CN107293597A - Surface mount rectifier part - Google Patents
Surface mount rectifier part Download PDFInfo
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- CN107293597A CN107293597A CN201610218877.7A CN201610218877A CN107293597A CN 107293597 A CN107293597 A CN 107293597A CN 201610218877 A CN201610218877 A CN 201610218877A CN 107293597 A CN107293597 A CN 107293597A
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- heavily doped
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- lead bar
- backlight unit
- connection sheet
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- 238000003466 welding Methods 0.000 claims abstract description 54
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 229910000679 solder Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000004593 Epoxy Substances 0.000 claims abstract description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 17
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 238000005452 bending Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 description 11
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000001788 irregular Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000010257 thawing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4502—Disposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Rectifiers (AREA)
Abstract
A kind of surface mount rectifier part of the present invention, including the first lead bar in epoxy packages body, the second lead bar, connection sheet and diode chip for backlight unit, the first lead bar one end is the Support being connected with diode chip for backlight unit, and described diode chip for backlight unit one end is electrically connected by solder(ing) paste with the Support；Heavily doped N-type region on the inside of the insulation passivation protection layer is provided with a U-shaped groove; this heavily doped N-type area lower surface and there is a downward lug boss immediately below the U-shaped groove, the surface covering of the heavily doped N-type area exposed and U-shaped groove as electrode the first metal layer；Second welding ends of the connection sheet is to be alternately arranged the wavy surfaces constituted by several crest faces and trough face.Surface mount rectifier part of the present invention adds contact area, and connection sheet will add more than 65% with wire contacts area, and diode component is improved with PCB weld strengths, so as to improve tensile strength and improve electrical property.
Description
Technical field
The present invention relates to a kind of rectifying device, more particularly to a kind of surface mount rectifier part.
Background technology
Surface mount rectifier part is a kind of electronic device for having and unidirectionally conducting electric current, and existing surface mount rectifier part mainly deposits following technical problem：On the one hand, together with the internal material connected mode of device is mainly melted and is securely attached to chip with lead at high temperature by weld tabs, but copper lead and scolding tin are difficult to accomplish that 100% merges, usual chip is 85% with connection sheet efficient weld area, and this one end of lead only has 60% or so, cause high current by when, CURRENT DISTRIBUTION is uneven, reduces the ability that product bears surge.
" welding " is the critical process of rectifying device production, particularly diode-like rectifying device, be designed into whether chip and conductive lead wire position carefully and neatly done, whether weld tabs repeats and put, furnace temperature temperature design it is whether reasonable etc., the defective products that welding is produced accounts for defective products total amount and reaches more than 80%, whether welding link handles the proper final quality for directly affecting product, and this project carries out a series of improvement in rectifying device product design and production technology.Produce diode rectifier of new generation.
On the other hand, in addition to high power device, common rectifying device chip is square, and weld tabs is circle.In by high-temperature soldering continuous tunnel furnace, weld tabs is that thawing is liquid, and chip and conductive lead wire are connected respectively.Because irregular shape is presented in weld tabs after high temperature, four back gauges after thawing with chip are respectively less than 0.2mm, once chip and weld tabs position have slight inclination or welding temperature and speed of welding to have slight deviation, the edge for flowing to chip drops in scolding tin, so as to touch the another side of chip, the scolding tin flowed through will become a wire, and rectifying device is directly changed into wire, forms short circuit and can not use；Chip edge is not exposed to even if another situation is scolding tin, client produces high temperature in use makes weld tabs thawing also have above-mentioned situation, causes client's loss increasing.
