electrode pattern 520 can by calmodulin binding domain CaM 510 take kind described above associated methods that This combines.
Figure 14 (b) is the perspective view of the exemplary light emitting device package of some embodiments according to patent document.
With reference to Figure 14 (b), light emitting device package includes substrate 300 and light-emitting device 400, secondary installation substrate 500 and peace Wire 330 in the cavity 317 formed in being mounted in the upper surface of substrate 300, substrate 300 include the first framework 311, the second framework 313 and the insulating barrier 315 that is arranged between the first framework 311 and the second framework 313.
Light-emitting device 400 can include the light-emitting device of exemplary embodiment as described above.
First framework 311 and the second framework 313 can be metal framework or ceramic frame or including metal framework or pottery Porcelain framework.In the case of the first framework 311 and the second framework 313 are metal framework, they can be included containing Al, Ag, Cu Or the monometallic or its alloy with excellent electrical characteristic and the analog of thermal radiation property such as Ni.
Insulating barrier 315 can include bonding part, and for by the first framework 311 and the second framework 313 be fixed to its two Side.By pad and power supply are connected to each other by wire 330, light-emitting device 400 can be powered.
Figure 15 (a) to Figure 15 (f) is same according to the exemplary light-emitting device of some embodiments and manufacture for description The cross-sectional view and plan of the illustrative methods of exemplary light-emitting device.Except body electrode 180 and the shape of insulated support 170 Formula is different outer, and the exemplary embodiment of Figure 15 (a) to Figure 15 (f) is identical with the embodiment of Figure 13 (b).Therefore, will omit and repeat Description.
Reference Figure 15 (a) to 15 (f), body electrode 180 and/or insulated support 170 can have multilevel hierarchy.For example, The upper and lower of body electrode 180 and/or insulated support 170 can have different width.Additionally, body electrode 180 and/or Insulated support 170 can be divided into shape in the technique before single diode according to the chip of this exemplary embodiment Into.
Referring again to Figure 15 (a), insulated support 170 can be with the part of the lower surface of nappe electrode 180.Namely Say, in addition to 180 lower opening area of body electrode, insulated support 170 can be with nappe electrode 180.In patent document In, compared with correlation technique, body electrode 180 can be configured to be more closely.Therefore, will sent out by soldering paste or the like Electro-optical device be arranged on printed circuit board (PCB) or the like it is upper when, the short circuit between the body electrode 180 produced due to soldering paste may be into For problem.However, in the present example embodiment, in addition to the lower opening area of body electrode 180, under body electrode 180 The part on surface is covered by insulated support 170, so that being prevented between the body electrode 180 produced due to soldering paste Short circuit.That is, the recess of 180 lower surface of exposure body electrode is defined, and the side wall of recess is by insulated support 170 Formed, so that the short circuit being prevented between body electrode 180.
According to the exemplary embodiment of Figure 15 (a), body electrode 180 is being arranged on absolutely by electroplating technology or similar techniques After in the interior zone of edge support member 170, can be by the exhausted of the exterior lateral area of additional technique formation nappe electrode 180 Edge support member 170.
Referring again to Figure 15 (b), the exemplary embodiment of Figure 15 (b) is different from the embodiment of Figure 15 (a), its difference It is that the insulated support 170 being arranged between body electrode 180 is formed with multilevel hierarchy in body electrode 180.It is exemplary at this In embodiment, both body electrode 180 and insulated support 170 have multilevel hierarchy, its upper and lower end in the structure With different width.According to the exemplary embodiment of Figure 15 (b), until the insulated support being arranged between body electrode 180 Before 170 width changes, body electrode 180 is formed.Subsequently, the regional area of body electrode 180 is by being arranged between body electrode 180 Insulated support 170 cover.Again, body electrode 180 is formed, and the exterior lateral area of the body electrode 180 of construction complete is by exhausted Edge support member 170 is covered, so that the shape for forming insulated support 170 is possibly realized.
Referring again to Figure 15 (c), the exemplary embodiment of Figure 15 (c) is identical with the embodiment of Figure 15 (b), except body electrode Outside 180 lower surface and the lower surface of insulated support 170 are flatly parallel to each other.In the present example embodiment, arrange There is multilevel hierarchy, and body electrode 180 facing with each other in the insulated support 170 in region of body electrode 180 With multilevel hierarchy.
Accordingly it is possible to prevent the short circuit between the body electrode 180 produced due to soldering paste, and without by insulated support The exterior lateral area of 170 lower surfaces for being set to nappe electrode 180.
Referring again to Figure 15 (d), the exemplary embodiment of Figure 15 (d) is identical with the embodiment of Figure 15 (c), except body electrode The width of the insulated support 170 in 180 has outside gradient, and the gradient is from the upper end of insulated support 170 to its lower end Portion continuously increases.Additionally, the width of body electrode 180 can with from the bottom of body electrode 180 to its upper end continuously The gradient of increase.
In the present example embodiment, the width of the insulated support 170 being arranged between body electrode 180 can be continuously Increase.In order to form the shape of the insulated support 170 according to this exemplary embodiment, in this patent text as described above In the light-emitting device of the exemplary embodiment offered, etch process or similar technique are performed, so that all flat exhausted in lower surface After the formation of edge support member 170 and body electrode 180 is completed, formed in the region between body electrode 180 recessed with gradient Groove.Subsequently, groove is inserted with insulated support 170, so that the exhausted of the exemplary embodiment according to Figure 15 (d) can be formed The shape of edge support member 170.Alternatively, after body electrode 180 is formed by plating or similar technique so that forming body electricity The groove with gradient is formed between body electrode 180 while pole 180, groove is inserted with insulated support 170, so that The shape of the insulated support 170 according to this exemplary embodiment can be formed.
Referring again to Figure 15 (e), the exemplary embodiment of Figure 15 (e) is identical with the embodiment of Figure 15 (d), except insulation Outside the exterior lateral area of the lower surface of 170 nappe electrode 180 of support member.In the insulation of the exemplary embodiment according to Figure 15 (d) After the shape of support member 170 is formed, can be by electric by body according to the shape of the insulated support 170 of this exemplary embodiment The additional process that the exterior lateral area of the lower surface of pole 180 is covered is formed.
In patent document, the exemplary embodiment of Figure 15 (a), Figure 15 (b) and Figure 15 (e) has common ground, and which is altogether With putting it is：The lower surface of body electrode 180 and insulated support 170 is not parallel each other, defines the following table of exposure body electrode 180 The recess in face, and the side wall of recess formed by insulated support 170.In the present example embodiment, it is recessed due to passing through Portion's holding soldering paste is to fix light-emitting device, so alignment can be easily realized in surface mounting technology.
Figure 15 (f) is that wherein body electrode 180 is arranged to the exemplary enforcement in Figure 15 (a), Figure 15 (b) and Figure 15 (e) The plan observed in example.The pattern that couples below insulated support 170 is illustrated by the broken lines.
With reference to Figure 15 (f), the recess of the lower surface of the part of each individual electrode 180 by insulated support 170 and It is exposed.Each exposed body electrode 180 can be electrically connected to the electrode pattern with positive electrode and negative electrode.
In patent document, although not shown, before or after cell diodes are divided the wafer into, can be by Wavelength conversion layer is deposited or is coated on light-emitting device, and the light-emitting device is the chip for being formed with the second insulating barrier 190 thereon Or cell diodes.Wavelength conversion layer can have uniform thickness.Wavelength conversion layer can be containing the light for producing active layer 123 Phosphor and resin that wavelength is changed.Phosphor with mixed with resin and arbitrarily or can be uniformly arranged.
Resin may include the fluoropolymer resin of such as epoxy resin or acrylic resin, or silicones, and conduct makes phosphorescence The scattered matrix of body.Phosphor may include various phosphors well known in the prior art and may include such as garnet phosphor, Aluminate phosphorus, sulphide phosphor, oxynitride phosphor, nitride phosphors, the phosphor based on fluoride or silicon At least one in hydrochlorate phosphor.However, patent document not limited to this, and other embodiment is also feasible.
The rotation that such as aerosol, pulsed laser deposition (PLD), printing can be utilized or carried out using rotation cloth glass (SOG) Various methods such as apply depositing or coat wavelength conversion layer.
In addition, in patent document, although not shown, before or after single device is divided the wafer into, Optical glass lens can be arranged on light-emitting device, the light-emitting device is the crystalline substance for being formed with the second insulating barrier 190 thereon Piece or cell arrangement.The beam angle of the controllable light produced by active layer 123 of optical glass lens.Furthermore it is possible to using tool There are lenticule or the optical glass lens of Fresnel lens form that secondary optical lens are formed on light-emitting device.Can utilize SOG is adhered to optical glass lens on light-emitting device as adhesive transparent with machine material.Using optically transparent SOG or transparent with machine material such that it is able to reduce light loss.Further, it is formed in wavelength conversion layer as described above and sends out After on electro-optical device, optical glass lens can be formed.
In patent document, light-emitting device can be straight by the body electrode 180 for being surrounded or surrounded by insulated support 170 Connect installation on a printed circuit, and the side surface of body electrode 180 does not expose, such that it is able to prevent such as tin (Sn) in soldering paste Deng metallic element be diffused in light-emitting device.Further, since according to the insulation included in the light-emitting device of patent document Support member 170 and body electrode 180 can region 175 is mechanically to each other to be coupled coupling, therefore can improve the reliability of light-emitting device. Further, since body electrode 180 can be disposed adjacent to each other, therefore the radiation efficiency of light-emitting device can be improved.
Figure 16 and Figure 17 respectively illustrate the plane of the exemplary light-emitting device of some embodiments according to patent document Figure and cross-sectional view.Figure 17 illustrates the cross section intercepted along the line I-I' of Figure 16, and Figure 18 (a) to Figure 18 (d) is special according to this The plan of the light-emitting device of some embodiments of sharp document.
With reference to Figure 16 and Figure 17, light-emitting device includes the contact contact electrode of electrode 230, second of ray structure 220, first 240th, insulating barrier 250, insulating barrier 260, bulk electrode 271, the second body electrode 273 and insulated support 280.Further, Light-emitting device can further include growth substrates (not shown), connection electrode 245 and stress-buffer layer 265.
Ray structure 220 includes the first conductive-type semiconductor layer 221, is arranged on the first conductive-type semiconductor layer 221 Active layer 223 and the second conductive-type semiconductor layer 225 being arranged on active layer 223.First conductive-type semiconductor layer 221, have Active layer 223 and the second conductive-type semiconductor layer 225 may include the compound semiconductor based on III-V, such as based on nitride Semiconductor, such as (Al, Ga, In) N.First conductive-type semiconductor layer 221 may include p-type impurity (such as Si), the second conductivity type half Conductor layer 225 may include n-type impurity (such as Mg), and vice versa.Active layer 223 may include MQW (MQW) structure, And the composition ratio of active layer 223 is can determine, so as to launch the light with desired peak wavelength.
In addition, ray structure 220 is may include by the second conductive-type semiconductor layer 225 and 223 part of active layer are removed And the first conductive-type semiconductor layer 221 is partly exposed to into the region in which.For example, as shown in figure 17, ray structure 220 can Including through the second conductive-type semiconductor layer 225 and active layer 223 by the first conductive-type semiconductor layer 221 exposed at least Individual hole 220a.The quantity of hole 220a can be multiple, and the form and layout of hole 220a are not limited to those shown in Figure 17.In addition, By the second conductive-type semiconductor layer 225 and 223 part of active layer are removed, it is also possible to provide the first conductive-type semiconductor layer 221 are partly exposed to the region in which, so as to form the table top including the second conductive-type semiconductor layer 225 and active layer 223.
In some embodiments, ray structure 220 can further include by increase the roughness of its lower surface and shape Into matsurface 220R.Matsurface 220R can by wet process, dry etching or electrochemical etching process at least A kind of method is formed, and can be for example, by Optical Electro-Chemistry (PEC) etching method, using the etching solution for including KOH and NaOH Engraving method etc. is formed.Therefore, ray structure 220 may include to be formed in 221 surface of the first conductive-type semiconductor layer and have micro- Protuberance and/or recess of the rice to nanoscale.By matsurface 220R, the light that sent by ray structure 220 can be improved Light extraction efficiency.
In some embodiments, ray structure 220 can be further included below the first conductive-type semiconductor layer 221 Growth substrates (not shown).As long as ray structure 220 can be grown in growth substrates, growth substrates are just unrestricted.Example Such as, growth substrates can be or including Sapphire Substrate, silicon carbide substrates, silicon substrate, gallium nitride substrate or aluminium nitride substrate etc.. Multiple technologies can be used, growth substrates from ray structure 220 are separated and removed.
