CN106378717A - Production method and application of multicrystal diamond tablet - Google Patents
Production method and application of multicrystal diamond tablet Download PDFInfo
- Publication number
- CN106378717A CN106378717A CN201610857939.9A CN201610857939A CN106378717A CN 106378717 A CN106378717 A CN 106378717A CN 201610857939 A CN201610857939 A CN 201610857939A CN 106378717 A CN106378717 A CN 106378717A
- Authority
- CN
- China
- Prior art keywords
- mixture
- post
- chip
- diamond
- blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
The invention discloses a production method of a multicrystal diamond tablet. The method is characterized by including the steps of 1, uniformly mixing diamond abrasive particles and binders; 2, adding adhesives into the mixtures for wetting the mixtures, uniformly stirring the mixtures and drying the mixtures to obtain cakes; 3, breaking the cakes and grading the cakes to obtain blank particles; 4, carrying out adhesive removing and high-temperature sintering operation on the blank particles to obtain large-particle multicrystal diamond abrasive particles; 5, adding matrix powder and adhesives into the multicrystal diamond abrasive particles and carrying out uniform mixing to obtain multicrystal mixtures, wherein the matrix powder is ceramic powder, metal powder or a combination of the ceramic powder and the metal powder; 6, making the multicrystal mixtures into a tablet blank of a certain shape through a die pressing method; and 7, carrying out adhesive removing and high-temperature sintering operation on the tablet blank formed through die pressing to obtain the multicrystal diamond abrasive tablet with excellent performance. The method has the advantages of being simple, high in rate of finished products and low in production cost and can be widely applied to the fields of grinding, cutting, honing and milling.
Description
Technical field
The present invention relates to a kind of material technology, especially a kind of preparation method of diamond tool, specifically a kind of
The Preparation method and use of polycrystalline diamond post-chip.
Background technology
Nineteen fifty-five, diamond synthesizes successfully in the U.S. first, is that base has been established in manufacture and the popularization of diamond tool
Plinth, is also that many unmanageable firmly crisp process for un-metal material industry bring dawn, when becoming the human history last time stroke simultaneously
The instrument revolution in generation.Diamond tool is that diamond particles are mixed by a certain percentage with the bonding agent such as metal, resin
Plant special composite.The fast development of difficult-to-machine material, the production to instrument has higher wanting from economy and performance
Ask, its key is exactly to improve wearability and the self-sharpening of diamond tool.
Diamond concentration is one of key character of diamond tool, and it has to the efficiency of instrument, life-span and processing effect
Very big impact.Usually, we define diamond volume ratio in carcass is that when 25%, concentration is 100.Cutting tools diamond
Concentration is 10-45；Boring tool, sintering metal binder diamond grinding tool mostly are 50-125；Resin-diamond grinding tool is 50-
100；Ceramic diamond abrasive tool is in 75-150；Concentration highest plating diamond tool is 200.Excessive concentration, working unit layer
Diamond particles number on area is just many, and the stress of each abrasive particle is just little, and the depth of incision workpiece is little, diamond not broken with
Come off, therefore easily by blunt, its macro manifestations is exactly that tool processes efficiency is low；And concentration too low when, each abrasive particle average
Incision pressure is big, and cutting-in is big, and diamond is broken to come off, and life tools are low.Therefore, take into account the gold of working (machining) efficiency and service life
Preparing of diamond tool is significant.
It is contemplated that propose a kind of new diamond lap polishing instrument of balance working (machining) efficiency and working life
Preparation method.
Content of the invention
The purpose of the present invention be for existing diamond tool in use Grain Falling Off too early or after blunt no
Method comes off it is difficult to realize the problem of self-training, proposes a kind of preparation with the excellent polycrystalline diamond post-chip from sharp characteristic
Method.
The technical scheme is that：
A kind of preparation method of polycrystalline diamond post-chip is it is characterised in that it comprises the following steps：
（1）Diamond abrasive grains and binding agent are measured by mass percentage, mix homogeneously makes mixture；Wherein diamond
The mass percent of abrasive grain is 50-95%, and remaining is binding agent；
（2）Add adhesive moistening to stir evenly, the knot after being dried in the range of 80 DEG C ~ 150 DEG C in said mixture
Block；The addition of adhesive is the 0.1-35% of mixture weight；
（3）By dry after cake broke and be classified, obtain blank granule；
（4）The blank granule obtaining will be classified through removing glue, high temperature sintering, obtain bulky grain polycrystalline diamond abrasive particle；
（5）By the polycrystalline diamond abrasive particle that obtains after above-mentioned removing glue, sintering measure by mass percentage addition matrix powder and
Adhesive, uniformly mixes, obtains polycrystal mixture；Described matrix powder is ceramic powder, metal-powder or a combination thereof；
（6）Above-mentioned polycrystal mixture is made the effigurate post-chip blank of tool with the method for molding；
（7）The above-mentioned post-chip blank by die forming, after removing glue, high temperature sintering, obtains the polycrystalline diamond abrasive of function admirable
Post-chip.
