CN204596778U - Intelligent power module - Google Patents

Intelligent power module Download PDF

Info

Publication number
CN204596778U
CN204596778U CN201520166339.9U CN201520166339U CN204596778U CN 204596778 U CN204596778 U CN 204596778U CN 201520166339 U CN201520166339 U CN 201520166339U CN 204596778 U CN204596778 U CN 204596778U
Authority
CN
China
Prior art keywords
power module
intelligent power
substrate
circuit
insulating barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520166339.9U
Other languages
Chinese (zh)
Inventor
冯宇翔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midea Group Co Ltd
GD Midea Air Conditioning Equipment Co Ltd
Original Assignee
Midea Group Co Ltd
Guangdong Midea Refrigeration Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midea Group Co Ltd, Guangdong Midea Refrigeration Equipment Co Ltd filed Critical Midea Group Co Ltd
Priority to CN201520166339.9U priority Critical patent/CN204596778U/en
Application granted granted Critical
Publication of CN204596778U publication Critical patent/CN204596778U/en
Priority to JP2018500841A priority patent/JP6500162B2/en
Priority to PCT/CN2016/077143 priority patent/WO2016150391A1/en
Priority to US15/559,834 priority patent/US10615155B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Abstract

The utility model is applicable to electronic device manufacturing technology, provides a kind of Intelligent Power Module, comprising: substrate, comprise first surface and the second surface relative with this first surface, described first surface forms gauffer, and described second surface is coated with insulating barrier, and described substrate is papery radiator; Circuit-wiring layer, is formed at the surface of described insulating barrier; Circuit element, is disposed in described circuit-wiring layer relevant position; Metal wire, connects described circuit-wiring layer and circuit element.The back side due to Intelligent Power Module has heat radiation gauffer, and area of dissipation greatly increases, and insulating barrier can meet power component cooling requirements without the need to using highly heat-conductive material; Radiator structure is paper material, lightweight, and Intelligent Power Module overall weight reduces, and is convenient to long-distance transport and workman's assembling; Because module itself possesses radiator, so in application process, outside without the need to connecing radiator again, reduce application difficulty and application cost, assembling quality is provided.

