CN206210768U - A kind of highly reliable surface-pasted diode - Google Patents
A kind of highly reliable surface-pasted diode Download PDFInfo
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- CN206210768U CN206210768U CN201621302083.0U CN201621302083U CN206210768U CN 206210768 U CN206210768 U CN 206210768U CN 201621302083 U CN201621302083 U CN 201621302083U CN 206210768 U CN206210768 U CN 206210768U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000919 ceramic Substances 0.000 claims abstract description 32
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 238000003466 welding Methods 0.000 claims abstract description 14
- 238000005476 soldering Methods 0.000 claims description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 17
- 239000004411 aluminium Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000003475 lamination Methods 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 241000500881 Lepisma Species 0.000 claims description 5
- QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical compound [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 25
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 abstract description 5
- 230000004048 modification Effects 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract description 3
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000012216 screening Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
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Abstract
The utility model discloses the highly reliable surface-pasted diode of one kind, the diode component uses ceramic and metal package, chip is sintered to fix in the sintering zone of shell by solder, the bonding region of chip is connected and parallel seam welding sealing with the bonding region of shell with bonding wire by the way of ultrasonic bond, overcome the problem that original plastic packaged device cannot be used for highly reliable devices field because working environment is limited, the surface mount diode makes original circuit that in situ replacement is realized in the case where pad size i.e. circuit board is not changed without modification, and reliability is improved, production and processing technology is simpler, it is easy to produce in enormous quantities.
Description
Technical field
The utility model is related to technical field of semiconductor encapsulation, more particularly, to highly reliable surface-pasted two pole of one kind
Pipe.
Background technology
At present, the field such as space flight, aviation, ship, weapons largely uses certain electric current or the surface mount diode of power
Device, it is desirable to the features such as thermal resistance is small, impact resistance is good, reliability is high, premise is provided to improve whole aircraft reliability.
At present, most of surface-pasted diode component with certain electric current or power is Plastic Package.
The semiconductor devices of Plastic Package, is shown in Fig. 1, by plastic packaging material and production technology limited its operating temperature range and
Reliability all can not meet the use requirement of adverse circumstances, particularly be unable to long-term work in the case of moist and salt gas weight,
The characteristics of its encapsulation, determines that it cannot be used for highly reliable field.
Therefore, how to provide that a kind of reliability is high and production and processing technology is simpler, be easy to the diode produced in enormous quantities
Device is the problem of those skilled in the art's urgent need to resolve.
Utility model content
The purpose of this utility model is to provide a kind of highly reliable surface-pasted diode, and the reliability of the diode is high
And production and processing technology is simpler, it is easy to produce in enormous quantities.
To solve above-mentioned technical problem, the technical scheme that the utility model is provided is：
A kind of highly reliable surface-pasted diode, including for encapsulate shell, chip, for the chip to be fixed
In the solder on the shell and the bonding wire for the electrode of the chip to be connected with the electrode of shell；
The shell includes two blocks of conducting strips, metal connecting pole, base of ceramic, molybdenum sheet, routing piece, becket frame and gold
Category cover plate；
The pit for placing the chip, the interior bottom of the pit are offered on the portion of upper surface of the base of ceramic
The first connecting hole is offered on face, the second connecting hole, the base of ceramic are offered on the remaining upper surface of the base of ceramic
Surrounding side on be provided with side metalization layer；
In the pit that the molybdenum sheet is fixed on the base of ceramic by soldering and cover the first company in the pit
Connect hole；
The routing piece is fixed on the remaining upper surface of the base of ceramic by soldering and covers second connection
Hole；
The conducting strip is fixed on the bottom surface of the base of ceramic by soldering；
The upper end of the metal connecting pole being provided with first connecting hole in metal connecting pole, and first connecting hole
With the lower surface soldering connection of the molybdenum sheet, the lower end of the metal connecting pole in first connecting hole and one piece of conducting strip
Upper surface soldering connection；
The upper end of the metal connecting pole being provided with second connecting hole in metal connecting pole, and second connecting hole
With the lower surface soldering connection of the routing piece, the lower end of the metal connecting pole in second connecting hole is led with described in another piece
The upper surface soldering connection of electric piece；
At the surrounding edge that the becket frame is fixed on the upper surface of the base of ceramic by soldering；
The metal cover board is sealed by parallel seam welding and is fixed on above the becket frame at opening；
The chip is sintered to fix on the molybdenum sheet by solder；
One end of the bonding wire is connected with the bonding region of the chip, and the other end of the bonding wire and the shell
In routing piece connection.
