CN106425825A - New grinding and polishing method for super hard and brittle workpiece - Google Patents
New grinding and polishing method for super hard and brittle workpiece Download PDFInfo
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- CN106425825A CN106425825A CN201610857938.4A CN201610857938A CN106425825A CN 106425825 A CN106425825 A CN 106425825A CN 201610857938 A CN201610857938 A CN 201610857938A CN 106425825 A CN106425825 A CN 106425825A
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- grinding
- polishing
- abrasive
- aggregation
- powder
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- 238000005498 polishing Methods 0.000 title claims abstract description 90
- 238000000227 grinding Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000010432 diamond Substances 0.000 claims abstract description 33
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 25
- 238000003754 machining Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 238000004220 aggregation Methods 0.000 claims description 40
- 230000002776 aggregation Effects 0.000 claims description 40
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 25
- 239000003082 abrasive agent Substances 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 21
- 239000010980 sapphire Substances 0.000 claims description 21
- 238000005245 sintering Methods 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
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- 230000008023 solidification Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 238000000465 moulding Methods 0.000 claims description 9
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- 238000004026 adhesive bonding Methods 0.000 claims description 7
- 238000007517 polishing process Methods 0.000 claims description 7
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- 239000003607 modifier Substances 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002671 adjuvant Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 239000006061 abrasive grain Substances 0.000 claims description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 3
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- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- SOIAEOTUSNFHMI-UHFFFAOYSA-N 2-(2-aminoethylamino)ethane-1,1-diol Chemical compound NCCNCC(O)O SOIAEOTUSNFHMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052580 B4C Inorganic materials 0.000 claims description 2
- 239000005711 Benzoic acid Substances 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 230000001133 acceleration Effects 0.000 claims description 2
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 235000010233 benzoic acid Nutrition 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000292 calcium oxide Substances 0.000 claims description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- 238000001723 curing Methods 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 claims description 2
- 229910001950 potassium oxide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910001948 sodium oxide Inorganic materials 0.000 claims description 2
- 239000000052 vinegar Substances 0.000 claims description 2
- 235000021419 vinegar Nutrition 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims 3
- 230000000694 effects Effects 0.000 claims 3
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
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- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- UWIULCYKVGIOPW-UHFFFAOYSA-N Glycolone Natural products CCOC1=C(CC=CC)C(=O)N(C)c2c(O)cccc12 UWIULCYKVGIOPW-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000011354 acetal resin Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
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- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
A new grinding and polishing method for a super hard and brittle workpiece is characterized by mainly comprising the steps that firstly, diamond abrasive aggregate is prepared; secondly, pressing and forming are performed; and thirdly, grinding and polishing liquid is prepared to grind and polish the workpiece; a chemical active component added in the grinding and polishing liquid is a pH regulating agent or active ions; and a proper amount of small particle auxiliary abrasive is added in the grinding liquid to make a grinding and polishing pad uniformly abraded, and a stable material removing rate is guaranteed. The method has the beneficial effects of being simple in preparation, short in process route, high in rate of finished products, low in cost, stable in machining performance and the like.
Description
Technical field
The present invention relates to a kind of machining process, the Mohs' hardness such as especially a kind of carborundum, sapphire exceedes in 9
The machining process of superhard crisp workpiece, the grinding and polishing new method of specifically a kind of superhard crisp workpiece.
Background technology
The fragile materials such as carborundum, sapphire, its Mohs' hardness, more than 9, is class super hard and brittle materials.There is good machine
Tool performance, stable physical and chemical performance and excellent optical property, in machinery, optics, information, Aero-Space and weaponry
It is widely used etc. dual-use field tool.But, because the superhard materials such as carborundum, sapphire have hardness height, fragility
Big feature, conventional grinding and polishing working (machining) efficiency extremely low it is difficult to carry out large batch of efficient production.Therefore, how to improve carbon
The grinding and polishing efficiency of the super hard and brittle materials such as SiClx, sapphire becomes one of study hotspot of modern Ultraprecision Machining.
From the beginning of mid-twentieth century, domestic and international researcher has started to the grinding and polishing to materials such as carborundum, sapphires
Technology is studied.Currently form and defined several processing technique：Solid using free abrasive, diamond pellet and resin base
Knot abrasive pad is ground polishing.During using free abrasive grinding and polishing, the cutting mechanisms of its material remove for three-body-abrasion, grind
Grinding and polishing light efficiency is low, sub-surface damage layer is big, the utilization rate of abrasive material is low, the shortcomings of high cost；Thrown using diamond pellet slice lapping
Light time, abrasive material self-sharpening is poor, chip space is little, workpiece easily scratches；When polishing is ground using resin base concretion abrasive pad
Exist abrasive material self-sharpening can poor, the easy glazing of polishing later stage mat surface, grinding and polishing stabilised efficiency poor.
