CN106158802A - Ultrathin surface-mount commutator - Google Patents
Ultrathin surface-mount commutator Download PDFInfo
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- CN106158802A CN106158802A CN201610625998.3A CN201610625998A CN106158802A CN 106158802 A CN106158802 A CN 106158802A CN 201610625998 A CN201610625998 A CN 201610625998A CN 106158802 A CN106158802 A CN 106158802A
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- wire bar
- pin area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
Abstract
The invention discloses a kind of Ultrathin surface-mount commutator, its diode chip for backlight unit includes that surface is provided with the heavily doped P-type monocrystalline silicon piece in heavily doped N-type district, heavily doped N-type district contacts with heavily doped P-type monocrystalline silicon piece, heavily doped N-type district is formed around groove, and groove is positioned at heavily doped P-type monocrystalline silicon piece and heavily doped N-type district surrounding and extends to the middle part of heavily doped P-type monocrystalline silicon piece；A strip bulge insulation division it is provided with bottom described epoxy packages body, this strip bulge insulation division is positioned at the pin area of the first lead-in wire bar and the pin area of the second lead-in wire bar, and the both side surface being positioned at strip bulge insulation division is respectively equipped with the first arc-shaped recess district and the second arc-shaped recess district.By the way, invention increases contact area, connect sheet and will add more than 65% with wire contacts district, diode component improves with PCB weld strength.
Description
Technical field
The present invention relates to rectifying device field, particularly relate to a kind of Ultrathin surface-mount commutator.
Background technology
Ultrathin surface-mount commutator is a kind of electronic device with unidirectional conduction electric current, existing ultrathin surface patch
Dress commutator mainly deposits techniques below problem: on the one hand, and the internal material connected mode of device is mainly by weld tabs at high temperature
Together with chip is securely attached to by lower thawing with lead-in wire, but copper lead-in wire and scolding tin are difficult to accomplish the fusion of 100%, usual core
Sheet is 85% with being connected sheet efficient weld area, and this one end that goes between only has about 60%, causes when big electric current passes through, and electric current divides
Cloth is uneven, reduces product and bears the ability of surge." weld " be rectifying device produce critical process, particularly diode
Class rectifying device, be designed into that chip and conductive lead wire position are the most carefully and neatly done, whether weld tabs repeats and put, furnace temperature temperature design whether
Rationally etc., the defective products that welding produces accounts for defective products total amount and reaches more than 80%, and whether welding link processes proper directly affecting
The final quality of product, this project i.e. carries out a series of improvement in rectifying device product design and production technology.Production makes new advances
Generation diode rectifier.
On the other hand, in addition to high power device, common rectifying device chip is square, and weld tabs is circular.By height
In temperature welding continuous tunnel furnace, weld tabs i.e. melts as liquid, respectively connection chip and conductive lead wire.Owing to weld tabs presents not after high temperature
Regular shape, after thawing, four back gauges with chip are respectively less than 0.2mm, once chip and weld tabs position have slight inclination or
Person's welding temperature and speed of welding have slight deviation, scolding tin fall to flow to the edge of chip, thus touch the another of chip
Simultaneously, the scolding tin flow through will become a wire, and rectifying device directly becomes wire, forms short circuit and cannot use；Another
Even if kind of a situation is that scolding tin is not exposed to chip edge, client in use produces high temperature makes weld tabs thawing also have
State situation, cause client to lose increasing.
Summary of the invention
The technical problem that present invention mainly solves is to provide a kind of Ultrathin surface-mount commutator, and this ultrathin type surface is pasted
Dress commutator adds contact area, connects sheet and will add more than 65% with wire contacts district, and diode component welds with PCB
Intensity improves, thus improves hot strength and improve electrical property.
