CN106252457B - 混合型多晶硅异质结背接触电池 - Google Patents

混合型多晶硅异质结背接触电池 Download PDF

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Publication number
CN106252457B
CN106252457B CN201610206738.2A CN201610206738A CN106252457B CN 106252457 B CN106252457 B CN 106252457B CN 201610206738 A CN201610206738 A CN 201610206738A CN 106252457 B CN106252457 B CN 106252457B
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solar cell
layer
silicon
band gap
silicon substrate
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Chinese (zh)
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CN106252457A (zh
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彼得·J·卡曾斯
大卫·D·史密斯
林承笵
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Maikesheng Solar Energy Co ltd
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SunPower Corp
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Priority claimed from US13/333,904 external-priority patent/US8597970B2/en
Priority claimed from US13/333,908 external-priority patent/US8679889B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
CN201610206738.2A 2011-12-21 2012-12-19 混合型多晶硅异质结背接触电池 Active CN106252457B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13/333,904 2011-12-21
US13/333,904 US8597970B2 (en) 2011-12-21 2011-12-21 Hybrid polysilicon heterojunction back contact cell
US13/333,908 US8679889B2 (en) 2011-12-21 2011-12-21 Hybrid polysilicon heterojunction back contact cell
US13/333,908 2011-12-21
CN201280063686.8A CN104011881B (zh) 2011-12-21 2012-12-19 混合型多晶硅异质结背接触电池

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CN106252457B true CN106252457B (zh) 2018-10-12

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JP (4) JP6208682B2 (ko)
KR (3) KR102101408B1 (ko)
CN (2) CN106252457B (ko)
AU (4) AU2012358982B2 (ko)
DE (1) DE112012005381T5 (ko)
TW (2) TWI559563B (ko)
WO (1) WO2013096500A1 (ko)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9054255B2 (en) 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
CN103594541B (zh) * 2013-10-12 2017-01-04 南昌大学 用于太阳能电池的多晶硅/单晶硅异质结结构及其制备方法
US9196758B2 (en) 2013-12-20 2015-11-24 Sunpower Corporation Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
WO2015122242A1 (ja) * 2014-02-13 2015-08-20 シャープ株式会社 裏面接合型の光電変換素子および太陽光発電システム
US9837576B2 (en) * 2014-09-19 2017-12-05 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating dotted diffusion
US9520507B2 (en) * 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
US9997652B2 (en) 2015-03-23 2018-06-12 Sunpower Corporation Deposition approaches for emitter layers of solar cells
US9525083B2 (en) * 2015-03-27 2016-12-20 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer
US20160284917A1 (en) * 2015-03-27 2016-09-29 Seung Bum Rim Passivation Layer for Solar Cells
US11355657B2 (en) * 2015-03-27 2022-06-07 Sunpower Corporation Metallization of solar cells with differentiated p-type and n-type region architectures
FR3037721B1 (fr) * 2015-06-19 2019-07-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d’une cellule photovoltaique a heterojonction et cellule photovoltaique ainsi obtenue.
US10505064B2 (en) * 2015-09-14 2019-12-10 Sharp Kabushiki Kaisha Photovoltaic device
US9502601B1 (en) * 2016-04-01 2016-11-22 Sunpower Corporation Metallization of solar cells with differentiated P-type and N-type region architectures
CN107611183B (zh) * 2016-06-30 2020-06-19 比亚迪股份有限公司 电池片、电池片矩阵、太阳能电池及电池片的制备方法
US11233162B2 (en) 2017-03-31 2022-01-25 The Boeing Company Method of processing inconsistencies in solar cell devices and devices formed thereby
EP3685445A1 (en) 2017-09-22 2020-07-29 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Interdigitated back-contacted solar cell with p-type conductivity
CN109308470B (zh) * 2018-09-28 2021-01-01 武汉华星光电技术有限公司 指纹感测装置及其制造方法
CN111834470A (zh) * 2019-03-26 2020-10-27 福建金石能源有限公司 一种交叉网状电接触的背接触异质结电池及组件制作方法
ES2901323T3 (es) 2019-07-26 2022-03-22 Meyer Burger Germany Gmbh Dispositivo fotovoltaico y método para fabricar el mismo
CN113284794B (zh) * 2021-02-25 2023-03-24 宁夏隆基乐叶科技有限公司 一种硅基底的掺杂方法、太阳能电池及其制作方法
CN115548155A (zh) 2021-06-30 2022-12-30 晶科绿能(上海)管理有限公司 太阳能电池及光伏组件
CN114744056A (zh) * 2022-04-01 2022-07-12 西安隆基乐叶光伏科技有限公司 太阳能电池及其加工方法
CN114823973A (zh) * 2022-04-20 2022-07-29 通威太阳能(眉山)有限公司 一种p型背接触太阳电池及其制备方法
CN114792743B (zh) * 2022-05-05 2024-07-05 通威太阳能（成都）有限公司 太阳电池及其制备方法、光伏系统
CN115312633B (zh) * 2022-10-11 2023-02-17 金阳(泉州)新能源科技有限公司 一种无掩膜层联合钝化背接触电池及其制备方法
CN116093176B (zh) * 2023-03-31 2023-06-23 福建金石能源有限公司 一种隔离槽特定设置的背接触电池及其制备方法
CN117673207B (zh) * 2024-02-01 2024-05-14 通威太阳能(眉山)有限公司 一种太阳电池的制备方法、太阳电池及光伏组件
CN117810310B (zh) * 2024-02-29 2024-06-07 浙江晶科能源有限公司 太阳能电池制备方法、太阳能电池及光伏组件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101401215A (zh) * 2006-01-26 2009-04-01 阿莱斯技术公司 太阳能电池
CN101438420A (zh) * 2006-05-04 2009-05-20 太阳能公司 具有掺杂的半导体异质结触点的太阳能电池
TW200947725A (en) * 2008-01-24 2009-11-16 Applied Materials Inc Improved HIT solar cell structure
CN101999175A (zh) * 2008-04-09 2011-03-30 应用材料股份有限公司 用于多晶硅发射极太阳能电池的简化背触点

