WO2019163568A1 - フィルム状焼成材料、及び支持シート付フィルム状焼成材料 - Google Patents
フィルム状焼成材料、及び支持シート付フィルム状焼成材料 Download PDFInfo
- Publication number
- WO2019163568A1 WO2019163568A1 PCT/JP2019/004650 JP2019004650W WO2019163568A1 WO 2019163568 A1 WO2019163568 A1 WO 2019163568A1 JP 2019004650 W JP2019004650 W JP 2019004650W WO 2019163568 A1 WO2019163568 A1 WO 2019163568A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- fired material
- metal particles
- support sheet
- fired
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29324—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/2936—Iron [Fe] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29366—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29369—Platinum [Pt] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
Definitions
- the present invention relates to a film-like fired material and a film-like fired material with a support sheet.
- Patent Document 1 discloses paste-like metal fine particles in which specific heat-sinterable metal particles, a specific polymer dispersant, and a specific volatile dispersion medium are mixed. A composition is disclosed. When the composition is sintered, the solid metal is excellent in thermal conductivity.
- Patent Document 2 discloses that carbon containing 60 to 98% by mass of metal fine particles, having a tensile modulus of 10 to 3000 MPa, and obtained by energy dispersive X-ray analysis after heating up to 400 ° C. in an air atmosphere. A heat-bonding sheet having a concentration of 15% by mass or less is disclosed.
- JP 2014-111800 A Japanese Unexamined Patent Publication No. 2016-121329
- the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a film-like fired material that is excellent in thickness stability and thermal conductivity and exhibits excellent shear adhesion after firing. Moreover, it aims at providing the film-like baking material with a support sheet provided with the said film-like baking material.
- the present inventors have conducted intensive studies, and as a result, by using a combination of sinterable metal particles and non-sinterable metal particles, non-sinterable metal particles when the fired material is sintered. As a result, it has been found that the thermal conductivity is improved. However, it has been found that simply increasing the blending amount of non-sinterable metal particles to improve thermal conductivity decreases the shear adhesive strength after firing. The present inventors have found that the balance between thermal conductivity and shear adhesive force is excellent by prescribing the mass ratio of sinterable metal particles and non-sinterable metal particles to complete the present invention. It came.
- a film-like fired material containing first metal particles, second metal particles, and a binder component The average particle size of the first metal particles is 100 nm or less, and the maximum particle size is 250 nm or less, The average particle size of the second metal particles is 1000 to 7000 nm, the minimum particle size is more than 250 nm, and the maximum particle size is 10,000 nm or less, A film-like fired material having a mass ratio expressed by first metal particles / second metal particles of 0.1 or more.
- a film-like fired material with a support sheet comprising the film-like fired material according to [1] and a support sheet provided on at least one side of the film-like fired material.
- the support sheet is provided with a pressure-sensitive adhesive layer on a base film, The film-like fired material with a support sheet according to [2], wherein the film-like fired material is provided on the pressure-sensitive adhesive layer.
- a film-like fired material that is excellent in thickness stability and thermal conductivity and exhibits excellent shear adhesion after firing.
- a film-like fired material with a support sheet which is provided with the film-like fired material and is used for sintering bonding of chips such as semiconductor elements, can be provided.
- the film-like fired material of the present embodiment is a film-like fired material containing first metal particles, second metal particles, and a binder component, and the average particle diameter of the first metal particles is 100 nm or less, And the maximum particle size is 250 nm or less, the average particle size of the second metal particles is 1000 to 7000 nm, the minimum particle size is more than 250 nm, and the maximum particle size is 10000 nm or less. / The mass ratio represented by the second metal particles is 0.1 or more.
- the film-like fired material means a material before firing unless otherwise specified.
- FIG. 1 is a cross-sectional view schematically showing the film-like fired material of the present embodiment.
- the film-like fired material 1 contains first metal particles 10, second metal particles 20, and a binder component 30.
- the film-like fired material may be composed of one layer (single layer), or may be composed of two or more layers, for example, two or more layers and 10 layers or less.
- these layers may be the same as or different from each other, and the combination of these layers is not particularly limited as long as the effects of the present invention are not impaired.
- a plurality of layers may be the same or different from each other” means “all layers may be the same or all layers. May be different, and only some of the layers may be the same, ”and“ multiple layers are different from each other ”means“ the constituent materials of each layer, the blending ratio of the constituent materials, and the thickness. At least one of them is different from each other ”.
- the thickness of the film-like fired material before firing is not particularly limited, but is preferably 10 to 200 ⁇ m, preferably 20 to 150 ⁇ m, and more preferably 30 to 90 ⁇ m.
- the “thickness of the film-like fired material” means the thickness of the entire film-like fired material.
- the thickness of the film-like fired material consisting of a plurality of layers means all of the film-like fired material Means the total thickness of the layers.
- thickness can be obtained by using a constant pressure thickness measuring instrument in accordance with JIS K7130 as a value represented by an average of thicknesses measured at five arbitrary locations.
- a film-form baking material can be provided in the state laminated
- the release film may be peeled off and placed on the object to be sintered and bonded to the film-like fired material.
- the release film also has a function as a protective film for preventing damage to the film-like fired material and adhesion of dirt.
- the release film only needs to be provided on at least one side of the film-like fired material, and may be provided on both sides of the film-like fired material. When both are provided, one functions as a support sheet.
- release films include polyethylene film, polypropylene film, polybutene film, polybutadiene film, polymethylpentene film, polyvinyl chloride film, vinyl chloride copolymer film, polyethylene terephthalate film, polyethylene naphthalate film, polybutylene terephthalate film, and polyurethane.
- a transparent film such as a film is used.
- these laminated films may be sufficient.
- the film which colored these, an opaque film, etc. can be used.
- the release agent include release agents such as silicone-based, fluorine-based, olefin-based, alkyd-based, and long-chain alkyl group-containing carbamate.
- the thickness of the release film is usually about 10 to 500 ⁇ m, preferably about 15 to 300 ⁇ m, particularly preferably about 20 to 250 ⁇ m.
- the average particle diameter of the first metal particles is 100 nm or less.
- Metal particles having an average particle diameter of 100 nm or less exhibit sinterability. That is, the first metal particles are metal particles capable of forming a sintered body by melting and bonding particles by heat treatment at a temperature equal to or higher than the melting point of the metal particles as firing of the film-like fired material. By forming a sintered body, it is possible to sinter-bond the film-like fired material and the article fired in contact therewith. Specifically, it is possible to sinter and bond the chip and the substrate through a film-like fired material.
- the first metal particles are also referred to as “sinterable metal particles”.
- the average particle diameter of the first metal particles contained in the film-like fired material is preferably 0.1 to 100 nm, more preferably 0.5 to 80 nm, and further preferably 1 to 60 nm.
- the average particle diameter of the first metal particles is not more than the above upper limit value, the meltability is excellent and heat sintering at a low temperature is possible.
- the average particle diameter of the first metal particles is not less than the above lower limit value, the particles themselves can be handled easily, and scattering when blended with the binder component can be suppressed. Moreover, the dispersion state in the baking material composition mentioned later becomes more favorable.
- the maximum particle diameter of the 1st metal particle which a film-form baking material contains is 250 nm or less, 200 nm or less is preferable and 150 nm or less is more preferable. It is more excellent in solubility because the maximum particle diameter of the first metal particles is not more than the above upper limit value.
- the minimum particle diameter of the first metal particles contained in the film-like fired material is preferably 0.01 nm or more, more preferably 0.1 nm or more, and further preferably 1 nm or more. When the minimum particle diameter of the first metal particles is not less than the above lower limit value, the particles themselves can be handled more easily, and scattering during blending with the binder component can be further suppressed.
- the dispersion state in a calcination material composition becomes more favorable.
- the particle diameter of the first metal particles included in the film-like fired material is 0.01 nm to 250 nm, 0.01 nm to 200 nm, 0.01 nm to 150 nm, 0.1 nm to 250 nm, 0.1 nm to It may be 200 nm or less, 0.1 nm to 150 nm, 1 nm to 250 nm, 1 nm to 200 nm, 1 nm to 150 nm.
- the “particle diameter of the metal particles” is a projected area circle equivalent diameter of the particle diameter of the metal particles observed with a scanning electron microscope (SEM) or a transmission electron microscope (TEM). . Specifically, the particle diameter of the first metal particles is measured by TEM, and the particle diameter of the second metal particles is measured by SEM. Further, the “average particle diameter” means a particle diameter (D 50 ) at an integrated value of 50% in a particle size distribution curve obtained by an image analysis method using an SEM image or a TEM image unless otherwise specified. Means. “Minimum particle diameter” means the smallest particle diameter observed in the SEM image or TEM image, and “maximum particle diameter” means the largest particle diameter observed in the SEM image or TEM image. means.
- the metal species of the first metal particles include silver, gold, copper, iron, nickel, aluminum, silicon, palladium, platinum, titanium, barium titanate, oxides or alloys thereof, and silver and silver oxide. Is preferred.
- the 1st metal particle only 1 type may be mix
- silver particles and copper particles are preferable because they can exhibit excellent thermal conductivity even in a small amount and are advantageous in terms of cost.
- the surface of the first metal particles may be coated with an organic substance.
- an organic coating By having an organic coating, the compatibility with the binder component is improved, the particles can be prevented from agglomerating, and can be uniformly dispersed. In particular, it is excellent in dispersibility and coating film packing property (packing property) after sintering, it is difficult for cracks to occur in the film-like fired material, and it can maintain good thermal conductivity, so that the organic chain chemically bonded with metal alkoxide is the surface.
- Metal particles modified in the above are preferred. When the organic substance is coated on the surface of the first metal particle, the mass of the first metal particle is a value including the coating.
- a high boiling solvent such as isobornylcyclohexanol or decyl alcohol is used. It may be dispersed in advance.
- the boiling point of the high boiling point solvent may be 200 to 350 ° C., for example.
- the average particle diameter of the second metal particles is 1000 to 7000 nm.
- Metal particles having an average particle diameter of 1000 nm or more are non-sinterable metal particles that hardly exhibit sinterability. Therefore, even if the film-like fired material is fired, it remains in the sintered film-like fired material while maintaining its shape.
- the second metal particles are also referred to as “non-sinterable metal particles”.
- the average particle diameter of the second metal particles contained in the film-like fired material is 1000 to 7000 nm, preferably 1250 to 6000 nm, and more preferably 1500 to 5000 nm.
