CN109712895A - A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring - Google Patents
A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring Download PDFInfo
- Publication number
- CN109712895A CN109712895A CN201811571930.7A CN201811571930A CN109712895A CN 109712895 A CN109712895 A CN 109712895A CN 201811571930 A CN201811571930 A CN 201811571930A CN 109712895 A CN109712895 A CN 109712895A
- Authority
- CN
- China
- Prior art keywords
- gold
- solder ring
- seam welding
- parallel seam
- tin eutectic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring, belongs to integrated circuit electronic encapsulation technology field.Ceramic cartridge and cover board are put into parallel seam sealing machine are baked and banked up with earth in advance first by this method, and then the cover board with solder ring is placed on shell and is aligned, and form assembly；Applying pressure to assembly makes to fit closely between cover board and shell；Then it is sealed using parallel seam welding, technological parameter are as follows: power 1300-1500W, pulsewidth 5-7ms, pulse period 60-80ms, electrode pressure 100-150N, seam weld speed 1.0-1.5mm/s.After being sealed using the method for the present invention, the leak detection rate of air-leakage test is less than 5x10‑9Pa·mm3/s。
Description
Technical field
The present invention relates to integrated circuit electronic encapsulation technology fields, and in particular to a kind of based on gold-tin eutectic solder ring
Ceramic shell parallel seam welding encapsulating method.
Background technique
The seal process of integrated circuit at present with gold-tin eutectic solder ring generally uses low sintering encapsulating method.
Low sintering encapsulating method be exactly by the gold-tin eutectic solder ring between shell, cover board and package lid by
Order closed assembly gets up, and is pre-tightened using special fixture, applies pressure, the fixture pulled tight in advance and circuit are placed into sintering
It is heated at high temperature in furnace, gold-tin eutectic solder ring is made to be melted into liquid from solid-state, it, will after sufficiently melting and excluding bubble
Fixture and circuit take out, and make solder cooled and solidified, and shell, cover board, golden tin solder combine together later, that is, complete circuit
Sealing.
But above-mentioned encapsulating method there is a situation where not applicable: the first, the temperature that is resistant to of the chip in circuit is lower, no
300 DEG C be resistant in low-temperature sintering sealing；The second, certain encapsulation auxiliary materials in circuit, such as conducting resinl are not resistant to low temperature
300 DEG C of high temperature of sintering；Other alloy welding manners are used in third, circuit, such as the welding of chip is also gold-tin alloy
Weld tabs, second melting can be caused by reusing golden tin solder ring and doing low-temperature sintering and seal, and increase voidage.
Parallel seam welding sealing is a kind of spot welding seal mode, applies pressure by using electrode and is put using pulse mode
Electricity, electric discharge can heat up to a single-point region every time, melt this single-point region, as electrode is along the flat of cover board
Row rolls, and the single-point region of thawing constantly elapses, and the region melted before gradually cools down, and it is continuously dotted to ultimately form a row
Welding structure.
Proposed adoption parallel seam welding sealing means of the present invention carry out the sealing of integrated circuit, but during equality seam weld, weldering
Actual temperature near seam position passes through more than 1000 DEG C, even as high as 1600-1700 DEG C.Therefore, it is actually formed the mistake of seam weld
Cheng Zhong usually will appear a biggish temperature gradient with ceramic cartridge binding site in solder ring and generate a degree of
Thermal stress, such as the process is not controlled properly, and the thermal stress of generation will lead to the cracking between solder ring and ceramic cartridge.In addition, work
Skill parameter setting is improper, also can directly bring the problem of gas leakage.
Summary of the invention
The purpose of the present invention is to provide a kind of ceramic shell parallel seam welding sealing side based on gold-tin eutectic solder ring
Method, this method can be realized the accurate control to different circuit sealing situations, guarantee that circuit air-tightness meets product requirement.
To achieve the above object, the technical solution adopted in the present invention is as follows:
A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring, this method comprises the following steps:
(1) ceramic cartridge and cover board are put into parallel seam sealing machine and are baked and banked up with earth in advance, to remove steam therein and other oxygen
Compound；It is taken out after prebake；
(2) cover board with solder ring is placed on shell and is aligned, form assembly；
(3) pressure is applied to assembly, makes to fit closely between cover board and shell；
(4) it is sealed using parallel seam welding.
