CN110509114A - A kind of abrasive polishing method of tungsten alloy - Google Patents
A kind of abrasive polishing method of tungsten alloy Download PDFInfo
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- CN110509114A CN110509114A CN201910748593.2A CN201910748593A CN110509114A CN 110509114 A CN110509114 A CN 110509114A CN 201910748593 A CN201910748593 A CN 201910748593A CN 110509114 A CN110509114 A CN 110509114A
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- polishing
- abrasive
- grinding
- tungsten alloy
- partial size
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Abstract
A kind of abrasive polishing method of tungsten alloy belongs to the Ultraprecision Machining field of metal alloy.Specific steps are as follows: (1) slightly grind: selection deionized water is lapping liquid, and polishing fluid flow set is 6~12ml/min, selects 20~50 μm of partial size of diamond fixed grain grinding pad grinding, and the attrition process time is set as 20~40min.(2) lappingout: diamond abrasive partial size be 5~20 μm, process time is set as 40~60min, remaining machined parameters with slightly grind it is identical.(3) polish: polishing fluid contains silica solution, PH regulator, deionized water, and the volume fraction of silica solution abrasive material is 10~25%, and pH value is 2~5；Polishing fluid flow set is 4~6ml/min, and grinding pressure is set as 20-40kpa, and the attrition process time is set as 1.5~2.5h.Entire abrasive polishing process process time is lower than 5h, and the roughness Ra on the tungsten alloy surface after polishing is less than 10nm, can meet the required precision in actual processing field, realize the Ultra-precision Turning of tungsten alloy.
Description
Technical field
The invention belongs to the Ultraprecision Machining fields of metal alloy, are related to the ultraprecise of metal alloy grinding and polishing
Processing method, in particular to a kind of tungsten alloy grinding and Ultraprecise polished method.
Background technique
It is leading phase that tungsten alloy, which is with hard tungsten, using softer metals such as nickel, iron, copper, cobalts as the alloy of matrix phase.Tungsten alloy
Due to its special material structure, not only there is high density, high intensity, excellent hot property, excellent corrosion-resistant and radiation hardness
Performance, and there is better ductility and machinability than pure tungsten.Due to its good comprehensive performance, tungsten alloy is in ultraprecise
Manufacture field application gradually attracts attention.In aerospace field, tungsten alloy mainly for the manufacture of gyro wheel,
Damper, counterpoised balance etc., high-precision processing quality advantageously ensure that components stability in use.In military industry field, as
A kind of ray materials of outstanding shielding γ-ray and other radiation, tungsten alloy be widely used to production radioactive source container,
Collimator, the medical precise parts such as shield and nuclear shield.At the same time, tungsten alloy is as spallation source, nuclear energy, impact detonation physics
Target or critical component in the experiment of the Precise physicals such as experiment, are conducive to improve the standard of experimental result with good surface quality
True property.Therefore, tungsten alloy surface grinding polishing technology is most important.
However the patent of invention about tungsten alloy abrasive polishing process is less, not yet forms the work of a set of mature specification at present
Skill standard.It is directed to the manufacturing process of tungsten alloy at present, still based on traditional turnery processing.But due to tungsten alloy hardness
Height, brittleness is big, flexible deformation is big, generates biggish cutting force and higher cutting temperature in process, cutter is caused to grind
Damage is serious, processing difficulties.For the problem present on, some researchers are studied on cutter and skilled worker's technique,
Turning tungsten alloy technique is improved by introducing secondary process technology and replacement wear resistant cutters, as ultrasonic wave added dry turning is cut
Method, elliptical vibration cutting method, ultrasonic vibration cutting method based on gas-liquid atomization cooling etc..Although above-mentioned improved method achieves one
Fixed effect, but machined surface quality and precision are still difficult to meet the requirement of Ultra-precision Turning.In view of grinding and polishing work
Skill is currently that precision size, the super main means accurate, surface roughness is extremely low of shape are realized in various solid material processing, is needed
It is proposed a set of abrasive polishing process for tungsten alloy.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, and for the Precision Machining of tungsten alloy from now on reference is provided, the present invention
The abrasive polishing method for being designed to provide a kind of tungsten alloy, can fast and effeciently make surface of the tungsten alloy on microcosmic
It is horizontal that roughness reaches 10nm mirror surface below, and surface is without the measurable scratch of obvious naked eyes.
