CN106457383A - 低压力烧结粉末 - Google Patents

低压力烧结粉末 Download PDF

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Publication number
CN106457383A
CN106457383A CN201580026546.7A CN201580026546A CN106457383A CN 106457383 A CN106457383 A CN 106457383A CN 201580026546 A CN201580026546 A CN 201580026546A CN 106457383 A CN106457383 A CN 106457383A
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China
Prior art keywords
sintered
metallic particles
weight
acid
silver
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Granted
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CN201580026546.7A
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CN106457383B (zh
Inventor
S·戈沙尔
N·K·查基
P·S·罗伊
S·萨卡尔
A·拉斯托吉
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Alpha Assembly Solutions Inc
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Alpha Metals Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
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    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/17—Metallic particles coated with metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
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    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/3613—Polymers, e.g. resins
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
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Abstract

一种烧结粉末，其包含：具有从100nm至50μm的平均最长尺寸的第一类型的金属颗粒。

Description

低压力烧结粉末
本发明涉及烧结粉末、包含所述烧结粉末的烧结膏和膜、以及使用其形成的烧结接头。
烧结接头提供对焊接接头的替代。形成烧结接头的典型方法包括将金属粉末(常以粉末压块的形式)放置在待接合的两个工件之间并且随后烧结所述金属粉末。金属原子产生的原子扩散形成所述两个工件之间的结合。
在电子工业中已经使用金属纳米粉末来形成烧结接头，并且认为金属纳米粉末是无铅焊接的有用替代。纳米材料和相应的块体材料之间的不同行为被认为是由具有较高的表面与体积比的纳米材料所致。
已知含有银纳米颗粒的烧结粉末。通过银纳米颗粒的原子扩散形成的烧结接头能够在显著低于块体的熔化温度的温度下加工并且还能够用于高温应用。潜在优势例如高温稳定性、高电导率和热导率以及优良的机械性质使这样的烧结粉末成为用于模片固定应用的有希望的候选物。然而，这样的烧结粉末的烧结温度对于在大多数电子应用中的有效使用来说仍然太高。通过在烧结过程中施加外部压力可以降低烧结温度。显示银膏的压力辅助低温烧结作为模片固定方法的焊料回流的可行替代。显示了高压力的施加显著地降低所述烧结温度，并且能够以导致在几分钟内形成烧结接头的相对较快的速率实现用于模片固定所需要的性质。然而，大的外部压力使工艺的自动化困难。此外，大的外部压力的施加可以导致工件的损坏。
已知的是，将焊料膏分配用于各种应用，但是主要地作为当不可能波峰焊或丝网印刷时的替代。能够将焊料膏分配至印刷电路板、集成电路封装和电气部件连接器上的各种表面安装应用。焊料膏的典型的问题包括：滴液、跳点和不一致的分配。典型地在电子工业中使用软焊料和硬焊料用于模片固定和分配。在热循环条件下所述软焊料易于疲劳失效。另一方面，使用硬焊料和玻璃基复合材料使器件能够在较高的结温下运行，但是它们较高的弹性模量和加工温度能够在器件中产生高机械应力，并且这些材料还具有相对低的热导率和电导率。
本发明寻求解决与现有技术相关的问题中的至少一些或至少提供其在商业上可接受的替代解决方案。
在第一方面，本发明提供一种烧结粉末，其包含：
具有从100nm至50μm的平均最长尺寸的第一类型的金属颗粒。
除非清楚地相反指示，如这里限定的每个方面或实施方案可以与任何其他一个或多个方面或者一个或多个实施方案组合。特别地，指出为为优选或有利的任何特征可以与任何其他指出为优选或有利的特征组合。
如这里使用的术语“烧结粉末”可以涵盖能够形成烧结接头的粉末。通过放置在待接合的两个工件之间的金属颗粒的原子扩散来形成烧结接头。所述术语“烧结粉末”可以涵盖微粒。所述烧结粉末可以包含规则形状的颗粒(例如球)或不规则形状的颗粒(例如须、板、棒或片)。
如这里使用的术语“封端剂”可以涵盖当存在于金属颗粒的表面上时减少所述金属颗粒的聚集、使在粉末生产过程中的颗粒大小控制成为可能并且降低颗粒的表面氧化或其他污染的物质。
本发明人出人意料地发现可以在低温下且仅施加非常低的压力(典型地基本上没有压力)来烧结如这里描述的烧结粉末。结果是，伴随对工件减少的损坏，可以发生使用所述烧结粉末在工件之间的烧结接头的形成。另外，因为高压力的施加不是必需的，所以简化了烧结接头的形成并且可以更容易地使烧结接头的形成自动化。此外，与纳米大小的颗粒对比，通过使用仅低量的封端剂能够避免所述第一类型的金属颗粒的聚集。因此，与仅包含纳米大小的颗粒的烧结粉末对比，降低了包含在所得的烧结接头中的残余有机物的量，由此改进所述接头的机械性质。
所述第一类型的金属颗粒具有从100nm至50μm的平均最长尺寸。大于50μm的平均最长尺寸可以导致低表面与体积比，由此需要较高的烧结温度和/或压力。小于100nm的平均最长尺寸可以需要不利水平的封端剂。典型地所述第一类型的金属颗粒的大多数颗粒具有从100nm至50μm的最长尺寸，更典型地基本上形成所述第一类型的金属颗粒的全部颗粒具有从100nm至50μm的最长尺寸。当形成微粒的颗粒是球状时，所述最长尺寸将是球的直径。可以采用使用动态光散射方法或激光散射方法的粒度分析仪测量这里提及的平均最长直径。
所述第一类型的金属颗粒可以全部包含相同的金属。或者，一些所述颗粒可以包含不同的金属。另外，个别的颗粒可以包含两种或更多种不同的金属。如这里使用的术语“金属”可以涵盖合金或核-壳结构。因此，所述颗粒可以包含一种或多种合金或者一种或多种金属的合金或核-壳结构。
优选地，所述第一类型的金属颗粒的至少一部分至少局部地涂覆有封端剂。封端剂的使用可以帮助降低所述颗粒的聚集。这样的聚集是不利的，因为其可以增加所述烧结粉末的烧结温度。因此，封端剂的使用使在较低温度下在工件之间烧结接头的形成成为可能，并且因此可以帮助降低由暴露于高烧结温度引起的对工件的损坏。另外，封端剂的使用可以帮助避免所述金属的劣化，例如通过所述金属暴露于空气引起的损坏。
在这个实施方案中，所述金属颗粒可以是基本上涂覆有所述封端剂，或完整涂覆有封端剂。增加所述封端剂在所述金属颗粒上的覆盖可以帮助进一步降低所述金属颗粒的聚集，并且因此进一步降低所述烧结温度。另外，大多数所述金属颗粒可以涂覆有所述封端剂，或基本上全部的所述金属颗粒可以涂覆有封端剂。
所述封端剂优选地包含羧酸酯和/或胺官能团。
所述烧结粉末优选地包含至多5重量％封端剂，更优选地从0.1至3重量％封端剂，甚至更优选地约0.5重量％封端剂。在这点上使用的术语“重量％”基于所述烧结粉末的总重量。如果所述烧结粉末包含大于5重量％封端剂，那么可以需要较高的温度以在烧结之前熔化所述封端剂。此外，可以增加所得的烧结接头中含有的有机物的量。如果所述烧结粉末包含小于0.1重量％封端剂，那么所述封端剂可能不充分地覆盖所述金属的表面。这可以导致所述颗粒的聚集的增加，并且因此导致所述烧结温度的增加。所述第一类型的金属颗粒的大小和所述低水平的封端剂的组合可以导致强的所得接头、低的所需烧结温度和压力以及所述颗粒的减少的聚集的组合。
所述第一类型的金属颗粒优选地具有从100nm至20μm、更优选地从150nm至15μm、甚至更优选地从200nm至10μm的平均最长直径。
所述第一类型的金属颗粒优选地具有从1至3μm的D50值(即在累积分布中在50％处的颗粒直径的值)。这可以提供特别有利的烧结特性。可以采用使用动态光散射方法或激光散射方法的粒度分析仪测量所述D50。
所述第一类型的金属颗粒优选地具有从3.5至5.5g/cc的振实密度。可以使用振实密度仪在标准程序下测量所述振实密度。较高的振实密度表明在烧结之前存在所述金属颗粒的较少程度的聚集。