In above-mentioned steps (1), the pre- temperature baked and banked up with earth is 125 DEG C, and baking and banking up with earth the time in advance is for 24 hours.
In above-mentioned steps (3), pressure applied value is 1.5 pounds.
In above-mentioned steps (4), the parallel seam welding process parameter are as follows: power 1300-1500W, pulsewidth 5-7ms, arteries and veins
Rush period 60-80ms, electrode pressure 100-150N, seam weld speed 1.0-1.5mm/s.Preferred technological parameter are as follows: power
1380-1420W, pulsewidth 5-7ms, pulse period 70-78ms, electrode pressure 110-135N, seam weld speed 1.0-1.3mm/s.
Cover board used, solder ring and ceramic cartridge require as follows in the present invention:
The cover board is 4J42 alloy or 4J29 alloy；The solder ring is AuSn alloy, and Au content is in AuSn alloy
80wt.%, Sn content are 20wt.%；50 μm of solder ring thickness.
Region surface to be sealed is successively coated with nickel layer and layer gold on the ceramic cartridge, and nickel layer is internal layer, nickel layer thickness
1.3-8.9 μm, layer gold is outermost layer, 1.3-5.7 μm of layer gold thickness.
The advantages of the present invention are as follows:
1, circuit of the present invention using the sealing means of parallel seam welding come sealing-in with solder ring can sufficiently melt au soldering
Expect ring, low-temperature sintering sealing means is avoided the problems of integrally to heat to circuit.
2, the present invention formulates parallel seam welding technological parameter for specific cover board, solder ring and ceramic cartridge, guarantees solder
It is found after ring and ceramic cartridge welding without cracking and gas leakage situation.
3, after being sealed using the method for the present invention, air-leakage test result are as follows: leak detection rate is less than 5x10-9Pa·mm3/s。
Specific embodiment
Technical solution of the present invention is clearly and completely described below.
The present invention provides a kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring, this method pair
Cover board, solder ring and ceramic cartridge require as follows:
The cover board is 4J42 alloy or 4J29 alloy；The solder ring is AuSn alloy, and Au content is in AuSn alloy
80wt.%, Sn content are 20wt.%；50 μm of solder ring thickness.Region surface to be sealed is successively coated on the ceramic cartridge
Nickel layer and layer gold, nickel layer are internal layer, and 1.3-8.9 μm of nickel layer thickness, layer gold is outermost layer, 1.3-5.7 μm of layer gold thickness.
The parallel seam welding encapsulating method process is as follows:
(1) ceramic cartridge and cover board are put into parallel seam sealing machine and are baked and banked up with earth in advance, to remove in raw material and air
Steam and other oxides；It is taken out after prebake；
(2) cover board with solder ring is placed on shell and is aligned, form assembly；
(3) 1.5 pounds of pressure are applied to assembly, makes to fit closely between cover board and shell；
(4) it is sealed using parallel seam welding.
Embodiment 1:
Using DIP28 shell and the cover board with solder ring implements encapsulation process.15 quill housings and cover board are got, using useless
Chip carries out golden tin solder bonding die, puts it into parallel seam welding baking oven after bonding die, carries out 125 DEG C and bake and bank up with earth in advance, removes raw material
And steam and other oxides in air.Shell is placed on fixture, draw cover board with sucking pen and cover board is placed on pipe
It is that side edge thereof is aligned with shell edge on shell, after so that cover board and shell is kept horizontality, pressure is applied to circuit, makes to cover
Plate is combined closely with shell, calls parallel seam welding technological parameter, and run program, and specific process parameter is individually debugging, debugging
According to being that shell cavity volume determines movement speed v, with reference to low temperature sintering technology, pressure N is selected, is determined according to experimental result
The melting situation of solder ring determines power P, pulsewidth and period, final decision parameter are as follows: power 1400w, pulsewidth 6ms, period
75ms, 120 Ns of electrode pressure, speed 1.2mm/s.Pulse current is discharged by electrode wheel, by the melting of solder ring and and shell
Cover board is freezing together, and circuit is taken out parallel seam welding after sealing.
Screening is carried out to circuit and D group is examined, content is as shown in the table.