- the average particle diameter of the second metal particles is not more than the above upper limit value, the second metal particles are unlikely to settle or aggregate in the fired material composition described later.
- the particles are significantly aggregated, metal particles (aggregate) aggregated when the fired material composition is processed into a film-like fired material are visually recognized.
- irregularities are formed on the surface of the fired material due to the metal particles alone or aggregates, and the surface tends to be non-uniform.
- the shear adhesive force may be reduced due to uneven distribution of metal particles or aggregates at the bonding interface with the adherend (for example, a chip or a substrate). If the average particle diameter of the second metal particles is equal to or less than the above upper limit value, unevenness of the surface of the fired material due to the metal particles alone or aggregates can be suppressed. Further, the shear adhesive strength after firing is increased. On the other hand, when the average particle diameter of the second metal particles is not less than the above lower limit value, the thermal conductivity is excellent.
- the minimum particle diameter of the 2nd metal particle which a film-form baking material contains is more than 250 nm, 350 nm or more is preferable and 450 nm or more is more preferable.
- the minimum particle diameter of the second metal particles is equal to or greater than the lower limit, the non-melting property is superior, and even when the film-like fired material is fired, the shape is maintained in the sintered film-like fired material. It tends to remain.
- the maximum particle diameter of the 2nd metal particle which a film-form baking material contains is 10000 nm or less, 9000 nm or less is preferable and 8000 nm or less is more preferable.
- the maximum particle size of the second metal particles is not more than the above upper limit value, it becomes more difficult to settle in the fired material composition, and when the fired material composition is processed into a film-like fired material, the metal particles alone or aggregated The unevenness of the surface of the fired material due to the product can be further suppressed.
- the particle diameter of the second metal particles contained in the film-like fired material is more than 250 nm and less than or equal to 10,000 nm, more than 250 nm and less than or equal to 9000 nm, more than 250 nm and less than or equal to 8000 nm, between 350 nm and 10,000 nm, 350 nm and 9000 nm, 350 nm and 8000 nm, and 450 nm and more It may be 10,000 nm or less, 450 nm or more and 9000 nm or less, or 450 nm or more and 8000 nm or less.
- Examples of the metal species of the second metal particles include the same as those exemplified as the metal species of the first metal particles, and can exhibit excellent thermal conductivity even in a small amount, which is advantageous in terms of cost. Particles and copper particles are preferred.
- the surface of the second metal particle may be coated with an organic substance.
- an organic coating By having an organic coating, the compatibility with the binder component is improved, the particles can be prevented from agglomerating, and can be uniformly dispersed. In particular, it is excellent in dispersibility and coating film packing property (packing property) after sintering, it is difficult for cracks to occur in the film-like fired material, and it can maintain good thermal conductivity, so that the organic chain chemically bonded with metal alkoxide is the surface.
- Metal particles modified in the above are preferred. When the organic material is coated on the surface of the second metal particle, the mass of the first metal particle is a value including the coating.
- the second metal particles Before the second metal particles are mixed with the binder component and other additive components described later, in order to make the aggregate free from agglomerates, the second metal particles can be used as a high boiling point solvent such as isobornylcyclohexanol or decyl alcohol. It may be dispersed in advance.
- the boiling point of the high boiling point solvent may be 200 to 350 ° C., for example.
- the concentration of the second metal particles is prevented from being increased, and workability is improved. Reagglomeration and the like are also prevented, and the quality may be improved.
- Examples of the dispersion method include kneader, three rolls, bead mill, and ultrasonic waves.
- the fired material can be formed into a film shape, and tackiness can be imparted to the film-like fired material before firing.
- the binder component may be thermally decomposable that is thermally decomposed by heat treatment as firing of the film-like fired material.
- a binder component is not specifically limited, Resin is mentioned as a suitable example of a binder component.
- the resin include acrylic resins, polycarbonate resins, polylactic acid, and polymerized cellulose derivatives, and acrylic resins are preferred.
- Acrylic resins include homopolymers of (meth) acrylate compounds, copolymers of two or more (meth) acrylate compounds, and copolymers of (meth) acrylate compounds and other copolymerizable monomers. included.
- the content of the structural unit derived from the (meth) acrylate compound is preferably 50 to 100% by mass with respect to the total mass (100% by mass) of the structural unit, preferably 80 to 100%. More preferably, it is more preferably 90 to 100% by mass.
- “derived” means that the monomer has undergone a structural change necessary for polymerization.
- the (meth) acrylate compound examples include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, and t-butyl.
- (Meth) acrylate pentyl (meth) acrylate, amyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, isooctyl (meth) acrylate, 2-ethylhexyl (Meth) acrylate, ethylhexyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate, undecyl (meth) acrylate, Decyl (meth) acrylate, alkyl (meth) acrylates such as lauryl (meth) acrylate, stearyl (meth) acrylate, isostearyl (meth) acrylate; Hydroxyethyl (meth) acrylate,
- Alkyl (meth) acrylate or alkoxyalkyl (meth) acrylate is preferred, and particularly preferred (meth) acrylate compounds include butyl (meth) acrylate, ethylhexyl (meth) acrylate, lauryl (meth) acrylate, isodecyl (meth) acrylate, 2- Mention may be made of ethylhexyl (meth) acrylate and 2-ethoxyethyl (meth) acrylate.
- (meth) acrylate is a concept including both “acrylate” and “methacrylate”.
- acrylic resin methacrylate is preferable.
- the binder component contains a structural unit derived from methacrylate, it can be fired at a relatively low temperature, and conditions for obtaining sufficient adhesive strength after sintering can be easily satisfied.
- the content of the structural unit derived from methacrylate is preferably 50 to 100% by mass, and 80 to 100% by mass with respect to the total mass (100% by mass) of the structural unit. More preferably, the content is 90 to 100% by mass.
- the other copolymerizable monomer is not particularly limited as long as it is a compound copolymerizable with the above (meth) acrylate compound.
- Unsaturated carboxylic acids; vinyl group-containing radical polymerizable compounds such as vinyl benzyl methyl ether, vinyl glycidyl ether, styrene, ⁇ -methyl styrene, butadiene, and isoprene.
- the resin constituting the binder component has a mass average molecular weight (Mw) of preferably 1,000 to 1,000,000, and more preferably 10,000 to 800,000. When the mass average molecular weight of the resin is within the above range, it becomes easy to exhibit sufficient film strength as a film and to impart flexibility.
- Mw mass average molecular weight
- “mass average molecular weight” is a polystyrene equivalent value measured by gel permeation chromatography (GPC) method unless otherwise specified.
- the glass transition temperature (Tg) of the resin constituting the binder component is preferably ⁇ 60 to 50 ° C., more preferably ⁇ 30 to 10 ° C., and further preferably ⁇ 20 ° C. or more and less than 0 ° C. preferable.
- Adhesive strength before baking with a film-form baking material and a to-be-adhered body improves because Tg of resin is below the said upper limit.
- the flexibility of the film-like fired material is increased.
- the “glass transition temperature (Tg)” is represented by the temperature of the inflection point of the DSC curve obtained by measuring the DSC curve of the sample using a differential scanning calorimeter.
- the binder component may be thermally decomposable that is thermally decomposed by heat treatment as firing of the film-like fired material.
- the thermal decomposition of the binder component can be confirmed by a decrease in the mass of the binder component due to firing.
- blended as a binder component may be substantially thermally decomposed by baking, the total mass of the component mix
- the binder component may have a mass after firing of 10% by mass or less, or 5% by mass or less, based on the total mass (100% by mass) of the binder component before firing. It may be less than or equal to 0% by mass, or 0% by mass.
- the film-like fired material of the present embodiment includes the first metal particles, the second metal particles, and the second metal particles as long as the effects of the present invention are not impaired.
- the metal particle and other additives not corresponding to the binder component may be contained.
- additives that may be contained in the film-like fired material of this embodiment include a solvent, a dispersant, a plasticizer, a tackifier, a storage stabilizer, an antifoaming agent, a thermal decomposition accelerator, and an antioxidant. Etc. Only 1 type may be contained and 2 or more types of additives may be contained. These additives are not particularly limited, and those commonly used in this field can be appropriately selected.
- the film-like fired material of the present embodiment may be composed of first metal particles, second metal particles, a binder component, and other additives, and the sum of these contents (mass%) is 100% by mass.
- the mass ratio represented by the first metal particles / second metal particles is 0.1 or more, preferably 0.2 or more. 0.4 or more is more preferable. If the ratio of the first metal particles is too small, voids are likely to occur in the fired film-like fired material, which causes a decrease in thermal conductivity and shear adhesive strength. When the first metal particle / second metal particle is equal to or more than the lower limit, the content of the first metal particle can be sufficiently ensured. Accordingly, a film-like fired material that does not easily generate voids even when fired is obtained, and thermal conductivity and shear adhesive strength are increased.
- the first metal particle / second metal particle is preferably 100 or less, more preferably 50 or less, and even more preferably 25 or less.
- the first metal particles / second metal particles are 0.1 to 100, 0.1 to 50, 0.1 to 25, 0.2 to 100, 0.2 to 50, 0 It may be from 2 to 25, from 0.4 to 100, from 0.4 to 50, and from 0.4 to 25.
- the total content of the first metal particles and the second metal particles with respect to the total mass (100% by mass) of all components (hereinafter referred to as “solid content”) other than the solvent in the film-like fired material is 50 ⁇ 99 mass% is preferred, 70 ⁇ 97 mass% is more preferred, and 80 ⁇ 95 mass% is still more preferred.
- the content of the binder component relative to the total mass (100% by mass) of the solid content in the film-like fired material is preferably 1 to 50% by mass, more preferably 3 to 30% by mass, and even more preferably 5 to 20% by mass. Since the content of the binder component is not more than the above upper limit value, the content of the first metal particles and the second metal particles can be sufficiently ensured, so that the adhesive force between the film-like fired material and the adherend is improved. To do. On the other hand, a film shape can be maintained because content of a binder component is more than the said lower limit.
- the film-like fired material may contain the above-described high boiling point solvent used when mixing the first metal particles, the second metal particles, the binder component, and other additive components.
- the content of the high boiling point solvent with respect to the total mass (100% by mass) of the film-like fired material is preferably 20% by mass or less, more preferably 15% by mass or less, and further preferably 10% by mass or less.
- the film-like fired material of the present embodiment is excellent in thickness stability.
- the film-like fired material of the present embodiment includes the first metal particles that are sinterable metal particles and the second metal particles that are non-sinterable metal particles in a specific mass ratio, In the film-like fired material, voids are unlikely to occur, and the thermal conductivity and shear adhesive strength are excellent.
