CN106449538A - Surface-mounting type rectifier structure - Google Patents

Surface-mounting type rectifier structure Download PDF

Info

Publication number
CN106449538A
CN106449538A CN201610636090.2A CN201610636090A CN106449538A CN 106449538 A CN106449538 A CN 106449538A CN 201610636090 A CN201610636090 A CN 201610636090A CN 106449538 A CN106449538 A CN 106449538A
Authority
CN
China
Prior art keywords
area
lead bar
pin area
pin
welding ends
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610636090.2A
Other languages
Chinese (zh)
Other versions
CN106449538B (en
Inventor
张雄杰
何洪运
程琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Good Ark Electronics Co Ltd
Original Assignee
Suzhou Good Ark Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Good Ark Electronics Co Ltd filed Critical Suzhou Good Ark Electronics Co Ltd
Priority to CN201610636090.2A priority Critical patent/CN106449538B/en
Publication of CN106449538A publication Critical patent/CN106449538A/en
Application granted granted Critical
Publication of CN106449538B publication Critical patent/CN106449538B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4007—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/4005—Shape
    • H01L2224/4009—Loop shape
    • H01L2224/40091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434—Bonding interfaces of the connector
    • H01L2224/84345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8438—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/84385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Motor Or Generator Current Collectors (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

The invention provides a surface-mounting type rectifier structure including a first lead wire, a second lead wire, a connecting piece and a diode chip that are arranged in an epoxy packaging body, the area between the support area of the first lead wire and a pin area is provided with a first folding part, so that the support area of the first lead wire is lower than the pin area, the area between the welding area of the second lead wire and the pin area is provided with a second folding part, so that the welding area of the second lead wire is lower than the pin area, a third bending part is arranged between the first welding end and the second welding end of the connecting piece to make the first welding end lower than the second welding end, the lower surface of the epoxy packaging body is provided with a protrusion part, the thickness of the pin area is greater than the thickness of the protrusion part, and a plurality of through holes are arranged between the third bending part and the second welding end. The diode device structure eliminates the possibility that the pin suspension is lower than the lower limit, so that the product yield rate loss caused by the exceeding of the suspension value over the lower limit and the product abnormality caused by missed judgment when the device is abnormal can be prevented.

