CN106535501A - Hole metallizing method for circuit board with high ratio of thickness to radial dimension - Google Patents
Hole metallizing method for circuit board with high ratio of thickness to radial dimension Download PDFInfo
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- CN106535501A CN106535501A CN201610899383.XA CN201610899383A CN106535501A CN 106535501 A CN106535501 A CN 106535501A CN 201610899383 A CN201610899383 A CN 201610899383A CN 106535501 A CN106535501 A CN 106535501A
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- Prior art keywords
- hole
- thickness
- wiring board
- sputtering
- diameter ratio
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/104—Using magnetic force, e.g. to align particles or for a temporary connection during processing
Abstract
The invention provides a hole metallizing method for a circuit board with a high ratio of thickness to radial dimension, and solves problems that there is no tin layer for protecting the hole bottom after etching, there is no copper in the hole and thereby the circuit board is caused to be discarded because a metalized back drill hole with the high ratio of thickness to radial dimension is relatively deep and a tin layer is difficult to set at the bottom of the hole in a coating manner after pattern electroplating. Therefore, the invention proposes the method for improving the no-copper condition of a metalized back drill hole of the circuit board with the high ratio of thickness to radial dimension. The invention can effectively control the thickness of hole wall copper, and the thickness can be controlled. The method can avoid the material waste caused by the normally-used thick copper technology in the prior art, can enable the surface copper layer of the hole wall to be uniform in thickness, enables the surface to be flat, and can meet the requirements of the performances of a precise circuit element circuit board. The method is simple, is advanced in technology, improves the electroplating current density, shortens the electroplating time, improves the deep electroplating capability, and effectively reduces the pollution caused by electroplating.
Description
Technical field
The invention belongs to wiring board processing technique field, and in particular to a kind of hole metallization side of high thickness to diameter ratio wiring board
Method.
Background technology
The hole metallization of wiring board is referred to so that
The top layer of wiring board is connected with each other with bottom.The hole metallization of wiring board is realized by the way of Traditional DC plating generally.With
The development of high speed transmission technology, wiring board capacity is continuously increased, thus the number of plies of wiring board is continuously increased, corresponding wiring board
Thickness is continuously increased, meanwhile, in order to reduce the loss of through hole as far as possible, wiring board through-hole aperture is less and less, so as to bring circuit
Plate radius-thickness ratio is increasing.Traditional DC plating copper technology is not enough due to covering power, it is impossible to meet high thickness to diameter ratio circuit plate hole
Metallized requirement, the wiring board for especially having matching requirements to through hole, traditional plating mode are even more and are difficult to meet public to aperture
Poor demand.
At present, by following two modes improving covering power, so as to realize high thickness to diameter ratio wiring board hole metallization：
（1）By the photo etching component for improveing electroplating liquid medicine, and through hole aperture is reduced to the mode of the voltage drop at through hole hole center changing
Good traditional direct current electrode position mode, to realize the hole metallization of high thickness to diameter ratio wiring board；（2）Arteries and veins is adopted by pulse plating equipment
The mode of punching plating realizes the hole metallization of high thickness to diameter ratio wiring board.
In the course of processing of prior art, at least there is problems with：
Above two method input is larger, and production cost is high；To realize higher covering power, the electric current for using is less, efficiency
Can be than relatively low.
The content of the invention
In view of this, the present invention provides a kind of hole metallization method of high thickness to diameter ratio wiring board, to solve in background technology
Described problem.
The technical scheme is that：A kind of hole metallization method of high thickness to diameter ratio wiring board, comprises the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
The step of also including the making masking hole film before masking hole dry film is made in step S4.
The diameter of masking hole figure 0.16-0.22mm bigger than the aperture in the back drill hole on the masking hole film.
In step S3, after pasting plate face dry film, also include exposed and developed step.
The copper layer thickness that the step S1 magnetron sputtering is formed is 0.05-0.15 μm.
It is 5-10 μm that the copper layer thickness to be formed is electroplated in filling perforation described in step S2.
Filling perforation electroplating current density described in step S2 is 15-18ASF, and electroplating time is 20-37min.
The radius-thickness ratio in the back drill hole is 18:1-26:1.