Above-mentioned polycrystalline diamond post-chip is affixed to grinding, polishing disk according to certain rules, through suitably repairing after disk, you can be used for
The grinding and polishing work of the material workpiece such as iron and steel, glass, pottery, artificial intraocular lensess.
Described step（1）Middle diamond abrasive grains are monocrystalline synthesis material or its broken material, and the particle diameter of diamond particles exists
Between 100 nanometers -50 microns, especially diamond particles between 200 nanometers -10 microns for the particle diameter.
Described step（1）Described in binding agent play in the space of diamond particle bonding and molding effect；Viscous
Connecing agent is metal powder, ceramics or their mixture, and wherein metal powder is one or more of copper, nickel, iron powder mixture,
Ceramics are one of silicon dioxide, aluminium oxide, potassium oxide, sodium oxide, calcium oxide, magnesium oxide, ferrum oxide, titanium oxide or many
Plant mixture and its pre-sintered body.
Described step（2）Middle adhesive is polyvinyl acetate, Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, polypropylene
One or more of acid esters, a- cyanoacrylate, Pioloform, polyvinyl acetal and epoxy resin mixture.
Described step（3）In, the powder after crushing is classified on request, and with specifying the sieved through sieve of mesh number, it is suitable to obtain
The bulky grain abrasive compact of particle diameter distribution, or the little particle of appropriate particle size distribution is obtained with gravity classification method, centrifugal classification
Abrasive compact.
Removing glue link in described step (4) is it is simply that remove the adhesive in blank, removing glue temperature is in 400 ~ 550 DEG C of models
Enclose interior regulation, the time is 30 minutes to 2 hours, and the length of time is by how many decisions expected；The temperature of high temperature sintering is according to bonding
The requirement of agent component and bond strength is adjusted in the range of 600-900 DEG C, and the time, was equally depended on to 2 hours for 30 minutes
In material number, the polycrystalline grits granule that obtains, there is certain cutting force and bond strength.
In described step (5), the percentage by weight of polycrystalline diamond abrasive particle is 30-90%, the weight percent of adhesive
For 5-30%, remaining is matrix to ratio.
In described step (6), the pressure of molding should prevent hypertonia from leading to polycrystal conquassation between 20-500kPa
Not enough with intensity with hypotony green density；Heat treated can be carried out if necessary simultaneously；It is molded the blank shape of the post-chip obtaining
Shape is cylinder, circular, triangular prism, quadrangular or six prisms.
Removing glue temperature in described step (7) is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, high
At 550-850 DEG C, the time is 30 minutes to 2 hours to warm sintering temperature.Furnace cooling after sintering；Can by control post-processing temperature
To obtain the polycrystalline diamond abrasive paster of different bond strengths.
The polycrystalline diamond post-chip of the present invention can be according to specifically used requirement, by certain arrangement, by welding, heat
The modes such as pressure, bonding are fixedly arranged at the instruments such as abrasive disk, polishing disk, bistrique, solid for the grinding of workpiece, cutting, honing, grinding etc.
Knot abrasive machining occasion；Polycrystalline diamond post-chip compared with traditional diamond tool, the very a height of 70-95% of diamond content, because
And the persistence of the sharpness of diamond tool and processing has obtained significantly improving.Polycrystalline diamond abrasive material is adding
It is not whole failure damage during work, but the bonding agent fatigue rupture between diamond, inefficacy, thus leading to multicrystal
Broken, form multicrystal single diamond and come off one by one；This process not only improves the self-sharpening of abrasive particle, and can improve and added
The quality on work surface.
The invention has the beneficial effects as follows：
The preparation method that the present invention provides is simple, high yield rate, preparation cost are low.And the instrument of polycrystalline diamond paster processing
Have the advantages that to process that persistence is good, sharpness is high, the fields such as grinding, cutting, honing, grinding can be widely used in.
Specific embodiment
With reference to embodiment, the present invention is further described.
Embodiment one.
A kind of polycrystalline diamond post-chip, it is prepared from by following methods：
（1）Take particle diameter in 200 nanometers 50 grams and 50 grams binding agents of diamond abrasive grains（5 grams of copper powders add 45 grams of aluminium oxidies）,
Mix homogeneously makes mixture；Binding agent plays the effect of bonding and molding in the space of diamond particle；
（2）Add 10 grams of polyvinyl acetate in said mixture（It is alternatively Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, gather
One or more of acrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and epoxy resin mixture, similarly hereinafter）Gluing
Agent moistening stirs evenly, the caking after being dried in the range of 80 DEG C ~ 150 DEG C；
（3）By dry after cake broke and carry out classification of sieving, obtain particle diameter for 270 ~ 400 mesh blank granule；
（4）The blank granule obtaining will be classified through removing glue（Remove the adhesive in blank）, high temperature sintering, obtain bulky grain polycrystalline
Body diamond abrasive particle；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and the length of time is by expecting
How many decisions；The temperature of high temperature sintering is carried out in the range of 600-900 DEG C according to the requirement of binder component and bond strength
Adjust, the time is 30 minutes to 2 hours, be similarly dependent on material number, the polycrystalline grits granule that obtains, there is certain cutting
Cut power and bond strength；
（5）The polycrystalline diamond abrasive particle obtaining after taking above-mentioned removing glue, sintering 50 grams of matrix powder of 30 grams of additions（By 10 grams of copper powders
Plus 40 grams of aluminium oxidies）And 20 grams of polyvinyl acetate（Be alternatively Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, polyacrylate,
One or more of a- cyanoacrylate, Pioloform, polyvinyl acetal and epoxy resin mixture）Adhesive, uniformly mixes, obtains
To 100 grams of polycrystal mixture；.