Preferably, the back side of the chip is provided with three layers composite metalization layer, and titanium-nickel-silver successively, described from inside to outside
The front of chip is aluminium lamination, and the thickness of the aluminium lamination is more than 2 microns.
Preferably, the solder is slicker solder silver solder.
Preferably, the bonding wire is aluminium wire, a diameter of 250 μm.
Compared with prior art, the utility model provides a kind of highly reliable surface-pasted diode, and the application is used
Ceramic and metal package meets reliability requirement of the semiconductor devices to shell, meets the circuit in semiconductor devices to sealing
With the requirement of dielectric withstanding voltage high, and simple structure, and the shell adapts to the encapsulation of polytype chip, particularly
The encapsulation of the chip for needing to be bonded many bonding wires or line row or sinter conduction band with big surge current, ceramic and metal package belongs to
Sealing shell, can solve plastic packaged device moisture suction problem in wet condition, ceramic and metal package work temperature
Degree scope is wider than plastic packaging, have the plastic packaged device of certain electric current or power requirement operating temperature it is general 85 DEG C with
Under, and ceramic and metal package can realize the limit of working temperature scope of chip；
By solder be sintered to fix on the sintering zone of shell chip by the application, is carried out quickly using low-temperature alloy solder
Alloy sintering, solves the problems, such as the matched coefficients of thermal expansion between housing base material and chip, coordinates nitrogen in sintering process
The control of hydrogen protective atmosphere prevents the appearance of oxide layer, reduces the shadow of sintering temperature and sintering time to product high-temperature behavior
Ring；
One of limited reason of plastic packaged device operating temperature is coupled together by way of sintering between exit,
When temperature change is larger, the different generation internal stress of thermal coefficient of expansion of different materials cannot discharge, it is easy to cause chip to damage
Hinder and cause component failure, be this application by the way of ultrasonic bond with bonding wire the bonding region of chip and the key of shell
Close area to be connected, adopt high-purity aluminium wire ultrasonic bond, bonding wire has certain radian, material thermal expansion coefficient is different in temperature change
The internal stress of generation can be discharged, it is ensured that the reliability of semiconductor devices work, while being carried out to device before bonding
Plasma cleaning, oxide layer and impurity on removal chip surface, wire bonding area, it is ensured that contact reliable between sintering solder joint,
So as to ensure product long-term reliability；
Finally take the mode of parallel seam welding that the cover plate in shell is sealed connected together with the becket frame in shell,
Formed one sealing entirety so that the utility model product be cavities seals device, relative to plastic device semitight and
Speech, its quality and reliability are increased dramatically.
To sum up, this application provides the highly reliable surface-pasted diode of one kind, the diode component uses cermet
Shell, chip are by way of solder is sintered to fix in the sintering zone of shell, using ultrasonic bond with bonding wire the key of chip
Close area to be connected with the bonding region of shell and parallel seam welding sealing, overcome original plastic packaged device because working environment is limited not
The problem of highly reliable devices field can be used for, the surface mount diode to make original circuit not change pad size i.e. circuit
Plate without modification in the case of realize it is in situ substitute, and reliability is improved, and production and processing technology is simpler, is easy to large quantities of
Amount production.