Second contact electrode 240 is may be provided on the second conductive-type semiconductor layer 225, and can be with the second conductivity type half Conductor layer 225 forms Ohmic contact.In some embodiments, the second contact electrode 240 can cover second at least in part and lead The upper surface of electric type semiconductor layer 225, and can be set to substantially cover the upper surface of the second conductive-type semiconductor layer 225.Enter One step ground, can form the second contact electrode 240 to cover the upper surface of the second conductive-type semiconductor layer 225, the second conductivity type Semiconductor layer 225 as the first conductive-type semiconductor layer 221 except ray structure 220 remaining area in addition to exposed position The monomer in domain.Therefore, electric current is supplied uniformly to whole ray structure 220, so as to improve current dissipation efficiency.However, this Patent document not limited to this, and other embodiment is also feasible.For example, the second contact electrode 240 may also include multiple lists First electrode.
Second contact electrode 240 can be made up of the material that can form Ohmic contact with the second conductive-type semiconductor layer 225 Or including the material, and may include such as metal material and/or conductive oxide.
When the second contact electrode 240 includes metal material, the second contact electrode 240 may include reflecting layer and cover reflection The coating of layer.As described above, the second contact electrode 240 is forming the same of Ohmic contact with the second conductive-type semiconductor layer 225 When, it is also possible to for reflected light.Therefore, reflecting layer may include with high reflectance and can be with the second conductive-type semiconductor layer 225 Form the metal of Ohmic contact.For example, reflecting layer may include Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag or Au or its combination.Separately Outward, reflecting layer may include single or multiple lift.
Coating can prevent the phase counterdiffusion between reflecting layer and other materials, it is possible to prevent by outside other materials Reflecting layer is caused to damage to reflecting layer diffusion.Therefore, it can to form coating, to cover the lower surface and side surface in reflecting layer. Coating can be electrically connected together the second conductive-type semiconductor layer 225 with reflecting layer, so as to serve as electrode together with reflecting layer. Coating may include, for example, Au, Ni, Ti, Cr etc., and and may include single or multiple lift.
Reflecting layer and coating can be formed using electron beam evaporation or electroplating schemes etc..
Meanwhile, second contact electrode 240 include conductive oxide in the case of, conductive oxide can be or including ITO, ZnO, AZO or IZO etc..Compared with when the second contact electrode 240 includes metal, when the second contact electrode 240 includes conduction During oxide, the region for increasing the upper surface of the second conductive-type semiconductor layer 225 covered by the second contact electrode 240 is possible 's.When the second contact electrode 240 is made up of conductive oxide or during including conductive oxide, from the first conductive-type semiconductor layer 221 exposed region edge to second contact electrode 240 between spacing distance can be with relatively short.In such case Under, as the part contacted with each other from the second contact electrode 240 and the second conductive-type semiconductor layer 225 is to the first contact electrode 230 and first the beeline between the part that contacts with each other of conductive-type semiconductor layer 221 can become relatively short, therefore The forward voltage Vf of light-emitting device can be reduced.
This be due to the second contact electrode 240 be made up of metal material or including metal material in the case of the system that uses Make method and the second contact electrode 240 be made up of conductive oxide or including conductive oxide in the case of the manufacturer that uses Have differences between method.For example, as metal material is formed in deposition or electroplating schemes, technique model of the metal material in mask The part separated with the outer rim of the second conductive-type semiconductor layer 225 is formed at preset distance in enclosing.On the other hand, electric conductive oxidation Thing is generally formed on the second conductive-type semiconductor layer 225, is then carried out the first conductive-type semiconductor layer 221 is exposed Removed by identical technique in etching process.Therefore, it can to form conductive oxide, so as to from the second conductive-type semiconductor layer 225 outer rim relative close.However, patent document not limited to this, and other embodiment is also feasible.
In addition, including ITO in the second contact electrode 240, the first insulating barrier 250 includes SiO2, and in the first contact electricity In the case that pole 230 includes Ag, can be formed including ITO/SiO2The omnibearing reflector of the stacked structure of/Ag.
Insulating barrier 250 and 260 part of insulating barrier cover first and contact electrode 230 and the second contact electrode 240, and by the One contact electrode 230 and the second contact electrode 240 are insulated from each other.Insulating barrier 250 and insulating barrier 260 may include the first insulating barrier 250 and second insulating barrier 260.Then, the first insulating barrier 250 is first described, subsequently description is associated with the second insulating barrier 260 Content.
First insulating barrier 250 can partly cover the upper surface of ray structure 220 and the second contact electrode 240.In addition, first Insulating barrier 250 can cover the side surface of hole 220a, and can be by the first conductive-type semiconductor layer 221 being exposed in the 220a of hole Divide ground exposure.First insulating barrier 250 may include that the opening portion being arranged on part corresponding with hole 220a and exposure second are contacted The opening portion of the part of electrode 240.By above-mentioned opening portion, can be by the first conductive-type semiconductor layer 221 and the second contact electricity Pole 240 is partially exposed.
First insulating barrier 250 may include insulating materials, such as SiO2, SiNx or MgF2Deng.Further, the first insulating barrier 250 may include multilayer, and may include distributed Bragg reflector, and the material for having different refractivity in which is alternately stacked.
In the case where the second contact electrode 240 includes conductive oxide, the first insulating barrier 250 includes distributed Bragg Reflector such that it is able to improve the luminous efficiency of light-emitting device.In addition, being different from this, the second contact electrode 240 includes conductive oxygen Compound, the first insulating barrier 250 is by transparent insulation oxide (such as SiO2) make or including transparent insulation oxide such that it is able to Omnibearing reflector is formed using the stacked structure of the second contact electrode 240, the first insulating barrier 250 and the first contact electrode 230. In some embodiments, the first contact electrode 230 is defined, substantially to be covered except the second contact electrode 240 substantially The surface of the first insulating barrier 250 beyond the region that part is exposed.Therefore, a part of of the first insulating barrier 250 can be between Between first contact electrode 230 and the second contact electrode 240.
In some embodiments, the first insulating barrier 250 can further cover at least the one of the side surface of ray structure 220 Part.First insulating barrier 250 covers the degree of the side surface of ray structure 220 can be according to the core in light-emitting device manufacture process The isolation of blade unit is changing.In some embodiments, the first insulating barrier 250 can be formed, only to cover ray structure 220 upper surface.Alternatively, after isolate chip in chip unit, form first and insulate In the case of layer 250, the side surface of ray structure 220 can also be covered by the first insulating barrier 250.
First contact electrode 230 can partly cover ray structure 220.In addition, the first contact electrode 230 is conductive with first Type semiconductor layer 221 carries out Europe by the opening portion of hole 220a and the first insulating barrier 250 being arranged on corresponding part Nurse is contacted.In the present example embodiment, the first contact electrode 230 can be formed, substantially to cover except the first insulating barrier Other parts beyond 250 subregion.Therefore, by the first contact electrode 230, light can be reflected.In addition, by the First contact electrode 230 can be contacted electrode 240 with second and is electrically insulated by one insulating barrier 250.
The first contact electrode 230 is defined, substantially to cover the upper table of the ray structure 220 in addition to subregion Face such that it is able to further improve current dissipation efficiency.Further, since the first contact electrode 230 can be covered and not connect by second The part that touched electrode 240 is covered, therefore light more effectively reflected such that it is able to improve the luminous efficiency of light-emitting device.
As described above, the first contact electrode 230 is while with the first 221 Ohmic contact of conductive-type semiconductor layer, can be with For reflected light.Therefore, the first contact electrode 230 may include the high reflecting metal layer of such as Al layers.Herein, the first contact Electrode 230 can be made up of single or multiple lift or including single or multiple lift.High reflecting metal layer can be formed at by Ti, Cr, Ni Deng on composition or including Ti, Cr, Ni etc. adhesive layer.However, patent document not limited to this, and other embodiment is also Feasible.That is, the first contact electrode 230 may also include at least one in Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag or Au.
In some embodiments it is possible to the first contact electrode 230 is formed, to cover the side table of ray structure 220 Face.In the case where the first contact electrode 230 is also formed in the side surface of ray structure 220, the light that will be sent from active layer 223 Side surface is reflected up to, to improve the ratio of the light of the upper surface for being transmitted into light-emitting device.Electrode 230 is contacted forming first In the case of covering the side surface of ray structure 220, the first insulating barrier 250 can between the side surface of ray structure 220 and Between first contact electrode 230.
Meanwhile, light-emitting device can further include connection electrode 245.Connection electrode 245 can be arranged at the second contact electricity On pole 240, and can be electrically connected on the second contact electrode 240 by the opening portion of the first insulating barrier 250.Further, connect Second contact electrode 240 and the second body electrode 273 can be electrically connected to each other by electrode 245.Furthermore it is possible to form connection electrode 245, partly to cover the first insulating barrier 250, it is possible to contact electrode 230 with first and separate and insulate.
The upper surface of connection electrode 245 can be formed as the height being substantially the same with the first upper surface for contacting electrode 230. In addition, connection electrode 245 can utilize and 230 identical technique of electrode is contacted with first be formed, connection electrode 245 and the first contact Electrode 230 may include identical material.However, patent document not limited to this, and other embodiment is also feasible.Example Such as, connection electrode 245 and the first contact electrode 230 may include different materials.
Second insulating barrier 260 can partly cover the first contact electrode 230, and may include to contact 230, electrode by first Divide exposed first opening portion 260a and the second partially exposed opening portion 260b of electrode 240 is contacted by second.First opens The quantity of oral area 260a and the second opening portion 260b can be one or more.
Second insulating barrier 260 may include insulating materials, such as SiO2, SiNx or MgF2Deng.Further, the second insulating barrier 260 may include multilayer, and may include distributed Bragg reflector, and the material for having different refractivity in which is alternately stacked. Second insulating barrier 260 by multilayer material constitute or including multilayer material in the case of, the superiors of the second insulating barrier 260 can be by SiNx is constituted or including SiNx.The superiors of the second insulating barrier 260 are made up of SiNx such that it is able to more efficiently prevented from moisture and oozed Enter ray structure 220.
Stress-buffer layer 265 is arranged on insulating barrier 250 and insulating barrier 260.In some embodiments, stress-buffer layer 265 may be disposed on the second insulating barrier 260.Stress-buffer layer 265 can cover the upper table of the second insulating barrier 260 at least in part Face, as shown in the figure.In some embodiments, stress-buffer layer 265 can further cover the side surface of the second insulating barrier 260 Part.In this case, stress-buffer layer 265 can contact the first contact electrode 230 and connection electrode 245.For example, stress Cushion 265 can further cover the side surface of the first opening portion 260a and the second opening portion 260b.
Stress-buffer layer 265 is used for the stress produced when light-emitting device is driven that relaxes.Stress-buffer layer 265 can have phase To larger Young's modulus.Therefore, even if when heavily stressed, stress-buffer layer still shows low strain dynamic behavior.Therefore, produce By the effect of 265 energy absorption of stress-buffer layer such that it is able to which reduction puts on the contact electrode of ray structure 220, first 230th, the second contact electrode 240, insulating barrier 250, insulating barrier 260, bulk electrode 271, the second body electrode 273 and insulating supporting The stress of part 280.Relaxed by stress-buffer layer 265 and put on the stress of other parts as above so that luminous dress The mechanical stability put is improved, and causes to crack the possibility reduction with failure, so as to improve light-emitting device Stability.
In addition, stress-buffer layer 265 can be with lower than insulating barrier 250, insulating barrier 260 and/or insulated support 280 residual Residue stress (is produced by predetermined stress).Therefore, stress-buffer layer 265 can be in the process for being repeatedly opened or closing light-emitting device In other parts as above are put on to relax by residual stress stress.In addition, stress-buffer layer 265 can have phase To excellent moisture absorbing feature.For example, the moisture absorbing feature of stress-buffer layer 265 can be less than insulated support 280.Should Power cushion 265 has relatively low moisture absorbing feature such that it is able to prevent from producing as moisture is penetrated in light-emitting device Crackle and lamination.
Additionally, the cohesive between stress-buffer layer 265 and insulated support 280 can be higher than insulating barrier 250, insulating barrier Cohesive between 260 and insulated support 280.Therefore, the feelings being formed at insulated support 280 on second insulating barrier 260 Compare under condition, in the case where insulated support 280 is formed on stress-buffer layer 265, interface product can be significantly reduced to It is estranged from or layering possibility.
Stress-buffer layer 265 with effect as described above may include insulating materials, and which shows stress relaxation behavior simultaneously Effect with the effect and raising cohesive for preventing moisture penetration.For example, stress-buffer layer may include polyimides, polytetrafluoro At least one in ethene, benzocyclobutene (BCB) or Parylene.In some embodiments, stress-buffer layer 265 can Including photosensitive material (such as polyimides), and in the case where stress-buffer layer 265 includes photosensitive material, just with making The technique of developing photosensitive material can just form stress-buffer layer 265.Therefore, it can omit individually additional patterning process, Such that it is able to simplify the manufacture process of light-emitting device.Stress-buffer layer 265 can contact bulk electrode 271, the second body electrode 273 and insulated support 280.
As long as stress-buffer layer 265 can obtain effective stress relaxation behavior and impermeable effect, then stress buffer The thickness of layer 265 is unrestricted, and can be about 2-30 μm.However, patent document not limited to this, and other embodiment It is feasible.
