CN106252498A - 一种led背光源散热基板材料的制备方法 - Google Patents
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Abstract
本发明涉及一种LED背光源散热基板材料的制备方法,属于散热基板材料制备技术领域。本发明主要是用氮化铝陶瓷粉末、铝粉、硅藻土为主要原料压制成坯料,再对其进行煅烧和退火,得到氮化铝陶瓷复合基板,接着分别对其进行碱洗、酸泡和敏化处理,得到敏化后的氮化铝陶瓷复合基板,再将环氧树脂制备得到的导热聚合物涂覆于敏化后的氮化铝陶瓷复合基板,经固化即可得到LED背光源散热基板材料,本发明制备的LED背光源散热基板材料导热系数高,达到62W/m·K以上,具有很好的散热性能,绝缘性能好,表面电阻值大于15MΩ。
Description
技术领域
本发明涉及一种LED背光源散热基板材料的制备方法,属于散热基板材料制备技术领域。
背景技术
LCD为非发光性的显示装置,须要借助背光源才能达到显示的功能。背光源性能的好坏除了会直接影响LCD显像质量外,背光源的成本占LCD模块的3-5%,所消耗的电力更占模块的75%,可说是LCD模块中相当重要的零组件。高精细、大尺寸的LCD,必须有高性能的背光技术与之配合,因此当LCD产业努力开拓新应用领域的同时,背光技术的高性能化(如高亮度化、低成本化、低耗电化、轻薄化等)亦扮演着幕后功臣的角色。
对于功率型LED,在系统散热方面,选择合适的基板,对其散热性和可靠性具有重要影响,功率型LED散热基板材料要求具有高电绝缘性、高稳定性、高导热性及芯片匹配的热膨胀系数、平整性和较高的强度。目前常用的基板材料有硅、金属、陶瓷等,但硅、陶瓷材料散热性能良好,绝缘不导电,但导热率又太低,无法满足大功率LED的散热要求,金属材料的热膨胀系数与LED晶粒不匹配,在使用过程中将产生热应力和翘曲,难以满足高密度封装的要求,且散热性能不如陶瓷,而且铝及铝合金是电的良导体,作为LED散热器有一定的安全隐患,同时无论纯陶瓷材料还是铝合金材料,在散热器制备过程中能耗均较高。
发明内容
本发明所要解决的技术问题:针对现有的LED背光源散热基板材料中以陶瓷为原料制成的,其导热率低,无法满足大功率LED的散热要求,而以金属为原料制成的,其散热性不佳,且存在安全隐患的问题,本发明主要是用氮化铝陶瓷粉末、铝粉、硅藻土为主要原料压制成坯料,再对其进行煅烧和退火,得到氮化铝陶瓷复合基板,接着分别对其进行碱洗、酸泡和敏化处理,得到敏化后的氮化铝陶瓷复合基板,再将环氧树脂制备得到的导热聚合物涂覆于敏化后的氮化铝陶瓷复合基板,经固化即可得到LED背光源散热基板材料,本发明制备的LED背光源散热基板材料导热率高,散热性能好,可广泛应用于种LED背光源中。
为解决上述技术问题,本发明采用的技术方案是:
(1)按重量份数计,分别选取70~80份氮化铝陶瓷粉末、15~25份金属铝粉、5~7份硅藻土,搅拌混合20~30min后加入到模具中,在60~80MPa条件下压制成型得坯料;
(2)将上述坯料放入马弗炉中,在氩气保护下以5~7℃/min速率升温至200~300℃,保温1~2h后再以12~15℃/min速率升温至850~950℃,保温烧结1.5~2.5h,烧结后先在150~250℃退火30~40min,再在20~30℃退火20~30min,退火后得氮化铝陶瓷复合基板;
(3)将上述制备得到的氮化铝陶瓷复合基板分别用丙酮、去离子水超声清洗10~15min,清洗后先浸泡在质量分数5%氢氧化钠溶液中,浸泡1~2h后用去离子水冲洗表面3~5次,冲洗后再放入质量分数5%稀硝酸溶液浸泡1~2h,浸泡后分别用无水乙醇、去离子水清洗2~4次,清洗后放入敏化液中敏化5~7min后,得敏化后的氮化铝陶瓷复合基板,备用;
(4)按重量份数计,分别称取60~70份环氧树脂、40~50份二氨基二苯砜、10~15份邻苯二甲酸二辛酯、3~5份180~200目硅胶粉、3~5份180~200目石英粉,先将环氧树脂、二氨基二苯砜和邻苯二甲酸二辛酯加入到烧瓶中,并将烧瓶放入油浴锅中,升温至115~120℃搅拌至全部溶解,向溶解后的混合物中加入硅胶粉和石英粉,在600~800r/min转速高速混合15~20min;