The institutions conduct such as Nanjing Aero-Space University solidified abrasive grinding polishes the research of the workpiece such as sapphire, carborundum
Work it is believed that：In the course of processing, due to the superhard crisp feature of workpiece, workpiece depth is little, abrasive particle is easily blunt to lead to abrasive particle incision
Change, passivation abrasive particle difficult for drop-off, and abrasive dust is tiny, leads to binding agent to wear and tear the reasons such as slow and self-correction scarce capacity, is to show
Have that concretion abrasive pad grinding and polishing efficiency is low, working (machining) efficiency is unstable, particularly later stage efficiency declines key reason faster, such as
The stable penetraction depth of what raising abrasive particle and sharp ability are to solve the key point that its efficient stable produces.Therefore, develop one
Kind process is simple, working (machining) efficiency are efficiently stable, abrasive material self-sharpening is strong, be applied to carborundum, the grinding of sapphire super hard and brittle materials
Polishing new technique is extremely urgent.
Content of the invention
The present invention seeks to for not high the asking of working (machining) efficiency present in existing super hard and brittle materials grinding and polishing process
Topic, invents that a kind of abrasive material self-sharpening is strong, process is simple, low cost, working (machining) efficiency stability and high efficiency, is applied to carborundum, sapphire
Deng the grinding and polishing new method of superhard material, it obtains, by sintering little particle abrasive material, the aggregation abrasive material that self-sharpening can be excellent,
Then this sintering aggregation is solidified in matrix making grinding and polishing pad, and in grinding and polishing liquid add acid-base modifier and
Chemical active ingredient, to improve the grinding and polishing performance on super hard and brittle materials surface, adds little particle auxiliary in grinding and polishing liquid simultaneously
Grinding aid material, to guarantee grinding and polishing pad even wearing it is ensured that stable material removal rate.The method exceedes for Mohs' hardness
9 superhard crisp monocrystal, polycrystal, various ceramic material and composite are ground polishing, and mainly include carborundum, indigo plant
The materials such as gem.
The technical scheme is that：
A kind of grinding and polishing new method being applied to the superhard materials such as carborundum, sapphire, comprises the steps：
(1) the abrasive material of presintering and sintering adjuvant according to mass percent mix homogeneously；It is then passed through dry, gluing, system
Grain, removing glue, sinter molding, the again step such as screening, obtain the aggregation abrasive material sintering；The abrasive material raw material of wherein sintering is Buddha's warrior attendant
Stone monocrystalline or its broken material；The weight ratio of the abrasive material of presintering and sintering adjuvant is for 60-70：40-30.
(2) aggregation preparing abrasive material is blended in pour in mould with bonding agent by a certain percentage and is solidified, or
The abrasive agglomerates preparing are mixed with binding agent certain proportion and pour mould into and be hot pressed into through forcing press or vulcanizer by person
Type, or the abrasive agglomerates preparing certain proportion is mixed to pour into and prepares mould with metal dust or vitrified bonding
It is sintered molding in tool.The mode of solidification can be light-initiated solidification, thermal initiation solidification；Sintering or solidification be prepared from grind
The shape of mill polishing pad or disk upper process can be the combination of one or more of cylinder, prism, frustum of a cone etc.；Projection
Surface can be distributed the chip spaces such as hole or soluble additive；The arrangement pattern of projection can be annular, spiral type, pendulum
Linear, ray shape, point formation etc..
(3) grinding and polishing pad preparing is pasted onto on polisher lapper, then according to workpiece, prepares grinding and polishing liquid
Workpiece is ground polish.The chemical active ingredient adding in grinding and polishing liquid, can be acid-base modifier or one
A little active ions；Add appropriate little particle auxiliary abrasive in lapping liquid, make grinding and polishing pad uniform wear it is ensured that stable material
Material removal rate；
（4）Abrasive polishing process contain one grinding step with together with polishing process.
Described super hard and brittle materials are the monocrystal more than 9 for the Mohs' hardness, polycrystal, various ceramic material and composite wood
Material, including but not limited to carborundum, sapphire.