For solving above-mentioned technical problem, the technical scheme that the present invention uses is: provide a kind of Ultrathin surface-mount
Commutator, including being positioned at the first lead-in wire bar of epoxy packages body, the second lead-in wire bar, connecting sheet and diode chip for backlight unit, this is first years old
Lead-in wire bar one end is the Support being connected with diode chip for backlight unit, and diode chip for backlight unit one end is electrically connected with this Support by solder(ing) paste
Connecing, the first lead-in wire bar other end is pin area, and the pin area of this first lead-in wire bar is as the electric current transmission ends of described commutator；
Described connection sheet two ends are respectively the first welding ends and the second welding ends；Described second lead-in wire bar one end is to be connected with described
The weld zone that first welding ends of sheet connects, this second lead-in wire bar other end is pin area, the pin area conduct of the second lead-in wire bar
The electric current transmission ends of described commutator；Described connection sheet the second welding ends is electrically connected by solder(ing) paste with the diode chip for backlight unit other end
Connect；
Described diode chip for backlight unit includes that surface is provided with the heavily doped P-type monocrystalline silicon piece in heavily doped N-type district, this heavily doped N-type district with
Heavily doped P-type monocrystalline silicon piece contacts, and heavily doped N-type district is formed around groove, and this groove is positioned at heavily doped P-type monocrystalline silicon piece and weight
Doped N-type district surrounding also extends to the middle part of heavily doped P-type monocrystalline silicon piece；The surface of described groove is coated with insulation passivation protection
Layer, this insulation passivation protection floor is extended to the marginal area on surface, heavily doped N-type district, surface, heavily doped P-type district by channel bottom
It is coated with one layer of second metal level as another electrode；
Heavily doped N-type region inside described insulation passivation protection layer has a U-shaped groove, under this heavily doped N-type district
Surface and be positioned at U-shaped groove and be arranged right below a downward lobe, the described heavily doped N-type district exposed and U-shaped groove
Surface is coated with the first metal layer as electrode；
Second welding ends of described connection sheet is by the alternately arranged wavy surfaces formed in several crest faces and trough face, should
Wavy surfaces is electrically connected with diode chip for backlight unit by scolding tin layer of paste, and it is recessed that the wavy surfaces end of described connection sheet is positioned at U-shaped
Directly over groove；
Being provided with a strip bulge insulation division bottom described epoxy packages body, this strip bulge insulation division is positioned at drawing of the first lead-in wire bar
Between the pin area of foot district and the second lead-in wire bar, the both side surface being positioned at strip bulge insulation division is respectively equipped with the first arc-shaped recess
District and the second arc-shaped recess district, this first arc-shaped recess district and the second arc-shaped recess district respectively with first lead-in wire bar pin area and
The pin area of the second lead-in wire bar is oppositely arranged.
Preferably, between Support and the pin area of described first lead-in wire bar, region is provided with one first bending part so that the
The Support of one lead-in wire bar is less than pin area；
Between weld zone and the pin area of described second lead-in wire bar, region is provided with one second bending part, so that the second lead-in wire bar
Weld zone less than pin area；
It is provided with the 3rd bending part, so that the first welding ends is low between first welding ends and second welding ends of described connection sheet
In the second welding ends.
Preferably, the both sides, weld zone of described second lead-in wire bar are provided with block.
Preferably, the area of the weld zone of described second lead-in wire bar is more than the area of described first welding ends.
The invention has the beneficial effects as follows: 1, Ultrathin surface-mount commutator of the present invention, it connects the second welding ends of sheet
For by the alternately arranged wavy surfaces formed in several crest faces and trough face, this wavy surfaces by described solder(ing) paste with
Diode chip for backlight unit electrically connects, and the wavy surfaces end of described connection sheet is positioned at directly over U-shaped groove, according to the specification of product not
With designing 3 ~ 6 lines, in welding process, connect sheet under the effect of high temperature, become the liquid of flowing, be filled into
In wave zone, adding contact area, connect sheet and will add more than 65% with wire contacts district, diode component welds with PCB
Intensity improves, thus improves hot strength, and electrical property improves, in the situation not changing lead-in wire, chip and bulk area
Under, only when lead design, the wire length of increase by 10% can solve a difficult problem for long-standing problem welding procedure, is only increasing by 1.3%
Cost under create product profit and improve 7 percentage points；Simultaneously because use novel lead-in wire pad, using this work
Skill, the welding procedure level making discrete device crucial is greatly improved, product when bearing instability or big electric current,
Device is in good use state all the time；Secondly, it uses the novel lead wire pad of this Project design, can make to pass from outside
The hard draw power being delivered to weld zone is progressively absorbed, it is ensured that pad, from mechanical damage, will not occur to appoint in process of production
The defective products such as what internal cleavage, the complaint of chip cracks is dropped to less than 2 by client from annual 8.
