JPWO2019163568A1 - フィルム状焼成材料、及び支持シート付フィルム状焼成材料 - Google Patents
フィルム状焼成材料、及び支持シート付フィルム状焼成材料 Download PDFInfo
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- JPWO2019163568A1 JPWO2019163568A1 JP2020501679A JP2020501679A JPWO2019163568A1 JP WO2019163568 A1 JPWO2019163568 A1 JP WO2019163568A1 JP 2020501679 A JP2020501679 A JP 2020501679A JP 2020501679 A JP2020501679 A JP 2020501679A JP WO2019163568 A1 JPWO2019163568 A1 JP WO2019163568A1
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Abstract
Description
本願は、2018年2月22日に、日本に出願された特願2018−29653号に基づき優先権を主張し、その内容をここに援用する。
従来、半導体素子から発生した熱の放熱のため、半導体素子の周りにヒートシンクが取り付けられる場合もある。しかし、ヒートシンクと半導体素子との間の接合部での熱伝導性が良好でなければ、効率的な放熱が妨げられてしまう。
また、特許文献2には、金属微粒子を60〜98質量%含み、引張弾性率が10〜3000MPaであり、大気雰囲気化で400℃まで昇温した後のエネルギー分散型X線分析により得られる炭素濃度が15質量%以下である加熱接合用シートが開示されている。
特許文献2に記載の加熱接合用シートは、厚さ安定性に優れるものの、必ずしも熱伝導性を充分に満足するものではなかった。
[1] 第1の金属粒子、第2の金属粒子及びバインダー成分を含有するフィルム状焼成材料であって、
前記第1の金属粒子の平均粒子径が100nm以下であり、かつ最大粒子径が250nm以下であり、
前記第2の金属粒子の平均粒子径が1000〜7000nmであり、最小粒子径が250nm超であり、かつ最大粒子径が10000nm以下であり、
第1の金属粒子/第2の金属粒子で表される質量比が0.1以上である、フィルム状焼成材料。
[2] [1]に記載のフィルム状焼成材料と、前記フィルム状焼成材料の少なくとも一方の側に設けられた支持シートと、を備えた支持シート付フィルム状焼成材料。
[3] 前記支持シートが、基材フィルム上に粘着剤層が設けられたものであり、
前記粘着剤層上に、前記フィルム状焼成材料が設けられている、[2]に記載の支持シート付フィルム状焼成材料。
なお、以下の説明で用いる図は、本発明の特徴を分かり易くするために、便宜上、要部となる部分を拡大して示している場合があり、各構成要素の寸法比率等が実際と同じであるとは限らない。
本実施形態のフィルム状焼成材料は、第1の金属粒子、第2の金属粒子及びバインダー成分を含有するフィルム状焼成材料であって、第1の金属粒子の平均粒子径が100nm以下であり、かつ最大粒子径が250nm以下であり、第2の金属粒子の平均粒子径が1000〜7000nmであり、最小粒子径が250nm超であり、かつ最大粒子径が10000nm以下であり、第1の金属粒子/第2の金属粒子で表される質量比が0.1以上である。
本発明において、フィルム状焼成材料とは、特に断らない限り、焼成前のものをいう。
図1は、本実施形態のフィルム状焼成材料を模式的に示す断面図である。フィルム状焼成材料1は、第1の金属粒子10、第2の金属粒子20及びバインダー成分30を含有している。
なお、本明細書においては、フィルム状焼成材料の場合に限らず、「複数層が互いに同一でも異なっていてもよい」とは、「すべての層が同一であってもよいし、すべての層が異なっていてもよく、一部の層のみが同一であってもよい」ことを意味し、さらに「複数層が互いに異なる」とは、「各層の構成材料、構成材料の配合比、及び厚さの少なくとも一つが互いに異なる」ことを意味する。
ここで、「フィルム状焼成材料の厚さ」とは、フィルム状焼成材料全体の厚さを意味し、例えば、複数層からなるフィルム状焼成材料の厚さとは、フィルム状焼成材料を構成するすべての層の合計の厚さを意味する。