Brief description of the drawings
Fig. 1 is the structural representation of surface pasted plastic packaged device in the prior art；
The decomposition texture of the shell of a kind of highly reliable surface-pasted diode that Fig. 2 is provided for the utility model embodiment
Schematic diagram；
Fig. 3 removes the structural representation of the base of ceramic after cover plate and becket frame for the shell in Fig. 2；
The sectional structure of a kind of highly reliable surface-pasted diode that Fig. 4 is provided for the utility model embodiment is illustrated
Figure；
Fig. 5 is the front view of the diode in Fig. 4；
Fig. 6 is the upward view of the diode in Fig. 4.
In figure：1 conducting strip, 2 metal connecting poles, 3 base of ceramic, 4 molybdenum sheets, 5 routing pieces, 6 becket frames, 7 metal cover boards,
8 second connecting holes, 9 side metalizations layer, 10 pits, 11 chips, 12 solders, 13 bonding wires.
Specific embodiment
It is new below in conjunction with this practicality to make the purpose, technical scheme and advantage of the utility model embodiment clearer
Accompanying drawing in type embodiment, is clearly and completely described, it is clear that retouched to the technical scheme in the utility model embodiment
The embodiment stated is a part of embodiment of the present utility model, rather than whole embodiments.Based on the reality in the utility model
Apply example, the every other embodiment that those of ordinary skill in the art are obtained on the premise of creative work is not made, all
Belong to the scope of the utility model protection.
In description of the present utility model, it is to be understood that term " " center ", " axial direction ", " radial direction ", " longitudinal direction ", " horizontal stroke
To ", " length ", " width ", " on ", D score, "front", "rear", "left", "right", " top ", " bottom ", " interior ", " outward ", " clockwise ",
The orientation or position relationship of the instruction such as " counterclockwise ", " vertical ", " level " are based on orientation shown in the drawings or position relationship, only
It is to be described with simplified for the ease of description the utility model, must be with spy rather than the device or element for indicating or imply meaning
Fixed orientation, with specific azimuth configuration and operation, therefore it is not intended that to limitation of the present utility model.
In the utility model, unless otherwise clearly defined and limited, fisrt feature second feature it " on " or it
D score, can include the first and second feature directly contacts, it is also possible to including the first and second features be not directly contact but
By the other characterisation contact between them.And, fisrt feature second feature " on ", " top " and " above " include
Fisrt feature is in the surface and oblique upper of second feature, or is merely representative of fisrt feature level height higher than second feature.
Fisrt feature second feature " under ", " lower section " and " below " include fisrt feature in the underface of second feature and tiltedly under
Side, or fisrt feature level height is merely representative of less than second feature.
Reference picture 1~Fig. 6, Fig. 1 are the structural representation of surface pasted plastic packaged device in the prior art；Fig. 2 is this practicality
The decomposition texture schematic diagram of the shell of a kind of highly reliable surface-pasted diode that new embodiment is provided；Fig. 3 is in Fig. 2
Shell removes the structural representation of the base of ceramic after cover plate and becket frame；Fig. 4 for the utility model embodiment provide one
Plant the cross section structure diagram of highly reliable surface-pasted diode；Fig. 5 is the front view of the diode in Fig. 4；Fig. 6 is Fig. 4
In diode upward view.