所述烧结粉末可以包含具有小于100μm的平均最长尺寸的第二类型的金属颗粒，其中所述第二类型的金属颗粒至少局部地涂覆有封端剂。所述第一和第二类型的金属颗粒的组合增加了形成所述烧结粉末的颗粒的接触点。这可以导致所述粉末的较好烧结并且还可以导致所述粉末的改进形态。因此，改进了使用这样的粉末形成的接头的热循环性质。另外，较大的第一类型的颗粒典型地需要仅低水平的封端剂。因此，与仅包含纳米大小的颗粒的烧结粉末相比，可以降低所述烧结粉末中的封端剂的总量，由此使在任何形成的接头中的残余有机物的出现最小化。结果是，改进了热导率和高温性质，例如热循环。典型地所述第二类型的金属颗粒的大多数颗粒具有小于100μm的最长尺寸，更典型地基本上形成所述第二类型的金属颗粒的全部颗粒具有小于100μm的最长尺寸。
在一个实施方案中，所述第二类型的金属颗粒优选地具有从1至100nm的平均最长尺寸，优选地从5至75nm。在这个实施方案中，典型地所述第二类型的金属颗粒的大多数颗粒具有在这些范围内的最长尺寸，更典型地基本上形成所述第二类型的金属颗粒的全部颗粒具有在这些范围内的最长尺寸。
所述烧结粉末优选地包含从1至19重量％的所述第一类型的金属颗粒和从81至99重量％的所述第二类型的金属颗粒，优选地从5至15重量％的所述第一类型的金属颗粒和从85至95重量％的所述第二类型的金属颗粒。这样的范围特别适合用于提供改进的热导率和热循环性质以及低烧结温度的组合。在一个优选实施方案中，所述微粒包含约10重量％的所述第一类型的颗粒和约90重量％的所述第二类型的颗粒。
所述第一类型的金属颗粒和/或第二类型的金属颗粒优选地包含银或者其一种或多种合金或核-壳结构。银具有优异的电导率和热导率，并且因此能够形成具有高电导率和/或热导率的烧结接头。因此，银金属的使用使所述烧结粉末特别适合用于在电子应用例如模片固定和微电子封装中使用。合适的银合金包括，例如AgSn、AgPd、AuAg、AgCu和AgNi。所述金属颗粒可以包含银涂覆的颗粒的核-壳结构，例如银涂覆的铜、银涂覆的镍、银涂覆的CuNi、银涂覆的CuNiZn和银涂覆的BN。
所述第一类型的金属颗粒的封端剂可以是无机的和/或有机的。有机封端剂的示例包括聚合物和配位体。优选地所述第一类型的金属颗粒的封端剂包含胺和/或羧酸酯官能团。这样的封端剂可以与所述金属颗粒形成弱的结合。因此可以降低对于破坏所述结合所需的温度，这可以帮助降低所述烧结温度。在这点上包含酸类官能团的封端剂是特别优选的。
优选地所述第一类型的金属颗粒的封端剂包含直链羧酸(C6至C22)或支链脂肪族羧酸。一个优选的示例是油酸。油酸与金属颗粒形成特别弱的结合。另外，油酸在降低金属颗粒的聚集方面是特别有效的。
所述第二类型的金属颗粒的封端剂可以是无机的和/或有机的。有机封端剂的示例包括聚合物和配位体。优选地所述第二类型的金属颗粒的封端剂包含胺和/或羧酸酯官能团。这样的封端剂可以与所述金属颗粒形成弱的结合。因此可以降低对于破坏所述结合所需的温度，这可以帮助降低所述烧结温度。在这点上包含胺官能团的封端剂是特别优选的。
优选地所述第二类型的金属颗粒的封端剂包含直链烷基胺(C6至C18)或支链脂肪族烷基胺。一个优选的示例是辛胺。辛胺与金属颗粒形成特别弱的结合。另外，辛胺在降低金属颗粒的聚集方面是特别有效的。
在一个特别优选的实施方案中，所述烧结粉末包含：
从1至10重量％的具有从100nm至20μm的平均最长尺寸的第一类型的金属颗粒，所述金属颗粒至少局部地涂覆有油酸封端剂；和
从90至99重量％的具有从5至75nm的平均最长尺寸的第二类型的金属颗粒，其中所述第二类型的金属颗粒至少局部地涂覆有辛胺封端剂。
在另外的方面，本发明提供一种烧结粉末，其包含：
具有小于10μm的平均最长尺寸的金属颗粒，
其中至少一些所述金属颗粒至少局部地涂覆有封端剂。
可以在特别低的温度下且施加仅非常低的压力(典型地基本上没有压力)来烧结这样的烧结粉末。结果是，伴随对所述工件降低的损坏，可以发生使用所述烧结粉末在工件之间烧结接头的形成。另外，因为高压力的施加不是必需的，所以简化了烧结接头的形成并且可以更容易地使烧结接头的形成自动化。
优选地所述金属颗粒具有从1至100nm的平均最长尺寸，更优选地从5至75nm，甚至更优选地从5至65nm。这样的平均最长尺寸在提供高表面与体积比方面可以是特别有效的。具有小于1nm的平均最长尺寸的金属颗粒可难以处理并且还可更易于劣化。
所述金属颗粒可以具有从500nm至5μm的平均最长尺寸。较大的颗粒大小可以需要较少的封端剂。因此，由于在所得的接头中残余有机物的减少，因而电阻率低得多。在本发明的一个方面，所述金属颗粒具有从100nm至10μm，优选地从500nm至3μm的平均最长直径，并且包含小于3重量％封端剂，典型地约0.5重量％封端剂。
当所述金属颗粒具有在上述指定的范围内的平均最长尺寸时，典型地大多数所述颗粒具有在所述范围内的最长尺寸，更典型地基本上全部所述颗粒具有在所述范围内的最长尺寸。
微粒典型地显示非均匀的颗粒大小。例如，最大的10％的所述颗粒的平均最长尺寸和最小的10％的所述颗粒的平均最长尺寸之间的差异可以大于20nm，典型地大于30nm，甚至更典型地大于60nm，还甚至更典型地从60至150nm。可能由于所述颗粒之间大的接触点，因而所述非均匀的颗粒大小可以帮助降低所述烧结粉末的烧结温度。另外，这样的非均匀的大小可以帮助增加充填率。
所述封端剂可以是无机的和/或有机的。有机封端剂的示例包括聚合物和配位体。优选地所述封端剂包含胺和/或羧酸酯官能团。这样的封端剂可以与所述金属颗粒形成弱结合。因此可以降低对于破坏所述结合所需的温度，这可以帮助降低所述烧结温度。在这点上包含胺官能团的封端剂是特别优选的。
优选地所述封端剂包含直链烷基胺(C6至C18)或支链脂肪族烷基胺。一个优选的示例是辛胺。辛胺与金属颗粒形成特别弱的结合。另外，辛胺在降低金属颗粒的聚集方面是特别有效的。
所述金属优选地包含银或者其一种或多种合金或核-壳结构。银具有优异的电导率和热导率，并且因此能够形成具有高电导率和/或热导率的烧结接头。因此，银金属的使用使所述烧结粉末特别适合用于在电子应用例如模片固定和微电子封装中使用。或者，所述金属可以包含其他金属，例如铜和金。
在另外的方面，本发明提供一种烧结粉末，其包含：
具有小于10μm的平均最长直径的微粒，其中形成所述微粒的颗粒中的至少一些包含至少局部涂覆有封端剂的金属。
在另外的方面，本发明提供一种烧结粉末，其包含：
具有小于10μm的平均最长直径的微粒，其中形成所述微粒的颗粒中的至少一些包含至少局部地涂覆有封端剂的金属，其中所述微粒包含具有从大于100nm至50μm的最长直径的第一类型的颗粒和具有从1至100nm的最长直径的第二类型的颗粒，其中所述微粒包含从5至15重量％的所述第一类型的颗粒和从85至95重量％的所述第二类型的颗粒。
在另外的方面，本发明提供一种使用如这里描述的烧结粉末形成的烧结接头。这样的烧结接头可以显示特别高的强度和/或特别高的电导率和热导率。此外，所述烧结接头在热冲击之后可以显示剪切强度非常小的改变，典型地剪切强度基本上没有改变。
在另外的方面，本发明提供包含这里描述的烧结接头的LED(发光二极管)、MEMS(微机电系统)、OLED(有机发光二极管)或PV电池(光伏电池)。
在另外的方面，本发明提供一种烧结膏，其包含：
如这里描述的烧结粉末；
黏合剂；
溶剂；和
任选地流变改进剂和/或有机银化合物和/或活化剂和/或表面活性剂和/或润湿剂和/或过氧化氢或有机过氧化物。
所述膏可以是可印刷的和/或可分配的和/或可喷射的和/或可销转移的(pintransferable)。所述膏可以具有有利于分配的黏度和流动特性，这意味着可以将所述膏用作对于焊料的一对一替代物。
与本领域中已知的烧结膏对比，本发明的烧结膏在室温下显示高稳定性。这意味着所述烧结膏的低温储存不是必需的。这是本发明的烧结膏的特别重要的优势。
典型地选择所述黏合剂和/或溶剂使得在小于所述烧结粉末的目标烧结温度的温度下能从所述膏去除它们(例如通过蒸发和/或烧掉)。这可以帮助促进所述金属颗粒的几乎完全烧结。当在烧结过程中在所述接头中剩余有机材料时，可以发生所述金属颗粒的不充分烧结。这可以导致弱烧结接头。
所述黏合剂可以起到将所述膏黏合在一起使得其更容易在所需要的烧结接头的位置准确地处理和放置。合适的黏合剂的示例包括但是不限于：热塑性聚合物，例如聚甲基丙烯酸甲酯、聚酰胺、聚乙烯、聚丙烯、聚苯乙烯；或热固性聚合物，例如聚氨酯、聚氰尿酸酯、环氧树脂、聚酰亚胺、三聚氰胺甲醛树脂和双马来酰亚胺树脂。特别优选的示例包括羟丙基甲基纤维素、三乙酰甘油酯和聚乙酸乙烯酯。优选地所述黏合剂包含环氧基树脂。环氧基树脂在将所述膏黏合在一起的方面可以是特别有效的，使得更容易处理所述膏并且可以更容易将所述膏准确地放置在所需要的烧结接头的位置。此外，环氧树脂的使用可以在烧结之前导致较强接头的形成，这意味着在烧结之前不存在将待接合的工件固定在一起的要求。当所述封端剂包含胺官能团时，环氧树脂的使用是特别有利的。在这种情况下，所述胺充当形成交联结构的硬化剂。这在烧结之前可以导致特别强的接头。
所述溶剂优选地包含单萜醇和/或二醇和/或二醇醚，优选地萜品醇和/或二乙二醇单正丁基醚。单萜醇和/或二醇醚在将所述金属颗粒分配在所述膏内的方面可以是特别有效的，其导致有机组分基体内金属颗粒的均匀分布与减少的团簇聚结和/或聚集。单萜醇和/或二醇醚的使用可以起到增加所述烧结膏的流动能力和印刷能力的作用。
可以添加流变改进剂以控制所述膏的黏度。合适的流变改进剂的示例包括但不限于短链或长链(C＝2至30)羧酸或二羧酸或羟基羧酸，例如月桂酸、硬脂酸、新癸酸、硬脂酸、油酸、草酸、丙二酸、琥珀酸、己二酸、马来酸、柠檬酸、乳酸，或短链或长链(C＝2至30)胺，例如丁胺、己胺、辛胺、十二胺、十六胺、Thixcin R和Crayval lac Super，或其两种或更多种的组合。
