CN106409804A - High-reliability semiconductor device - Google Patents
High-reliability semiconductor device Download PDFInfo
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- CN106409804A CN106409804A CN201610137682.XA CN201610137682A CN106409804A CN 106409804 A CN106409804 A CN 106409804A CN 201610137682 A CN201610137682 A CN 201610137682A CN 106409804 A CN106409804 A CN 106409804A
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- solder side
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- bending part
- mesozone
- connection sheet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/3701—Shape
- H01L2224/37011—Shape comprising apertures or cavities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/3701—Shape
- H01L2224/37012—Cross-sectional shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/404—Connecting portions
- H01L2224/40475—Connecting portions connected to auxiliary connecting means on the bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
The invention provides a high-reliability semiconductor device. The semiconductor device is arranged in the welding area at one end of a second lead wire and is welded to the first welding surface of a connecting piece, the other end of the second lead wire is taken as the pin area for device current transmission, the second welding surface of the connecting piece is electrically connected with the upper surface of a rectification chip through a solder paste, a plurality of through holes are uniformly distributed in the second welding surface, a second through hole is arranged in a second bending part, the second welding surface, and a middle area, the second through hole spans the second bending part and extends to the second welding surface and the edge area of the middle area, the first welding surface of the connecting piece is lower than the second welding surface, and a first bending part and the second bending part form an included angle of 130 degrees with the middle area. The high-reliability semiconductor device prevents the product failure and short circuit due to the overflow of the large amount of solder out of the weldable area, thereby improving the product electric property and reliability and greatly improving the yield rate.
Description
Technical field
The present invention relates to a kind of semiconductor packing device, more particularly, to a kind of high reliability semiconductor device.
Background technology
Commutator is to carry out rectification using the unilateal conduction characteristic of diode to alternating current, therefore is widely used in alternating current and is converted in galvanic circuit.
When designing and developing connection sheet structural semiconductor product, in order to lift the electric conductivity of high power device chip surface and the crucial electrical characteristics of boost device, need connection sheet and the area design of die-bonded portion is sufficiently large.Connection sheet is welded together by solder with chip upper surface.It is limited to the coupling of connection sheet-chip welding region and chip upper surface area, the control of solder consumption becomes key process parameter.Solder is on the low side to lead to device electrical characteristics bad, and solder excessively can lead to shorted devices or Early reliability to lose efficacy.Prior art often there is prolongation over time it may appear that various electrical property declines.Therefore, how to research and develop a kind of rectification chip encapsulating structure, can solve the above problems, become the direction made great efforts for those skilled in the art.
Content of the invention
It is an object of the present invention to provide a kind of high reliability semiconductor device, this high reliability semiconductor device can absorb unnecessary solder with self adaptation, both ensure that welding region sprawled the solder of enough area, turn avoid because amount of solder more and overflow solderable area and cause product failure, improve product electrically, reliability and yield.
For reaching above-mentioned purpose, the technical solution used in the present invention is：A kind of high reliability semiconductor device, including the first lead bar in epoxy packages body, the second lead bar, connection sheet and rectification chip, the Support of this first lead bar one end is connected to described rectification chip lower surface, this rectification chip lower surface is electrically connected with the Support of this first lead bar by solder(ing) paste, the pin area that the first lead bar other end transmits as device current；
Weld zone positioned at described second lead bar one end is connected with the first solder side of connection sheet, the pin area that this second lead bar other end transmits as device current；Described connection sheet second solder side is electrically connected by solder(ing) paste with rectification chip upper surface；
Between first solder side of described connection sheet and the second solder side, there is a mesozone, it is respectively equipped with the first bending part and the second bending part between this mesozone and the first solder side and the second solder side, so that mesozone height is higher than the first solder side and the second solder side, the both sides end face that the second solder side of described connection sheet is relative is respectively provided with strip breach；Described second solder side is evenly distributed with several first through holes, and on the second bending part, the second solder side, mesozone, this second through hole across the second bending part and extends to the second solder side, mesozone marginal area to one second through hole；First solder side height of described connection sheet is less than described second solder side height, and described first bending part, the second bending part and mesozone angle are 130 °.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect：
1. high reliability semiconductor device of the present invention, between first solder side of its connection sheet and the second solder side, there is a mesozone, it is respectively equipped with the first bending part and the second bending part between this mesozone and the first solder side and the second solder side, so that mesozone height is higher than the first solder side and the second solder side, the both sides end face that second solder side of described connection sheet is relative is respectively provided with strip breach, in the case of ensureing not reducing contact area and increase resistance, unnecessary solder can be absorbed with self adaptation, thus preventing solder from entering non-solder area, both ensure that welding region sprawled the solder of enough area, turn avoid because amount of solder more and overflow solderable area and cause product failure, short circuit, improve product electrically and reliability substantially increases yield.