Description

Intelligent Power Module
Technical field
The utility model belongs to electronic device manufacturing process field, particularly relates to a kind of Intelligent Power Module.
Background technology
Intelligent Power Module (Intelligent Power Module, IPM) is a kind of power drive series products power electronics and integrated circuit technique combined.IPM integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.IPM mono-aspect receives the control signal of MCU, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compared with traditional discrete scheme, IPM wins increasing market with its advantage such as high integration, high reliability, be particularly suitable for the frequency converter of drive motors and various inverter, it is frequency control, metallurgical machinery, electric traction, servo-drive, a kind of desired power level electronic device of frequency-conversion domestic electric appliances.
Because Intelligent Power Module is generally operational in hot environment, and the power device in Intelligent Power Module operationally can send a large amount of heat, cause the junction temperature of power device very high, although circuit substrate has thermolysis, but because the existence of described insulating barrier, cause the overall thermal resistance of described Intelligent Power Module higher.
Intelligent Power Module long-term work at high temperature, seriously can reduce useful life, and the stability of performance can be affected, in extreme circumstances, can cause Intelligent Power Module in the course of the work because of the overheated and out of control blast of internal components, cause casualties and property loss.
Selecting high heat conductive insulating layer and increasing radiator is the main method solving existing Intelligent Power Module heat dissipation problem; But high heat conductive insulating layer on the one hand cost is very high, causes hardness very large because high heat conductive insulating layer employs a large amount of mixing on the other hand thus add the manufacture difficulty of Intelligent Power Module; If in Intelligent Power Module Inner heat sink, by power component attachment on a heat sink, can the cost of raw material be increased on the one hand, add the technology difficulty of Intelligent Power Module on the other hand; If increase radiator in Intelligent Power Module outside, radiator is mounted on the Intelligent Power Module back side, increases application cost on the one hand, adds assembly difficulty on the other hand, all difficulty is manufactured to the application of Intelligent Power Module, be unfavorable for Intelligent Power Module popularizing in civilian occasion.
Utility model content
The utility model is intended to solve the deficiencies in the prior art, provides a kind of Intelligent Power Module of high reliability, can, under the prerequisite using common insulating barrier, make Intelligent Power Module obtain good radiating effect.
The utility model is achieved in that a kind of Intelligent Power Module, comprising:
Substrate, comprises first surface and the second surface relative with this first surface, and described first surface forms gauffer, and described second surface is coated with insulating barrier, and described substrate is papery radiator;
Circuit-wiring layer, is formed at the surface of described insulating barrier;
Circuit element, is disposed in described circuit-wiring layer relevant position;
Metal wire, connects described circuit-wiring layer and circuit element.
Further, described papery radiator is that the insulating material that can tolerate more than 350 DEG C temperature is made.
Further, described papery radiator is that wet type carbon composite functional paper is made.
Further, also comprise pin, described circuit-wiring layer comprises the pin pad of the marginal surface near described substrate, and described pin is connected with described pin pad and stretches out from described substrate.
Further, also comprise sealant, described sealant is coated on the surface of described insulating barrier, described circuit-wiring layer, circuit element and metal wire is covered.
Further, also comprise watertight composition, described watertight composition is covered in the first surface of described substrate.
The beneficial effect of above-mentioned Intelligent Power Module is: the back side due to Intelligent Power Module has heat radiation gauffer, and area of dissipation greatly increases, and insulating barrier can meet power component cooling requirements without the need to using highly heat-conductive material; Radiator structure is paper material, lightweight, and Intelligent Power Module overall weight reduces, and is convenient to long-distance transport and workman's assembling; Because module itself possesses radiator, so in application process, outside without the need to connecing radiator again, reduce application difficulty and application cost, assembling quality is provided.Therefore, Intelligent Power Module of the present utility model, reducing costs simultaneously, improves reliability, and can be designed to and existing Intelligent Power Module function and pinout compatibility, is convenient to applying of Intelligent Power Module.
Accompanying drawing explanation
The vertical view of the Intelligent Power Module that Fig. 1 (A) provides for the utility model embodiment;
Fig. 1 (B) is the profile along X-X ' line in Fig. 1 (A);
Fig. 2 (A), 2 (B) be respectively arrange in the manufacture method of the utility model Intelligent Power Module substrate side-looking and overlook operation schematic diagram;
Fig. 2 (C) is the operation schematic diagram forming insulating barrier 21, copper foil layer 18B on substrate;
Fig. 2 (D) is the operation schematic diagram making wiring;
Fig. 2 (E) is the profile along X-X ' line in Fig. 2 (D);
Fig. 2 (F) is the operation schematic diagram making heat radiation gauffer;