Description

SMD rectifying device structure
Technical field
The present invention relates to a kind of diode component, more particularly, to a kind of SMD rectifying device structure.
Background technology
Existing rectifying device, its connection sheet structural semiconductor product is generally to connection sheet infinite place or using simple groove knot Structure is spacing, and its shortcoming is that connection sheet can only be done with the spacing of a direction, and spacing purpose is to avoid entering stove welding process Middle connection sheet off normal causes the junction point in connection sheet to deflect away from chip weld zone to lead to product electrical property failure.When device design requirement Need connection sheet is done higher precision spacing when, existing structure is unable to reach requirement, and spacing purpose is to avoid entering stove weldering In termination process, connection sheet off normal causes the junction point in connection sheet to deflect away from chip weld zone to lead to product electrical property failure.
Secondly, for ensureing the technology stability that stamp-mounting-paper diode product mounts in client rs PC B, product design typically requires The pin designing 0.05 ~ 0.2mm is vacantly spent.Traditional handicraft to ensure this hanging degree mainly by clubfoot reforming device mould；Again Secondary, when designing and developing connection sheet structural semiconductor product, the electric conductivity in order to lift high power device ensures relatively thin simultaneously Product thickness, generally connection sheet is designed as slab construction, when the area of slab construction big to a certain extent when, interiors of products Form large thin-wall structure.In molding process, easily injection pore in interiors of products, and these pores may result in product electricity Property or reliability failures therefore, how to research and develop a kind of be easy to position semiconductor package, can solve the above problems, become for The direction that those skilled in the art make great efforts.Therefore, how to research and develop a kind of SMD rectifying device structure, can solve the above problems, Become the direction made great efforts for those skilled in the art.
Content of the invention
It is an object of the present invention to provide a kind of SMD rectifying device structure, it is hanging that this diode device structure eliminates pin Degree is less than the probability of lower limit, thus avoiding the product yield loss that during unit exception, hanging number of degrees value ultra-specification lower limit causes And the product causing of failing to judge is abnormal；And avoid connection sheet off normal in entering stove welding process to cause the junction point in connection sheet to deflect away from Chip weld zone leads to produce the problem of pore in product electrical property failure and encapsulation injection, improves product electrically and reliability is big Improve greatly yield.
For reaching above-mentioned purpose, the technical solution used in the present invention is：A kind of SMD rectifying device structure, including being located at The first lead bar in epoxy packages body, the second lead bar, connection sheet and diode chip for backlight unit, this first lead bar one end is and two The Support that pole pipe chip connects, described diode chip for backlight unit one end is electrically connected with this Support by solder(ing) paste, the first lead bar The other end is pin area, and the pin area of this first lead bar is as the electric current transmission ends of described commutator；
Described second lead bar one end is the weld zone being connected with the first welding ends of described connection sheet, and this second lead bar is another Hold as pin area, the pin area of this second lead bar is as the electric current transmission ends of described commutator；
Described connection sheet second welding ends is electrically connected by solder(ing) paste with the diode chip for backlight unit other end；
Between the Support of described first lead bar and pin area, region is provided with one first bending part, so that the first lead bar Support be less than pin area；
Between the weld zone of described second lead bar and pin area, region is provided with one second bending part, so that the second lead bar Weld zone be less than pin area；
It is provided with the 3rd bending part, so that the first welding ends is low between first welding ends of described connection sheet and the second welding ends In the second welding ends；
Described epoxy packages body lower surface has a lobe, and the thickness of described pin area is more than the thickness of described lobe；
It is provided with several through holes between described 3rd bending part and the second welding ends；
The weld zone both sides of described second lead bar are provided with block.
In technique scheme, further improved scheme is as follows：
1., in such scheme, described second bending part and the second welding ends angle are 125 ° ~ 145 °.
2., in such scheme, the area of the weld zone of described second lead bar is more than the area of described first welding ends.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect：
The present invention SMD rectifying device structure, its epoxy packages body lower surface has a lobe, the thickness of described pin area More than the thickness of described lobe, that is, the coupling of pin thickness size and body locating dimension eliminates the hanging degree of pin and is less than down The probability of limit, thus avoid product yield that during unit exception, hanging number of degrees value ultra-specification lower limit causes loss and failing to judge make The product becoming is abnormal；Secondly, it avoids connection sheet off normal in entering stove welding process to cause the junction point in connection sheet to deflect away from core Piece weld zone leads to product electrical property failure, substantially increases；And the lifting of connection sheet limit accuracy makes the performance of chip be able to Give full play to, original large scale crystal grain can be substituted with reduced size crystal grain, reduce manufacturing cost further；Again, its second It is provided with several through holes, it is to avoid produce the problem of pore in encapsulation injection and welded in stove between bending part and weld zone Connection sheet off normal in journey, thus improve product electrically and reliability.
Brief description
Accompanying drawing 1 is the present invention SMD rectifying device structure partial schematic diagram；
Accompanying drawing 2 is the present invention looks up structural representation of accompanying drawing 1；
Accompanying drawing 3 is the present invention SMD rectifying device structural representation.
In the figures above：1st, the first lead bar；2nd, the second lead bar；3rd, connection sheet；31st, the first welding ends；32nd, the second weldering Connect end；4th, diode chip for backlight unit；5th, Support；61st, pin area；62nd, pin area；7th, weld zone；8th, block；9th, the first bending part； 10th, the second bending part；11st, the 3rd bending part；12nd, epoxy packages body；13rd, lobe；14th, through hole.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
Embodiment：A kind of SMD rectifying device structure, as shown in accompanying drawing 1 ~ 3, including first in epoxy packages body 12 Lead bar 1, the second lead bar 2, connection sheet 3 and diode chip for backlight unit 4, this first lead bar 1 one end is to be connected with diode chip for backlight unit 4 Support 5, described diode chip for backlight unit 4 one end electrically connected with this Support 5 by solder(ing) paste, and the first lead bar 1 other end is Pin area 61, the pin area 61 of this first lead bar 1 is as the electric current transmission ends of described commutator；
Described second lead bar 2 one end is the weld zone 7 being connected with the first welding ends 31 of described connection sheet 3, this second lead Bar 2 other end is pin area 62, and the pin area 62 of this second lead bar 2 is as the electric current transmission ends of described commutator；
Described connection sheet 3 second welding ends 32 is electrically connected by solder(ing) paste with diode chip for backlight unit 4 other end；
Between the Support 5 of described first lead bar 1 and pin area 61, region is provided with one first bending part 9, so that first The Support 5 of lead bar 1 is less than pin area 61；
Between the weld zone 7 of described second lead bar 2 and pin area 6, region is provided with one second bending part 10, so that second The weld zone 7 of lead bar 2 is less than pin area 62；
Weld zone 7 both sides of described second lead bar 2 are provided with block 8；Described epoxy packages body 12 lower surface has a lobe 13, the thickness C of described pin area 61,62 are more than the thickness A of described lobe；Locating dimension B, the thickness C of pin area 61,62, The thickness A of lobe meets below equation：C-B>During hanging degree lower specification limit, pin can be avoided completely vacantly to spend under ultra-specification Limit.
It is provided with the 3rd bending part 11 between first welding ends 31 of described connection sheet 3 and the second welding ends 32, so that First welding ends is less than the second welding ends.
It is provided with several through holes 14 between described 3rd bending part 11 and the second welding ends 32；
The area of the weld zone 7 of above-mentioned second lead bar 2 is more than the area of described first welding ends 31.
Above-mentioned second bending part 11 and the second welding ends 32 angle are 125 °.
During using above-mentioned SMD rectifying device structure, its epoxy packages body lower surface has a lobe, described pin The thickness in area is more than the thickness of described lobe, and that is, to eliminate pin hanging for the coupling of pin thickness size and body locating dimension Degree is less than the probability of lower limit, thus avoiding the product yield loss that during unit exception, hanging number of degrees value ultra-specification lower limit causes And the product causing of failing to judge is abnormal；Secondly, it avoids connection sheet off normal in entering stove welding process to cause the connection in connection sheet Point deflects away from chip weld zone and leads to product electrical property failure, substantially increases yield；And the lifting of connection sheet limit accuracy makes core The performance of piece is given full play to, and can substitute original large scale crystal grain with reduced size crystal grain, reduces manufacturing cost further； Again, it is provided with several through holes between its second bending part and weld zone, it is to avoid in encapsulation injection, produce the problem of pore With connection sheet off normal in stove welding process, thus improve product electrically and reliability.
Above-described embodiment only technology design to illustrate the invention and feature, its object is to allow person skilled in the art Scholar will appreciate that present disclosure and implements according to this, can not be limited the scope of the invention with this.All according to the present invention Equivalence changes or modification that spirit is made, all should be included within the scope of the present invention.