- the average particle diameter of the 2nd metal particle contained in the film-form baking material of this embodiment is more than 100 nm and 10000 nm or less, the 2nd metal particle cannot aggregate easily and can disperse
- thermo conductivity of 300 W / (m ⁇ K) or more is easily developed.
- the measuring methods of thermal conductivity and shear adhesive strength are as described in the examples described later.
- the film-like fired material can be a film-like fired material with a support sheet in which a support sheet is provided on at least one side (surface). Details of the film-like fired material with a support sheet will be described later.
- the film-like fired material can be formed using a fired material composition containing the constituent materials.
- a fired material composition containing the constituent materials.
- a film-like fired material can be formed at the site. Examples of the surface on which the film-like fired material is formed include the surface of a release film.
- the solvent preferably has a boiling point of less than 200 ° C., for example, n-hexane (boiling point: 68 ° C.), ethyl acetate (boiling point: 77 ° C.), 2-butanone (boiling point: 80 ° C), n-heptane (boiling point: 98 ° C), methylcyclohexane (boiling point: 101 ° C), toluene (boiling point: 111 ° C), acetylacetone (boiling point: 138 ° C), n-xylene (boiling point: 139 ° C) and dimethylformamide (Boiling point: 153 ° C.). These may be used alone or in combination.
- the baking material composition may be applied by a known method, for example, an air knife coater, blade coater, bar coater, gravure coater, comma coater (registered trademark), roll coater, roll knife coater, curtain coater, die coater. And a method using various coaters such as a knife coater, a screen coater, a Meyer bar coater, and a kiss coater.
- a known method for example, an air knife coater, blade coater, bar coater, gravure coater, comma coater (registered trademark), roll coater, roll knife coater, curtain coater, die coater.
- various coaters such as a knife coater, a screen coater, a Meyer bar coater, and a kiss coater.
- any solvent can be used as long as it can be evaporated and dried after printing, and the boiling point is preferably 65 to 350 ° C.
- a solvent include those exemplified above, those having a boiling point of less than 200 ° C., isophorone (boiling point: 215 ° C.), butyl carbitol (boiling point: 230 ° C.), 1-decanol (boiling point: 233 ° C.), butyl carbyl.
- Examples include tall acetate (boiling point: 247 ° C.) and isobornylcyclohexanol (boiling point: 318 ° C.).
- the solvent When the boiling point exceeds 350 ° C., the solvent is less likely to volatilize by volatile drying after printing, and it becomes difficult to ensure the desired shape, or the solvent remains in the film during firing, and bonding adhesiveness May deteriorate. If the boiling point is lower than 65 ° C., it volatilizes during printing, and the thickness stability may be impaired. If a solvent having a boiling point of 200 to 350 ° C. is used, an increase in viscosity due to volatilization of the solvent during printing can be suppressed, and printability can be obtained.
- the firing material composition can be printed by a known printing method, such as relief printing such as flexographic printing, intaglio printing such as gravure printing, flat printing such as offset printing, silk screen printing, rotary screen printing, etc. Examples thereof include screen printing and printing by various printers such as an ink jet printer.
- the circle is a shape corresponding to the shape of the semiconductor wafer.
- the rectangle is a shape corresponding to the shape of the chip.
- the corresponding shape may be the same shape or substantially the same shape as the target shape of the sintered joint.
- the area of the circle may be 3.5 to 1,600 cm 2 and may be 85 to 1,400 cm 2 .
- the area of the rectangle may be 0.01 to 25 cm 2 and may be 0.25 to 9 cm 2 .
- the film-like fired material is preferably produced by printing using the fired material composition, and more preferably produced by screen printing.
- the drying conditions of the fired material composition are not particularly limited, but when the fired material composition contains a solvent, it is preferably heated and dried. In this case, for example, 70 to 250 ° C., for example, 80 to 180 ° C., Drying is preferably performed under conditions of 10 seconds to 10 minutes.
- the film-like fired material of this embodiment is a film-like fired material containing first metal particles, second metal particles, and a binder component, and the average particle diameter of the first metal particles is 100 nm or less.
- the maximum particle size is 250 nm or less
- the average particle size of the second metal particles is 1000 to 7000 nm
- the minimum particle size is more than 250 nm
- the maximum particle size is 10000 nm or less.
- the film-like fired material has a mass ratio represented by metal particles / second metal particles of 0.1 or more, the average particle diameter of the first metal particles is 0.5 to 80 nm, and the maximum The particle diameter is 250 nm or less, the minimum particle diameter is 0.5 nm or more, the average particle diameter of the second metal particles is 1500 to 5000 nm, and the maximum particle diameter is 10,000 nm or less. And is the minimum particle diameter of 450nm or more, the weight ratio represented by the first metal particles / second metal particles is 0.2 to 25, the film-like fired material is preferred.
- the total content of the first metal particles and the second metal particles is 80 to 95% by weight with respect to the total mass (100% by weight) of the solid content in the film-like fired material.
- a film-like fired material having a binder component content of 5 to 20% by mass is preferred.
- the film-like fired material with a support sheet of the present embodiment includes the above-mentioned film-like fired material and a support sheet provided on at least one side (surface) of the film-like fired material.
- the support sheet is provided with a pressure-sensitive adhesive layer on the entire surface or on the outer periphery of the base film, and the film-like fired material is preferably provided on the pressure-sensitive adhesive layer.
- the film-like fired material may be provided in direct contact with the pressure-sensitive adhesive layer, or may be provided in direct contact with the base film. By taking this form, it can be used as a dicing sheet used when a semiconductor wafer is divided into chips. Moreover, it can be processed into a film-like fired material having the same shape as the chip by separating into pieces together with a semiconductor wafer using a blade or the like, and a chip with a film-like fired material can be produced.
- FIG.2 and FIG.3 the schematic sectional drawing of the film-form baking material with a support sheet of this embodiment is shown.
- the film-like fired material 100a, 100b with a support sheet of this embodiment can peel the film-like fired material 1 on the inner peripheral part of the support sheet 2 having an adhesive part on the outer peripheral part. It is temporarily attached to.
- the support sheet 2 is a pressure-sensitive adhesive sheet having a pressure-sensitive adhesive layer 4 on the upper surface of the base film 3, and the inner peripheral surface of the pressure-sensitive adhesive layer 4 is covered with a film-like baking material. The adhesive portion is exposed on the outer peripheral portion.
- the support sheet 2 may have a configuration having a ring-shaped pressure-sensitive adhesive layer 4 on the outer peripheral portion of the base film 3.
- the film-like fired material 1 is formed on the inner peripheral part of the support sheet 2 in substantially the same shape as the work (semiconductor wafer or the like) to be stuck.
- the support sheet 2 has an adhesive portion on the outer peripheral portion.
- the film-like fired material 1 having a smaller diameter than the support sheet 2 is concentrically laminated on the circular support sheet 2.
- the adhesive portion on the outer peripheral portion is used for fixing the ring frame 5 as illustrated.
- the base film 3 is not particularly limited.
- low density polyethylene LDPE
- linear low density polyethylene LLDPE
- ethylene / propylene copolymer polypropylene, polybutene, polybutadiene, polymethylpentene, ethylene / vinyl acetate.
- Copolymer ethylene / (meth) acrylic acid copolymer, ethylene / (meth) methyl acrylate copolymer, ethylene / (meth) ethyl acrylate copolymer, polyvinyl chloride, vinyl chloride / vinyl acetate copolymer
- a film made of coalescence, polyurethane film, ionomer or the like is used.
- the base film 3 includes polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polymethylpentene. Can be mentioned. In addition, these cross-linked films and modified films by radiation and discharge can also be used.
- the base film may be a laminate of the above films.
- these films can be used by laminating or combining two or more kinds. Furthermore, the thing which colored these films, or what gave printing etc. can be used.
- the film may be a sheet obtained by extrusion forming a thermoplastic resin, or may be a stretched film. A film obtained by thinning and curing a curable resin by a predetermined means is used. It may be broken.
- the thickness of the base film is not particularly limited, and is preferably 30 to 300 ⁇ m, more preferably 50 to 200 ⁇ m. By making the thickness of the base film within the above range, the base film is hardly broken even if cutting is performed by dicing. In addition, since sufficient flexibility is imparted to the film-like fired material with a support sheet, good sticking property to a workpiece (for example, a semiconductor wafer) is exhibited.
- the base film can also be obtained by applying a release agent on the surface and performing a release treatment.
- a release agent used for the release treatment, alkyd, silicone, fluorine, unsaturated polyester, polyolefin, wax, and the like are used.
- alkyd, silicone, and fluorine release agents are heat resistant. This is preferable.
- the release agent can be used without a solvent, or can be diluted or emulsified with a solvent, and a gravure coater, Mayer bar coater, air knife coater, roll coater, etc.
- the substrate film on which the release agent is applied is applied at room temperature or under heating, or is cured by electron beam, wet lamination, dry lamination, hot melt lamination, melt extrusion lamination, coextrusion processing, etc. Or a laminated body may be formed.
- the support sheet 2 has an adhesive portion at least on the outer periphery thereof.
- the adhesive portion has a function of temporarily fixing the ring frame 5 on the outer peripheral portions of the film-like fired materials 100a and 100b with a support sheet, and it is preferable that the ring frame 5 can be peeled off after a required process.
- the pressure-sensitive adhesive layer 4 may be weakly adhesive, or may be energy-ray curable, whose adhesive strength is reduced by irradiation with energy rays.
- the re-peelable pressure-sensitive adhesive layer is made of various known pressure-sensitive adhesives (for example, general-purpose pressure-sensitive adhesives such as rubber-based, acrylic-based, silicone-based, urethane-based, and polyvinyl ether-based adhesives, pressure-sensitive adhesives, and energy ray-curable pressure-sensitive adhesives. Agent, thermal expansion component-containing pressure-sensitive adhesive, etc.).
- general-purpose pressure-sensitive adhesives such as rubber-based, acrylic-based, silicone-based, urethane-based, and polyvinyl ether-based adhesives
- pressure-sensitive adhesives for example, general-purpose pressure-sensitive adhesives such as rubber-based, acrylic-based, silicone-based, urethane-based, and polyvinyl ether-based adhesives, pressure-sensitive adhesives, and energy ray-curable pressure-sensitive adhesives. Agent, thermal expansion component-containing pressure-sensitive adhesive, etc.).
