CN106409772A - Highly reliable surface-mount diode and preparation method thereof - Google Patents
Highly reliable surface-mount diode and preparation method thereof Download PDFInfo
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- CN106409772A CN106409772A CN201611083008.4A CN201611083008A CN106409772A CN 106409772 A CN106409772 A CN 106409772A CN 201611083008 A CN201611083008 A CN 201611083008A CN 106409772 A CN106409772 A CN 106409772A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 32
- 238000005476 soldering Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000005245 sintering Methods 0.000 claims description 41
- 229910000679 solder Inorganic materials 0.000 claims description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 239000000919 ceramic Substances 0.000 claims description 32
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- 238000012216 screening Methods 0.000 claims description 8
- 241000500881 Lepisma Species 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000006641 stabilisation Effects 0.000 claims description 4
- 238000011105 stabilization Methods 0.000 claims description 4
- QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical compound [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008901 benefit Effects 0.000 abstract description 2
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 239000011195 cermet Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention provides a highly reliable surface-mount diode and a preparation method thereof. According to the diode device, a cermet casing and a chip are sintered and fixed in the sintered area of the casing through soldering; and an ultrasonic bonding method is used to connect the bonding area and the chip and the bonding area of the casing through a bonding wire and seam parallel welding seals. The problem that an original plastic package device cannot be used in the field of highly reliable devices due to limited working environment is solved. Through the surface-mount diode, an original circuit realizes in situ replacement without changing the size of a pad, namely a circuit board is not changed; and the diode has the advantages of improved reliability, simple production process and easy mass production.
Description
Technical field
The present invention relates to technical field of semiconductor encapsulation, especially relate to a kind of highly reliable surface-pasted diode and its
Preparation method.
Background technology
At present, the field such as space flight, aviation, ship, weapons uses the surface mount diode of certain electric current or power in a large number
Device, it is desirable to the features such as thermal resistance is little, impact resistance is good, reliability is high, provides premise for improving whole aircraft reliability.
At present, the surface-pasted diode component great majority with certain electric current or power are Plastic Package.
The semiconductor device of Plastic Package, is shown in Fig. 1, by plastic packaging material and production technology limited its operating temperature range and
Reliability all can not meet the use requirement of adverse circumstances, is particularly unable to long-term work in the case that moist and salt gas are heavy,
The feature of its encapsulation determines it and cannot be used for highly reliable field.
Therefore, how a kind of reliability height is provided and production and processing technology is simpler, be easy to the diode produced in enormous quantities
Device is the problem of those skilled in the art's urgent need to resolve.
Content of the invention
It is an object of the invention to provide a kind of highly reliable surface-pasted diode, the reliability height of this diode and life
Produce processing technique simpler, be easy to produce in enormous quantities.Another object of the present invention is to provide a kind of above-mentioned highly reliable surface
The preparation method of the diode of attachment.
For solving above-mentioned technical problem, the technical scheme that the present invention provides is：
A kind of highly reliable surface-pasted diode, including the shell for encapsulating, chip, is used for fixing described chip
Solder on described shell and the bonding wire for being connected the electrode of described chip with the electrode of shell；
Described shell includes two pieces of conducting strips, metal connecting post, base of ceramic, molybdenum sheet, routing piece, becket frame and gold
Belong to cover plate；
Pit for placing described chip, the inner bottom of described pit are offered on the portion of upper surface of described base of ceramic
First connecting hole is offered on face, the remaining upper surface of described base of ceramic offers the second connecting hole, described base of ceramic
Surrounding side on be provided with side metal layer；
Described molybdenum sheet is fixed in the pit on described base of ceramic by soldering and covers the first company in described pit
Connect hole；
Described routing piece is fixed on the remaining upper surface of described base of ceramic by soldering and covers described second connection
Hole；
Described conducting strip is fixed on the bottom surface of described base of ceramic by soldering；
It is provided with the upper end of the metal connecting post in metal connecting post, and described first connecting hole in described first connecting hole
With the lower surface soldering connection of described molybdenum sheet, the lower end of metal connecting post in described first connecting hole and one piece of described conducting strip
Upper surface soldering connection；
It is provided with the upper end of the metal connecting post in metal connecting post, and described second connecting hole in described second connecting hole
With the lower surface soldering connection of described routing piece, the lower end of metal connecting post in described second connecting hole is led with described in another piece
The upper surface soldering connection of electric piece；
Described becket frame is fixed at the surrounding edge on the upper surface of described base of ceramic by soldering；
Described metal cover board is fixed at opening above described becket frame by parallel seam welding sealing；
Described chip is sintered to fix on described molybdenum sheet by solder；
One end of described bonding wire is connected with the bonding region of described chip, and the other end of described bonding wire and described shell
In routing piece connect.