Claims (2)

1. a kind of SMD rectifying device structure, including positioned at epoxy packages body（12）The first interior lead bar（1）, the second lead Bar（2）, connection sheet（3）And diode chip for backlight unit（4）, this first lead bar（1）One end is and diode chip for backlight unit（4）The support connecting Area（5）, described diode chip for backlight unit（4）Solder(ing) paste and this Support are passed through in one end（5）Electrical connection, the first lead bar（1）The other end It is pin area（61）, this first lead bar（1）Pin area（61）Electric current transmission ends as described commutator；
Described second lead bar（2）One end is and described connection sheet（3）The first welding ends（31）The weld zone connecting（7）, should Second lead bar（2）The other end is pin area（62）, this second lead bar（2）Pin area（62）Electricity as described commutator Streaming end；
Described connection sheet（3）Second welding ends（32）With diode chip for backlight unit（4）The other end is electrically connected by solder(ing) paste；Its feature exists In：
Described first lead bar（1）Support（5）With pin area（61）Between region be provided with one first bending part（9）, thus Make the first lead bar（1）Support（5）Less than pin area（61）；
Described second lead bar（2）Weld zone（7）With pin area（62）Between region be provided with one second bending part（10）, thus Make the second lead bar（2）Weld zone（7）Less than pin area（62）；
Described connection sheet（3）The first welding ends（31）With the second welding ends（32）Between be provided with the 3rd bending part（11）, thus The first welding ends is made to be less than the second welding ends；
Described epoxy packages body（12）Lower surface has a lobe（13）, described pin area（61、62）Thickness be more than described The thickness of lobe；
Described 3rd bending part（11）With the second welding ends（32）Between be provided with several through holes（14）；
Described second lead bar（2）Weld zone（7）Both sides are provided with block（8）；Described second lead bar（2）Weld zone（7） Area be more than described first welding ends（31）Area.
2. diode device structure according to claim 1 it is characterised in that：Described second bending part（11）With the second weldering Connect end（32）Angle is 125 °.
CN201610636090.2A 2013-02-01 2013-02-01 Patch type rectifying device structure Active CN106449538B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610636090.2A CN106449538B (en) 2013-02-01 2013-02-01 Patch type rectifying device structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310039584.9A CN103117355B (en) 2013-02-01 2013-02-01 Patch type diode device structure
CN201610636090.2A CN106449538B (en) 2013-02-01 2013-02-01 Patch type rectifying device structure

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201310039584.9A Division CN103117355B (en) 2013-02-01 2013-02-01 Patch type diode device structure

Publications (2)

Publication Number Publication Date
CN106449538A true CN106449538A (en) 2017-02-22
CN106449538B CN106449538B (en) 2019-07-02

Family

ID=48415673

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201610636090.2A Active CN106449538B (en) 2013-02-01 2013-02-01 Patch type rectifying device structure
CN201310039584.9A Active CN103117355B (en) 2013-02-01 2013-02-01 Patch type diode device structure
CN201610637882.1A Active CN106449539B (en) 2013-02-01 2013-02-01 Preventing offsetting labeling type semiconductor device architecture
CN201610637959.5A Active CN106449540B (en) 2013-02-01 2013-02-01 Patch type rectification chip