Stress-buffer layer 265 can be formed by deposition and Patternized technique.It is possible to further simultaneously by stress buffer Layer 265 and the second insulating barrier 260 are patterned.For example, define and cover the first the second insulating barrier 260 for contacting electrode 230, Stress-buffer layer 265 is formed on the second insulating barrier 260, and while is carried out the second insulating barrier 260 and stress-buffer layer 265 Patterning such that it is able to which stress-buffer layer as depicted 265 is provided.However, patent document not limited to this, and other enforcements Mode is also feasible.
It is also possible to omit stress-buffer layer 265.
Bulk electrode 271 and the second body electrode 273 are may be disposed on ray structure 220, and can be electrically connected respectively to One contact electrode 230 and the second contact electrode 240.In some embodiments, bulk electrode 271 and the second body electrode 273 Directly or the first contact electrode 230 and the second contact electrode 240 can be electrically connected to respectively.Herein, 271 He of bulk electrode Second body electrode 273 can be electrically connected to the first contact electrode 230 by the first opening portion 260a and the second opening portion 260b respectively With the second contact electrode 240.
It is prominent that bulk electrode 271 may include that the side surface of the second body of the direction electrode 273 from bulk electrode 271 is projected Go out portion 271a.Second body electrode 273 includes the recessed of the side surface depression of the direction bulk electrode 271 from the second body electrode 273 Portion 273a.Protuberance 271a and recess 273a are contained in bulk electrode 271 and the second body electrode 273 respectively, so as to can phase Horizontal cross-sectional area to increasing the horizontal cross-sectional area relatively reduced second body electrode 273 of bulk electrode 271.Cause This, the horizontal cross-sectional area of bulk electrode 271 is more than the horizontal cross-sectional area of the second body electrode 273.
In addition, the dummy line formed along bulk electrode 271 and the second body electrode 273 interval region relative to each other D1-D1' can have one or more sweeps.Although the shape of dummy line D1-D1' with one or more sweeps It is corresponding with protuberance 271a and recess 273a with layout, but patent document not limited to this, and other embodiment is also Feasible.The beginning and end of dummy line D1-D1' is may be disposed on the same line.As illustrated, the starting point of dummy line D1-D1' Substantially it is arranged on the line of light-emitting device uniform decile with terminal, and dummy line D1-D1' is bending, such dummy line D1-D1' can be positioned, so that one part is closer to the second body electrode 273.
Protuberance 271a and recess 273a can be set in the way of being engaged with each other.For example, as shown in figure 16, recess 273a The degree of depression and its position can be corresponding generally to the degree of protuberance 271a protrusions and its position respectively.Therefore, the first body electricity Spacing distance between pole 271 and the second body electrode 273 can somewhat constant.
Meanwhile, the shape of protuberance 271a and recess 273a is not limited to shape as shown in figure 16.For example, such as Figure 18 (a) Shown, protuberance 271a can have change in the projected direction of the side surface from bulk electrode to the surface of protuberance 271a Width.In some embodiments, the width of protuberance 271a can reduce in projected direction.Recess 273b is from the second body electricity The side surface of pole can also have the width of change to the depression in the surface direction of recess 273b.In some embodiments, recess The width of 273b can reduce in depression direction, to correspond to protuberance 271b.Herein, along first toward each other Dummy line D2-D2' that interval region between body electrode 271 and the second body electrode 273 extends can be with one or more bendings Part.In addition, as shown in Figure 18 (b), multiple protruding portion 271c can be formed, and one or more recesses can be formed 273c, its shape are corresponding with least some of prominent shape in multiple protruding portion 271c.Herein, along toward each other Bulk electrode 271 and the second body electrode 273 between interval region extend dummy line D3-D3' can have one or many Individual sweep, and can be with the more sweeps of exemplary embodiment than Figure 18 (a).In addition, as shown in Figure 18 (c), Protuberance 271d can have the width of change, the width for for example increasing in projected direction in projected direction.Recess 273d is in depression Direction can also have the width of change, the width for for example reducing in depression direction, to correspond to protuberance 271d.Herein In, dummy line D4-D4' that the interval region along between bulk electrode 271 toward each other and the second body electrode 273 extends There can be one or more sweeps.In addition, as shown in Figure 18 (d), multiple protruding portion 271e can be formed, and can be with shape Into one or more recesses 273e, its shape is corresponding with least some of prominent shape in multiple protruding portion 271e.It is prominent The outside of portion 271e and recess 273e can forming curves shape.Herein, along bulk electrode 271 and second toward each other Dummy line D5-D5' that interval region between body electrode 273 extends can have one or more sweeps.
However, patent document not limited to this, and other embodiment is also feasible.For example, protuberance 271a and recessed The shape of portion 273a can carry out various modifications.
Heat is generated when light-emitting device is driven.However, due to insulated support 280 and body electrode 271 and body electricity Pole 273 has different thermal coefficient of expansions, therefore, when heat is produced, stress is applied in insulated support 280 and body electricity Pole 271 and body electrode 273.In some embodiments, relatively large stress is applied in bulk electrode 271 and the second body Region between electrode 273, can crack in such insulated support 280, and can produce insulated support 280 and The phenomenon that body electrode 271 and body electrode 273 are layered each other.Region between body electrode 271 and body electrode 273 is formed as straight line In the case of shape, the crackle produced in insulated support 280 is easy to linearly extend, so as to damage light-emitting device.Example Such as, limiting between body electrode 271 and body electrode 273 and in the dummy line with rectilinear form, form dummy line with Just it is only overlap with insulated support 280 and it is nonoverlapping with body electrode 271 and body electrode 273 in the case of, body electrode 271 and body The crackle produced between electrode 273 is easy to along dummy line extend, so as to produce 280 detached problem of insulated support.
According to this exemplary embodiment, bulk electrode 271 includes protuberance 271a, and the second body electrode 273 includes recess 273a, and the dummy line that the interval region along between bulk electrode 271 relative to each other and the second body electrode 273 extends D1-D1' has at least one sweep, the SI semi-insulation between body electrode 271 and body electrode 273 is supported so as to increased The resistance of the stress of part 280.Even if in addition, producing in SI semi-insulation support member 280 between body electrode 271 and body electrode 273 Crackle, it is also possible to which the region between body electrode 271 and body electrode 273 forms at least one sweep, such that it is able to press down The extension of crackle processed.In some embodiments, body electrode 271 and body electrode 273 it is at least part of with by dummy line D1-D1' Beginning and end be connected to each other and another with rectilinear form virtual line overlap, so as to by with rectilinear form The part of the body electrode 271 and body electrode 273 of another virtual line overlap, while insulated support 280 are passed through, blocking The extension of crackle.Therefore, even if generating crackle in insulated support 280, it is also possible to effectively prevent 280 points of insulated support From phenomenon.
Additionally, increased the mechanical stability of insulated support 280 and body electrode 271 and body electrode 273, and improve Stress resistance such that it is able to the crackle that produces in suppressing insulated support 280 or damage or suppress insulated support 280 and Layering each other in the separation process of the growth substrates of body electrode 271 and body electrode 273 in light-emitting device manufacture process.
Therefore, excellent mechanical stability is had according to the light-emitting device of this exemplary embodiment.For example, can provide logical Crossing prevents insulated support 280 from cracking and damages and have the light-emitting device of excellent reliability.Further, due to subtracting In the manufacture process of the structure for having lacked the light-emitting device according to this exemplary embodiment, light-emitting device produces the possibility of defect, can To improve the process yield of light-emitting device.
Additionally, bulk electrode 271 includes protuberance 271a so that the horizontal cross-sectional area of bulk electrode 271 is big In the second body electrode 273, so as to improve the radiating efficiency of light-emitting device.It is N-type half in the first conductive-type semiconductor layer 221 In the case of conductor layer, bulk electrode 271 also acts as N-type electrode, and the light transmitting produced when light-emitting device is driven The region Relatively centralized being located in bulk electrode 271 with heat.Therefore, similar to this exemplary embodiment, bulk electrode 271 horizontal cross-sectional area is formed larger than the horizontal cross-sectional area of the second body electrode 273, so that in the whole of light-emitting device Light transmitting in individual light-emitting zone is uniform such that it is able to improves light emission characteristics, and passes through bulk electrode 271, effectively Heat is distributed such that it is able to improve the radiation efficiency of light-emitting device.Therefore, by the position depending on ray structure 220 Temperature contrast is minimized such that it is able to improve temperature homogeneity.Also prevent the combination temperature of the specific location of ray structure 220 The excessive rising of degree Tj, so that the efficiency for preventing light-emitting device is reduced such that it is able to improve the reliability of light-emitting device.
Further, the spacing distance somewhat constant between bulk electrode 271 and the second body electrode 273, such that it is able to Make by protuberance 271a and/or recess 273a to cause by shared by the surface of bulk electrode 271 and the second body electrode 273 The phenomenon that reduces of ratio of upper surface area of area and light-emitting device minimize.Therefore, even if defining protuberance 271a And/or recess 273a, then caused by the reduction of the horizontal cross-sectional area of bulk electrode 271 and the second body electrode 273 The reduction of radiating efficiency can also be prevented from.
Bulk electrode 271 and the second body electrode 273 can have tens microns or bigger thickness, such as 70-80 μm.Body The thickness of electrode 271 and body electrode 273 in scope as described above, so as to light-emitting device can be used for wafer-level package in itself In.
Bulk electrode 271 and the second body electrode 273 can be made up of single or multiple lift or including single or multiple lift, and can be wrapped Include the material with electric conductivity.For example, bulk electrode 271 and the second body electrode 273 may each comprise Cu, Pt, Au, Ti, Ni, Al Or Ag etc..In some embodiments, bulk electrode 271 and the second body electrode 273 may also comprise the gold with sintered form Metal particles and the nonmetallic materials between metallic particles.Galvanoplastic, sedimentation, stipple or silk screen print method can be utilized Bulk electrode 271 and the second body electrode 273 are formed etc. method.Meanwhile, bulk electrode 271 and the second body electrode 273 can divide Bao Kuo not the first metal layer 271s and second metal layer 273s.The first metal layer 271s and second metal layer 273s can be located at respectively Below bulk electrode 271 and the second body electrode 273, to contact electrode 230, contact electrode 240, insulating barrier 250, absolutely Edge layer 260 and stress-buffer layer 265.The first metal layer 271s and second metal layer 273s can be according to body electrode 271 and body electrodes Changing, this will be described in more detail below 273 forming method.
The situation that galvanoplastic form bulk electrode 271 and the second body electrode 273 will be described first.Seed metal passes through The method of such as sputtering method is formed at the whole surface of stress-buffer layer 265, the first opening portion 260a and the second opening portion 260b. Seed metal may include Ti, Cu, Au or Cr etc., and serve as under-bump metallization (UBM) layer.For example, seed metal can have Ti/ The stacked structure of Cu.Then, mask is formed in seed metal.Mask has been sheltered and the region phase for forming insulated support 280 Corresponding part has simultaneously opened the region for forming bulk electrode 271 and the second body electrode 273.Then, 271 He of bulk electrode Second body electrode 273 is formed at the open area of mask by electroplating technology.Then, mask and seed crystal are removed by etch process Metal, such that it is able to provide bulk electrode 271 and the second body electrode 273.Herein, remain in 271 He of bulk electrode The seed metal not removed below second body electrode 273 becomes the first metal layer 271s and second metal layer 273s.
The situation that bulk electrode 271 and the second body electrode 273 are formed using silk screen print method will be described.UBM layer leads to The patterning method for crossing such as sputtering method or deposition and stripping method is formed at stress-buffer layer 265, the first opening portion 260a and the Two opening portion 260b it is at least part of on.UBM layer can be formed at the area of bulk electrode 271 to be formed and the second body electrode 273 Domain, and may include (Ti or TiW) layer and the individual layer including Cu, Ni or Au or its combination layer.For example, UBM layer can have Ti/Cu Stacked structure.UBM layer corresponds to the first metal layer 271s and second metal layer 273s.Then, form mask.Mask is sheltered The part corresponding with the region for forming insulated support 280 has simultaneously opened formation bulk electrode 271 and the second body electrode 273 Region.Then, such as the material of Ag cream, Au cream or Cu cream is formed at open area by silk-screen printing technique and hardens.Connect , mask is removed by etch process, such that it is able to provide bulk electrode 271 and the second body electrode 273.
Insulated support 280 is arranged on ray structure 220, and nappe electrode 271 and body electrode 273 at least in part Side surface.Insulated support 280 has electrical insulation capability, and covers the side of bulk electrode 271 and the second body electrode 273 Surface, so that bulk electrode 271 and the second body electrode 273 are insulated effectively with each other.Meanwhile, insulated support 280 can use In support bulk electrode 271 and the second body electrode 273.Insulated support 280 may include such as epoxy molding plastic or Si resins Material.In addition, insulated support 280 may include such as TiO2The reflective or optical scatter of particle.For example, in insulating supporting In the case that part 280 includes EMC, stress-buffer layer 265 can prevent insulated support 280 from separating and can prevent moisture from penetrating into Insulated support 280, as mentioned above.