Preferably, the back side of described chip is provided with three layers composite metal layer, from inside to outside titanium-nickel-silver successively, described
The front of chip is aluminium lamination, and the thickness of described aluminium lamination is more than 2 microns.
Preferably, described solder is slicker solder silver solder.
Preferably, described bonding wire is aluminium wire, a diameter of 250 μm.
Present invention also provides a kind of preparation method of above-mentioned highly reliable surface-pasted diode, walk including following
Suddenly：
1) chip sintering：
After die Bonder temperature stabilization, fully connect with sintering zone with the preheating zone of sintering furnace respectively with the temperature measuring head of point thermometer
Touch, control preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then take out shell from nitrogen cabinet, then start supply hydrogen and nitrogen into sintering furnace, control hydrogen flowing quantity
For 600mL/min ± 100mL/min, nitrogen flow is 5L/min ± 1L/min；
Take a shell to put and carry out the pre-heat treatment to preheating zone, control preheating zone surface temperature to be 200 DEG C ± 5 DEG C, preheating
Time is 4min～6min；
Then shell is put and be sintered to sintering zone, control sintering zone surface temperature to be 400 DEG C ± 10 DEG C, sintering
Time is not more than 2min；
Then pick up welding wire, make wire tip contact the molybdenum sheet of shell, wire tip melted by heat becomes solder droplets in shell
Molybdenum sheet on, then chip is lain on solder, moving chip is until the outside of the surrounding edge of chip is it can be seen that solder；
Then bluff piece of going bail for lies on chip, then by the shell with chip be placed on nitrogen nozzle carry out cold
But, then push screening glass 2s～3s, after cooling 10min, take off screening glass；
2) ultrasonic bond
First pass through ultrasonic bond and process and one end of described bonding wire is connected with the routing piece in described shell, then by super
Sound bonding is processed and is connected the other end of described bonding wire with the bonding region of described chip, relative in controlling ultrasonic bond to process
Ultrasonic power is 100～150W, and ultrasonic time is 150～300ms relatively, and ultrasonic pressure is 20～26gf relatively；
3) parallel seam welding
By parallel seam welding, the sealing of described metal cover board is fixed at opening above described becket frame, controls spot welding
Power is 1400W～1600W, and seam welding power is 1600W～1800W, and seam welding pressure is 0.98N～1.176N, and the pulse period is
90ms～110ms, pulse width is 6ms～10ms, and speed is 2.0mm/s～3.0mm/s；So far diode preparation completes.
Preferably, described welding wire is slicker solder silver wire, and composition is Pb92.5% Sn5% Ag2.5%.
Preferably, described bonding wire is aluminium wire, a diameter of 250 μm, and purity is more than or equal to 99.99%.