In step S1, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, the diameter of metal
It is 1-3mm for 15-25mm, thickness.The distance between target and substrate are 12-15cm, and working gas is 99.99% High Purity Nitrogen
Gas and 99.99% high-purity argon gas, respectively use quality effusion meter control；Substrate before vacuum chamber is put into, respectively with acetone,
Ethanol, deionized water are cleaned by ultrasonic, and gas pressure in vacuum is extracted into 0.5 × 10 before sputtering-5-1.5×10-5Pa, and it is pre- to be filled with argon
Sputter 3-5min to clean target surface.Nitrogen is subsequently passed, and total sputtering pressure is controlled in 6-10Pa, is controlled the ratio of nitrogen and argon
For 1:2, sputtering power is controlled in 105-118w, and sputtering time is 20-40min.
The internal surface of hole resistivity of the high thickness to diameter ratio wiring board is 3.7 × 10 at 25 °C-8-6.4×10-8Ω·m。
The beneficial effects of the present invention is：The present invention can solve the problem that as high thickness to diameter ratio metallization back drill hole is deep, scheme
After shape plating, tin layers are difficult to be plated to bottom hole portion, cause etching metapore bottom without tin layers protection, the phenomenon without metallic copper in hole occur, enter
And cause wiring board to be scrapped, so as to propose a kind of to improve method of the high thickness to diameter ratio producing circuit board metallized back drill hole without copper；Can have
The thickness of effect control hole wall copper, thickness is controllable, can avoid the waste of the material that thick process for copper commonly used in the prior art causes,
And hole wall surface copper layer thickness can be made uniform using this mode, surfacing disclosure satisfy that precision circuit component lines plate
The requirement of performance；Processing method is simple, and advanced technology improves electroplating current density, shortens the time of plating, improves depth
Plating ability, and effectively reduce the pollution caused by plating.
Specific embodiment
Technical scheme in the embodiment of the present invention will be clearly and completely described below, it is clear that described enforcement
Example is only a part of embodiment of the invention, rather than the embodiment of whole.Based on the embodiment in the present invention, this area is common
The every other embodiment obtained under the premise of creative work is not made by technical staff, belongs to the model of present invention protection
Enclose.
Embodiment 1
The present embodiment provides a kind of hole metallization method of high thickness to diameter ratio wiring board, comprises the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
The step of also including the making masking hole film before masking hole dry film is made in step S4.
The diameter of masking hole figure 0.19mm bigger than the aperture in the back drill hole on the masking hole film.
In step S3, after pasting plate face dry film, also include exposed and developed step.
The copper layer thickness that the step S1 magnetron sputtering is formed is 0.08 μm.
It is 8 μm that the copper layer thickness to be formed is electroplated in filling perforation described in step S2.
Filling perforation electroplating current density described in step S2 is 16ASF, and electroplating time is 28min.
The radius-thickness ratio in the back drill hole is 22:1.
In step S1, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, the diameter of metal
It is 2mm for 20mm, thickness.The distance between target and substrate be 13cm, working gas be 99.99% high pure nitrogen and
99.99% high-purity argon gas, respectively use quality effusion meter control；Substrate before vacuum chamber is put into, respectively with acetone, ethanol,
Deionized water is cleaned by ultrasonic, and gas pressure in vacuum is extracted into 0.8 × 10 before sputtering-5, and be filled with argon pre-sputtering 4.2min to clean
Target surface.Nitrogen being subsequently passed, total sputtering pressure being controlled in 8Pa, the ratio for controlling nitrogen and argon is 1:2, sputtering power control
In 113w, sputtering time is 32min.
The internal surface of hole resistivity of the high thickness to diameter ratio wiring board is 4.7 × 10 at 25 °C-8-Ω·m。
The present embodiment method can solve the problem that tin layers are difficult to after graphic plating as high thickness to diameter ratio metallization back drill hole is deep
Bottom hole portion is plated to, is caused etching metapore bottom without tin layers protection, the phenomenon without metallic copper in hole occurred, and then cause circuit blackboard newspaper
It is useless, so as to propose a kind of to improve method of the high thickness to diameter ratio producing circuit board metallized back drill hole without copper；It is capable of effective control hole wall copper
Thickness, thickness are controllable, can avoid the waste of the material that thick process for copper commonly used in the prior art causes, and adopt this mode
Hole wall surface copper layer thickness can be made uniform, surfacing disclosure satisfy that the requirement of precision circuit component lines plate performance；Processing
Method is simple, and advanced technology improves electroplating current density, shortens the time of plating, improves covering power, and effectively subtracts
Pollution caused by few plating.