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US7119271B2 (en) * 2001-10-12 2006-10-10 The Boeing Company Wide-bandgap, lattice-mismatched window layer for a solar conversion device
JP4511146B2 (ja) * 2003-09-26 2010-07-28 三洋電機株式会社 光起電力素子およびその製造方法
EP1763086A1 (en) * 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
US7375378B2 (en) * 2005-05-12 2008-05-20 General Electric Company Surface passivated photovoltaic devices
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US8008575B2 (en) * 2006-07-24 2011-08-30 Sunpower Corporation Solar cell with reduced base diffusion area
US20110000532A1 (en) 2008-01-30 2011-01-06 Kyocera Corporation Solar Cell Device and Method of Manufacturing Solar Cell Device
KR101155343B1 (ko) 2008-02-25 2012-06-11 엘지전자 주식회사 백 콘택 태양전지의 제조 방법
US7851698B2 (en) 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US8242354B2 (en) 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
CN101777603B (zh) * 2009-01-08 2012-03-07 北京北方微电子基地设备工艺研究中心有限责任公司 背接触太阳能电池的制造方法
KR101142861B1 (ko) * 2009-02-04 2012-05-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
JP5461028B2 (ja) 2009-02-26 2014-04-02 三洋電機株式会社 太陽電池
CN102349166A (zh) 2009-03-10 2012-02-08 三洋电机株式会社 太阳能电池的制造方法和太阳能电池
MY152718A (en) * 2009-03-30 2014-11-28 Sanyo Electric Co Solar cell
DE102009024598A1 (de) * 2009-06-10 2011-01-05 Institut Für Solarenergieforschung Gmbh Solarzelle mit Kontaktstruktur mit geringen Rekombinationsverlusten sowie Herstellungsverfahren für solche Solarzellen
CN102044579B (zh) 2009-09-07 2013-12-18 Lg电子株式会社 太阳能电池
KR101141219B1 (ko) * 2010-05-11 2012-05-04 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101146736B1 (ko) * 2009-09-14 2012-05-17 엘지전자 주식회사 태양 전지
US8465909B2 (en) * 2009-11-04 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Self-aligned masking for solar cell manufacture
US20110132444A1 (en) 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
JP5627243B2 (ja) 2010-01-28 2014-11-19 三洋電機株式会社 太陽電池及び太陽電池の製造方法
US8932724B2 (en) * 2010-06-07 2015-01-13 General Atomics Reflective coating, pigment, colored composition, and process of producing a reflective pigment
KR20120068226A (ko) * 2010-12-17 2012-06-27 엘지전자 주식회사 태양 전지의 제조 방법
KR101292061B1 (ko) * 2010-12-21 2013-08-01 엘지전자 주식회사 박막 태양전지
KR101773837B1 (ko) * 2011-01-21 2017-09-01 엘지전자 주식회사 태양전지 및 그 제조방법
CN102185030B (zh) 2011-04-13 2013-08-21 山东力诺太阳能电力股份有限公司 基于n型硅片的背接触式hit太阳能电池制备方法
CN102437243B (zh) * 2011-12-08 2013-11-20 常州天合光能有限公司 异质浮动结背钝化的hit太阳能电池结构及其制备工艺

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101401215A (zh) * 2006-01-26 2009-04-01 阿莱斯技术公司 太阳能电池
CN101438420A (zh) * 2006-05-04 2009-05-20 太阳能公司 具有掺杂的半导体异质结触点的太阳能电池
TW200947725A (en) * 2008-01-24 2009-11-16 Applied Materials Inc Improved HIT solar cell structure
CN101999175A (zh) * 2008-04-09 2011-03-30 应用材料股份有限公司 用于多晶硅发射极太阳能电池的简化背触点

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