フィルム状焼成材料は、剥離フィルム上に積層された状態で提供することができる。使用する際には、剥離フィルムを剥がし、フィルム状焼成材料を焼結接合させる対象物上に配置すればよい。剥離フィルムはフィルム状焼成材料の損傷や汚れ付着を防ぐための保護フィルムとしての機能も有する。剥離フィルムは、フィルム状焼成材料の少なくとも一方の側に設けられていればよく、フィルム状焼成材料の両方の側に設けられてよい。両方に設けられる場合、一方は支持シートとして機能する。
第1の金属粒子の平均粒子径は100nm以下である。
平均粒子径が100nm以下の金属粒子は焼結性を発揮する。すなわち、第1の金属粒子は、フィルム状焼成材料の焼成として金属粒子の融点以上の温度で加熱処理されることで粒子同士が溶融・結合して焼結体を形成可能な金属粒子である。焼結体を形成することで、フィルム状焼成材料とそれに接して焼成された物品とを焼結接合させることが可能である。具体的には、フィルム状焼成材料を介してチップと基板とを焼結接合させることが可能である。
本発明においては、第1の金属粒子を「焼結性金属粒子」ともいう。
また、フィルム状焼成材料が含む第1の金属粒子の最小粒子径は0.01nm以上が好ましく、0.1nm以上がより好ましく、1nm以上がさらに好ましい。第1の金属粒子の最小粒子径が上記下限値以上であることで、粒子自体の取扱いがより容易となると共に、バインダー成分に配合する際の飛散をより抑制できる。また、焼成材料組成物中での分散状態がより良好となる。
例えば、フィルム状焼成材料が含む第1の金属粒子の粒子径は、0.01nm以上250nm以下、0.01nm以上200nm以下、0.01nm以上150nm以下、0.1nm以上250nm以下、0.1nm以上200nm以下、0.1nm以上150nm以下、1nm以上250nm以下、1nm以上200nm以下、1nm以上150nm以下であってよい。
また、「平均粒子径」とは、特に断りのない限り、SEM撮影像またはTEM撮影像を利用した画像解析法によって求められた粒度分布曲線における、積算値50%での粒子径(D50)を意味する。
「最小粒子径」とは、SEM撮影像またはTEM撮影像で観察された最も小さな粒子径を意味し、「最大粒子径」とはSEM撮影像またはTEM撮影像で観察された最も大きな粒子径を意味する。
第1の金属粒子としては、少量でも優れた熱伝導性を発現でき、コスト面でも有利なことから、銀粒子、銅粒子が好ましい。
第1の金属粒子の表面に有機物が被覆されている場合、第1の金属粒子の質量は、被覆物を含んだ値とする。
第2の金属粒子の平均粒子径は1000〜7000nmである。
平均粒子径が1000nm以上の金属粒子は焼結性を発揮しにくい、非焼結性の金属粒子である。よって、フィルム状焼成材料を焼成しても、焼結後のフィルム状焼成材料中に形状を維持して残存する。
本発明においては、第2の金属粒子を「非焼結性金属粒子」ともいう。
また、フィルム状焼成材料が含む第2の金属粒子の最大粒子径は10000nm以下であり、9000nm以下が好ましく、8000nm以下がより好ましい。第2の金属粒子の最大粒子径が上記上限値以下であることで、焼成材料組成物中でより沈降しにくくなり、焼成材料組成物をフィルム状焼成材料に加工した際に金属粒子単体や凝集物による焼成材料表面の不均一化をより一層抑制することができる。
例えば、フィルム状焼成材料が含む第2の金属粒子の粒子径は、250nm超10000nm以下、250nm超9000nm以下、250nm超8000nm以下、350nm以上10000nm以下、350nm以上9000nm以下、350nm以上8000nm以下、450nm以上10000nm以下、450nm以上9000nm以下、450nm以上8000nm以下であってよい。
第2の金属粒子の表面に有機物が被覆されている場合、第1の金属粒子の質量は、被覆物を含んだ値とする。
バインダー成分が配合されることで、焼成材料をフィルム状に成形でき、焼成前のフィルム状焼成材料に粘着性を付与することができる。バインダー成分は、フィルム状焼成材料の焼成として加熱処理されることで熱分解される熱分解性であってよい。
バインダー成分は特に限定されるものではないが、バインダー成分の好適な一例として、樹脂が挙げられる。樹脂としては、アクリル系樹脂、ポリカーボネート樹脂、ポリ乳酸、セルロース誘導体の重合物等が挙げられ、アクリル系樹脂が好ましい。アクリル系樹脂には、(メタ)アクリレート化合物の単独重合体、(メタ)アクリレート化合物の2種以上の共重合体、(メタ)アクリレート化合物と他の共重合性単量体との共重合体が含まれる。