- the support sheet 2 is a pressure-sensitive adhesive sheet having a normal structure having a pressure-sensitive adhesive layer 4 on the entire upper surface of the base film 3, and the inner peripheral surface of the pressure-sensitive adhesive layer 4 is a film-like fired film.
- the configuration may be such that the adhesive portion is exposed on the outer peripheral portion while being covered with the material.
- the outer peripheral portion of the pressure-sensitive adhesive layer 4 is used for fixing the ring frame 5 described above, and a film-like fired material is laminated on the inner peripheral portion in a peelable manner.
- a weakly-adhesive layer may be used as described above, or an energy ray-curable pressure-sensitive adhesive may be used.
- the ring-shaped adhesive layer 4 is formed in the outer peripheral part of the base film 3, and it is set as an adhesion part.
- the pressure-sensitive adhesive layer 4 may be a single-layer pressure-sensitive adhesive layer made of the above-mentioned pressure-sensitive adhesive, or may be one obtained by circularly cutting a double-sided pressure-sensitive adhesive tape including a pressure-sensitive adhesive layer made of the above-mentioned pressure-sensitive adhesive.
- the weak adhesive acrylic and silicone are preferably used.
- the adhesive strength of the adhesive layer 4 to the SUS plate at 23 ° C. is preferably 30 to 120 mN / 25 mm, and preferably 50 to 100 mN / 25 mm. Is more preferable, and 60 to 90 mN / 25 mm is more preferable. If this adhesive strength is too low, the ring frame may fall off. If the adhesive strength is too high, peeling from the ring frame becomes difficult, and it becomes difficult to reuse the ring frame.
- the region where the film-like fired material is laminated is irradiated with energy rays in advance to reduce the adhesiveness. Good.
- the other regions may not be irradiated with energy rays, and may be maintained with a high adhesive force for the purpose of adhesion to the ring frame 5, for example.
- an energy ray shielding layer is provided by printing or the like in areas corresponding to other areas of the base film, and energy rays are irradiated from the base film side. Just do it.
- the surface in which the adhesive layer 4 of the base film 3 is provided may be sandblasting or as needed.
- Irregularizing treatment such as solvent treatment, or corona discharge treatment, electron beam irradiation, plasma treatment, ozone / ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, or other oxidation treatment can be performed.
- primer treatment can also be performed.
- the thickness of the pressure-sensitive adhesive layer 4 is not particularly limited, but is preferably 1 to 100 ⁇ m, more preferably 2 to 80 ⁇ m, and particularly preferably 3 to 50 ⁇ m.
- the film-like fired material with a support sheet is formed by temporarily attaching the film-like fired material to the inner periphery of a support sheet having an adhesive part on the outer periphery.
- the film-like fired material 100 a with a support sheet is laminated such that the film-like fired material 1 can be peeled on the inner peripheral portion of the support sheet 2 composed of the base film 3 and the pressure-sensitive adhesive layer 4.
- the pressure-sensitive adhesive layer 4 is exposed on the outer periphery of the support sheet 2.
- it is preferable that the film-like fired material 1 having a smaller diameter than the support sheet 2 is laminated on the pressure-sensitive adhesive layer 4 of the support sheet 2 so as to be peeled in a concentric manner.
- the film-shaped baking material 100a with a support sheet having the above-described configuration is attached to the ring frame 5 in the pressure-sensitive adhesive layer 4 exposed on the outer periphery of the support sheet 2.
- an annular double-sided tape or an adhesive layer may be separately provided on the margin for the ring frame (exposed adhesive layer on the outer periphery of the adhesive sheet).
- the double-sided tape has a configuration of a pressure-sensitive adhesive layer / core material / pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer in the double-sided tape is not particularly limited. .
- the adhesive layer is affixed to the ring frame at the outer periphery when a chip-attached substrate described later is manufactured.
- the core material of the double-sided tape for example, a polyester film, a polypropylene film, a polycarbonate film, a polyimide film, a fluororesin film, a liquid crystal polymer film and the like are preferably used.
- FIG. 4 shows a perspective view of the film-like fired material 100b with a support sheet shown in FIG.
- the pressure-sensitive adhesive layer 4 may be a single-layer pressure-sensitive adhesive layer made of the above-mentioned pressure-sensitive adhesive, or may be one obtained by circularly cutting a double-sided pressure-sensitive adhesive tape including a pressure-sensitive adhesive layer made of the above-mentioned pressure-sensitive adhesive.
- the film-like fired material 1 is detachably laminated on the inner peripheral part of the base film 3 surrounded by the adhesive part. In this configuration example, it is preferable that the film-shaped fired material 1 having a smaller diameter than the support sheet 2 is laminated on the base film 3 of the support sheet 2 so as to be concentrically peelable.
- the film-like fired material with a support sheet is a release film for the purpose of surface protection to avoid contact with the outside on the surface of either or both of the film-like fired material and the adhesive part until it is used. May be provided.
- a surface protective film As a surface protective film (release film), it is obtained by performing the above-described release treatment using a release agent on the surface of a base film such as polyethylene, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate and polypropylene mentioned above. You can also.
- a release agent used for the release treatment include the release agents exemplified above in the description of the base film.
- the thickness of the film-like fired material with a support sheet is preferably 1 to 500 ⁇ m, more preferably 5 to 300 ⁇ m, and even more preferably 10 to 150 ⁇ m.
- the “thickness of the film-like fired material with support sheet” means the thickness of the entire film-like fired material with support sheet, for example, the thickness of the film-like fired material with support sheet consisting of a plurality of layers. , Means the thickness of all the layers constituting the film-like fired material with a support sheet.
- the film-like fired material with a support sheet can be produced by sequentially laminating the above-described layers so as to have a corresponding positional relationship. For example, when laminating a pressure-sensitive adhesive layer or a film-like fired material on a base film, a pressure-sensitive adhesive composition or a fired material composition containing a component and a solvent for constituting the film is applied onto the release film.
- the adhesive layer or the film-like fired material is formed in advance on the release film by performing the process or printing, drying as necessary and volatilizing the solvent to form a film, and this formed adhesive layer or What is necessary is just to bond the exposed surface on the opposite side to the side which is contacting the said peeling film of a film-form baking material with the surface of a base film.
- the release film may be removed as necessary after forming the laminated structure.
- the content of each component for constituting this may be 50 to 99% by mass in total of each component, and the content of the solvent may be 1 to 50% by mass.
- a film-like fired material with a support sheet in which a pressure-sensitive adhesive layer is laminated on a base film, and a film-like fired material is laminated on the pressure-sensitive adhesive layer (the support sheet is a laminate of the base film and the pressure-sensitive adhesive layer)
- the pressure-sensitive adhesive layer is laminated on the base film by the above-described method, and the film-like fired material is separately formed on the release film.
- a film-like baking material is formed on the release film,
- the film-like fired material with a support sheet is laminated by laminating the exposed surface of the film-like fired material with the exposed surface of the pressure-sensitive adhesive layer already laminated on the substrate, and laminating the film-like fired material on the pressure-sensitive adhesive layer. Obtained.
- the fired material composition is preferably applied or printed on the release-treated surface of the release film, and the release film is formed as necessary after the formation of the laminated structure. Remove it.
- all layers other than the base material constituting the film-like fired material with a support sheet can be laminated by a method in which the layers are formed in advance on the release film and bonded to the surface of the target layer. Accordingly, a layer employing such a process may be appropriately selected to produce a film-like fired material with a support sheet.
- the film-like fired material with a support sheet may be stored in a state in which a release film is bonded to the surface of the outermost layer opposite to the support sheet.
- a manufacturing method of a substrate with a chip using a film-like fired material with a support sheet peels the release film of the film-like fired material with a support sheet, and supports it on the back surface of the semiconductor wafer (work).
- a film-like fired material with a sheet is attached, and the following steps (1) to (2) may be carried out in the order of (1) and (2), and the following steps (1) to (4) You may carry out in order of 1), (2), (3), (4).
- Step (1) a step of dicing the semiconductor wafer (work) and the film-like fired material of the laminate in which the support sheet, the film-like fired material, and the semiconductor wafer (work) are laminated in this order
- Step (2) A step of peeling the film-like fired material and the support sheet to obtain a chip with the film-like fired material
- Step (3) A step of attaching a chip with a film-like fired material to the surface of the substrate
- the semiconductor wafer may be a silicon wafer and a silicon carbide wafer, or may be a compound semiconductor wafer such as gallium / arsenic.
- a circuit may be formed on the surface of the semiconductor wafer. Formation of a circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method.
- the opposite surface (back surface) of the circuit surface of the semiconductor wafer is ground.
- the grinding method is not particularly limited, and grinding may be performed by a known means using a grinder or the like. At the time of back surface grinding, an adhesive sheet called a surface protection sheet is attached to the circuit surface in order to protect the circuit on the surface.
- the circuit surface side (that is, the surface protection sheet side) of the wafer is fixed by a chuck table or the like, and the back surface side on which no circuit is formed is ground by a grinder.
- the thickness of the wafer after grinding is not particularly limited, but is usually about 20 to 500 ⁇ m.
- the crushed layer generated during back grinding is removed.
- the crushed layer is removed by chemical etching, plasma etching, or the like.
- steps (1) to (4) are performed in the order of (1), (2), (3), and (4).
- the laminate of the semiconductor wafer / film-like fired material / support sheet is diced for each circuit formed on the wafer surface to obtain a chip / film-like fired material / support sheet laminate. Dicing is performed so as to cut both the semiconductor wafer and the film-like fired material. According to the film-like fired material with a support sheet of this embodiment, since the adhesive force is exhibited between the film-like fired material and the support sheet during dicing, chipping and chip jumping can be prevented, and dicing suitability can be achieved. Excellent. Dicing is not particularly limited.
- the peripheral portion of the support sheet (the outer peripheral portion of the support) is fixed with a ring frame, and then a known method such as using a rotating round blade such as a dicing blade is used. And the like, and the like.
- the cutting depth into the support sheet by dicing may be obtained by completely cutting the film-like fired material, and is preferably 0 to 30 ⁇ m from the interface between the film-like fired material and the support sheet. By reducing the amount of cut into the support sheet, melting of the pressure-sensitive adhesive layer and the base film constituting the support sheet due to friction of the dicing blade, generation of burrs, and the like can be suppressed.
- a semiconductor wafer having a circuit formed on its surface (chip) is particularly referred to as an element or a semiconductor element.
- the support sheet may be expanded.