2, Ultrathin surface-mount commutator of the present invention, its heavily doped N-type inside described insulation passivation protection layer
Region has a U-shaped groove, this heavily doped N-type district lower surface and be positioned at U-shaped groove and be arranged right below a downward lobe,
The described heavily doped N-type district exposed and the surface of U-shaped groove cover the first metal layer as electrode；Circular weld tabs is being more than
The welding tunnel of 260 DEG C starts melt and in irregular, start to flow to the edge of chip under the compressing of conductive lead wire,
In the case of weld interval and temperature can not definitely control, scolding tin flows through the external protection of chip and forms " Xi Qiao ", is provided with water conservancy diversion
The chip of groove now starts to absorb the weld tabs melted, and owing to guiding gutter is annular design, the unnecessary scolding tin in any direction all will enter
Enter the guiding gutter of welding, and there is in guiding gutter good mobility, unnecessary scolding tin averagely can be allocated, it is ensured that all
Even welding, adds the intensity of welding, makes unnecessary scolding tin carry out again with, bonding area and at least adds 15%, welding
Yield also will promote 6 percentage points.2..The hexagonal core the most close with weld tabs area is devised for high-power rectifying device
Sheet, it is ensured that maximum efficient weld area, makes the overvoltage protection ability of chip be given full play to, the width of U-shaped guiding gutter with
The degree of depth is individually designed according to the size of chip area.By experiment certification, owing to solder side has obtained the expansion of more than 13%, make
Chip area drops to 60-65mil from existing 80mil, in the case of not affecting overvoltage protection ability, under chip cost
Having dropped 11%, high power device welding machine yield reaches more than 97%.
3, Ultrathin surface-mount commutator of the present invention, is provided with a strip bulge insulation bottom its described epoxy packages body
Portion, this strip bulge insulation division is positioned at pin area and the pin area of the second lead-in wire bar of the first lead-in wire bar, is positioned at strip bulge exhausted
The both side surface of edge is respectively equipped with the first arc-shaped recess district and the second arc-shaped recess district, this first arc-shaped recess district and the second arc
Shape depressed area is oppositely arranged with the pin area of the first lead-in wire bar and the pin area of the second lead-in wire bar respectively, it is achieved at compact products
In, it is effectively increased pin creep age distance, adds product ontology area of dissipation, improve reliability and the safety of device
Property.
Accompanying drawing explanation
Fig. 1 is the structural representation of Ultrathin surface-mount commutator one of the present invention preferred embodiment；
Fig. 2 is the diode chip structure schematic diagram in shown Ultrathin surface-mount commutator.
In accompanying drawing, the labelling of each parts is as follows: 1, the first lead-in wire bar；2, the second lead-in wire bar；3, sheet is connected；31, the first welding
End；32, the second welding ends；4, diode chip for backlight unit；41, heavily doped P-type monocrystalline silicon piece；42, heavily doped N-type district；43, lobe；
44, groove；45, insulation passivation protection layer；46, the first metal layer；47, the second metal level；48, U-shaped groove；5, Support；61、
First pin area；62, the second pin area；7, weld zone；9, the first bending part；10, the second bending part；11, the 3rd bending part；
12, epoxy packages body；13, crest face；14, trough face；15, scolding tin layer of paste；16, strip bulge insulation division；17, the first arc is recessed
Fall into district；18, the second arc-shaped recess district.
Detailed description of the invention
Below in conjunction with the accompanying drawings presently preferred embodiments of the present invention is described in detail, so that advantages and features of the invention energy
It is easier to be readily appreciated by one skilled in the art, thus protection scope of the present invention is made apparent clear and definite defining.