2. high reliability semiconductor device of the present invention, between first solder side of its connection sheet and the second solder side, there is a mesozone, it is respectively equipped with the first bending part and the second bending part between this mesozone and the first solder side and the second solder side, so that mesozone height is higher than the first solder side and the second solder side, the both sides end face that the second solder side of described connection sheet is relative is respectively provided with strip breach；Described second solder side is evenly distributed with several first through holes；Both can prevent solder from entering non-solder area, avoid because amount of solder more and overflow solderable area and cause product failure, short circuit, improve product electrically and reliability substantially increases yield, second solder side is evenly distributed with the solder that several first through holes are overflowed due to first through hole covering, prevent solder from overflowing at solder side edge, make use of the lateral area of first through hole in connection sheet, reduce contact resistance and response time, reduce power consumption, also strengthen the bonding strength of connection sheet and rectification chip.
3. high reliability semiconductor device of the present invention, the both sides end face that the second solder side of its connection sheet is relative is respectively provided with strip breach；Described second solder side is evenly distributed with several first through holes, and on the second bending part, the second solder side, mesozone, this second through hole across the second bending part and extends to the second solder side, mesozone marginal area to one second through hole；Prevent solder from entering non-solder area further, avoid because amount of solder more and overflow solderable area and cause product failure, short circuit, improve product electrically and reliability substantially increases yield, second solder side is evenly distributed with the solder that several first through holes are overflowed due to through hole covering, prevent solder from overflowing at solder side edge, reduce contact resistance and response time, reduce power consumption.
Brief description
Accompanying drawing 1 is prior art encapsulating structure schematic diagram one；
Accompanying drawing 2 is prior art encapsulating structure schematic diagram two；
Accompanying drawing 3 is high reliability semiconductor device structural representation of the present invention；
Accompanying drawing 4 is A-A cross-sectional view in accompanying drawing 3；
Accompanying drawing 5 is high reliability semiconductor device partial structural diagram of the present invention.
In the figures above：1st, the first lead bar；11st, Support；2nd, the second lead bar；21st, weld zone；3rd, connection sheet；31st, the first solder side；32nd, the second solder side；33rd, mesozone；34th, the first bending part；35th, the second bending part；4th, rectification chip；5th, pin area；6th, strip breach；7th, first through hole；8th, solder；9th, the second through hole.
Specific embodiment
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
Embodiment：A kind of high reliability semiconductor device, including the first lead bar 1 in epoxy packages body, the second lead bar 2, connection sheet 3 and rectification chip 4, the Support 11 of this first lead bar 1 one end is connected to described rectification chip 4 lower surface, this rectification chip 4 lower surface is electrically connected with the Support 11 of this first lead bar 1 by solder(ing) paste, the pin area 5 that the first lead bar 1 other end transmits as device current；
It is connected with the first solder side 31 of connection sheet 3 positioned at the weld zone 21 of described second lead bar 2 one end, the pin area 5 that this second lead bar 2 other end transmits as device current；Described connection sheet 3 second solder side 32 is electrically connected by solder(ing) paste with rectification chip 4 upper surface；
Between first solder side 31 of described connection sheet 3 and the second solder side 32, there is a mesozone 33, it is respectively equipped with the first bending part 34 and the second bending part 35 between this mesozone 33 and the first solder side 31 and the second solder side 32, so that mesozone 33 height is higher than the first solder side 31 and the second solder side 32, the both sides end face that the second solder side of described connection sheet 3 is relative is respectively provided with strip breach 6；Described second solder side 32 is evenly distributed with several first through holes 7, on the second bending part 35, the second solder side 32, mesozone 33, this second through hole 9 across the second bending part 35 and extends to the second solder side 32, mesozone 33 marginal area to one second through hole 9.
First solder side 31 height of above-mentioned connection sheet 3 is less than described second solder side 32 height.
Above-mentioned first bending part 34, the second bending part 35 are 130 ° with mesozone 33 angle.
During using above-mentioned high reliability semiconductor device, between first solder side of its connection sheet and the second solder side, there is a mesozone, it is respectively equipped with the first bending part and the second bending part between this mesozone and the first solder side and the second solder side, so that mesozone height is higher than the first solder side and the second solder side, the both sides end face that second solder side of described connection sheet is relative is respectively provided with strip breach, in the case of ensureing not reducing contact area and increase resistance, unnecessary solder can be absorbed with self adaptation, thus preventing solder 8 from entering non-solder area, both ensure that welding region sprawled the solder 8 of enough area, turn avoid because solder 8 amount more and overflow solderable area and cause product failure, short circuit, improve product electrically and reliability substantially increases yield；Secondly, between first solder side of its connection sheet and the second solder side, there is a mesozone, it is respectively equipped with the first bending part and the second bending part between this mesozone and the first solder side and the second solder side, so that mesozone height is higher than the first solder side and the second solder side, the both sides end face that the second solder side of described connection sheet is relative is respectively provided with strip breach；Described second solder side is evenly distributed with several first through holes, prevent solder 8 from overflowing at solder side edge, make use of the lateral area of first through hole in connection sheet, reduce contact resistance and response time, reduce power consumption, also strengthen the bonding strength of connection sheet and rectification chip.
Above-described embodiment only technology design to illustrate the invention and feature, be its object is to allow person skilled in the art will appreciate that present disclosure and to implement according to this, can not be limited the scope of the invention with this.All equivalence changes made according to spirit of the invention or modification, all should be included within the scope of the present invention.