（6）Above-mentioned 100 grams of polycrystal mixture are made diameter phi 10 with the method for molding, thickness is the cylinder of 5mm
Post-chip；The pressure of molding should prevent hypertonia from leading to polycrystal conquassation and hypotony green density between 20-500kPa
Not enough with intensity；Heat treated can be carried out if necessary simultaneously；The blank shape being molded the post-chip obtaining can be also circular, Rhizoma Sparganii
Post, quadrangular or six prisms；
（7）The above-mentioned post-chip blank by die forming, after removing glue, high temperature sintering, obtains the polycrystalline diamond abrasive of function admirable
Post-chip；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and high temperature sintering temperature is in 550-850
DEG C, the time is 30 minutes to 2 hours.Furnace cooling after sintering；By controlling post-processing temperature（High temperature sintering temperature）Can obtain
Polycrystalline diamond paster to different bond strengths.
Above-mentioned polycrystalline diamond post-chip is pasted on pedestal, can be used for the grinding of sapphire, carborundum, spinelle
Polishing.In this example, for, during sapphire processing, material removing rate has reached 200-350 μm/min, workpiece after processing
Surface roughness Ra has reached 80-100nm.
Example 2.
A kind of polycrystalline diamond post-chip, it is prepared from by following methods：
（1）By the diamond abrasive grains for 5-10 μm for the particle diameter or 95 grams of its broken material and 5 grams of binding agent（Iron powder）Mix homogeneously
Make mixture；Binding agent plays the effect of bonding and molding in the space of diamond particle；
（2）Add 35 grams of Vinylidene Chloride in said mixture（Also can in for polyvinyl acetate, polyisobutylene, polyvinyl alcohol,
One or more of polyacrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and epoxy resin mixture）Adhesive moistens
Wet stir evenly, the caking after being dried in the range of 80 DEG C ~ 150 DEG C；
（3）By dry after cake broke and be classified, obtain the micropowder blank granule of 270 ~ 400 mesh；
（4）The blank granule obtaining will be classified through removing glue（Remove the adhesive in blank）, high temperature sintering, obtain bulky grain polycrystalline
Body diamond abrasive particle；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and the length of time is by expecting
How many decisions；The temperature of high temperature sintering is carried out in the range of 600-900 DEG C according to the requirement of binder component and bond strength
Adjust, the time is 30 minutes to 2 hours, be similarly dependent on material number, the polycrystalline grits granule that obtains, there is certain cutting
Cut power and bond strength；
（5）By 90 grams of addition 5 matrix powder of the polycrystalline diamond abrasive particle obtaining after above-mentioned removing glue, sintering（Iron powder）And 5 grams of glue
Glutinous agent, uniformly mixes, obtains polycrystal mixture；
（6）Above-mentioned polycrystal mixture is made diameter phi 16 with the method for molding, thickness is the cylindrical paster blank of 2mm；
The pressure of molding should between 20-500kPa, prevent hypertonia lead to polycrystal conquassation and hypotony green density with strong
Degree is not enough；Heat treated can be carried out if necessary simultaneously；Be molded the blank shape of post-chip obtaining also can be suppressed into circular, three
Prism, quadrangular or six prisms；
（7）The above-mentioned post-chip blank by die forming, after removing glue, high temperature sintering, obtains the polycrystalline diamond abrasive of function admirable
Post-chip；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and high temperature sintering temperature is in 550-850
DEG C, the time is 30 minutes to 2 hours.Furnace cooling after sintering；By controlling post-processing temperature（High temperature sintering temperature）Can obtain
Polycrystalline diamond paster to different bond strengths.
The polycrystalline diamond post-chip of gained is pasted the concretion abrasive made on pedestal for grinding to grind as abrasive material
Mill pad, this grinding pad is paster to be arranged on substrate as requested and pastes pressing molding.Processing parameter is set to：Pressure
Power 20KPa, station rotating speed 85rpm, grinding pad rotating speed 80rpm, lapping liquid adds appropriate triethanolamine and OP-10 for deionized water
Emulsifying agent.After grinding 50min, the material removing rate obtaining sapphire wafer is 280nm/min, and surface roughness Ra is average
For 85nm, and there is no obvious cut, can be used as the front road grinding step of sapphire polishing.
