CN104330847A - Reflective broadband 1/4 wave plate - Google Patents

Reflective broadband 1/4 wave plate Download PDF

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Publication number
CN104330847A
CN104330847A CN201410663285.7A CN201410663285A CN104330847A CN 104330847 A CN104330847 A CN 104330847A CN 201410663285 A CN201410663285 A CN 201410663285A CN 104330847 A CN104330847 A CN 104330847A
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China
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wave plate
grating
nanometers
broadband
quarter wave
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CN201410663285.7A
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胡安铎
初凤红
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Shanghai University of Electric Power
University of Shanghai for Science and Technology
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Shanghai University of Electric Power
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3083Birefringent or phase retarding elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

The invention relates to a reflective broadband 1/4 wave plate. The reflective broadband 1/4 wave plate comprises a substrate (5); an alumina film (4), a silver film (3), an alumina film (2) and a silicon oxide film (1) are orderly formed on the substrate (5) in a plating way; a rectangular groove grating is etched out in the silicon oxide film (1); the period of the grating is 1178-1188nm, the etching depth is 2517-2527nm, and the duty ratio is 0.255. Compared with the prior art, the reflective broadband 1/4 wave plate can be manufactured by use of the optical holographic recording technology or an electron beam direct writing device in combination with the micro-electronic deep etching process and the coating technology, is highly available in raw materials, low in manufacturing cost, and has important practical prospect.

Description

A kind of broadband reflective quarter wave plate
Technical field
The present invention relates to a kind of polarization optics assembly, especially relate to a kind of broadband reflective quarter wave plate.
Background technology
In polarization optical system, wave plate is used to provide certain phase delay, thus realizes the control to optical polarization.Quarter wave plate can be used for the mutual conversion realized between linearly polarized light and circularly polarized light.Traditional quarter wave plate utilizes the birefringence of aeolotropic crystal, for providing pi/2 phase to postpone between two orhtogonal linear polarizaiton light, because phase-delay quantity is relevant to the thickness of wave plate, thus traditional wave plate only can be operated in a narrower wavestrip, cannot meet the demand of broadband application.
Sub-wave length grating has form birefringent efficiency, can be used for designing the wave plate of broadband high-efficiency.Because reflective gratings has different ways of realization, the way of realization based on the reflective wave plate of sub-wave length grating also has multiple.Such as, the people such as Passilly penetrate effect entirely based on interior, have devised broadband quarter wave plate, and have carried out analyzing (N.Passilly et al., J.Opt.10,015001 (2008)) to its physical mechanism.The people such as Magnusson devise broadband reflective quarter wave plate (R.Magnusson et al., Opt.Lett.35,2472 (2010)) based on guided mode resonance effect.The people such as Pang utilize wire grating to devise the broadband waveplate (Y.Pang et al., Opt.Express.17,2871 (2009)) of broadband reflective.
From the angle of Grating Design, high-level efficiency reflection grating also wants a kind of important way of realization, i.e. metal dielectric reflection grating, and this grating by adding the metal film of one deck high reflectance in deielectric-coating, etched diffraction grating groove in top dielectric film, thus realize the reverse diffraction of high-level efficiency.The anti-reflection grating structure of metal and dielectric proposes (N.Bonod et al. by French scholar the earliest, Opt.Commun.260,649 (2006)), be applied to high-power laser pulse compression, it has the advantages such as high-level efficiency, broadband, high power damage threshold.If based on sub-wavelength metal dielectric Grating Design broadband reflective wave plate, so it will have the advantage of the grating being applied to pulse compression.
Based on the broadband reflective wave plate of sub-wavelength metal dielectric grating, essence remains a kind of high dencity grating.The diffraction of high dencity grating can not be explained by simple scalar optical grating diffraction equation, and must adopt the Maxwell equation of vector form and in conjunction with boundary condition, accurately calculate result by the computer program of coding.The people such as Moharam have given the algorithm (M.G.Moharam et al., J.Opt.Soc.Am.A.12,1077 (1995)) of rigorous coupled wave approach.Utilize rigorous couple-wave analysis, the phase place of grating diffration efficiency and diffracted wave can be calculated.Conjunction rigorous couple-wave analysis is combined with simulated annealing, can the reflective quarter wave plate of optimal design of broadband.
Summary of the invention
Object of the present invention is exactly provide a kind of laser that is 1550 nano wave lengths for centre wavelength to provide a kind of centre wavelength to be the broadband reflective wave plate of 1550 nano wavebands to overcome defect that above-mentioned prior art exists.Under vertical incidence condition, this wave plate only has 0 order diffraction light output, for the incident light of TE (direction of vibration of electric field intensity is perpendicular to the plane of incidence) and TM (direction of vibration of magnetic vector is perpendicular to the plane of incidence) polarization, when lambda1-wavelength is 1470 ~ 1630 nanometer, phase differential between 0 order diffraction light between 88.5 ° ~ 91.5 °, and for the efficiency of the diffraction light of two kinds of polarization states all higher than 96%.Therefore, this wave plate can for the control of optical polarization in wider bandwidth.
Object of the present invention can be achieved through the following technical solutions:
A kind of broadband reflective quarter wave plate, comprises substrate, and in substrate, pellumina, silverskin, pellumina and silicon oxide film are established in plating successively,
Etching forms rectangular-groove grating in described silicon oxide layer, and the cycle of this grating is 1178 ~ 1188 nanometers, and etching depth is 2517 ~ 2527 nanometers, and dutycycle is 0.255, and dutycycle is the wide ratio with screen periods of grating ridge.
The cycle of described rectangular-groove grating is 1183 nanometers, and etching depth is 2522 nanometers.
The ridge of described rectangular-groove grating is wide between 300 ~ 303 nanometers, and its representative value is 301.5 nanometers.Described pellumina is articulamentum, and thickness is between 56 ~ 66 nanometers, and its representative value is 61 nanometers.
Silverskin mainly plays the effect of reflected light, and general thickness is only greater than 100 nanometers, makes light wave cannot be through.
Compared with prior art, the present invention be directed to laser that centre wavelength is 1550 nano wave lengths provides a kind of centre wavelength to be the broadband reflective wave plate of 1550 nano wavebands, TE and TM polarized light vertical incidence, wherein TE polarized incident light corresponds to the direction of vibration of electric field intensity perpendicular to the plane of incidence, and TM polarized incident light corresponds to the direction of vibration of magnetic vector perpendicular to the plane of incidence.Because screen periods is sub-wavelength magnitude, only 0 order diffraction light is propagated, and its direction is anti-parallel to incident light.Silverskin has very wide the reflectivity that in spectral range, all tool is higher, can realize the reverse diffraction of broadband high-efficiency that centre wavelength is 1550 nanometers and other wavelength.The geometric parameter of sub-wave length grating is different, and the phase place exporting diffraction light wave is also different.By the geometry of optimal design sub-wave length grating, the phase delay of the expectation to TE and TM polarizing diffraction grating can be obtained, the silverskin that the present invention adopts has very wide the reflectivity that in spectral range, all tool is higher ", top dielectric grating has diffraction characteristic, screen periods is sub-wavelength magnitude, only 0 order diffraction light is propagated, its direction is anti-parallel to incident light, therefore, as long as restriction screen periods is optical wavelength magnitude, namely an order of diffraction time is only had to carry out Energy transmission, no matter so degree of depth of grating, dutycycle how value, all should be able to realize high-level efficiency diffraction.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
When Fig. 2 is the incidence of TE or TM polarized light, 0 order diffraction efficiency of the present invention is with the change curve of lambda1-wavelength;
Fig. 3 be TE or TM polarized light incident time, the phase delay of the diffraction light wave of TE and TM polarization of the present invention is with the change curve of lambda1-wavelength.
In figure, 1-silicon oxide film, 2-pellumina, 3-silverskin, 4-pellumina, 5-substrate, d-screen periods, b-grating ridge is wide, h r-etching depth, h c-articulamentum thickness.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment
A kind of is the broadband reflective wave plate of 1550 nano wavebands for centre wavelength, its structure as shown in Figure 1, plate pellumina 4 on substrate 5 successively, be greater than pellumina 2 (articulamentum), the silicon oxide film 1 of silverskin 3,61 nanometer of 100 nanometers, membranous layer of silicon oxide 1 etches rectangular-groove grating.Screen periods d is 1178 ~ 1188 nanometers, and the scope of the wide b of grating ridge can be determined according to screen periods and dutycycle, and between 300 ~ 303 nanometers, the present embodiment median ridge is wide is 301.5 nanometers, etching depth h rbe 2517 ~ 2527 nanometers, dutycycle is 0.255, articulamentum thickness h cbe 61 nanometers.
Table 1 gives the present invention a series of embodiments be suitable for, wherein: d is screen periods, h rfor the etching depth of grating, λ is incident wavelength, η tEfor 0 order diffraction efficiency during polarized wave incidence, η tMfor 0 order diffraction efficiency during polarized wave incidence, Δ φ is the phase differential of TE and TM polarizing diffraction light.
As shown in Table 1, be 1178 ~ 1188 nanometers when the cycle of grating, etching depth is 2517 ~ 2527 nanometers, when lambda1-wavelength is 1470 ~ 1630 nanometer, broadband reflective wave plate of the present invention all can realize diffraction efficiency higher than 96% to TE and TM polarized wave, and the difference between TE and TM polarizing diffraction ripple is between 88.5 ° ~ 91.5 °.
Broadband reflective wave plate of the present invention, there is the advantage that structure is simple, efficiency is high, phase delay deviation is little, electron-beam direct writing device, in conjunction with microelectronics deep etching process, can be produced in enormous quantities, at low cost, can be applicable to high-power polarization laser polarization control system.
Efficiency and phase differential when table 1 TE and TM polarized light vertical incidence
When Fig. 2 is the incidence of TE or TM polarized light, 0 order diffraction efficiency of the present invention is with the change curve of lambda1-wavelength, can find out, TE and TM polarized light is incident, the present invention can realize compared with efficiency diffraction by 0 order diffraction light in a wider wavelength coverage, and the diffraction efficiency of two kinds of polarized lights is relevant less; When Fig. 3 is the incidence of TE or TM polarized light, the phase delay of the diffraction light wave of TE and TM polarization of the present invention is with the change curve of lambda1-wavelength, can find out, when incident light wave length is between 1470 ~ 1630 nanometers, the present invention is for the phase delay between T E and T M polarizing diffraction light between 89 ° ~ 91 °, and namely the present invention can realize the function of quarter wave plate well.

Claims (6)

1. a broadband reflective quarter wave plate, comprise substrate (5), it is characterized in that, in substrate (5), pellumina (4), silverskin (3), pellumina (2) and silicon oxide film (1) are established in plating successively
In described silicon oxide layer (1), etching forms rectangular-groove grating, and the cycle of this grating is 1178 ~ 1188 nanometers, and etching depth is 2517 ~ 2527 nanometers, and dutycycle is 0.255.
2. a kind of broadband reflective quarter wave plate according to claim 1, is characterized in that, the cycle of described rectangular-groove grating is 1183 nanometers, and etching depth is 2522 nanometers.
3. a kind of broadband reflective quarter wave plate according to claim 1, is characterized in that, the ridge of described rectangular-groove grating is wide is 300 ~ 303 nanometers.
4. a kind of broadband reflective quarter wave plate according to claim 3, is characterized in that, wide preferably 301.5 nanometers of ridge of described rectangular-groove grating.
5. a kind of broadband reflective quarter wave plate according to claim 1, is characterized in that, described pellumina (2) is articulamentum, and thickness is 56 ~ 66 nanometers.
6. a kind of broadband reflective quarter wave plate according to claim 5, is characterized in that, thickness preferably 61 nanometers of described pellumina (2).
CN201410663285.7A 2014-11-19 2014-11-19 Reflective broadband 1/4 wave plate Pending CN104330847A (en)

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Publication number Priority date Publication date Assignee Title
CN108475895A (en) * 2016-01-18 2018-08-31 三菱电机株式会社 Power-balance device, laser processing device for laser
CN108603978A (en) * 2015-12-09 2018-09-28 菲尼萨公司 Polarize unrelated multiplexer/demultiplexer
CN111257982A (en) * 2020-01-20 2020-06-09 江苏师范大学 Monocrystalline silicon grating guided-mode resonance filter
CN113495310A (en) * 2020-03-18 2021-10-12 吉林求是光谱数据科技有限公司 Light filtering film system based on double glass hole array, near infrared spectrum chip and preparation method thereof
JP7442082B2 (en) 2019-02-08 2024-03-04 学校法人法政大学 optical mirror

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108603978A (en) * 2015-12-09 2018-09-28 菲尼萨公司 Polarize unrelated multiplexer/demultiplexer
CN108603978B (en) * 2015-12-09 2021-09-21 菲尼萨公司 Polarization independent multiplexer/demultiplexer
CN108475895A (en) * 2016-01-18 2018-08-31 三菱电机株式会社 Power-balance device, laser processing device for laser
CN108475895B (en) * 2016-01-18 2021-07-02 三菱电机株式会社 Power balancing device for laser and laser processing device
JP7442082B2 (en) 2019-02-08 2024-03-04 学校法人法政大学 optical mirror
CN111257982A (en) * 2020-01-20 2020-06-09 江苏师范大学 Monocrystalline silicon grating guided-mode resonance filter
CN113495310A (en) * 2020-03-18 2021-10-12 吉林求是光谱数据科技有限公司 Light filtering film system based on double glass hole array, near infrared spectrum chip and preparation method thereof

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