Compared with prior art, the invention provides a kind of highly reliable surface-pasted diode and preparation method thereof, this
Application meets the reliability requirement to shell for the semiconductor device using ceramic and metal package, meets the electricity in semiconductor device
The requirement to sealing and high dielectric withstanding voltage for the road, and structure is simple, and described shell adapts to the envelope of polytype chip
Dress, particularly having big surge current needs to be bonded the encapsulation of the chip of many bonding wires or line row or sintering conduction band, and metal is made pottery
Ceramic shell belongs to sealing shell, can solve plastic packaged device moisture in wet condition and suck problem, ceramic metal
Envelope operating temperature scope is wider than plastic packaging, has the operating temperature of the plastic packaged device of certain electric current or power requirement general
Below 85 DEG C, and ceramic and metal package can realize the limit of working temperature scope of chip；
Chip is sintered to fix on the sintering zone of shell by the application by solder, is carried out quickly using low-temperature alloy solder
Alloy sintering, solves the problems, such as the matched coefficients of thermal expansion between housing base material and chip, nitrogen in cooperation sintering process
The control of hydrogen protective atmosphere prevents the appearance of oxide layer, reduces the sintering temperature and sintering time shadow to product high-temperature behavior
Ring；
One of reason limited by plastic packaged device operating temperature is to be coupled together by way of sintering between exit,
When temperature change is larger, the different internal stress that produces of the thermal coefficient of expansion of different materials cannot discharge it is easy to cause chip to damage
Wound and lead to component failure, for this application using ultrasonic bond by the way of the key with the bonding region chip for the bonding wire and shell
Close area to be connected, adopt high-purity aluminium wire ultrasonic bond, bonding wire has certain radian, material thermal expansion coefficient is different in temperature change
The internal stress producing can discharge it is ensured that the reliability of semiconductor device work, before being bonded, device is carried out simultaneously
Plasma cleaning, the oxide layer on removal chip surface, wire bonding area and impurity contact reliability it is ensured that sintering between solder joint,
Thus ensureing product long-term reliability；
Cover plate in shell is sealed connected together by the mode finally taking parallel seam welding with the becket frame in shell,
Form the entirety of a sealing so that product of the present invention is cavities seals device, for the semitight of plastic device, its
Quality and reliability are increased dramatically.
To sum up, this application provides a kind of highly reliable surface-pasted diode and preparation method thereof, this diode component
Use bonding using ceramic and metal package, chip by way of solder is sintered to fix in the sintering zone of shell, using ultrasonic bond
Silk is connected the bonding region of chip and parallel seam welding sealing with the bonding region of shell, overcomes original plastic packaged device because of work
Make limited by environment, to cannot be used for the problem of highly reliable devices field, this surface mount diode makes original circuit not change weldering
Disk size be circuit board without modification in the case of realize substituting in situ, and reliability is improved, and production and processing technology is relatively
Simply, it is easy to produce in enormous quantities.
Brief description
Fig. 1 is the structural representation of surface pasted plastic packaged device in prior art；
Fig. 2 is that a kind of decomposition texture of the shell of highly reliable surface-pasted diode provided in an embodiment of the present invention is illustrated
Figure；
Fig. 3 is the structural representation of base of ceramic and the becket frame after shell in Fig. 2 removes cover plate；
Fig. 4 is a kind of cross section structure diagram of highly reliable surface-pasted diode provided in an embodiment of the present invention；
Fig. 5 is the front view of the diode in Fig. 4；
Fig. 6 is the upward view of the diode in Fig. 4.
In figure：1 conducting strip, 2 metal connecting posts, 3 base of ceramic, 4 molybdenum sheets, 5 routing pieces, 6 becket frames, 7 metal cover boards,
8 second connecting holes, 9 side metal layers, 10 pits, 11 chips, 12 solders, 13 bonding wires.
Specific embodiment
Purpose, technical scheme and advantage for making the embodiment of the present invention are clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described it is clear that described embodiment is
A part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained on the premise of not making creative work, broadly falls into the scope of protection of the invention.
In describing the invention it is to be understood that term " " center ", " axial ", " radially ", " longitudinal ", " horizontal ",
" length ", " width ", " on ", D score, "front", "rear", "left", "right", " top ", " bottom ", " interior ", " outward ", " clockwise ", " inverse
The orientation of instruction such as hour hands ", " vertical ", " level " or position relationship are based on orientation shown in the drawings or position relationship, are only
For the ease of the description present invention and simplification description, rather than the device of instruction or hint indication or element must have specific side
Position, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or D score,
The first and second feature directly contacts can be included not to be directly contact but passes through it is also possible to include the first and second features
Between other characterisation contact.And, fisrt feature second feature " on ", that " top " and " above " include first is special
Levy second feature surface and oblique upper, or be merely representative of fisrt feature level height be higher than second feature.First is special
Levy second feature " under ", " lower section " and " below " include fisrt feature in the underface of second feature and obliquely downward, or only
Only represent that fisrt feature level height is less than second feature.