Example 3.
A kind of polycrystalline diamond post-chip, it is prepared from by following methods：
（1）60 grams and 40 grams binding agents of diamond abrasive grains that particle diameter is 100 nanometers（By 20 grams of nikel powders and 20 grams of titanium dioxide
Silicon forms）, mix homogeneously makes mixture；Binding agent plays the effect of bonding and molding in the space of diamond particle；
（2）Add 0.1 gram of epoxy resin in said mixture（Also can for polyvinyl acetate, Vinylidene Chloride, polyisobutylene,
Polyvinyl alcohol, polyacrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and one or more of mixture）Adhesive
Moistening stirs evenly, the caking after being dried in the range of 80 DEG C ~ 150 DEG C；
（3）By the cake broke after drying and carry out classification and obtain particle diameter（170/230 mesh）Micropowder.
（4）The blank granule obtaining will be classified through removing glue（Remove the adhesive in blank）, high temperature sintering, obtain bulky grain
Polycrystalline diamond abrasive particle；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, the length of time
By how many decisions expected；The temperature of high temperature sintering is according to the requirement of binder component and bond strength in the range of 600-900 DEG C
Be adjusted, the time is 30 minutes to 2 hours, be similarly dependent on material number, the polycrystalline grits granule that obtains, have certain
Cutting force and bond strength；
（5）By 50 grams of 20 grams of matrix powder of addition of the polycrystalline diamond abrasive particle obtaining after above-mentioned removing glue, sintering（By 10 grams of nikel powders
Form with 10 grams of silicon dioxide）And 30 grams of epoxy resin of adhesive（Also can for polyvinyl acetate, Vinylidene Chloride, polyisobutylene,
Polyvinyl alcohol, polyacrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and one or more of mixture）, uniformly mix
Close, obtain polycrystal mixture；
（6）Above-mentioned polycrystal mixture is made with certain size with the method for molding（The length of side is 4mm's, and thickness is 2mm）
Regular triangular prism post-chip；The pressure of molding should prevent hypertonia from leading to polycrystal conquassation and pressure mistake between 20-500kPa
Low green density is not enough with intensity；Heat treated can be carried out if necessary simultaneously；Being molded the blank shape of post-chip obtaining can be also
Cylinder, circular, quadrangular or six prisms；
（7）The above-mentioned post-chip blank by die forming, after removing glue, high temperature sintering, obtains the polycrystalline diamond abrasive of function admirable
Post-chip；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and high temperature sintering temperature is in 550-850
DEG C, the time is 30 minutes to 2 hours.Furnace cooling after sintering；By controlling post-processing temperature（High temperature sintering temperature）Can obtain
To the polycrystalline diamond post-chip of different bond strengths, in sintering process, adhesive can natural evaporation or decomposition.Through high temperature sintering
The post-chip obtaining afterwards is pasted on pedestal, can be used for the grinding and polishing processing of sapphire, carborundum, spinelle.In this example, use
When the processing of polycrystal carborundum, material removing rate has reached 450-500 μm/min, and after processing, the surface roughness Ra of workpiece reaches
Arrive 80-100nm.
Example 4.
A kind of polycrystalline diamond post-chip, it is prepared from by following methods：
（1）70 grams and 30 grams binding agents of diamond abrasive grains that particle diameter is 50 microns（Iron powder）, mix homogeneously makes mixing
Thing；Binding agent plays the effect of bonding and molding in the space of diamond particle；
（2）Add 20 grams of epoxy resin in said mixture（Can be also polyvinyl acetate, Vinylidene Chloride, polyisobutylene, gather
Vinyl alcohol, polyacrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and one or more of mixture）Adhesive moistens
Wet stir evenly, the caking after being dried in the range of 80 DEG C ~ 150 DEG C；
（3）By the cake broke after drying and carry out classification and obtain particle diameter（170/230 mesh）Micropowder.