Referring to Fig. 1 and Fig. 2, the embodiment of the present invention includes:
Embodiment 1: a kind of Ultrathin surface-mount commutator, including epoxy packages body 12 and be located in epoxy packages body 12 the
One lead-in wire bar the 1, second lead-in wire bar 2, connection sheet 3 and diode chip for backlight unit 4, this first lead-in wire bar 1 one end is with diode chip for backlight unit 4 even
The Support 5 connect, described diode chip for backlight unit 4 one end is electrically connected with this Support 5 by solder(ing) paste, first lead-in wire bar 1 other end
Being the first pin area 61, the first pin area 61 of this first lead-in wire bar 1 is as the electric current transmission ends of described commutator；
Described connection sheet 3 two ends are respectively the first welding ends 31 and the second welding ends 32, and described second lead-in wire bar 2 one end is and institute
Stating and connect the weld zone 7 that the first welding ends 31 of sheet 3 connects, this second lead-in wire bar 2 other end is the second pin area 62, and this is second years old
Second pin area 62 of lead-in wire bar 2 is as the electric current transmission ends of described commutator；Described connection sheet 3 second welding ends 32 and two poles
Die 4 other end is electrically connected by solder(ing) paste；
Described diode chip for backlight unit 4 includes that surface is provided with the heavily doped P-type monocrystalline silicon piece 41 in heavily doped N-type district 42, this heavily doped N-type
District 42 contacts with heavily doped P-type monocrystalline silicon piece 41, and heavily doped N-type district 42 is formed around groove 44, and this groove 44 is positioned at heavy doping P
Type monocrystalline silicon piece 41 and heavily doped N-type district 42 surrounding also extend to the middle part of heavily doped P-type monocrystalline silicon piece 41；Described groove 44
Surface is coated with insulation passivation protection layer 45, and this insulation passivation protection floor 45 is by extending to heavily doped N-type district 42 bottom groove 44
The marginal area on surface, surface, heavily doped P-type district 41 covers the second metal level 47 as another electrode；
Region, heavily doped N-type district 42 inside described insulation passivation protection floor 45 has a U-shaped groove 48, this heavy doping N
Type district 42 lower surface and be positioned at U-shaped groove and be arranged right below a downward lobe 43, the described heavily doped N-type district 42 exposed
The first metal layer 46 as electrode is covered with the surface of U-shaped groove；
Second welding ends 32 of described connection sheet 3 is by the alternately arranged waveform formed in several crest faces 13 and trough face 14
Surface, this wavy surfaces is electrically connected with diode chip for backlight unit 4 by scolding tin layer of paste 15, the wavy surfaces end of described connection sheet 3
End is positioned at directly over U-shaped groove 48；
Being provided with a strip bulge insulation division 16 bottom described epoxy packages body 12, this strip bulge insulation division 16 is positioned at the first lead-in wire
Between first pin area 61 and second pin area 62 of the second lead-in wire bar 2 of bar 1, it is positioned at the both sides table of strip bulge insulation division 16
Face is respectively equipped with the first arc-shaped recess district 17 and the second arc-shaped recess district 18, this first arc-shaped recess district 17 and second arc-shaped recess
District 18 is oppositely arranged with the first pin area 61 of the first lead-in wire bar 1 and the second pin area 62 of the second lead-in wire bar 2 respectively.
Between Support 5 and first pin area 61 of above-mentioned first lead-in wire bar 1, region is provided with one first bending part 9, thus
Make the Support 5 of the first lead-in wire bar 1 less than the first pin area 61；The area of the weld zone 7 of above-mentioned second lead-in wire bar 2 is more than institute
State the area of the first welding ends 31.