After above-mentioned three kinds of circuits are screened and D group is examined, gas leakage situation, respectively less than 5x10 are checked-9Pa·mm3/ s, as a result
Pass through, inspection result checks circuit performance without gas leakage circuit, qualified.
Claims (8)
1. a kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring, it is characterised in that: this method includes
Following steps:
(1) ceramic cartridge and cover board are put into parallel seam sealing machine and are baked and banked up with earth in advance, to remove steam therein and other oxidations
Object；It is taken out after prebake；
(2) cover board with solder ring is placed on shell and is aligned, form assembly；
(3) pressure is applied to assembly, makes to fit closely between cover board and shell；
(4) it is sealed using parallel seam welding.
2. the ceramic shell parallel seam welding encapsulating method according to claim 1 based on gold-tin eutectic solder ring, feature
Be: in step (1), the pre- temperature baked and banked up with earth is 125 DEG C, and baking and banking up with earth the time in advance is for 24 hours.
3. the ceramic shell parallel seam welding encapsulating method according to claim 1 based on gold-tin eutectic solder ring, feature
Be: in step (3), pressure applied value is 1.5 pounds.
4. the ceramic shell parallel seam welding encapsulating method according to claim 1 based on gold-tin eutectic solder ring, feature
It is: in step (4), the parallel seam welding process parameter are as follows: power 1300-1500W, pulsewidth 5-7ms, pulse period
60-80ms, electrode pressure 100-150N, seam weld speed 1.0-1.5mm/s.
5. the ceramic shell parallel seam welding encapsulating method according to claim 4 based on gold-tin eutectic solder ring, feature
It is: in step (4), the parallel seam welding process parameter are as follows: power 1380-1420W, pulsewidth 5-7ms, pulse period
70-78ms, electrode pressure 110-135N, seam weld speed 1.0-1.3mm/s.
6. the ceramic shell parallel seam welding encapsulating method according to claim 1 based on gold-tin eutectic solder ring, feature
Be: the cover board is 4J42 alloy or 4J29 alloy；The solder ring is AuSn alloy, and Au content is in AuSn alloy
80wt.%, Sn content are 20wt.%；50 μm of solder ring thickness.
7. the ceramic shell parallel seam welding encapsulating method according to claim 1 based on gold-tin eutectic solder ring, feature
Be: region surface to be sealed is successively coated with nickel layer and layer gold on the ceramic cartridge, and nickel layer is internal layer, nickel layer thickness 1.3-
8.9 μm, layer gold is outermost layer, 1.3-5.7 μm of layer gold thickness.
8. the ceramic shell parallel seam welding encapsulating method according to claim 1 based on gold-tin eutectic solder ring, feature
Be: after this method sealing, air-leakage test result: leak detection rate is less than 5x10-9Pa·mm3/s。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811571930.7A CN109712895A (en) | 2018-12-21 | 2018-12-21 | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811571930.7A CN109712895A (en) | 2018-12-21 | 2018-12-21 | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109712895A true CN109712895A (en) | 2019-05-03 |
Family
ID=66255941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811571930.7A Pending CN109712895A (en) | 2018-12-21 | 2018-12-21 | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109712895A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128761A (en) * | 2019-12-31 | 2020-05-08 | 中国电子科技集团公司第四十七研究所 | Cavity control method in gold-tin alloy sealing process of super-large integrated circuit |
| CN111128757A (en) * | 2019-12-31 | 2020-05-08 | 中国电子科技集团公司第四十七研究所 | Method for controlling water vapor and hydrogen content in integrated circuit sealed cavity |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5942186A (en) * | 1982-09-02 | 1984-03-08 | Kobe Steel Ltd | Welding method of metallic material |
| JPH08141745A (en) * | 1994-11-22 | 1996-06-04 | Nippon Avionics Co Ltd | Hermetic sealing method of ic |
| CN201455538U (en) * | 2009-08-10 | 2010-05-12 | 太原艺星科技有限公司 | Parallel seam welder |