（4）The blank granule obtaining will be classified through removing glue（Remove the adhesive in blank）, high temperature sintering, obtain bulky grain
Polycrystalline diamond abrasive particle；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, the length of time
By how many decisions expected；The temperature of high temperature sintering is according to the requirement of binder component and bond strength in the range of 600-900 DEG C
Be adjusted, the time is 30 minutes to 2 hours, be similarly dependent on material number, the polycrystalline grits granule that obtains, have certain
Cutting force and bond strength；
（5）By 80 grams of 10 grams of matrix powder of addition of the polycrystalline diamond abrasive particle obtaining after above-mentioned removing glue, sintering（Iron powder）And glue
Glutinous agent epoxy resin（Can be also polyvinyl acetate, Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, polyacrylate, a- cyano group
Acrylate, Pioloform, polyvinyl acetal and one or more of mixture）10 grams, uniformly mix, obtain polycrystal mixture；
（6）Above-mentioned polycrystal mixture is made certain size with the method for molding（The length of side is 4mm's, and thickness is 2mm）Just
Quadrangular post-chip；The pressure of molding should prevent hypertonia from leading to polycrystal conquassation and hypotony life between 20-500kPa
Base density is not enough with intensity；Heat treated can be carried out if necessary simultaneously；The blank shape being molded the post-chip obtaining can be also cylinder
Body, circular, triangular prism or six prisms；
（7）The above-mentioned post-chip blank by die forming, after removing glue, high temperature sintering, obtains the polycrystalline diamond abrasive of function admirable
Post-chip；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and high temperature sintering temperature is in 550-850
DEG C, the time is 30 minutes to 2 hours.Furnace cooling after sintering；By controlling post-processing temperature（High temperature sintering temperature）Can obtain
To the polycrystalline diamond post-chip of different bond strengths, in sintering process, adhesive can natural evaporation or decomposition.
The polycrystalline diamond post-chip of above-mentioned sintering is pasted the consolidation mill made on pedestal for grinding as abrasive material
Abrasive lapping pad is used for processing polycrystal carborundum, and this grinding pad is to be arranged on substrate simultaneously polycrystalline diamond paster as requested
Paste pressing molding.Processing parameter is set to：Pressure 30KPa, station rotating speed 85rpm, grinding pad rotating speed 80rpm, grind
Liquid adds appropriate triethanolamine and OP-10 emulsifying agent for deionized water.After grinding 50min, the material obtaining polycrystal carborundum goes
Except rate is for 350nm/min, surface roughness Ra average out to 100nm, and there is no obvious cut.
Example 5.
Embodiment one.
A kind of polycrystalline diamond post-chip, it is prepared from by following methods：
（1）60 grams and 40 grams binding agents of diamond abrasive grains that particle diameter is 10 microns（+ 30 grams of nikel powders of 10 grams of iron powders）, mixing
Uniformly make mixture；Binding agent plays the effect of bonding and molding in the space of diamond particle；
（2）Add 10 grams of polyvinyl alcohol in said mixture（Can be also polyvinyl acetate, Vinylidene Chloride, polyisobutylene, ring
Oxygen tree fat, polyacrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and one or more of mixture）Adhesive moistens
Wet stir evenly, the caking after being dried in the range of 80 DEG C ~ 150 DEG C；
（3）By dry after cake broke and carry out the micropowder that classification obtains particle diameter 270 ~ 325 mesh.
（4）The blank granule obtaining will be classified through removing glue（Remove the adhesive in blank）, high temperature sintering, obtain bulky grain
Polycrystalline diamond abrasive particle；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, the length of time
By how many decisions expected；The temperature of high temperature sintering is according to the requirement of binder component and bond strength in the range of 600-900 DEG C
Be adjusted, the time is 30 minutes to 2 hours, be similarly dependent on material number, the polycrystalline grits granule that obtains, have certain
Cutting force and bond strength；
（5）By 60 grams of 20 grams of matrix powder of addition of the polycrystalline diamond abrasive particle obtaining after above-mentioned removing glue, sintering（10 iron powders+10
Gram nikel powder）And adhesive epoxy resin（Can be also polyvinyl acetate, Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, polypropylene
Acid esters, a- cyanoacrylate, Pioloform, polyvinyl acetal and one or more of mixture）20 grams, uniformly mix, obtain polycrystalline
Body mixture；
（6）Above-mentioned polycrystal mixture is made diameter phi 25 with the method for molding, thickness is the cylindrical post-chip of 4mm；Molding
Pressure should prevent hypertonia from leading to polycrystal conquassation and hypotony green density with intensity not between 20-500kPa
Foot；Heat treated can be carried out if necessary simultaneously；The blank shape being molded the post-chip obtaining can be also circular, triangular prism, four ribs
Post or six prisms；
（7）The above-mentioned post-chip blank by die forming, after removing glue, high temperature sintering, obtains the polycrystalline diamond abrasive of function admirable
Post-chip；Removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours, and high temperature sintering temperature is in 550-850
DEG C, the time is 30 minutes to 2 hours.Furnace cooling after sintering；By controlling post-processing temperature（High temperature sintering temperature）Can obtain
To the polycrystalline diamond post-chip of different bond strengths, in sintering process, adhesive can natural evaporation or decomposition.
The polycrystalline diamond post-chip of above-mentioned sintering is pasted the consolidation mill made on pedestal for grinding as abrasive material
Abrasive lapping pad grinds magnesium aluminate spinel, and this grinding pad is polycrystalline diamond post-chip to be arranged on substrate as requested and pastes
Pressing molding.Processing parameter is set to：Pressure 20KPa, station rotating speed 85rpm, grinding pad rotating speed 80rpm, lapping liquid is
Deionized water adds appropriate triethanolamine and OP-10 emulsifying agent.After grinding 30min, obtain the material removing rate of sapphire wafer
For 380nm/min about, the average 95nm of surface roughness Ra, and there is no obvious cut.
