CN205388970U - Semiconductor connection structure and including this semiconductor connection structure's semiconductor device - Google Patents
Semiconductor connection structure and including this semiconductor connection structure's semiconductor device Download PDFInfo
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- CN205388970U CN205388970U CN201620193860.6U CN201620193860U CN205388970U CN 205388970 U CN205388970 U CN 205388970U CN 201620193860 U CN201620193860 U CN 201620193860U CN 205388970 U CN205388970 U CN 205388970U
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- lead frame
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Abstract
The utility model provides a semiconductor connection structure and including this semiconductor connection structure's semiconductor device, wherein, the semiconductor connection structure include: base plate, one of which are formed with the electricity on the surface and connect the figure, the lead frame, its with the figure laminating is connected to the electricity of base plate, just the pin of lead frame with the figure welding is connected together to the electricity, the corner of lead frame is designed for the fillet. Compared with the prior art, the utility model discloses change the corner of lead frame into the fillet design to reduce with the burr of man -hour in the edge production of lead frame, thus the joint strength after reinforcing lead frame and the base plate welding together, and then promoted follow -uply indirectly and the bonded welding strength chip.
Description
[technical field]
This utility model relates to technical field of semiconductors, particularly to a kind of semiconductor connection structure and the semiconductor device including this semiconductor connection structure.
[background technology]
Part SPM is due to process characteristic, need lead frame and DBC (DirectBondingCopper, cover copper ceramic substrate) it is fixed, chip soldering is connected on DBC by rear extended meeting, bonding wire is beaten on chip and lead frame pin, if lead frame is high with the fixing insufficient strength of DBC in the process, during bonding routing, DBC or lead frame have floating, it is easy to cause the problems such as bonding weld strength is inadequate.If it addition, lead frame is unreasonable with DBC connected mode, the intensity of product proof voltage also can be affected.
Therefore, it is necessary to provide the technical scheme of a kind of improvement to solve the problems referred to above.
[utility model content]
The purpose of this utility model is in that provide a kind of semiconductor connection structure and include the semiconductor device of this semiconductor connection structure, in this attachment structure, fixing intensity (or bonding strength) between lead frame and substrate is higher, follow-up is bonded weld strength with chip thus indirectly promoting.
In order to solve the problems referred to above, according to an aspect of the present utility model, this utility model provides a kind of semiconductor connection structure, comprising: substrate, surface thereof is formed with electrical connection figure；Lead frame, its electrical connection figure with described substrate is fitted, and the pin of described lead frame welds together with the described figure that electrically connects, and the corner of described lead frame is fillet design.
Further, the edge of described electrical connection figure is fillet design.
Further, the corner of described lead frame includes end and the turning of lead frame；The corner of described electrical connection figure includes end and the turning of electrical connection figure.
Further, described substrate is for covering copper ceramic substrate.
Further, the electrical connection figure of described substrate includes the first welding disk, the pin of described lead frame includes the connecting portion that the other parts with lead frame are connected and the second welding disk welded mutually with the first welding disk of the electrical connection figure of described substrate, and the length summation of the second welding disk of row's pin of described lead frame is equal to the 1/2 to 4/5 of the length of side of the electrical connection figure fitted with this row's pin.
According to another aspect of the present utility model, this utility model provides a kind of semiconductor device, and it includes semiconductor connection structure and is bonded, with this semiconductor connection structure, the chip being connected.Described semiconductor connection structure includes: substrate, and surface thereof is formed electrical connection figure；Lead frame, its electrical connection figure with described substrate is fitted, and the pin of described lead frame welds together with the described figure that electrically connects, and the corner of described lead frame is fillet design.
Compared with prior art, this utility model changes the corner of lead frame into fillet design, add, to reduce, the burr produced man-hour at the edge of lead frame, thus strengthen lead frame and substrate weld together after bonding strength, and then indirectly improve and follow-up be bonded weld strength with chip.
[accompanying drawing explanation]
In order to be illustrated more clearly that the technical scheme of this utility model embodiment, below the accompanying drawing used required during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.Wherein:
Fig. 1 (a) is the top view of a kind of lead frame of the prior art；
Fig. 1 (b) is the top view of a kind of DBC of the prior art；
Fig. 1 (c) is the top view after the lead frame shown in Fig. 1 (a) and the laminating welding of the BDC as shown in Fig. 1 (b)；
The enlarged diagram of the part pin that Fig. 2 (a) is the lead frame shown in Fig. 1 (a)；
The enlarged schematic partial view of the electrical connection figure that Fig. 2 (b) is the DBC in Fig. 1 (b)；
Fig. 2 (c) is the enlarged diagram of the part welding region in Fig. 1 (c)；
Fig. 3 (a) is the top view of this utility model lead frame in one embodiment；
Fig. 3 (b) is the top view of this utility model substrate in one embodiment；
Fig. 3 (c) is the top view of this utility model semiconductor connection structure in one embodiment；
The enlarged diagram of the part pin that Fig. 4 (a) is the lead frame shown in Fig. 3 (a)；
The enlarged schematic partial view of the electrical connection figure that Fig. 4 (b) is the substrate in Fig. 3 (b)；
Fig. 4 (c) is the enlarged diagram of the part welding region in the semiconductor connection structure shown in Fig. 3 (c).