- the support sheet has excellent expandability.
- the film-like fired material and the support sheet are peeled off by picking up the diced chip with the film-like fired material by a general-purpose means such as a collet. As a result, a chip having a film-like fired material on the back surface (chip with a film-like fired material) is obtained.
- a film-like chip with a fired material is attached to the surface of the substrate.
- the substrate includes a lead frame and a heat sink.
- the film-like fired material is fired to sinter-bond the substrate and the chip.
- the exposed surface of the film-like fired material of the chip with film-like fired material is attached to the substrate, the chip and the substrate can be sintered and bonded via the film-like fired material.
- the heating temperature for firing the film-like fired material may be appropriately determined in consideration of the type of the film-like fired material, etc., but is preferably 100 to 600 ° C, more preferably 150 to 550 ° C, and further preferably 250 to 500 ° C. preferable.
- the heating time may be appropriately determined in consideration of the type of film-like fired material and the like, but is preferably 1 to 60 minutes, more preferably 1 to 30 minutes, and further preferably 1 to 10 minutes.
- the firing of the film-like fired material may be performed by pressure firing in which the film-like fired material is fired under pressure.
- the pressurizing condition may be about 1 to 50 MPa.
- a film-like fired material having a high uniformity in thickness can be easily formed on the back surface of the chip, and cracks after the dicing process and packaging are less likely to occur.
- the chip with the film-like fired material can be obtained without individually attaching the film-like fired material to the individual chip back surface. Simplification can be achieved.
- substrate were sinter-bonded via a film-like baking material can be manufactured by arrange
- a chip with a film-like fired material comprising a chip and the film-like fired material of the present invention is obtained.
- the chip with a film-like fired material can be manufactured by the above-described method for manufacturing a substrate with a chip.
- the film-like fired material chip and its substrate are exemplified by the sintered joining, but the film-like fired material sintered joining object is not limited to those exemplified above, and the film-like fired material is fired. Sinter bonding is possible for various articles that are sintered in contact with the material.
- the said embodiment can process as a film-like baking material of the same shape as a chip
- it can. That is, in the chip with the film-like fired material, the contact surface of the film-like fired material and the size (area) of the contact surface of the chip are the same, but they may be different.
- the substrate and the chip may be bonded via the film-like baking material in a state where the contact surface of the film-like baking material is larger than the contact surface of the chip.
- a film-shaped fired material having a desired size may be arranged on the substrate, and a chip having a contact surface smaller than that of the film-shaped fired material may be attached on the film-shaped fired material.
- the first metal particles and the second metal particles were mixed so that the mass ratio represented by the first metal particles / second metal particles would be the value shown in Table 1.
- the particle diameter of the first metal particles was measured with TEM, and the particle diameter of the second metal particles was measured with SEM.
- ⁇ Manufacture of film-like fired material> The fired material composition obtained above was applied to one side of a release film (thickness 38 ⁇ m, SP-PET 381031, manufactured by Lintec Corporation), which is a polyethylene terephthalate-based film subjected to release treatment on one side, and 110 ° C. for 10 minutes. By drying, a film-like fired material having a thickness of 75 ⁇ m was obtained.
- the thermal conductivity after firing of the film-like fired material was measured by the following method.
- a plurality of the film-like fired materials obtained above were cut into 10 mm ⁇ 10 mm and laminated so that the thickness after firing was around 150 ⁇ m to obtain a laminate (1).
- An aluminum sheet having a thickness of 100 ⁇ m and an area of 20 mm ⁇ 20 mm was attached to both surfaces of the obtained laminate (1) to obtain a laminate (2).
- the obtained laminate (2) is sandwiched between a cylindrical copper piece of 5 mm height having a cross section of 10 mm in diameter and a cylindrical copper piece of 2 mm height having a cross section of 5 mm in diameter, under a nitrogen atmosphere.
- the thickness after lamination of the film-like fired material before firing is roughly determined by the volume ratio of the metal particles in the film-like fired material, and a value obtained by dividing 150 ⁇ m by the volume ratio of the metal particles in the film-like fired material. This is a measure of the thickness after lamination of the film-like fired material before firing.
- the thermal diffusivity of the test piece is measured using a thermal conductivity measuring device (product name “I Phase Mobile 1u” manufactured by Eye Phase Co., Ltd.), and then the heat of the test piece is determined from the specific heat and specific gravity of the test piece.
- the shear adhesive strength after firing of the film-like fired material was measured by the following method.
- the film-like fired material obtained above was cut into 10 mm ⁇ 10 mm, and this was pasted on the top surface of a cylindrical copper adherend having a height of 5 mm having a cross section of 10 mm in diameter, and a 5 mm diameter on it.
- a cylindrical copper adherend having a height of 2 mm having a cross section was placed, and pressure-fired under conditions of 350 ° C. and 10 MPa in a nitrogen atmosphere for 3 minutes to obtain a test piece for measuring the bonding adhesion.
- the film-like fired materials of Examples 1 to 5 were excellent in thermal conductivity and high in shear adhesive strength as compared with the film-like fired materials of Comparative Examples 1 and 2.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Powder Metallurgy (AREA)
- Adhesive Tapes (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Materials For Medical Uses (AREA)