The polycrystalline diamond post-chip of the present invention can according to specifically used requirement, by certain arrangement, by welding, hot pressing,
The modes such as bonding are fixedly arranged at the instruments such as abrasive disk, polishing disk, bistrique, for the consolidation such as the grinding of workpiece, cutting, honing, grinding
Abrasive machining occasion；Polycrystalline diamond post-chip compared with traditional diamond tool, the very a height of 70-95% of diamond content, thus
The persistence of the sharpness of diamond tool and processing has obtained significantly improving.Polycrystalline diamond abrasive material is in processing
During be not whole failure damage, but the bonding agent fatigue rupture between diamond, inefficacy, thus lead to multicrystal broken
Broken, form multicrystal single diamond and come off one by one；This process not only improves the self-sharpening of abrasive particle, and can improve processed
The quality on surface.
Part that the present invention does not relate to is same as the prior art or can be realized using prior art.
Claims (10)
1. a kind of preparation method of polycrystalline diamond post-chip is it is characterised in that it comprises the following steps：
（1）Diamond abrasive grains and binding agent are measured by mass percentage, mix homogeneously makes mixture；Wherein diamond
The mass percent of abrasive grain is 50-95%, and remaining is binding agent；
（2）Add adhesive moistening to stir evenly, the knot after being dried in the range of 80 DEG C ~ 150 DEG C in said mixture
Block；The addition of adhesive is the 0.1-35% of mixture weight；
（3）By dry after cake broke and be classified, obtain blank granule；
（4）The blank granule obtaining will be classified through removing glue, high temperature sintering, obtain bulky grain polycrystalline diamond abrasive particle；
（5）By the polycrystalline diamond abrasive particle that obtains after above-mentioned removing glue, sintering measure by mass percentage addition matrix powder and
Adhesive, uniformly mixes, obtains polycrystal mixture；Described matrix powder is ceramic powder, metal-powder or a combination thereof；
（6）Above-mentioned polycrystal mixture is made the effigurate post-chip blank of tool with the method for molding；
（7）By the post-chip blank of above-mentioned die forming after removing glue, high temperature sintering, obtain the polycrystalline diamond abrasive of function admirable
Post-chip.
2. method according to claim 1 it is characterised in that：Described step（1）Middle diamond abrasive grains are closed for monocrystalline
Become material or its broken material, between 100 nanometers -50 microns, especially particle diameter is micro- at 200 nanometer -10 for the particle diameter of diamond particles
Diamond particles between rice.
3. method according to claim 1 it is characterised in that：Described step（1）Described in binding agent micro- in diamond
The effect of bonding and molding is played in the space of grain；Bonding agent is metal powder, ceramics or their mixture, wherein metal powder
For one or more of copper, nickel, iron powder mixture, ceramics are silicon dioxide, aluminium oxide, potassium oxide, sodium oxide, oxidation
One or more of calcium, magnesium oxide, ferrum oxide, titanium oxide mixture and its pre-sintered body.
4. method according to claim 1 it is characterised in that：Described step（2）Middle adhesive be polyvinyl acetate,
In Vinylidene Chloride, polyisobutylene, polyvinyl alcohol, polyacrylate, a- cyanoacrylate, Pioloform, polyvinyl acetal and epoxy resin
One or more mixture.
5. method according to claim 1 it is characterised in that：Described step（3）In, the powder after crushing divides on request
Level, with specify mesh number sieved through sieve, obtain appropriate particle size distribution bulky grain abrasive compact, or with gravity classification method, from
Heart staging obtains the little particle abrasive compact of appropriate particle size distribution.
6. the method according to claims 1 it is characterised in that：Removing glue link in described step (4) is it is simply that remove base
Adhesive in material, removing glue temperature is adjusted in the range of 400 ~ 550 DEG C, and the time is 30 minutes to 2 hours；The temperature of high temperature sintering
For 600-900 DEG C, the time is 30 minutes to 2 hours.
7. the method according to claims 1 it is characterised in that：Polycrystalline diamond abrasive particle in described step (5)
Percentage by weight is 30-90%, and the percentage by weight of adhesive is 5-30%, and remaining is matrix.
8. the method according to claims 1 it is characterised in that：In described step (6), the pressure of molding should be in 20-
Between 500kPa；The blank shape being molded the post-chip obtaining is cylinder, circular, triangular prism, quadrangular or six prisms.
9. the method according to claims 1 it is characterised in that：Removing glue temperature in described step (7) is 400 ~ 550
Adjust in the range of DEG C, the time is 30 minutes to 2 hours, at 550-850 DEG C, the time is 30 minutes to 2 hours to high temperature sintering temperature.