[detailed description of the invention]
Understandable for enabling above-mentioned purpose of the present utility model, feature and advantage to become apparent from, below in conjunction with the drawings and specific embodiments, this utility model is described in further detail.
" embodiment " or " embodiment " referred to herein refers to the special characteristic, structure or the characteristic that may be included at least one implementation of this utility model.Different local in this manual " in one embodiment " occurred not refer both to same embodiment, neither be independent or selective and that other embodiments are mutually exclusive embodiment.Unless stated otherwise, connection herein, be connected, connect represent that the word being electrically connected all represents and be directly or indirectly electrical connected.
In order to promote the bonding strength between lead frame and DBC, after lead frame in prior art and DBC laminating is welded by inventor, the not high reason of firmness has carried out probing into as follows.
The connection of current leadframe and DBC is by print solder paste on the electrical connection figure of DBC, is then fitted by the electrical connection figure of lead frame with DBC, crosses reflow ovens, thus by the pin of lead frame and DBC firm welding.Refer to described in Fig. 1 (a), it is the top view of a kind of lead frame of the prior art；Refer to shown in Fig. 1 (b), it is the top view of a kind of DBC of the prior art, and a surface of this DBC is formed electrical connection figure 210；Refer to described in Fig. 1 (c), it is the top view after the such as lead frame 100 shown in Fig. 1 (a) and the laminating welding of the BDC200 as shown in Fig. 1 (b), and dash area therein is the welding region of lead frame 100 and the electrical connection figure of DBC200.
In designing at existing lead frame and DBC, the end of the electrical connection figure of lead frame and DBC and corner are all based on right angle, and the precision owing to being processed by lead frame is limited, cause that lead frame sharp corner at pin end or turning can produce a small amount of burr (i.e. wedge angle burr) adding man-hour.Existence due to pin end or turning burr so that the laminating of lead frame and DBC is not very tight, and DBC likely produces after welding, when causing follow-up bonding routing, DBC or lead frame have floating, it is easy to cause the problems such as bonding weld strength is inadequate.It addition, wedge angle and burr produce discharge scenario when by high voltage, go wrong thus causing that product is high pressure resistant.
Refer to shown in Fig. 2 (a), the enlarged diagram of its part pin being the lead frame shown in Fig. 1 (a), pin end and corner in this figure are right angle；Refer to shown in Fig. 2 (b), it is the enlarged schematic partial view electrically connecting figure of the DBC in Fig. 1 (b), and end and the corner of the electrical connection figure shown in this figure are right angle；Refer to shown in Fig. 2 (c), it is the enlarged diagram of part welding region in Fig. 1 (c).
In view of above-mentioned analysis, the electrical connection figure of the lead frame in existing power model and DBC has been improved by inventor.
Refer to shown in Fig. 3 (a), it is the top view of this utility model lead frame 300 in one embodiment, the corner of the lead frame 300 in Fig. 3 (a) is (such as, the end 321 of lead frame and turning 322) all adopt fillet design, thus effectively reducing the wedge angle burr situation of the edge of lead frame.Refer to shown in Fig. 4 (a), the enlarged diagram of its part pin 310 being the lead frame shown in Fig. 3 (a), in this figure, the end 321 of the pin 310 of lead frame 300 and turning 322 place are fillet design.
Refer to shown in Fig. 3 (b), it is the top view of this utility model substrate 400 in one embodiment, and a surface of this substrate 400 is formed electrical connection figure 410；The corner (such as, electrically connect end 421 and the turning 422 of figure 410) of the electrical connection figure 410 of the substrate 400 in Fig. 3 (b) also all adopts fillet design, thus discharging when preventing some wedge angle high pressure.Refer to shown in Fig. 4 (b), it is the enlarged schematic partial view electrically connecting figure 410 of the substrate 400 in Fig. 3 (b), and end 421 and turning 422 place of the electrical connection figure 410 shown in this figure are fillet.
Shown in Fig. 3 (c), it is the top view of this utility model semiconductor connection structure 500 in one embodiment, semiconductor connection structure 500 shown in Fig. 3 (c) includes the lead frame 300 as shown in Fig. 3 (a) and the substrate as shown in Fig. 3 (b) 400, the electrical connection figure 410 of wherein said lead frame 300 and described substrate 400 fits, and the pin 310 of described lead frame 300 welds together with the described figure 410 that electrically connects.The welding region of the pin that dash area 510 is lead frame 300 in Fig. 3 (c) 310 and the electrical connection figure 410 of substrate 400.Refer to shown in Fig. 4 (c), it is the enlarged diagram of the part welding region in the semiconductor connection structure 500 shown in Fig. 3 (c).