In some exemplary embodiments, unlike the form for illustrating, insulated support 280 can also cover ray structure 220 side surface.In this case, the angle of the light for sending from ray structure 220 can change.For example, in insulating supporting In the case that part 280 further covers at least a portion of side surface of ray structure 220, some are transmitted into ray structure 220 Side surface light can to ray structure 220 lower surface reflect.As described above, adjusting the area for arranging insulated support 280 Domain such that it is able to adjust the angle of the light that light-emitting device sends.
Figure 19 and Figure 20 is namely for description according to the exemplary light-emitting device of some embodiments of patent document Plan and cross-sectional view.Figure 20 shows the cross section of the part corresponding with the line II-II' of Figure 19.
Light-emitting device of the light-emitting device of Figure 19 and Figure 20 different from Figure 16 and Figure 17, difference is insulated support 280 include insulated support 281 and lower insulated support 283, and light-emitting device further includes pad electrode 291 and weldering Disc electrode 293.Hereinafter, it will the light-emitting device according to this exemplary embodiment is described based on the difference, and will Omit to stacked detailed description.
With reference to Figure 19 and Figure 20, light-emitting device includes the contact contact electrode of electrode 230, second of ray structure 220, first 240th, insulating barrier 250, insulating barrier 260, bulk electrode 271, the second body electrode 273, insulated support 280 and the first pad Electrode 291 and the second pad electrode 293.Further, light-emitting device can further include growth substrates (not shown), connection electricity Pole 245 and stress-buffer layer 265.
Insulated support 280 is arranged on ray structure 220, and nappe electrode 271 and body electrode 273 at least in part Side surface and body electrode 271 and body electrode 273 upper surface.In addition, insulated support 280 may include partially exposed The opening portion of the upper surface of bulk electrode 271 and the second body electrode 273.Insulated support 280 may include insulated support 281 With lower insulated support 283.Lower insulated support 283 can enclosure body electrode 271 and body electrode 273 side surface, and it is upper absolutely Edge support member 281 can partly nappe electrode 271 and body electrode 273 upper surface.In addition, upper insulated support 281 can Cover lower interface between insulated support 283 and body electrode 271 and body electrode 273.
Insulated support 280 has electrical insulation capability, and covers the side of bulk electrode 271 and the second body electrode 273 Surface, so that bulk electrode 271 and the second body electrode 273 are insulated effectively with each other.Meanwhile, insulated support 280 can use In support bulk electrode 271 and the second body electrode 273.
The upper surface of body electrode 271 and body electrode 273 is partly covered by upper insulated support 281, so as to the first body electricity The area of the expose portion of the upper surface of pole 271 and the second body electrode 273 is respectively smaller than bulk electrode 271 and the second body electrode 273 horizontal cross-sectional area.Especially, upper insulated support 281 may be disposed at bulk electrode 271 relative to each other and The upper surface of the adjacent body electrode 271 of the side surface of the second body electrode 273 and body electrode 273.Therefore, by upper insulated support Spacing distance between the 281 exposed bulk electrode 271 in opening portion and the upper surface of the second body electrode 273 is more than the first body Spacing distance between electrode 271 and the second body electrode 273.
In more detail, conductive material (such as solder, electroconductive binder or eutectic material etc.) is formed at exposed upper surface Between 271a and 273a and independent substrate, to allow light-emitting device and independent substrate to be bonded to each other such that it is able to will be luminous Device is installed on independent substrate.In order to prevent from producing between body electrode 271 and body electrode 273 by being formed for bonding Electrical short caused by conductive material institute, it is desirable to which the spacing distance between exposed upper surface becomes predetermined numerical value or bigger number Value, as mentioned above.According to patent document, insulated support 280 is formed, so as to partly nappe electrode 271 and body electrode 273 upper surface, so that the spacing distance between the upper surface of bulk electrode 271 and the second body electrode 273 is more than first Spacing distance between body electrode 271 and the second body electrode 273.Therefore, the spacing distance between exposed upper surface can be with shape Into to predetermined numerical value or sufficiently large, to prevent that electrical short is produced between body electrode 271 and body electrode 273, and body electrode Spacing distance between 271 and body electrode 273 can form predetermined numerical value or sufficiently small, to prevent 271 He of body electrode Electrical short is produced between body electrode 273.It is thus possible to improve the radiation efficiency of light-emitting device, and effectively can also prevent Only electrical short is produced in light-emitting device installation process.
Spacing distance between the exposed upper surface of bulk electrode 271 and the second body electrode 273 is unrestricted, but In the case where light-emitting device to be installed to independent substrate by welding, which can be about 250 μm or bigger, and pass through In the case that light-emitting device to be installed to eutectic bonding process independent substrate, which can be about 80 μm or bigger.However, this is specially Sharp document not limited to this, and other embodiment is also feasible.
In addition, upper insulated support 281 is arranged at the side surface of body electrode 271 relative to each other and body electrode 273 Upper peripheral region, so that the spacing distance shape between the exposed upper surface of bulk electrode 271 and the second body electrode 273 Into to predetermined numerical value or bigger, this it is sufficient that, the form that upper insulated support 281 is arranged at other regions is unrestricted System.For example, such as Figure 19 and Figure 20, the insulated support 280 being arranged between bulk electrode 271 and the second body electrode 273 can Cross section with T-shaped, and cover the insulated support 280 of the outer surface of bulk electrode 271 and the second body electrode 273 Can haveThe cross section of shape.
In addition, insulated support 280 and body electrode 271 and body electrode 273 can be made up of different materials or including not Same material.In some embodiments, insulated support 280 may include insulating polymer and/or insulating ceramics, and body electrode 271 and body electrode 273 may include metal material.Therefore, between insulated support 280 and body electrode 271 and body electrode 273 Layering or crackle can be produced on interface, and can be produced and caused by different materials are bonded to one another caused stress and strain Damage.When insulated support 280 and/or body electrode 271 and body electrode 273 are damaged, ray structure 220 can be polluted, and And can crack in ray structure 220, so as to reduce the reliability of light-emitting device.According to the example of patent document Property embodiment, form insulated support 280, so as to the side surface and upper table of partly nappe electrode 271 and body electrode 273 Face, can improve the mechanical stability between insulated support 280 and body electrode 271 and body electrode 273.Therefore, it can carry The reliability of high light-emitting device.
In addition, improve the mechanical stability of light-emitting device such that it is able to prevent ray structure 220 by growth substrates Damage during (not shown) is detached from ray structure 220.
Further, lower insulated support 283 and upper insulated support 281 can be made up of different materials or including different Material.Lower insulated support 283 and upper insulated support 281 be manufactured from the same material or including identical material in the case of, Insulated support 280 may include the material of such as epoxy molding plastic (EMC) or Si resins.In addition, insulated support 280 may include Such as TiO2The reflective or optical scatter of particle.In lower insulated support 283 and upper insulated support 281 by different materials system Into or including different materials in the case of, upper insulated support 281 can be below down by its fragility and/or moisture absorbing feature The material of insulated support 283 is constituted or may include this material.For example, lower insulated support 283 may include such as epoxy mould The material of plastics (EMC) or Si resins, and upper insulated support 281 may include such as photoresist PR and/or photosensitive imaging resistance The material of solder flux (PSR).
Upper insulated support 281 is made up of the material with relatively low fragility or including the material with relatively low fragility Material so that compared with lower insulated support 283, the possibility for producing failure or crackle are relatively low such that it is able to prevent external contamination Thing is penetrated into by the interface between lower insulated support 283 and body electrode 271 and body electrode 273.In addition, upper insulated support 281 are made up of the material with relatively low moisture absorbing feature or including the material with relatively low moisture absorbing feature Material such that it is able to prevent external contaminants by the boundary between lower insulated support 283 and body electrode 271 and body electrode 273 Face is penetrated into.For example, lower insulated support 283 be made up of the material with high-moisture Absorption Characteristics of such as EMC or including In the case of the material with relative high-moisture Absorption Characteristics of such as EMC, light-emitting device can be by the material system by such as PSR Into or material including such as PSR upper insulated support 281 preventing moisture.In some embodiments, in formation In the case that insulated support 281 is to cover the interface between lower insulated support 283 and body electrode 271 and body electrode 273, Light-emitting device defencive function as above can more effectively be realized.
Meanwhile, the area of the exposed upper surface 271a of body electrode 271 is smaller than bulk electrode 271 and contacts electricity with first The area in the region that pole 230 contacts with each other, and the area of the exposed upper surface 273a of the second body electrode 273 can be more than second Body electrode 273 and the second area for contacting the region that electrode 240 contacts with each other.In this case, the water of bulk electrode 271 Flat cross-sectional area can be more than the horizontal cross-sectional area of the second body electrode 273.
First pad electrode 291 and the second pad electrode 293 can be respectively arranged at bulk electrode 271 and the second body electrode On 273, it is possible to be filled in the exposed insulating supporting in upper surface portion ground of bulk electrode 271 and the second body electrode 273 The opening portion of part 280.Therefore, the first pad electrode 291 and the second pad electrode 293 can be covered each by 271 He of bulk electrode The exposure of the second body electrode 273.Therefore, the spacing distance between the first pad electrode 291 and the second pad electrode 293 can be right Spacing distance between the exposed upper surface of Ying Yu bulk electrodes 271 and the second body electrode 273.
In addition, as illustrated, the upper surface of the first pad electrode 291 and the second pad electrode 293 can be located at and insulation At the substantially concordant position in the upper surface of support member 280.In this case, the upper surface of light-emitting device is formed as generally flat 's.In addition, the first pad electrode 291 can have substantially the same area with the upper surface of the second pad electrode 293.Therefore, The electrical connections for being exposed to the mounting surface of light-emitting device can be formed with identical area, so that installation process becomes easy.
The first pad electrode 291 and the second pad electrode 293 can be formed using the method such as galvanoplastic, so as to by its It is filled in the opening portion of insulated support 280.Then, using physically and/or chemically method, for example, method or chemically mechanical polishing are polished (CMP) the first pad electrode 291 and the second pad electrode 293 and insulated support 280 are partly removed by method etc., so as to can So that the upper surface of the first pad electrode 291 and the second pad electrode 293 is formed as putting down with the upper surface of insulated support 280 Together.
First pad electrode 291 and the second pad electrode 293 may include conductive material, such as metal material, such as Ni, Pt, Pd, Rh, W, Ti, Al, Au, Sn, Cu, Ag, Bi, In, Zn, Sb, Mg or Pb etc..First pad electrode 291 and the second pad electricity Pole 293 may include the material being substantially the same with body electrode 271 and body electrode 273, and can be made up of different materials or including different Material.Sedimentation or galvanoplastic, such as electroless plating method can be utilized to form the first pad electrode 291 and the second pad electrode 293.
Light-emitting device further includes the first pad electrode 291 and the second pad electrode 293, so as to the upper table of light-emitting device Face (surface of the light-emitting device that can be mounted on independent substrate) can be formed as generally flat.Therefore, by luminous dress Put and be installed to the process of independent substrate and can become easy.
Figure 21 and Figure 22 is namely for description according to the exemplary light-emitting device of some embodiments of patent document Plan and cross-sectional view.Figure 22 shows the cross section of the part corresponding with the line III-III' of Figure 21.
The light-emitting device of Figure 21 and Figure 22 is different from Figure 16 in the configuration aspects of the first contact electrode 230 and insulating barrier 255 With the light-emitting device of Figure 17.Hereinafter, it will the light-emitting device according to this exemplary embodiment is described based on the difference, and And will omit to stacked detailed description.
With reference to Figure 21 and Figure 22, light-emitting device includes the contact contact electrode of electrode 230, second of ray structure 220, first 240th, insulating barrier 250, insulating barrier 260, bulk electrode 271, the second body electrode 273 and insulated support 280.Further Ground, light-emitting device can further include growth substrates (not shown), connection electrode 245 and stress-buffer layer 265.
Light-emitting device includes ray structure 220.In addition, ray structure 220 is may include by by the second conductive-type semiconductor Layer 225 and 223 part of active layer remove and the first conductive-type semiconductor layer 221 are partly exposed to the region in which.By One conductive-type semiconductor layer 221 exposes, and includes the second conductive-type semiconductor layer 225 and active so as to ray structure 220 can have The table top 220m of layer 223.The position of table top 220m is unrestricted.For example, as illustrated, by the first conductive-type semiconductor layer 221 The exposed region of institute can be at least partially around table top 220m.
First contact electrode 230 may be disposed at the region is exposed by the first conductive-type semiconductor layer 221, and can be with first 221 Ohmic contact of conductive-type semiconductor layer.In some embodiments, unlike the exemplary embodiment of Figure 11 and Figure 12, first Contact electrode 230 is arranged at the region is exposed by the first conductive-type semiconductor layer 221.Therefore, the first contact electrode 230 and the Two contact electrodes 240 can be spaced apart.