The content of the invention
It is an object of the present invention to provide a kind of surface mount rectifier part, the surface mount rectifier part adds contact area, connection sheet will add more than 65% with wire contacts area, and diode component is improved with PCB weld strengths, so as to improve tensile strength and improve electrical property.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：A kind of surface mount rectifier part, including the first lead bar in epoxy packages body, the second lead bar, connection sheet and diode chip for backlight unit, the first lead bar one end is the Support being connected with diode chip for backlight unit, described diode chip for backlight unit one end is electrically connected by solder(ing) paste with the Support, the first lead bar other end is pin area, the pin area of the first lead bar as the rectifier electric current transmission end；
Described second lead bar one end is the weld zone being connected with the first welding ends of the connection sheet, and the second lead bar other end is pin area, the pin area of the second lead bar as the rectifier electric current transmission end；The welding ends of connection sheet second is electrically connected with the diode chip for backlight unit other end by solder(ing) paste；
The diode chip for backlight unit includes the heavily doped P-type monocrystalline silicon piece that surface has heavily doped N-type area, this heavily doped N-type area is contacted with heavily doped P-type monocrystalline silicon piece, heavily doped N-type area surrounding has groove, and this groove is located at heavily doped P-type monocrystalline silicon piece and heavily doped N-type area surrounding and the middle part for extending to heavily doped P-type monocrystalline silicon piece；The surface of the groove is extended to the fringe region on heavily doped N-type area surface by channel bottom covered with insulation passivation protection layer, this insulation passivation protection floor, and heavily doped P-type area surface covers the second metal layer as another electrode；
Heavily doped N-type region on the inside of the insulation passivation protection layer is provided with a U-shaped groove; this heavily doped N-type area lower surface and there is a downward lug boss immediately below the U-shaped groove, the surface covering of the heavily doped N-type area exposed and U-shaped groove as electrode the first metal layer；
Second welding ends of the connection sheet is is alternately arranged the wavy surfaces constituted by several crest faces and trough face, and the wavy surfaces are electrically connected by the solder(ing) paste with diode chip for backlight unit, and the wavy surfaces end of the connection sheet is located at directly over U-shaped groove.
Further improved scheme is as follows in above-mentioned technical proposal：
1. in such scheme, region is provided with one first bending part between the Support and pin area of the first lead bar, so that the Support of the first lead bar is less than pin area；
Region is provided with one second bending part between the weld zone and pin area of the second lead bar, so that the weld zone of the second lead bar is less than pin area；
The 3rd bending part is provided between the first welding ends and the second welding ends of the connection sheet, so that the first welding ends is less than the second welding ends.
2. in such scheme, the weld zone both sides of the second lead bar are provided with block.
3. in such scheme, the area of the weld zone of the second lead bar is more than the area of first welding ends.
Because above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
1. surface mount rectifier part of the present invention, second welding ends of its connection sheet is to be alternately arranged the wavy surfaces constituted by several crest faces and trough face, the wavy surfaces are electrically connected by the solder(ing) paste with diode chip for backlight unit, the wavy surfaces end of the connection sheet is located at directly over U-shaped groove, 3 ~ 6 lines can be designed according to the specification difference of product, in welding process, connection sheet becomes the liquid of flowing in the presence of high temperature, it is filled into wave zone, add contact area, connection sheet will add more than 65% with wire contacts area, diode component is improved with PCB weld strengths, so as to improve tensile strength, electrical property is improved, do not changing lead, in the case of chip and bulk area, the wire length of increase by 10% can solve the problem of long-standing problem welding procedure only in lead design, product profit, which is created, under the only cost of increase by 1.3% improves 7 percentage points；Simultaneously because using new lead pad, using this technique, the welding procedure level for making discrete device crucial is greatly improved, product is when bearing unstable or high current, and device is in good use state all the time；Secondly, it uses the novel lead wire pad of this Project design, it can make progressively to be absorbed from the outside hard draw power for being delivered to weld zone, it ensure that pad from mechanical damage, the defective products such as any internal cleavage will not occur in process of production, complaint of the client to chip cracks drops to no more than 2 from annual 8.
2. surface mount rectifier part of the present invention; its close to it is described insulation passivation protection layer on the inside of heavily doped N-type region be provided with a U-shaped groove; this heavily doped N-type area lower surface and there is a downward lug boss immediately below the U-shaped groove, the surface covering of the heavily doped N-type area exposed and U-shaped groove as electrode the first metal layer；Circular weld tabs starts to melt and in irregular in the welding tunnel more than 260 DEG C, beginning flows to the edge of chip under the compressing of conductive lead wire, in the case where weld interval and temperature can not definitely control, scolding tin flows through the external protection formation " Xi Qiao " of chip, chip provided with guiding gutter now starts to absorb the weld tabs melted, because guiding gutter is annular design, the unnecessary scolding tin of any direction will all enter the guiding gutter of welding, and there is good mobility in guiding gutter, unnecessary scolding tin can be averagely allocated, it ensure that uniform welding, add the intensity of welding, reused unnecessary scolding tin, bonding area at least adds 15%, welding yield will also lift 6 percentage points.2..Devised and weld tabs area more close hexagonal chips for high-power rectifying device, it is ensured that maximum efficient weld area, the overvoltage protection ability of chip is given full play to, the width and depth of U-shaped guiding gutter are individually designed according to the size of chip area.By testing certification, because solder side has obtained more than 13% expansion, chip area is set to drop to 60-65mil from existing 80mil, in the case where not influenceing overvoltage protection ability, chip cost have dropped 11%, and high power device welding machine yield reaches more than 97%.
Brief description of the drawings
Accompanying drawing 1 is surface mount rectifier part structural representation of the present invention；
Accompanying drawing 2 is diode chip structure schematic diagram in surface mount rectifier part of the present invention.
In the figures above：1st, the first lead bar；2nd, the second lead bar；3rd, connection sheet；31st, the first welding ends；32nd, the second welding ends；4th, diode chip for backlight unit；41st, heavily doped P-type monocrystalline silicon piece；42nd, heavily doped N-type area；43rd, lug boss；44th, groove；45th, insulation passivation protection layer；46th, the first metal layer；47th, second metal layer；5th, Support；61st, pin area；62nd, pin area；7th, weld zone；8th, block；9th, the first bending part；10th, the second bending part；11st, the 3rd bending part；12nd, epoxy packages body.
Embodiment
Below in conjunction with the accompanying drawings and embodiment the invention will be further described：
Embodiment 1：A kind of surface mount rectifier part, including the first lead bar 1 in epoxy packages body 12, the second lead bar 2, connection sheet 3 and diode chip for backlight unit 4, the one end of first lead bar 1 is the Support 5 being connected with diode chip for backlight unit 4, described one end of diode chip for backlight unit 4 is electrically connected by solder(ing) paste with the Support 5, the other end of first lead bar 1 is pin area 61, the pin area 61 of the first lead bar 1 as the rectifier electric current transmission end；
Described one end of second lead bar 2 is the weld zone 7 being connected with the first welding ends 31 of the connection sheet 3, and the other end of the second lead bar 2 is pin area 62, the pin area 62 of the second lead bar 2 as the rectifier electric current transmission end；The welding ends 32 of connection sheet 3 second is electrically connected with the other end of diode chip for backlight unit 4 by solder(ing) paste；
The diode chip for backlight unit 4 includes the heavily doped P-type monocrystalline silicon piece 41 that surface has heavily doped N-type area 42, this heavily doped N-type area 42 is contacted with heavily doped P-type monocrystalline silicon piece 41, the surrounding of heavily doped N-type area 42 has groove 44, and this groove 44 is located at heavily doped P-type monocrystalline silicon piece 41 and the surrounding of heavily doped N-type area 42 and the middle part for extending to heavily doped P-type monocrystalline silicon piece 41；The surface of the groove 44 is covered with insulation passivation protection layer 45, and this insulation passivation protection floor 45 is extended to the fringe region on the surface of heavily doped N-type area 42 by the bottom of groove 44, and the surface of heavily doped P-type area 41 covers the second metal layer 47 as another electrode；
The region of heavily doped N-type area 42 close to the inner side of insulation passivation protection floor 45 is provided with a U-shaped groove; this lower surface of heavily doped N-type area 42 and there is a downward lug boss 43 immediately below the U-shaped groove, the surface covering of the heavily doped N-type area 42 exposed and U-shaped groove as electrode the first metal layer 46；
Second welding ends 32 of the connection sheet 3 is to be alternately arranged the wavy surfaces constituted by several crest faces and trough face, the wavy surfaces are electrically connected by the solder(ing) paste with diode chip for backlight unit 4, and the wavy surfaces end of the connection sheet 3 is located at directly over U-shaped groove.
Region is provided with one first bending part 9 between the Support 5 and pin area 61 of above-mentioned first lead bar 1, so that the Support 5 of the first lead bar 1 is less than pin area 61；
The area of the weld zone 7 of above-mentioned second lead bar 2 is more than the area of first welding ends 31.