With reference to Fig. 1～Fig. 6, Fig. 1 is the structural representation of surface pasted plastic packaged device in prior art；Fig. 2 is the present invention
The decomposition texture schematic diagram of the shell of a kind of highly reliable surface-pasted diode that embodiment provides；Fig. 3 is the shell in Fig. 2
Remove the structural representation of the base of ceramic after cover plate and becket frame；Fig. 4 is that one kind provided in an embodiment of the present invention is highly reliable
The cross section structure diagram of surface-pasted diode；Fig. 5 is the front view of the diode in Fig. 4；Fig. 6 is two poles in Fig. 4
The upward view of pipe.
This application provides a kind of highly reliable surface-pasted diode, including the shell for encapsulating, chip 11, it is used for
The solder 12 that is fixed on described chip 11 on described shell and being used for by the electrode of the electrode of described chip 11 and shell even
The bonding wire 13 connecing；
Described shell includes two pieces of conducting strips 1, metal connecting post 2, base of ceramic 3, molybdenum sheet 4, routing piece 5, becket frame 6
And metal cover board 7；
Pit 10 for placing described chip 11, described pit are offered on the portion of upper surface of described base of ceramic 3
First connecting hole is offered on 10 inner bottom surface, the remaining upper surface of described base of ceramic 3 offers the second connecting hole 8, institute
State and side metal layer 9 is provided with the surrounding side of base of ceramic 3；
Described molybdenum sheet 4 is fixed in the pit 10 on described base of ceramic 3 by soldering and covers in described pit 10
First connecting hole；
Described routing piece 5 is fixed on the remaining upper surface of described base of ceramic 3 by soldering and covers described second even
Connect hole 8；
Described conducting strip 1 is fixed on the bottom surface of described base of ceramic 3 by soldering；
It is provided with the upper of metal connecting post 2 in metal connecting post 2, and described first connecting hole in described first connecting hole
End and the lower surface soldering connection of described molybdenum sheet 4, the lower end of metal connecting post 2 in described first connecting hole is led with described in one piece
The upper surface soldering connection of electric piece 1；
It is provided with metal connecting post 2 in metal connecting post 2, and described second connecting hole 8 in described second connecting hole 8
The lower surface soldering connection of upper end and described routing piece 5, the lower end of metal connecting post 2 in described second connecting hole 8 with another
The upper surface soldering connection of conducting strip 1 described in block；
Described becket frame 6 is fixed at the surrounding edge on the upper surface of described base of ceramic 3 by soldering；
Described metal cover board 7 is fixed at opening above described becket frame 6 by parallel seam welding sealing；
Described chip 11 is sintered to fix on described molybdenum sheet 4 by solder 12；
One end of described bonding wire 13 is connected with the bonding region of described chip 11, and the other end of described bonding wire 13 and institute
The routing piece 5 stated in shell connects.
In one embodiment of the invention, the back side of described chip 11 is provided with three layers composite metal layer, from interior to
Outer titanium-nickel-silver successively, the front of described chip 11 is aluminium lamination, and the thickness of described aluminium lamination is more than 2 microns.
In one embodiment of the invention, described solder 12 is slicker solder silver solder.
In one embodiment of the invention, described bonding wire 13 is aluminium wire, a diameter of 250 μm.