Insulating barrier 255 partly covers the first contact electrode 230 and the second contact electrode 240, and including respectively by first Contact electrode 230 and the second contact electrode 240 the first partially exposed opening portion 255a and the second opening portion 255b.According to this Exemplary embodiment, as the first contact electrode 230 is arranged at the 221 exposed region of institute of the first conductive-type semiconductor layer, therefore Insulating barrier 255 will not be formed in the form of between the first contact electrode 230 and the second contact electrode 240.Further, since absolutely Edge layer 255 can be formed by performing one-time process in the case of without separating into the first insulating barrier and the second insulating barrier, therefore The manufacture process of light-emitting device can further be simplified.In some embodiments, by insulating barrier be divided into the first insulating barrier and In the case of second insulating barrier, it is desirable to which the mask pattern formation process that patterns insulating barrier respectively is performed twice or more Repeatedly.On the other hand, in this exemplary case of the embodiment, insulating barrier 255 is made up of single insulating barrier 255 or including single Insulating barrier 255, such that it is able to mask pattern formation process is omitted one or more times.
Meanwhile, connection electrode 245 is may be disposed on the second contact electrode 240.In addition, the side surface of connection electrode 245 can Covered by insulating barrier 255.According to this exemplary embodiment, as insulating barrier 255 is made up of single insulating barrier 255 or including single Insulating barrier 255, therefore connection electrode 245 can be positioned at below insulating barrier 255.
However, in the present example embodiment, insulating barrier 255 is not limited to insulation by the meaning that single insulating barrier 255 is constituted The meaning that layer 255 is made up of individual layer.Therefore, insulating barrier 255 can be made up of multilayer or may include multilayer.
Figure 23 (a), Figure 23 (b) and Figure 24 are namely for description according to the exemplary of some embodiments of patent document The plan and cross-sectional view of light-emitting device.
It is different from Figure 11 and Figure 12 in the configuration aspects of ray structure 220 according to the light-emitting device of this exemplary embodiment Light-emitting device, also different from the light-emitting device of Figure 16 and Figure 17, difference is that light-emitting device further includes wavelength convert Unit 295 and the first pad electrode 291 and the second pad electrode 293.Therefore, the light-emitting device according to this exemplary embodiment Light-emitting device of the aspects such as the mutual structural relation between other configurations different from Figure 16 and Figure 17.Then, will mainly to this A little differences are described in detail.The detailed description to similarly configuring will be omitted.
Figure 23 (a) is the plan of the light-emitting device according to this exemplary embodiment, and Figure 23 (b) is for describing hole 220h And first opening portion 260a and the second opening portion 260b position plan, Figure 24 be for diagram with Figure 23 (a) and figure The cross-sectional view of the cross section in the line IV-IV' of 23 (b) corresponding region.
With reference to Figure 23 (a), Figure 23 (b) and Figure 24, light-emitting device include the contact electrode 230 of ray structure 220, first, the Two contact electrodes 240, insulating barrier 250, insulating barrier 260, stress-buffer layer 265, bulk electrode 271, the second body electrode 273 with And insulated support 280.Further, light-emitting device can further include growth substrates (not shown), wavelength conversion unit 295th, the first pad electrode 291, the second pad electrode 293 and stress-buffer layer 265.
Ray structure 220 may include by the second conductive-type semiconductor layer 225 and 223 part of active layer are removed and by the One conductive-type semiconductor layer 221 is partly exposed to the region in which.For example, as illustrated, ray structure 220 may include through Second conductive-type semiconductor layer 225 and active layer 223 and by 221 exposed multiple hole 220h of the first conductive-type semiconductor layer.Hole 220h substantially can be regularly positioned on whole ray structure 220.However, patent document not limited to this, and other embodiment It is also feasible.That is, the form and quantity of hole 220h can carry out various modifications.
In addition, 221 exposed form of the first conductive-type semiconductor layer is not limited to the form of such as hole 220h.For example, can be with Form according to line, the hole of combination and line etc. forms 221 exposed region of the first conductive-type semiconductor layer.
Second contact electrode 240 may be provided on the second conductive-type semiconductor layer 225 and with the second conductive-type semiconductor 225 Ohmic contact of layer.Second contact electrode 240 can be set to the upper surface substantially over the second conductive-type semiconductor layer 225, And can be set to the upper surface of the second conductive-type semiconductor layer 225 is almost completely covered.Second contact electrode 240 can be by whole Monomer above ray structure 220 is formed or including the monomer.In this case, second contact electrode 240 may include corresponding to The open area of the position of multiple hole 220h.Therefore, electric current is supplied uniformly to whole ray structure 220 so that can improve electricity Stream dispersion efficiency.
However, patent document not limited to this, and other embodiments are also feasible.In addition, the second contact electrode 240 Can also be formed by multiple units.
First insulating barrier 250 can partly cover the upper surface of ray structure 220 and the second contact electrode 240.First is exhausted Edge layer 250 can cover the side surface of multiple hole 220h, and including it is partially exposed be arranged on the lower surface of hole 220h The opening portion of one conductive-type semiconductor layer 221.Therefore, opening portion may be positioned to the position corresponding to multiple hole 220h.In addition, the One insulating barrier 250 may include the opening portion for exposing the second part for contacting electrode 240.In addition, the first insulating barrier 250 can be further Cover at least a portion of the side surface of ray structure 220.
First contact electrode 230 can partly cover ray structure 220, and pass through hole 220h and be arranged on corresponding to hole The opening portion of the first insulating barrier 250 at the part of 220h and 221 Ohmic contact of the first conductive-type semiconductor layer.In some enforcements In scheme, can also form the first contact electrode 230 to cover the side surface of ray structure 220.
Second insulating barrier 260 can partly cover the first contact electrode 230, and may include partially exposed first contact electricity The second opening portion 260b of the first opening portion 260a of pole 230 and partially exposed second contact electrode 240.First opening portion Each in 260a and the second opening portion 260b can be formed with plural form.In certain embodiments, opening portion 260a With 260b may be positioned to relative side surface closer to.
Stress-buffer layer 265 is may be provided on the second insulating barrier 260.
Bulk electrode 271 and the second body electrode 273 are may be disposed on ray structure 220, and can be respectively electrically connected to First contact electrode 230 and the second contact electrode 240.Insulated support 280 is arranged on ray structure 220, and at least portion Divide the side surface of nappe electrode 271 and 273.In addition, the first pad electrode 291 and the second pad electrode 293 can be respectively provided with On bulk electrode 271 and the second body electrode 273.Because to insulated support 280 and the first pad electrode 291 and second The description of pad electrode 293 is substantially identical with the description provided with reference to Figure 19 and 20, so will omit to insulated support 280 And first pad electrode 291 and the second pad electrode 293 detailed description.
Wavelength conversion unit 295 is may be provided on the lower surface of ray structure 220.Can provide can be by by wavelength convert list Unit 210 changes the wavelength of light launched from ray structure 220 to implement the light-emitting device of shades of colour light.In addition, wavelength turns Change unit 210 to be made only on the lower surface of ray structure 220, and also extend to the side surface of ray structure 220, and And may be further extended to the side surface of insulated support 280.
Wavelength conversion unit 295 may include the material of the wavelength of convertible light.For example, wavelength conversion unit 295 can be arranged For wherein phosphor interspersion form in the carrier, it is set to monocrystal phosphor sheet form or is arranged with its amount of including The form of son point material.However, patent document not limited to this, and other embodiments are also feasible.
Light-emitting device includes wavelength conversion unit 295, so that the wafer-level package that can launch white light can be provided.
Figure 25 to Figure 39 be some embodiments according to patent document for describe exemplary light-emitting device and its The plan and cross-sectional view of example fabrication method.In the accompanying drawings, (a) and (b) difference being included in identical accompanying drawing Indicate that plan and (b) in cross-sectional view, and each accompanying drawing show the cross section of the line V-V' along (a).It is described below In, will with reference to Figure 25 (a) to Figure 39 (b) describe according to the light-emitting device of each exemplary embodiment of patent document and its Manufacture method.It is omitted from or omits the detailed of the configuration to the configuration described in the exemplary embodiment similar to Fig. 1 to 14 (b) Description, and will be described in detail the configuration of configuration described in the exemplary embodiment different from Fig. 1 to 14 (b).In addition, under In text exemplary embodiment to be described, even if the situation of the method for light-emitting device is manufactured in description based on single ray structure In, the configuration and feature described in above-mentioned example embodiment is equally applicable to the situation to form multiple light-emitting devices.
It is with reference to Figure 25 (a) and Figure 25 (b), conductive including the first conductive-type semiconductor layer 221, active layer 223 and second The ray structure 220 of type semiconductor layer 225 is formed in growth substrates 210.
As long as ray structure 220 can be grown in growth substrates 210, growth substrates 210 are just unrestricted.For example, grow Substrate 210 can be or including Sapphire Substrate, silicon carbide substrates, silicon substrate, gallium nitride substrate or aluminium nitride substrate etc..It is luminous Structure 220 can be using outside such as metal organic chemical vapor deposition (MOCVD), hydride vapour phase epitaxy method (HVPE) or molecular beam Prolong the growth of the methods such as method (MBE).
In addition, though growth substrates 210 and sending out corresponding to single assembly are had been described that in Figure 25 (a) and Figure 25 (b) Photo structure 220, but this exemplary embodiment substantially similarly can be suitable for use with sending out with the growth in growth substrates 210 The situation of the chip of photo structure 220.
Then, with reference to Figure 26 (a) and Figure 26 (b), ray structure 220 is patterned to form at least one table top 220m.
Can be formed by removing the second conductive-type semiconductor layer 225 and active layer 223 by photoetching and etch process part Table top 220m.Forming table top 220m causes the first conductive-type semiconductor layer 221 be partly exposed to the external zones of table top 220m In domain.Table top 220m do not have limited form, on the contrary can have wherein its substantially in the same direction extend (such as Figure 26 It is illustrated in (a)) form.In certain embodiments, table top 220m can be formed with plural form.In this case, it is multiple Table top 220m can be spaced apart from each other.
However, patent document not limited to this, and other embodiments are also feasible.For example, such as Figure 27 (a) and 27 It is illustrated in (b), table top 220m can also have wherein its form as one and including the part being recessed from one side surface Form.For example, as illustrated by Figure 27 (a), table top 220m' can have such form, and wherein which is adjacent to growth substrates The part of 110 side surface is connected to each other and interval region is formed in its another side table for being adjacent to growth substrates 110 In the part in face (being positioned to relative with a side surface).First conductive-type semiconductor layer 221 can be by interval region partly Exposure.The quantity of interval region can be plural form.For example, Figure 27 (a) shows two interval regions and Figure 27 (b) shows Three interval regions.In certain embodiments, more than three interval regions can be formed.In certain embodiments, table top 220m can also have such form, and wherein which includes the multiple grooves for exposing the first conductive-type semiconductor layer 221.In this situation In, it is possible to provide the ray structure 220 of those forms with the exemplary embodiment similar to Fig. 8 A to 9B.
Then, with reference to Figure 28 (a) and Figure 28 (b), the second contact electrode 240 is formed in the second conductive-type semiconductor layer 225 On, such as upper surface of table top 220m it is at least part of on.In addition, the first preliminary insulating barrier 251 can be further formed at sending out On photo structure 220.
Second contact electrode 240 may include metal as above or at least one in conductive oxide.Second contact Electrode 240 be formed as by suitable deposition and patterning process be arranged on table top 220m upper surface it is at least part of on.
The first preliminary insulating barrier 251 is may be formed on ray structure 220, and is formed as except wherein formation second connects The upper surface of the ray structure 220 outside the region of touched electrode 240 covers at least in part.The first preliminary insulating barrier 251 can cover The exposed region of the first conductive-type semiconductor layer of lid 221.In addition, the first preliminary insulating barrier 251 can further cover table top The side surface of 220m.In addition, the first preliminary insulating barrier 251 can partly cover the upper surface of table top 220m.Preliminary first is exhausted The accessible second contact electrode 240 of edge layer 251 is spaced apart with the second contact electrode 240.The first preliminary insulating barrier wherein In the case of 251 are spaced apart with the second contact electrode 240, the second conductive-type semiconductor layer 225 is partly exposed to preliminary the One insulating barrier 251 is contacted between electrode 240 with second.The first preliminary insulating barrier 251 may include SiO2, SiNx or MgF2Deng.Separately Outward, the first preliminary insulating barrier 251 may include multilayer, and including distributed Bragg reflector, in the reflector alternately It is stacked with the material of different refractivity.
Meanwhile, before the first preliminary insulating barrier 251 can contact electrode 240 forming second, forming the second contact electricity Formed after pole 240, or formed during forming for the second stage for contacting electrode 240 wherein.For example, the second contact is electric wherein Pole 240 include conductive oxide layer and be arranged in conductive oxide layer and the reflecting layer including metal in the case of, tentatively The first insulating barrier 251 can after conductive oxide layer is formed on the second conductive-type semiconductor layer 225 and formed reflecting layer Formed before.In this case, conductive oxide layer and 225 Ohmic contact of the second conductive-type semiconductor layer, and can be formed aboutThickness the first preliminary insulating barrier 251.In another exemplary embodiment, the first preliminary insulating barrier 251 May be formed at before forming the second contact electrode 240.In this case, the second contact electrode 240 can be partly led with the second conductivity type Body layer 225 forms Ohmic contact, and including the reflecting layer by made by metal material.In these exemplary embodiments, tentatively The first insulating barrier 251 be formed on including the reflecting layer of metal material before so that prevent from being attributed to reflecting layer with The reduction and the increase of reflecting layer resistance of the light reflectivity that the material between ray structure 220 spreads and causes.In addition, can prevent Include during the reflecting layer of metal material due to not forming the other parts of the second contact electrode 240 wherein being formed In the problem (such as electrical short) that produces of remaining metal material.