在烧结过程中，所述有机银化合物可以分解为金属性银，其可以增加所述烧结接头的热导率。另外，所述有机银化合物的存在增加了所述膏至所述接头界面的润湿。所述有机银化合物可以包含一种或多种短链或长链羧酸(C＝1至30)，例如硬脂酸银、棕榈酸银、油酸银、月桂酸银、新癸酸银、癸酸银、辛酸银、己酸银、乳酸银、草酸银、柠檬酸银、醋酸银和琥珀酸银。在一些实施方案中，可以省略所述有机银化合物。
可以添加活化剂以去除从被印刷的表面可以存在的任何金属氧化物和/或以去除在所述烧结粉末中可以存在的任何氧化物。芳基或烷基羧酸可以作为活化剂使用，例如己二酸、琥珀酸和戊二酸中的一种或多种。
可以将表面活性剂添加至所述烧结膏以帮助在所述烧结膏内分散所述烧结粉末。合适的表面活性剂的示例包括但不限于Disperbyk 163、IGEPAL CA-630、月桂基葡糖苷和TritonX 100。
所述烧结膏优选地还包含过氧化物。合适的过氧化物的示例包括但不限于过氧化氢或有机过氧化物，例如叔丁基氢过氧化物和叔丁基过氧-2-乙基己酸酯。过氧化物将氧引入所述膏中，其可以有助于在模片固定方法中在所述模片区域下方的膏的烧结。氧还可以使在惰性气氛例如氮气氛下所述金属颗粒的烧结成为可能。所述烧结膏优选地包含至多3重量％过氧化氢或有机过氧化物，优选地从0.5至2重量％过氧化氢或有机过氧化物，更优选地从0.7至1.8重量％过氧化氢或有机过氧化物。优选液态过氧化物来控制流变和银沉降。
所述烧结膏优选地包含：
从1至15重量％黏合剂；和/或
从1至30重量％溶剂；和/或
至多5重量％流变改进剂；和/或
至多10重量％有机银化合物；和/或
至多2重量％活化剂；和/或
至多6重量％表面活性剂；和/或
至多2重量％过氧化氢或有机过氧化物。
在这些范围内的黏合剂和/或溶剂含量可以帮助提供具有特别所需的流动能力和印刷能力的烧结膏。优选地所述烧结膏包含从2至8重量％黏合剂。在一个实施方案中所述烧结膏包含约4.5重量％黏合剂。优选地所述烧结膏包含从5至30重量％溶剂。在一个实施方案中所述烧结膏包含约26重量％溶剂。所述烧结膏可以包含0至5重量％流变改进剂和/或0至2重量％活化剂和/或0至6重量％表面活性剂和/或0至2过氧化氢或有机过氧化物。所述烧结膏可以包含从62至90重量％烧结粉末。所述烧结粉末可以形成所述烧结膏的余量。
在另外的方面，本发明提供一种烧结膏，其包含：
如这里公开的烧结粉末；
有机银化合物；
溶剂；和
任选地活化剂和/或流变改进剂和/或表面活性剂和/或过氧化氢或有机过氧化物。
在烧结过程中，所述有机银化合物可以分解为金属性银，其可以增加所述烧结接头的热导率。另外，所述有机银化合物的存在增加了所述膏至所述接头界面的润湿。所述有机银化合物可以包含一种或多种的短链或长链羧酸(C＝1至30)，例如硬脂酸银、棕榈酸银、油酸银、月桂酸银、新癸酸银、癸酸银、辛酸银、己酸银、乳酸银、草酸银、柠檬酸银、醋酸银和琥珀酸银。在一些实施方案中，可以省略所述有机银化合物。
所述烧结膏优选地还包含脂肪酸和/或润湿剂，优选地以下一种或多种：短链或长链(C＝2至30)羧酸或二羧酸或羟基羧酸，更优选地月桂酸、硬脂酸、新癸酸、硬脂酸、油酸、草酸、丙二酸、琥珀酸、己二酸、马来酸、柠檬酸或乳酸；或短链或长链(C＝2至30)胺，更优选地丁胺、己胺、辛胺、十二胺或十六胺；或表面活性剂，更优选地triton X100、IGEPAL CA-630或月桂基葡糖苷。脂肪酸的存在帮助将所述膏黏合在一起。换句话说，脂肪酸的存在避免对于单独的黏合剂(例如上面讨论的环氧基树脂黏合剂)的需求。因此，在所述膏中有机物的总量较小，导致较强的最终接头。
所述烧结膏优选地还包含过氧化物。合适的过氧化物的示例包括但不限于过氧化氢或有机过氧化物，例如叔丁基氢过氧化物和叔丁基过氧-2-乙基己酸酯。过氧化物将氧引进所述膏中，其可以有助于在模片固定方法在所述模片区域下方的膏的烧结。氧还可以使在惰性气氛例如氮气氛下所述金属颗粒的烧结成为可能。所述烧结膏优选地包含至多3重量％过氧化氢或有机过氧化物，优选地从0.5至2重量％过氧化氢或有机过氧化物，更优选地从0.7至1.8重量％过氧化氢或有机过氧化物。优选液态过氧化物来控制流变和银沉降。
所述烧结膏可以包含成膜剂例如聚酰胺、聚异丁烯、聚酰胺蜡流变改进剂和蓖麻油基的触变胶。优选地所述烧结膏是基本上不含树脂的，更优选地是完全不含树脂的。树脂的存在可以降低所述银的热导率和电导率。所述溶剂优选地包含单萜醇和/或二醇和/或二醇醚，更优选地萜品醇和/或二乙二醇单正丁基醚。
所述烧结膏优选地包含：
从1至30重量％溶剂；和/或
至多50重量％有机银化合物，优选地从0.1至25重量％，更优选地从0.1至10重量％，甚至更优选地从0.1至9重量％；和/或
至多5重量％流变改进剂；和/或
至多2重量％活化剂；和/或
至多6重量％表面活性剂；和/或
至多2重量％过氧化氢或有机过氧化物。
所述烧结膏可以包含0至5重量％流变改进剂和/或0至2重量％活化剂和/或0至6重量％表面活性剂和/或0至2过氧化氢或有机过氧化物。所述烧结粉末可以形成所述烧结膏的余量。
在另外的方面，本发明提供一种烧结膜，其包含如这里描述的烧结粉末和黏合剂。可以在晶片水平、模片水平、封装/衬底水平和/或模块水平下施加所述膜。例如通过将如这里描述的烧结膏印刷至聚酯片上，加热所述膏以至少局部地去除所述溶剂并形成膜，以及随后从所述聚酯片去除所述膜，可以获得这样的膜。因为通过在略微升高的温度下简单地将所述模片压至所述膜上，所述膜能够被转移在所述模片上，所以如这里描述的膜是尤其有利的。转移的膜是在某些情况下有益地提供的替代应用方法。可以在聚合物、玻璃、金属或陶瓷的衬底上或直接在晶片上形成所述膜。所述膜可以在包含聚酯的聚合物衬底上。在聚合物衬底上可以形成所述膜，其中所述聚合物衬底包含隔离涂层(release coating)。可以通过材料的印刷或浇注来施加膏组合物从而生产所述膜。可以通过以连续层印刷来生产所述膜。或者，可以通过印刷生产所述膜以形成大量离散形状。
在另外的方面，本发明提供模片固定方法，其包含：
(i)将这里描述的烧结膜放置在模片和待接合的衬底之间；和
(ii)烧结所述烧结膜，
其中在没有施加压力的情况下进行所述烧结。
这种“低压力”或“无压力”烧结是特别有利的，因为它可以使工艺的自动化更简单。此外，可以降低对所述工件的损坏。关于采用压力烧结的方法的进一步的优点包括：用于模片放置所需的较短时间(高UPH)、用于放置的低压力要求(对于加工薄晶片高度有利)、与商用模片结合机(die-bonder)的兼容性以及在外部加热设备中烧结(分批工艺以改进UPH)。
所述烧结优选地在从150至400℃的温度下进行至多120分钟。这样的条件可以导致所述烧结膜的特别有效的烧结同时避免对所述工件的损坏。
步骤(i)优选地包含：
(a)将所述烧结膜施加至所述模片以形成具有模片侧和烧结膜侧的组件；和
(b)使所述组件的膜侧与所述衬底接触。
这样的步骤可以使所述工艺的自动化更简单，并且可以例如通过使用压型器(stamp)来进行。
优选地在从15至400℃的温度和从0.1至5MPa的压力下进行步骤(a)持续从0.1至60秒。这样的条件可以导致所述烧结膜的特别有效的施加同时避免对所述模片的损坏。
优选地在从15至400℃的温度和从0.1至40MPa的压力下进行步骤(b)持续从0.1至60分钟。这样的条件可以导致所述模片与所述衬底的特别有效的接触同时避免对所述模片或衬底的损坏。
在另外的方面，本发明提供模片固定方法，其包含：
(i)将这里描述的烧结膜放置在模片和待接合的衬底之间；和
(ii)烧结所述烧结膜，
其中进行所述烧结同时施加从0.1至40MPa的压力。
在另外的方面，本发明提供晶片结合的方法，其包含：
(i)将这里描述的烧结膜放置在两个或更多个待接合的晶片之间；和
(ii)烧结所述烧结膜，
其中在没有施加压力的情况下进行所述烧结。
在另外的方面，本发明提供将烧结膜转移至部件的方法，其包含：
将这里描述的烧结膜施加至衬底以形成具有烧结膜侧和衬底侧的组件；
使所述组件的烧结膜侧与部件接触；
将所述组件加热到从50至200℃的温度；
将从1至5MPa的压力施加至所述组件持续从0.1秒至60分钟；和
从所述烧结膜分离所述衬底。
所述衬底可以是聚合物的。所述烧结膜可以是与所述部件基本上相同的大小。所述部件可以是LED。
在另外的方面，本发明提供用于模片固定的方法，其包含：将这里描述的烧结膜施加至衬底；将模片放置在所述膜上以形成组件；将小于2MPa的压力施加至所述组件；和在100至400℃的温度下烧结所述组件持续0.1秒至5分钟，施加小于3MPa的压力。还可以在175至400℃的温度下以无压力方式烧结相同的组件，其使用提供用于启动和完成烧结的适当程度的热的各种工艺和设备。
在另外的方面，本发明提供用于模片固定固定的方法，其包含：将这里描述的烧结膜施加至衬底；将模片放置在所述膜上以形成组件；将小于5MPa的压力施加至所述组件；和在100至400℃的温度下烧结所述组件持续0.1秒至60分钟，施加小于40MPa的压力。还可以在175至400℃的温度下以无压力方式烧结相同的组件，其使用提供用于启动和完成烧结的适当程度的热的各种工艺和设备。
在另外的方面，本发明提供用于模片固定固定的方法，其包含：将这里描述的烧结膜施加至晶片的背侧上；将所述晶片切片以形成多个模片；将至少一个模片放置在衬底上以形成组件；将大于1MPa的压力施加至所述组件；和在100至400℃的温度下烧结所述组件持续0.1秒至60分钟。还可以在175至400℃的温度下以无压力方式烧结相同的组件，其使用提供用于启动和完成烧结的适当程度的热的各种工艺和设备。
