CN106206867A - The infra red radiation light source of Sandwich-shaped superstructure and manufacture method - Google Patents
The infra red radiation light source of Sandwich-shaped superstructure and manufacture method Download PDFInfo
- Publication number
- CN106206867A CN106206867A CN201610576033.XA CN201610576033A CN106206867A CN 106206867 A CN106206867 A CN 106206867A CN 201610576033 A CN201610576033 A CN 201610576033A CN 106206867 A CN106206867 A CN 106206867A
- Authority
- CN
- China
- Prior art keywords
- metal
- sandwich
- red radiation
- superstructure
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 14
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 45
- 230000002708 enhancing effect Effects 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000005457 Black-body radiation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention belongs to optical field and micro-nano system regions, be specially infra red radiation light source and the manufacture method of a kind of " sandwich " type metal superstructure.The infra red radiation light source of a kind of " sandwich " type metal superstructure: include ITO/IZO substrate, pores array structural metal thin layer at deposition on substrate, dielectric layer and the rectangular-shaped metal array structure prepared on the dielectric layer.Utilize pores array feature optical exception transmission enhancement effect and the coupling of specific morphology micro-nano structure local surface plasmon resonance aerial radiation enhancement effect can strengthen the radiation of surface phasmon MEMS infrared light supply, narrowing of the adjustment to phasmon MEMS infrared source working wave band and live width can be realized by adjusting the geometric parameter of metal array and dielectric layer structure simultaneously.Relate in the present invention surpasses the metal array structure on surface based on metal and has a good extensibility, and processing technology is simply, easily realize.
Description
Technical field
The invention belongs to optical field and micro-nano system regions, be specially the infrared of a kind of " sandwich " type metal superstructure
Radiating light source and manufacture method.
Background technology
Infra-red radiation has very important application in fields such as military affairs, medical treatment, accident search and rescue, remote sensing surveys, the reddest
Outer fight mark can be effectively prevented from friendly troop in combined operation and accidentally injure；In search and rescue action, infrared id signal can
Be greatly enhanced rescue and search success rate, the most infrared mark routing indicator, aircraft landing guide, ship piloting,
And the Infrared Wireless Communication application aspect such as the recognition and tracking of military target has a good application prospect.Use MEMS at present
Novel MEMS infra red radiation light source prepared by technique has high electric light transformation efficiency, multiband spectrum output, volume is little, work can
By and the advantage such as can be mass, but, there is also live width the narrowest, wavelength selectivity is poor, grow away from defects such as detecting limitations.
Big for the live width of current MEMS infra red radiation light source, filtering property is poor, grow away from problems such as detecting limitations, the present invention carries
Go out the surface phasmon enhancing MEMS infra red radiation light source being combined super surface texture based on ITO/IZO substrate " sandwich " type
Structure.
Summary of the invention
The live width that the present invention is directed to current MEMS infra red radiation light source is big, filtering property is poor, grow away from problems such as detecting limitations, carries
MEMS infra red radiation light source and the manufacture method of " sandwich " type metal superstructure are supplied.
The present invention adopts the following technical scheme that realization: the infra red radiation light source of " sandwich " type metal superstructure,
Including ITO/IZO substrate, pores array structural metal thin layer at deposition on substrate, dielectric layer and at dielectric layer
The rectangular-shaped metal array structure of upper preparation, pores array structural metal thin layer, the dielectric layer in middle level and the top of bottom
The rectangular-shaped metal array structure of layer constitutes " sandwich " type metal superstructure.Utilize pores array feature optical exception transmission
Enhancement effect and the coupling of rectangular-shaped metal array structure local surface plasmon resonance aerial radiation enhancement effect can show
Write and strengthen the radiation of MEMS infrared light supply, can be realized by the geometric parameter of adjustment metal array and dielectric layer structure simultaneously
The adjustment of MEMS infrared source working wave band and narrowing of live width.Basic functional principle is: " sandwich " type metal superstructure exists
Light excites lower generation plasmon resonance, on the one hand, produce local surface phasmon under metal superstructure field excitation outside altogether
Shaking and energy accumulating enhanced rad ability occurs, on the other hand, the collective of electronics shakes the heat causing ohmic loss to produce and increases
Strong infra-red radiation.Use MEMS technology, utilize surface plasmon resonance structure blackbody radiation spectrum is had enhancing transmission and
Characteristic is cut out in filtering, can be made into the phasmon MEMS source of infrared radiation that can launch high-performance, narrow line width regulatable.Therefore,
The research work carrying out surface plasmon resonance effect enhancing MEMS infra-red radiation has very important Research Significance and dives
In using value.The metal superstructure strengthening infra-red radiation based on surface phasmon is applied to strengthen infra-red radiation have very
Good novelty.