To achieve the goals above, the technical solution adopted by the present invention is that:
A kind of abrasive polishing method of tungsten alloy, the grinding and polishing device based on tungsten alloy is realized, first by tungsten alloy sample
Part 3 is bonded on disk clamp 4 with paraffin, and grinding/polishing pad 2 is bonded on stainless steel workbench 1, stainless steel workbench 1 by
Stepper motor driving.Stainless steel workbench 1 and exemplar 3 are respectively pivoted in process.Polishing liquid device be mounted on grinding/
Above polishing pad 2, during grinding and polishing, polishing fluid 6 is dropped on grinding/polishing pad 2, and realization adds the auxiliary of grinding and polishing
Work.The abrasive polishing method includes the configuration of lapping liquid, the selection of grinding and polishing parameter and selection of grinding and polishing pad etc., tool
Body step are as follows:
1) (neutral polishing fluid) is slightly ground
Lapping liquid is deionized water, and polishing fluid flow set is 6~12ml/min.Solidified abrasive grinding, abrasive material select gold
Hard rock abrasive grain, the partial size of abrasive material are 20~50 μm, and grinding pad is selected through diamond fixed grain grinding pad.Process disk rotating speed setting
For 60~120rmp, workpiece rotational frequency is set as 50~110rmp, and grinding pressure is arranged by way of increasing balancing disk or counterweight
For 40~80kpa.Process time is set as 20~40min.Workpiece surface is washed with water after the completion of slightly grinding, and is dried up with air gun.
2) lappingout (neutral polishing fluid)
The diamond abrasive partial size of lappingout is 5~20 μm, and process time is set as 40~60min, and other parameter settings are (such as
Flow quantity is polished, disk and workpiece rotational frequency etc. are processed) it is identical as process is slightly ground.Workpiece surface is washed with water after the completion of lappingout, and
It is dried up with air gun.
3) mixed polishing solution is configured
Mixed polishing solution includes PH regulator, silicon sol solution and deionized water, and mixed solution guarantees pH value 2~5,
The concentration of silica solution is arranged in 10~25vol.%.The PH regulator is Citric acid crystal, in apple acid crystal, phosphoric acid solution
One or more kinds of mixing；The silica abrasive grain for being 65~80nm containing Abrasive Particle Size in the silicon sol solution.
4) (acid polishing slurry) is polished
The polishing fluid that step 3) configures is dropped on polishing pad, polishing fluid flow set is 4~6ml/min.Free mill
Material polishing, it is the silica abrasive grain of 65~80nm that abrasive material, which selects partial size, and polishing pad selects IC 1000/Suba IV.Disk is processed to turn
Speed is set as 50~80rmp, and workpiece rotational frequency is set as 40~70rmp, and grinding is arranged by way of increasing balancing disk or counterweight
Pressure is 20~40kpa.Process time is set as 1.5-2.5h.Workpiece surface is washed with water after the completion of polishing, and is blown with air gun
Dry, the roughness Ra on the tungsten alloy surface after polishing is less than 10nm.
The beneficial effects of the present invention are: tungsten alloy automatic grinding and polishing method are realized by applying simple device,
The roughness Ra on the tungsten alloy surface after polishing is less than 10nm.Entire abrasive polishing process process time is lower than 5h, can meet reality
The required precision of border manufacture field realizes the Ultra-precision Turning of tungsten alloy.
Detailed description of the invention
Fig. 1 is the process principle figure of abrasive polishing process；
Fig. 2 is the flow chart of abrasive polishing process.
In figure: 1 stainless steel workbench；2 grindings/polishing pad；3 tungsten alloy exemplars；4 disk clamps；5 balancing disks；6 polishings
Liquid.
Specific embodiment
A specific embodiment of the invention is described in detail below in conjunction with technical solution.