(5)将上述混合物均匀涂覆在步骤(3)备用的敏化后的氮化铝陶瓷复合基板,涂覆厚度为1.0~1.5mm,涂覆后在160~180℃温度下固化2~3h,固化成型后即可得到LED背光源散热基板材料。
所述步骤(3)中的敏化液的制备步骤为:
(1)称取80~100g氯化亚锡加入到200~300mL质量分数25%盐酸溶液中,搅拌混合10~15min后加入20~25g锡酸钠,继续搅拌混合50~60min后得溶液1;
(2)称取3~5g氯化钯加入到300~500mL质量分数20%盐酸溶液中,搅拌混合后加入4~6g ,搅拌混合20~30min后得溶液2,并将上述溶液1按滴加速度5~8mL/min滴加到溶液2中,边滴加边搅拌,滴加完成后放入水浴中,在50~55℃搅拌混合1~2h,将得到混合液加入2.0~2.5L蒸馏水,即可得敏化液。
本发明制备的LED背光源散热基板材料拉伸强度达到60.2MPa以上,导热系数达到62W/m·K以上,表面电阻值大于15MΩ,热扩散系数达到25.5mm2/s以上。
本发明与其他方法相比,有益技术效果是:
(1)本发明制备的LED背光源散热基板材料导热系数高,达到62W/m·K以上,具有很好的散热性能;
(2)本发明制备的LED背光源散热基板材料绝缘性能好,表面电阻值大于15MΩ;
(3)本发明制备的LED背光源散热基板材料制备工艺简单,所需原料成本低。
具体实施方式
首先按重量份数计,分别选取70~80份氮化铝陶瓷粉末、15~25份金属铝粉、5~7份硅藻土,搅拌混合20~30min后加入到模具中,在60~80MPa条件下压制成型得坯料;将上述坯料放入马弗炉中,在氩气保护下以5~7℃/min速率升温至200~300℃,保温1~2h后再以12~15℃/min速率升温至850~950℃,保温烧结1.5~2.5h,烧结后先在150~250℃退火30~40min,再在20~30℃退火20~30min,退火后得氮化铝陶瓷复合基板;再将上述制备得到的氮化铝陶瓷复合基板分别用丙酮、去离子水超声清洗10~15min,清洗后先浸泡在质量分数5%氢氧化钠溶液中,浸泡1~2h后用去离子水冲洗表面3~5次,冲洗后再放入质量分数5%稀硝酸溶液浸泡1~2h,浸泡后分别用无水乙醇、去离子水清洗2~4次,清洗后放入敏化液中敏化5~7min后,得敏化后的氮化铝陶瓷复合基板,备用;接着按重量份数计,分别称取60~70份环氧树脂、40~50份二氨基二苯砜、10~15份邻苯二甲酸二辛酯、3~5份180~200目硅胶粉、3~5份180~200目石英粉,先将环氧树脂、二氨基二苯砜和邻苯二甲酸二辛酯加入到烧瓶中,并将烧瓶放入油浴锅中,升温至115~120℃搅拌至全部溶解,向溶解后的混合物中加入硅胶粉和石英粉,在600~800r/min转速高速混合15~20min;最后将上述混合物均匀涂覆在备用的敏化后的氮化铝陶瓷复合基板,涂覆厚度为1.0~1.5mm,涂覆后在160~180℃温度下固化2~3h,固化成型后即可得到LED背光源散热基板材料。
其中敏化液的制备步骤为:称取80~100g氯化亚锡加入到200~300mL质量分数25%盐酸溶液中,搅拌混合10~15min后加入20~25g锡酸钠,继续搅拌混合50~60min后得溶液1;再称取3~5g氯化钯加入到300~500mL质量分数20%盐酸溶液中,搅拌混合后加入4~6g ,搅拌混合20~30min后得溶液2,并将上述溶液1按滴加速度5~8mL/min滴加到溶液2中,边滴加边搅拌,滴加完成后放入水浴中,在50~55℃搅拌混合1~2h,将得到混合液加入2.0~2.5L蒸馏水,即可得敏化液。
实例1