Abstract
Description
本願は、2018年2月22日に、日本に出願された特願2018-29653号に基づき優先権を主張し、その内容をここに援用する。
従来、半導体素子から発生した熱の放熱のため、半導体素子の周りにヒートシンクが取り付けられる場合もある。しかし、ヒートシンクと半導体素子との間の接合部での熱伝導性が良好でなければ、効率的な放熱が妨げられてしまう。
また、特許文献2には、金属微粒子を60~98質量%含み、引張弾性率が10~3000MPaであり、大気雰囲気化で400℃まで昇温した後のエネルギー分散型X線分析により得られる炭素濃度が15質量%以下である加熱接合用シートが開示されている。
特許文献2に記載の加熱接合用シートは、厚さ安定性に優れるものの、必ずしも熱伝導性を充分に満足するものではなかった。
[1] 第1の金属粒子、第2の金属粒子及びバインダー成分を含有するフィルム状焼成材料であって、
前記第1の金属粒子の平均粒子径が100nm以下であり、かつ最大粒子径が250nm以下であり、
前記第2の金属粒子の平均粒子径が1000~7000nmであり、最小粒子径が250nm超であり、かつ最大粒子径が10000nm以下であり、
第1の金属粒子/第2の金属粒子で表される質量比が0.1以上である、フィルム状焼成材料。
[2] [1]に記載のフィルム状焼成材料と、前記フィルム状焼成材料の少なくとも一方の側に設けられた支持シートと、を備えた支持シート付フィルム状焼成材料。
[3] 前記支持シートが、基材フィルム上に粘着剤層が設けられたものであり、
前記粘着剤層上に、前記フィルム状焼成材料が設けられている、[2]に記載の支持シート付フィルム状焼成材料。
なお、以下の説明で用いる図は、本発明の特徴を分かり易くするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率等が実際と同じであるとは限らない。
本実施形態のフィルム状焼成材料は、第1の金属粒子、第2の金属粒子及びバインダー成分を含有するフィルム状焼成材料であって、第1の金属粒子の平均粒子径が100nm以下であり、かつ最大粒子径が250nm以下であり、第2の金属粒子の平均粒子径が1000~7000nmであり、最小粒子径が250nm超であり、かつ最大粒子径が10000nm以下であり、第1の金属粒子/第2の金属粒子で表される質量比が0.1以上である。
本発明において、フィルム状焼成材料とは、特に断らない限り、焼成前のものをいう。
図1は、本実施形態のフィルム状焼成材料を模式的に示す断面図である。フィルム状焼成材料1は、第1の金属粒子10、第2の金属粒子20及びバインダー成分30を含有している。
なお、本明細書においては、フィルム状焼成材料の場合に限らず、「複数層が互いに同一でも異なっていてもよい」とは、「すべての層が同一であってもよいし、すべての層が異なっていてもよく、一部の層のみが同一であってもよい」ことを意味し、さらに「複数層が互いに異なる」とは、「各層の構成材料、構成材料の配合比、及び厚さの少なくとも一つが互いに異なる」ことを意味する。
ここで、「フィルム状焼成材料の厚さ」とは、フィルム状焼成材料全体の厚さを意味し、例えば、複数層からなるフィルム状焼成材料の厚さとは、フィルム状焼成材料を構成するすべての層の合計の厚さを意味する。
フィルム状焼成材料は、剥離フィルム上に積層された状態で提供することができる。使用する際には、剥離フィルムを剥がし、フィルム状焼成材料を焼結接合させる対象物上に配置すればよい。剥離フィルムはフィルム状焼成材料の損傷や汚れ付着を防ぐための保護フィルムとしての機能も有する。剥離フィルムは、フィルム状焼成材料の少なくとも一方の側に設けられていればよく、フィルム状焼成材料の両方の側に設けられてよい。両方に設けられる場合、一方は支持シートとして機能する。
第1の金属粒子の平均粒子径は100nm以下である。
平均粒子径が100nm以下の金属粒子は焼結性を発揮する。すなわち、第1の金属粒子は、フィルム状焼成材料の焼成として金属粒子の融点以上の温度で加熱処理されることで粒子同士が溶融・結合して焼結体を形成可能な金属粒子である。焼結体を形成することで、フィルム状焼成材料とそれに接して焼成された物品とを焼結接合させることが可能である。具体的には、フィルム状焼成材料を介してチップと基板とを焼結接合させることが可能である。
本発明においては、第1の金属粒子を「焼結性金属粒子」ともいう。
また、フィルム状焼成材料が含む第1の金属粒子の最小粒子径は0.01nm以上が好ましく、0.1nm以上がより好ましく、1nm以上がさらに好ましい。第1の金属粒子の最小粒子径が上記下限値以上であることで、粒子自体の取扱いがより容易となると共に、バインダー成分に配合する際の飛散をより抑制できる。また、焼成材料組成物中での分散状態がより良好となる。
例えば、フィルム状焼成材料が含む第1の金属粒子の粒子径は、0.01nm以上250nm以下、0.01nm以上200nm以下、0.01nm以上150nm以下、0.1nm以上250nm以下、0.1nm以上200nm以下、0.1nm以上150nm以下、1nm以上250nm以下、1nm以上200nm以下、1nm以上150nm以下であってよい。
また、「平均粒子径」とは、特に断りのない限り、SEM撮影像またはTEM撮影像を利用した画像解析法によって求められた粒度分布曲線における、積算値50%での粒子径(D50)を意味する。
「最小粒子径」とは、SEM撮影像またはTEM撮影像で観察された最も小さな粒子径を意味し、「最大粒子径」とはSEM撮影像またはTEM撮影像で観察された最も大きな粒子径を意味する。
第1の金属粒子としては、少量でも優れた熱伝導性を発現でき、コスト面でも有利なことから、銀粒子、銅粒子が好ましい。
第1の金属粒子の表面に有機物が被覆されている場合、第1の金属粒子の質量は、被覆物を含んだ値とする。
第2の金属粒子の平均粒子径は1000~7000nmである。
平均粒子径が1000nm以上の金属粒子は焼結性を発揮しにくい、非焼結性の金属粒子である。よって、フィルム状焼成材料を焼成しても、焼結後のフィルム状焼成材料中に形状を維持して残存する。
本発明においては、第2の金属粒子を「非焼結性金属粒子」ともいう。
また、フィルム状焼成材料が含む第2の金属粒子の最大粒子径は10000nm以下であり、9000nm以下が好ましく、8000nm以下がより好ましい。第2の金属粒子の最大粒子径が上記上限値以下であることで、焼成材料組成物中でより沈降しにくくなり、焼成材料組成物をフィルム状焼成材料に加工した際に金属粒子単体や凝集物による焼成材料表面の不均一化をより一層抑制することができる。
例えば、フィルム状焼成材料が含む第2の金属粒子の粒子径は、250nm超10000nm以下、250nm超9000nm以下、250nm超8000nm以下、350nm以上10000nm以下、350nm以上9000nm以下、350nm以上8000nm以下、450nm以上10000nm以下、450nm以上9000nm以下、450nm以上8000nm以下であってよい。
第2の金属粒子の表面に有機物が被覆されている場合、第1の金属粒子の質量は、被覆物を含んだ値とする。
バインダー成分が配合されることで、焼成材料をフィルム状に成形でき、焼成前のフィルム状焼成材料に粘着性を付与することができる。バインダー成分は、フィルム状焼成材料の焼成として加熱処理されることで熱分解される熱分解性であってよい。
バインダー成分は特に限定されるものではないが、バインダー成分の好適な一例として、樹脂が挙げられる。樹脂としては、アクリル系樹脂、ポリカーボネート樹脂、ポリ乳酸、セルロース誘導体の重合物等が挙げられ、アクリル系樹脂が好ましい。アクリル系樹脂には、(メタ)アクリレート化合物の単独重合体、(メタ)アクリレート化合物の2種以上の共重合体、(メタ)アクリレート化合物と他の共重合性単量体との共重合体が含まれる。
ここでいう「由来」とは、前記モノマーが重合するのに必要な構造の変化を受けたことを意味する。
ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート、4-ヒドロキシブチル(メタ)アクリレート、3-ヒドロキシプロピル(メタ)アクリレート、2-ヒドロキシブチル(メタ)アクリレート、3-ヒドロキシブチル(メタ)アクリレートなどのヒドロキシアルキル(メタ)アクリレート;
フェノキシエチル(メタ)アクリレート、2-ヒドロキシ-3-フェノキシプロピル(メタ)アクリレートなどのフェノキシアルキル(メタ)アクリレート;
2-メトキシエチル(メタ)アクリレート、2-エトキシエチル(メタ)アクリレート、2-プロポキシエチル(メタ)アクリレート、2-ブトキシエチル(メタ)アクリレート、2-メトキシブチル(メタ)アクリレートなどのアルコキシアルキル(メタ)アクリレート;
ポリエチレングリコールモノ(メタ)アクリレート、エトキシジエチレングリコール(メタ)アクリレート、メトキシポリエチレングリコール(メタ)アクリレート、フェノキシポリエチレングリコール(メタ)アクリレート、ノニルフェノキシポリエチレングリコール(メタ)アクリレート、ポリプロピレングリコールモノ(メタ)アクリレート、メトキシポリプロピレングリコール(メタ)アクリレート、エトキシポリプロピレングリコール(メタ)アクリレート、ノニルフェノキシポリプロピレングリコール(メタ)アクリレートなどのポリアルキレングリコール(メタ)アクリレート;
シクロヘキシル(メタ)アクリレート、4-ブチルシクロヘキシル(メタ)アクリレート、ジシクロペンタニル(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンタジエニル(メタ)アクリレート、ボルニル(メタ)アクリレート、イソボルニル(メタ)アクリレート、トリシクロデカニル(メタ)アクリレートなどのシクロアルキル(メタ)アクリレート;
ベンジル(メタ)アクリレート、テトラヒドロフルフリル(メタ)アクリレート、などを挙げることができる。アルキル(メタ)アクリレート又はアルコキシアルキル(メタ)アクリレートが好ましく、特に好ましい(メタ)アクリレート化合物として、ブチル(メタ)アクリレート、エチルヘキシル(メタ)アクリレート、ラウリル(メタ)アクリレート、イソデシル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレート、及び2-エトキシエチル(メタ)アクリレートを挙げることができる。
アクリル樹脂としては、メタクリレートが好ましい。バインダー成分がメタクリレート由来の構成単位を含有することで、比較的低温で焼成することができ、焼結後に充分な接着強度を得るための条件を容易に満たすことができる。
なお、本明細書において、「質量平均分子量」とは、特に断りのない限り、ゲル・パーミエーション・クロマトグラフィー(GPC)法により測定されるポリスチレン換算値である。
本明細書において「ガラス転移温度(Tg)」とは、示差走査熱量計を用いて、試料のDSC曲線を測定し、得られたDSC曲線の変曲点の温度で表される。
バインダー成分は、焼成前のバインダー成分の総質量(100質量%)に対し、焼成後の質量が10質量%以下となるものであってよく、5質量%以下となるものであってよく、3質量%以下となるものであってよく、0質量%となるものであってもよい。
本実施形態のフィルム状焼成材料は、上記の第1の金属粒子、第2の金属粒子及びバインダー成分の他に、本発明の効果を損なわない範囲内において、第1の金属粒子、第2の金属粒子及びバインダー成分に該当しないその他の添加剤を含有していてもよい。
本実施形態のフィルム状焼成材料は、第1の金属粒子、第2の金属粒子、バインダー成分、及びその他の添加剤からなるものであってもよく、これらの含有量(質量%)の和は100質量%となる。
第1の金属粒子/第2の金属粒子は100以下が好ましく、50以下がより好ましく、25以下がさらに好ましい。
例えば、第1の金属粒子/第2の金属粒子は0.1以上100以下、0.1以上50以下、0.1以上25以下、0.2以上100以下、0.2以上50以下、0.2以上25以下、0.4以上100以下、0.4以上50以下、0.4以上25以下であってよい。
上記の本実施形態のフィルム状焼成材料によれば、300W/(m・K)以上の熱伝導率を発現しやすい。また、本実施形態のフィルム状焼成材料によれば、25MPa以上のせん断接着力を発現しやすい。熱伝導率及びせん断接着力の測定方法は、後述する実施例に記載のとおりである。
支持シート付フィルム状焼成材料の詳細は、後述する。
フィルム状焼成材料は、その構成材料を含有する焼成材料組成物を用いて形成できる。例えば、フィルム状焼成材料の形成対象面に、フィルム状焼成材料を構成するための各成分及び溶媒を含む焼成材料組成物を塗工又は印刷し、必要に応じて溶媒を揮発させることで、目的とする部位にフィルム状焼成材料を形成できる。
フィルム状焼成材料の形成対象面としては、剥離フィルムの表面が挙げられる。
沸点が350℃を上回ると、印刷後の揮発乾燥にて溶媒が揮発しにくくなり、所望の形状を確保することが困難となったり、焼成時に溶媒がフィルム内に残存してしまい、接合接着性を劣化させたりする可能性がある。沸点が65℃を下回ると印刷時に揮発してしまい、厚さの安定性が損なわれてしまう恐れがある。沸点が200~350℃の溶媒を用いれば、印刷時の溶媒の揮発による粘度上昇を抑えることができ、印刷適性を得ることができる。
フィルム状焼成材料が円形である場合、円の面積は、3.5~1,600cm2であってよく、85~1,400cm2であってよい。フィルム状焼成材料が矩形である場合、矩形の面積は、0.01~25cm2であってよく、0.25~9cm2であってよい。
また、本実施形態のフィルム状焼成材料は、フィルム状焼成材料における固形分の総質量(100質量%)に対する、第1の金属粒子及び第2の金属粒子の総含有量が80~95質量%であり、バインダー成分の含有量が5~20質量%である、フィルム状焼成材料が好ましい。
本実施形態の支持シート付フィルム状焼成材料は、上述したフィルム状焼成材料と、前記フィルム状焼成材料の少なくとも一方の側(表面)に設けられた支持シートと、を備える。前記支持シートは、基材フィルム上の全面もしくは外周部に粘着剤層が設けられたものであり、前記粘着剤層上に、前記フィルム状焼成材料が設けられていることが好ましい。前記フィルム状焼成材料は、粘着剤層に直接接触して設けられてもよく、基材フィルムに直接接触して設けられてもよい。本形態をとることで、半導体ウエハをチップに個片化する際に使用するダイシングシートとして使用することができる。且つブレード等を用いて半導体ウエハと一緒に個片化することでチップと同形のフィルム状焼成材料として加工することができ、且つフィルム状焼成材料付チップを製造することができる。