在另外的方面，本发明提供用于晶片结合的方法，其包含：将这里描述的烧结膜施加至晶片的背侧上；将另一个相同或不同类型的晶片放置在含有晶片的可烧结的Ag膜上以形成组件；将大于>0.1MPa的压力施加至所述组件；和在100 400℃的温度下烧结所述组件持续0.25秒至120分钟。还可以在175至400℃的温度下以无压力方式烧结相同的组件，其使用提供用于启动和完成烧结的适当程度的热的各种工艺和设备。
在另外的方面，本发明提供用于晶片结合的方法，其包含：将所述烧结膜施加至晶片的背侧上；将另一个相同或不同类型的晶片放置在含有晶片的所述烧结膜上以形成组件；将小于40MPa的压力施加至所述组件；和在100至400℃的温度下烧结所述组件持续0.25秒至120分钟。还可以在175至400℃的温度下以无压力方式烧结相同的组件，其使用提供用于启动和完成烧结的适当程度的热的各种工艺和设备。
在另外的方面，本发明提供如这里描述的烧结粉末或如这里描述的烧结膏或膜在选自下列的方法中的用途：模片固定(例如芯片至板、芯片至衬底、芯片至散热器、芯片至夹具)，晶片至晶片结合(例如芯片至散热器)，反射层印刷，气密以及近气密的密封(例如用于封装和周边密封)，互连线的生产(例如电路、焊点)，在半导体器件和衬底内的孔填充(viafilling)，和倒装芯片以及晶片凸块。
在另外的方面，本发明提供制造烧结接头的方法，其包含以下步骤：
在两个或更多个待接合的工件附近提供如这里描述的烧结粉末或如这里描述的烧结膏或膜；和
将所述烧结粉末或烧结膏或膜加热以至少局部地烧结所述金属。
有利地，可以在大气压力下进行所述加热步骤。可以在低压力(在约175至250℃的温度下典型地为1-5MPa持续0.1至60秒)下将所述烧结粉末或烧结膏或膜放置在所述工件附近。
优选地在至少140℃、更优选地从150至350℃、甚至更优选地从160至300℃的温度下进行所述加热步骤。低于140℃的温度可能不导致在所述烧结粉末中的颗粒的充分烧结和/或可能不导致通过蒸发和/或烧掉的所述有机物的充分去除。高于350℃的温度可以导致对所述工件的损坏。
在另外的方面，本发明提供制造如这里描述的烧结粉末的方法，其包含以下步骤：
提供金属盐溶液；
使所述金属盐溶液与封端剂接触；和
使金属颗粒沉淀以至少局部地涂覆有所述封端剂。
例如可以通过过滤从所述溶剂回收沉淀的金属颗粒。所述金属盐溶液的一个示例是金属硝酸盐溶液。
可以使用还原剂进行沉淀步骤。还原剂在引起所述金属颗粒的沉淀方面是特别有效的。特别合适的还原剂包括，例如肼(例如水合肼)和硼氢化钠。
可以使用极性溶剂例如甲醇或丙酮洗去过量的所述封端剂。
如将理解的，与现有技术相比，这里公开的方法、粉末、膏和膜与大量益处相联系。特别地，当用所述膏印刷时，无塌陷现象、无桥接、印刷沉积物中无气泡、无流出和孔阻塞。此外，提供从80-90微米的膏高度与平整沉积物(无折角和无起伏)是可能的。因此，包括黏合剂(例如树脂)的所述膏的益处包括：
无压力烧结
在标准SMT线中的加工能力
平整以及均匀的表面布局
模片剪切强度平均>20MPa
无界面失效模式
室温稳定性＝最小1个月
热循环：可接受的接头强度至多1500次循环(-40C至+125C，10分钟停留)。
针和喷嘴可分配
膜形式因素
除上面提及的益处之外，含有有机银化合物的膏具有一些另外的益处，其在以下列出：
高模片剪切强度(25至45MPa)
高热导率(>200W/mK)
可销转移
良好的高热性质
现在将参考下列非限制性图片描述本发明，其中：
图1显示(a)使用带式浇注机制备的大面积Ag膜(实施例1)并且插图显示PET上的所述膜的矩形件，(b)18-20 20μm厚度的独立式干燥膜的光学显微图像，(c-e)PET上的实施例2的独立式干燥膜的光学显微图像(30-40μm厚度)以及(f-g)PET上的实施例5的独立式干燥膜的光学显微图像。
图2显示用于本发明的烧结膜的模片固定应用的模片固定工艺“压力烧结(PS)”对“压力放置和无压力烧结(PPPS)”工艺步骤的示意性表示。
图3显示用于本发明的烧结膜的模片固定应用的“压力放置和无压力烧结”工艺步骤的示意性表示和其典型的工艺参数以及它们的相关性。
图4显示使用“压力放置和无压力烧结模片固定工艺”的使用实施例2的膜固定在Ni/Ag涂覆的DBC上的3mm×3mm Ni/Au涂覆的Si模片的模片剪切随着a)放置时间和b)工具温度而变化的图。
图5显示使用“压力放置和无压力烧结模片固定工艺”在1s放置时间下使用实施例2的膜固定在Ni/Ag涂覆的DBC上的3mm×3mm Ni/Au涂覆的Si模片横截面区域的SEM图像。
图6显示在Ni/Au涂覆的Si晶片上转移的Ag膜和转移后PET上剩余的膜。
图7显示来自通过可商购的切片机制备的使用实施例2的18-20μm膜的热压结合的(a)Ni/Au涂覆的4”Si晶片对和(b)Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的切片(3mm×3mm)样品的图像。没有观察到碎裂。
图8显示使用实施例1的18-20μm膜的热压结合的Ni/Au涂覆的4”Si晶片对的C-SAM图像。
图9显示揭示BLT和显微结构的切片样品的横截面区域的SEM图像。在不同施加的压力下由使用实施例1的18-20μm膜的热压结合的Ni/Au涂覆的Si晶片对制备这些样品：0.5MPa(顶部左边)、1MPa(顶部中间)、2MPa(顶部右边)、5MPa(底部左边)和10MPa(底部中间)。
图10显示在没有后加热步骤(步骤4)的情况下使用实施例1的18-20μm膜的热压结合的Ni/Au涂覆的4”Si晶片对的C-SAM图像。
图11显示使用实施例1的18-20μm膜的热压结合的Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的示意性CSAM图像。
图12显示由使用实施例2的30-40μm膜的热压结合的Ni/Au涂覆的4”Si晶片制备的离子抛光模片的横截面区域的SEM图像。
图13显示使用实施例2的膜的热压结合的Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的C-SAM图像。所述C-SAM图像确认了良好的结合以及在结合的晶片中不存在分层或空隙。
图14显示由使用实施例2的30-40μm膜的热压结合的4”Si晶片与Ni/Au涂覆的4”CuW晶片制备的离子抛光模片的横截面区域的SEM图像。
图15显示由使用实施例1的膜和实施例2的膜的热压结合的Ni/Au涂覆的4”Si晶片对和Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW制备的3mm×3mm大小的模片的模片剪切图。
现在将参考下列非限制性实施例描述本发明。
实施例1
混合0至8％树脂或聚合物、0至2％成膜剂和5至30％溶剂混合物以得到均匀溶液。将0至2％润湿剂、0至2％有机过氧化物添加至此混合物，然后添加65至85％的前述银纳米粉末(即具有从5至75nm的平均最长尺寸)并且使用轨道式混合器在1000rpm下进行混合。在混合后，在三辊研磨机中研磨混合物持续几分钟以获得均匀的膏。
实施例2
在罐中混合0至2％成膜剂、0至5％银金属有机化合物(Ag MOC)、5至30％溶剂混合物。将0至2％润湿剂、0至2％有机过氧化物添加至此混合物，然后添加65至85％的前述银纳米粉末(即具有从5至75nm的平均最长尺寸)。使用轨道式混合器在1000rpm下混合此混合物。在混合后，在三辊研磨机中研磨所述混合物持续几分钟以获得均匀的膏。
实施例3
在罐中混合0至2％成膜剂、0至8％树脂或聚合物、0至5％银金属有机化合物(AgMOC)和5至30％溶剂混合物。将0至2％润湿剂、0至2％有机过氧化物添加至此混合物，然后添加65-85％的前述银纳米粉末(即具有从5至75nm的平均最长尺寸)。使用轨道式混合器在1000rpm下混合此混合物。在混合后，在三辊研磨机中研磨所述混合物持续几分钟以获得均匀的膏。
实施例4
在罐中混合0至2％成膜剂、0至8％树脂或聚合物、0至7％银金属有机化合物(AgMOC)和5至30％溶剂混合物。将0至2％润湿剂、0至2％有机过氧化物添加至此混合物，然后添加65至95％的银微米颗粒(即具有从100nm至50μm的平均最长尺寸)。使用轨道式混合器在1000rpm下混合此混合物。在混合后，在三辊研磨机中研磨所述混合物持续几分钟。
实施例5
在罐中混合0至2％成膜剂、0至8％树脂或聚合物、0至7％银金属有机化合物(AgMOC)和5至30％溶剂混合物。将0至2％润湿剂、0至2％有机过氧化物添加至此混合物，然后添加65-95％的银纳米颗粒(即具有从5至75nm的平均最长尺寸)和银微米颗粒(即具有从100nm至50μm的平均最长尺寸)的混合物。使用轨道式混合器在1000rpm下混合此混合物。在混合后，在三辊研磨机中研磨所述混合物持续几分钟。
发现实施例1-5的烧结银样品的热导率在100-250W·m-1·K-1的范围内。通过在没有施加的压力情况下在250℃下加热实施例1-5中的膏持续60分钟来制备并且使用NetzschLFA 447 Nanoflash测量所述烧结银样品的热导率。使用下列公式计算热导率k(W·m-1·K-1)：K＝αρcp，其中α是热扩散率(m2·s-1)，ρ是所述材料的密度(Kg·m-3)以及cp是比热容(J·kg-1·K-1)。
膜制备工艺：
通过印刷在硅涂覆的聚酯片上来制备膜：使用采取辊对辊(roll to roll)方式的可商购的带式浇注机、使用提供有带式浇注机的微计量控制的刮刀组件或通过使用刮刀手动雕版印花。
可商购的带式浇注机：