The size indication figure that Fig. 2 (G) is pin;
Fig. 2 (H) is the operation schematic diagram making pin;
Fig. 3 (A), 3 (B) are respectively the side-looking of assembly circuit element, pin on wiring and overlook operation schematic diagram;
Fig. 4 (A), 4 (B) are respectively the side-looking of assembling metal wire and overlook operation schematic diagram;
Fig. 5 is the sealing process schematic diagram of Intelligent Power Module.
Embodiment
In order to make the technical problems to be solved in the utility model, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
Composition graphs 1 (A) and 1 (B), Intelligent Power Module 10 of the present utility model has pin 11, sealant 12, metal wire 15, substrate 17, wiring (i.e. circuit-wiring layer) 18, insulating barrier 21 and circuit element, and this circuit element comprises power component 19 and non-power element 14.Substrate 17 is papery radiator, and substrate 17 comprises first surface and the second surface relative with this first surface, and the first surface of substrate 17 forms a large amount of heat radiation gauffer 17A, has insulating barrier 21 to cover the second surface of substrate 17.Wiring 18 is disposed on the surface of described insulating cement 21, and wiring 18 comprises the pin pad 18A of the marginal surface be arranged near described substrate 17.Metal wire 15, for according to circuit theory diagrams, forms circuit and connects between circuit-wiring layer 18, between circuit element and between circuit-wiring layer 18 and circuit element.Sealant 12 comprises thermosetting resin frame 13 and the thermoplastic resin be infused in the scope of thermosetting resin frame 13 is formed.Seal this circuit and cover all elements on the second surface of described substrate 17 completely.
In the present embodiment, the insulating material that substrate 17 can tolerate more than 350 DEG C high temperature is made.As wet type carbon composite functional paper, graphite can be become by Powdered with the Fiber Shape Carbon Material Compound Machining, and arbitrary shape can be folded into as required, obtain heat radiation gauffer 17A.In order to improve corrosion resistance and waterproof, water-proofing treatment can be carried out in surface, and the first surface namely in substrate 17 covers watertight composition (not shown).In the present embodiment, substrate 17 and heat radiation gauffer 17A are made into integration, wherein substrate 17 shape smooth, described heat radiation gauffer 17A out-of-shape; Substrate 17 and heat radiation gauffer 17A also can for adopting the wet type carbon composite of different-thickness, and the present embodiment employs the mode of different-thickness.Wherein, in order to increase mechanical strength, substrate 17 have employed thicker wet type carbon composite, thickness can be designed to 1.5mm, in order to reduce costs and increase the density of gauffer, heat radiation gauffer 17A have employed thinner wet type carbon composite, and thickness can be designed to 0.5mm.At this, the one side that substrate 17 has a heat radiation gauffer 17A is called the back side (first surface) of substrate 17, and opposite face is called the surface (second surface) of substrate 17.
In practical application, heat radiation gauffer 17A can not the back side of covered substrate 17 completely, flows out the smooth position of at least 2mm at the edge needs at the back side of substrate 17, and have the through hole 16 of diameter at least 1mm at the rectangle minor face of substrate 17.
Insulating barrier 21 adopts based on conventional insulating material, can add the doping such as silicon dioxide, silicon nitride, carborundum to improve thermal conductivity, at this, doping can be spherical or dihedral, by hot pressing mode, be pressed together on the surface of substrate 17, and make to expose in through hole 16 position of substrate 17.
Wiring 18 is made up of metals such as copper, be formed at the relevant position (this position is according to schematic diagram design) on insulating barrier 21, according to power needs, the thickness of 0.035mm or 0.07mm etc. can be designed to, for general Intelligent Power Module, pay the utmost attention to and be designed to 0.07mm, in the present embodiment, adopt the thickness of 0.07mm.In addition, at the edge of insulating barrier 21, be formed with the pin pad 18A be made up of wiring 18.At this, multiple pin pad 18A aiming at arrangement is set near insulating barrier 21, according to function needs, multiple pin pad 18A aiming at arrangement also can be set near multiple limits of insulating barrier 21.
Power component 19 and non-power element 14 are fixed on circuit wiring 18 being formed regulation.At this, power component 19 adopts the elements such as IGBT pipe, high-voltage MOSFET pipe, high pressure FRD pipe, and power component 19 is connected with wiring 18 grade by metal wire 15; Non-power element 14 adopts active element or the passive components such as electric capacity or resistance such as integrated circuit, transistor or diode, and the active element etc. installed that faces up is connected with wiring 18 by metal wire 15.
Metal wire 15 can be aluminum steel, gold thread or copper cash, surely making between each power component 19 by nation, between each non-power element 14, between each wiring 18, set up electrical connection, sometimes also setting up electrical connection for making between pin 11 and wiring 18 or power component 19, non-power element 14.
Pin 11 be fixed on be located at wherein one or more edges of circuit substrate 17 pad 18A on, it has the effect such as carrying out with outside inputting, exporting.At this, be designed to be provided with many pins 11, pin 11 and pin pad 18A, by the electrical binding agent welding of the conductions such as scolding tin, make pin 11 be connected with described pin pad 18A and stretch out from substrate 17.Pin 11 generally adopts the metals such as copper to make, and copper surface forms one deck nickeltin layer by chemical plating and plating, and the thickness of alloy-layer is generally 5 μm, and coating can protect copper not to be corroded oxidation, and can improve weldability.