Present invention also provides a kind of preparation method of above-mentioned highly reliable surface-pasted diode, walk including following
Suddenly：
1) chip sintering：
After die Bonder temperature stabilization, fully connect with sintering zone with the preheating zone of sintering furnace respectively with the temperature measuring head of point thermometer
Touch, control preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then take out shell from nitrogen cabinet, then start supply hydrogen and nitrogen into sintering furnace, control hydrogen flowing quantity
For 600mL/min ± 100mL/min, nitrogen flow is 5L/min ± 1L/min；
Take a shell to put and carry out the pre-heat treatment to preheating zone, control preheating zone surface temperature to be 200 DEG C ± 5 DEG C, preheating
Time is 4min～6min；
Then shell is put and be sintered to sintering zone, control sintering zone surface temperature to be 400 DEG C ± 10 DEG C, sintering
Time is not more than 2min；
Then pick up welding wire, make wire tip contact the molybdenum sheet 4 of shell, wire tip melted by heat becomes solder droplets in shell
Molybdenum sheet 4 on, then chip 11 is lain on solder 12, moving chip 11 is until the outside of the surrounding edge of chip 11 can
See solder 12；
Then bluff piece of going bail for lies on chip 11, then the shell with chip 11 is placed on nitrogen nozzle and carries out
Cooling, then pushes screening glass 2s～3s, takes off screening glass after cooling 10min；
2) ultrasonic bond
First pass through ultrasonic bond and process and one end of described bonding wire 13 is connected with the routing piece 5 in described shell, then lead to
Cross ultrasonic bond and process and the other end of described bonding wire 13 is connected with the bonding region of described chip 11, control ultrasonic bond to process
In relative ultrasonic power be 100～150W, relatively ultrasonic time is 150～300ms, and ultrasonic pressure is 20～26gf relatively；
3) parallel seam welding
By parallel seam welding, the sealing of described metal cover board 7 is fixed at opening above described becket frame 6, control point
Weldering power is 1400W～1600W, and seam welding power is 1600W～1800W, and seam welding pressure is 0.98N～1.176N, the pulse period
For 90ms～110ms, pulse width is 6ms～10ms, and speed is 2.0mm/s～3.0mm/s；So far diode preparation completes.
In one embodiment of the invention, described welding wire is slicker solder silver wire, and composition is Pb92.5% Sn5%
Ag2.5%.
In one embodiment of the invention, described bonding wire 13 is aluminium wire, and a diameter of 250 μm, purity is more than or equal to
99.99%.
For a further understanding of the present invention, the one kind present invention being provided with reference to embodiment is highly reliable surface-pasted
The preparation method of diode is described in detail, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
A kind of preparation method of highly reliable surface-pasted diode, comprises the following steps：
1) chip sintering：
After die Bonder temperature stabilization, fully connect with sintering zone with the preheating zone of sintering furnace respectively with the temperature measuring head of point thermometer
Touch, control preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then take out shell from nitrogen cabinet, then start supply hydrogen and nitrogen into sintering furnace, control hydrogen flowing quantity
For 600mL/min, nitrogen flow is 6L/min；
Take a shell to put and carry out the pre-heat treatment to preheating zone, control preheating zone surface temperature to be 200 DEG C, preheating time is
5min；
Then shell is put and be sintered to sintering zone, control sintering zone surface temperature to be 410 DEG C, sintering time is
1.5min；
Then pick up welding wire, make wire tip contact the molybdenum sheet 4 of shell, wire tip melted by heat becomes solder droplets in shell
Molybdenum sheet 4 on, then chip 11 is lain on solder 12, moving chip 11 is until the outside of the surrounding edge of chip 11 can
See solder 12；
Described welding wire is slicker solder silver wire, and composition is Pb92.5% Sn5% Ag2.5%.
Then bluff piece of going bail for lies on chip 11, then the shell with chip 11 is placed on nitrogen nozzle and carries out
Cooling, then pushes screening glass 3s, takes off screening glass after cooling 10min；
2) ultrasonic bond
First pass through ultrasonic bond and process and one end of described bonding wire 13 is connected with the routing piece 5 in described shell, then lead to
Cross ultrasonic bond and process and the other end of described bonding wire 13 is connected with the bonding region of described chip 11, control ultrasonic bond to process
In relative ultrasonic power be 135W, relatively ultrasonic time is 250ms, and ultrasonic pressure is 25gf relatively；
Described bonding wire 13 is aluminium wire, a diameter of 250 μm, and purity is 99.99%；
3) parallel seam welding
By parallel seam welding, the sealing of described metal cover board 7 is fixed at opening above described becket frame 6, control point
Weldering power is 1500W, and seam welding power is 1700W, and seam welding pressure is 1.1N, and the pulse period is 100ms, and pulse width is 8ms, speed
Spend for 2.6mm/s；So far diode preparation completes.