基材フィルム3としては、特に限定されず、例えば低密度ポリエチレン(LDPE)、直鎖低密度ポリエチレン(LLDPE)、エチレン・プロピレン共重合体、ポリプロピレン、ポリブテン、ポリブタジエン、ポリメチルペンテン、エチレン・酢酸ビニル共重合体、エチレン・(メタ)アクリル酸共重合体、エチレン・(メタ)アクリル酸メチル共重合体、エチレン・(メタ)アクリル酸エチル共重合体、ポリ塩化ビニル、塩化ビニル・酢酸ビニル共重合体、ポリウレタンフィルム、アイオノマー等からなるフィルムなどが用いられる。なお、本明細書において「(メタ)アクリル」は、アクリル及びメタクリルの両者を含む意味で用いる。
また支持シートに対してより高い耐熱性が求められる場合には、基材フィルム3としては、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレートなどのポリエステルフィルム、ポリプロピレン、ポリメチルペンテンなどのポリオレフィンフィルム等が挙げられる。また、これらの架橋フィルムや放射線・放電等による改質フィルムも用いることができる。基材フィルムは上記フィルムの積層体であってもよい。
支持シート2は、少なくともその外周部に粘着部を有する。粘着部は、支持シート付フィルム状焼成材料100a、100bの外周部において、リングフレーム5を一時的に固定する機能を有し、所要の工程後にはリングフレーム5が剥離可能であることが好ましい。したがって、粘着剤層4には、弱粘着性のものを使用してもよいし、エネルギー線照射により粘着力が低下するエネルギー線硬化性のものを使用してもよい。再剥離性粘着剤層は、公知の種々の粘着剤(例えば、ゴム系、アクリル系、シリコーン系、ウレタン系、ポリビニルエーテル系などの汎用粘着剤、表面凹凸のある粘着剤、エネルギー線硬化型粘着剤、熱膨張成分含有粘着剤等)により形成できる。
支持シート付フィルム状焼成材料は、外周部に粘着部を有する支持シートの内周部にフィルム状焼成材料が剥離可能に仮着されてなる。図2で示した構成例では、支持シート付フィルム状焼成材料100aは、基材フィルム3と粘着剤層4とからなる支持シート2の内周部にフィルム状焼成材料1が剥離可能に積層され、支持シート2の外周部に粘着剤層4が露出している。この構成例では、支持シート2よりも小径のフィルム状焼成材料1が、支持シート2の粘着剤層4上に同心円状に剥離可能に積層されていることが好ましい。
ここで、「支持シート付フィルム状焼成材料の厚さ」とは、支持シート付フィルム状焼成材料全体の厚さを意味し、例えば、複数層からなる支持シート付フィルム状焼成材料の厚さとは、支持シート付フィルム状焼成材料を構成するすべての層の厚さを意味する。
前記支持シート付フィルム状焼成材料は、上述の各層を対応する位置関係となるように順次積層することで製造できる。
例えば、基材フィルム上に粘着剤層又はフィルム状焼成材料を積層する場合には、剥離フィルム上に、これを構成するための成分及び溶媒を含有する粘着剤組成物又は焼成材料組成物を塗工又は印刷し、必要に応じて乾燥させ溶媒を揮発させてフィルム状とすることで、剥離フィルム上に粘着剤層又はフィルム状焼成材料をあらかじめ形成しておき、この形成済みの粘着剤層又はフィルム状焼成材料の前記剥離フィルムと接触している側とは反対側の露出面を、基材フィルムの表面と貼り合わせればよい。このとき、粘着剤組成物又は焼成材料組成物は、剥離フィルムの剥離処理面に塗工又は印刷することが好ましい。剥離フィルムは、積層構造の形成後、必要に応じて取り除けばよい。粘着剤組成物又は焼成材料組成物における、これを構成するための各成分の含有量は各成分の合計で50~99質量%、溶媒の含有量は1~50質量%であってよい。
次に本発明に係る支持シート付フィルム状焼成材料の利用方法について、該焼成材料をチップ付基板の製造に適用した場合を例にとって説明する。
工程(2):フィルム状焼成材料と、支持シートとを剥離し、フィルム状焼成材料付チップを得る工程、
工程(3):基板の表面に、フィルム状焼成材料付チップを貼付する工程、
工程(4):フィルム状焼成材料を焼成し、チップと基板とを接合する工程。
半導体ウエハはシリコンウエハ及びシリコンカーバイドウエハであってもよく、またガリウム・砒素などの化合物半導体ウエハであってもよい。半導体ウエハの表面には、回路が形成されていてもよい。ウエハ表面への回路の形成はエッチング法、リフトオフ法などの従来汎用されている方法を含む様々な方法により行うことができる。次いで、半導体ウエハの回路面の反対面(裏面)を研削する。研削法は特に限定はされず、グラインダーなどを用いた公知の手段で研削してもよい。裏面研削時には、表面の回路を保護するために回路面に、表面保護シートと呼ばれる粘着シートを貼付する。裏面研削は、ウエハの回路面側(すなわち表面保護シート側)をチャックテーブル等により固定し、回路が形成されていない裏面側をグラインダーにより研削する。ウエハの研削後の厚さは特に限定はされないが、通常は20~500μm程度である。その後、必要に応じ、裏面研削時に生じた破砕層を除去する。破砕層の除去は、ケミカルエッチングや、プラズマエッチングなどにより行われる。
なお、表面に回路が形成された半導体ウエハを個片化したもの(チップ)を特に、素子又は半導体素子ともいう。
次いでフィルム状焼成材料を焼成し、基板とチップとを焼結接合する。このとき、フィルム状焼成材料付チップのフィルム状焼成材料の露出面を、基板に貼付けておけば、フィルム状焼成材料を介してチップと前記基板とを焼結接合できる。
<焼成材料組成物の製造>
下記表1に示す種類の第1の金属粒子及び第2の金属粒子を合計で95質量部と、バインダー成分(2-エチルヘキシルメタクリレート重合体、質量平均分子量260,000、L-0818、日本合成化学社製、MEK希釈品、固形分58.4質量%、Tg:-10℃)を固形分換算で5質量部混合し、溶媒(ブチルカルビトール)で固形分濃度が75質量%になるまで希釈し、焼成材料組成物を得た。
第1の金属粒子と第2の金属粒子とは、第1の金属粒子/第2の金属粒子で表される質量比が表1に示す値となるように混合した。
なお、第1の金属粒子の粒子径はTEMで測定し、第2の金属粒子の粒子径はSEMで測定した。
片面に剥離処理を施したポリエチレンテレフタレート系フィルムである剥離フィルム(厚さ38μm、SP-PET381031、リンテック社製)の片面に、上記で得られた焼成材料組成物を塗工し、110℃10分間乾燥させることで、厚さ75μmのフィルム状焼成材料を得た。
焼成前のフィルム状焼成材料と、重量で約10倍量の有機溶媒とを混合した後にこれを第1の金属粒子及び第2の金属粒子が沈降するまで、約30分間、静置した。この上澄み液をシリンジで抜き取り、120℃10分間乾燥した後の残留物を回収することで、フィルム状焼成材料から第1の金属粒子及び第2の金属粒子を除いた成分を分取した。また上記シリンジで上澄み液を抜き取った後の第1の金属粒子及び第2の金属粒子が含まれる液に対して、再び、フィルム状焼成材料の約10倍量の有機溶媒を混合した後にこれを第1の金属粒子及び第2の金属粒子が沈降するまで、約30分間、静置し、上澄み液をシリンジで抜き取った。この有機溶媒の混合と静置および上澄み液の抜き取りを5回繰り返した後、残った液を120℃10分間乾燥した後、残留物を回収することで、第1の金属粒子及び第2の金属粒子を分取した。
上記で得られた焼成材料組成物及びフィルム状焼成材料について、下記項目を測定及び評価した。
焼成材料組成物及びフィルム状焼成材料を目視にて観察し、凝集物の有無を確認した。
焼成材料組成物及びフィルム状焼成材料のいずれにも凝集物が認められない場合を「○:分散状態良好」と判断した。焼成材料組成物及びフィルム状焼成材料の少なくとも一方に凝集物が認められた場合を「×:分散状態不良」と判断した。結果を表1に示す。
JIS K7130に準じて、定圧厚さ測定器(テクロック社製、製品名「PG-02」)を用いて測定した。
フィルム状焼成材料の焼成後の熱伝導率は、以下の方法により測定した。
上記で得られたフィルム状焼成材料を10mm×10mmにカットしたものを、焼成後の厚さが150μm前後となるよう複数枚積層し、積層体(1)を得た。得られた積層体(1)の両面に、厚さ100μm、面積20mm×20mmのアルミシートを貼付し、積層体(2)を得た。得られた積層体(2)を直径10mmの断面を持つ高さ5mmの円柱体形状の銅片と、直径5mmの断面を持つ高さ2mmの円柱体形状の銅片とで挟み、窒素雰囲気下で350℃、10MPaの条件にて3分間加圧焼成し、2枚のアルミシートで挟まれた焼成体を得た。次いで、焼成体から2枚のアルミシートを剥がし、熱伝導率測定用の試験片を得た。なお、焼成前のフィルム状焼成材料の積層後の厚さは、フィルム状焼成材料中の金属粒子の体積割合によりおおよそ決まり、150μmをフィルム状焼成材料中の金属粒子の体積割合で割った値が、焼成前のフィルム状焼成材料の積層後の厚さの目安となる。
次いで、熱伝導率測定装置(株式会社アイフェイズ製 製品名「アイフェイズ・モバイル1u」)を用いて、試験片の熱拡散率を測定し、その後、試験片の比熱と比重から試験片の熱伝導率を算出した。測定は複数回実施し、標準偏差が平均値の半分以下となるように、他の値に比べて大きく異なるものを除外したものの中から5点以上を選択し、それらの平均値をフィルム状焼成材料の焼成後の熱伝導率とした。結果を表1に示す。
フィルム状焼成材料の焼成後のせん断接着力は、以下の方法により測定した。
上記で得られたフィルム状焼成材料を10mm×10mmにカットし、これを直径10mmの断面を持つ高さ5mmの、円柱体形状の銅被着体の上面に貼付し、その上に直径5mmの断面を持つ高さ2mmの、円柱体形状の銅被着体を載せて、窒素雰囲気下で350℃、10MPaの条件にて3分間加圧焼成し、接合接着力測定用試験片を得た。常温で、この試験片の接着面に対して6mm/分の速度でせん断方向から力を加え、接着状態が破壊するときの強度を測定し、これをせん断接着力とした。結果を表1に示す。
2 支持シート
3 基材フィルム
4 粘着剤層
5 リングフレーム
10 第1の金属粒子
20 第2の金属粒子
30 バインダー成分
100a 支持シート付フィルム状焼成材料
100b 支持シート付フィルム状焼成材料
Claims (3)
- 第1の金属粒子、第2の金属粒子及びバインダー成分を含有するフィルム状焼成材料であって、
前記第1の金属粒子の平均粒子径が100nm以下であり、かつ最大粒子径が250nm以下であり、
前記第2の金属粒子の平均粒子径が1000~7000nmであり、最小粒子径が250nm超であり、かつ最大粒子径が10000nm以下であり、
第1の金属粒子/第2の金属粒子で表される質量比が0.1以上である、フィルム状焼成材料。 - 請求項1に記載のフィルム状焼成材料と、前記フィルム状焼成材料の少なくとも一方の側に設けられた支持シートと、を備えた支持シート付フィルム状焼成材料。
- 前記支持シートが、基材フィルム上に粘着剤層が設けられたものであり、
前記粘着剤層上に、前記フィルム状焼成材料が設けられている、請求項2に記載の支持シート付フィルム状焼成材料。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP19757242.3A EP3756789A4 (en) | 2018-02-22 | 2019-02-08 | FILM TYPE COOKING MATERIAL, AND FILM TYPE COOKING MATERIAL WITH SUPPORT SHEET |
KR1020207023738A KR102313686B1 (ko) | 2018-02-22 | 2019-02-08 | 필름상 소성재료, 및 지지 시트를 가지는 필름상 소성재료 |
US16/970,484 US11948865B2 (en) | 2018-02-22 | 2019-02-08 | Film-shaped firing material and film-shaped firing material with a support sheet |
JP2020501679A JP7124049B2 (ja) | 2018-02-22 | 2019-02-08 | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 |
CN201980014303.XA CN111741823B (zh) | 2018-02-22 | 2019-02-08 | 膜状烧成材料及带支撑片的膜状烧成材料 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-029653 | 2018-02-22 | ||
JP2018029653 | 2018-02-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019163568A1 true WO2019163568A1 (ja) | 2019-08-29 |
Family
ID=67688087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2019/004650 WO2019163568A1 (ja) | 2018-02-22 | 2019-02-08 | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11948865B2 (ja) |
EP (1) | EP3756789A4 (ja) |
JP (1) | JP7124049B2 (ja) |
KR (1) | KR102313686B1 (ja) |
CN (1) | CN111741823B (ja) |
TW (1) | TWI818955B (ja) |
WO (1) | WO2019163568A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230018086A1 (en) * | 2019-11-22 | 2023-01-19 | Lintec Corporation | Film-shaped firing material, film-shaped firing material with support sheet, multilayer body, and method for producing device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12035989B2 (en) | 2021-08-02 | 2024-07-16 | Corindus, Inc. | Systems and methods for a control station for robotic interventional procedures using a plurality of elongated medical devices |