使用可商购的带式浇注机将实施例1的膏印刷在硅涂覆的聚酯片上，并且将所述膏在130℃下在其被加热的表面上采取辊对辊方式进行干燥。为了完全干燥，所述膜耗时10至15分钟。使用提供有带式浇注机的刮刀组件的间隙设置来控制所述膜的厚度。通过改变微计量控制的刮刀组件的间隙设置制备了18-20μm和33-35μm的膜厚度。图1(a)显示使用带式浇注机制备的大面积膜并且插图显示在PET上的所述膜的矩形件。图1(b)显示18-20 20μm厚度的独立式干燥膜的光学显微图像。还能够通过简单地改变刮刀组件的间隙设置容易地获得具有厚度>5μm的膜。
手动雕版印花：
使用刮刀手动地将实施例2的膏雕版印花在硅涂覆的聚酯上。在60-90℃下在炉中干燥这些制备状态的膜持续30-90分钟。发现实施例2的这样的手动印刷膜的厚度为20-60μm。在图1(c-e)和图1(f-g)中分别显示在PET(30-40μm厚度)上的实施例2和实施例5的独立式干燥膜的光学显微图像。或者，还能够使用采用辊对辊方式的可商购的带式浇注机将膜印刷在硅涂覆的聚酯片上并且能够使用提供有带式浇注机的微计量控制的刮刀组件的间隙设置控制所述膜的厚度。
用于模片固定的Ag膜的应用：
本发明的烧结膜能够用于电子部件的接合，其使用各种基于现有的模片固定工艺(压力烧结(PS)工艺)的银烧结，包括如专利申请US 13/287820中描述的工艺，其公开内容通过引用并入本文。另外，能够在模片固定“压力放置和无压力烧结(PPPS)工艺”中使用本发明的烧结膜。图2显示使用本发明的烧结膜的“压力烧结(PS)”的一般工艺步骤对“压力放置和无压力烧结(PPPS)”工艺步骤的示意性表示。与PS工艺相比，对于这种新的PPPS工艺存在几个额外的优势，即较短的用于模片放置所需的时间(高UPH)、用于放置的低压力要求(对于加工薄晶片高度有利)、与商用模片结合机以及在外部加热设备中烧结(分批工艺以改进UPH)的兼容性。另外，在基于烧结的模片固定工艺的过程中，这些可烧结的Ag膜还能够用于需要显著较高的压力(>5MPa)的PS工艺。
压力放置和无压力烧结(PPPS)工艺：
使用新的银烧结低温和低压力模片固定工艺“压力放置和无压力烧结(PPPS)工艺”，能够使用本发明的所述烧结膜用于电子部件的接合。图3显示用于纳米Ag膜的模片固定应用的“压力放置和无压力烧结工艺”步骤的示意性表示，其典型的工艺参数和它们的相关性。使用这种压力放置和无压力烧结工艺并使用这种可烧结的Ag膜的电子部件的接合是非常通用的并且基于应用的属性以及热机械性能、电性能和热性能的要求能够优化时间、温度和压力的准确组合。
PPPS模片固定工艺步骤：
除非其他地方另外单独说明，总体的结合工艺可以典型地包括：例如1)膜转移，2)压力辅助模片放置和3)无压力烧结。
(1)膜转移：通过使用时间、压力以及工具和板的温度的优化组合的压型工艺将可烧结的Ag膜转移至所述模片上。典型的工艺参数为：
工具温度：室温至400℃
板温度：室温至400℃
压力：0.1至5MPa
时间：0.1至60秒
(2)压力辅助模片放置：使用时间、压力以及工具和板温度的优化组合将含有可烧结的Ag的模片放置在DBC(直接结合的铜)衬底上。典型的工艺参数为：
工具温度：室温至400℃
板温度：室温至400℃
压力：0.1至40MPa
时间：0.1至60分钟
额外加热时间：在放置后(在没有施加任何外部压力的情况下)立即可以包括额外的0-60分钟
(c)无压力烧结：在外部炉或热板中进行无压力烧结。在下面总结了工艺参数：
烧结温度：150-400℃
烧结时间：0至120分钟
压力辅助烧结(PS)工艺：
使用压力辅助烧结模片固定工艺能够将这里描述的烧结膜用于电子部件的接合。使用这种压力辅助烧结工艺并使用这种可烧结的Ag膜的电子部件的接合是非常通用的并且基于应用的属性以及热机械性能、电性能和热性能的要求能够优化时间、温度和压力的准确组合。
PS模片固定工艺步骤：
除非其他地方另外单独说明，总体的结合工艺可以典型地包括：例如1)膜转移，2)压力辅助模片放置和烧结。
(1)膜转移：通过使用时间、压力以及模具和板的温度的优化组合的压型工艺将可烧结的Ag膜转移至所述模片上。典型的工艺参数为：
工具温度：室温至400℃
板温度：室温至400℃
压力：0.1至5MPa
时间：0.1至60秒
(2)压力辅助模片放置和烧结：使用时间、压力以及模具和板的温度的优化组合将含有可烧结的Ag的模片放置在DBC衬底上。典型的工艺参数为：
工具温度：室温至400℃
板温度：室温至400℃
压力：0.1至40MPa
时间：0.1秒至60分钟
额外加热时间：在放置后(在没有施加任何外部压力的情况下)立即可以包括额外的0-60分钟
结合模片的一般表征工艺：
采用模片剪切、热冲击和循环、结合层厚度测量和在离子抛光后使用SEM的显微结构分析来表征所述结合的模片。
模片固定应用1(PPPS)：
对于使用压力烧结工艺(工艺示意图在图3中显示)的电子部件的接合，展示了实施例2形成的烧结膜的应用。这样的应用的一个示例展示了使用可烧结的Ag膜并使用实验室手动模片结合机将Ni/Au涂覆的3mm×3mm Si模片固定在Au或Ag涂覆的DBC衬底上。图4显示使用“压力放置和无压力烧结模片固定工艺”的使用实施例22形成的烧结膜固定在Ni/Ag涂覆的DBC上的3mm×3mm Ni/Au涂覆的Si模片的模片剪切结果随着a)放置时间和b)工具温度的变化。使用下列工艺参数用于模片固定：
(1)膜转移：
工具温度：100-200℃
板温度：室温
压力：1.5MPa
时间：1秒
(2)压力辅助模具放置
工具温度：100-200℃
板温度：200℃
压力：2
时间：0.25至1.5秒
额外的加热时间：无
(3)无压力烧结：
烧结时间：225℃
烧结时间：60分钟
图5显示使用实施例2形成的烧结膜与1s放置时间的由固定在Ni/Ag涂覆的DBC上的3mm×3mm Ni/Au涂覆的Si模片制备的离子抛光模片的横截面区域的SEM图像。结合层的SEM显示具有良好充填率的烧结银颗粒的颈缩。
模具固定应用2(PS)：
对于使用压力辅助烧结工艺的电子部件的接合，展示了实施例5形成的烧结膜的应用。这样的应用的一个示例展示了实施例5形成的烧结膜使用实验室手动模片结合机将Ni/Au涂覆的3mm×3mm Si模片固定至Au或Ag涂覆的DBC衬底上或Ag涂覆的Cu引线框架衬底上：通过在250℃下施加烧结压力5-20MPa持续30-90秒烧结时间。模片剪切结果显示强结合(>40MPa)并且结合层的SEM显示具有良好充填率的烧结银颗粒的颈缩。
用于晶片结合的Ag膜的应用：
使用实施例1形成的膜和实施例2形成的膜在250℃下使用实验室压机并使用1MPa压力，展示Ni/Au涂覆的4”Si晶片(Si烧结Ag-Si)对以及Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片(Si烧结Ag-CuW)的热压结合应用。除非其他地方另外说明，对于使用这些膜的晶片结合(应用1-4)的全部展示，遵循下列结合工艺。
晶片结合工艺步骤：
除非其他地方另外单独说明，总体的结合工艺可以典型地包括：例如1)膜转移，2)晶片堆叠体形成，3)晶片结合以及4)后加热。
1)膜转移
在80-150℃和1MPa压力下持续5分钟从PET表面转移所述Ag膜至Ni/Au涂覆的Si或Ni/Au涂覆的CuW。去除剩余的Ag膜和PET并且将Ag转移的Ni/Au涂覆的Si晶片或Ni/Au涂覆的CuW晶片用于堆叠体形成。图6显示在Ni/Au涂覆的Si晶片上转移的Ag膜和在转移后PET上剩余的膜的图像。
2)晶片堆叠体形成
通过将Ni/Au涂覆的Si晶片放置在通过步骤1的Ag膜转移的Ni/Au涂覆的Si晶片或Ni/Au涂覆的CuW上来制备堆叠体。随后在100-150℃和1MPa压力下加热所述堆叠体持续5-15分钟。
3)晶片结合
使用通过步骤2加工的晶片堆叠体用于在250℃和1MPa压力下结合持续15分钟。
4)后加热
使用通过步骤3在250加工的晶片堆叠体用于在没有任何施加压力的情况下在250℃下后加热持续45分钟。在这些工艺后，将结合的晶片冷却至室温并且用于进一步表征。
结合的晶片的一般表征工艺：
使用C-SAM检查所有的结合的晶片的分层和空隙。随后将这些结合的晶片切片以获得不同的模片大小(例如3mm×3mm和10mm×10mm)用于各种表征，例如模片剪切、热冲击和循环、结合层厚度测量以及在离子抛光后使用SEM的显微结构分析。例如，图7显示使用可商购的切片机由使用实施例1的18-20μm膜的热压结合的(a)Ni/Au涂覆的4”Si晶片对以及(b)Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片制备的切片(3mm×3mm)样品的图像。对于所有这些结合的晶片没有观察到脱结和碎裂，这表明良好的结合。
晶片结合应用1(Si-AF1-Si)
在不同施加压力下的结合：
使用实施例1的18-20μm膜在250℃下使用实验室压机使用0.5MPa、1MPa、2MPa和5MPa压力展示了一对Ni/Au涂覆的4”Si晶片的热压结合。对于10MPa压力，使用Ni/Au涂覆的2”Si晶片对。使用C-SAM检查了所有结合的晶片的分层和空隙并且确认不存在分层和空隙。图8显示使用实施例1的18-20μm膜的热压结合的Ni/Au涂覆的4”Si晶片对的C-SAM图像。所述C-SAM图像确认良好结合并且在结合的晶片中不存在分层和空隙。随后将这些结合的晶片切片至不同的模片大小例如3mm×3mm、10mm×10mm并且用于确定模片剪切、结合层厚度测量和在离子抛光后使用SEM的显微结构分析。为了研究压力对烧结银层的显微结构和结合线厚度(BLT)的影响，将这些晶片切片并且使用SEM进行研究。图9显示在不同施加压力：(a)0.5MPa、b)1MPa、c)2MPa、d)5MPa和e)10MPa)下使用实施例1的18-20μm膜由热压结合的Ni/Au涂覆的Si晶片对制备的离子抛光模片的横截面区域的SEM图像。结合层的SEM图像显示具有良好充填率的烧结银颗粒的颈缩。发现BLT在低压力区域(0.5至2MPa)是高度依赖压力的，其后压力对BLT的影响变成较不明显。相反，遍及实验施加的压力范围，从晶体大小、交联近邻和密度可见这些烧结银的显微结构是高度依赖压力的。如能够看到的，在5MPa和10MPa的压力下，其产生高度致密和交联的结构。结合模片的模片剪切显示块体或界面失效并且因此能够总结出：与结合的硅晶片材料相比，烧结银结合材料是非常强的。