The method and apparatus of the not detailed description of the present invention is prior art, repeats no more.
Specific embodiment used herein is set forth to the principle of the present invention and embodiment, above example
Illustrate that being only intended to help understands the method for the present invention and its core concept.It should be pointed out that the common skill for the art
For art personnel, under the premise without departing from the principles of the invention, the present invention can also be carried out with some improvement and modify, these change
Enter and modify in the protection domain also falling into the claims in the present invention.
Claims (7)
1. a kind of highly reliable surface-pasted diode is it is characterised in that including the shell for encapsulation, chip, being used for institute
State solder and the bonding wire for being connected the electrode of described chip with the electrode of shell that chip is fixed on described shell；
Described shell includes two pieces of conducting strips, metal connecting post, base of ceramic, molybdenum sheet, routing piece, becket frame and crown cap
Plate；
Pit for placing described chip is offered on the portion of upper surface of described base of ceramic, on the inner bottom surface of described pit
Offer the first connecting hole, the remaining upper surface of described base of ceramic offers the second connecting hole, the four of described base of ceramic
Side metal layer is provided with all sides；
Described molybdenum sheet is fixed in the pit on described base of ceramic by soldering and covers the first connecting hole in described pit；
Described routing piece is fixed on the remaining upper surface of described base of ceramic by soldering and covers described second connecting hole；
Described conducting strip is fixed on the bottom surface of described base of ceramic by soldering；
It is provided with the upper end of metal connecting post in metal connecting post, and described first connecting hole and institute in described first connecting hole
State the lower surface soldering connection of molybdenum sheet, the lower end of metal connecting post in described first connecting hole is upper with one piece of described conducting strip
Surface soldering connection；
It is provided with the upper end of metal connecting post in metal connecting post, and described second connecting hole and institute in described second connecting hole
State the lower surface soldering connection of routing piece, the lower end of metal connecting post in described second connecting hole and another piece of described conducting strip
Upper surface soldering connection；
Described becket frame is fixed at the surrounding edge on the upper surface of described base of ceramic by soldering；
Described metal cover board is fixed at opening above described becket frame by parallel seam welding sealing；
Described chip is sintered to fix on described molybdenum sheet by solder；
One end of described bonding wire is connected with the bonding region of described chip, and in the other end of described bonding wire and described shell
Routing piece connects.
2. diode according to claim 1 is it is characterised in that the back side of described chip is provided with three layers composite metal
Layer, titanium-nickel-silver successively from inside to outside, the front of described chip is aluminium lamination, and the thickness of described aluminium lamination is more than 2 microns.
3. diode according to claim 1 is it is characterised in that described solder is slicker solder silver solder.
4. diode according to claim 1 it is characterised in that described bonding wire be aluminium wire, a diameter of 250 μm.
5. a kind of preparation method of the highly reliable surface-pasted diode described in claim 1 is it is characterised in that include following
Step：
1) chip sintering：
After die Bonder temperature stabilization, it is fully contacted with sintering zone with the preheating zone of sintering furnace respectively with the temperature measuring head of point thermometer,
Control preheating zone and sintering zone surface temperature in process conditions prescribed limit；
Then take out shell from nitrogen cabinet, then start supply hydrogen and nitrogen into sintering furnace, control hydrogen flowing quantity is
600mL/min ± 100mL/min, nitrogen flow is 5L/min ± 1L/min；
Take a shell to put and carry out the pre-heat treatment to preheating zone, control preheating zone surface temperature to be 200 DEG C ± 5 DEG C, preheating time
For 4min～6min；
Then shell is put and be sintered to sintering zone, control sintering zone surface temperature to be 400 DEG C ± 10 DEG C, sintering time
It is not more than 2min；
Then pick up welding wire, make wire tip contact the molybdenum sheet of shell, wire tip melted by heat becomes solder droplets in the molybdenum of shell
On piece, then chip is lain on solder, moving chip is until the outside of the surrounding edge of chip is it can be seen that solder；
Then bluff piece of going bail for lies on chip, then the shell with chip is placed on nitrogen nozzle and is cooled down, so
After push screening glass 2s～3s, take off screening glass after cooling 10min；
2) ultrasonic bond
First pass through ultrasonic bond and process and one end of described bonding wire is connected with the routing piece in described shell, then pass through ultrasonic key
Close to process and the other end of described bonding wire is connected with the bonding region of described chip, relatively ultrasonic in controlling ultrasonic bond to process
Power is 100～150W, and ultrasonic time is 150～300ms relatively, and ultrasonic pressure is 20～26gf relatively；
3) parallel seam welding
By parallel seam welding, the sealing of described metal cover board is fixed at opening above described becket frame, controls spot welding power
For 1400W～1600W, seam welding power is 1600W～1800W, and seam welding pressure is 0.98N～1.176N, and the pulse period is 90ms
～110ms, pulse width is 6ms～10ms, and speed is 2.0mm/s～3.0mm/s；So far diode preparation completes.