Thermosetting resin frame 13 is formed by transfer die mode is molded, and thermosetting resin frame 13 outward flange size is consistent with substrate 17 or more smaller than substrate 17.In application, thermosetting resin frame 13 inward flange and outer peripheral distance are not less than 1.5mm, and at thermosetting resin frame 13 rectangle minor face place, have the through hole that the lead to the hole site of diameter and substrate 17, diameter are consistent.
Sealant 12 injects mould mode by thermoplastic resin and is molded.At this, sealant 12 is positioned at all elements on thermosetting resin frame 13 hermetic sealing substrate 17 upper surface completely.Be coated on the surface of insulating barrier 21, circuit-wiring layer 18, circuit element and metal wire 15 is covered.
The back side due to Intelligent Power Module 10 has heat radiation gauffer 17A, and area of dissipation greatly increases, and insulating barrier 21 can meet power component cooling requirements without the need to using highly heat-conductive material; Radiator structure is paper material, lightweight, and Intelligent Power Module 10 overall weight reduces, and is convenient to long-distance transport and workman's assembling; Because module itself possesses radiator, so in application process, outside without the need to connecing radiator again, reduce application difficulty and application cost, assembling quality is provided.Therefore, Intelligent Power Module 10 of the present utility model, reducing costs simultaneously, improves reliability, and can be designed to and existing Intelligent Power Module function and pinout compatibility, is convenient to applying of Intelligent Power Module.
The manufacture method of the utility model Intelligent Power Module comprises the following steps:
Make the papery radiator as substrate, and form gauffer in the first surface of described substrate, second surface covers insulating barrier, and wherein, described first surface is relative with described second surface;
Circuit-wiring layer is laid in described surface of insulating layer;
Circuit element and pin is arranged in described circuit-wiring layer relevant position;
Metal wire is utilized to connect described circuit-wiring layer and circuit element;
In the Surface coating sealant of described insulating barrier, described circuit-wiring layer, circuit element and metal wire are covered.
In one embodiment, the step in the Surface coating sealant of described insulating barrier is specially:
Around the surface of described insulating barrier, thermosetting resin frame is set;
Thermoplastic resin is injected to seal described circuit-wiring layer, circuit element and metal wire in the scope of described thermosetting resin frame.
Preferably, the first surface being also included in described substrate is arranged the step of watertight composition.
Preferably, described utilize metal wire connect the step of described circuit-wiring layer and circuit element before further comprising the steps of:
Described circuit element is welded on described wiring becomes by Reflow Soldering;
Remove the scaling powder remaining in described insulating barrier.
The manufacture method of Intelligent Power Module forms wiring and completes orderly processing on papery radiator, and the lighter radiator of weight requires low to adding man-hour carrier used, and location easily, reduces manufacturing cost, improves process qualification rate; Save operation power component being mounted Inner heat sink, reduce equipment investment expense.
The details of each operation below illustrated.
First operation:
With reference to the vertical view that figure 2 (A) and Fig. 2 (B), Fig. 2 (A) are substrate, Fig. 2 (B) is the profile along X-X ' line in Fig. 2 (A).
The sizeable substrate 17 of circuit layout design as required, for general Intelligent Power Module, the size of a piece can choose 64mm × 30mm, and thickness is 1.5mm, carries out as applied the corrosion protection of marine glue, water-proofing treatment two sides.
With reference to figure 2 (C), use and there is insulating material and the copper material of dihedral or spherical doping, by while hot pressing mode, make insulating material be formed at the surface of substrate 17 and be formed at insulating barrier 21 surface as copper foil layer 18B as insulating barrier 21, copper material.At this, in order to improve voltage endurance, the thickness of insulating barrier 21 can be designed as 110 μm, and in order to improve heat dissipation characteristics, the thickness of insulating barrier 21 can be designed as 70 μm.At this, in order to improve through-current capability, the thickness of copper foil layer 18B can be designed to 0.07mm, and in order to reduce costs, the thickness of copper foil layer 18B can be designed to 0.035mm or 0.0175mm.
With reference to figure 2 (D) and Fig. 2 (E), eroded by the ad-hoc location of copper foil layer 18B, remainder is wiring 18 and pin pad 18A.
With reference to figure 2 (F), the wet type carbon composite that thickness is 0.5mm is used to be formed irregularly shaped, as heat radiation gauffer 17A.Two sides is carried out as applied the corrosion protection of marine glue, water-proofing treatment.
Each pin 11 is by Copper base material, and by the mode of punching press or etching, make as shown in Fig. 2 (G), independent pin units is length C is 25mm, and width K is 1.5mm, and thickness H is the strip of 1mm; In the present embodiment, for ease of assembling, also wherein the radian of 90 ° is suppressed in one end at pin units, as shown in Fig. 2 (H).
