CN104347566A - Plastic packaging type IPM driving protection circuit structure - Google Patents
Plastic packaging type IPM driving protection circuit structure Download PDFInfo
- Publication number
- CN104347566A CN104347566A CN201310311540.7A CN201310311540A CN104347566A CN 104347566 A CN104347566 A CN 104347566A CN 201310311540 A CN201310311540 A CN 201310311540A CN 104347566 A CN104347566 A CN 104347566A
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- Prior art keywords
- lead frame
- chip
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- bonding
- pcb board
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a plastic packaging type IPM driving protection circuit structure. The plastic packaging type IPM driving protection circuit structure includes two sets of lead frames, a power chip, a driver chip and a PCB, the power chip is welded on the first set of lead frame, one end of the PCB is fixedly connected to the second set of lead frame, the driver chip is arranged on the PCB, and the first set of lead frame, the power chip, the PCB, the driver chip and the second set of lead frame are connected in sequence through wire bonding. The second set of lead frame is fixedly connected with the PCB, the driver chip is fixed on the PCB, a bonding distance between the driver chip and the power chip is effectively shortened, thereby facilitating bonding, preventing risks that the bonding distance is long and a bonding wire loses efficacy, reducing influence of glue flow on the bonding wire inside the IPM during glue injection, and improving reliability and stability of a product.
Description
Technical field
The invention belongs to plastic sealed IPM and manufacture field, be specifically related to a kind of plastic sealed IPM Drive Protecting Circuit structure.
Background technology
Plastic sealed IPM(Intelligent Power Module, Intelligent Power Module), be the Novel control module that igbt chip and drive circuit, control circuit and overcurrent, under-voltage, short circuit, the protective circuit such as overheated are integrated in one.It is a kind of complexity, advanced power model, automatically can realize overcurrent, under-voltage, short circuit and the complicated protection function such as overheated, thus have intelligent characteristic.Simultaneously it has the advantages such as low cost, miniaturization, highly reliable, easy use, and be widely used in the fields such as frequency-conversion domestic electric appliances, inverter, Industry Control, Social benefit and economic benefit is very considerable.
For common plastic sealed IPM; the driving protection of IPM inside is generally by being welded on one group of lead frame by power chip (igbt chip and diode chip for backlight unit); driving chip is welded on another group lead frame, then completes driving chip and the electrical connection between lead frame and power chip by the mode of wire bonding.
There is following shortcoming in connected mode of the prior art:
(1) driving chip welding procedure more complicated on the lead frames, operating efficiency is low.
(2) driving chip in plastic sealed IPM is different with the height residing for power chip, link is fixedly installed below one group of lead frame at general power chip place, power chip is welded on this link, therefore the position of driving chip is relatively higher than power chip, driving chip and power chip distant, increases the difficulty of bonding.
(3) due to driving chip and power chip and lead frame bonding distant, can cause destroying bonding line when injecting glue, also can increase the risk that lead-in wire lost efficacy, cause the damage of whole IPM, increase maintenance, replacement cost.
(4) power due to element each on lead frame is comparatively large, is welded in by driving chip after on lead frame and can causes interference to the use of driving chip, affect the performance of driving chip.
Therefore, in view of above problem, be necessary to propose a kind ofly effectively to solve driving chip, bonding distance problem between power chip and lead frame, avoid the risk occurring that bonding line lost efficacy, reduce use cost, the impact of colloid flowing on IPM interior keys zygonema during reduction injecting glue simultaneously, improves the reliability and stability of product.
Summary of the invention
In view of this; the invention provides a kind of plastic sealed IPM Drive Protecting Circuit structure that effectively can solve bonding distance problem between driving chip and power chip; bonding distance is shortened to reach; avoid the risk occurring that bonding line lost efficacy; reduce use cost; the impact of colloid flowing on IPM interior keys zygonema during reduction injecting glue simultaneously, improves the reliability and stability of product.
The one plastic sealed IPM Drive Protecting Circuit structure that object according to the present invention proposes, comprise first group of lead frame, second group of lead frame, power chip, driving chip and pcb board, described power chip is welded on described first group of lead frame, and one end of described pcb board is fixedly connected on described second group of lead frame;
Described driving chip is arranged on described pcb board, and described first group of lead frame, power chip, pcb board, driving chip and second group of lead frame are connected by wire bonding successively.
Preferably, described driving chip is pasted and is fixed on described pcb board.
Preferably, described driving chip is pasted by epoxy and is fixed on described pcb board.