在没有后加热的情况下结合：
为了确认后加热步骤的必要性，发明人使用实施例1形成的18-20μm膜在250℃下使用1MPa压力，使用实验室压机在没有进行后加热步骤(步骤4)的情况下结合了两对Ni/Au涂覆的4”Si晶片。如在图10中能够清楚地看到的，在这些晶片中存在几个分层区域。
晶片结合应用2(Si-AF1-CuW)
在250℃下使用实验室压机使用1MPa压力使用实施例1形成的18-20μm膜展示了Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的热压结合。图11显示使用实施例1的18-20μm膜的热压结合的Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的C-SAM图像。所述C-SAM图像确认了良好的结合并且在结合的晶片中不存在分层和空隙。随后将这些结合的晶片切片至不同的模片大小例如3mm×3mm、10mm×10mm并且用于确定模片剪切、结合层厚度测量和在离子抛光后使用SEM的显微结构分析。为了研究膜厚度对烧结银层的结合线厚度(BLT)的影响，发明人选择实施例1形成的18-20μm和32-35μm膜在250℃下使用实验室压机使用1MPa压力来结合4”Si晶片与Ni/Au涂覆的4”CuW晶片。结合层的SEM显示具有良好充填率的烧结银颗粒的颈缩。发现BLT随着膜厚度的降低而降低。所述结合的模片的模片剪切显示块体或界面失效并且因此能够总结出：与结合的硅晶片材料相比，烧结银结合材料是非常强的。
晶片结合应用3(Si-AF2-Si):
在250℃下使用实验室压机使用1MPa压力使用实施例2的30-40μm膜展示了一对Ni/Au涂覆的4”Si晶片的热压结合。使用C-SAM检查所有结合的晶片的分层和空隙并且确认不存在分层和空隙。使用实施例2的30-40μm膜的热压结合的Ni/Au涂覆的4”Si晶片对的C-SAM图像确认了良好的结合并且在结合的晶片中不存在分层和空隙。随后将这些结合的晶片切片至不同的模片大小例如3mm×3mm、10mm×10mm并且用于模片剪切、和结合层厚度测量和在离子抛光后使用SEM的显微结构分析。图12显示在1MPa的施加压力下由使用实施例2的30-40μm膜的热压结合的Ni/Au涂覆的4”Si晶片对制备的离子抛光模片的横截面区域的SEM图像。结合层的SEM图像显示具有良好充填率的烧结银颗粒的颈缩。结合的模片的模片剪切显示块体或界面失效并且因此能够总结出：与结合的硅晶片材料相比，烧结银结合材料是非常强的。
晶片结合应用4(Si-AF2-CuW)：
在250℃下使用实验室压机使用1MPa压力使用实施例2的30-40μm膜展示了Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的热压结合。图13显示使用实施例2的30-40μm膜的热压结合的Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片的C-SAM图像。所述C-SAM图像确认了良好的结合并且在结合的晶片中不存在分层和空隙。随后将这些结合的晶片切片至不同的模片大小例如3mm×3mm及10mm×10mm并且用于模片剪切、结合层厚度测量和在离子抛光后使用SEM的显微结构分析。图14显示在250℃下使用1MPa压力由使用实施例2的30-40μm膜的热压结合的4”Si晶片与Ni/Au涂覆的4”CuW晶片制备的离子抛光模片的横截面区域的SEM图像。结合层的SEM显示具有良好充填率的烧结银颗粒的颈缩。结合的模片的模片剪切显示块体或界面失效，并且因此能够总结出：与结合的硅晶片材料相比，烧结银结合材料是非常强的。
结合的晶片的机械与热机械表征
模片剪切结果：
为了研究结合的烧结Ag层的机械结合强度，将热压结合的晶片切片至3mm×3mm大小的模片并且进行模片剪切测试。结合的模片的模片剪切显示块体或界面失效，并且因此能够总结出：与结合的硅晶片材料相比，所述烧结银结合材料是非常强的。图15显示在250℃下使用1MPa压力由使用实施例1形成的膜和实施例2形成的膜的热压结合的Ni/Au涂覆的4”Si晶片对以及Ni/Au涂覆的4”Si晶片与Ni/Au涂覆的4”CuW晶片制备的3mm×3mm大小的模片的模片剪切值的对比。
热冲击结果：
为了研究热应力对使用烧结纳米银膜的结合的晶片和模片的影响，在250℃和1MPa压力下使用实施例1形成的膜以及实施例2形成的膜的热压结合的4”Si晶片以及Ni/Au涂覆的4”CuW晶片以及10mm×10mm模片经受热冲击试验，其遵循JESD22-A104-B测试条件B，Soak Mode2(-55至+125℃，5分钟停留时间，1000次循环)。在1000次循环后结合的晶片和模片两者的C-SAM图像揭露在结合的晶片中没有任何分层、空隙或裂纹。
热循环结果：
为了研究热应力对使用烧结纳米银膜的结合的模片的影响，在250℃和1MPa压力下来自使用实施例1形成的膜以及实施例2形成的膜的热压结合的4”Si晶片与Ni/Au涂覆的4”CuW晶片的10mm×10mm切片样品经受热循环试验，其遵循IPC 9701-A Standard TC3/NTC-C Profile(-40至+125℃，15分钟停留时间，1000次循环)。在1000次循环后这些模片的C-SAM图像揭露在结合的晶片中没有任何分层、空隙或裂纹。
本发明的烧结粉末、烧结膜和烧结膏的其他应用如下：
1.基于可印刷的膏和膜两者用于竖直LED设计、薄膜倒装芯片设计和红色LED设计的晶片至晶片结合层。对于在低温下(低于250℃以及还低于200℃)的晶片至晶片结合存在显著的需求，其中在结合后所述结合层呈现非常高的温度性质。在LED晶片结合的情况下，这能够完成，例如在薄膜倒装芯片或竖直薄膜或截顶的倒金字塔(truncated invertedpyramid)LED的情况下，其中CTE失配并且因此能够使应变和缺陷产生最小化，同时允许采用各种用于增强装置的光输出和电效率的先进材料的高温后加工。进一步地，所述高温和所述结合层的高热导率以及电导率尤其允许在其他优势中出众的热转移、器件的高温工作以及出众的电流扩展。通过晶片背面上的所述材料的膜的层叠然后在标准晶片结合机或压机中的温度和压力加工，能够完成这样的晶片结合。进行所述加工的另一种方式包括在所述晶片背面上印刷共形的膏层，然后在温度和压力条件下，在标准晶片结合机或压机中干燥并结合。用于这样的晶片结合的其他应用包括功率半导体晶片、硅通孔技术(TSV)应用、堆叠模片应用、MEMS、集中光伏和其他应用。低温烧结使高CTE失配堆叠体以及温度敏感材料堆叠体、热电材料和压电材料的组件成为可能。
2.半导体模片的固定(倒装芯片或线结合)至各种衬底上，例如DBC(直接结合铜)、DPC(直接镀覆铜)、MCPCB(金属芯PCB)、FR4、铜引线框架、柔性PCB和衬底、铜和铝散热器、夹具等)。应用包括由各种化合物半导体材料制成的LED模片(发光二极管例如横向、竖直薄膜或倒装芯片种类)，由硅制成的功率模片，集中光电化合物半导体电池(例如多结电池)，在功率模块中使用的碳化硅和氮化镓，以及离散器件，全部类型的MEMS(微机电传感器)器件，半导体和堆叠模片以及其他应用例如热电材料和光电材料。
(a)通过印刷至所述衬底上然后通过模片结合机或取放机器的模片放置，并且在回流炉带或箱式炉中烧结，能够完成这样的半导体或其他模片元件的固定。通过分配所述膏然后如上概述的模片放置和烧结，或在由所述材料制成的膜的模片背面上进行膜转移和层叠，然后模片放置以及附加至所述衬底上，随后烧结，也能够完成这样的半导体和模片元件的固定。通过将凸块印刷至所述衬底上、放置所述模片然后烧结，能够组装倒装芯片模片。低温烧结使高CTE失配堆叠体以及温度敏感材料堆叠体的组件成为可能。
3.各种类型(例如底部终端部件如LGA、QFN、QFP等)半导体封装固定至各种衬底上，例如DBC(直接结合铜)、DPC(直接镀覆铜)、MCPCB(金属芯PCB)、FR4、柔性PCB和衬底、铜和铝散热器、夹具等)。应用包括各种类型(例如陶瓷基板LED、具有引线框架构造的SMD LED等)的LED封装、功率模块以及离散器件、全部类型的MEMS(微机电传感器)封装、半导体和堆叠的模片封装和其他应用。
(a)通过印刷至所述衬底上，然后通过具有Z高度调节和/或承压能力的标准取放机器的封装放置，并且在回流炉带或箱式炉中烧结，能够完成这样的半导体或其他封装的固定。低温烧结使高CTE失配堆叠体以及温度敏感材料堆叠体的组件成为可能。
4.单独地和与倒装芯片连接体一起的互连线(电路图、焊点等)的生产。例如用于互连线的应用包括LED板和发光体，其中能够通过各种印刷(例如雕版印花)或分配或喷射技术施加所述互连线。在LED应用的情况下，这样的互连线能够充当运送往返所述器件的电子以及来自所述器件的热的电导体和热导体两者。进一步，能够以与用于固定倒装芯片或线结合器件的连接体相同的步骤直接应用这样的互连线。这样的连接体的另一个示例是太阳能电池(硅基或薄膜基)，其中网格图案的连接线能用来收集所产生的电子并且还将一个电池与另一个连接。