Embodiment 2
The present embodiment provides a kind of hole metallization method of high thickness to diameter ratio wiring board, comprises the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
The step of also including the making masking hole film before masking hole dry film is made in step S4.
The diameter of masking hole figure 0.16mm bigger than the aperture in the back drill hole on the masking hole film.
In step S3, after pasting plate face dry film, also include exposed and developed step.
The copper layer thickness that the step S1 magnetron sputtering is formed is 0.05 μm.
It is 5 μm that the copper layer thickness to be formed is electroplated in filling perforation described in step S2.
Filling perforation electroplating current density described in step S2 is 18ASF, and electroplating time is 20min.
The radius-thickness ratio in the back drill hole is 26:1.
In step S1, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, the diameter of metal
It is 1mm for 15mm, thickness.The distance between target and substrate be 12cm, working gas be 99.99% high pure nitrogen and
99.99% high-purity argon gas, respectively use quality effusion meter control；Substrate before vacuum chamber is put into, respectively with acetone, ethanol,
Deionized water is cleaned by ultrasonic, and gas pressure in vacuum is extracted into 1.5 × 10 before sputtering-5Pa, and be filled with argon pre-sputtering 3min to clean
Target surface.Nitrogen being subsequently passed, total sputtering pressure being controlled in 10Pa, the ratio for controlling nitrogen and argon is 1:2, sputtering power control
In 118w, sputtering time is 20min.
The internal surface of hole resistivity of the high thickness to diameter ratio wiring board is 6.4 × 10 at 25 °C-8Ω·m。
Embodiment 3
The present embodiment provides a kind of hole metallization method of high thickness to diameter ratio wiring board, comprises the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
The step of also including the making masking hole film before masking hole dry film is made in step S4.
The diameter of masking hole figure 0.22mm bigger than the aperture in the back drill hole on the masking hole film.
In step S3, after pasting plate face dry film, also include exposed and developed step.
The copper layer thickness that the step S1 magnetron sputtering is formed is 0.15 μm.
It is 10 μm that the copper layer thickness to be formed is electroplated in filling perforation described in step S2.
Filling perforation electroplating current density described in step S2 is 15ASF, and electroplating time is 37min.
The radius-thickness ratio in the back drill hole is 18:1.
In step S1, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, the diameter of metal
It is 3mm for 25mm, thickness.The distance between target and substrate be 15cm, working gas be 99.99% high pure nitrogen and
99.99% high-purity argon gas, respectively use quality effusion meter control；Substrate before vacuum chamber is put into, respectively with acetone, ethanol,
Deionized water is cleaned by ultrasonic, and gas pressure in vacuum is extracted into 0.5 × 10 before sputtering-5Pa, and be filled with argon pre-sputtering 5min to clean
Target surface.Nitrogen being subsequently passed, total sputtering pressure being controlled in 6Pa, the ratio for controlling nitrogen and argon is 1:2, sputtering power control
In 105w, sputtering time is 40min.
The internal surface of hole resistivity of the high thickness to diameter ratio wiring board is 3.7 × 10 at 25 °C-8Ω·m。
Embodiment 4
The present embodiment provides a kind of hole metallization method of high thickness to diameter ratio wiring board, comprises the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
The step of also including the making masking hole film before masking hole dry film is made in step S4.
The diameter of masking hole figure 0.19mm bigger than the aperture in the back drill hole on the masking hole film.
In step S3, after pasting plate face dry film, also include exposed and developed step.
The copper layer thickness that the step S1 magnetron sputtering is formed is 0.08 μm.
It is 8 μm that the copper layer thickness to be formed is electroplated in filling perforation described in step S2.
Filling perforation electroplating current density described in step S2 is 16ASF, and electroplating time is 28min.