ここでいう「由来」とは、前記モノマーが重合するのに必要な構造の変化を受けたことを意味する。
ヒドロキシエチル(メタ)アクリレート、2−ヒドロキシプロピル(メタ)アクリレート、4−ヒドロキシブチル(メタ)アクリレート、3−ヒドロキシプロピル(メタ)アクリレート、2−ヒドロキシブチル(メタ)アクリレート、3−ヒドロキシブチル(メタ)アクリレートなどのヒドロキシアルキル(メタ)アクリレート;
フェノキシエチル(メタ)アクリレート、2−ヒドロキシ−3−フェノキシプロピル(メタ)アクリレートなどのフェノキシアルキル(メタ)アクリレート;
2−メトキシエチル(メタ)アクリレート、2−エトキシエチル(メタ)アクリレート、2−プロポキシエチル(メタ)アクリレート、2−ブトキシエチル(メタ)アクリレート、2−メトキシブチル(メタ)アクリレートなどのアルコキシアルキル(メタ)アクリレート;
ポリエチレングリコールモノ(メタ)アクリレート、エトキシジエチレングリコール(メタ)アクリレート、メトキシポリエチレングリコール(メタ)アクリレート、フェノキシポリエチレングリコール(メタ)アクリレート、ノニルフェノキシポリエチレングリコール(メタ)アクリレート、ポリプロピレングリコールモノ(メタ)アクリレート、メトキシポリプロピレングリコール(メタ)アクリレート、エトキシポリプロピレングリコール(メタ)アクリレート、ノニルフェノキシポリプロピレングリコール(メタ)アクリレートなどのポリアルキレングリコール(メタ)アクリレート;
シクロヘキシル(メタ)アクリレート、4−ブチルシクロヘキシル(メタ)アクリレート、ジシクロペンタニル(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンタジエニル(メタ)アクリレート、ボルニル(メタ)アクリレート、イソボルニル(メタ)アクリレート、トリシクロデカニル(メタ)アクリレートなどのシクロアルキル(メタ)アクリレート;
ベンジル(メタ)アクリレート、テトラヒドロフルフリル(メタ)アクリレート、などを挙げることができる。アルキル(メタ)アクリレート又はアルコキシアルキル(メタ)アクリレートが好ましく、特に好ましい(メタ)アクリレート化合物として、ブチル(メタ)アクリレート、エチルヘキシル(メタ)アクリレート、ラウリル(メタ)アクリレート、イソデシル(メタ)アクリレート、2−エチルヘキシル(メタ)アクリレート、及び2−エトキシエチル(メタ)アクリレートを挙げることができる。
アクリル樹脂としては、メタクリレートが好ましい。バインダー成分がメタクリレート由来の構成単位を含有することで、比較的低温で焼成することができ、焼結後に充分な接着強度を得るための条件を容易に満たすことができる。
なお、本明細書において、「質量平均分子量」とは、特に断りのない限り、ゲル・パーミエーション・クロマトグラフィー(GPC)法により測定されるポリスチレン換算値である。
本明細書において「ガラス転移温度(Tg)」とは、示差走査熱量計を用いて、試料のDSC曲線を測定し、得られたDSC曲線の変曲点の温度で表される。
バインダー成分は、焼成前のバインダー成分の総質量(100質量%)に対し、焼成後の質量が10質量%以下となるものであってよく、5質量%以下となるものであってよく、3質量%以下となるものであってよく、0質量%となるものであってもよい。
本実施形態のフィルム状焼成材料は、上記の第1の金属粒子、第2の金属粒子及びバインダー成分の他に、本発明の効果を損なわない範囲内において、第1の金属粒子、第2の金属粒子及びバインダー成分に該当しないその他の添加剤を含有していてもよい。
本実施形態のフィルム状焼成材料は、第1の金属粒子、第2の金属粒子、バインダー成分、及びその他の添加剤からなるものであってもよく、これらの含有量(質量%)の和は100質量%となる。
第1の金属粒子/第2の金属粒子は100以下が好ましく、50以下がより好ましく、25以下がさらに好ましい。
例えば、第1の金属粒子/第2の金属粒子は0.1以上100以下、0.1以上50以下、0.1以上25以下、0.2以上100以下、0.2以上50以下、0.2以上25以下、0.4以上100以下、0.4以上50以下、0.4以上25以下であってよい。