Then, with reference to Figure 29 (a) and 29 (b), the first insulating barrier 250 is formed on ray structure 220.First insulating barrier 250 parts cover the first conductive-type semiconductor layer 221, the contact electrodes 240 of table top 220m and second.In addition, the first insulating barrier 250 May include the first opening portion 250a and partially exposed second contact electrode of partially exposed first conductive-type semiconductor layer 221 240 the second opening portion 250b.
First insulating barrier 250 may include the first preliminary insulating barrier 251 described with reference to Figure 28 (a) and 28 (b) and master Want the first insulating barrier 253.Main first insulating barrier 253 can by such as plasma enhanced chemical vapor deposition (PECVD) or The suitable sedimentation such as electron beam evaporation and formed.Herein, main first insulating barrier 253 is being formed with substantially over the After one conductive-type semiconductor layer 221, the contact electrodes 240 of table top 220m and second, first is formed by Patternized technique and be open Portion 250a and the second opening portion 250b, so that the first insulating barrier as described 250 can be provided.Patternized technique may include Photoetching process or stripping technology.Main first insulating barrier 253 may include SiO2, SiNx or MgF2Deng.In addition, main first insulation Layer 253 may include multilayer, and including distributed Bragg reflector, be alternately stacked different refractivity in the reflector Material.In addition, main first insulating barrier 253 can have the thickness of the thickness more than the first preliminary insulating barrier 251.
The quantity of the first opening portion 250a can be at least 1.For example, the first opening portion 250a can be respectively formed at table top On 220m.In certain embodiments, the first opening portion 250a may be formed at a side surface being adjacent to growth substrates 210 At position.Second opening portion 250b can have such shape, and wherein they extend along the direction that wherein table top 220m extends. In certain embodiments, the second opening portion 250b is formed as neighbouring with the long side surface of table top 220m.However, the first opening The position of portion 250a and the second opening portion 250b, size and number not limited to this, and other embodiments be also it is feasible, but May depend on position and carry out various changes etc., body electrode described below 271 and 273 is formed at the position.
Simultaneously, although have been described with wherein second contact electrode 240 be formed on the situation after table top 220m, but It is after table top 220 may be formed at and form the second contact electrode 240.
Then, with reference to Figure 30 (a) and 30 (b), the first contact electrode 230 is formed on the first insulating barrier 250.First contact Electrode 230 can with by exposed first conductive-type semiconductor layer, 221 Ohmic contacts of the first opening portion 250a.In addition, one can be entered Step forms the connection electrode 245 that electrode 240 is contacted by the second opening portion 250b electrical contacts second.
First contact electrode 230 and connection electrode 245 can be formed by known deposition and patterning process, and while shape Into or formed by independent technique.First contact electrode 230 can be formed from the same material with connection electrode 245 or including identical material Expect and formed with multilayer, or formed and/or formed with sandwich construction by different materials.First contact electrode 230 and connection electrode 245 can be spaced apart from each other so that the first contact electrode 230 and the second contact electrode 240 are electrically insulated from each other.
For example, first contact electrode 230 connection electrode 245 or both may include sandwich construction.Sandwich construction can have There is the stacked structure including the first adhesive layer (ohmic contact layer), reflecting layer, barrier layer, antioxidation coating and the second adhesive layer.The Accessible first conductive-type semiconductor layer of one adhesive layer 221, second contact electrode 240 or both, and including Ni, Ti or Cr Deng.Reflecting layer may include the metal with high reflectance, such as Al or Ag etc..Barrier layer can prevent the metal in reflecting layer from mutually expanding Dissipate, formed by the individual layer of Cr, Co, Ni, Pt or TiN, or formed together with the multilayer of Ti, Mo or W by Cr, Co, Ni, Pt or TiN, example Such as, there can be the multi-layer structure of Cr/Ti.Antioxidation coating can prevent other layers for positioning in its lower section from oxidation occurring, and wrap Include the metal material with very strong non-oxidizability.Antioxidation coating may include such as Au, Pt or Ag etc..Second adhesive layer may be adapted to For improving between the second insulating barrier 260 and the first conductive-type semiconductor layer 221 (or the second insulating barrier 260 and connection electrode 245 Between) bonding, and may include such as Ti, Ni or Cr etc..However, patent document not limited to this, and other embodiments It is also feasible.
In certain embodiments, connection electrode 245 can also be omitted.As illustrated by Figure 30 (a) and 30 (b), wherein In the case of omitting connection electrode 245, electrode 240 is contacted by the second opening portion 250b exposures second.Therefore, in this situation In, the second body electrode 173 can the contact electrode 240 of directly contact second.
Then, with reference to Figure 31 (a) and 31 (b), forming part cover first contact electrode 230 and connection electrode 245 the Two insulating barriers 260.Second insulating barrier 260 may include the 3rd opening for exposing the first contact electrode 230 and connection electrode 245 respectively Portion 260a and the 4th opening portion 260b.In addition, stress-buffer layer 265 can be further formed on the second insulating barrier 260.
Second insulating barrier 260 can pass through plasma enhanced chemical vapor deposition (PECVD) or electron beam evaporation etc. Known sedimentation and formed.Herein, the second insulating barrier 260 is being formed with substantially over the first contact 230 He of electrode After connection electrode 245, the 3rd opening portion 260a and the 4th opening portion 260b can be formed in the second insulation by Patternized technique In layer 260 so that the second insulating barrier as described 260 can be provided.Patternized technique may include photoetching process or stripping technology. Second insulating barrier 260 may include SiO2, SiNx or MgF2Deng.In addition, the second insulating barrier 260 may include multilayer, and including distribution Formula Bragg reflector, is alternately stacked the material of different refractivity in the reflector.The superiors of the second insulating barrier 260 can Formed by SiNx or including SiNx.The superiors of the second insulating barrier 260 are made up of SiNx or including SiNx, thus can be more effective Prevent moisture from penetrating into into ray structure 220.In addition, the second insulating barrier 260 can have the thickness less than the first insulating barrier 250 Thickness, and can have about 0.8 μm of thickness bear voltage to guarantee insulation.However, patent document not limited to this, and its Its embodiment is also feasible.
3rd opening portion 260a and the 4th opening portion 260b expose the first contact electrode 230 and connection electrode 245 respectively, by This causes to carry donor electrode 171 and 173 and can be electrically connected to the first contact electrode 230 and the second contact electrode 240 by which Path.
Stress-buffer layer 265 can be formed by methods such as sedimentation, spin-coating methods, and can be with the second insulating barrier 260 Pattern together.Therefore, stress-buffer layer 265 may include corresponding to the 3rd opening portion 260a and the 4th opening portion 260b that The opening portion formed at the position of a little positions.
With reference to Figure 33 (a) to Figure 34 (b), bulk electrode 271,283 shape of the second body electrode 273 and lower insulated support Into on the second insulating barrier 260.
With reference to Figure 33 (a) and 33 (b), limited using the mould 310 for forming body electrode and wherein formed bulk electrode 271 and second body electrode 273 region so that bulk electrode 271 and the second body electrode 273 can be formed.For forming body electricity The mould 310 of pole can be or including the mould of patternable, and may include such as light-sensitive polyimide, SU-8, for electricity The photoresist or desciccator diaphragm of plating.
Bulk electrode 271 and the second body electricity can be formed using galvanoplastic, sedimentation, stipple or silk screen print method etc. Pole 273.Forming bulk electrode 271 and the second body electrode 273 may include to form the first metal layer 271s and second metal layer 273s.The first metal layer 271s and second metal layer 273s can be respectively positioned under bulk electrode 271 and the second body electrode 273 Face, to contact the first contact electrode 230, connection electrode 245, insulating barrier 250 and 260 and stress-buffer layer 265.First gold medal Category layer 271s and second metal layer 273s may depend on the method to form body electrode 271 and body electrode 273 and change.
With reference to Figure 34 (a) and 34 (b), remove for forming the mould 310 of body electrode, and formed The lower insulated support 283 of the side surface of body electrode 271 and the second body electrode 273.Lower insulated support 283 can be by such as Perform the techniques available of such as silk screen print method or spin-coating method and formed and carried on the material of epoxy molding plastic (EMC) or Si resins For.
The insulated support under formation can be further included according to the method for the manufacture light-emitting device of this exemplary embodiment The upper surface and lower insulated support 283 of bulk electrode 271 and the second body electrode 273 are planarized after 283.Therefore, The upper surface of bulk electrode 271 and the second body electrode 273 is formed as substantially concordant with lower insulated support 283.First The planarization of body electrode 271 and the second body electrode 273 and lower insulated support 283 is may include using polishing, splicing processes, change Learn mechanical polishing (CMP) method or at least one in Wet-type etching.
Then, will be described in further detail to form bulk electrode 271 and the second body electrode 273 and lower insulated support 283 technique.In the case of bulk electrode 271 and the second body electrode 273 are formed using plating wherein, the first metal layer 271s and second metal layer 273s are formed in the whole surface of stress-buffer layer 265, the 3rd are opened by the method for such as sputtering method Above oral area 260a and the 4th opening portion 260b.The first metal layer 271s and second metal layer 273s may include Ti, Cu, Au or Cr Deng, and it is used as bottom projections metallization (UMB) layer or seed metal.For example, the first metal layer 271s and second metal layer 273s can have the stacked structure for including Ti/Cu.Then, formed on the first metal layer 271s and second metal layer 273s and covered Mould.Herein, mask could be for the mould 310 to form body electrode.Mould 310 for forming body electrode shelters correspondence In the part in the region for wherein forming lower insulated support 283, and opening wherein forms bulk electrode 271 and the second body electricity The region of pole 273.Then, bulk electrode 271 and the second body electrode 273 are formed at the open area of mask by electroplating technology In.Herein, form bulk electrode 271 and the second body electrode 273 can use the first metal layer 271s and the second gold medal respectively Category layer 273s is formed as seed crystal.Then, removed by etch process and used for forming the mould 310 of body electrode and being located at In formed body electrode mould 310 below bulk electrode 271 and the second body electrode 273 part so that first can be provided Body electrode 271 and the second body electrode 273.Therefore, the first metal layer 271s and second metal layer 273s can be kept at first Below body electrode 271 and the second body electrode 273.
Description is wherein formed the situation of bulk electrode 271 and the second body electrode 273 using silk screen print method.UBM layer Stress-buffer layer 265, the 3rd opening portion are formed in by the deposition and patterning process of such as sputtering method or deposition and stripping method 260a and the 4th opening portion 260b it is at least part of on.UBM layer can be formed at On the region of electrode 273, and may include (Ti or TiW) layer and the individual layer including Cu, Ni or Au or its combination layer.For example, UBM layer can have the stacked structure of Ti/Cu.UBM layer may correspond to the first metal layer 271s and second metal layer 273s.Then, Form mask.The mask shelters the part corresponding to the region for wherein forming lower insulated support 283, and opening is wherein formed The region of bulk electrode 271 and the second body electrode 273.Then, such as the material of Ag cream, Au cream or Cu cream passes through serigraphy During technique is formed at open area and harden.Then, mask is removed by etch process so that bulk electrode can be provided 271 and the second body electrode 273.
Bulk electrode 271 includes from bulk electrode 271 towards the side surface of the second body electrode 273 is projected first dashing forward Go out portion 271s and the second protuberance 271b for further projecting from the first protuberance 271s towards the second body electrode 273.Second body electricity Pole 273 includes the first recess 273a and recessed from first of the side surface depression from the second body electrode 273 towards bulk electrode 271 Second recess 273b of portion 273a depressions.Therefore, the horizontal cross-sectional area of bulk electrode 271 can be more than the second body electrode 273 horizontal cross-sectional area.
In addition, protuberance 271a and 271b form to engage with recess 273a and 273b respectively.First protuberance 271a can The part being recessed by the first recess 273a is located corresponding to, and the second protuberance 271b is may be positioned to corresponding to by the second recess The part of 273b depressions.Therefore, the spacer between the side surface of 273 face each other of bulk electrode 271 and the second body electrode From can substantial constant.In addition, the second protuberance 271b can have the width less than the first protuberance 271a.
Second protuberance 271b can have it is variously-shaped, and can be by polygon, circular or with the ellipse of inscribed circle 200ic Circular at least a portion is formed or including at least a portion, and the inscribed circle is centrally located at the core of light-emitting device At 200c and diameter is for about 50 μm or more greatly to 150 μm or less.For example, as described, the second protuberance 271b can have Including the shape of the circular arc corresponding to inscribed circle 200ic, the inscribed circle is centrally located at the core 200c of light-emitting device. First recess 273a and the second recess 273b can be with those shapes corresponding to the first protuberance 271a and the second protuberance 271b The shape of shape.