Embodiment 2: a kind of Ultrathin surface-mount commutator, including be positioned at epoxy packages body 12 the first lead-in wire bar 1,
Second lead-in wire bar 2, connection sheet 3 and diode chip for backlight unit 4, this first lead-in wire bar 1 one end is the Support being connected with diode chip for backlight unit 4
5, described diode chip for backlight unit 4 one end is electrically connected with this Support 5 by solder(ing) paste, and first lead-in wire bar 1 other end is the first pin
District 61, the first pin area 61 of this first lead-in wire bar 1 is as the electric current transmission ends of described commutator；
Described second lead-in wire bar 2 one end is the weld zone 7 connected with described the first welding ends 31 being connected sheet 3, this second lead-in wire
Bar 2 other end is the second pin area 62, and the second pin area 62 of this second lead-in wire bar 2 is transmitted as the electric current of described commutator
End；Described connection sheet 3 second welding ends 32 is electrically connected by solder(ing) paste with diode chip for backlight unit 4 other end；
Described diode chip for backlight unit 4 includes that surface is provided with the heavily doped P-type monocrystalline silicon piece 41 in heavily doped N-type district 42, this heavily doped N-type
District 42 contacts with heavily doped P-type monocrystalline silicon piece 41, and heavily doped N-type district 42 is formed around groove 44, and this groove 44 is positioned at heavy doping P
Type monocrystalline silicon piece 41 and heavily doped N-type district 42 surrounding also extend to the middle part of heavily doped P-type monocrystalline silicon piece 41；Described groove 44
Surface is coated with insulation passivation protection layer 45, and this insulation passivation protection floor 45 is by extending to heavily doped N-type district 42 bottom groove 44
The marginal area on surface, surface, heavily doped P-type district 41 covers the second metal level 47 as another electrode；
Region, heavily doped N-type district 42 inside described insulation passivation protection floor 45 has a U-shaped groove 48, this heavy doping N
Type district 42 lower surface and be positioned at U-shaped groove 48 and be arranged right below a downward lobe 43, the described heavily doped N-type district exposed
42 and the surface of U-shaped groove 48 cover as the first metal layer 46 of electrode；
Second welding ends 32 of described connection sheet 3 is by the alternately arranged waveform formed in several crest faces 13 and trough face 14
Surface, this wavy surfaces is electrically connected with diode chip for backlight unit 4 by scolding tin layer of paste 15, the wavy surfaces end of described connection sheet 3
End is positioned at directly over U-shaped groove；
Being provided with a strip bulge insulation division 16 bottom described epoxy packages body 12, this strip bulge insulation division 16 is positioned at the first lead-in wire
First pin area 61 and the second pin area 62 of the second lead-in wire bar 2 of bar 1, the both side surface being positioned at strip bulge insulation division 16 is divided
It is not provided with the first arc-shaped recess district 17 and the second arc-shaped recess district 18, this first arc-shaped recess district 17 and second arc-shaped recess district 18
It is oppositely arranged with the first pin area 61 of the first lead-in wire bar 1 and the second pin area 62 of the second lead-in wire bar 2 respectively.
Between Support 5 and first pin area 61 of above-mentioned first lead-in wire bar 1, region is provided with one first bending part 9, thus
Make the Support 5 of the first lead-in wire bar 1 less than the first pin area 61；The weld zone 7 of described second lead-in wire bar 2 and the second pin area
Between 62, region is provided with one second bending part 10, so that the weld zone 7 of the second lead-in wire bar 2 is less than the second pin area 62；Institute
State and be provided with the 3rd bending part 11 between the first welding ends 31 and second welding ends 32 of connection sheet 3, so that the first welding ends
Less than the second welding ends.The both sides, weld zone 7 of above-mentioned second lead-in wire bar 2 are provided with block.