上記の本実施形態のフィルム状焼成材料によれば、300W/(m・K)以上の熱伝導率を発現しやすい。また、本実施形態のフィルム状焼成材料によれば、25MPa以上のせん断接着力を発現しやすい。熱伝導率及びせん断接着力の測定方法は、後述する実施例に記載のとおりである。
支持シート付フィルム状焼成材料の詳細は、後述する。
フィルム状焼成材料は、その構成材料を含有する焼成材料組成物を用いて形成できる。例えば、フィルム状焼成材料の形成対象面に、フィルム状焼成材料を構成するための各成分及び溶媒を含む焼成材料組成物を塗工又は印刷し、必要に応じて溶媒を揮発させることで、目的とする部位にフィルム状焼成材料を形成できる。
フィルム状焼成材料の形成対象面としては、剥離フィルムの表面が挙げられる。
沸点が350℃を上回ると、印刷後の揮発乾燥にて溶媒が揮発しにくくなり、所望の形状を確保することが困難となったり、焼成時に溶媒がフィルム内に残存してしまい、接合接着性を劣化させたりする可能性がある。沸点が65℃を下回ると印刷時に揮発してしまい、厚さの安定性が損なわれてしまう恐れがある。沸点が200〜350℃の溶媒を用いれば、印刷時の溶媒の揮発による粘度上昇を抑えることができ、印刷適性を得ることができる。
フィルム状焼成材料が円形である場合、円の面積は、3.5〜1,600cm2であってよく、85〜1,400cm2であってよい。フィルム状焼成材料が矩形である場合、矩形の面積は、0.01〜25cm2であってよく、0.25〜9cm2であってよい。
また、本実施形態のフィルム状焼成材料は、フィルム状焼成材料における固形分の総質量(100質量%)に対する、第1の金属粒子及び第2の金属粒子の総含有量が80〜95質量%であり、バインダー成分の含有量が5〜20質量%である、フィルム状焼成材料が好ましい。
本実施形態の支持シート付フィルム状焼成材料は、上述したフィルム状焼成材料と、前記フィルム状焼成材料の少なくとも一方の側(表面)に設けられた支持シートと、を備える。前記支持シートは、基材フィルム上の全面もしくは外周部に粘着剤層が設けられたものであり、前記粘着剤層上に、前記フィルム状焼成材料が設けられていることが好ましい。前記フィルム状焼成材料は、粘着剤層に直接接触して設けられてもよく、基材フィルムに直接接触して設けられてもよい。本形態をとることで、半導体ウエハをチップに個片化する際に使用するダイシングシートとして使用することができる。且つブレード等を用いて半導体ウエハと一緒に個片化することでチップと同形のフィルム状焼成材料として加工することができ、且つフィルム状焼成材料付チップを製造することができる。
基材フィルム3としては、特に限定されず、例えば低密度ポリエチレン(LDPE)、直鎖低密度ポリエチレン(LLDPE)、エチレン・プロピレン共重合体、ポリプロピレン、ポリブテン、ポリブタジエン、ポリメチルペンテン、エチレン・酢酸ビニル共重合体、エチレン・(メタ)アクリル酸共重合体、エチレン・(メタ)アクリル酸メチル共重合体、エチレン・(メタ)アクリル酸エチル共重合体、ポリ塩化ビニル、塩化ビニル・酢酸ビニル共重合体、ポリウレタンフィルム、アイオノマー等からなるフィルムなどが用いられる。なお、本明細書において「(メタ)アクリル」は、アクリル及びメタクリルの両者を含む意味で用いる。
また支持シートに対してより高い耐熱性が求められる場合には、基材フィルム3としては、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレートなどのポリエステルフィルム、ポリプロピレン、ポリメチルペンテンなどのポリオレフィンフィルム等が挙げられる。また、これらの架橋フィルムや放射線・放電等による改質フィルムも用いることができる。基材フィルムは上記フィルムの積層体であってもよい。
支持シート2は、少なくともその外周部に粘着部を有する。粘着部は、支持シート付フィルム状焼成材料100a、100bの外周部において、リングフレーム5を一時的に固定する機能を有し、所要の工程後にはリングフレーム5が剥離可能であることが好ましい。したがって、粘着剤層4には、弱粘着性のものを使用してもよいし、エネルギー線照射により粘着力が低下するエネルギー線硬化性のものを使用してもよい。再剥離性粘着剤層は、公知の種々の粘着剤(例えば、ゴム系、アクリル系、シリコーン系、ウレタン系、ポリビニルエーテル系などの汎用粘着剤、表面凹凸のある粘着剤、エネルギー線硬化型粘着剤、熱膨張成分含有粘着剤等)により形成できる。