Then nickel dam is formed by the method for chemical plating: by nickel salt and inferior sodium phosphate mixed solution, and with the addition of suitable complexing agent, nickel dam is formed on the copper material surface forming given shape, at metallic nickel, there is very strong passivation ability, the very thin passivating film of one deck can be generated rapidly, the corrosion of air, alkali and some acid can be resisted.Nickel plating crystallization is superfine little, and nickel layer thickness is generally 0.1 μm;
Then by hydrosulphate technique; at room temperature the copper material forming shape and nickel dam is immersed in the plating solution with positive tin ion and is energized; form nickeltin layer on nickel dam surface, alloy-layer general control is at 5 μm, and the formation of alloy-layer greatly improves protectiveness and solderability.
Second operation:
In the surface-mounted power component of wiring 18 19, non-power element 14 and the operation at the surface-mounted pin 11 of pin pad 18A.
First, by stencil printer, use steel mesh, tin cream application is carried out to the ad-hoc location of the wiring 18 on insulating barrier 21 and pin pad 18A; At this, climbing tin height to improve, the steel mesh of 0.15mm thickness can be used, in order to reduce the risk of power device 19 and non-power element 14 displacement, the steel mesh of 0.12mm thickness can be used.In the present embodiment, the height of the power component 19 of use is 0.07mm, is the lightest components and parts, so steel mesh thickness selects the steel mesh of 0.12mm thickness.
Then, with reference to end view Fig. 3 (A) and vertical view Fig. 3 (B), substrate 17 is placed on carrier 20, carry out the installation of power component 19, non-power element 14 and pin 11, power component 19 and non-power element 14 directly can be placed on the ad-hoc location of wiring 18, pin 11 then one end will be placed on pad 18A, and the other end needs the fixture 20A on carrier 20 to be fixed, and carrier 20 and fixture 20A are made by materials such as synthesis stones.At this, carrier 20 needs to carry out bottom hollow out process, and heat radiation gauffer 17A is exposed, and substrate 17 dorsal edge at least not contacted with carrier 20 by the position of heat radiation gauffer 17A covering of 1mm plays a supportive role.
Then, be put in substrate 17 on carrier 20 by Reflow Soldering, tin cream solidifies, and power component 19, non-power element 14 and pin 11 are fixed.
3rd operation:
First substrate 17 is put into cleaning machine to clean, the foreign matters such as aluminum steel residual when the scaling powders such as the rosin remained during Reflow Soldering and punching press are cleaned, according to the arrangement density of non-power element 14 at wiring 18, clean by spray ultrasonic or both combine forms carry out.
During cleaning, by mechanical arm clamping pin 11, substrate 17 is placed in rinse bath, and will note not allowing mechanical arm touch substrate 17, because substrate 17 enbrittles and easily deformation, if mechanical arm clamping substrate 17, the vibrations produced when cleaning, easily cause substrate 17 to burst apart.
4th operation:
According to through-current capability needs, select the aluminum steel of suitable diameter as nation's alignment (metal wire 15), for the integrated circuit for signal controlling, also can consider to use gold thread as nation's alignment.In the present embodiment, whole selection aluminum steel, in general, uses the aluminum steel of 350 μm ~ 400 μm surely to the nation of power component 19, the nation of non-power element 14 is used surely to the aluminum steel of 38 μm ~ 200 μm, the nation of radiator 13 is used surely to the aluminum steel of 350 μm ~ 400 μm.
Goods after this operation completes are referring to end view Fig. 4 (A) and vertical view Fig. 4 (B).
5th operation:
Insulating barrier 21 assembles the operation of thermosetting resin frame 13 embedding thermoplastic resin.
First, on insulating barrier 21, the thermosetting resin frame 13 with through hole on rectangle minor face is attached by the non-conductive thermosetting glue such as red glue that insulate, and in oxygen-free environment, the substrate 17 attaching thermosetting resin frame 13 is toasted, baking time should not be less than 2 hours, baking temperature and selection 175 DEG C, make thermosetting resin frame 13 be fixed on insulating barrier 21, see Fig. 5, at this, the height of thermosetting resin frame 13 must higher than the height of metal wire 15.
Then, in thermosetting resin frame 13, inject thermoplastic resin, until thermohardening numerical value frame 13 is filled.The implantation temperature of thermoplastic resin is 150 DEG C, after cooling, and sealant 12, by all elements sealing on substrate 17, only has pin 11 part to expose.
6th operation:
Form through hole 16 and the operation of fixing heat radiation gauffer 17A.Intelligent Power Module completes as goods through operation thus.
With reference to figure 1 (A), by modes such as card punch, in the through hole of thermosetting resin 13, insulating barrier 21 and substrate 17 are punched, form through hole 16.Through hole 16 is for the assembling of Intelligent Power Module 10.
With reference to figure 1 (B), use the high temperature resistant glue of tolerable temperature more than 150 DEG C, heat radiation gauffer 17A is sticked to the back side of substrate 17, at this, heat radiation gauffer 17A can not the back side of covered substrate 17 completely, the distance at least 2mm of the short side edge at the back side of substrate 17, guarantees not formed through hole 16 to block.
Then module is put into testing equipment, carry out conventional electric parameters testing, generally comprise the test events such as dielectric voltage withstand, quiescent dissipation, delay time, test passes person is finished product.
Utilize above-mentioned operation, complete the making of Intelligent Power Module 10.
These are only preferred embodiment of the present utility model, not in order to limit the utility model, all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.