Owing to end 321 and the position, turning 322 of the lead frame 300 in the semiconductor connection structure shown in Fig. 3 (c) all adopt fillet, it is effectively reduced the wedge angle burr situation of the edge of lead frame 300.This is possible not only to promote the bonding strength between lead frame 300 and substrate 400, but also can reduce the irregular problem of substrate after the welding caused due to wedge angle burr, follow-up is bonded weld strength with chip thus indirectly improving；Additionally, also solve the electrion hidden danger that wedge angle burr causes, improve the pressure performance of product.
Further, since the end 421 of the electrical connection figure 410 of substrate 400 in the semiconductor connection structure 500 shown in Fig. 3 (c) and position, turning 422 also all adopt fillet.Therefore, it can get rid of the possibility of substrate 400 corner electric discharge, thus improving product high voltage performance further.In one embodiment, described substrate 400 is DBC.
It should be strongly noted that in order to increase the weld strength of lead frame 300 and substrate 400 in the semiconductor connection structure in this utility model, this utility model increases the welding disk length of the L-type pin of lead frame 300.Specifically refer to Fig. 4 (a), Fig. 4 (b), shown in Fig. 4 (c), the electrical connection figure 410 of described substrate 400 includes the first welding disk 412, described L-type pin 310 includes the connecting portion 314 being connected with the other parts of lead frame 300 and the second welding disk 312 being connected with the electrical connection figure of described substrate, the length of described second welding disk 312 is increased, the fitting area (dash area 510 as shown in Fig. 4 (c)) of the first welding disk 412 to increase this second welding disk 312 and electrically connect figure 410, thus increasing lead frame 300 and the weld strength of substrate 400.The length summation of the second welding disk 312 of one row's pin 310 of described lead frame 300 is equal to the 1/2 to 4/5 of the length of side of the electrical connection figure 410 fitted with this row's pin 310.In other examples, described pin 310 can also its I type or other shapes, no matter what described shape is, described pin 310 may each comprise connecting portion 314 and the second welding disk 312.
According to another invention of the present utility model, this utility model provides a kind of semiconductor device, and this semiconductor device includes the semiconductor connection structure as shown in Fig. 3 (c), and what is bonded, with this semiconductor connection structure, the chip being connected.
In this utility model, " connection ", be connected, word that " company ", the expression such as " connecing " are electrical connected, if no special instructions, then it represents that direct or indirect electric connection.
It is pointed out that any change that detailed description of the invention of the present utility model done by one skilled in the art scope all without departing from claims of the present utility model.Correspondingly, scope of the claims of the present utility model is also not limited only to previous embodiment.
Claims (6)
1. a semiconductor connection structure, it is characterised in that comprising:
Substrate, surface thereof is formed electrical connection figure；
Lead frame, its electrical connection figure with described substrate is fitted, and the pin of described lead frame welds together with the described figure that electrically connects,
The corner of described lead frame is fillet design.
2. semiconductor connection structure according to claim 1, it is characterised in that
The edge of described electrical connection figure is fillet design.
3. semiconductor connection structure according to claim 2, it is characterised in that
The corner of described lead frame includes end and the turning of lead frame；
The corner of described electrical connection figure includes end and the turning of electrical connection figure.
4. semiconductor connection structure according to claim 1, it is characterised in that
Described substrate is for covering copper ceramic substrate.
5. semiconductor connection structure according to claim 1, it is characterised in that
The electrical connection figure of described substrate includes the first welding disk, the pin of described lead frame includes the connecting portion that the other parts with lead frame are connected and the second welding disk welded mutually with the first welding disk of the electrical connection figure of described substrate, and the length summation of the second welding disk of row's pin of described lead frame is equal to the 1/2 to 4/5 of the length of side of the electrical connection figure fitted with this row's pin.
6. a semiconductor device, it is characterised in that it include as arbitrary in claim 1-5 as described in semiconductor connection structure and be bonded, with this semiconductor connection structure, the chip that is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620193860.6U CN205388970U (en) | 2016-03-14 | 2016-03-14 | Semiconductor connection structure and including this semiconductor connection structure's semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620193860.6U CN205388970U (en) | 2016-03-14 | 2016-03-14 | Semiconductor connection structure and including this semiconductor connection structure's semiconductor device |
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| CN205388970U true CN205388970U (en) | 2016-07-20 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599377A (en) * | 2018-11-30 | 2019-04-09 | 珠海格力电器股份有限公司 | Power module and its packaging method |
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- 2016-03-14 CN CN201620193860.6U patent/CN205388970U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109599377A (en) * | 2018-11-30 | 2019-04-09 | 珠海格力电器股份有限公司 | Power module and its packaging method |
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