支持シート付フィルム状焼成材料は、外周部に粘着部を有する支持シートの内周部にフィルム状焼成材料が剥離可能に仮着されてなる。図2で示した構成例では、支持シート付フィルム状焼成材料100aは、基材フィルム3と粘着剤層4とからなる支持シート2の内周部にフィルム状焼成材料1が剥離可能に積層され、支持シート2の外周部に粘着剤層4が露出している。この構成例では、支持シート2よりも小径のフィルム状焼成材料1が、支持シート2の粘着剤層4上に同心円状に剥離可能に積層されていることが好ましい。
ここで、「支持シート付フィルム状焼成材料の厚さ」とは、支持シート付フィルム状焼成材料全体の厚さを意味し、例えば、複数層からなる支持シート付フィルム状焼成材料の厚さとは、支持シート付フィルム状焼成材料を構成するすべての層の厚さを意味する。
前記支持シート付フィルム状焼成材料は、上述の各層を対応する位置関係となるように順次積層することで製造できる。
例えば、基材フィルム上に粘着剤層又はフィルム状焼成材料を積層する場合には、剥離フィルム上に、これを構成するための成分及び溶媒を含有する粘着剤組成物又は焼成材料組成物を塗工又は印刷し、必要に応じて乾燥させ溶媒を揮発させてフィルム状とすることで、剥離フィルム上に粘着剤層又はフィルム状焼成材料をあらかじめ形成しておき、この形成済みの粘着剤層又はフィルム状焼成材料の前記剥離フィルムと接触している側とは反対側の露出面を、基材フィルムの表面と貼り合わせればよい。このとき、粘着剤組成物又は焼成材料組成物は、剥離フィルムの剥離処理面に塗工又は印刷することが好ましい。剥離フィルムは、積層構造の形成後、必要に応じて取り除けばよい。粘着剤組成物又は焼成材料組成物における、これを構成するための各成分の含有量は各成分の合計で50〜99質量%、溶媒の含有量は1〜50質量%であってよい。
次に本発明に係る支持シート付フィルム状焼成材料の利用方法について、該焼成材料をチップ付基板の製造に適用した場合を例にとって説明する。
工程(2):フィルム状焼成材料と、支持シートとを剥離し、フィルム状焼成材料付チップを得る工程、
工程(3):基板の表面に、フィルム状焼成材料付チップを貼付する工程、
工程(4):フィルム状焼成材料を焼成し、チップと基板とを接合する工程。
半導体ウエハはシリコンウエハ及びシリコンカーバイドウエハであってもよく、またガリウム・砒素などの化合物半導体ウエハであってもよい。半導体ウエハの表面には、回路が形成されていてもよい。ウエハ表面への回路の形成はエッチング法、リフトオフ法などの従来汎用されている方法を含む様々な方法により行うことができる。次いで、半導体ウエハの回路面の反対面(裏面)を研削する。研削法は特に限定はされず、グラインダーなどを用いた公知の手段で研削してもよい。裏面研削時には、表面の回路を保護するために回路面に、表面保護シートと呼ばれる粘着シートを貼付する。裏面研削は、ウエハの回路面側(すなわち表面保護シート側)をチャックテーブル等により固定し、回路が形成されていない裏面側をグラインダーにより研削する。ウエハの研削後の厚さは特に限定はされないが、通常は20〜500μm程度である。その後、必要に応じ、裏面研削時に生じた破砕層を除去する。破砕層の除去は、ケミカルエッチングや、プラズマエッチングなどにより行われる。
なお、表面に回路が形成された半導体ウエハを個片化したもの(チップ)を特に、素子又は半導体素子ともいう。
次いでフィルム状焼成材料を焼成し、基板とチップとを焼結接合する。このとき、フィルム状焼成材料付チップのフィルム状焼成材料の露出面を、基板に貼付けておけば、フィルム状焼成材料を介してチップと前記基板とを焼結接合できる。
<焼成材料組成物の製造>
下記表1に示す種類の第1の金属粒子及び第2の金属粒子を合計で95質量部と、バインダー成分(2−エチルヘキシルメタクリレート重合体、質量平均分子量260,000、L−0818、日本合成化学社製、MEK希釈品、固形分58.4質量%、Tg:−10℃)を固形分換算で5質量部混合し、溶媒(ブチルカルビトール)で固形分濃度が75質量%になるまで希釈し、焼成材料組成物を得た。
第1の金属粒子と第2の金属粒子とは、第1の金属粒子/第2の金属粒子で表される質量比が表1に示す値となるように混合した。