Embodiment 2：A kind of surface mount rectifier part, including the first lead bar 1 in epoxy packages body 12, the second lead bar 2, connection sheet 3 and diode chip for backlight unit 4, the one end of first lead bar 1 is the Support 5 being connected with diode chip for backlight unit 4, described one end of diode chip for backlight unit 4 is electrically connected by solder(ing) paste with the Support 5, the other end of first lead bar 1 is pin area 61, the pin area 61 of the first lead bar 1 as the rectifier electric current transmission end；
Described one end of second lead bar 2 is the weld zone 7 being connected with the first welding ends 31 of the connection sheet 3, and the other end of the second lead bar 2 is pin area 62, the pin area 62 of the second lead bar 2 as the rectifier electric current transmission end；The welding ends 32 of connection sheet 3 second is electrically connected with the other end of diode chip for backlight unit 4 by solder(ing) paste；
The diode chip for backlight unit 4 includes the heavily doped P-type monocrystalline silicon piece 41 that surface has heavily doped N-type area 42, this heavily doped N-type area 42 is contacted with heavily doped P-type monocrystalline silicon piece 41, the surrounding of heavily doped N-type area 42 has groove 44, and this groove 44 is located at heavily doped P-type monocrystalline silicon piece 41 and the surrounding of heavily doped N-type area 42 and the middle part for extending to heavily doped P-type monocrystalline silicon piece 41；The surface of the groove 44 is covered with insulation passivation protection layer 45, and this insulation passivation protection floor 45 is extended to the fringe region on the surface of heavily doped N-type area 42 by the bottom of groove 44, and the surface of heavily doped P-type area 41 covers the second metal layer 47 as another electrode；
The region of heavily doped N-type area 42 close to the inner side of insulation passivation protection floor 45 is provided with a U-shaped groove; this lower surface of heavily doped N-type area 42 and there is a downward lug boss 43 immediately below the U-shaped groove, the surface covering of the heavily doped N-type area 42 exposed and U-shaped groove as electrode the first metal layer 46；
Second welding ends 32 of the connection sheet 3 is to be alternately arranged the wavy surfaces constituted by several crest faces and trough face, the wavy surfaces are electrically connected by the solder(ing) paste with diode chip for backlight unit 4, and the wavy surfaces end of the connection sheet 3 is located at directly over U-shaped groove.
Region is provided with one first bending part 9 between the Support 5 and pin area 61 of above-mentioned first lead bar 1, so that the Support 5 of the first lead bar 1 is less than pin area 61；
Region is provided with one second bending part 10 between the weld zone 7 and pin area 62 of the second lead bar 2, so that the weld zone 7 of the second lead bar 2 is less than pin area 62；
The 3rd bending part 11 is provided between the first welding ends 31 and the second welding ends 32 of the connection sheet 3, so that the first welding ends is less than the second welding ends.
The both sides of weld zone 7 of above-mentioned second lead bar 2 are provided with block 8.
During using above-mentioned surface mount rectifier part, its, 3 ~ 6 lines can be designed according to the specification difference of product, in welding process, connection sheet becomes the liquid of flowing in the presence of high temperature, it is filled into wave zone, add contact area, connection sheet will add more than 65% with wire contacts area, diode component is improved with PCB weld strengths, so as to improve tensile strength, electrical property is improved, do not changing lead, in the case of chip and bulk area, the wire length of increase by 10% can solve the problem of long-standing problem welding procedure only in lead design, product profit, which is created, under the only cost of increase by 1.3% improves 7 percentage points；Simultaneously because using new lead pad, using this technique, the welding procedure level for making discrete device crucial is greatly improved, product is when bearing unstable or high current, and device is in good use state all the time；Secondly, it uses the novel lead wire pad of this Project design, it can make progressively to be absorbed from the outside hard draw power for being delivered to weld zone, it ensure that pad from mechanical damage, the defective products such as any internal cleavage will not occur in process of production, complaint of the client to chip cracks drops to no more than 2 from annual 8；Again, its circular weld tabs starts to melt and in irregular in the welding tunnel more than 260 DEG C, beginning flows to the edge of chip under the compressing of conductive lead wire, in the case where weld interval and temperature can not definitely control, scolding tin flows through the external protection formation " Xi Qiao " of chip, chip provided with guiding gutter now starts to absorb the weld tabs melted, because guiding gutter is annular design, the unnecessary scolding tin of any direction will all enter the guiding gutter of welding, and there is good mobility in guiding gutter, unnecessary scolding tin can be averagely allocated, it ensure that uniform welding, add the intensity of welding, reused unnecessary scolding tin, bonding area at least adds 15%, welding yield will also lift 6 percentage points.2..Devised and weld tabs area more close hexagonal chips for high-power rectifying device, it is ensured that maximum efficient weld area, the overvoltage protection ability of chip is given full play to, the width and depth of U-shaped guiding gutter are individually designed according to the size of chip area.By testing certification, because solder side has obtained more than 13% expansion, chip area is set to drop to 60-65mil from existing 80mil, in the case where not influenceing overvoltage protection ability, chip cost have dropped 11%, and high power device welding machine yield reaches more than 97%.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art to understand present disclosure and implement according to this, it is not intended to limit the scope of the present invention.Any equivalent change or modification in accordance with the spirit of the invention, should all be included within the scope of the present invention.