This application provides the highly reliable surface-pasted diode of one kind, including for encapsulate shell, chip 11, be used for
Solder 12 that the chip 11 is fixed on the shell and for the electrode of the electrode of the chip 11 and shell to be connected
The bonding wire 13 for connecing；
The shell includes two pieces of conducting strips 1, metal connecting pole 2, base of ceramic 3, molybdenum sheet 4, routing piece 5, becket frames 6
And metal cover board 7；
The pit 10 for placing the chip 11, the pit are offered on the portion of upper surface of the base of ceramic 3
The first connecting hole is offered on 10 inner bottom surface, the second connecting hole 8, institute are offered on the remaining upper surface of the base of ceramic 3
State and side metalization layer 9 is provided with the surrounding side of base of ceramic 3；
In the pit 10 that the molybdenum sheet 4 is fixed on the base of ceramic 3 by soldering and cover the pit 10
First connecting hole；
The routing piece 5 is fixed on the remaining upper surface of the base of ceramic 3 by soldering and covers described second and connected
Connect hole 8；
The conducting strip 1 is fixed on the bottom surface of the base of ceramic 3 by soldering；
The metal connecting pole 2 being provided with first connecting hole in metal connecting pole 2, and first connecting hole it is upper
The lower surface soldering connection with the molybdenum sheet 4 is held, the lower end of the metal connecting pole 2 in first connecting hole is led with described in one piece
The upper surface soldering connection of electric piece 1；
The metal connecting pole 2 being provided with second connecting hole 8 in metal connecting pole 2, and second connecting hole 8
The lower surface soldering connection of upper end and the routing piece 5, the lower end of the metal connecting pole 2 in second connecting hole 8 with it is another
The upper surface soldering connection of conducting strip 1 described in block；
At the surrounding edge that the becket frame 6 is fixed on the upper surface of the base of ceramic 3 by soldering；
The metal cover board 7 is sealed by parallel seam welding and is fixed on above the becket frame 6 at opening；
The chip 11 is sintered to fix on the molybdenum sheet 4 by solder 12；
One end of the bonding wire 13 is connected with the bonding region of the chip 11, and the bonding wire 13 the other end and institute
The routing piece 5 stated in shell is connected.
In one embodiment of the present utility model, the back side of the chip 11 is provided with three layers composite metalization layer, from
It is interior to titanium-nickel-silver successively outward, the front of the chip 11 is aluminium lamination, and the thickness of the aluminium lamination is more than 2 microns.
In one embodiment of the present utility model, the solder 12 is slicker solder silver solder.
In one embodiment of the present utility model, the bonding wire 13 is aluminium wire, a diameter of 250 μm.
Present invention also provides a kind of preparation method of above-mentioned highly reliable surface-pasted diode, including following step
Suddenly：
1) chip sintering：
After after die Bonder temperature stabilization, fully connect with sintering zone with the preheating zone of sintering furnace respectively with the temperature measuring head of point thermometer
Touch, control preheating zone and sintering zone surface temperature are in process conditions prescribed limit；
Then shell is taken out from nitrogen cabinet, then starts, to hydrogen and nitrogen is supplied in sintering furnace, to control hydrogen flowing quantity
It is 600mL/min ± 100mL/min, nitrogen flow is 5L/min ± 1L/min；
Taking a shell and putting to preheating zone carries out the pre-heat treatment, controls preheating zone surface temperature for 200 DEG C ± 5 DEG C, preheating
Time is 4min~6min；
Then shell is put to sintering zone and is sintered, control sintering zone surface temperature for 400 DEG C ± 10 DEG C, sintering
Time is not more than 2min；
Then welding wire is picked up, wire tip is contacted the molybdenum sheet 4 of shell, wire tip melted by heat is into solder droplets in shell
Molybdenum sheet 4 on, then chip 11 is lain on solder 12, moving chip 11 is until the outside of surrounding edge of chip 11 can
See solder 12；
Then bluff piece of going bail for is lain on chip 11, and the shell with chip 11 then is placed on into nitrogen nozzle is carried out
Cooling, then pushes screening glass 2s~3s, and screening glass is removed after cooling 10min；
2) ultrasonic bond
First pass through ultrasonic bond treatment to be connected one end of the bonding wire 13 with the routing piece 5 in the shell, then lead to
Cross ultrasonic bond treatment to be connected the other end of the bonding wire 13 with the bonding region of the chip 11, control ultrasonic bond treatment
In relative ultrasonic power be 100~150W, relative ultrasonic time is 150~300ms, is 20~26gf with respect to ultrasonic pressure；
3) parallel seam welding
The metal cover board 7 is sealed by parallel seam welding is fixed on above the becket frame 6 at opening, control point
Weldering power is 1400W~1600W, and seam weld power is 1600W~1800W, and seam weld pressure is 0.98N~1.176N, pulse period
It is 90ms~110ms, pulse width is 6ms~10ms, and speed is 2.0mm/s~3.0mm/s；So far diode is prepared and completed.