The manufacture method of the infra red radiation light source of above-mentioned " sandwich " type metal superstructure, comprises the following steps:
The first step: even one layer of negative photoresist on ITO/IZO substrate；
Second step: use electron-beam exposure system that the negative photoresist on ITO/IZO substrate is exposed, and carry out developing, determining
Shadow processes；
3rd step: utilize Magnetron Sputtering Thin Film depositing system to deposition on substrate metallic film；
4th step: the metal removal using Lift off technique photoresist and photoresist to be adhered to above, obtains hole on substrate
Hole array structure metal film layer；
5th step: (this dielectric layer is wanted to continue to utilize chemical meteorology deposition method to grow one layer of dielectric layer on ITO/IZO substrate
Light transmission is good)；
6th step: the evenest one layer of positive photoetching rubber；
7th step: use alignment process the positive photoetching rubber got rid of on the dielectric layer is exposed, to develop, fixing；
8th step: utilize magnetron sputtering metal-coated films again；
9th step: utilize Lift off technique to remove the metal above photoresist and photoresist, obtain rectangular-shaped metal array
Structure, finally gives " sandwich " type metal superstructure.
The present invention proposes a kind of infra red radiation light source based on surface phasmon " sandwich " type metal superstructure.Should
MEMS infra red radiation light source array structure is by pores array structural metal thin layer-dielectric layer-rectangular-shaped metal array structure
Composition, can realize the adjustment to MEMS infra red radiation light source service band, transmission enhancing and line under different array structure parameters
Wide narrows.
Accompanying drawing explanation
Fig. 1 is the whole process flow diagram of the present invention.
Fig. 2 is the technological process design sketch of the present invention.
Fig. 3 is the sectional view of single " sandwich " type metal superstructure infra red radiation light source, in figure: 1-ITO/IZO substrate,
2-pores array structural metal thin layer, 3-dielectric layer, the rectangular-shaped metal array structure of 4-.
Fig. 4 is the structural representation of " sandwich " type metal superstructure infra red radiation light source, wherein bottom pores array knot
The thickness of structure metal film layer ist, the thickness of interlayer dielectric isd, the thickness of the rectangular-shaped metal array structure of top layer ish, a length ofl, width isw, top layer cuboid metal array structure all around between distance be respectivelyP 2、P 1。
When Fig. 5 is for having rectangular-shaped metal array structure and metal array structure rectangular-shaped without top layer, surface etc. is from swashing
Unit strengthens the resonance line of infra-red radiation metal superstructure, and result shows to increase the rectangular-shaped metal array structure of top layer can be real
Now regulation and control and the enhancing of optical transmission to " sandwich " type metal superstructure infra-red radiation resonance peak position.
Fig. 6 is that the surface phasmon obtained during the thickness adjusting dielectric layer strengthens the humorous of infra-red radiation metal superstructure
Shake spectral line, and result shows can realize " sandwich " type metal superstructure infra-red radiation humorous by the thickness of adjustment dielectric layer
Shake the adjustment of peak position.
Fig. 7 is that the surface phasmon obtained during the thickness adjusting bottom pores array structural metal thin layer strengthens infrared
The resonance line of radiation metal superstructure, result shows that the thickness increasing bottom pores array structural metal thin layer can realize
" sandwich " type metal superstructure infra-red radiation work live width is narrowed, but its intensity in transmission can weaken.
Fig. 8 is that the surface phasmon obtained during the size adjusting the rectangular-shaped metal array structure of top layer strengthens infrared spoke
Radioglold belongs to the resonance line of superstructure, and result shows, in the case of top layer rectangular-shaped metal structure thickness is certain, to change top
Layer rectangular-shaped metal array structure area can realize the adjustment to " sandwich " type metal superstructure resonance peak position and
The change of optical transmission intensity.