Interval region along bulk electrode 271 and the part facing with each other wherein of the second body electrode 273 extends Dummy line D6-D6' can have one or more sweeps.Although dummy line D6- with one or more sweeps D6' can derive from the shape and layout of protuberance 271a and 271b and recess 273a and 273b, but patent document is not limited In this, and other embodiments are also feasible.The beginning and end of dummy line D6-D6' is may be provided on the same line.
Meanwhile, the central part that the protuberance 271a and 271b of bulk electrode 271 can in vertical direction with light-emitting device 200c is divided to overlap.In the present example embodiment, the second protuberance 271b is shaped to polygon, circle or has inscribe At least a portion of the ellipse of circle 200ic, the origin of the inscribed circle or is centrally located at the core 200c of light-emitting device. In this case, the centralized positioning of inscribed circle 200ic is into Chong Die with the core 200c of light-emitting device in vertical direction.Cause This, can prevent the generation in crack in the technique for manufacture light-emitting device in the insulated support 280 and to the insulated support 280 damage, thus improves the fabrication yield of light-emitting device.This will be described in greater detail below.In addition, protuberance 271a and 271b are Chong Die with the core 200c of light-emitting device in vertical direction, so that insulation can be effectively prevented There is crack and damage in support member 280.Therefore, can improve light-emitting device resist external impact intensity, and can further improve to The anti-intensity for being attributed to from outside stress for applying etc. the distortion impulse force for causing.For example, the core 200c of light-emitting device Outer peripheral areas are coated with bulk electrode 271 in vertical direction, so that the machinery of light-emitting device more effectively can be improved Stability.
Then, with reference to Figure 35 (a) and 35 (b), can further on lower insulated support 283 and body electrode 271 and 273 Form the first pad electrode 291, the second pad electrode 293 and upper insulated support 281.
First pad electrode 291 and the second pad electrode 293 can be formed in first by deposition and Patternized technique respectively On body electrode 271 and the second body electrode 273.Upper insulated support 281 can surround the first pad electrode 291 and the second pad electrode 293 side surface.Insulated support 281 in formation so that can provide including upper insulated support 281 and lower insulated support 283 insulated support 280.Upper insulated support 281 can by formed with 283 identical material of lower insulated support or including with 283 identical material of lower insulated support, or be made up of the material different from lower insulated support 283 or including different from lower exhausted The material of edge support member 283.
Then, with reference to Figure 36, growth substrates 210 can be separated with ray structure 220.Growth substrates 210 can be shelled using laser At least one in method, chemical stripping method, hot stripping method or stress stripping method is separated simultaneously with the first conductive-type semiconductor layer 221 And be removed from.After growth substrates 210 are separated, by separating 210 exposed first conductive-type semiconductor of growth substrates The surface of layer 221 can by dry etching, wet process, physical method, chemical method or physico-chemical process extremely Few one kind is partly removed.
Meanwhile, temporary substrates (not specifying) can be bound to the relative of growth substrates 210 before growth substrates 210 are removed Side.In the technique for separating growth substrates 210, temporary substrates are used to support ray structure.Therefore, return during ray structure can be suppressed The defect that the stress and stress that cause is produced during growth substrates 210 are separated causes is produced.For example, growth substrates wherein In the case of the big region in wafer cell is separated into manufacture multiple ray structures, 220 grade of ray structure is separating growth lining Would be possible to produce crack during bottom 210 or damage to cause there is in light-emitting device defect.Temporary substrates can prevent (example Such as) the defect of the light-emitting device in this situation.For example, as illustrated by Figure 37 (a) and 37 (b), multiple light-emitting devices are being manufactured In the case of, temporary substrates 320 can be used.
In the case of the multiple light-emitting devices in manufacture wafer cell, can be after growth substrates 210 be separated partly Part between removing unit device region.As illustrated in Figure 37 (a), in the case of multiple light-emitting devices are manufactured, can be from The wafer W 1 for wherein separating growth substrates 210 is arranged on temporary substrates 320.Herein, wafer W 1 may include multiple units Border L1 between device UD, and multiple cell arrangement UD can be defined to separated region 331.As illustrated by Figure 37 (b), portion Divide and remove separated region 331 so that separating tank 333 can be formed between multiple cell arrangement UD.Separating tank 333 can be by passing through The method of such as dry etching removes the first conductive-type semiconductor layer 221 at least in part and is formed.It is separated in wafer W 1 Before unit light-emitting device, the separating tank 333 which part ground removes the first conductive-type semiconductor layer 221 is formed, so that Can prevent from producing chip or crack wafer W 1 is separated into during unit light-emitting device in ray structure 220.However, The process to form separating tank 333 can be omitted.
Then, with reference to Figure 38, wavelength conversion unit 295 can be formed on ray structure 220.In addition, turning wavelength is formed Before changing unit 295, the roughness that can pass through the surface of increase ray structure 220 further forms rough surface 220R.Therefore, Light-emitting device as illustrated by Figure 38 can be provided.
Wavelength conversion unit 295 may include the material of the wavelength of convertible light.For example, wavelength conversion unit 295 can be arranged For wherein phosphor interspersion form in the carrier, it is set to monocrystal phosphor sheet form or is arranged with its amount of including The form of son point material.However, patent document not limited to this, and other embodiments are also feasible.It is exemplary according to this The light-emitting device of embodiment includes wavelength conversion unit 295, so that the wafer-level package that can launch white light can be provided.Wavelength Converting unit 295 can not be made only on the upper surface of ray structure 220, and also extends to the side surface of ray structure 220, And may be further extended to the side surface of insulated support 280.Wavelength conversion unit 295 can pass through coating and hardening process, splash Plating method or other known method are formed.
Rough surface 220R can pass through at least one shape in wet process, dry etching or electrochemical etching process Into, and the shapes such as the etching method of etching solution of KOH and NaOH can be included using such as Optical Electro-Chemistry (PEC) etching method, use Into.Therefore, ray structure 220 may include to be formed on the surface of the first conductive-type semiconductor layer 221 and have μm to nm levels Protuberance, recess or both.The light extraction effect of the light launched by ray structure 220 can be improved by rough surface 220R Rate.
Meanwhile, after wavelength conversion unit 295 is formed, can further form the surface at least partly covering light-emitting device Passivation layer (not shown).
Meanwhile, the light-emitting device shown in Figure 38 can be made up of the wafer W 2 including multiple cell arrangement UD.With reference to figure 39 (a) is to 39 (c), illustrated in such as Figure 39 (a), can prepare including the multiple cell arrangement UD's for being bound to temporary substrates 320 Wafer W 2.Wafer W 2 is may be provided on the first support member 340 so that separation process is used.First support member 340 may include cutting Band.Then, with reference to Figure 39 (b), temporary substrates 320 are separated with wafer W 2 and wafer W 2 is cut along defiber L2.Defiber L2 Corresponding to the border between multiple cell arrangement UD.Then, can pick up with the detached multiple cell arrangement UD of plural form and Which is transferred to the second support member 340a to perform down one technique from the first support member 340.Second support member 340a can also be wrapped Include cutting belt.Herein, as illustrated by Figure 39 (c), in the case of the second support member 340a is cutting belt wherein, pick up Taking a cell arrangement UD1 may include a unit using the following knock pin 350 of cutting belt (the second support member 340a) Device UD1 is pushed up.
In the process, knock pin 350 applies impact to a part for the bottom of light-emitting device.Such as Figure 39And Figure 40 It is illustrated in (a) and 40 (b), the part of the impact that stress can apply from the pin point by knock pin 350 along vertical direction C1 Extend in PP.Therefore, stress can concentrate on the part of the impact applied along vertical direction C1 with the pin point by knock pin 350 In the region that PP is overlapped.Herein, by pin point apply impact part PP can substantially with light-emitting device central part 200c is divided to overlap.Insulated support 280 is arranged in vertical direction C1 the core 200c weights with light-emitting device wherein The insulation in the case of at folded part, being particularly arranged between bulk electrode 271 and the second body electrode 273 wherein is propped up In the case of a part for support member 280 is Chong Die with the core 200c of light-emitting device in vertical direction C1, insulated support Crack is produced in 280 easily so that defect can be produced in Manufactured light-emitting device.According to this exemplary embodiment, such as Figure 40 A illustrated in () and 40 (b), bulk electrode 271 (for example, protuberance 271a and 271b) is may be disposed in vertical direction C1 Part (correspond essentially to the part PP of the impact by the pin point applied) place Chong Die with the core 200c of light-emitting device, So that the defect of the insulated support 280 that knock pin 350 causes can be effectively prevented.In addition, the second protuberance wherein 271 is by polygon, circle or (its origin is that the core 200c and diameter of light-emitting device are for about with inscribed circle 200ic 50 μm are bigger) it is oval formed in the case of, absorb and discharge the stress for being attributed to that the impact of knock pin 350 is produced, So that can more efficiently prevent from producing the defect caused by the stress for being attributed to applying to insulated support 280.
In addition, according to this exemplary embodiment, it is possible to provide sending out with excellent mechanical stability and high-heating radiation efficiency Electro-optical device.
According to each embodiment of patent document, growth substrates are separated so that can improve the light efficiency of light-emitting device And radiation efficiency.In addition, including supporting member according to the light-emitting device of patent document, pad is formed on supporting member, Replace the secondary substrate of wafer scale simultaneously, so that Stability Analysis of Structures can be guaranteed in the case of without growth substrates and secondary substrate Property.In addition, can prevent metallic element from diffusing in soldering paste according to the light-emitting device of patent document so which can be straight using soldering paste Connect installation on a printed circuit.In addition, with the method for the manufacture light-emitting device according to patent document, can manufacture with upper State the light-emitting device of effect.
Additionally, it is provided including the light-emitting device of the first and second body electrodes respectively with protuberance and recess.Therefore, may be used Suppress the generation of the lamination between body electrode and insulated support, and the mechanical stability of raising insulated support, thus So that the reliability of light-emitting device can be improved.Additionally, it is provided being carried by forming the body electrode with varying level cross-sectional area The light-emitting device of high-heating radiation efficiency.
In addition, the protuberance of bulk electrode is arranged in the vertical direction position Chong Die with the core of light-emitting device Place so that the mechanical stability of light-emitting device can be improved, and be effectively prevented process of the insulated support in manufacture light-emitting device Middle generation defect or damage so that the fabrication yield of light-emitting device can be improved.Figure 36 is applied according to patent document The decomposition diagram of the exemplary luminaire of the light-emitting device of some embodiments.
With reference to Figure 41, diffuser cap 1010, light-emitting diode (LED) module 1020 and master are included according to the luminaire of this embodiment Body 1030.Main body 1030 can accommodate light-emitting diode (LED) module 1020, and diffuser cap 1010 may be provided in main body 1030 to cover The upside of light-emitting diode (LED) module 1020.
As long as main body 1030 can be accommodated to the power supply of light-emitting diode (LED) module 1020 and simultaneously and support light-emitting diode (LED) module 1020, the main body just can have any shape.For example, as it is shown in the figures, main body 1030 may include main body cover 1031, power supply 1033rd, outer casing of power supply 1035 and power connection part 1037.
Power supply 1033 is contained in outer casing of power supply 1035 to be electrically connected to light-emitting diode (LED) module 1020, and may include to A few IC chip.IC chip can adjust, the electric power supplied to light-emitting diode (LED) module 1020 is modified or controlled.Outer casing of power supply 1035 can accommodate and Power Support 1033.The outer casing of power supply 1035 for being wherein fixed with power supply 1033 may be provided at main body cover In 1031.Power connection part 1037 is arranged at the lower end of outer casing of power supply 1035 and is coupled to the lower end.Therefore, power supply connects Socket part points 1037 is electrically connected to the power supply 1033 in outer casing of power supply 1035, and can be used as electric power and can pass through wherein from external electrical Source is supplied to the path of power supply 1033.
The light emitting diode 1021 that light-emitting diode (LED) module 1020 includes substrate 1023 and is arranged on substrate 1023.Send out Optical diode module 1020 may be provided at the top of main body cover 1031 and be electrically connected to power supply 1033.
Any substrate that can support light emitting diode 1021 can be used without limitation as substrate 1023.Example Such as, substrate 1023 may include the printed circuit board (PCB) for forming cross tie part above.Substrate 1023 can be with corresponding to being formed in outside main body Sentence the shape of the standing part for being stably fixed to main body cover 1031 in the top of shell 1031.Light emitting diode 1021 may include At least one of light emitting diode and the light-emitting device according to above-described embodiment.
Diffuser cap 1010 is arranged on light emitting diode 1021 and can be fixed to main body cover 1031 to cover luminous two Pole pipe 1021.Diffuser cap 1010 can be formed by light transmissive material or including light transmissive material, and can pass through to adjust the shape of diffuser cap 1010 The light orientation of shape and optical transmittance adjustment luminaire.Thus, the purposes and application depending on luminaire can be by diffuser cap 1010 be revised as it is variously-shaped.
Figure 42 is cutting for the exemplary display devices of the light-emitting device for applying some embodiments according to patent document Face figure.