Preferably, described first group of lead frame comprises chassis body and is fixedly connected on the link below described chassis body, described power chip is welded on described link, described pcb board is fixedly connected on the below of described second group of lead frame, shortens the difference in height between power chip and driving chip.
Compared with prior art, the advantage of plastic sealed IPM Drive Protecting Circuit structure disclosed by the invention is: by being fixedly connected with pcb board on second group of lead frame, and driving chip is fixed on pcb board, compared with driving chip being arranged on lead frame with conventional art, bonding distance between driving chip and power chip is effective to be shortened, facilitate bonding, and avoid the risk occurring the longer bonding line inefficacy of bonding distance, improve the useful life of IPM, reduce maintenance, replacement cost, the impact of colloid flowing on IPM interior keys zygonema during reduction injecting glue simultaneously, improve the reliability and stability of product.And can need according to bonding distance the pcb board changing different size, the scope of application is wider.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the front view of a kind of plastic sealed IPM Drive Protecting Circuit structure disclosed by the invention.
Fig. 2 is that cutaway view is looked on a left side for a kind of plastic sealed IPM Drive Protecting Circuit structure disclosed by the invention.
The title of the numeral in figure or the corresponding component representated by letter:
1, first group of lead frame, 2, second group of lead frame 3, power chip 4, driving chip 5, pcb board 6, lead-in wire
21, chassis body 22, link
Embodiment
The driving protection of common plastic sealed IPM inside is generally by being welded on by power chip on one group of lead frame, driving chip is welded on another group lead frame, driving chip and the electrical connection between lead frame and power chip is completed again by the mode of wire bonding, there is welding procedure more complicated, operating efficiency is low; Driving chip and power chip distant, bonding difficulty is comparatively large, and can increase the risk that lead-in wire lost efficacy, and causes interference, affect the various problems such as the performance of driving chip and deficiency to the use of driving chip.
The present invention is directed to deficiency of the prior art; the invention provides a kind of plastic sealed IPM Drive Protecting Circuit structure that effectively can solve bonding distance problem between driving chip and power chip; bonding distance is shortened to reach; avoid the risk occurring that bonding line lost efficacy; reduce use cost; the impact of colloid flowing on IPM interior keys zygonema during reduction injecting glue simultaneously, improves the reliability and stability of product.
To be clearly and completely described technical scheme of the present invention by embodiment below.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The one plastic sealed IPM Drive Protecting Circuit structure that object according to the present invention proposes, comprise first group of lead frame 1, second group of lead frame 2, power chip 3, driving chip 4 and pcb board 5, power chip 3 is welded on first group of lead frame 1, one end of pcb board 5 is fixedly connected on second group of lead frame 2, the length of second group of lead frame is added by arranging pcb board 5, shorten the distance between two groups of lead frames, driving chip 4 is arranged on pcb board 5, first group of lead frame 1, power chip 3, pcb board 5, driving chip 4 and second group of lead frame 2 are connected by lead-in wire 6 bonding successively.
By being fixedly connected with pcb board 5 on second group of lead frame 2, and driving chip 4 is fixed on pcb board 5, the function end of driving chip 4 extends to and first group of lead frame 1 and the near as far as possible position of power chip 3 by the circuit on pcb board 5, greatly shorten the distance of wire bonding, facilitate bonding, ensure that bonding line can not lose efficacy in the process of Long-Time Service, improve the useful life of IPM, reduce maintenance, replacement cost.The impact of colloid flowing on IPM interior keys zygonema during reduction injecting glue simultaneously, improves the reliability and stability of product.
In addition, can need according to bonding distance the pcb board changing different size, the scope of application is wider.
Driving chip 4 is pasted and is fixed on pcb board 5.Relative to welding procedure, barbola work better realizes, and better effects if is effectively increased work efficiency.
Driving chip 4 is pasted by epoxy and is fixed on pcb board 5.Epoxy has excellent physical and mechanical properties, electrical insulation capability, resistance to chemical corrosion, heat-resisting and adhesive property, normal temperature cure, and have bonding force strong, good toughness, is superior to the advantage of general monomer amine curing agent significantly.
First group of lead frame 1 comprises chassis body 21 and is fixedly connected on the link 22 below chassis body 21, power chip 3 is welded on link 22, pcb board 5 is fixedly connected on the below of second group of lead frame 2, shortens the difference in height between power chip 3 and driving chip 4, is convenient to bonding.