10. a kind of claim 1 method prepares the polycrystalline diamond post-chip of gained, according to specifically used requirement, by certain
Arrangement, is fixedly arranged at abrasive disk, polishing disk, on bistrique instrument, for the grinding of workpiece, honing, is ground by welding, bonding way
Mill, polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610857939.9A CN106378717A (en) | 2016-09-28 | 2016-09-28 | Production method and application of multicrystal diamond tablet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610857939.9A CN106378717A (en) | 2016-09-28 | 2016-09-28 | Production method and application of multicrystal diamond tablet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106378717A true CN106378717A (en) | 2017-02-08 |
Family
ID=57936917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610857939.9A Pending CN106378717A (en) | 2016-09-28 | 2016-09-28 | Production method and application of multicrystal diamond tablet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106378717A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107652899A (en) * | 2017-10-18 | 2018-02-02 | 绍兴自远磨具有限公司 | A kind of ceramic sapphire polishing Liquid diamond and its manufacture method |
| CN109048690A (en) * | 2018-07-13 | 2018-12-21 | 江苏金港钻石工具有限公司 | Diamond-impregnated wheel and its manufacturing process |
| CN110184491A (en) * | 2019-06-03 | 2019-08-30 | 河南四方达超硬材料股份有限公司 | A kind of polycrystalline diamond wire drawing die base of even tissue and preparation method thereof |
| CN110238764A (en) * | 2019-07-19 | 2019-09-17 | 陕西科技大学 | A kind of Vitrified Bond CBN Tools and its preparation method and application |
| CN111100599A (en) * | 2019-12-23 | 2020-05-05 | 南京航空航天大学 | Superhard aggregate abrasive with high micro-crushing characteristic and preparation method thereof |
| CN112692956A (en) * | 2020-12-28 | 2021-04-23 | 华侨大学 | Slurry direct-writing forming method of honeycomb-shaped diamond tool |
| CN113146487A (en) * | 2021-01-21 | 2021-07-23 | 郑州伯利森新材料科技有限公司 | Grinding wheel for precision grinding of monocrystalline silicon wafers and preparation method thereof |
| CN114058330A (en) * | 2021-11-26 | 2022-02-18 | 河南省亚龙超硬材料有限公司 | Preparation method of abrasion-resistant diamond micro powder |
| CN114806503A (en) * | 2022-05-27 | 2022-07-29 | 河南科技学院 | Catalytic abrasive grain cluster and preparation method thereof |
| CN115710486A (en) * | 2022-10-21 | 2023-02-24 | 上海工程技术大学 | Self-discharge abrasive for electrocatalysis-assisted chemical mechanical polishing and preparation method thereof |
| CN115710485A (en) * | 2022-10-21 | 2023-02-24 | 上海工程技术大学 | Self-luminous abrasive material for processing photocatalytic auxiliary abrasive particles |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02180561A (en) * | 1988-10-05 | 1990-07-13 | Mitsui Mining & Smelting Co Ltd | Composite grindstone and manufacture thereof |
| EP0648576A1 (en) * | 1993-10-15 | 1995-04-19 | Diametal Ag | Abrasive lining for abrasive tool and its manufacturing process |
| CN102729157A (en) * | 2012-06-19 | 2012-10-17 | 南京航空航天大学 | Cubic boron nitride grinding wheel with abrasive particles distributed sequentially in three dimensions and manufacturing method thereof |
| CN103624695A (en) * | 2013-12-13 | 2014-03-12 | 珠海市巨海科技有限公司 | Super-hard ceramic bond abrasive tool and manufacturing method thereof |
| CN105856078A (en) * | 2016-04-19 | 2016-08-17 | 南京航空航天大学 | Preparation method and use of self-sharpening sintered abrasive material |
-
2016
- 2016-09-28 CN CN201610857939.9A patent/CN106378717A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02180561A (en) * | 1988-10-05 | 1990-07-13 | Mitsui Mining & Smelting Co Ltd | Composite grindstone and manufacture thereof |
| EP0648576A1 (en) * | 1993-10-15 | 1995-04-19 | Diametal Ag | Abrasive lining for abrasive tool and its manufacturing process |
| CN102729157A (en) * | 2012-06-19 | 2012-10-17 | 南京航空航天大学 | Cubic boron nitride grinding wheel with abrasive particles distributed sequentially in three dimensions and manufacturing method thereof |
| CN103624695A (en) * | 2013-12-13 | 2014-03-12 | 珠海市巨海科技有限公司 | Super-hard ceramic bond abrasive tool and manufacturing method thereof |
| CN105856078A (en) * | 2016-04-19 | 2016-08-17 | 南京航空航天大学 | Preparation method and use of self-sharpening sintered abrasive material |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107652899B (en) * | 2017-10-18 | 2022-09-02 | 绍兴自远磨具有限公司 | Diamond liquid for polishing ceramic sapphire and manufacturing method thereof |
| CN107652899A (en) * | 2017-10-18 | 2018-02-02 | 绍兴自远磨具有限公司 | A kind of ceramic sapphire polishing Liquid diamond and its manufacture method |