5.用于LED和光学应用的反射层印刷。能够使用所述材料来将反射层印刷至衬底上，例如DBC(直接结合铜)、DPC(直接镀覆铜)、MCPCB(金属芯PCB)、FR4、柔性PCB和衬底、铜和铝散热器、夹具等)，以便提供光输出增强并且因此提供LED和其他光学系统的发光效率增强。通过所述材料的雕版印花或丝网印刷，喷射或分配或膜层叠能够形成这样的反射层。
6.用于LED、MEMS、OLED和PV应用以及一般半导体封装的封装、周边密封等的气密以及近气密密封。存在用于LED、OLED、MEMS和薄膜PV封装的气密密封(以使所述设备免受水分侵入)的显著需求。采用合适的施加和烧结，所述材料能够呈现气密或近气密的密封行为。在用于以上器件的制造工艺的各种阶段中能够施加所述材料：在晶片水平下进行晶片结合，或在封装工艺中通过膜层叠和结合，或膏喷射/分配然后是盖子或玻璃或层叠覆盖物的固定和烧结。低温烧结使高CTE失配堆叠体的组件以及温度敏感材料堆叠体的组件成为可能。
7. ACF替代。通过雕版印花、凸块转移或高速喷射分配能够将所述材料的凸块的阵列传递至所述衬底。在没有明确的高程度对准的情况下，能够使用这样的阵列来充当组装器件的电接触部。

Claims (45)

1.一种烧结粉末，其包含：
具有从100nm至50μm的平均最长尺寸的第一类型的金属颗粒。
2.权利要求1所述的烧结粉末，其中所述第一类型的金属颗粒的至少一部分至少局部地涂覆有封端剂，优选包含羧酸酯和/或胺官能团的封端剂。
3.权利要求1或2所述的烧结粉末，其中所述第一类型的金属颗粒的封端剂包含直链或支链脂肪酸，优选油酸。
4.权利要求1或2所述的烧结粉末，其包含至多5重量％封端剂，优选地从0.1至3重量％封端剂，更优选地约0.5重量％封端剂。
5.在前权利要求任一项所述的烧结粉末，其中所述第一类型的金属颗粒具有从100nm至20μm的平均最长直径。
6.在前权利要求任一项所述的烧结粉末，其中所述第一类型的金属颗粒具有从1至3μm的D50。
7.在前权利要求任一项所述的烧结粉末，其中所述第一类型的金属颗粒具有从3.5至5.5g/cc的振实密度。
8.在前权利要求任一项所述的烧结粉末，其还包含具有小于100nm的平均最长尺寸的第二类型的金属颗粒，其中所述第二类型的金属颗粒至少局部地涂覆有封端剂。
9.权利要求8所述的烧结粉末，其中所述第二类型的金属颗粒具有从5至75nm的平均最长尺寸。
10.权利要求8或9所述的烧结粉末，其包含从1至19重量％的所述第一类型的金属颗粒和从81至99重量％的所述第二类型的金属颗粒，优选地从5至15重量％的所述第一类型的金属颗粒和从85至95重量％的所述第二类型的金属颗粒。
11.在前权利要求任一项所述的烧结粉末，其中所述第一类型的金属颗粒和/或第二类型的金属颗粒包含银或其合金或银涂覆颗粒的核-壳结构。
12.权利要求8至11任一项所述的烧结粉末，其中所述第二类型的金属颗粒的封端剂包含胺和/或羧酸酯官能团。
13.权利要求8至12任一项所述的烧结粉末，其中所述第二类型的金属颗粒的封端剂包含直链或支链脂肪胺，优选辛胺。
14.在前权利要求任一项所述的烧结粉末，其包含：
从1至10重量％的具有从100nm至20μm的平均最长尺寸的第一类型的金属颗粒，所述金属颗粒至少局部地涂覆有涂覆有油酸封端剂；和
从90至99重量％的具有从5至75nm的平均最长尺寸的第二类型的金属颗粒，其中所述第二类型的金属颗粒至少局部地涂覆有辛胺封端剂。
15.一种烧结粉末，其包含：
具有小于100nm的平均最长尺寸的金属颗粒，
其中所述金属颗粒的至少一些至少局部地涂覆有封端剂。
16.权利要求15所述的烧结粉末，其中所述金属颗粒具有从5至75nm的平均最长尺寸。
17.权利要求15所述的烧结粉末，其中所述金属颗粒具有从500nm至5μm的平均最长尺寸。
18.权利要求15至17任一项所述的烧结粉末，其中所述封端剂包含胺和/或羧酸酯官能团。
19.权利要求15至18任一项所述的烧结粉末，其中所述封端剂包含直链或支链脂肪胺，优选辛胺。
20.使用在前权利要求任一项所述的烧结粉末形成的烧结接头。
21.发光二极管(LED)、微机电系统(MEMS)、有机发光二极管(OLED)或光伏电池，其包含权利要求20所述的烧结接头。
22.一种烧结膏，其包含：
权利要求1至19任一项所述的烧结粉末；
黏合剂；
溶剂；和
任选地流变改进剂和/或有机银化合物和/或活化剂和/或表面活性剂和/或润湿剂和/或过氧化氢或有机过氧化物。
23.权利要求22所述的烧结膏，其中所述黏合剂包含环氧基树脂。
24.权利要求22或权利要求23所述的烧结膏，其中所述溶剂包含单萜醇和/或二醇和/或二醇醚，优选地萜品醇和/或二乙二醇单正丁基醚。
25.权利要求22至24任一项所述的烧结膏，其包含：
从1至15重量％黏合剂；和/或
从1至30重量％溶剂；和/或
至多5重量％流变改进剂；和/或
至多10重量％有机银化合物；和/或
至多2重量％活化剂；和/或
至多6重量％表面活性剂；和/或
至多2重量％过氧化氢或有机过氧化物。
26.一种烧结膏，其包含：
权利要求1至19任一项所述的烧结粉末；
有机银化合物；
溶剂；和
任选地活化剂和/或流变改进剂和/或表面活性剂。
27.权利要求26所述的烧结膏，其包含：
从1至30重量％溶剂；和/或
至多50重量％有机银化合物，优选地从0.1至25重量％，更优选地从0.1至10重量％，甚至更优选地从0.1至9重量％；和/或
至多5重量％流变改进剂；和/或
至多2重量％活化剂；和/或
至多6重量％表面活性剂；和/或
至多2重量％过氧化氢或有机过氧化物。
28.权利要求22至27任一项所述的烧结膏，其中所述有机银化合物包含草酸银、乳酸银、琥珀酸银、新癸酸银、柠檬酸银和硬脂酸银中的一种或多种。
29.权利要求22至28任一项所述的烧结膏，其还包含脂肪酸和/或润湿剂，优选以下一种或多种：
短链或长链(C＝2至30)羧酸或二羧酸或羟基羧酸，更优选地月桂酸、硬脂酸、新癸酸、硬脂酸、油酸、草酸、丙二酸、琥珀酸、己二酸、马来酸、柠檬酸或乳酸；或
短链或长链(C＝2至30)胺，更优选地丁胺、己胺、辛胺、十二胺或十六胺；或
表面活性剂，更优选地triton X100、IGEPAL CA-630或月桂基葡糖苷。
30.权利要求22至29任一项所述的烧结膏，其还包含过氧化物，优选地过氧化氢或有机过氧化物。
31.权利要求22至30任一项所述的烧结膏，其中所述膏是基本上不含树脂的。
32.权利要求22至31任一项所述的烧结膏，其中所述膏是可印刷的和/或可分配的和/或可喷射的和/或可销转移的和/或呈现大于200W/mK的热导率和/或能够提供从25至45MPa的模片剪切强度。
33.权利要求22至32任一项所述的烧结膏，还包含成膜剂。
34.一种烧结膜，其包含权利要求1至19任一项所述的烧结粉末以及黏合剂。
35.一种模片固定方法，其包含：
(i)将权利要求34所述的烧结膜放置在模片和待接合的衬底之间；和
(ii)烧结所述烧结膜，
其中在没有施加压力的情况下进行所述烧结。
36.权利要求35所述的方法，其中在从150至400℃的温度下进行所述烧结持续至多120分钟。
37.权利要求35或36所述的方法，其中步骤(i)包含：
(a)将所述烧结膜施加至所述模片以形成具有模片侧和烧结膜侧的组件；和
(b)使所述组件的烧结膜侧与所述衬底接触。
38.权利要求37所述的方法，其中在从15至400℃的温度和从0.1至5MPa的压力下进行步骤(a)持续从0.1至60秒。
39.权利要求37或权利要求38所述的方法，其中在从15至400℃的温度和从0.1至40MPa的压力下进行步骤(b)持续从0.1至60秒。
40.一种模片固定方法，其包含：
(i)将权利要求34所述的烧结膜放置在模片和待接合的衬底之间；和
(ii)烧结所述烧结膜，
其中进行所述烧结同时施加从0.1至40MPa的压力。
41.一种晶片结合方法，其包含：
(i)将权利要求34所述的烧结膜放置在两个或更多待接合的晶片之间；和
(ii)烧结所述烧结膜，
其中在没有施加压力的情况下进行所述烧结。
42.一种转移烧结膜至部件的方法，其包含：
将权利要求34所述的烧结膜施加至衬底以形成具有烧结膜侧和衬底侧的组件；
使所述组件的烧结膜侧与部件接触；
将所述组件加热到从50至200℃的温度；
将从1至5MPa的压力施加至所述组件持续从0.1秒至60分钟；和
从所述烧结膜分离所述衬底。
43.权利要求1至19任一项所述的烧结粉末或权利要求22至33任一项所述的烧结膏或权利要求34所述的烧结膜在选自下列的方法中的用途：模片固定、晶片至晶片结合、反射层印刷、气密以及近气密密封、烧结在衬里层上的膜内形成的包含烧结粉末和黏合剂的膜、分配和生产互连线。
44.一种制造烧结接头的方法，其包含以下步骤：
在两个或更多个待接合的工件附近提供权利要求1至19任一项所述的烧结粉末或权利要求22至33任一项所述的烧结膏或权利要求34所述的烧结膜；和
加热所述烧结粉末或烧结膏或烧结膜以至少局部地烧结所述金属。
45.权利要求44所述的方法，其中在至少140℃、优选地从150至300℃的温度下进行所述加热。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823586A (zh) * 2021-01-20 2022-07-29 通用汽车环球科技运作有限责任公司 用于结合电力电子器件的重叠组件的接合材料

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201611198A (zh) * 2014-04-11 2016-03-16 阿爾發金屬公司 低壓燒結粉末