Claims (6)

1. an Intelligent Power Module, is characterized in that, comprising:
Substrate, comprises first surface and the second surface relative with this first surface, and described first surface forms gauffer, and described second surface is coated with insulating barrier, and described substrate is papery radiator;
Circuit-wiring layer, is formed at the surface of described insulating barrier;
Circuit element, is disposed in described circuit-wiring layer relevant position;
Metal wire, connects described circuit-wiring layer and circuit element.
2. Intelligent Power Module as claimed in claim 1, it is characterized in that, described papery radiator is that the insulating material that can tolerate more than 350 DEG C temperature is made.
3. Intelligent Power Module as claimed in claim 1 or 2, it is characterized in that, described papery radiator is that wet type carbon composite functional paper is made.
4. Intelligent Power Module as claimed in claim 1, is characterized in that, also comprise pin, and described circuit-wiring layer comprises the pin pad of the marginal surface near described substrate, and described pin is connected with described pin pad and stretches out from described substrate.
5. Intelligent Power Module as claimed in claim 1, it is characterized in that, also comprise sealant, described sealant is coated on the surface of described insulating barrier, described circuit-wiring layer, circuit element and metal wire is covered.
6. the Intelligent Power Module as described in claim 1 or 5, is characterized in that, also comprises watertight composition, and described watertight composition is covered in the first surface of described substrate.
CN201520166339.9U 2015-03-23 2015-03-23 Intelligent power module Expired - Fee Related CN204596778U (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201520166339.9U CN204596778U (en) 2015-03-23 2015-03-23 Intelligent power module
JP2018500841A JP6500162B2 (en) 2015-03-23 2016-03-23 Intelligent power module and manufacturing method thereof
PCT/CN2016/077143 WO2016150391A1 (en) 2015-03-23 2016-03-23 Smart power module and manufacturing method therefor
US15/559,834 US10615155B2 (en) 2015-03-23 2016-03-23 Intelligent power module and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520166339.9U CN204596778U (en) 2015-03-23 2015-03-23 Intelligent power module