The radius-thickness ratio in the back drill hole is 20:1.
In step S1, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, the diameter of metal
It is 3mm for 25mm, thickness.The distance between target and substrate be 15cm, working gas be 99.99% high pure nitrogen and
99.99% high-purity argon gas, respectively use quality effusion meter control；Substrate before vacuum chamber is put into, respectively with acetone, ethanol,
Deionized water is cleaned by ultrasonic, and gas pressure in vacuum is extracted into 0.5 × 10 before sputtering-5Pa, and be filled with argon pre-sputtering 5min to clean
Target surface.Nitrogen being subsequently passed, total sputtering pressure being controlled in 6Pa, the ratio for controlling nitrogen and argon is 1:2, sputtering power control
In 105w, sputtering time is 40min.
The internal surface of hole resistivity of the high thickness to diameter ratio wiring board is 5.3 × 10 at 25 °C-8Ω·m。
Embodiment 5
The present embodiment provides a kind of hole metallization method of high thickness to diameter ratio wiring board, comprises the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
The step of also including the making masking hole film before masking hole dry film is made in step S4.
The diameter of masking hole figure 0.19mm bigger than the aperture in the back drill hole on the masking hole film.
In step S3, after pasting plate face dry film, also include exposed and developed step.
The copper layer thickness that the step S1 magnetron sputtering is formed is 0.08 μm.
It is 8 μm that the copper layer thickness to be formed is electroplated in filling perforation described in step S2.
Filling perforation electroplating current density described in step S2 is 16ASF, and electroplating time is 28min.
The radius-thickness ratio in the back drill hole is 24:1.
In step S1, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, the diameter of metal
It is 1mm for 15mm, thickness.The distance between target and substrate be 12cm, working gas be 99.99% high pure nitrogen and
99.99% high-purity argon gas, respectively use quality effusion meter control；Substrate before vacuum chamber is put into, respectively with acetone, ethanol,
Deionized water is cleaned by ultrasonic, and gas pressure in vacuum is extracted into 1.5 × 10 before sputtering-5Pa, and be filled with argon pre-sputtering 3min to clean
Target surface.Nitrogen being subsequently passed, total sputtering pressure being controlled in 10Pa, the ratio for controlling nitrogen and argon is 1:2, sputtering power control
In 118w, sputtering time is 20min.
The internal surface of hole resistivity of the high thickness to diameter ratio wiring board is 4.2 × 10 at 25 °C-8Ω·m。
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, Er Qie
In the case of spirit or essential attributes without departing substantially from the present invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit is required rather than described above is limited, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.
Moreover, it will be appreciated that although this specification is been described by according to embodiment, not each embodiment only includes one
Individual independent technical scheme, this narrating mode of description is only that those skilled in the art will should say for clarity
Bright book as an entirety, the technical scheme in each embodiment can also Jing it is appropriately combined, forming those skilled in the art can be with
The other embodiment of understanding.The ins and outs of all not detailed descriptions in the present invention, can be arbitrary existing by this area
There is technology to realize.
Claims (10)
1. a kind of hole metallization method of high thickness to diameter ratio wiring board, it is characterised in that comprise the steps：
S1, carry out controlling deep drilling back drill hole, nog plate to wiring board, magnetron sputtering plating carried out after deburring；
S2, filling perforation plating, plate thick copper layer in the back drill hole in step S1 after electroless copper plating；
S3, PCB surface paste plate face dry film, make outer graphics, and carry out graphic plating, assist side plate face and back drill
Protection tin layers are formed in hole, the plate face dry film is then returned；
S4, assist side surface make masking hole dry film；
S5, chemical etching wiring board, remove masking hole dry film, remove protection tin layers.
2. a kind of hole metallization method of the high thickness to diameter ratio wiring board according to claim 1, it is characterised in that the step
The step of also including the making masking hole film before masking hole dry film is made in rapid S4.
3. the hole metallization method of a kind of high thickness to diameter ratio wiring board according to claim 2, it is characterised in that described to cover
The diameter of masking hole figure 0.16-0.22mm bigger than the aperture in the back drill hole on the film of hole.