When using above-mentioned Ultrathin surface-mount commutator, 3 ~ 6 lines can be designed according to the specification difference of product,
In welding process, connect sheet under the effect of high temperature, become the liquid of flowing, be filled in wave zone, add contact surface
Long-pending, connect sheet and will add more than 65% with wire contacts district, diode component improves with PCB weld strength, thus improves and draw
Stretching intensity, electrical property improves, and in the case of not changing lead-in wire, chip and bulk area, only increases when lead design
The wire length of 10% can solve a difficult problem for long-standing problem welding procedure, creates product profit under only increasing by the cost of 1.3%
Profit improves 7 percentage points；Simultaneously because use novel lead-in wire pad, using this technique, making discrete device key
Welding procedure level is greatly improved, and product is when bearing instability or big electric current, and device is in good all the time
Use state；Secondly, it uses the novel lead wire pad of this Project design, can make to be delivered to the hard draw power of weld zone from outside
Progressively absorbed, it is ensured that pad, from mechanical damage, will not occur any internal cleavage etc. bad in process of production
Product, the complaint of chip cracks is dropped to less than 2 by client from annual 8；Again, its circular weld tabs is more than 260 DEG C
Welding tunnel starts to melt and in irregular, starts to flow to the edge of chip under the compressing of conductive lead wire, when welding
Between and in the case of temperature can not definitely control, scolding tin flows through the external protection of chip and forms " Xi Qiao ", is provided with the core of guiding gutter
Sheet now starts to absorb the weld tabs melted, and owing to guiding gutter is annular design, entrance is all welded by the unnecessary scolding tin in any direction
Guiding gutter, and there is in guiding gutter good mobility, unnecessary scolding tin averagely can be allocated, it is ensured that uniformly weld
Connect, add the intensity of welding, make unnecessary scolding tin carry out again with, bonding area and at least add 15%, weld yield
Also 6 percentage points will be promoted.The hexagonal chips the most close with weld tabs area is devised for high-power rectifying device, it is ensured that
Maximum efficient weld area, makes the overvoltage protection ability of chip be given full play to, the width of U-shaped guiding gutter and the degree of depth according to
The size of chip area is individually designed.By experiment certification, owing to solder side has obtained the expansion of more than 13%, make chip area
Dropping to 60-65mil from existing 80mil, in the case of not affecting overvoltage protection ability, chip cost have dropped 11%,
High power device welding machine yield reaches more than 97%.
The foregoing is only embodiments of the invention, not thereby limit the scope of the claims of the present invention, every utilize this
The equivalent structure that bright description and accompanying drawing content are made, or directly or indirectly it is used in other relevant technical fields, the most in like manner
It is included in the scope of patent protection of the present invention.
Claims (4)
1. a Ultrathin surface-mount commutator, including being positioned at the first lead-in wire bar (1) of epoxy packages body (12), second drawing
Lines (2), connecting sheet (3) and diode chip for backlight unit (4), this first lead-in wire bar (1) one end is propping up of being connected with diode chip for backlight unit (4)
Support district (5), diode chip for backlight unit (4) one end is electrically connected with this Support (5) by solder(ing) paste, and first lead-in wire bar (1) other end is
First pin area (61), the first pin area (61) are as the electric current transmission ends of commutator；Described connection sheet (3) two ends are respectively
One welding ends (31) and the second welding ends (32)；Described second lead-in wire bar (2) one end is and described the first welding being connected sheet (3)
The weld zone (7) that end (31) connects, this second lead-in wire bar (2) other end is the second pin area (62), and the second pin area (62) are made
Electric current transmission ends for commutator；Described connection sheet (3) second welding ends (32) and diode chip for backlight unit (4) other end pass through scolding tin
Cream electrically connects；Described diode chip for backlight unit (4) includes that surface is provided with the heavily doped P-type monocrystalline silicon piece (41) in heavily doped N-type district (42),
This heavily doped N-type district (42) contacts with heavily doped P-type monocrystalline silicon piece (41), and heavily doped N-type district (42) are formed around groove (44),
This groove (44) is positioned at heavily doped P-type monocrystalline silicon piece (41) and heavily doped N-type district (42) surrounding and extends to heavily doped P-type monocrystalline