首先按重量份数计,分别选取70份氮化铝陶瓷粉末、15份金属铝粉、5份硅藻土,搅拌混合20min后加入到模具中,在60MPa条件下压制成型得坯料;将上述坯料放入马弗炉中,在氩气保护下以5℃/min速率升温至200℃,保温1h后再以12℃/min速率升温至850℃,保温烧结1.5h,烧结后先在150℃退火30min,再在20℃退火20min,退火后得氮化铝陶瓷复合基板;再将上述制备得到的氮化铝陶瓷复合基板分别用丙酮、去离子水超声清洗10min,清洗后先浸泡在质量分数5%氢氧化钠溶液中,浸泡1h后用去离子水冲洗表面3次,冲洗后再放入质量分数5%稀硝酸溶液浸泡1h,浸泡后分别用无水乙醇、去离子水清洗2次,清洗后放入敏化液中敏化5min后,得敏化后的氮化铝陶瓷复合基板,备用;接着按重量份数计,分别称取60份环氧树脂、40份二氨基二苯砜、10份邻苯二甲酸二辛酯、3份180目硅胶粉、3份180目石英粉,先将环氧树脂、二氨基二苯砜和邻苯二甲酸二辛酯加入到烧瓶中,并将烧瓶放入油浴锅中,升温至115℃搅拌至全部溶解,向溶解后的混合物中加入硅胶粉和石英粉,在600r/min转速高速混合15min;最后将上述混合物均匀涂覆在备用的敏化后的氮化铝陶瓷复合基板,涂覆厚度为1.0mm,涂覆后在160℃温度下固化2h,固化成型后即可得到LED背光源散热基板材料。
其中敏化液的制备步骤为:称取80g氯化亚锡加入到200mL质量分数25%盐酸溶液中,搅拌混合10min后加入20g锡酸钠,继续搅拌混合50min后得溶液1;再称取3g氯化钯加入到300mL质量分数20%盐酸溶液中,搅拌混合后加入4g,搅拌混合20min后得溶液2,并将上述溶液1按滴加速度5mL/min滴加到溶液2中,边滴加边搅拌,滴加完成后放入水浴中,在50℃搅拌混合1h,将得到混合液加入2.0L蒸馏水,即可得敏化液。
经检测,本发明制备的LED背光源散热基板材料拉伸强度达到60.5MPa,导热系数达到63W/m·K,表面电阻值为16MΩ,热扩散系数达到26.5mm2/s。
实例2
首先按重量份数计,分别选取80份氮化铝陶瓷粉末、25份金属铝粉、7份硅藻土,搅拌混合30min后加入到模具中,在80MPa条件下压制成型得坯料;将上述坯料放入马弗炉中,在氩气保护下以7℃/min速率升温至300℃,保温2h后再以15℃/min速率升温至950℃,保温烧结2.5h,烧结后先在250℃退火40min,再在30℃退火30min,退火后得氮化铝陶瓷复合基板;再将上述制备得到的氮化铝陶瓷复合基板分别用丙酮、去离子水超声清洗15min,清洗后先浸泡在质量分数5%氢氧化钠溶液中,浸泡2h后用去离子水冲洗表面5次,冲洗后再放入质量分数5%稀硝酸溶液浸泡2h,浸泡后分别用无水乙醇、去离子水清洗4次,清洗后放入敏化液中敏化7min后,得敏化后的氮化铝陶瓷复合基板,备用;接着按重量份数计,分别称取70份环氧树脂、50份二氨基二苯砜、15份邻苯二甲酸二辛酯、5份200目硅胶粉、5份200目石英粉,先将环氧树脂、二氨基二苯砜和邻苯二甲酸二辛酯加入到烧瓶中,并将烧瓶放入油浴锅中,升温至120℃搅拌至全部溶解,向溶解后的混合物中加入硅胶粉和石英粉,在800r/min转速高速混合20min;最后将上述混合物均匀涂覆在备用的敏化后的氮化铝陶瓷复合基板,涂覆厚度为1.5mm,涂覆后在180℃温度下固化3h,固化成型后即可得到LED背光源散热基板材料。
其中敏化液的制备步骤为:称取100g氯化亚锡加入到300mL质量分数25%盐酸溶液中,搅拌混合15min后加入25g锡酸钠,继续搅拌混合60min后得溶液1;再称取5g氯化钯加入到500mL质量分数20%盐酸溶液中,搅拌混合后加入6g ,搅拌混合30min后得溶液2,并将上述溶液1按滴加速度8mL/min滴加到溶液2中,边滴加边搅拌,滴加完成后放入水浴中,在55℃搅拌混合2h,将得到混合液加入2.5L蒸馏水,即可得敏化液。
经检测,本发明制备的LED背光源散热基板材料拉伸强度达到62.2MPa,导热系数达到64W/m·K,表面电阻值为16MΩ,热扩散系数达到25.7mm2/s。
实例3
首先按重量份数计,分别选取75份氮化铝陶瓷粉末、20份金属铝粉、6份硅藻土,搅拌混合25min后加入到模具中,在70MPa条件下压制成型得坯料;将上述坯料放入马弗炉中,在氩气保护下以6℃/min速率升温至250℃,保温2h后再以13℃/min速率升温至900℃,保温烧结2.1h,烧结后先在200℃退火35min。
Claims (2)
1.一种LED背光源散热基板材料的制备方法,其特征在于具体制备步骤为:
(1)按重量份数计,分别选取70~80份氮化铝陶瓷粉末、15~25份金属铝粉、5~7份硅藻土,搅拌混合20~30min后加入到模具中,在60~80MPa条件下压制成型得坯料;
(2)将上述坯料放入马弗炉中,在氩气保护下以5~7℃/min速率升温至200~300℃,保温1~2h后再以12~15℃/min速率升温至850~950℃,保温烧结1.5~2.5h,烧结后先在150~250℃退火30~40min,再在20~30℃退火20~30min,退火后得氮化铝陶瓷复合基板;
(3)将上述制备得到的氮化铝陶瓷复合基板分别用丙酮、去离子水超声清洗10~15min,清洗后先浸泡在质量分数5%氢氧化钠溶液中,浸泡1~2h后用去离子水冲洗表面3~5次,冲洗后再放入质量分数5%稀硝酸溶液浸泡1~2h,浸泡后分别用无水乙醇、去离子水清洗2~4次,清洗后放入敏化液中敏化5~7min后,得敏化后的氮化铝陶瓷复合基板,备用;
(4)按重量份数计,分别称取60~70份环氧树脂、40~50份二氨基二苯砜、10~15份邻苯二甲酸二辛酯、3~5份180~200目硅胶粉、3~5份180~200目石英粉,先将环氧树脂、二氨基二苯砜和邻苯二甲酸二辛酯加入到烧瓶中,并将烧瓶放入油浴锅中,升温至115~120℃搅拌至全部溶解,向溶解后的混合物中加入硅胶粉和石英粉,在600~800r/min转速高速混合15~20min;
(5)将上述混合物均匀涂覆至步骤(3)备用的敏化后的氮化铝陶瓷复合基板表面,涂覆厚度为1.0~1.5mm,涂覆后在160~180℃温度下固化2~3h,固化成型后即可得到LED背光源散热基板材料。
2.根据权利要求1所述的一种LED背光源散热基板材料的制备方法,其特征在于:所述步骤(3)中的敏化液的制备步骤为:
(1)称取80~100g氯化亚锡加入到200~300mL质量分数25%盐酸溶液中,搅拌混合10~15min后加入20~25g锡酸钠,继续搅拌混合50~60min后得溶液1;
(2)称取3~5g氯化钯加入到300~500mL质量分数20%盐酸溶液中,搅拌混合后加入4~6g,搅拌混合20~30min后得溶液2,并将上述溶液1按滴加速度5~8mL/min滴加到溶液2中,边滴加边搅拌,滴加完成后放入水浴中,在50~55℃搅拌混合1~2h,将得到混合液加入2.0~2.5L蒸馏水,即可得敏化液。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107833965A (zh) * | 2017-12-22 | 2018-03-23 | 刘�东 | 一种大功率led器件散热基板材料 |
CN111548196A (zh) * | 2020-04-28 | 2020-08-18 | 江苏富乐德半导体科技有限公司 | 一种氮化铝陶瓷基板表面处理方法 |
CN113121243A (zh) * | 2021-04-12 | 2021-07-16 | 杭州安誉科技有限公司 | 高亮度led光源用基板及其制备方法 |
CN114980482A (zh) * | 2022-04-26 | 2022-08-30 | 浙江机电职业技术学院 | 一种自散热基板及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08287691A (ja) * | 1995-04-18 | 1996-11-01 | Fujitsu Ltd | スタティックram |
US20070272938A1 (en) * | 2004-08-03 | 2007-11-29 | Tokuyama Corporation | Package For Storing Light Emitting Element And Method For Producing Package For Storing Light Emitting Element |
CN201741721U (zh) * | 2010-05-28 | 2011-02-09 | 陈烱勋 | 板上芯片发光二极管结构 |
CN102201399A (zh) * | 2010-03-22 | 2011-09-28 | 晶元光电股份有限公司 | 发光元件 |