Fig. 9 is to adjust the surface phasmon enhancing infra-red radiation that the array period of rectangular-shaped metal array structure obtains
The resonance line of metal superstructure, result shows that its transmission of increase of the array period along with rectangular-shaped metal array structure is strong
Degree reduces, but transmission peaks narrows.
Detailed description of the invention
Below in conjunction with the accompanying drawings the whole machining process of the present invention is described in further detail.
With reference to figure one, figure two, the infra red radiation light source of " sandwich " type metal superstructure: include ITO/IZO substrate, at base
On sheet deposition pores array structural metal (Ag) thin layer, dielectric layer and prepare on the dielectric layer rectangular-shaped
Metal (Ag) array structure, pores array structural metal thin layer, the dielectric layer in middle level and the top layer of bottom rectangular-shaped
Metal array structure constitutes " sandwich " type metal superstructure.Wherein the thickness of underlying metal film layer ist, interlayer dielectric
Thickness bed, the thickness of top-level metallic array structure ish, single cuboid metal derby a length ofl, width isw, top layer gold
Belong to array structure all around between distance be respectivelyP 2、P 1.When metal superstructure parametert、d、l、w、P 1、P 2In any one
When individual parameter changes, surface phasmon strengthens the resonance line of infra-red radiation metal superstructure and all can become therewith
Change.Therefore can by reasonably design metal superstructure parameter realize high emission performance, narrow linewidth and tunable etc. from
Excimer MEMS infra red radiation light source.
Metal superstructure bottom pores array structural metal thin film layer thickness (t) regulation, whentWhen taking different values, table
Face phasmon strengthens the cavity linewidth of infra-red radiation metal superstructure and can change.And along withtThe increase of numerical value,
Resonance spectrum live width narrows, but its intensity in transmission weakens.
Metal superstructure dielectric layer thickness (d) regulation, whendWhen taking different values, surface phasmon strengthens infrared
The resonance line of radiation metal superstructure can drift about, and along withdThe increase of numerical value, resonance line can occur blue shift.
The regulation of metal superstructure top layer rectangular-shaped metal array structure size, changes the rectangular-shaped metal array of top layer
The area of structure can realize " sandwich " type metal superstructure optical transmission intensity and the adjustment of resonance peak position.
When the array period of metal superstructure changes, surface phasmon strengthens the saturating of infra-red radiation metal superstructure
Penetrate intensity and resonance spectral line width changes the most therewith.Its resonance spectrum live width of array period increasing metal superstructure can narrow,
But intensity in transmission can weaken.
Above-mentioned based on surface phasmon strengthen infra-red radiation " sandwich " type metal superstructure manufacture method, including with
Lower step:
The first step: even one layer of negative photoresist on ITO/IZO substrate.
Second step: use electron-beam exposure system that the negative photoresist on ITO/IZO substrate is exposed, and show
Shadow, fixing process.
3rd step: utilize Magnetron Sputtering Thin Film depositing system to deposition on substrate metal (Ag) thin film.
4th step: use Lift off technique by photoresist and the metal removal that adheres to above.
5th step: utilize chemical meteorology deposition method to grow one layer of dielectric layer (SiO on ITO/IZO substrate2), and carry out
Annealing.
6th step: continue even one layer of positive photoetching rubber on ITO/IZO substrate.
7th step: use alignment process the positive photoetching rubber got rid of on the dielectric layer is exposed, to develop, fixing.
8th step: utilize magnetron sputtering plating (Ag) thin film again.
9th step: utilize Lift off technique to remove photoresist and metal above, obtain " sandwich " type metal superjunction
Structure.