Tungsten alloy exemplar 3 selects 95W-3.5Ni-1.5Fe alloy, it be respectively 2.5 μm, 2.5 μm by average diameter,
Made of 3.5 μm of reduction tungsten, carbonyl nickel and carbonyl iron powder is sintered, processing dimension is 15 × 7mm of Φ3.With paraffin by 3 blocks of tungsten
4 circumference of fixture that uniformly bonding diameter is Φ 100mm of alloy exemplar 3, carries out 3 pressure-loaded of exemplar with discharge plate 5.It will grinding
Pad 2 is bonded on the stainless steel workbench 1 of polisher lapper.Polishing liquid device is mounted on 2 top of polishing pad, and polishing fluid 6 drips
On grinding pad 2, the secondary process to grinding and polishing is realized.
1) polishing fluid is deionized water, and polishing fluid flow set is 8.5ml/min.Solidified abrasive grinding, abrasive material select gold
Hard rock abrasive grain, the partial size of abrasive material are 15~25 μm, and grinding pad 2 selects diamond fixed grain grinding pad.Process disk rotating speed setting
For 70rmp, workpiece rotational frequency is set as 60rmp, and setting grinding on-load pressure is 59kpa.Process time is set as 30min.Slightly grind
Workpiece surface is washed with water after the completion, and is dried up with air gun.
2) grinding pad to be replaced, guarantees that the diamond abrasive partial size of lappingout is 5~10 μm, process time is set as 40min,
, as polished flow quantity, the processing parameter settings such as disk and workpiece rotational frequency are identical as process is slightly ground for he.It is washed with water after the completion of lappingout
Workpiece surface, and dried up with air gun.
3) configure mixed polishing solution: mixed polishing solution includes acid solution, silicon sol solution and deionized water, wherein acid
Solution is Citric acid crystal adjusting, and mixed solution pH value is set as 4.Contain silica abrasive grain in silicon sol solution, grinds
Grain partial size is 72nm, and the concentration of silica solution is arranged in 15vol.%.
4) polishing pad is replaced, above-mentioned polishing fluid is dropped on polishing pad, polishing fluid flow set is 5.5ml/min.Trip
From abrasive polishing, abrasive material selects silica abrasive grain, and polishing pad selects IC 1000/Suba IV.Processing disk rotating speed is set as
60rmp, workpiece rotational frequency are set as 50rmp, and setting polishing on-load pressure is 29kpa.Process time is set as 1.5h.Polishing is completed
After wash with water workpiece surface, and dried up with air gun, the roughness on the tungsten alloy surface after polishing reaches Ra 7nm.
Content described in this specification embodiment is only enumerating to the way of realization of inventive concept, protection of the invention
Range should not be construed as being limited to the specific forms stated in the embodiments, and protection scope of the present invention also includes art technology
Personnel conceive according to the present invention it is conceivable that equivalent technologies mean.
Claims (6)
1. a kind of abrasive polishing method of tungsten alloy, which is realized based on the grinding and polishing device of tungsten alloy, throw
Light liquid device is mounted on above grinding/polishing pad, and tungsten alloy exemplar is bonded on disk clamp, and grinding/polishing pad is bonded in not
It becomes rusty on steel workbench, stainless steel workbench is driven by stepper motor；Stainless steel workbench and exemplar are respectively around axis in process
Rotation, polishing fluid are dropped on grinding/polishing pad, which is characterized in that the abrasive polishing method following steps:
1) it slightly grinds
Lapping liquid is deionized water, and polishing fluid flow set is 6~12ml/min；Consolidating material and diamond abrasive grinding, grinding pad choosing
With through diamond fixed grain grinding pad；Processing disk rotating speed is set as 60~120rmp, and workpiece rotational frequency is set as 50~110rmp,
Grinding pressure is 40~80kpa；Process time is set as 20~40min；Workpiece surface is washed with water after the completion of slightly grinding, uses air gun
Drying；
2) lappingout
The diamond abrasive partial size of lappingout is less than diamond abrasive partial size in step 1), and process time is set as 40~60min,
His parameter setting is identical as process is slightly ground；Workpiece surface is washed with water after the completion of lappingout, is dried up with air gun；
3) mixed polishing solution is configured
Mixed polishing solution includes PH regulator, silicon sol solution and deionized water, and mixed solution guarantees pH value 2~5, and silicon is molten
The concentration of glue is arranged in 10~25vol.%；Contain silica abrasive grain in the silicon sol solution；
4) it polishes
The polishing fluid that step 3) configures is dropped on polishing pad, polishing fluid flow set is 4~6ml/min；Free abrasive is thrown
Light, it is the silica abrasive grain of 65~80nm that abrasive material, which selects partial size, and polishing pad selects IC 1000/Suba IV；Processing disk rotating speed is set
It is set to 50~80rmp, workpiece rotational frequency is set as 40~70rmp, and grinding pressure is 20~40kpa；Process time is set as 1.5-
2.5h；Workpiece surface is washed with water after the completion of polishing, is dried up with air gun, the roughness Ra on the tungsten alloy surface after polishing is less than
10nm。
2. a kind of abrasive polishing method of tungsten alloy according to claim 1, which is characterized in that by increase balancing disk or
Grinding pressure is arranged in the mode of counterweight.