Described grinding and polishing pad by diamond aggregation abrasive material to solidify, to sinter, welding fabrication mode is solidified in matrix
It is prepared from；Matrix is resin base, ceramic base or Metal Substrate；Adopt thermal initiation solidification, light solid using curing mode during resin base
Change mode；During using pottery or Metal Substrate, need first base, then be sintered and bond.
Described resin is：In Pioloform, polyvinyl acetal, poly- carbonic acid vinegar, polyacrylate, epoxy resin, Polyethylene Glycol one
Plant or multiple combination, its content is the 30 ~ 80% of gross mass.
Described ceramic base is：Silicon dioxide, sodium oxide, aluminium oxide, lead oxide, zinc oxide, calcium oxide, potassium oxide, oxygen
Change the combination of one or more of lanthanum, boron oxide, especially its pre-sintered body, for acceleration of sintering process, be also added with a small amount of
Copper powder, aluminium powder, iron powder powder, both total contents are about the 30 ~ 80% of gross mass.
Described Metal Substrate is：Copper powder and its alloyed powder, iron powder and its alloyed powder, nikel powder and its one or more of alloyed powder
Combination, its content be about abrasive grain quality 25 ~ 80%.
The chemical active ingredient adding in grinding and polishing liquid can be acid-base modifier, including but not limited to acetic acid, Fructus Citri Limoniae
Acid, oxalic acid, benzoic acid, mountain plough acid, sodium hydroxide, potassium hydroxide, ammonia, ethylenediamine, dihydroxy ethyl ethylenediamine, triethanolamine,
The combination of one or more of ethylene glycol；Can also be some active ions, including but not limited to F-、Cl-、SO4 2-、NO3 -、
SO3 2-、NH4 +、Fe3+、Al3+One or more of combination；By active atomic, ion surface of the work diffusion with anti-
Should, change the surface physicochemical property of super hard and brittle materials, to improve material removal rate, improve surface roughness, and there is sub- table
The little feature of surface damage.
The auxiliary abrasive adding in described grinding and polishing liquid, can promote the uniform wear of grinding pad it is ensured that stable material
Material removal rate and surface precision；Auxiliary abrasive is carborundum, aluminium oxide, boron carbide little particle, and particle diameter distribution is in 0.5 μm of -10 μ
Between m, concentration is between 1 ~ 5%wt.
During grinding and polishing, on bulky diamond aggregation, the little particle diamond of blunt is in time from aggregation
Come off it is ensured that the stability of the self-sharpening of grinding and polishing pad and polishing efficiency, working (machining) efficiency is largely improved.
The invention has the beneficial effects as follows：
The present invention is applied to the grinding and polishing new method of the superhard crisp workpiece such as carborundum, sapphire, using diamond aggregation mill
Expect the grinding and polishing pad being prepared into, its abrasive concentration is high, the adhesion between the little abrasive particle of composition aggregation suitably, is thrown grinding
In photoreduction process, on aggregation, the little particle diamond of blunt comes off in time from aggregation, can effectively prevent grinding and polishing pad
Passivation it is ensured that the efficient stable of the self-sharpening of grinding and polishing pad and polishing efficiency, working (machining) efficiency obtains largely
Improve.By adding chemical active ingredient in lapping liquid, by active atomic (ion) in the diffusion of surface of the work, change super
The surface physicochemical property of hard brittle material, reduces the hardness of workpiece, improves the fragility of material surface, to improve material removal rate,
Improve surface roughness, and have the characteristics that sub-surface damage is little.Meanwhile, the auxiliary abrasive in grinding and polishing liquid is favorably improved
The even wear of grinding and polishing pad, is conducive to improving the surface precision of workpiece.The present invention is applied to carborundum, sapphire etc. and surpasses
The grinding and polishing of firmly crisp workpiece, it is simple to have a preparation, low cost, produces height, the features such as processing characteristics is stablized.
The grinding and polishing pad that the inventive method is prepared from contains aggregation bulky grain, and its abrasive concentration is high, throws grinding
In photoreduction process, aggregation bulky grain is not whole failure damage, but by forming between the inside raw material little particle of aggregation
Bonding agent fatigue rupture, inefficacy lead to crush then, cause little particle progressively to come off from aggregation, self-sharpening can be good, favorably
In the efficiency improving the grinding and polishing to superhard materials such as carborundum, sapphires and processing stability.The change added in lapping liquid
Learn the surface physicochemical property that active component can change super hard and brittle materials, reduce the hardness of workpiece, improve the fragility of material surface, with
Improve material removal rate, improve surface roughness, and have the characteristics that sub-surface damage is little.Meanwhile, in grinding and polishing liquid
Auxiliary abrasive is favorably improved the even wear of grinding and polishing pad, improves the surface precision of workpiece.The method that the present invention provides
Have the advantages that preparation is simple, process route is short, high yield rate, low cost, processing characteristics stable.