" sandwich " type metal superstructure structure, under the resonant excitation of outfield, produces in rectangular-shaped shape metal surface and has
The what is called " focus " of high field local, these " focuses " make metal surpass the enhancing of surface texture infra-red radiation, on the other hand, super surface
Collective's concussion of upper metal array electronics causes ohmic loss to produce heat radiation, strengthens providing extra energy for infra-red radiation
Amount is supplemented.Surface plasmon resonance structure (SPR) is utilized to have enhancing transmission and filtering cutting characteristic to blackbody radiation spectrum,
Can be by adjusting geometric parameter and the array period of " sandwich " type metal superstructure, it is achieved high emission performance, narrow linewidth can
The phasmon MEMS infra red radiation light source of tuning.
Claims (2)
1. the infra red radiation light source of " sandwich " type metal superstructure, it is characterised in that include ITO/IZO substrate, on substrate
The pores array structural metal thin layer of deposition, dielectric layer and the rectangular-shaped metal array prepared on the dielectric layer
Structure.
2. the manufacture method of the infra red radiation light source of " sandwich " type metal superstructure as claimed in claim 1, its feature exists
In comprising the following steps:
The first step: even one layer of negative photoresist on ITO/IZO substrate；
Second step: use electron-beam exposure system that the negative photoresist on ITO/IZO substrate is exposed, and carry out developing, determining
Shadow processes；
3rd step: utilize Magnetron Sputtering Thin Film depositing system to deposition on substrate metallic film；
4th step: the metal removal using Lift off technique photoresist and photoresist to be adhered to above, obtains hole on substrate
Hole array structure metal film layer；
5th step: continue to utilize chemical meteorology deposition method to grow one layer of dielectric layer on ITO/IZO substrate；
6th step: the evenest one layer of positive photoetching rubber；
7th step: use alignment process the positive photoetching rubber got rid of on the dielectric layer is exposed, to develop, fixing；
8th step: utilize magnetron sputtering metal-coated films again；
9th step: utilize Lift off technique to remove the metal above photoresist and photoresist, obtain rectangular-shaped metal array
Structure, finally gives " sandwich " type metal superstructure strengthening infra-red radiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610576033.XA CN106206867B (en) | 2016-07-21 | 2016-07-21 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610576033.XA CN106206867B (en) | 2016-07-21 | 2016-07-21 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106206867A true CN106206867A (en) | 2016-12-07 |
| CN106206867B CN106206867B (en) | 2018-10-19 |
Family
ID=57492130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610576033.XA Expired - Fee Related CN106206867B (en) | 2016-07-21 | 2016-07-21 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106206867B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108107684A (en) * | 2017-12-27 | 2018-06-01 | 陕西师范大学 | It is a kind of regulate and control circular dichroism it is double-layer nanostructured and preparation method thereof |
| CN108169171A (en) * | 2017-12-08 | 2018-06-15 | 苏州大学 | A kind of refraction index test based on surface plasmon resonance and preparation method thereof |
| CN109375477A (en) * | 2018-12-07 | 2019-02-22 | 中山科立特光电科技有限公司 | A kind of preparation method of metal spiral micro-nano structure |
| CN109901258A (en) * | 2019-04-04 | 2019-06-18 | 湖南大学 | A kind of micro-nano integrated device of Color Full holography and preparation method thereof |
| CN112436287A (en) * | 2020-11-30 | 2021-03-02 | 江西师范大学 | Electromagnetic super-surface, preparation method thereof and nano broadband notch filter |
| JP2021100033A (en) * | 2019-12-20 | 2021-07-01 | 国立研究開発法人物質・材料研究機構 | Detection element and light emitting element for infrared light |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103308486A (en) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | Surface-plasma-based infrared photon absorption device of composite resonator |
| US8987754B1 (en) * | 2013-09-16 | 2015-03-24 | Sandia Corporation | Highly directional thermal emitter |
| US11320306B2 (en) * | 2014-12-23 | 2022-05-03 | University Of Central Florida Research Foundation, Inc. | Optical frequency-selective absorber-based infrared detector, methods, and applications |
| CN104614077A (en) * | 2015-02-05 | 2015-05-13 | 电子科技大学 | Optical window with high terahertz wave transmission rate and low infrared light transmission rate |
| CN105355703B (en) * | 2015-11-18 | 2017-03-22 | 南京大学 | Absorption structure of infrared quantum well photoelectric detector |
-
2016
- 2016-07-21 CN CN201610576033.XA patent/CN106206867B/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108169171A (en) * | 2017-12-08 | 2018-06-15 | 苏州大学 | A kind of refraction index test based on surface plasmon resonance and preparation method thereof |
| CN108169171B (en) * | 2017-12-08 | 2020-12-25 | 苏州大学 | Refractive index test based on surface plasmon resonance and manufacturing method thereof |
| CN108107684A (en) * | 2017-12-27 | 2018-06-01 | 陕西师范大学 | It is a kind of regulate and control circular dichroism it is double-layer nanostructured and preparation method thereof |
| CN108107684B (en) * | 2017-12-27 | 2020-03-24 | 陕西师范大学 | Double-layer nanostructure for regulating circular dichroism and preparation method thereof |
| CN109375477A (en) * | 2018-12-07 | 2019-02-22 | 中山科立特光电科技有限公司 | A kind of preparation method of metal spiral micro-nano structure |
| CN109901258A (en) * | 2019-04-04 | 2019-06-18 | 湖南大学 | A kind of micro-nano integrated device of Color Full holography and preparation method thereof |
| JP2021100033A (en) * | 2019-12-20 | 2021-07-01 | 国立研究開発法人物質・材料研究機構 | Detection element and light emitting element for infrared light |
| JP7450912B2 (en) | 2019-12-20 | 2024-03-18 | 国立研究開発法人物質・材料研究機構 | Detection element and light emitting element for infrared light |
| CN112436287A (en) * | 2020-11-30 | 2021-03-02 | 江西师范大学 | Electromagnetic super-surface, preparation method thereof and nano broadband notch filter |
| CN112436287B (en) * | 2020-11-30 | 2022-07-29 | 江西师范大学 | Electromagnetic super surface, preparation method thereof and nano broadband notch filter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106206867B (en) | 2018-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106206867A (en) | The infra red radiation light source of Sandwich-shaped superstructure and manufacture method | |
| EP2815436B1 (en) | Micro-led array with filters | |
| CN111562685B (en) | Intelligent infrared light switch for infrared window material and manufacturing method | |
| CN103748964B (en) | For producing method, method and the luminous semiconductor chip for producing conversion tube core of luminous semiconductor chip | |
| KR102420017B1 (en) | Optical filter and electronic device including the same | |
| CN104218443A (en) | Two-dimensional stratified material based practical saturable absorber and production method thereof | |
| CN104155712A (en) | Near-infrared filter for optical communication | |
| CN109962125A (en) | A kind of plasmon enhancement type deep ultraviolet detector and preparation method thereof | |
| CN108445570A (en) | A kind of wavelength selector based on surface plasmon-polarition Yu optics cavity close coupling | |
| CN206654729U (en) | A kind of enhanced infrared radiator structure of surface phasmon | |
| CN113299775B (en) | High-speed short-wave communication detector | |
| CN107069432B (en) | The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser | |
| CN106185784B (en) | MEMS infrared light supplies based on wet method pre-release structure and preparation method thereof | |
| CN107390305A (en) | The full light absorber structure of double frequency-band | |
| CN104538514A (en) | Reverse LED chip structure and manufacturing method thereof | |
| CN204290028U (en) | Based on the practical saturable absorption device of two-dimensional layer material | |
| CN204333022U (en) | Flip LED chips structure | |
| CN207883688U (en) | A kind of Terahertz antenna chip with radiation limitation mount structure | |
| CN102721658A (en) | Method for manufacturing pyroelectric spectrum detector | |
| CN108732748A (en) | Mostly band Meta Materials absorber design method based on enhancing high order resonance mould absorptivity | |
| CN111341874B (en) | Self-driven broadband photoelectric detector based on Si micropore/CuO vertical structure heterojunction and preparation method thereof | |
| CN111290146A (en) | Surface plasma optical switch based on periodic circular ring-slit composite hole array | |
| CN102820391B (en) | Silicon-based near-infrared quantum-dot electroluminescent device and preparation method thereof | |
| CN113495310A (en) | Light filtering film system based on double glass hole array, near infrared spectrum chip and preparation method thereof | |
| CN106399956B (en) | A kind of 4H- silicon carbide compound noble metal film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181019 Termination date: 20190721 |