3. a kind of abrasive polishing method of tungsten alloy according to claim 1, which is characterized in that golden in the step 1)
The partial size of hard rock abrasive material is 20~50 μm.
4. a kind of abrasive polishing method of tungsten alloy according to claim 1, which is characterized in that golden in the step 2)
The partial size of hard rock abrasive material is 5~20 μm.
5. a kind of abrasive polishing method of tungsten alloy according to claim 1, which is characterized in that PH in the step 3)
Regulator is the mixing of one or more of Citric acid crystal, apple acid crystal, phosphoric acid solution.
6. a kind of abrasive polishing method of tungsten alloy according to claim 1, which is characterized in that silicon in the step 3)
Silica abrasive grain partial size in sol solution is 65~80nm.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111681782A (en) * | 2020-06-18 | 2020-09-18 | 中国工程物理研究院激光聚变研究中心 | Method for manufacturing impedance matching target |
| CN112658977A (en) * | 2020-12-17 | 2021-04-16 | 江苏集萃精凯高端装备技术有限公司 | Chemical mechanical polishing method for flaky lutetium oxide laser crystal |
| CN113547389A (en) * | 2021-07-28 | 2021-10-26 | 大连理工大学 | Ultra-precise grinding process for tungsten alloy part with complex curved surface |
| CN113787450A (en) * | 2021-09-07 | 2021-12-14 | 大连理工大学 | Preparation method of super-smooth surface of FeCrAl material |
| CN114589616A (en) * | 2022-04-21 | 2022-06-07 | 哈尔滨工业大学 | Heating and vibration synergistic chemical mechanical polishing CaF2Wafer apparatus and method |
| CN114670111A (en) * | 2022-04-21 | 2022-06-28 | 哈尔滨工业大学 | Fixed abrasive combined ultrasonic atomization polishing CaF2Apparatus and method for crystals |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111681782A (en) * | 2020-06-18 | 2020-09-18 | 中国工程物理研究院激光聚变研究中心 | Method for manufacturing impedance matching target |
| CN111681782B (en) * | 2020-06-18 | 2022-06-07 | 中国工程物理研究院激光聚变研究中心 | Method for manufacturing impedance matching target |
| CN112658977A (en) * | 2020-12-17 | 2021-04-16 | 江苏集萃精凯高端装备技术有限公司 | Chemical mechanical polishing method for flaky lutetium oxide laser crystal |
| CN113547389A (en) * | 2021-07-28 | 2021-10-26 | 大连理工大学 | Ultra-precise grinding process for tungsten alloy part with complex curved surface |
| CN113787450A (en) * | 2021-09-07 | 2021-12-14 | 大连理工大学 | Preparation method of super-smooth surface of FeCrAl material |
| CN113787450B (en) * | 2021-09-07 | 2022-11-15 | 大连理工大学 | Preparation method of super-smooth surface of FeCrAl material |
| CN114589616A (en) * | 2022-04-21 | 2022-06-07 | 哈尔滨工业大学 | Heating and vibration synergistic chemical mechanical polishing CaF2Wafer apparatus and method |
| CN114670111A (en) * | 2022-04-21 | 2022-06-28 | 哈尔滨工业大学 | Fixed abrasive combined ultrasonic atomization polishing CaF2Apparatus and method for crystals |
| CN114589616B (en) * | 2022-04-21 | 2022-10-04 | 哈尔滨工业大学 | Heating and vibration synergistic chemical mechanical polishing (CaF) 2 Wafer device and method |
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