| CN103056500A (en) * | 2012-11-30 | 2013-04-24 | 北京时代民芯科技有限公司 | Welding method for semiconductor ceramic shell sealing cap |
| CN106346122A (en) * | 2015-07-15 | 2017-01-25 | 武汉凯奇特种焊接设备有限责任公司 | Resistance welding technology with online continuous weld heat treatment |
| CN106409772A (en) * | 2016-11-30 | 2017-02-15 | 济南市半导体元件实验所 | Highly reliable surface-mount diode and preparation method thereof |
-
2018
- 2018-12-21 CN CN201811571930.7A patent/CN109712895A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5942186A (en) * | 1982-09-02 | 1984-03-08 | Kobe Steel Ltd | Welding method of metallic material |
| JPH08141745A (en) * | 1994-11-22 | 1996-06-04 | Nippon Avionics Co Ltd | Hermetic sealing method of ic |
| CN201455538U (en) * | 2009-08-10 | 2010-05-12 | 太原艺星科技有限公司 | Parallel seam welder |
| CN103056500A (en) * | 2012-11-30 | 2013-04-24 | 北京时代民芯科技有限公司 | Welding method for semiconductor ceramic shell sealing cap |
| CN106346122A (en) * | 2015-07-15 | 2017-01-25 | 武汉凯奇特种焊接设备有限责任公司 | Resistance welding technology with online continuous weld heat treatment |
| CN106409772A (en) * | 2016-11-30 | 2017-02-15 | 济南市半导体元件实验所 | Highly reliable surface-mount diode and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128761A (en) * | 2019-12-31 | 2020-05-08 | 中国电子科技集团公司第四十七研究所 | Cavity control method in gold-tin alloy sealing process of super-large integrated circuit |
| CN111128757A (en) * | 2019-12-31 | 2020-05-08 | 中国电子科技集团公司第四十七研究所 | Method for controlling water vapor and hydrogen content in integrated circuit sealed cavity |
| CN111128757B (en) * | 2019-12-31 | 2021-12-14 | 中国电子科技集团公司第四十七研究所 | Method for controlling water vapor and hydrogen content in integrated circuit sealed cavity |
| CN111128761B (en) * | 2019-12-31 | 2023-12-01 | 中国电子科技集团公司第四十七研究所 | Hole control method in gold-tin alloy sealing process of oversized integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105280565B (en) | A kind of power module architectures for improving welding quality | |
| CN103056500B (en) | The welding method of semiconductive ceramic case cap | |
| CN105826458B (en) | A kind of DPC ceramic substrate preparation methods with metal box dam | |
| JPH10308465A (en) | Cast metal seal for semiconductor substrate | |
| CN105428266B (en) | The product of flip-chip eutectic bonding method and acquisition with medium bridge | |
| RU2012118975A (en) | METHOD FOR COMPOSITE SEALING FOR VACUUM GLASS | |
| JPWO2008149584A1 (en) | Electronic component device and manufacturing method thereof | |
| CN109712895A (en) | A kind of ceramic shell parallel seam welding encapsulating method based on gold-tin eutectic solder ring | |
| CN109514018A (en) | A kind of golden tin ring seal cover process method of semiconductor devices | |
| CN105562863B (en) | A kind of device welding method | |
| CN105428267B (en) | Highly reliable extra small metal ceramic surface pastes the packaging technology of device | |
| JP2011165745A (en) | Ceramic package | |
| CN110418518A (en) | A kind of process improving IGBT module terminal weld strength | |
| JPWO2011027762A1 (en) | Wiring connection method and functional device | |
| TW201839944A (en) | Package structure and manufacturing method thereof | |
| CN104952808A (en) | Presetting gold-tin cover plate and manufacturing method thereof | |
| CN106735895B (en) | A kind of method for laser welding of aluminium alloy-glass composite material | |
| CN108598060A (en) | A kind of micro- stomata power electronics modules and preparation method thereof | |
| CN106552990A (en) | A kind of inside micro-bonding method of paster potentiometer | |
| JP5310309B2 (en) | Solder coat lid | |
| CN106409772A (en) | Highly reliable surface-mount diode and preparation method thereof | |
| CN108695178A (en) | A kind of micro- stomata cleaning welding method of power electronics modules | |
| CN208589436U (en) | A kind of micro- stomata power electronics modules | |
| CN206194725U (en) | Highly reliable surface mounting's of current rush of chinese people's anti -Japanese military and political college diode | |
| CN112151400A (en) | Method for solving SMD tube shell bonding point gold-aluminum system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |