CN104882427B - A kind of plastic sealed IPM modular electricals attachment structure - Google Patents

A kind of plastic sealed IPM modular electricals attachment structure Download PDF

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Publication number
CN104882427B
CN104882427B CN201410069246.4A CN201410069246A CN104882427B CN 104882427 B CN104882427 B CN 104882427B CN 201410069246 A CN201410069246 A CN 201410069246A CN 104882427 B CN104882427 B CN 104882427B
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China
Prior art keywords
chip
conductive film
lead frame
plastic sealed
attachment structure
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CN201410069246.4A
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CN104882427A (en
Inventor
吴磊
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Xi'an Zhongche Yongji Electric Co Ltd
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Xian Yongdian Electric Co Ltd
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Priority to CN201410069246.4A priority Critical patent/CN104882427B/en
Priority to PCT/CN2014/082895 priority patent/WO2015127753A1/en
Publication of CN104882427A publication Critical patent/CN104882427A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Abstract

The invention discloses a kind of plastic sealed IPM modular electricals attachment structure, the structure saves lead frame as the structure of carrier part, optimizes the design of lead frame by using carrier of the conductive film as chip.Power chip and driving chip are arranged to the sustained height on conductive film simultaneously, the distance of chip chamber is effectively reduced, is easy to the electrical connection of conductive film and chip chamber.Chip is pasted on conductive film by using silver paste, the welding of chip and the processing step of wire bonding is eliminated, the production efficiency of module can be effectively improved；And due to being contacted between chip and conductive film for face, increase contact area, it is ensured that through-current capability, reliability, stability and the security of product, improve module quality and service life.Further, since conductive film is soft material, therefore lead frame need not be designed as bending structure, can so reduce the production cost of whole module.And conductive film thinner thickness, good heat dispersion performance.

Description

A kind of plastic sealed IPM modular electricals attachment structure
Technical field
Field is manufactured the invention belongs to plastic sealed IPM, and in particular to a kind of plastic sealed IPM modular electricals connection knot Structure.
Background technology
Plastic sealed IPM（Intelligent Power Module, SPM）, it is by IGBT（Insulated gate bipolar Transistor npn npn）What chip and its protection circuit such as drive circuit, control circuit and excessively stream, under-voltage, short-circuit, overheat were integrated in one Novel control module.It is a kind of complicated, advanced power model, excessively stream can be realized automatically, the complexity such as under-voltage, short-circuit and overheat Defencive function, thus with intelligent characteristic.Simultaneously it have the advantages that low cost, miniaturization, it is highly reliable, easily use, extensively answer For fields such as frequency-conversion domestic electric appliances, inverter, Industry Controls, Social benefit and economic benefit is very considerable.
For common plastic sealed IPM, its inside is made up of lead frame, chip, bonding line.In application In, the welding of chip, the bonding of lead are all the factors of serious limit product yield rate and production efficiency.At present plastic sealed Widely applied in IPM modules is to paste IGBT, diode and driving chip on the lead frames by way of welding, then The electrical connection between them is completed by bonding line, is finally molded again.There is problems with when in use in which：
（1）IGBT, diode and driving chip are fixedly welded on lead frame, and welding procedure is more complicated, and lead Frame thickness is larger, is unfavorable for the radiating of chip, and overheat increases use cost using the damage for easily causing chip for a long time.
（2）Because what the electrical connection between chip upper surface was connected generally by bonding line, but plastic sealed IPM Middle power chip（Including IGBT, diode chip for backlight unit）It is different with the height residing for driving chip, and driving chip and power core Piece it is distant, this not only increases the difficulty of bonding, and add the risk of bonding line failure, it is reliability, through-flow Ability is poor.
（3）Driving chip and IGBT, diode chip for backlight unit be bonded it is distant, in injection because the flowing of injection molding material has Bonding line may be destroyed.
（4）Lead frame need to carry out bending operation as the carrier of chip to it, because lead frame material is harder, bending Technique can increase the material cost of lead frame.
Therefore, can be with view of problem above, it is necessary to propose a kind of new plastic sealed IPM modular electricals attachment structure Effectively optimize the design of lead frame, reduce the distance of chip chamber, while the technique for omitting chip welding and wire bonding is walked Suddenly, production efficiency is improved, through-current capability, reliability, stability and the security of product is effectively ensured.
The content of the invention
In view of this, the invention provides a kind of plastic sealed IPM modular electricals attachment structure, to realize optimization lead frame Design, reduce chip chamber distance, while omit chip welding and wire bonding processing step, improve production efficiency, have Effect ground ensures the purpose of through-current capability, reliability, stability and the security of product.
A kind of plastic sealed IPM modular electricals attachment structure proposed according to the purpose of the present invention, including lead frame, IGBT Chip, diode chip for backlight unit and driving chip, the structure also include conductive film, and the conductive film is setting up and down two layers, The igbt chip, diode chip for backlight unit and driving chip may be contained between two layers of conductive film, Upper conductive film Two ends are fixedly connected on the lead frame；
Lower conductive film is used to carry the fixed igbt chip, diode chip for backlight unit and driving chip, and the upper strata is led The electrical connection that conductive film is used between the igbt chip, diode chip for backlight unit, driving chip and lead frame.
It is preferred that, between the conductive film and the igbt chip, diode chip for backlight unit, driving chip and lead frame Fitted and fixed by silver paste.
It is preferred that, the conductive film includes internal circuit and external film, and the external film is insulating materials.
It is preferred that, the bottom of the lower conductive film is additionally provided with thermally conductive insulating layer and fin.
Compared with prior art, the advantage of plastic sealed IPM modular electricals attachment structure disclosed by the invention is：The structure is led to The carrier as chip using conductive film is crossed, lead frame is saved as the structure of carrier part, optimization lead frame Design.Power chip and driving chip are arranged to the sustained height on conductive film simultaneously, the distance of chip chamber is effectively reduced, It is easy to the electrical connection of conductive film and chip chamber.Chip is pasted on conductive film by using silver paste, chip is eliminated Welding and wire bonding processing step, the production efficiency of module can be effectively improved；And due to chip and conductive film Between for face contact, increase contact area, it is ensured that through-current capability, reliability, stability and the security of product, improve module matter Amount and service life.
Further, since conductive film is soft material, therefore lead frame need not be designed as bending structure, can so drop The production cost of low whole module.And conductive film thinner thickness, good heat dispersion performance.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of plastic sealed IPM modular electricals attachment structure in the prior art.
Fig. 2 is the schematic diagram of plastic sealed IPM modular electricals attachment structure disclosed by the invention.
The title of digital or alphabetical representative corresponding component in figure：
1st, lead frame 2, Upper conductive film 3, lower conductive film 4, igbt chip 5, diode chip for backlight unit 6, drive Dynamic chip 7, thermally conductive insulating layer 8, fin 9, bonding line
Embodiment
At present, widely applied in plastic sealed IPM modules is that IGBT, diode and driving chip are passed through into welding Mode is pasted on the lead frames, then completes the electrical connection between them by bonding line, is finally molded again.Welding procedure It is more complicated, and leadframe thickness is larger, is unfavorable for the radiating of chip.Height residing for driving chip and power chip is not Together, bonding difficulty is larger.In addition, wire bonding less stable, fragile during injection, the risk of bonding line failure is added. Reliability, through-current capability are poor.In addition, lead frame needs bending to handle, operating efficiency is relatively low, is produced into while adding This.
The present invention is directed to deficiency of the prior art, the invention provides a kind of plastic sealed IPM modular electricals attachment structure, To realize the design of optimization lead frame, reduce the distance between driving chip and power chip, while omitting chip welding and drawing The processing step of line bonding, improves production efficiency, effectively ensures through-current capability, reliability, stability and the security of product Purpose.
Technical scheme will be clearly and completely described by embodiment below.Obviously, retouched The embodiment stated is only a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, sheet The every other embodiment that field those of ordinary skill is obtained under the premise of creative work is not made, belongs to the present invention The scope of protection.
As shown in Fig. 2 a kind of plastic sealed IPM modular electricals attachment structure, including lead frame 1, igbt chip 4, two poles Die 5 and driving chip 6, the structure also include conductive film, and conductive film is setting up and down two layers, igbt chip 4, two Pole pipe chip 5 and driving chip 6 may be contained between two layers of conductive film, and the two ends of Upper conductive film 2, which are fixedly connected on, draws On wire frame 1.
Lower conductive film 3 is used to carry fixed igbt chip 4, diode chip for backlight unit 5 and driving chip 6, conductive film and Igbt chip, diode chip for backlight unit, driving chip and lead frame are fitted by silver paste and fixed.By being replaced from conductive film Fitted in the same way on the lead frames for the carrier as chip such as lead frame or DBC plates, then by conductive film, this The electrical connection of sample is the mode of face contact, and conductive film compare lead frame and DBC plates thickness want it is thin a lot, because This radiating effect is relatively preferable.
Meanwhile, power chip and driving chip can be arranged to the sustained height in lower conductive film, core is effectively reduced Distance between piece.The bottom of chip is attached on conductive film by using silver paste, eliminates the welding procedure of chip, can be very big The plastic sealed IPM modules of raising production efficiency.
Upper conductive film 2 is used for electric between igbt chip 4, diode chip for backlight unit 5, driving chip 6 and lead frame Connection.Conductive film is contacted with chip chamber for face, electrical connection its stability that bonding line more of the prior art is realized, reliable Property preferably, through-current capability is stronger.
Conductive film includes internal circuit and external film, and external film is insulating materials.
The bottom of lower conductive film 3 is additionally provided with thermally conductive insulating layer 7 and fin 8, improves the radiating efficiency of module.
In addition, the thickness of conductive film may be less than 0.5mm etc., depending on specific thickness needs according to use, herein It is not limited.
The invention discloses a kind of plastic sealed IPM modular electricals attachment structure, the structure is by using conductive film conduct The carrier of chip, saves lead frame as the structure of carrier part, optimizes the design of lead frame.Simultaneously by power chip The sustained height on conductive film is arranged at driving chip, the distance of chip chamber is effectively reduced, is easy to conductive film and chip Between electrical connection.Chip is pasted on conductive film by using silver paste, welding and the wire bonding of chip is eliminated Processing step, can effectively improve the production efficiency of module；And due to being contacted between chip and conductive film for face, increase and connect Contacting surface is accumulated, it is ensured that through-current capability, reliability, stability and the security of product, improves module quality and service life.
Further, since conductive film is soft material, therefore lead frame need not be designed as bending structure, can so drop The production cost of low whole module.And conductive film thinner thickness, good heat dispersion performance.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention. A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one The most wide scope caused.

Claims (3)

1. a kind of plastic sealed IPM modular electricals attachment structure, including lead frame, igbt chip, diode chip for backlight unit and driving core Piece, it is characterised in that the structure also includes conductive film, the conductive film is setting up and down two layers, the igbt chip, Diode chip for backlight unit and driving chip be may be contained between two layers of conductive film, and the two ends of Upper conductive film are fixedly connected on On the lead frame；
Lower conductive film is used to carry the fixed igbt chip, diode chip for backlight unit and driving chip, and the Upper conductive is thin The electrical connection that film is used between the igbt chip, diode chip for backlight unit, driving chip and lead frame；The conductive film bag Internal circuit and external film are included, the external film is insulating materials.
2. plastic sealed IPM modular electricals attachment structure as claimed in claim 1, it is characterised in that the conductive film and institute State to fit by silver paste between igbt chip, diode chip for backlight unit, driving chip and lead frame and fix.
3. plastic sealed IPM modular electricals attachment structure as claimed in claim 1, it is characterised in that the lower conductive film Bottom be additionally provided with thermally conductive insulating layer and fin.
CN201410069246.4A 2014-02-27 2014-02-27 A kind of plastic sealed IPM modular electricals attachment structure Active CN104882427B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201410069246.4A CN104882427B (en) 2014-02-27 2014-02-27 A kind of plastic sealed IPM modular electricals attachment structure
PCT/CN2014/082895 WO2015127753A1 (en) 2014-02-27 2014-07-24 Electrical connection structure for plastic package type ipm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410069246.4A CN104882427B (en) 2014-02-27 2014-02-27 A kind of plastic sealed IPM modular electricals attachment structure

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CN104882427B true CN104882427B (en) 2017-10-27

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108321134A (en) * 2018-04-09 2018-07-24 黄山宝霓二维新材科技有限公司 The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density
CN109951982B (en) * 2019-04-23 2023-12-22 浙江思碳亿芯环保技术有限公司 Power connection structure of thin film circuit and air purification device

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CN102315135A (en) * 2010-07-09 2012-01-11 联咏科技股份有限公司 Chip package and manufacturing process thereof
CN102569237A (en) * 2010-12-14 2012-07-11 万国半导体股份有限公司 Semiconductor chip package and assembly method thereof
CN103367305A (en) * 2013-07-31 2013-10-23 西安永电电气有限责任公司 Electric connection structure of IGBT (Insulated Gate Bipolar Transistor) device
US8604610B1 (en) * 2012-06-13 2013-12-10 Fairchild Semiconductor Corporation Flexible power module semiconductor packages

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Publication number Priority date Publication date Assignee Title
CN101807531A (en) * 2010-03-30 2010-08-18 上海凯虹电子有限公司 Ultra-thin chip packaging method and packaged body
CN102315135A (en) * 2010-07-09 2012-01-11 联咏科技股份有限公司 Chip package and manufacturing process thereof
CN102569237A (en) * 2010-12-14 2012-07-11 万国半导体股份有限公司 Semiconductor chip package and assembly method thereof
US8604610B1 (en) * 2012-06-13 2013-12-10 Fairchild Semiconductor Corporation Flexible power module semiconductor packages
CN103367305A (en) * 2013-07-31 2013-10-23 西安永电电气有限责任公司 Electric connection structure of IGBT (Insulated Gate Bipolar Transistor) device

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Address after: 710016 No. 15 Wenjingbei Road, Jingkai District, Xi'an City, Shaanxi Province

Patentee after: Xi'an Zhongche Yongji Electric Co. Ltd.

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