4. the hole metallization method of a kind of high thickness to diameter ratio wiring board according to any one of claim 1-3, its feature exist
In, in step S3, pasting.
5. a kind of hole metallization method of the high thickness to diameter ratio wiring board according to claim 4, it is characterised in that the step
In rapid S1, the copper layer thickness that magnetron sputtering is formed is 0.05-0.15 μm.
6. a kind of hole metallization method of the high thickness to diameter ratio wiring board according to claim 5, it is characterised in that the step
It is 5-10 μm that described in rapid S2, the copper layer thickness to be formed is electroplated in filling perforation.
7. a kind of hole metallization method of the high thickness to diameter ratio wiring board according to claim 6, it is characterised in that the step
Described in rapid S2, filling perforation electroplating current density is 15-18ASF, and electroplating time is 20-37min.
8. a kind of hole metallization method of the high thickness to diameter ratio wiring board according to claim 7, it is characterised in that the back of the body
The radius-thickness ratio of drilling is 18:1-26:1.
9. a kind of hole metallization method of high thickness to diameter ratio wiring board according to claim 1, it is characterised in that step S1
In, the method for magnetron sputtering is：The target of sputtering is 99.999% high purity copper, and a diameter of 15-25mm of metal, thickness are 1-
3mm；The distance between target and substrate are 12-15cm, and working gas is 99.99% high pure nitrogen and 99.99% high-purity argon
Gas, respectively use quality effusion meter control；Substrate is before vacuum chamber is put into, clear with acetone, ethanol, deionized water ultrasound respectively
Wash, gas pressure in vacuum is extracted into into 0.5 × 10 before sputtering-5-1.5×10-5Pa, and be filled with argon pre-sputtering 3-5min to clean target
Face；Nitrogen being subsequently passed, total sputtering pressure being controlled in 6-10Pa, the ratio for controlling nitrogen and argon is 1:2, sputtering power control
In 105-118w, sputtering time is 20-40min.
10. a kind of hole metallization method of high thickness to diameter ratio wiring board according to claim 1, it is characterised in that the height
The internal surface of hole resistivity of radius-thickness ratio wiring board is 3.7 × 10 at 25 °C-8-6.4×10-8Ω·m。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610899383.XA CN106535501A (en) | 2016-10-17 | 2016-10-17 | Hole metallizing method for circuit board with high ratio of thickness to radial dimension |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610899383.XA CN106535501A (en) | 2016-10-17 | 2016-10-17 | Hole metallizing method for circuit board with high ratio of thickness to radial dimension |
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| CN201610899383.XA Pending CN106535501A (en) | 2016-10-17 | 2016-10-17 | Hole metallizing method for circuit board with high ratio of thickness to radial dimension |
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| CN108950506A (en) * | 2018-08-15 | 2018-12-07 | 翔声科技（厦门）有限公司 | A kind of metallization sputter copper method of ceramic substrate with holes |
| CN109219263A (en) * | 2018-09-29 | 2019-01-15 | 江苏芯力特电子科技有限公司 | A kind of manufacture craft of anti-oxidant PCB printed circuit board |
| CN112725749A (en) * | 2020-11-30 | 2021-04-30 | 惠州市芯瓷半导体有限公司 | Method for increasing adhesion of inner wall of ceramic hole |
| CN115261778A (en) * | 2022-06-23 | 2022-11-01 | 胜宏科技（惠州）股份有限公司 | Magnetron sputtering assisted copper deposition method |
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| CN108950506A (en) * | 2018-08-15 | 2018-12-07 | 翔声科技（厦门）有限公司 | A kind of metallization sputter copper method of ceramic substrate with holes |
| CN109219263A (en) * | 2018-09-29 | 2019-01-15 | 江苏芯力特电子科技有限公司 | A kind of manufacture craft of anti-oxidant PCB printed circuit board |
| CN112725749A (en) * | 2020-11-30 | 2021-04-30 | 惠州市芯瓷半导体有限公司 | Method for increasing adhesion of inner wall of ceramic hole |
| CN115261778A (en) * | 2022-06-23 | 2022-11-01 | 胜宏科技（惠州）股份有限公司 | Magnetron sputtering assisted copper deposition method |
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