なお、第1の金属粒子の粒子径はTEMで測定し、第2の金属粒子の粒子径はSEMで測定した。
片面に剥離処理を施したポリエチレンテレフタレート系フィルムである剥離フィルム(厚さ38μm、SP−PET381031、リンテック社製)の片面に、上記で得られた焼成材料組成物を塗工し、110℃10分間乾燥させることで、厚さ75μmのフィルム状焼成材料を得た。
焼成前のフィルム状焼成材料と、重量で約10倍量の有機溶媒とを混合した後にこれを第1の金属粒子及び第2の金属粒子が沈降するまで、約30分間、静置した。この上澄み液をシリンジで抜き取り、120℃10分間乾燥した後の残留物を回収することで、フィルム状焼成材料から第1の金属粒子及び第2の金属粒子を除いた成分を分取した。また上記シリンジで上澄み液を抜き取った後の第1の金属粒子及び第2の金属粒子が含まれる液に対して、再び、フィルム状焼成材料の約10倍量の有機溶媒を混合した後にこれを第1の金属粒子及び第2の金属粒子が沈降するまで、約30分間、静置し、上澄み液をシリンジで抜き取った。この有機溶媒の混合と静置および上澄み液の抜き取りを5回繰り返した後、残った液を120℃10分間乾燥した後、残留物を回収することで、第1の金属粒子及び第2の金属粒子を分取した。
上記で得られた焼成材料組成物及びフィルム状焼成材料について、下記項目を測定及び評価した。
焼成材料組成物及びフィルム状焼成材料を目視にて観察し、凝集物の有無を確認した。
焼成材料組成物及びフィルム状焼成材料のいずれにも凝集物が認められない場合を「○:分散状態良好」と判断した。焼成材料組成物及びフィルム状焼成材料の少なくとも一方に凝集物が認められた場合を「×:分散状態不良」と判断した。結果を表1に示す。
JIS K7130に準じて、定圧厚さ測定器(テクロック社製、製品名「PG−02」)を用いて測定した。
フィルム状焼成材料の焼成後の熱伝導率は、以下の方法により測定した。
上記で得られたフィルム状焼成材料を10mm×10mmにカットしたものを、焼成後の厚さが150μm前後となるよう複数枚積層し、積層体(1)を得た。得られた積層体(1)の両面に、厚さ100μm、面積20mm×20mmのアルミシートを貼付し、積層体(2)を得た。得られた積層体(2)を直径10mmの断面を持つ高さ5mmの円柱体形状の銅片と、直径5mmの断面を持つ高さ2mmの円柱体形状の銅片とで挟み、窒素雰囲気下で350℃、10MPaの条件にて3分間加圧焼成し、2枚のアルミシートで挟まれた焼成体を得た。次いで、焼成体から2枚のアルミシートを剥がし、熱伝導率測定用の試験片を得た。なお、焼成前のフィルム状焼成材料の積層後の厚さは、フィルム状焼成材料中の金属粒子の体積割合によりおおよそ決まり、150μmをフィルム状焼成材料中の金属粒子の体積割合で割った値が、焼成前のフィルム状焼成材料の積層後の厚さの目安となる。
次いで、熱伝導率測定装置(株式会社アイフェイズ製 製品名「アイフェイズ・モバイル1u」)を用いて、試験片の熱拡散率を測定し、その後、試験片の比熱と比重から試験片の熱伝導率を算出した。測定は複数回実施し、標準偏差が平均値の半分以下となるように、他の値に比べて大きく異なるものを除外したものの中から5点以上を選択し、それらの平均値をフィルム状焼成材料の焼成後の熱伝導率とした。結果を表1に示す。
フィルム状焼成材料の焼成後のせん断接着力は、以下の方法により測定した。
上記で得られたフィルム状焼成材料を10mm×10mmにカットし、これを直径10mmの断面を持つ高さ5mmの、円柱体形状の銅被着体の上面に貼付し、その上に直径5mmの断面を持つ高さ2mmの、円柱体形状の銅被着体を載せて、窒素雰囲気下で350℃、10MPaの条件にて3分間加圧焼成し、接合接着力測定用試験片を得た。常温で、この試験片の接着面に対して6mm/分の速度でせん断方向から力を加え、接着状態が破壊するときの強度を測定し、これをせん断接着力とした。結果を表1に示す。
2 支持シート
3 基材フィルム
4 粘着剤層
5 リングフレーム
10 第1の金属粒子
20 第2の金属粒子
30 バインダー成分
100a 支持シート付フィルム状焼成材料
100b 支持シート付フィルム状焼成材料
Claims (3)
- 第1の金属粒子、第2の金属粒子及びバインダー成分を含有するフィルム状焼成材料であって、
前記第1の金属粒子の平均粒子径が100nm以下であり、かつ最大粒子径が250nm以下であり、
