CN106460170B - 甲硅烷基环戊二烯基钼和甲硅烷基烯丙基配合物及其在薄膜沉积中的应用 - Google Patents

甲硅烷基环戊二烯基钼和甲硅烷基烯丙基配合物及其在薄膜沉积中的应用 Download PDF

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CN106460170B
CN106460170B CN201580024681.8A CN201580024681A CN106460170B CN 106460170 B CN106460170 B CN 106460170B CN 201580024681 A CN201580024681 A CN 201580024681A CN 106460170 B CN106460170 B CN 106460170B
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hydrogen
butyl
trimethylsilyl
tert
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CN106460170A (zh
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肖恩·盖瑞特
保罗·威廉姆斯
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Merck Patent GmbH
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal

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  • Chemical & Material Sciences (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
CN201580024681.8A 2014-03-13 2015-03-10 甲硅烷基环戊二烯基钼和甲硅烷基烯丙基配合物及其在薄膜沉积中的应用 Active CN106460170B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461952633P 2014-03-13 2014-03-13
US61/952,633 2014-03-13
PCT/US2015/019604 WO2015138390A1 (en) 2014-03-13 2015-03-10 Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition

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CN106460170A CN106460170A (zh) 2017-02-22
CN106460170B true CN106460170B (zh) 2019-12-06

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US (1) US10745430B2 (https=)
EP (1) EP3116884B1 (https=)
JP (1) JP6471371B2 (https=)
KR (1) KR101819482B1 (https=)
CN (1) CN106460170B (https=)
IL (1) IL247719A (https=)
SG (1) SG11201607587YA (https=)
TW (1) TWI660958B (https=)
WO (1) WO2015138390A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10155783B2 (en) 2013-05-28 2018-12-18 Merck Patent Gmbh Manganese complexes and use thereof for preparing thin films
CN109803974B (zh) * 2016-09-09 2023-04-14 默克专利股份有限公司 含有烯丙基配体的金属复合物
KR102727616B1 (ko) * 2016-10-07 2024-11-07 삼성전자주식회사 유기 금속 전구체, 이를 이용한 막 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US10453744B2 (en) 2016-11-23 2019-10-22 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
US20180142345A1 (en) * 2016-11-23 2018-05-24 Entegris, Inc. Low temperature molybdenum film deposition utilizing boron nucleation layers
KR102447189B1 (ko) * 2018-03-02 2022-09-26 에이에스엠엘 네델란즈 비.브이. 재료의 패터닝된 층을 형성하기 위한 방법 및 장치
KR102355507B1 (ko) 2018-11-14 2022-01-27 (주)디엔에프 몰리브덴 함유 박막의 제조방법 및 이로부터 제조된 몰리브덴함유 박막
KR102914581B1 (ko) * 2020-01-16 2026-01-16 메르크 파텐트 게엠베하 루테늄-티타늄 니트라이드 필름 상에 증착된 루테늄-함유 필름 및 이를 형성하는 방법
JP7433132B2 (ja) * 2020-05-19 2024-02-19 東京エレクトロン株式会社 成膜方法及び成膜装置
CN111777649A (zh) * 2020-07-16 2020-10-16 苏州欣溪源新材料科技有限公司 二烷基二茂钼类配合物及其制备方法与应用
KR20220011092A (ko) 2020-07-20 2022-01-27 에이에스엠 아이피 홀딩 비.브이. 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템
TWI878570B (zh) * 2020-07-20 2025-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
US11434254B2 (en) 2021-01-12 2022-09-06 Applied Materials, Inc. Dinuclear molybdenum precursors for deposition of molybdenum-containing films
US11459347B2 (en) 2021-01-12 2022-10-04 Applied Materials, Inc. Molybdenum(IV) and molybdenum(III) precursors for deposition of molybdenum films
US11390638B1 (en) 2021-01-12 2022-07-19 Applied Materials, Inc. Molybdenum(VI) precursors for deposition of molybdenum films
US11760768B2 (en) 2021-04-21 2023-09-19 Applied Materials, Inc. Molybdenum(0) precursors for deposition of molybdenum films
CN121620608A (zh) * 2023-08-24 2026-03-06 大金工业株式会社 金属配位化合物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB994147A (en) * 1961-01-25 1965-06-02 Ernst Otto Fischer Process for the preparation of organo metallic compounds and products resulting therefrom
CN101508706A (zh) * 2008-01-24 2009-08-19 普莱克斯技术有限公司 有机金属化合物、方法及使用方法
CN101781336A (zh) * 2008-01-24 2010-07-21 普莱克斯技术有限公司 有机金属化合物、方法及使用方法
TW201335415A (zh) * 2012-01-26 2013-09-01 Sigma Aldrich Co Llc 鉬烯丙基錯合物及其於薄膜沈積之用途

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107190B2 (ja) 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
JPS63196243A (ja) 1987-02-09 1988-08-15 Hiroyuki Hamano 肉の削り節及びその製造方法
US5352488A (en) * 1993-05-14 1994-10-04 Syracuse University Chemical vapor deposition process employing metal pentadienyl complexes
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
TWI425110B (zh) * 2007-07-24 2014-02-01 辛格瑪艾瑞契公司 以化學相沉積法製造含金屬薄膜之方法
US20090199739A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
DE102008036247A1 (de) 2008-08-04 2010-02-11 Merck Patent Gmbh Elektronische Vorrichtungen enthaltend Metallkomplexe
SG178267A1 (en) 2009-08-07 2012-03-29 Sigma Aldrich Co Llc High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
SG187920A1 (en) * 2010-08-27 2013-03-28 Sigma Aldrich Co Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
US8530348B1 (en) * 2012-05-29 2013-09-10 Intermolecular, Inc. Integration of non-noble DRAM electrode
US9194040B2 (en) * 2012-07-25 2015-11-24 Applied Materials, Inc. Methods for producing nickel-containing films
US10155783B2 (en) 2013-05-28 2018-12-18 Merck Patent Gmbh Manganese complexes and use thereof for preparing thin films
GB201318595D0 (en) 2013-10-21 2013-12-04 Zephyros Inc Improvements in or relating to laminates
CN106232611A (zh) 2013-10-28 2016-12-14 赛孚思科技有限公司 包含酰胺基亚胺配位体的金属配合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB994147A (en) * 1961-01-25 1965-06-02 Ernst Otto Fischer Process for the preparation of organo metallic compounds and products resulting therefrom
CN101508706A (zh) * 2008-01-24 2009-08-19 普莱克斯技术有限公司 有机金属化合物、方法及使用方法
CN101781336A (zh) * 2008-01-24 2010-07-21 普莱克斯技术有限公司 有机金属化合物、方法及使用方法
TW201335415A (zh) * 2012-01-26 2013-09-01 Sigma Aldrich Co Llc 鉬烯丙基錯合物及其於薄膜沈積之用途

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WO2015138390A1 (en) 2015-09-17
CN106460170A (zh) 2017-02-22
US10745430B2 (en) 2020-08-18
KR101819482B1 (ko) 2018-01-17
TWI660958B (zh) 2019-06-01
KR20160122273A (ko) 2016-10-21
JP2017515885A (ja) 2017-06-15
JP6471371B2 (ja) 2019-02-20
TW201542570A (zh) 2015-11-16
US20170121356A1 (en) 2017-05-04
EP3116884A1 (en) 2017-01-18
SG11201607587YA (en) 2016-10-28
IL247719A (en) 2017-10-31
EP3116884B1 (en) 2017-08-16

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