CN102615873A (zh) * | 2012-03-07 | 2012-08-01 | 华中科技大学 | 低温制备非瓷质绝缘导热材料的方法 |
CN103208577A (zh) * | 2013-03-15 | 2013-07-17 | 东莞市凯昶德电子科技股份有限公司 | 带凹杯led氮化铝陶瓷支架的制备方法 |
CN104141072A (zh) * | 2014-07-08 | 2014-11-12 | 蚌埠市高华电子有限公司 | 一种led用低热阻抗的铝基复合散热材料 |
CN104195378A (zh) * | 2014-07-22 | 2014-12-10 | 安徽冠宇光电科技有限公司 | 一种高导热高热稳定的led用铝基复合散热材料 |
-
2016
- 2016-08-05 CN CN201610636570.9A patent/CN106252498B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08287691A (ja) * | 1995-04-18 | 1996-11-01 | Fujitsu Ltd | スタティックram |
US20070272938A1 (en) * | 2004-08-03 | 2007-11-29 | Tokuyama Corporation | Package For Storing Light Emitting Element And Method For Producing Package For Storing Light Emitting Element |
CN102201399A (zh) * | 2010-03-22 | 2011-09-28 | 晶元光电股份有限公司 | 发光元件 |
CN201741721U (zh) * | 2010-05-28 | 2011-02-09 | 陈烱勋 | 板上芯片发光二极管结构 |
CN102615873A (zh) * | 2012-03-07 | 2012-08-01 | 华中科技大学 | 低温制备非瓷质绝缘导热材料的方法 |
CN103208577A (zh) * | 2013-03-15 | 2013-07-17 | 东莞市凯昶德电子科技股份有限公司 | 带凹杯led氮化铝陶瓷支架的制备方法 |
CN104141072A (zh) * | 2014-07-08 | 2014-11-12 | 蚌埠市高华电子有限公司 | 一种led用低热阻抗的铝基复合散热材料 |
CN104195378A (zh) * | 2014-07-22 | 2014-12-10 | 安徽冠宇光电科技有限公司 | 一种高导热高热稳定的led用铝基复合散热材料 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107833965A (zh) * | 2017-12-22 | 2018-03-23 | 刘�东 | 一种大功率led器件散热基板材料 |
CN111548196A (zh) * | 2020-04-28 | 2020-08-18 | 江苏富乐德半导体科技有限公司 | 一种氮化铝陶瓷基板表面处理方法 |
CN113121243A (zh) * | 2021-04-12 | 2021-07-16 | 杭州安誉科技有限公司 | 高亮度led光源用基板及其制备方法 |
CN113121243B (zh) * | 2021-04-12 | 2022-08-09 | 杭州安誉科技有限公司 | 高亮度led光源用基板及其制备方法 |
CN114980482A (zh) * | 2022-04-26 | 2022-08-30 | 浙江机电职业技术学院 | 一种自散热基板及其制备方法 |
CN114980482B (zh) * | 2022-04-26 | 2023-05-05 | 浙江机电职业技术学院 | 一种自散热基板及其制备方法 |
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