前記第2の金属粒子の平均粒子径が1000〜7000nmであり、最小粒子径が250nm超であり、かつ最大粒子径が10000nm以下であり、
第1の金属粒子/第2の金属粒子で表される質量比が0.1以上である、フィルム状焼成材料。 - 請求項1に記載のフィルム状焼成材料と、前記フィルム状焼成材料の少なくとも一方の側に設けられた支持シートと、を備えた支持シート付フィルム状焼成材料。
- 前記支持シートが、基材フィルム上に粘着剤層が設けられたものであり、
前記粘着剤層上に、前記フィルム状焼成材料が設けられている、請求項2に記載の支持シート付フィルム状焼成材料。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000038608A (ja) * | 1998-07-24 | 2000-02-08 | Nichia Chem Ind Ltd | 希土類鉄窒素系磁性粉末及びその製造方法 |
JP2002016345A (ja) * | 2000-06-28 | 2002-01-18 | Hitachi Ltd | 導電性ペーストおよび導電性粉末組成物、グリーンシート、セラミック多層回路基板およびその製造方法 |
JP2010118280A (ja) * | 2008-11-14 | 2010-05-27 | Sumitomo Electric Ind Ltd | 導電性ペースト及びそれを用いた電磁波シールドフィルム、電磁波シールドフレキシブルプリント配線板 |
JP2013199686A (ja) * | 2012-03-26 | 2013-10-03 | Toho Titanium Co Ltd | 金属多孔体の製造方法 |
JP2015130417A (ja) * | 2014-01-08 | 2015-07-16 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
JP2016121329A (ja) * | 2014-12-24 | 2016-07-07 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP2016164864A (ja) * | 2015-02-27 | 2016-09-08 | 株式会社ノリタケカンパニーリミテド | Agペーストおよび当該Agペースト用のAg粉末 |
JP2017069558A (ja) * | 2015-09-30 | 2017-04-06 | 日東電工株式会社 | パワー半導体装置の製造方法 |
JP2017179551A (ja) * | 2016-03-31 | 2017-10-05 | 新日鉄住金化学株式会社 | ニッケル粒子、導電性ペースト、内部電極及び積層セラミックコンデンサ |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6830823B1 (en) * | 1997-02-24 | 2004-12-14 | Superior Micropowders Llc | Gold powders, methods for producing powders and devices fabricated from same |
JP4872663B2 (ja) * | 2006-12-28 | 2012-02-08 | 株式会社日立製作所 | 接合用材料及び接合方法 |
JP5387034B2 (ja) * | 2009-02-20 | 2014-01-15 | 大日本印刷株式会社 | 導電性基板 |
JP5416173B2 (ja) * | 2011-07-07 | 2014-02-12 | 中興通訊股▲ふん▼有限公司 | 周波数帯コピー方法、装置及びオーディオ復号化方法、システム |
CN104736483A (zh) * | 2012-10-29 | 2015-06-24 | 阿尔法金属公司 | 烧结粉末 |
JP5558547B2 (ja) | 2012-12-05 | 2014-07-23 | ニホンハンダ株式会社 | ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
TW201611198A (zh) * | 2014-04-11 | 2016-03-16 | 阿爾發金屬公司 | 低壓燒結粉末 |