The invention discloses a kind of plastic sealed IPM Drive Protecting Circuit structure.By being fixedly connected with pcb board on second group of lead frame, and driving chip is fixed on pcb board, compared with driving chip being arranged on lead frame with conventional art, bonding distance between driving chip and power chip is effective to be shortened, facilitate bonding, and avoid the risk occurring the longer bonding line inefficacy of bonding distance, improve the useful life of IPM, reduce maintenance, replacement cost, the impact of colloid flowing on IPM interior keys zygonema during reduction injecting glue simultaneously, improves the reliability and stability of product.And can need according to bonding distance the pcb board changing different size, the scope of application is wider.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (4)
1. a plastic sealed IPM Drive Protecting Circuit structure, it is characterized in that, comprise first group of lead frame, second group of lead frame, power chip, driving chip and pcb board, described power chip is welded on described first group of lead frame, and one end of described pcb board is fixedly connected on described second group of lead frame;
Described driving chip is arranged on described pcb board, and described first group of lead frame, power chip, pcb board, driving chip and second group of lead frame are connected by wire bonding successively.
2. plastic sealed IPM Drive Protecting Circuit structure as claimed in claim 1, is characterized in that, described driving chip is pasted and is fixed on described pcb board.
3. plastic sealed IPM Drive Protecting Circuit structure as claimed in claim 2, is characterized in that, described driving chip is pasted by epoxy and is fixed on described pcb board.
4. plastic sealed IPM Drive Protecting Circuit structure as claimed in claim 1; it is characterized in that; described first group of lead frame comprises chassis body and is fixedly connected on the link below described chassis body; described power chip is welded on described link; described pcb board is fixedly connected on the below of described second group of lead frame, shortens the difference in height between power chip and driving chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310311540.7A CN104347566A (en) | 2013-07-23 | 2013-07-23 | Plastic packaging type IPM driving protection circuit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310311540.7A CN104347566A (en) | 2013-07-23 | 2013-07-23 | Plastic packaging type IPM driving protection circuit structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104347566A true CN104347566A (en) | 2015-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310311540.7A Pending CN104347566A (en) | 2013-07-23 | 2013-07-23 | Plastic packaging type IPM driving protection circuit structure |
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| CN (1) | CN104347566A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106313422A (en) * | 2015-06-30 | 2017-01-11 | 西安永电电气有限责任公司 | Injection molding method for plastic encapsulated type IPM and plastic encapsulated type IPM |
| CN109637938A (en) * | 2018-11-21 | 2019-04-16 | 杰群电子科技（东莞）有限公司 | A kind of power modules processing method and power modules |
| CN109659302A (en) * | 2018-12-11 | 2019-04-19 | 杰群电子科技（东莞）有限公司 | A kind of power modules processing method and power modules |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6713857B1 (en) * | 2002-12-05 | 2004-03-30 | Ultra Tera Corporation | Low profile stacked multi-chip semiconductor package with chip carrier having opening and fabrication method of the semiconductor package |
| CN2935471Y (en) * | 2006-07-18 | 2007-08-15 | 天水华天科技股份有限公司 | Two-chip packaging |
| CN202042483U (en) * | 2011-02-25 | 2011-11-16 | 比亚迪股份有限公司 | Package structure of power semiconductor device |
-
2013
- 2013-07-23 CN CN201310311540.7A patent/CN104347566A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6713857B1 (en) * | 2002-12-05 | 2004-03-30 | Ultra Tera Corporation | Low profile stacked multi-chip semiconductor package with chip carrier having opening and fabrication method of the semiconductor package |
| CN2935471Y (en) * | 2006-07-18 | 2007-08-15 | 天水华天科技股份有限公司 | Two-chip packaging |
| CN202042483U (en) * | 2011-02-25 | 2011-11-16 | 比亚迪股份有限公司 | Package structure of power semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106313422A (en) * | 2015-06-30 | 2017-01-11 | 西安永电电气有限责任公司 | Injection molding method for plastic encapsulated type IPM and plastic encapsulated type IPM |
| CN109637938A (en) * | 2018-11-21 | 2019-04-16 | 杰群电子科技（东莞）有限公司 | A kind of power modules processing method and power modules |
| CN109659302A (en) * | 2018-12-11 | 2019-04-19 | 杰群电子科技（东莞）有限公司 | A kind of power modules processing method and power modules |
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Application publication date: 20150211 |
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| RJ01 | Rejection of invention patent application after publication |