US10790426B2 (en) 2016-04-01 2020-09-29 Nichia Corporation Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member
US10644210B2 (en) * 2016-04-01 2020-05-05 Nichia Corporation Method of manufacturing light emitting element mounting base member, method of manufacturing light emitting device using the light emitting element mounting base member, light emitting element mounting base member, and light emitting device using the light emitting element mounting base member
JP6920029B2 (ja) * 2016-04-04 2021-08-18 日亜化学工業株式会社 金属粉焼結ペースト及びその製造方法、導電性材料の製造方法
JP7007140B2 (ja) * 2016-09-30 2022-01-24 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
JP2019065229A (ja) * 2017-10-04 2019-04-25 コニカミノルタ株式会社 混合液の製造方法、混合液を製造するシステム、インク組成物、画像形成方法および画像形成物
WO2019163568A1 (ja) * 2018-02-22 2019-08-29 リンテック株式会社 フィルム状焼成材料、及び支持シート付フィルム状焼成材料
WO2020002890A1 (en) 2018-06-26 2020-01-02 Alpha Assembly Solutions Inc. Nano copper paste and film for sintered die attach and similar applications
JP2020116611A (ja) * 2019-01-24 2020-08-06 株式会社弘輝 フラックス及びソルダペースト
JP7228422B2 (ja) * 2019-03-15 2023-02-24 日東電工株式会社 焼結接合用シート、基材付き焼結接合用シート、および焼結接合用材料層付き半導体チップ
US11628494B2 (en) 2019-03-29 2023-04-18 Xerox Corporation Surface additive for three-dimensional metal printing compositions
JP6831417B2 (ja) * 2019-03-29 2021-02-17 Ｄｏｗａエレクトロニクス株式会社 接合用金属ペースト及びそれを用いた接合方法
TWI815706B (zh) 2019-09-24 2023-09-11 美商阿爾發金屬化工公司 燒結組成物
JP7474122B2 (ja) 2020-06-12 2024-04-24 株式会社ダイセル 銀ナノ粒子及びその製造方法
EP4128326A2 (de) * 2020-06-23 2023-02-08 Siemens Aktiengesellschaft Verfahren zur kontaktierung eines leistungshalbleiters auf einem substrat sowie leistungshalbleitermodul mit einem leistungshalbleiter und einem substrat
CN111872370B (zh) * 2020-07-15 2022-04-26 深圳市惠拓电子材料有限公司 一种ntc热敏电阻材料超微粒径的制备方法
WO2023174581A1 (en) * 2022-03-15 2023-09-21 Alpha Assembly Solutions Inc. Sinter ready multilayer wire/ribbon bond pads and method for die top attachment
WO2023190593A1 (ja) * 2022-03-31 2023-10-05 パナソニックＩｐマネジメント株式会社 ペースト組成物及び複合体
EP4324578A1 (de) * 2022-08-17 2024-02-21 Heraeus Electronics GmbH & Co. KG Silbersinterpaste und deren verwendung zum verbinden von bauelementen

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1478285A (zh) * 2000-10-25 2004-02-25 ��ĥ������ʽ���� 导电金属膏
US20080032047A1 (en) * 2006-08-03 2008-02-07 Sachin Parashar Particles and inks and films using them
CN101803016A (zh) * 2007-07-19 2010-08-11 弗赖斯金属有限公司 附着方法和使用该方法生产的器件
KR20110003149A (ko) * 2009-07-03 2011-01-11 한화케미칼 주식회사 저온 소성 태양전지 전극용 페이스트 조성물 및 이를 이용한 집광형 구상 실리콘 태양전지
CN102395439A (zh) * 2009-04-17 2012-03-28 国立大学法人山形大学 包覆银超微粒子及其制造方法
CN102651248A (zh) * 2011-02-28 2012-08-29 三星电机株式会社 导电金属膏组合物及其制造方法，以及利用其的电子装置的电极和导电电路
CN103262172A (zh) * 2010-11-03 2013-08-21 弗赖斯金属有限公司 烧结材料及使用该材料的附着方法
CN104736483A (zh) * 2012-10-29 2015-06-24 阿尔法金属公司 烧结粉末

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4872663B2 (ja) * 2006-12-28 2012-02-08 株式会社日立製作所 接合用材料及び接合方法
DE102009040076A1 (de) * 2009-09-04 2011-03-10 W.C. Heraeus Gmbh Metallpaste mit Oxidationsmittel
JP5824201B2 (ja) 2009-09-11 2015-11-25 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
JP5544945B2 (ja) * 2010-03-11 2014-07-09 セイコーエプソン株式会社 造粒粉末および造粒粉末の製造方法
EP2442367B1 (en) * 2010-10-14 2014-07-16 Rohm and Haas Electronic Materials LLC Improved method for forming metal contacts
TW201611198A (zh) 2014-04-11 2016-03-16 阿爾發金屬公司 低壓燒結粉末

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1478285A (zh) * 2000-10-25 2004-02-25 ��ĥ������ʽ���� 导电金属膏
US20080032047A1 (en) * 2006-08-03 2008-02-07 Sachin Parashar Particles and inks and films using them
CN101803016A (zh) * 2007-07-19 2010-08-11 弗赖斯金属有限公司 附着方法和使用该方法生产的器件
CN102395439A (zh) * 2009-04-17 2012-03-28 国立大学法人山形大学 包覆银超微粒子及其制造方法
KR20110003149A (ko) * 2009-07-03 2011-01-11 한화케미칼 주식회사 저온 소성 태양전지 전극용 페이스트 조성물 및 이를 이용한 집광형 구상 실리콘 태양전지
CN103262172A (zh) * 2010-11-03 2013-08-21 弗赖斯金属有限公司 烧结材料及使用该材料的附着方法
CN102651248A (zh) * 2011-02-28 2012-08-29 三星电机株式会社 导电金属膏组合物及其制造方法，以及利用其的电子装置的电极和导电电路
CN104736483A (zh) * 2012-10-29 2015-06-24 阿尔法金属公司 烧结粉末

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114823586A (zh) * 2021-01-20 2022-07-29 通用汽车环球科技运作有限责任公司 用于结合电力电子器件的重叠组件的接合材料

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