In one embodiment of the present utility model, the welding wire be slicker solder silver wire, composition be Pb92.5%-
Sn5%-Ag2.5%.
In one embodiment of the present utility model, the bonding wire 13 be aluminium wire, a diameter of 250 μm, purity more than etc.
In 99.99%.
For a further understanding of the utility model, with reference to a kind of highly reliable table that embodiment is provided the utility model
The preparation method of the diode of face attachment is described in detail, and protection domain of the present utility model is not limited by following examples
System.
Embodiment 1
A kind of preparation method of highly reliable surface-pasted diode, comprises the following steps：
1) chip sintering：
After after die Bonder temperature stabilization, fully connect with sintering zone with the preheating zone of sintering furnace respectively with the temperature measuring head of point thermometer
Touch, control preheating zone and sintering zone surface temperature are in process conditions prescribed limit；
Then shell is taken out from nitrogen cabinet, then starts, to hydrogen and nitrogen is supplied in sintering furnace, to control hydrogen flowing quantity
It is 600mL/min, nitrogen flow is 6L/min；
Taking a shell and putting to preheating zone carries out the pre-heat treatment, and it is 200 DEG C to control preheating zone surface temperature, and preheating time is
5min；
Then shell is put to sintering zone and is sintered, it is 410 DEG C to control sintering zone surface temperature, and sintering time is
1.5min；
Then welding wire is picked up, wire tip is contacted the molybdenum sheet 4 of shell, wire tip melted by heat is into solder droplets in shell
Molybdenum sheet 4 on, then chip 11 is lain on solder 12, moving chip 11 is until the outside of surrounding edge of chip 11 can
See solder 12；
The welding wire is slicker solder silver wire, and composition is Pb92.5%-Sn5%-Ag2.5%.
Then bluff piece of going bail for is lain on chip 11, and the shell with chip 11 then is placed on into nitrogen nozzle is carried out
Cooling, then pushes screening glass 3s, and screening glass is removed after cooling 10min；
2) ultrasonic bond
First pass through ultrasonic bond treatment to be connected one end of the bonding wire 13 with the routing piece 5 in the shell, then lead to
Cross ultrasonic bond treatment to be connected the other end of the bonding wire 13 with the bonding region of the chip 11, control ultrasonic bond treatment
In relative ultrasonic power be 135W, relative ultrasonic time is 250ms, is 25gf with respect to ultrasonic pressure；
The bonding wire 13 is aluminium wire, and a diameter of 250 μm, purity is 99.99%；
3) parallel seam welding
The metal cover board 7 is sealed by parallel seam welding is fixed on above the becket frame 6 at opening, control point
Weldering power is 1500W, and seam weld power is 1700W, and seam weld pressure is 1.1N, and the pulse period is 100ms, and pulse width is 8ms, speed
It is 2.6mm/s to spend；So far diode is prepared and completed.
The method and apparatus of the not detailed description of the utility model are prior art, repeat no more.
Specific embodiment used herein is set forth to principle of the present utility model and implementation method, and the above is implemented
The explanation of example is only intended to help and understands method of the present utility model and its core concept.It should be pointed out that for the art
Those of ordinary skill for, on the premise of the utility model principle is not departed from, the utility model can also be carried out some
Improve and modify, these are improved and modification is also fallen into the utility model scope of the claims.