Specific embodiment
With reference to embodiment, the present invention is further illustrated.
Embodiment 1.
One kind is applied to carborundum, sapphire Ginding process.It prepares diamond abrasive aggregation first, using weight ratio
For 70:12:The diamond broken material of 8 10-15 μm of particle diameter, pre-sintered body vitrified bond and copper powder are prepared diamond and are assembled
Body, its preparation method is：By above-mentioned material through batch mixing, gluing, dry, granulation, removing glue, sinter molding, the again step such as screening
Suddenly, obtain the aggregation abrasive material that granularity is 2 ~ 20 μm.
The above-mentioned aggregation abrasive material preparing and resinoid bond are compared 35 according to weight:65 ratio（When being embodied as,
Aggregation abrasive material and resinoid bond part by weight also can 70：30,50：50 and 20：80 etc.）Mixed, be subsequently poured into system
In the mould got ready, using thermal initiation solidification, the demoulding obtains the grinding that shape for lugs is that quadrangular, projection are arranged as gerotor type and throws
Light pad, then carry out the solidify afterwards of 2 hours.
The above-mentioned grinding and polishing pad preparing is bonded on abrasive disk using double faced adhesive tape, in grinding of Nanopoli-100 type
On grinding and polishing ray machine with：Polishing pressure 0.03MPa, the rotating speed of polishing disk is 80rpm, and lapping liquid adds 2% 3 ethanol for deionized water
The W5 silicon-carbide particle of amine and 2% mass concentration, the parameter of polishing flow velocity 60 ml/min are to silicon carbide whisker slice lapping 40min
Afterwards, the material removing rate through checking carborundum is 100 ~ 130nm/min, and surface roughness Ra is 110 ~ 130nm, and not substantially
Thick cut.
Embodiment 2.
One kind is applied to carborundum, sapphire Ginding process.It prepares diamond abrasive aggregation first, using weight
Than for 65:35 diamond, pre-sintered body Low-temperature vitrified bond prepare diamond aggregation, and the original particle size of diamond is 8-
12 μm of particle diameters, its preparation method is：By above-mentioned material through batch mixing, gluing, dry, granulation, removing glue, sinter molding, sieve again
The steps such as choosing, obtain the diamond aggregation abrasive particle that granularity is 50 ~ 60 μm.
By the above-mentioned aggregation bulky grain preparing and copper powder by weight for 44:60 ratio（When being embodied as, assemble
The ratio of body bulky grain and copper powder can be also 75：25,50：50 or 20：80）Mixed, be then placed in pre- from ready
In graphite jig, after carrying out hot pressed sintering 15 minutes, the demoulding obtains the pellet that shape for lugs is pentagonal prism, and its bonding is become projection
The grinding pad arranged as radial type.
The above-mentioned grinding and polishing pad preparing is bonded on abrasive disk using double faced adhesive tape, in grinding of Nanopoli-100 type
On grinding and polishing ray machine with：Polishing pressure 0.025MPa, the rotating speed of polishing disk is 100rpm, and lapping liquid adds 1% second two for deionized water
Amine, the parameter of polishing flow velocity 40 ml/min are ground after 50min to sapphire wafer, through checking sapphire material removing rate
For 420 ~ 500nm/min, surface roughness Ra is 120 ~ 140nm, and does not have substantially thick cut.
Embodiment 3.
One kind is applied to carborundum, sapphire polishing process.It prepares diamond abrasive aggregation first, it initially with
Weight is than for 62:30:The diamond of 8 3-5 μm of particle diameter, low-temp ceramics pre-sintered body and copper powder prepare diamond aggregation mill
, its preparation method is：By above-mentioned material through batch mixing, gluing, dry, granulation, removing glue, sinter molding, the again step such as screening
Suddenly, obtain the diamond aggregation abrasive material that granularity is 40 ~ 50 μm.
By the above-mentioned aggregation bulky grain preparing and resin by 50:50 ratio（When being embodied as, aggregation abrasive material and
Resinoid bond part by weight also can 70：30,60：40 and 20：80 etc.）Mixed, be subsequently poured in the mould preparing,
Vulcanizer is carried out hot-forming, it is that six prisms, projection are arranged as square lattice that the demoulding obtains shape for lugs（Lattice distance is
2cm）Grinding and polishing pad.