Publications (1)

Publication Number Publication Date
CN204596778U true CN204596778U (en) 2015-08-26

Family

ID=53932902

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520166339.9U Expired - Fee Related CN204596778U (en) 2015-03-23 2015-03-23 Intelligent power module

Country Status (1)

Country Link
CN (1) CN204596778U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016150391A1 (en) * 2015-03-23 2016-09-29 广东美的制冷设备有限公司 Smart power module and manufacturing method therefor
CN112432330A (en) * 2020-11-26 2021-03-02 珠海格力电器股份有限公司 Constant-temperature dehumidification control method and device, electronic equipment and air conditioner

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016150391A1 (en) * 2015-03-23 2016-09-29 广东美的制冷设备有限公司 Smart power module and manufacturing method therefor
US10615155B2 (en) 2015-03-23 2020-04-07 Gd Midea Airconditioning Equipment Co., Ltd. Intelligent power module and manufacturing method thereof
CN112432330A (en) * 2020-11-26 2021-03-02 珠海格力电器股份有限公司 Constant-temperature dehumidification control method and device, electronic equipment and air conditioner
CN112432330B (en) * 2020-11-26 2021-11-16 珠海格力电器股份有限公司 Constant-temperature dehumidification control method and device, electronic equipment and air conditioner

Similar Documents

Publication Publication Date Title
CN204481692U (en) Intelligent power module
CN104112719B (en) Hybrid integrated circuit module and manufacturing method thereof
CN104795374B (en) SPM and its manufacture method
CN104835794A (en) Intelligent power module and method for manufacturing same
CN104767417A (en) Control circuit of intelligent power module, intelligent power module and manufacturing method thereof
CN106024651A (en) Intelligent power module and manufacturing method thereof
CN206116377U (en) Intelligent power module
CN105047623A (en) Intelligent power module and intelligent power module manufacturing method
CN104767396B (en) SPM and its manufacture method
CN104795378B (en) Intelligent power module and its manufacture method
CN204596778U (en) Intelligent power module
CN204559407U (en) Intelligent power module
CN106098652A (en) A kind of SPM and manufacture method thereof
CN104766842A (en) Intelligent power module and manufacturing method thereof
CN104752373A (en) Intelligent power module and manufacture method thereof
CN204558448U (en) Intelligent power module
CN104795388A (en) Intelligent power module and manufacturing method thereof
CN104795974A (en) Intelligent power module, control circuit of intelligent power module and manufacturing method of intelligent power module
CN204558457U (en) Power model
CN106158801A (en) A kind of SPM and manufacture method thereof
CN106298698A (en) A kind of SPM and manufacture method thereof
CN106024652A (en) Intelligent power module and manufacturing method thereof
CN203481218U (en) Intelligent power module
CN205881892U (en) Intelligent power module
CN205900526U (en) Intelligent power module

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150826