Display floater 2110 is included according to the display device of this embodiment, to the back light unit of 2110 supply light of display floater And support the panel guider of the lower edge of display floater 2110.
Display floater 2110 is not particularly restricted, and can be the liquid crystal panel for example including liquid crystal layer.Grid drives Dynamic PCB can be further disposed at the edge of display floater 2110 to supply drive signal to gate line.Herein, grid drives Dynamic PCB 2112 and 2113 is may be formed in thin film transistor substrate, rather than is formed on single PCB.
Back light unit includes light source module, and which includes at least one substrate and multiple light emitting diodes 2160.Back light unit Bottom 2180, reflector plate 2170, diffuser plate 2131 and optical sheet 2130 can be further included.
Bottom 2180 can be opened to accommodate substrate, light emitting diode 2160, reflector plate 2170, diffuser plate at side thereon 2131 and optical sheet 2130.In addition, bottom 2180 can be coupled to panel guider.Substrate is may be provided at below reflector plate 2170 And then surrounded by reflector plate 2170.It is to be understood, however, that other embodiments are also feasible.When reflecting material is coated with When in its surface, substrate is may be provided on reflector plate 2170.In addition, in this embodiment, multiple substrates can be set to each other It is parallel.It is to be understood, however, that other embodiments are also feasible, and light source module may include single substrate.
Light emitting diode 2160 may include light emitting diode and according at least in the light-emitting device of above-described embodiment It is individual.Light emitting diode 2160 can be preferably arranged regularly around on substrate with predetermined pattern.In addition, lens 2210 be arranged on each luminous two The uniformity of the light launched from multiple light emitting diodes 2160 with raising in pole pipe 2160.
Diffuser plate 2131 and optical sheet 2130 are may be provided on light-emitting device 2160.Light from the transmitting of light-emitting device 2160 can Pass through diffuser plate 2131 in the form of light sheets and optical sheet 2130 is supplied to display floater 2110.
In this way, the display according to this embodiment can be applicable to according to the light emitting diode of the embodiment of patent document The direct escope of device.
Figure 43 is cutting for the exemplary display devices of the light-emitting device for applying some embodiments according to patent document Face figure.
The display floater of image shown above is included according to the display device of this embodiment, and is arranged on display floater At 3210 rear side and emit light into the back light unit on rear side of this.In addition, display device includes supporting display floater 3210 simultaneously And the framework 240 of receiving back light unit, and the lid 3240 and 3280 for surrounding display floater 3210.
Display floater 3210 is not particularly restricted, and can be or including the liquid crystal surface for example including liquid crystal layer Plate.Raster data model PCB can be further disposed at the edge of display floater 3210 to supply drive signal to gate line.Herein In, raster data model PCB is may be formed in thin film transistor substrate, rather than is formed on single PCB.Display floater 3210 be by Lid 3240 and 3280 at being disposed thereon side and downside is fixed, and the lid 3280 being arranged at the downside of display floater 3210 can It is coupled to back light unit.
Include the lower cover 3270 partially opened at side thereon, be arranged on to the back light unit of 3210 supply light of display floater The light source module at side inside lower cover 3270, and be aligned parallel to light source module and point-like light is converted to into sheet The light guide plate 3250 of light.In addition, can further include to be arranged on light guide plate 3250 to incite somebody to action according to the back light unit of this embodiment Light spreads out and collects the optical sheet 3230 of light, and is arranged at the downside of light guide plate 3250 and reflects towards display floater 3210 In the reflector plate 3260 of the light for travelling upwardly downwards of light guide plate 3250.
Light source module include substrate 3220 and be arranged on constant space on a surface of substrate 3220 multiple Optical diode 3110.Can use without limitation and can support light emitting diode 3110 and be electrically connected to any of its Substrate is used as substrate 3220.For example, substrate 3220 may include printed circuit board (PCB).
Light emitting diode 3110 may include the luminous dress of light emitting diode and the embodiment according to above-mentioned patent document At least one of put.The light launched from light source module is entered light guide plate 3250 and is supplied to display by optical sheet 3230 Panel 3210.The point-like light launched from light emitting diode 3110 is converted to light sheets by light guide plate 3250 and optical sheet 3230.
In this way, the peripheral type that can be applicable to the display according to this embodiment according to the light emitting diode of embodiment shows Show device.
Figure 44 is the sectional view of the exemplary headlight of the light-emitting device for applying some embodiments according to patent document.
With reference to Figure 44, headlight includes lamp body 4070, substrate 4020, light emitting diode 4010 and cover plate lens 4050.Before Lamp can further include heat-sink unit 4030, bracing frame 4060 and connecting elements 4040.
Substrate 4020 is fixed and is arranged on above lamp body 4070 by bracing frame 4060.Can make without limitation With any component of light emitting diode 4010 can be supported as substrate 4020.For example, substrate 4020 can be or including having The substrate of conductive pattern, such as printed circuit board (PCB).Light emitting diode 4010 is arranged on substrate 4020 and by substrate 4020 Support and fixed.In addition, light emitting diode 4010 can be electrically connected to external power source by the conductive pattern of substrate 4020.In addition, sending out Optical diode 4010 may include light emitting diode and according in the light-emitting device of the embodiment of above-mentioned patent document at least One.
Cover plate lens 4050 are arranged on from light emitting diode 4010 on the path of the light launched.For example, such as institute in accompanying drawing Show, cover plate lens 4050 can be spaced apart with light emitting diode 4010 by connecting elements 4040, and may be provided at supply from send out On the direction of the light launched in optical diode 4010.By cover plate lens 4050, the orientation angle of the light launched by headlight is can adjust And/or color.On the other hand, connecting elements 4040 is arranged to cover plate lens 4050 are fixed to substrate 4020 and is sent out while surrounding Optical diode 4010, and therefore can be used as providing the photoconduction of light emitting path 4045.Connecting elements 4040 can be by light reflecting material Formed or including light reflecting material, or be coated with light reflecting material.On the other hand, heat-sink unit 4030 may include fin 4031 And/or radiator fan 4033, and the heat dissipation produced when light emitting diode 4010 is run.
In this way, the display according to this embodiment can be applicable to according to the light emitting diode of the embodiment of patent document The headlight of device, the headlight for being particularly used for vehicle.
Although each exemplary embodiment of patent document is hereinbefore described, patent document is not limited to State respective examples embodiment and feature.By repairing that the combination and replacement of the technical characteristic described in exemplary embodiment are carried out Change and be included in the scope of patent document, and the feelings of the spirit of the patent document limited in without departing from such as claims Various modifications and change can be carried out under condition.

Claims (23)

1. a kind of light-emitting device, including：
Ray structure, which includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and is arranged on described first leading Active layer between electric type semiconductor layer and second conductive-type semiconductor layer；
First contact electrode and the second contact electrode, which is arranged on above the ray structure, the first and second contacts electricity Pole respectively with the first and second conductive-type semiconductor layers Ohmic contact；
Insulating barrier, which will be the described first and second contact electrodes insulated from each other and at least partly cover described first and second and connect Touched electrode；
Stress-buffer layer, which is arranged on the insulating layer；
Bulk electrode and the second body electrode, which is arranged on above the ray structure and the stress-buffer layer, and described first The first and second contacts electrode is respectively electrically connected to the second body electrode；And
Insulated support, which covers the side surface of the first and second bodies electrode and exposes first He at least in part The upper surface of the second body electrode,
Wherein described first body electrode includes from the side surface of the bulk electrode protrusion projected towards the second body electrode Portion, and
The second body electrode includes from the side surface of the second body electrode the recess being recessed.
2. light-emitting device according to claim 1, wherein the protuberance is engaged with the recess.
3. light-emitting device according to claim 1, wherein the protuberance is with from the side of the bulk electrode The width of the surface change on surface to the protuberance.
4. light-emitting device according to claim 1, wherein the recess is with the side table from the second body electrode The width of the surface change in face to the recess.
5. light-emitting device according to claim 1, wherein the first body electrode includes one or more Additional bumps And the second body electrode includes one or more additional wells, and one or more of Additional bumps with it is one or Multiple additional well engagements.
6. light-emitting device according to claim 1, wherein the insulating barrier includes the first and second insulating barriers,
First insulating barrier partly covers the second contact electrode and leads including respectively partially exposing described first First opening portion and the second opening portion of electric type semiconductor layer and the second contact electrode,
The first contact electrode partly covers first insulating barrier, and
Second insulating barrier partly covers the first contact electrode and including respectively partially exposing first He 3rd opening portion and the 4th opening portion of the second contact electrode.
7. light-emitting device according to claim 6, further includes to be arranged on the second contact electrode and described second Connection electrode between body electrode, wherein the connection electrode includes the material identical material that electrode is contacted with described first.
8. light-emitting device according to claim 6 a, wherein part for first insulating barrier is between described first and Between two contact electrodes.
9. light-emitting device according to claim 1, further includes to be arranged on the connection above the second contact electrode Electrode,
Wherein described insulating barrier includes exposing respectively the first opening portion of the first contact electrode and the connection electrode and the Two opening portions.
10. light-emitting device according to claim 9, wherein the ray structure is disposed partially to exposure described first leading Electric type semiconductor layer, and
The first contact electrode is arranged on above exposed first conductive-type semiconductor layer.
11. light-emitting devices according to claim 1, wherein the ray structure exposes described with being arranged to forming part Multiple holes of one conductive-type semiconductor layer, and
The first contact electrode is electrically connected to first conductive-type semiconductor layer by the plurality of hole.
12. light-emitting devices according to claim 1, further include to be separately positioned on the first and second bodies electrode First pad electrode and the second pad electrode in face,
Wherein described insulated support covers the part of the upper surface of the first and second bodies electrode and surrounds described The side surface of the first and second pad electrodes.
13. light-emitting devices according to claim 12, wherein first pad electrode being not disposed on the protuberance Above.
14. light-emitting devices according to claim 12, wherein first and second pad electrode have it is substantially the same Surface area.
15. light-emitting devices according to claim 1, further include to be arranged on above the lower surface of the ray structure Wavelength conversion unit.
16. light-emitting devices according to claim 1, wherein the first and second bodies electrode is between substantially constant distance Separate.
17. light-emitting devices according to claim 1, wherein the first body electrode has more than the second body electrode Area.
18. light-emitting devices according to claim 1, wherein the first body electrode is included from the attached of protuberance protrusion Plus protuberance, and
The second body electrode includes the additional well from recess depression.
19. light-emitting devices according to claim 18, wherein the Additional bumps are luminous with described in vertical direction The core of device is overlapped.
20. light-emitting devices according to claim 18, wherein the Additional bumps have includes polygon, circular or tool At least a portion having in the ellipse of inscribed circle, the inscribed circle have in the central part office of the light-emitting device The heart and about 50 μm or bigger diameter.
A kind of 21. light-emitting devices, including：
Ray structure, which includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and is arranged on described first leading Active layer between electric type semiconductor layer and second conductive-type semiconductor layer；
First contact electrode and the second contact electrode, which is arranged on above the ray structure, the first and second contacts electricity Pole respectively with the first and second conductive-type semiconductor layers Ohmic contact；
Insulating barrier, will be the described first and second contact electrodes insulated from each other and cover described first and second at least in part and connect Touched electrode；
Bulk electrode and the second body electrode, which is arranged on the ray structure and the insulating layer, and described first and Disome electrode is respectively electrically connected to the first and second contacts electrode；And
Insulated support, which covers the side surface of the first and second bodies electrode and exposes first He at least in part The upper surface of the second body electrode,
Wherein described first and second bodies electrode is arranged to face to each other and along interval region in first and second body Dummy line is formed between electrode, the dummy line has sweep, and
The bulk electrode has the area of the area more than the second body electrode.
22. light-emitting devices according to claim 21, wherein the beginning and end of the dummy line is arranged on the same line On.
A kind of 23. light-emitting devices, including：
Ray structure, which includes the first conductive-type semiconductor layer, the second conductive-type semiconductor layer and is arranged on described first leading Active layer between electric type semiconductor layer and second conductive-type semiconductor layer；
First contact electrode and the second contact electrode, which is arranged on above the ray structure, the first and second contacts electricity Pole respectively with the first and second conductive-type semiconductor layers Ohmic contact；
Insulating barrier, which will be the described first and second contact electrodes insulated from each other and cover described first and second at least in part Contact electrode；
Bulk electrode and the second body electrode, which is arranged on the insulating layer, and the first and second bodies electrode is electric respectively It is connected to the first and second contacts electrode；And
Insulated support, which covers the side surface of the first and second bodies electrode and exposes first He at least in part The upper surface of the second body electrode,
Wherein described first body electrode includes from the side surface of the bulk electrode first projected towards the second body electrode Protuberance and the second protuberance projected from first protuberance,
The second body electrode includes from the side surface of the second body electrode the first recess being recessed and further from described the Second recess of one recess depression, and
Second protuberance is shaped at least a portion for including polygon, circle or the ellipse with inscribed circle, its Described in inscribed circle be centrally located at the core of the light-emitting device.
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Cited By (5)

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