Claims (4)
1. a kind of highly reliable surface-pasted diode, it is characterised in that including the shell for encapsulating, chip, for by institute
State solder and the bonding wire for the electrode of the chip to be connected with the electrode of shell that chip is fixed on the shell；
The shell includes two pieces of conducting strips, metal connecting pole, base of ceramic, molybdenum sheet, routing piece, becket frame and crown caps
Plate；
The pit for placing the chip is offered on the portion of upper surface of the base of ceramic, on the inner bottom surface of the pit
The first connecting hole is offered, the second connecting hole, the four of the base of ceramic are offered on the remaining upper surface of the base of ceramic
Side metalization layer is provided with all sides；
In the pit that the molybdenum sheet is fixed on the base of ceramic by soldering and cover the first connecting hole in the pit；
The routing piece is fixed on the remaining upper surface of the base of ceramic by soldering and covers second connecting hole；
The conducting strip is fixed on the bottom surface of the base of ceramic by soldering；
The upper end of the metal connecting pole being provided with first connecting hole in metal connecting pole, and first connecting hole and institute
State the lower surface soldering connection of molybdenum sheet, the lower end of the metal connecting pole in first connecting hole is upper with one piece of conducting strip
Surface soldering connection；
The upper end of the metal connecting pole being provided with second connecting hole in metal connecting pole, and second connecting hole and institute
State the lower surface soldering connection of routing piece, the lower end of the metal connecting pole in second connecting hole and another piece of conducting strip
Upper surface soldering connection；
At the surrounding edge that the becket frame is fixed on the upper surface of the base of ceramic by soldering；
The metal cover board is sealed by parallel seam welding and is fixed on above the becket frame at opening；
The chip is sintered to fix on the molybdenum sheet by solder；
One end of the bonding wire is connected with the bonding region of the chip, and in the other end of the bonding wire and the shell
Routing piece is connected.
2. diode according to claim 1, it is characterised in that the back side of the chip is provided with three layers composite metal
Layer, titanium-nickel-silver successively from inside to outside, the front of the chip is aluminium lamination, and the thickness of the aluminium lamination is more than 2 microns.
3. diode according to claim 1, it is characterised in that the solder is slicker solder silver solder.
4. diode according to claim 1, it is characterised in that the bonding wire is aluminium wire, a diameter of 250 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621302083.0U CN206210768U (en) | 2016-11-30 | 2016-11-30 | A kind of highly reliable surface-pasted diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621302083.0U CN206210768U (en) | 2016-11-30 | 2016-11-30 | A kind of highly reliable surface-pasted diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206210768U true CN206210768U (en) | 2017-05-31 |
Family
ID=58751136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621302083.0U Active CN206210768U (en) | 2016-11-30 | 2016-11-30 | A kind of highly reliable surface-pasted diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206210768U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373925A (en) * | 2016-11-30 | 2017-02-01 | 济南市半导体元件实验所 | High-reliability surface mounted diode resistant to impact of heavy currents and preparation method of diode |
| CN106409772A (en) * | 2016-11-30 | 2017-02-15 | 济南市半导体元件实验所 | Highly reliable surface-mount diode and preparation method thereof |
-
2016
- 2016-11-30 CN CN201621302083.0U patent/CN206210768U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373925A (en) * | 2016-11-30 | 2017-02-01 | 济南市半导体元件实验所 | High-reliability surface mounted diode resistant to impact of heavy currents and preparation method of diode |
| CN106409772A (en) * | 2016-11-30 | 2017-02-15 | 济南市半导体元件实验所 | Highly reliable surface-mount diode and preparation method thereof |
| CN106373925B (en) * | 2016-11-30 | 2018-07-20 | 济南市半导体元件实验所 | Highly reliable surface-pasted diode of a kind of heavy current impact and preparation method thereof |
| CN106409772B (en) * | 2016-11-30 | 2019-01-22 | 济南市半导体元件实验所 | Highly reliable surface-pasted diode of one kind and preparation method thereof |
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Effective date of registration: 20240508 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250101 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Country or region after: China Address before: 250014 No. 51 Heping Road, Lixia District, Shandong, Ji'nan Patentee before: JINAN SEMICONDUCTOR Research Institute Country or region before: China |