CN118786521A (zh) * | 2022-03-15 | 2024-10-15 | 阿尔法装配解决方案公司 | 烧结就绪多层线/带键合焊盘和用于管芯顶部附接的方法 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000038608A (ja) * | 1998-07-24 | 2000-02-08 | Nichia Chem Ind Ltd | 希土類鉄窒素系磁性粉末及びその製造方法 |
JP2002016345A (ja) * | 2000-06-28 | 2002-01-18 | Hitachi Ltd | 導電性ペーストおよび導電性粉末組成物、グリーンシート、セラミック多層回路基板およびその製造方法 |
JP2010118280A (ja) * | 2008-11-14 | 2010-05-27 | Sumitomo Electric Ind Ltd | 導電性ペースト及びそれを用いた電磁波シールドフィルム、電磁波シールドフレキシブルプリント配線板 |
JP2013019968A (ja) * | 2011-07-07 | 2013-01-31 | Zte Corp | 周波数帯コピー方法、装置及びオーディオ復号化方法、システム |
JP2014111800A (ja) | 2012-12-05 | 2014-06-19 | Nippon Handa Kk | ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP2015130417A (ja) * | 2014-01-08 | 2015-07-16 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
JP2016121329A (ja) | 2014-12-24 | 2016-07-07 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP2016164864A (ja) * | 2015-02-27 | 2016-09-08 | 株式会社ノリタケカンパニーリミテド | Agペーストおよび当該Agペースト用のAg粉末 |
JP2017069558A (ja) * | 2015-09-30 | 2017-04-06 | 日東電工株式会社 | パワー半導体装置の製造方法 |
JP2017179551A (ja) * | 2016-03-31 | 2017-10-05 | 新日鉄住金化学株式会社 | ニッケル粒子、導電性ペースト、内部電極及び積層セラミックコンデンサ |
JP2018029653A (ja) | 2016-08-22 | 2018-03-01 | 株式会社日立製作所 | 超音波撮像装置、および、超音波画像生成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6830823B1 (en) * | 1997-02-24 | 2004-12-14 | Superior Micropowders Llc | Gold powders, methods for producing powders and devices fabricated from same |
JP4872663B2 (ja) | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | 接合用材料及び接合方法 |
JP5387034B2 (ja) * | 2009-02-20 | 2014-01-15 | 大日本印刷株式会社 | 導電性基板 |
JP2013199686A (ja) | 2012-03-26 | 2013-10-03 | Toho Titanium Co Ltd | 金属多孔体の製造方法 |
KR102675888B1 (ko) | 2012-10-29 | 2024-06-14 | 알파 어셈블리 솔루션스 인크. | 소결 분말 |
TW201611198A (zh) * | 2014-04-11 | 2016-03-16 | 阿爾發金屬公司 | 低壓燒結粉末 |
CN106488821A (zh) * | 2014-07-22 | 2017-03-08 | 住友电气工业株式会社 | 金属微粒分散液和金属覆膜 |
EP3190613B1 (en) * | 2014-09-02 | 2019-05-15 | A.L.M.T. Corp. | Heat dissipation member and method for producing heat dissipation member |
KR102612643B1 (ko) | 2015-09-01 | 2023-12-11 | 린텍 가부시키가이샤 | 점착 시트 |
JP2017089000A (ja) * | 2015-11-10 | 2017-05-25 | 旭硝子株式会社 | 銅粒子およびその製造方法、導電膜形成用ペースト、ならびに物品 |
JP6864505B2 (ja) | 2016-06-24 | 2021-04-28 | 日東電工株式会社 | 加熱接合用シート及びダイシングテープ付き加熱接合用シート |
EP3711879A4 (en) | 2017-11-13 | 2021-08-25 | Nitto Denko Corporation | COMPOSITION FOR SINTERBINDING, FILM FOR SINTERBINDING AND SAW TAPE WITH FILM FOR SINTERBINDING |
-
2019
- 2019-02-08 CN CN201980014303.XA patent/CN111741823B/zh active Active
- 2019-02-08 EP EP19757242.3A patent/EP3756789A4/en active Pending
- 2019-02-08 US US16/970,484 patent/US11948865B2/en active Active
- 2019-02-08 WO PCT/JP2019/004650 patent/WO2019163568A1/ja unknown
- 2019-02-08 JP JP2020501679A patent/JP7124049B2/ja active Active
- 2019-02-08 KR KR1020207023738A patent/KR102313686B1/ko active IP Right Grant
- 2019-02-19 TW TW108105427A patent/TWI818955B/zh active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000038608A (ja) * | 1998-07-24 | 2000-02-08 | Nichia Chem Ind Ltd | 希土類鉄窒素系磁性粉末及びその製造方法 |
JP2002016345A (ja) * | 2000-06-28 | 2002-01-18 | Hitachi Ltd | 導電性ペーストおよび導電性粉末組成物、グリーンシート、セラミック多層回路基板およびその製造方法 |
JP2010118280A (ja) * | 2008-11-14 | 2010-05-27 | Sumitomo Electric Ind Ltd | 導電性ペースト及びそれを用いた電磁波シールドフィルム、電磁波シールドフレキシブルプリント配線板 |
JP2013019968A (ja) * | 2011-07-07 | 2013-01-31 | Zte Corp | 周波数帯コピー方法、装置及びオーディオ復号化方法、システム |
JP2014111800A (ja) | 2012-12-05 | 2014-06-19 | Nippon Handa Kk | ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP2015130417A (ja) * | 2014-01-08 | 2015-07-16 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
JP2016121329A (ja) | 2014-12-24 | 2016-07-07 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP2016164864A (ja) * | 2015-02-27 | 2016-09-08 | 株式会社ノリタケカンパニーリミテド | Agペーストおよび当該Agペースト用のAg粉末 |
JP2017069558A (ja) * | 2015-09-30 | 2017-04-06 | 日東電工株式会社 | パワー半導体装置の製造方法 |
JP2017179551A (ja) * | 2016-03-31 | 2017-10-05 | 新日鉄住金化学株式会社 | ニッケル粒子、導電性ペースト、内部電極及び積層セラミックコンデンサ |
JP2018029653A (ja) | 2016-08-22 | 2018-03-01 | 株式会社日立製作所 | 超音波撮像装置、および、超音波画像生成方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3756789A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230018086A1 (en) * | 2019-11-22 | 2023-01-19 | Lintec Corporation | Film-shaped firing material, film-shaped firing material with support sheet, multilayer body, and method for producing device |
EP4063044A4 (en) * | 2019-11-22 | 2023-12-06 | Lintec Corporation | FILM-LIKE COOKING MATERIAL, FILM-LIKE COOKING MATERIAL WITH BACKING SHEET, MULTI-LAYER BODY, AND DEVICE PRODUCTION METHOD |
Also Published As
Publication number | Publication date |
---|---|
US11948865B2 (en) | 2024-04-02 |
TWI818955B (zh) | 2023-10-21 |
JPWO2019163568A1 (ja) | 2020-12-03 |
TW201938293A (zh) | 2019-10-01 |
EP3756789A4 (en) | 2021-11-24 |
JP7124049B2 (ja) | 2022-08-23 |
KR102313686B1 (ko) | 2021-10-18 |
CN111741823A (zh) | 2020-10-02 |
KR20200106200A (ko) | 2020-09-11 |
EP3756789A1 (en) | 2020-12-30 |
CN111741823B (zh) | 2023-04-04 |
US20210078080A1 (en) | 2021-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2018198570A1 (ja) | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 | |
US11420255B2 (en) | Film-shaped firing material and film-shaped firing material with a support sheet | |
JP7080721B2 (ja) | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 | |
WO2019163568A1 (ja) | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 | |
JP6327630B1 (ja) | フィルム状焼成材料、支持シート付フィルム状焼成材料、フィルム状焼成材料の製造方法、及び支持シート付フィルム状焼成材料の製造方法 | |
JP6555694B2 (ja) | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 | |
EP3667707A1 (en) | Film-shaped firing material and support-sheet-equipped film-shaped firing material | |
CN111201098B (zh) | 烧成材料组合物、膜状烧成材料的制造方法、及带支撑片的膜状烧成材料的制造方法 | |
US11267992B2 (en) | Film-shaped firing material and film-shaped firing material with support sheet | |
JP6555695B2 (ja) | フィルム状焼成材料、及び支持シート付フィルム状焼成材料 | |
JP7080725B2 (ja) | 支持シート付フィルム状焼成材料、及び半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 19757242 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2020501679 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20207023738 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2019757242 Country of ref document: EP Effective date: 20200922 |