Claims (1)
1. a kind of high reliability semiconductor device, including the first lead bar in epoxy packages body（1）, the second lead bar（2）, connection sheet（3）And rectification chip（4）, this first lead bar（1）The Support of one end（11）It is connected to described rectification chip（4）Lower surface, this rectification chip（4）Lower surface passes through solder(ing) paste and this first lead bar（1）Support（11）Electrical connection, the first lead bar（1）The pin area that the other end transmits as device current（5）；
Positioned at described second lead bar（2）The weld zone of one end（21）With connection sheet（3）The first solder side（31）Connect, this second lead bar（2）The pin area that the other end transmits as device current（5）；Described connection sheet（3）Second solder side（32）With rectification chip（4）Upper surface is electrically connected by solder(ing) paste；
It is characterized in that：Described connection sheet（3）The first solder side（31）With the second solder side（32）Between there is a mesozone（33）, this mesozone（33）With the first solder side（31）With the second solder side（32）Between be respectively equipped with the first bending part（34）With the second bending part（35）, so that mesozone（33）It is higher than highly the first solder side（31）With the second solder side（32）, described connection sheet（3）The relative both sides end face of the second solder side be respectively provided with strip breach（6）；Described second solder side（32）It is evenly distributed with several first through holes（7）, one second through hole（9）Positioned at the second bending part（35）, the second solder side（32）, mesozone（33）On, this second through hole（9）Across the second bending part（35）And extend to the second solder side（32）, mesozone（33）Marginal area；Described first bending part（34）, the second bending part（35）With mesozone（33）Angle is 125 ° ~ 145 °；
Described first bending part（34）, the second bending part（35）With mesozone（33）Angle is 130 °；Described connection sheet（3）The first solder side（31）Highly it is less than described second solder side（32）Highly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610137682.XA CN106409804A (en) | 2013-07-12 | 2013-07-12 | High-reliability semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610137682.XA CN106409804A (en) | 2013-07-12 | 2013-07-12 | High-reliability semiconductor device |
| CN201310293355.XA CN103383929B (en) | 2013-07-12 | 2013-07-12 | High reliability rectifying device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310293355.XA Division CN103383929B (en) | 2013-07-12 | 2013-07-12 | High reliability rectifying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106409804A true CN106409804A (en) | 2017-02-15 |
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Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310293355.XA Active CN103383929B (en) | 2013-07-12 | 2013-07-12 | High reliability rectifying device |
| CN201610137667.5A Pending CN105826290A (en) | 2013-07-12 | 2013-07-12 | Low-power-consumption semiconductor rectifier device |
| CN201610137682.XA Pending CN106409804A (en) | 2013-07-12 | 2013-07-12 | High-reliability semiconductor device |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310293355.XA Active CN103383929B (en) | 2013-07-12 | 2013-07-12 | High reliability rectifying device |
| CN201610137667.5A Pending CN105826290A (en) | 2013-07-12 | 2013-07-12 | Low-power-consumption semiconductor rectifier device |
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| Country | Link |
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| CN (3) | CN103383929B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364503A (en) * | 2019-07-25 | 2019-10-22 | 珠海格力电器股份有限公司 | The novel no lead patch encapsulating structure of one kind and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380702A (en) * | 2001-04-09 | 2002-11-20 | 株式会社东芝 | Luminescent device |
| US20100123240A1 (en) * | 2008-11-18 | 2010-05-20 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
| CN102738087A (en) * | 2011-03-31 | 2012-10-17 | 瑞鼎科技股份有限公司 | wafer wiring structure |
| CN103117355A (en) * | 2013-02-01 | 2013-05-22 | 苏州固锝电子股份有限公司 | Patch type diode device structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8482134B1 (en) * | 2010-11-01 | 2013-07-09 | Amkor Technology, Inc. | Stackable package and method |
| CN203367266U (en) * | 2013-07-12 | 2013-12-25 | 苏州固锝电子股份有限公司 | Encapsulation structure for buffering chip surface solder dosage |
-
2013
- 2013-07-12 CN CN201310293355.XA patent/CN103383929B/en active Active
- 2013-07-12 CN CN201610137667.5A patent/CN105826290A/en active Pending
- 2013-07-12 CN CN201610137682.XA patent/CN106409804A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1380702A (en) * | 2001-04-09 | 2002-11-20 | 株式会社东芝 | Luminescent device |
| US20100123240A1 (en) * | 2008-11-18 | 2010-05-20 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
| CN102738087A (en) * | 2011-03-31 | 2012-10-17 | 瑞鼎科技股份有限公司 | wafer wiring structure |
| CN103117355A (en) * | 2013-02-01 | 2013-05-22 | 苏州固锝电子股份有限公司 | Patch type diode device structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364503A (en) * | 2019-07-25 | 2019-10-22 | 珠海格力电器股份有限公司 | The novel no lead patch encapsulating structure of one kind and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103383929B (en) | 2016-07-06 |
| CN105826290A (en) | 2016-08-03 |
| CN103383929A (en) | 2013-11-06 |
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