| CN109048690A (en) * | 2018-07-13 | 2018-12-21 | 江苏金港钻石工具有限公司 | Diamond-impregnated wheel and its manufacturing process |
| CN110184491A (en) * | 2019-06-03 | 2019-08-30 | 河南四方达超硬材料股份有限公司 | A kind of polycrystalline diamond wire drawing die base of even tissue and preparation method thereof |
| CN110238764B (en) * | 2019-07-19 | 2022-01-28 | 陕西科技大学 | Ceramic bond CBN grinding tool and preparation method and application thereof |
| CN110238764A (en) * | 2019-07-19 | 2019-09-17 | 陕西科技大学 | A kind of Vitrified Bond CBN Tools and its preparation method and application |
| CN111100599A (en) * | 2019-12-23 | 2020-05-05 | 南京航空航天大学 | Superhard aggregate abrasive with high micro-crushing characteristic and preparation method thereof |
| CN112692956B (en) * | 2020-12-28 | 2022-07-01 | 华侨大学 | Slurry direct-writing forming method of honeycomb-shaped diamond tool |
| CN112692956A (en) * | 2020-12-28 | 2021-04-23 | 华侨大学 | Slurry direct-writing forming method of honeycomb-shaped diamond tool |
| CN113146487A (en) * | 2021-01-21 | 2021-07-23 | 郑州伯利森新材料科技有限公司 | Grinding wheel for precision grinding of monocrystalline silicon wafers and preparation method thereof |
| CN114058330A (en) * | 2021-11-26 | 2022-02-18 | 河南省亚龙超硬材料有限公司 | Preparation method of abrasion-resistant diamond micro powder |
| CN114806503A (en) * | 2022-05-27 | 2022-07-29 | 河南科技学院 | Catalytic abrasive grain cluster and preparation method thereof |
| CN115710486A (en) * | 2022-10-21 | 2023-02-24 | 上海工程技术大学 | Self-discharge abrasive for electrocatalysis-assisted chemical mechanical polishing and preparation method thereof |
| CN115710485A (en) * | 2022-10-21 | 2023-02-24 | 上海工程技术大学 | Self-luminous abrasive material for processing photocatalytic auxiliary abrasive particles |
| CN115710485B (en) * | 2022-10-21 | 2024-05-17 | 上海工程技术大学 | Self-luminous abrasive for photocatalysis-assisted abrasive grain processing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106378717A (en) | Production method and application of multicrystal diamond tablet | |
| CN105856078B (en) | A kind of self-sharpening sintered abrasive grain preparation method and purposes | |
| DK176825B1 (en) | Improved coated abrasives | |
| CN107791163A (en) | A kind of preparation method of the durable porous skive of high intensity | |
| CN105563363B (en) | A kind of method that centrifugal drying granulating technique prepares vitrified bond accumulation abrasive material | |
| CN100404203C (en) | Preparation method of diamond grinding polishing sheet | |
| CN104480337B (en) | A kind of preparation method of hard alloy cutting tool material | |
| CN105108666B (en) | One kind processing PCD saw blades ceramic skive and preparation method thereof | |
| CN108247553B (en) | Preparation method of wear-resistant artificial oilstone | |
| CN1080622C (en) | Vitreous grinding tool containing metal coated abrasive | |
| CN106392908A (en) | Diamond grinding wheel with ceramic binders and production method thereof | |
| CN105950114B (en) | A kind of outer membrane mixing diamond spherical abrasive material and preparation method thereof | |
| CN104802099B (en) | A kind of abrading block, its preparation method and application with big filings-containing cavity | |
| CN109794862A (en) | Stainless steel pulp cavity reamer combined binder CBN grinding wheel and its application | |
| CN110202131A (en) | A kind of preparation method of diamond composition | |
| CN105014553B (en) | A kind of ceramic microcrystalline emery wheel and its manufacture method with high-strength grinding performance | |
| CN109719294A (en) | Faraday rotation piece 40 microns of super thin metal binder diamond saw blades and its application | |
| NO822673L (en) | AGGREGATED GRINDING PARTICLE CONTAINING DIAMOND PARTICLES IN A METAL BINDING MASS. | |
| CN106566968A (en) | Diamond scribing knife for light filter glass cutting, and preparation method thereof | |
| CN106541339B (en) | A kind of preparation process of cubic boron nitride accumulation abrasive material | |
| CN113462358A (en) | Production process of super-hard wear-resistant polymerized abrasive | |
| CN110549257B (en) | Processing technology of ceramic bond diamond grinding wheel | |
| CN108453636A (en) | A kind of composite wheel and preparation method thereof containing super hard abrasive | |
| CN107900921A (en) | A kind of porous cubic boron nitride abrasive wheel working lining and its manufacture method based on abrasive particle cluster and graphene | |
| CN109366347A (en) | A kind of grinding pad and preparation method thereof suitable for hard brittle material precise finiss |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170208 |
|
| RJ01 | Rejection of invention patent application after publication |