6. it is characterised in that described welding wire is slicker solder silver wire, composition is preparation method according to claim 5
Pb92.5% Sn5% Ag2.5%.
7. preparation method according to claim 5 is it is characterised in that described bonding wire is aluminium wire, a diameter of 250 μm, pure
Degree is more than or equal to 99.99%.
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| CN201611083008.4A CN106409772B (en) | 2016-11-30 | 2016-11-30 | Highly reliable surface-pasted diode of one kind and preparation method thereof |
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| CN201611083008.4A CN106409772B (en) | 2016-11-30 | 2016-11-30 | Highly reliable surface-pasted diode of one kind and preparation method thereof |
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| CN106409772A true CN106409772A (en) | 2017-02-15 |
| CN106409772B CN106409772B (en) | 2019-01-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107452723A (en) * | 2017-07-26 | 2017-12-08 | 济南市半导体元件实验所 | A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof |
| CN109712895A (en) * | 2018-12-21 | 2019-05-03 | 中国电子科技集团公司第四十七研究所 | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring |
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| JP2001102468A (en) * | 1999-09-29 | 2001-04-13 | Nec Corp | Ceramic package for electronic device |
| JP2005268333A (en) * | 2004-03-16 | 2005-09-29 | Mitsubishi Electric Corp | Ceramic package |
| CN205303443U (en) * | 2015-12-16 | 2016-06-08 | 济南市半导体元件实验所 | A highly reliable tube for encapsulating semiconductor device |
| CN206210768U (en) * | 2016-11-30 | 2017-05-31 | 济南市半导体元件实验所 | A kind of highly reliable surface-pasted diode |
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| JP2001102468A (en) * | 1999-09-29 | 2001-04-13 | Nec Corp | Ceramic package for electronic device |
| JP2005268333A (en) * | 2004-03-16 | 2005-09-29 | Mitsubishi Electric Corp | Ceramic package |
| CN205303443U (en) * | 2015-12-16 | 2016-06-08 | 济南市半导体元件实验所 | A highly reliable tube for encapsulating semiconductor device |
| CN206210768U (en) * | 2016-11-30 | 2017-05-31 | 济南市半导体元件实验所 | A kind of highly reliable surface-pasted diode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107452723A (en) * | 2017-07-26 | 2017-12-08 | 济南市半导体元件实验所 | A kind of high-power silicon carbide schottky rectifier bridge and preparation method thereof |
| CN107452723B (en) * | 2017-07-26 | 2023-09-15 | 济南市半导体元件实验所 | High-voltage high-power silicon carbide Schottky rectifier bridge and preparation method thereof |
| CN109712895A (en) * | 2018-12-21 | 2019-05-03 | 中国电子科技集团公司第四十七研究所 | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring |
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| Publication number | Publication date |
|---|---|
| CN106409772B (en) | 2019-01-22 |
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Effective date of registration: 20240131 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250101 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Country or region after: China Address before: 250014 No. 51 Heping Road, Lixia District, Shandong, Ji'nan Patentee before: JINAN SEMICONDUCTOR Research Institute Country or region before: China |