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN201310039584.9A Active CN103117355B (en) 2013-02-01 2013-02-01 Patch type diode device structure
CN201610637882.1A Active CN106449539B (en) 2013-02-01 2013-02-01 Preventing offsetting labeling type semiconductor device architecture
CN201610637959.5A Active CN106449540B (en) 2013-02-01 2013-02-01 Patch type rectification chip

Country Status (1)

Country Link
CN (4) CN106449538B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103383932A (en) * 2013-07-12 2013-11-06 苏州固锝电子股份有限公司 Packaging structure for improving electrical performance of chip
CN106409804A (en) * 2013-07-12 2017-02-15 苏州固锝电子股份有限公司 High-reliability semiconductor device
CN106158766A (en) * 2016-08-03 2016-11-23 苏州市职业大学 Miniature attachment rectified semiconductor device
CN106158767A (en) * 2016-08-03 2016-11-23 苏州市职业大学 Miniature surface-adhered type diode component
CN106158802A (en) * 2016-08-03 2016-11-23 苏州市职业大学 Ultrathin surface-mount commutator
CN106158980A (en) * 2016-08-03 2016-11-23 苏州市职业大学 Miniature surface-adhered semiconductor rectifier device
CN106158779A (en) * 2016-08-03 2016-11-23 苏州市职业大学 Low-power consumption semiconductor rectifying device
CN205911308U (en) * 2016-08-05 2017-01-25 苏州固锝电子股份有限公司 Compact design type rectifier bridge structure
CN111584695A (en) * 2019-02-19 2020-08-25 江苏罗化新材料有限公司 Heat dissipation type chip-level LED packaging method and packaging structure thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
CN201812814U (en) * 2010-07-27 2011-04-27 苏州固锝电子股份有限公司 Rectifier for preventing diode chip from drifting
CN102263094A (en) * 2011-08-14 2011-11-30 绍兴旭昌科技企业有限公司 Non-interconnected multi-chip package diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080054420A1 (en) * 2006-08-23 2008-03-06 Semiconductor Components Industries, Llc. Semiconductor package structure and method of manufacture
CN101521188B (en) * 2009-04-07 2010-12-01 昆山东日半导体有限公司 Lead frame structure and surface sticking semiconductor packaging structure formed by same
CN101937898A (en) * 2010-08-12 2011-01-05 苏州固锝电子股份有限公司 Rectifier structure for moisture protection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4935803A (en) * 1988-09-09 1990-06-19 Motorola, Inc. Self-centering electrode for power devices
CN201812814U (en) * 2010-07-27 2011-04-27 苏州固锝电子股份有限公司 Rectifier for preventing diode chip from drifting
CN102263094A (en) * 2011-08-14 2011-11-30 绍兴旭昌科技企业有限公司 Non-interconnected multi-chip package diode

Also Published As

Publication number Publication date
CN103117355A (en) 2013-05-22
CN106449538B (en) 2019-07-02
CN103117355B (en) 2016-08-24
CN106449539A (en) 2017-02-22
CN106449540A (en) 2017-02-22
CN106449540B (en) 2019-07-02
CN106449539B (en) 2019-08-02

Similar Documents

Publication Publication Date Title
CN106449538A (en) Surface-mounting type rectifier structure
EP1986234A3 (en) Power semiconductor module for inverter circuit system
CN104617073B (en) Diode component for small-signal
CN203118937U (en) Semiconductor encapsulation structure convenient to position
CN203103299U (en) Highly reliable high-voltage diode for automobile igniter
CN103367040B (en) A kind of leading foot structure being convenient to the relay of whole machine installation
CN203118997U (en) Anti-offset diode device
CN110648991B (en) Adapter plate bonding structure for frame packaged chip and processing method thereof
CN203277225U (en) Relay lead-out pin structure facilitating whole-machine installation
TW201822322A (en) Flip-chip package rectification/protection diode element with multiple chip stacks capable of reducing the height of diode element and extending the number of flip-chips based on voltage resistance requirements
CN203038916U (en) TO220 packaging lead frame
CN203118934U (en) Paster type diode device
CN204441274U (en) There is the diode component of Novel connection contact pin
CN205248261U (en) A package lead for microwave device table pastes and encapsulates and connection structure thereof
CN209461455U (en) Tandem diode package structure
CN102832205B (en) In-line small bridge rectifier
CN203746833U (en) Signal lead for welding used in power semiconductor package
CN203659846U (en) Lead frame and packaging body
CN102637611A (en) Preparation method of AAP power module
CN204088296U (en) The copper film dancing that a kind of chip electrode is drawn
CN213878074U (en) Substrate for lead bonding process
CN108598179B (en) Large current rectifying chip for electronic product
CN201188424Y (en) Novel output type coupler for light-sensitive thyristor
CN203367264U (en) QFN-packaging tube casing provided with conductive ring and electronic device
CN203118996U (en) Diode structure having offset-proof function

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant