CN113495310A - Light filtering film system based on double glass hole array, near infrared spectrum chip and preparation method thereof - Google Patents
Light filtering film system based on double glass hole array, near infrared spectrum chip and preparation method thereof Download PDFInfo
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- 238000001914 filtration Methods 0.000 title claims abstract description 21
- 238000002329 infrared spectrum Methods 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 26
- 229910052709 silver Inorganic materials 0.000 claims description 26
- 239000004332 silver Substances 0.000 claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 239000007888 film coating Substances 0.000 claims description 4
- 238000009501 film coating Methods 0.000 claims description 4
- 238000002164 ion-beam lithography Methods 0.000 claims description 4
- 238000000638 solvent extraction Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
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- 238000005265 energy consumption Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
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- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- 238000007738 vacuum evaporation Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0831—Masks; Aperture plates; Spatial light modulators
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/207—Filters comprising semiconducting materials
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J2003/1278—Mask with spectral selection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2823—Imaging spectrometer
- G01J2003/2826—Multispectral imaging, e.g. filter imaging
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
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Abstract
The invention discloses a light filtering film system and a near infrared spectrum chip based on a double-glass hole array and a preparation method thereof. The subwavelength hole array structure manufactured by utilizing the principle of the Surface Plasmon Polariton (SPP) has the advantages of natural corrosion resistance, continuous modulation, application to near-infrared bands and the like.
Description
Technical Field
The invention relates to the field of manufacturing of spectrum chips, in particular to a light filtering film system based on a double-glass-hole array, a near infrared spectrum chip and a preparation method thereof.
Background
Compared with conventional spectrum detection equipment, the spectrum chip has the advantages of low load, high integration level, low energy consumption and the like, is widely concerned in recent years, and is mostly used for manufacturing miniature spectrum cameras on the market at present, but the filtering module still adopts the traditional dye or pigment filtering mode, can only filter specific wavelengths, has low energy utilization rate, can only be used for visible light bands, and has great limitation.
The dispersive module of conventional spectral detection devices is mainly made of chemical dyes or colored glass. Because of large optical loss and poor stability, the material cannot bear strong light irradiation for a long time, and the color filtering performance is determined by the molecular characteristics of the material, and only specific wavelengths can be filtered. The narrow-band color filter with the metal sub-wavelength optical structure mainly comprises metal, has the advantages of high natural weather resistance, ultraviolet exposure resistance, saline-alkali environment resistance and the like, and can realize continuous modulation of any wavelength. Compared with the product with the same principle, the method comprises the following steps: the conventional metal hole array super-transmission component mostly has a metal-medium two-layer structure, such as a silicon dioxide medium 1, a metal film 2 and periodic round holes 3 shown in fig. 1, and because both sides of the periodic metal structure have Bloch modes, if the structures or the media on both sides are asymmetric, a transmission spectrum can generate two groups of peaks corresponding to the media on both sides. The same filtering component generates two strong transmission peaks which cannot be distinguished for the photoelectric detection module, only the transmission luminous fluxes of two wave bands are accumulated, and an electric signal which is equivalent to the sum of the intensities of two optical signals is output, so that the practical application is difficult.
Disclosure of Invention
In order to solve the defects of the prior art, the light filtering film system and the near infrared spectrum chip based on the double-glass hole array and the preparation method thereof are provided.
In order to realize the purpose, the following technical scheme is provided:
the filtering film system based on the double-glass hole array comprises a lower layer plating accompanying sheet adopting a silicon dioxide medium, a silver film plated on the lower layer plating accompanying sheet and a covering sheet plated on the upper layer of the silver film, wherein the covering sheet adopts the silicon dioxide medium, and the silver film is etched with the hole array.
Preferably, the pore array has a period P and a pore diameter r:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
λ is a preset transmission peak wavelength.
The near infrared spectrum chip comprises a filter film system based on a double-glass pore array, wherein the filter film system comprises an area A, an area B and an area C.the period of the pore array in the area A is P1, and the aperture of the pore array is R1; the hole array period of the B area is P2, and the hole diameter is R2; the hole array period of the C area is P3, and the hole diameter is R3; by analogy, the hole array period of the N area is Pn, and the hole diameter is Rn; each region on the filter film system corresponds to one pixel point or one pixel region on the detector, namely, the region A corresponds to a first pixel point or a first pixel region, the region B corresponds to a second pixel point or a second pixel region, the region B corresponds to an Nth pixel point or an Nth pixel region, and the pixel region consists of a plurality of pixel points.
The preparation method of the near infrared spectrum chip of the filter film system based on the double-glass hole array comprises the following steps:
s1: selecting two silicon dioxide media matched with the detector in size, wherein the transmissivity T of the silicon dioxide media in a near-infrared band of 1-2 mu m is more than or equal to 90%; one piece is used as a lower layer plating piece, and the other piece is used as a covering piece;
s2: depositing a silver film with the thickness of 100nm-500nm on the lower plating piece by using an evaporation method;
s3: etching an array of holes on the silver film using focused ion beam lithography, the array of holes comprising a period P and a hole diameter r, wherein:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
λ is a preset transmission peak wavelength; partitioning the silver film according to the requirements of the light filtering chip, wherein different areas adopt different hole array periods and different hole diameters;
s4: coating a covering piece on the silver film with the etched hole array in a film coating mode to finally prepare a light filtering film system;
s5: and integrating and attaching the filter film system on the detector, wherein the filter regions correspond to the pixel points one by one, and thus the near infrared spectrum chip is manufactured.
The invention has the beneficial effects that:
1. the subwavelength hole array structure manufactured by utilizing the principle of the Surface Plasmon Polariton (SPP) has the advantages of natural corrosion resistance, continuous modulation, application to near-infrared bands and the like.
2. The double-layer medium filtering film system is integrated on a detector, so that the upgrading of the spectrum level of common infrared detection equipment can be realized, and the double-layer medium filtering film system can be applied to small remote sensing satellites, unmanned aerial vehicles and other scientific research scenes, and can also be applied to mobile phones, household appliances and other civil scenes. The spectrum detection device with the working band in the near infrared region also has very wide application prospect, and has application in the fields of human skin detection, blood sugar spectrum detection, meat freshness detection and the like besides conventional satellite remote sensing and heat source detection and identification.
Drawings
FIG. 1 is a schematic diagram of a conventional filter system;
FIG. 2 is a schematic diagram of a near infrared spectrum chip using the filter film system of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
The filter film system based on the dual glass hole array as shown in fig. 2 comprises a lower layer plating film 12 adopting a silicon dioxide medium, a silver film 11 plated on the lower layer plating film 12 and a cover sheet 10 plated on the upper layer of the silver film 11, wherein the cover sheet 10 adopts the silicon dioxide medium, and the silver film 11 is etched with a hole array 14. The silica dielectric may be quartz glass or K9 glass.
The pore array has a period P and an aperture r:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
λ is a preset transmission peak wavelength.
Through the formula, the parameter period P and the aperture r which are required to be set and correspond to the transmission peak wavelength lambda and need to be modulated can be directly obtained, researches show that the period P directly influences the peak position of the transmission peak, and the aperture r directly influences the transmissivity of the film system and the broadening of the transmission peak. This equation illustrates a first order linear relationship of wavelength λ and period P, aperture r.
The number of the hole array periods P is not less than 16 (namely 4 x 4 periods); the thickness of the silicon dioxide medium is 0.05-0.5 mm; the thickness of the silver film is 50-300 nm.
The near infrared spectrum chip of the filter film system based on the double-glass hole array comprises a detector 13 and the filter film system, wherein the filter film system is integrally attached to the detector 13.
The light filtering film system comprises an area A, an area B and an area C, wherein the hole array period of the area A is P1, and the hole diameter is R1; the hole array period of the B area is P2, and the hole diameter is R2; the hole array period of the C area is P3, and the hole diameter is R3; by analogy, the hole array period of the N area is Pn, and the hole diameter is Rn; each region on the filter film system corresponds to one pixel point or one pixel region on the detector, namely, the region A corresponds to a first pixel point or a first pixel region, the region B corresponds to a second pixel point or a second pixel region, the region B corresponds to an Nth pixel point or an Nth pixel region, and the pixel region consists of a plurality of pixel points.
The distance between adjacent regions in the filter film system is greater than or equal to the propagation distance of the excimer in the metal.
The preparation method of the near infrared spectrum chip of the filter film system based on the double-glass hole array is characterized by comprising the following steps of:
s1: selecting two pieces of quartz glass matched with the size of the detector, wherein the transmissivity T of the quartz glass in a near-infrared band of 1-2 mu m is more than or equal to 90%; one piece is used as a lower layer plating piece, and the other piece is used as a covering piece;
s2: depositing a silver film with the thickness of 100nm-500nm on the lower plating piece by using an evaporation method;
s3: etching an array of holes on the silver film using focused ion beam lithography, the array of holes comprising a period P and a hole diameter r, wherein:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
λ is a preset transmission peak wavelength; partitioning the silver film according to the requirements of the light filtering chip, wherein different areas adopt different hole array periods and different hole diameters;
s4: coating a covering piece on the silver film with the etched hole array in a film coating mode to finally prepare a light filtering film system;
s5: and integrating and attaching the filter film system on the detector, wherein the filter regions correspond to the pixel points one by one, and thus the near infrared spectrum chip is manufactured.
The coating method comprises the following steps: plating metal and a second dielectric film by methods of PECVD, vacuum evaporation, magnetron sputtering and the like;
the etching method comprises the following steps: and preparing a hole array in micro-nano processing modes such as ion beam focusing etching, electronic book etching, ultraviolet lithography, nano imprinting and the like.
Description of the principle:
according to the formula:
i, j are each integers, depending on the well shape, P is the array period, εmAnd εdRespectively, the dielectric constants of the metal and the medium in contact therewith. As can be seen from the formula, the shape of the hole is fixed, the position of the transmission peak is red-shifted as the array period P becomes larger, and the period P and the wavelength of the transmission peak form a linear correlation relationship. The traditional subwavelength hole array film has two different transmission peaks because the upper layer medium is air, the lower layer medium is SiO2, and the dielectric constants of the upper layer medium and the lower layer medium are different, and the transmission peaks are covered by the second layer of quartz glass medium, so that the wavelengths of electromagnetic waves coupled by plasmons generated on the upper surface and plasmons generated on the lower surface are the same, and then the superposition of the two transmission peaks is realized, the output is a single transmission peak, and the incident light with the rest wavelengths is blocked because the wavelength of the incident light is far larger than the aperture, only the light conforming to the structure can be coupled with free electrons on the metal surface to form an excimer, and then the light is decoupled and emitted on the emergent surface, and is released, so that the selective transmission of single wavelength is realized, namely the filter film with specific wavelength.
Example one
The lambda transmission peak wavelength is required to be 1.25 μm, 1.40 μm, 1.55 μm and 1.70 μm, and a 30 × 30mm indium gallium arsenic image sensing chip is selected as the detector.
The preparation method of the near infrared spectrum chip of the filter film system based on the double-glass hole array comprises the following steps:
s1: selecting two pieces of quartz glass with the thickness of 30 x 30mm, wherein the transmissivity T of the quartz glass in a near infrared wave band of 1-2 mu m is more than or equal to 90 percent; one piece is used as a lower layer plating piece, and the other piece is used as a covering piece;
s2: depositing a silver film with the thickness of 200nm (the thickness is larger than the skin depth of silver in a near infrared band) on the lower plating partner sheet by using an evaporation method;
s3: etching an array of holes on the silver film using focused ion beam lithography, the array of holes comprising a period P and a hole diameter r, wherein:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
i.e., λ is 1.25 μm, 1.40 μm, 1.55 μm, 1.70 μm, respectively. The calculations give table 1:
TABLE 1
| Serial number | Period P (μm) | Hole radius r (mum) | Transmission peak wavelength lambda (mum) | Transmittance% |
| 1 | 0.8 | 0.18 | 1.25 | 45 |
| 2 | 0.9 | 0.20 | 1.40 | 44 |
| 3 | 1 | 0.23 | 1.55 | 47 |
| 4 | 1.1 | 0.25 | 1.70 | 44 |
The hole array is etched according to the above calculation data.
S4: coating a covering piece on the silver film with the etched hole array in a film coating mode to finally prepare a light filtering film system;
s5: and integrating and attaching the filter film system on the indium gallium arsenic image sensing chip, and enabling the hole arrays with the four periodic parameters to correspond to the pixels of the indium gallium arsenic image sensing chip one by one to obtain the near infrared spectrum chip.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. The filtering film system based on the double-glass hole array is characterized by comprising a lower layer plating accompanying sheet adopting a silicon dioxide medium, a silver film plated on the lower layer plating accompanying sheet and a covering sheet plated on the upper layer of the silver film, wherein the covering sheet adopts the silicon dioxide medium, and the silver film is etched with the hole array.
2. The dual glass-pore-array-based optical filter film system of claim 1, wherein the pore array has a period P and an aperture r:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
λ is a preset transmission peak wavelength.
3. The near infrared spectrum chip of the filter film system based on the dual glass hole array as claimed in claim 2, comprising a detector and the filter film system as claimed in claim 2, wherein the filter film system is integrally attached to the detector.
4. The near infrared spectrum chip based on the double glass hole array filter film system of claim 3, wherein the filter film system comprises an A region, a B region and a C region, the A region has a hole array period of P1 and an aperture of R1; the hole array period of the B area is P2, and the hole diameter is R2; the hole array period of the C area is P3, and the hole diameter is R3; by analogy, the hole array period of the N area is Pn, and the hole diameter is Rn; each region on the filter film system corresponds to one pixel point or one pixel region on the detector, namely, the region A corresponds to a first pixel point or a first pixel region, the region B corresponds to a second pixel point or a second pixel region, the region B corresponds to an Nth pixel point or an Nth pixel region, and the pixel region consists of a plurality of pixel points.
5. The near infrared spectrum chip of the filter film system based on the dual glass hole array as claimed in claim 4, wherein the distance between adjacent regions in the filter film system is greater than or equal to the propagation distance of the excimer in the metal.
6. The method for preparing a near infrared spectrum chip of the double-glass-hole-array-based optical filter film system according to any one of claims 3 to 5, wherein the method comprises the following steps:
s1: selecting two silicon dioxide media matched with the detector in size, wherein the transmissivity T of the silicon dioxide media in a near-infrared band of 1-2 mu m is more than or equal to 90%; one piece is used as a lower layer plating piece, and the other piece is used as a covering piece;
s2: depositing a silver film with the thickness of 100nm-500nm on the lower plating piece by using an evaporation method;
s3: etching an array of holes on the silver film using focused ion beam lithography, the array of holes comprising a period P and a hole diameter r, wherein:
P＝0.66λ-0.025..........................1.1
r＝0.2p+0.02............................1.2
λ is a preset transmission peak wavelength; partitioning the silver film according to the requirements of the light filtering chip, wherein different areas adopt different hole array periods and different hole diameters;
s4: coating a covering piece on the silver film with the etched hole array in a film coating mode to finally prepare a light filtering film system;
s5: and integrating and attaching the filter film system on the detector, wherein the filter regions correspond to the pixel points one by one, and thus the near infrared spectrum chip is manufactured.
Priority Applications (1)
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