The above-mentioned grinding and polishing pad preparing is bonded on abrasive disk using double faced adhesive tape, in grinding of Nanopoli-100 type
On grinding and polishing ray machine with：Polishing pressure 0.02MPa, the rotating speed of polishing disk is 70rpm, and lapping liquid adds 0.5% second two for deionized water
Alcohol, the parameter of polishing flow velocity 50 ml/min to dividing sapphire C into after wafer polishing 60min, through inspection sapphire wafer
Material removing rate is 100 ~ 120nm/min, and surface roughness Ra is 5 ~ 10nm, and does not have scratches visible.
Embodiment 4.
One kind is applied to carborundum, sapphire polishing process.It prepares diamond abrasive aggregation first, using weight ratio
For 60:32:The diamond of 8 0.1-2 μm of particle diameter, low-temp ceramics pre-sintered body and copper powder prepare diamond aggregation, its system
Preparation Method is：Above-mentioned material is passed through：Batch mixing, gluing, dry, granulation, removing glue, sinter molding, the again step such as screening, obtain
Granularity is 40 ~ 50 μm of diamond aggregation.
By the above-mentioned aggregation bulky grain preparing and resin by 55:45 ratio（When being embodied as, aggregation abrasive material and
Resinoid bond part by weight also can 70：30,50：50 and 20：80 etc.）Mixed, be subsequently poured in the mould preparing,
Vulcanizer is carried out hot-forming after, the demoulding obtains the grinding and polishing that shape for lugs is that triangular prism, projection are arranged as screw type
Pad.
The above-mentioned grinding and polishing pad preparing is bonded on abrasive disk using double faced adhesive tape, in grinding of Nanopoli-100 type
On grinding and polishing ray machine with：Polishing pressure 0.05MPa, the rotating speed of polishing disk is 100rpm, and lapping liquid adds 1.5% pair for deionized water
Oxygen water and 1%（Can select between 1-5% when being embodied as）The W1 silicon-carbide particle of mass concentration（Can be also aluminium oxide, carbonization
The little particles such as boron, particle diameter is between 0.5-10 micron）, the parameter of polishing flow velocity 70 ml/min is to silicon carbide wafer polishing
After 60min, through checking sapphire material removing rate to be 50 ~ 60nm/min, surface roughness Ra is 6 ~ 8nm, and not substantially
Cut.
In sum, the processing method of the present invention mainly includes（1）Prepared by diamond abrasive aggregation；（2）Compressing；
（3）Prepare grinding and polishing liquid workpiece to be ground polish；The chemical active ingredient adding in grinding and polishing liquid is acid-alkali accommodation
Agent or active ion；Add appropriate little particle auxiliary abrasive in lapping liquid, make grinding and polishing pad uniform wear it is ensured that stable
Material removal rate.
Indication when preparing diamond abrasive aggregation in embodiment 1 to 4：
Batch mixing refers to：By diamond abrasive grains and binding agent（Sinter adjuvant）Measure by mass percentage, mix homogeneously system
Resulting mixture；
Gluing refer to：Feed the mixture into adhesive moistening to stir evenly, the addition of adhesive is the 0.1-35% of mixture weight；
Adhesive is polyvinyl acetate, Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, polyacrylate, a- cyanoacrylate, gathers
One or more of vinyl acetal and epoxy resin mixture.
Drying refers to：Mixture added with adhesive is dried in the range of 80 DEG C ~ 150 DEG C；
Granulation refers to：Polycrystalline diamond after drying is pulverized and sieved the granule obtaining desired particle size；
Removing glue refers to：Except the adhesive in degranulation, removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2
Hour
Sinter molding refers to：Granule after removing glue is formed through high temperature sintering and can be solidified or compressing diamond gathering
Body, sintering temperature 600-900 DEG C, the time is 30 minutes to 2 hours.
Part that the present invention does not relate to is same as the prior art or can be realized using prior art.
Claims (9)
1. a kind of grinding and polishing new method of superhard crisp workpiece is it is characterised in that it includes step：
(1) the abrasive material of presintering and sintering adjuvant according to mass percent mix homogeneously；It is then passed through dry, gluing, system
Grain, removing glue, sinter molding, screen again, obtain the aggregation abrasive material of sintering between 2 μm ~ 60 μm for the size；Wherein presintering
Abrasive material raw material be diamond single crystal or its broken material, original Abrasive Particle Size be 0.1 μm ~ 15 μm between；
(2) aggregation preparing abrasive material and bonding agent are mixed in proportion to pour in mould and are solidified, or will prepare
Abrasive agglomerates be mixed in proportion with binding agent and pour mould into and carry out through forcing press or vulcanizer hot-forming, or will prepare
Good abrasive agglomerates are poured into after being mixed with metal dust or vitrified bonding in proportion and are sintered molding in mould, are ground
Mill polishing pad；Described is cured as light-initiated solidification, thermal initiation solidification；Sintering or the abrasive disk polishing pad that is prepared from of solidification or
Bossed shape is had on disk, be shaped as one or more of the cylinder, prism, the frustum of a cone of projection combine；Projection table
EDS maps hole or soluble additive chip space；The arrangement pattern of projection is annular, spiral type, cycloidal, ray shape
Or point formation；
(3) grinding and polishing pad preparing is pasted onto on polisher lapper, then the classification according to superhard crisp workpiece, preparation is ground
Mill polishing fluid is ground to workpiece polishing；The chemical active ingredient adding in grinding and polishing liquid be acid-base modifier or activity from
Son；Add appropriate little particle auxiliary abrasive in lapping liquid, make grinding and polishing pad uniform wear it is ensured that stable material removes speed
Rate；
（4）Abrasive polishing process contain one grinding step with together with polishing process.
2. method according to claim 1 it is characterised in that：Described super hard and brittle materials monocrystalline more than 9 for Mohs' hardness
Body, polycrystal, various ceramic material and composite, including but not limited to carborundum, sapphire.
3. method according to claim 1 it is characterised in that：Described grinding and polishing pad is by diamond aggregation abrasive material with solid
Change, sintering, welding fabrication mode are solidified on being prepared from matrix；Matrix is resin base, ceramic base or Metal Substrate；Using resin
During base, curing mode adopts thermal initiation solidification, photocuring mode；During using pottery or Metal Substrate, need first base, then be sintered
And bonding.
4. method according to claim 3 is it is characterised in that described resin is：Pioloform, polyvinyl acetal, poly- carbonic acid vinegar, poly-
One or more of acrylate, epoxy resin, Polyethylene Glycol combine, and its content is the 30 ~ 80% of gross mass.
5. method according to claim 3 is it is characterised in that described ceramic base is：Silicon dioxide, sodium oxide, oxidation
One or more of aluminum, lead oxide, zinc oxide, calcium oxide, potassium oxide, lanthana, boron oxide combine, especially its presintering
Body, for acceleration of sintering process, has been also added with a small amount of copper powder, aluminium powder, iron powder powder, and both total contents are about the 30 of gross mass
~80%.
6. method according to claim 3 is it is characterised in that described Metal Substrate is：Copper powder and its alloyed powder, iron powder and
The combination of its alloyed powder, nikel powder and its one or more of alloyed powder, its content is about the 25 ~ 80% of abrasive grain quality.
7. method according to claim 1 it is characterised in that：In grinding and polishing liquid, the chemical active ingredient of interpolation can be
Acid-base modifier, including but not limited to acetic acid, citric acid, oxalic acid, benzoic acid, mountain plough acid, sodium hydroxide, potassium hydroxide, ammonia,
Ethylenediamine, the combination of one or more of dihydroxy ethyl ethylenediamine, triethanolamine, ethylene glycol；Can also be some activity from
Son, including but not limited to F-、Cl-、SO4 2-、NO3 -、SO3 2-、NH4 +、Fe3+、Al3+One or more of combination；By activity
Atom, ion, in the diffusion of surface of the work and reaction, change the surface physicochemical property of super hard and brittle materials, remove speed to improve material
Rate, improves surface roughness, and has the characteristics that sub-surface damage is little.
8. the method according to claims 1 it is characterised in that：The auxiliary abrasive adding in described grinding and polishing liquid,
The uniform wear of grinding pad can be promoted it is ensured that stable material removal rate and surface precision；Auxiliary abrasive is carborundum, oxidation
Aluminum, boron carbide little particle, between 0.5 μm -10 μm, concentration is between 1 ~ 5%wt for particle diameter distribution.
9. method according to claim 1, is characterized in that during grinding and polishing, and bulky diamond aggregation grinds
Blunt little particle diamond comes off from aggregation in time it is ensured that the stablizing of the self-sharpening of grinding and polishing pad and polishing efficiency
Property, working (machining) efficiency is largely improved.
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