CN106256923B - 成膜装置、成膜方法以及基板载置台 - Google Patents
成膜装置、成膜方法以及基板载置台 Download PDFInfo
- Publication number
- CN106256923B CN106256923B CN201610425922.6A CN201610425922A CN106256923B CN 106256923 B CN106256923 B CN 106256923B CN 201610425922 A CN201610425922 A CN 201610425922A CN 106256923 B CN106256923 B CN 106256923B
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 87
- 230000002093 peripheral effect Effects 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 42
- 230000033228 biological regulation Effects 0.000 claims abstract description 16
- 238000009413 insulation Methods 0.000 claims abstract description 12
- 238000007740 vapor deposition Methods 0.000 claims description 20
- 239000011159 matrix material Substances 0.000 claims description 18
- 229920002396 Polyurea Polymers 0.000 claims description 13
- 238000006116 polymerization reaction Methods 0.000 claims description 13
- 230000002401 inhibitory effect Effects 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 4
- 230000005764 inhibitory process Effects 0.000 claims description 2
- 208000032825 Ring chromosome 2 syndrome Diseases 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 10
- 230000001105 regulatory effect Effects 0.000 description 61
- 239000007789 gas Substances 0.000 description 45
- 208000033641 Ring chromosome 5 syndrome Diseases 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 5
- 239000011368 organic material Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 3
- 125000005442 diisocyanate group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000028016 temperature homeostasis Effects 0.000 description 2
- 239000006091 Macor Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-120811 | 2015-06-16 | ||
| JP2015120811A JP6478828B2 (ja) | 2015-06-16 | 2015-06-16 | 成膜装置、成膜方法および基板載置台 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106256923A CN106256923A (zh) | 2016-12-28 |
| CN106256923B true CN106256923B (zh) | 2018-09-28 |
Family
ID=57714047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610425922.6A Active CN106256923B (zh) | 2015-06-16 | 2016-06-16 | 成膜装置、成膜方法以及基板载置台 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6478828B2 (ja) |
| KR (1) | KR101848145B1 (ja) |
| CN (1) | CN106256923B (ja) |
| TW (1) | TWI690994B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7008497B2 (ja) * | 2017-12-22 | 2022-01-25 | 東京エレクトロン株式会社 | 基板処理装置および温度制御方法 |
| JP2019220497A (ja) * | 2018-06-15 | 2019-12-26 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| JP7008602B2 (ja) * | 2018-09-27 | 2022-01-25 | 東京エレクトロン株式会社 | 成膜装置および温度制御方法 |
| JP7093850B2 (ja) * | 2018-12-03 | 2022-06-30 | 株式会社アルバック | 成膜装置及び成膜方法 |
| JP7236953B2 (ja) * | 2019-08-05 | 2023-03-10 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
| KR20230004790A (ko) | 2020-04-29 | 2023-01-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 균일성 개선을 위한 히터 커버 플레이트 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266924A (zh) * | 2007-03-16 | 2008-09-17 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法和记录介质 |
| JP3155802U (ja) * | 2009-09-17 | 2009-12-03 | 日本碍子株式会社 | ウエハー載置装置 |
| CN102315151A (zh) * | 2010-06-30 | 2012-01-11 | 东京毅力科创株式会社 | 基板承载台、基板处理装置及基板处理系统 |
| TW201413864A (zh) * | 2012-06-13 | 2014-04-01 | Tokyo Electron Ltd | 基板載置台及基板處理裝置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2910277B2 (ja) | 1991-03-13 | 1999-06-23 | 松下電器産業株式会社 | コンバータートランスの検査装置 |
| JPH07273053A (ja) * | 1994-03-31 | 1995-10-20 | Tokyo Electron Ltd | 処理装置及びアルミ系部材のコーティング方法 |
| JP2001140078A (ja) * | 1999-11-12 | 2001-05-22 | Anelva Corp | 化学蒸着装置 |
| US6795292B2 (en) * | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
| KR100443122B1 (ko) * | 2001-10-19 | 2004-08-04 | 삼성전자주식회사 | 반도체 소자 제조장치용 히터 어셈블리 |
| JP5482282B2 (ja) * | 2009-03-03 | 2014-05-07 | 東京エレクトロン株式会社 | 載置台構造及び成膜装置 |
| JP2014120658A (ja) * | 2012-12-18 | 2014-06-30 | Sharp Corp | 化合物半導体の成膜装置 |
-
2015
- 2015-06-16 JP JP2015120811A patent/JP6478828B2/ja active Active
-
2016
- 2016-06-14 TW TW105118501A patent/TWI690994B/zh active
- 2016-06-15 KR KR1020160074532A patent/KR101848145B1/ko active IP Right Grant
- 2016-06-16 CN CN201610425922.6A patent/CN106256923B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266924A (zh) * | 2007-03-16 | 2008-09-17 | 东京毅力科创株式会社 | 基板处理装置、基板处理方法和记录介质 |
| JP3155802U (ja) * | 2009-09-17 | 2009-12-03 | 日本碍子株式会社 | ウエハー載置装置 |
| CN102315151A (zh) * | 2010-06-30 | 2012-01-11 | 东京毅力科创株式会社 | 基板承载台、基板处理装置及基板处理系统 |
| TW201413864A (zh) * | 2012-06-13 | 2014-04-01 | Tokyo Electron Ltd | 基板載置台及基板處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201703137A (zh) | 2017-01-16 |
| TWI690994B (zh) | 2020-04-11 |
| CN106256923A (zh) | 2016-12-28 |
| JP2017002385A (ja) | 2017-01-05 |
| JP6478828B2 (ja) | 2019-03-06 |
| KR101848145B1 (ko) | 2018-04-11 |
| KR20160148471A (ko) | 2016-12-26 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| GR01 | Patent grant | ||
| GR01 | Patent grant |