Claims (4)
1. a kind of surface mount rectifier part, including positioned at epoxy packages body（12）The first interior lead bar（1）, the second lead bar（2）, connection sheet（3）And diode chip for backlight unit（4）, the first lead bar（1）One end is and diode chip for backlight unit（4）The Support of connection（5）, the diode chip for backlight unit（4）One end passes through solder(ing) paste and the Support（5）Electrical connection, the first lead bar（1）The other end is pin area（61）, the first lead bar（1）Pin area（61）It is used as the electric current transmission end of the rectifier；
The second lead bar（2）One end is and the connection sheet（3）The first welding ends（31）The weld zone of connection（7）, the second lead bar（2）The other end is pin area（62）, the second lead bar（2）Pin area（62）It is used as the electric current transmission end of the rectifier；The connection sheet（3）Second welding ends（32）With diode chip for backlight unit（4）The other end is electrically connected by solder(ing) paste；
The diode chip for backlight unit（4）There is heavily doped N-type area including surface（42）Heavily doped P-type monocrystalline silicon piece（41）, this heavily doped N-type area（42）With heavily doped P-type monocrystalline silicon piece（41）Contact, heavily doped N-type area（42）Surrounding has groove（44）, this groove（44）Positioned at heavily doped P-type monocrystalline silicon piece（41）With heavily doped N-type area（42）Surrounding simultaneously extends to heavily doped P-type monocrystalline silicon piece（41）Middle part；The groove（44）Surface covered with insulation passivation protection layer（45）, this insulation passivation protection layer（45）By groove（44）Bottom extends to heavily doped N-type area（42）The fringe region on surface, heavily doped P-type area（41）Surface covers the second metal layer as another electrode（47）；
It is characterized in that：Close to the insulation passivation protection layer（45）The heavily doped N-type area of inner side（42）Region is provided with a U-shaped groove（48）, this heavily doped N-type area（42）Lower surface and positioned at U-shaped groove（48）Underface has a downward lug boss（43）, the heavily doped N-type area exposed（42）With U-shaped groove（48）Surface covering as electrode the first metal layer（46）；
The connection sheet（3）The second welding ends（32）For by several crest faces（13）With trough face（14）The wavy surfaces of composition are alternately arranged, the wavy surfaces pass through scolding tin layer of paste（15）With diode chip for backlight unit（4）Electrical connection, the connection sheet（3）Wavy surfaces end be located at U-shaped groove（48）Surface.
2. surface mount rectifier part according to claim 1, it is characterised in that：The first lead bar（1）Support（5）With pin area（61）Between region be provided with one first bending part（9）, so that the first lead bar（1）Support（5）Less than pin area（61）；
The second lead bar（2）Weld zone（7）With pin area（62）Between region be provided with one second bending part（10）, so that the second lead bar（2）Weld zone（7）Less than pin area（62）；
The connection sheet（3）The first welding ends（31）With the second welding ends（32）Between be provided with the 3rd bending part（11）, so that the first welding ends is less than the second welding ends.
3. surface mount rectifier part according to claim 1, it is characterised in that：The second lead bar（2）Weld zone（7）Both sides are provided with block（8）.
4. surface mount rectifier part according to claim 1, it is characterised in that：The second lead bar（2）Weld zone（7）Area be more than first welding ends（31）Area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610218877.7A CN107293597A (en) | 2016-04-11 | 2016-04-11 | Surface mount rectifier part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610218877.7A CN107293597A (en) | 2016-04-11 | 2016-04-11 | Surface mount rectifier part |
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| CN107293597A true CN107293597A (en) | 2017-10-24 |
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| CN201610218877.7A Pending CN107293597A (en) | 2016-04-11 | 2016-04-11 | Surface mount rectifier part |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107658346A (en) * | 2017-10-26 | 2018-02-02 | 捷捷半导体有限公司 | A kind of high junction temperature avalanche diode chip assembly and its manufacture method |
| CN108376714A (en) * | 2018-03-01 | 2018-08-07 | 山东沂光集成电路有限公司 | A kind of SMA stamp-mounting-paper diodes |
| CN110085680A (en) * | 2019-05-15 | 2019-08-02 | 苏州达晶微电子有限公司 | Surface-adhered type TVS device |
| CN114709199A (en) * | 2022-06-07 | 2022-07-05 | 东莞市中汇瑞德电子股份有限公司 | Relay back-voltage suppression module packaging structure, packaging method and follow current circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107658346A (en) * | 2017-10-26 | 2018-02-02 | 捷捷半导体有限公司 | A kind of high junction temperature avalanche diode chip assembly and its manufacture method |
| CN108376714A (en) * | 2018-03-01 | 2018-08-07 | 山东沂光集成电路有限公司 | A kind of SMA stamp-mounting-paper diodes |
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| CN114709199A (en) * | 2022-06-07 | 2022-07-05 | 东莞市中汇瑞德电子股份有限公司 | Relay back-voltage suppression module packaging structure, packaging method and follow current circuit |
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