The middle part of silicon chip (41)；The surface of described groove (44) is coated with insulation passivation protection layer (45), this passivation protection layer that insulate
(45) extended to the marginal area on heavily doped N-type district (42) surface by groove (44) bottom, heavily doped P-type district (41) surface covers
There is the second metal level (47) as electrode；It is characterized in that, near the heavy doping N of described insulation passivation protection layer (45) inner side
Type district (42) region has a U-shaped groove (48), this heavily doped N-type district (42) lower surface and be positioned at immediately below U-shaped groove (48)
Being provided with a downward lobe (43), the described heavily doped N-type district (42) exposed and the surface of U-shaped groove (48) are coated with work
The first metal layer (46) for electrode；Second welding ends (32) of described connection sheet (3) is by several crest face (13) and ripple
The wavy surfaces of paddy face (14) alternately arranged composition, this wavy surfaces is by scolding tin layer of paste (15) and diode chip for backlight unit (4)
Electrical connection, the wavy surfaces end of described connection sheet (3) is positioned at directly over U-shaped groove (48)；Described epoxy packages body (12)
Bottom is provided with a strip bulge insulation division (16), and this strip bulge insulation division (16) is positioned at the first pin of the first lead-in wire bar (1)
Between second pin area (62) of district (61) and the second lead-in wire bar (2), the both side surface being positioned at strip bulge insulation division (16) is divided
Not being provided with the first arc-shaped recess district (17) and the second arc-shaped recess district (18), this first arc-shaped recess district (17) and the second arc are recessed
Fall into district (18) respectively with first lead-in wire bar (1) the first pin area (61) and second go between bar (2) the second pin area (62) phase
To setting.
Ultrathin surface-mount commutator the most according to claim 1, it is characterised in that: described first lead-in wire bar (1)
Between Support (5) and the first pin area (61), region is provided with one first bending part (9), the Support (5) of the first lead-in wire bar (1)
Less than the first pin area (61)；Between weld zone (7) and the second pin area (62) of described second lead-in wire bar (2), region is provided with one
Second bending part (10), the weld zone (7) of the second lead-in wire bar (2) is less than the second pin area (62)；The first of described connection sheet (3)
The 3rd bending part (11) it is provided with, so that the first welding ends is less than the second weldering between welding ends (31) and the second welding ends (32)
Connect end.
Ultrathin surface-mount commutator the most according to claim 1, it is characterised in that: described second lead-in wire bar (2)
Weld zone (7) both sides are provided with block.
Ultrathin surface-mount commutator the most according to claim 1, it is characterised in that: described second lead-in wire bar (2)
The area of weld zone (7) is more than the area of described first welding ends (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610625998.3A CN106158802A (en) | 2016-08-03 | 2016-08-03 | Ultrathin surface-mount commutator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610625998.3A CN106158802A (en) | 2016-08-03 | 2016-08-03 | Ultrathin surface-mount commutator |
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| CN106158802A true CN106158802A (en) | 2016-11-23 |
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| CN201610625998.3A Pending CN106158802A (en) | 2016-08-03 | 2016-08-03 | Ultrathin surface-mount commutator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197923A (en) * | 2001-12-27 | 2003-07-11 | Sanken Electric Co Ltd | Semiconductor device |
| US20110108968A1 (en) * | 2006-05-04 | 2011-05-12 | International Rectifier Corporation | Semiconductor package with metal straps |
| CN103117355A (en) * | 2013-02-01 | 2013-05-22 | 苏州固锝电子股份有限公司 | Patch type diode device structure |
| US20140042471A1 (en) * | 2012-01-31 | 2014-02-13 | Rohm Co., Ltd. | Light-emitting apparatus and manufacturing method thereof |
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2016
- 2016-08-03 CN CN201610625998.3A patent/CN106158802A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003197923A (en) * | 2001-12-27 | 2003-07-11 | Sanken Electric Co Ltd | Semiconductor device |
| US20110108968A1 (en) * | 2006-05-04 | 2011-05-12 | International Rectifier Corporation | Semiconductor package with metal straps |
| US20140042471A1 (en) * | 2012-01-31 | 2014-02-13 | Rohm Co., Ltd. | Light-emitting apparatus and manufacturing method thereof |
| CN103117355A (en) * | 2013-02-01 | 2013-05-22 | 苏州固锝电子股份有限公司 | Patch type diode device structure |
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Application publication date: 20161123 |