JP6536581B2 (ja) * | 2014-07-22 | 2019-07-03 | 住友電気工業株式会社 | 金属微粒子分散液 |
JP6502950B2 (ja) * | 2014-09-02 | 2019-04-17 | 株式会社アライドマテリアル | 放熱部材、及び放熱部材の製造方法 |
KR101930197B1 (ko) | 2015-09-01 | 2018-12-17 | 린텍 가부시키가이샤 | 점착 시트 |
JP2017089000A (ja) * | 2015-11-10 | 2017-05-25 | 旭硝子株式会社 | 銅粒子およびその製造方法、導電膜形成用ペースト、ならびに物品 |
JP6864505B2 (ja) | 2016-06-24 | 2021-04-28 | 日東電工株式会社 | 加熱接合用シート及びダイシングテープ付き加熱接合用シート |
JP6539620B2 (ja) | 2016-08-22 | 2019-07-03 | 株式会社日立製作所 | 超音波撮像装置、および、超音波画像生成方法 |
JP7503383B2 (ja) * | 2017-11-13 | 2024-06-20 | 日東電工株式会社 | 焼結接合用組成物、焼結接合用シート、および焼結接合用シート付きダイシングテープ |
-
2019
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- 2019-02-08 EP EP19757242.3A patent/EP3756789A4/en active Pending
- 2019-02-08 WO PCT/JP2019/004650 patent/WO2019163568A1/ja unknown
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- 2019-02-08 CN CN201980014303.XA patent/CN111741823B/zh active Active
- 2019-02-19 TW TW108105427A patent/TWI818955B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000038608A (ja) * | 1998-07-24 | 2000-02-08 | Nichia Chem Ind Ltd | 希土類鉄窒素系磁性粉末及びその製造方法 |
JP2002016345A (ja) * | 2000-06-28 | 2002-01-18 | Hitachi Ltd | 導電性ペーストおよび導電性粉末組成物、グリーンシート、セラミック多層回路基板およびその製造方法 |
JP2010118280A (ja) * | 2008-11-14 | 2010-05-27 | Sumitomo Electric Ind Ltd | 導電性ペースト及びそれを用いた電磁波シールドフィルム、電磁波シールドフレキシブルプリント配線板 |
JP2013199686A (ja) * | 2012-03-26 | 2013-10-03 | Toho Titanium Co Ltd | 金属多孔体の製造方法 |
JP2015130417A (ja) * | 2014-01-08 | 2015-07-16 | 日東電工株式会社 | フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置 |
JP2016121329A (ja) * | 2014-12-24 | 2016-07-07 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP2016164864A (ja) * | 2015-02-27 | 2016-09-08 | 株式会社ノリタケカンパニーリミテド | Agペーストおよび当該Agペースト用のAg粉末 |
JP2017069558A (ja) * | 2015-09-30 | 2017-04-06 | 日東電工株式会社 | パワー半導体装置の製造方法 |
JP2017179551A (ja) * | 2016-03-31 | 2017-10-05 | 新日鉄住金化学株式会社 | ニッケル粒子、導電性ペースト、内部電極及び積層セラミックコンデンサ |
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