CN103308486A - Surface-plasma-based infrared photon absorption device of composite resonator - Google Patents
Surface-plasma-based infrared photon absorption device of composite resonator Download PDFInfo
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- CN103308486A CN103308486A CN2013101947771A CN201310194777A CN103308486A CN 103308486 A CN103308486 A CN 103308486A CN 2013101947771 A CN2013101947771 A CN 2013101947771A CN 201310194777 A CN201310194777 A CN 201310194777A CN 103308486 A CN103308486 A CN 103308486A
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Abstract
The invention discloses a surface-plasma-based infrared photon absorption device of a composite resonator, belongs to the technical field of infrared photon absorption, and solves the technical problems of small absorptivity and narrow work wavebands of the infrared photon absorption device at an infrared waveband in the prior art. The infrared photon absorption device disclosed by the invention comprises a reflecting layer, a medium layer, and a metal layer, wherein the medium layer is formed on the reflecting layer; the metal layer is formed on the medium layer; the metal layer is formed by microstructures which are arranged periodically; the dimensions and the cycles of the microstructures are in sub-wavelength scales. The average absorbance of the infrared photon absorption device of the composite resonator, disclosed by the invention, on incident light can be up to 95%; the infrared photon absorption device can work within a relatively wide waveband.
Description
Technical field
The present invention relates to a kind of composite resonant cavity infrared photon based on surface plasma and absorb device, belong to infrared photon and absorb the field.
Background technology
Non-refrigeration rpyroelectric infrared detection system is widely used in the fields such as night vision goggles, warning system, Medical imaging systems and traffic camera system.Pyroelectric infrared detector is the core of non-refrigeration rpyroelectric infrared detection system, have lightweight, volume is little, detecting band is wide and many advantages such as non-refrigeration.The performance of pyroelectric infrared detector is mainly characterized by response speed and susceptibility, if think pyroelectric infrared detector infrared light is had higher absorptivity, and just requiring detector to have in the broadband scope has better susceptibility to infrared light.
In the prior art, infrared photon absorbs – Perot cavity structure in many employings of device method cloth, namely be followed successively by from top to bottom reflection horizon---dielectric layer---metal level, the reflection horizon is for there being the metallic film of high reflectance at infrared band, dielectric layer is the film that dielectric substance consists of, metal level is metallic film, but the infrared photon of this structure absorb device in the average absorption rate of infrared band less than 80%, service band is narrower, along with the development of non-refrigeration rpyroelectric infrared detection system, existing pyroelectric infrared detector can not satisfy the requirement of infrared detection system.
Summary of the invention
The objective of the invention is to solve prior art mid-infrared light absorption device little in the infrared waveband absorbing rate, the technical matters that service band is narrower provides a kind of composite resonant cavity infrared photon based on surface plasma to absorb device.
Composite resonant cavity infrared photon based on surface plasma of the present invention absorbs device, comprising:
The reflection horizon;
The dielectric layer that forms in described reflection horizon;
At the metal level that described dielectric layer forms, described metal level is comprised of the microstructure of periodic arrangement, and the size of microstructure and cycle all are the sub-wavelength magnitudes.
Beneficial effect of the present invention:
Infrared photon of the present invention absorbs device and adopts reflection horizon---dielectric layer---metal-layer structure, the reflective layer reflects infrared light, dielectric layer makes the infrared light horizontal transmission, the microstructure of the sub-wavelength level on the metal level is when infrared light incident, energy excitating surface plasma ripple, light is propagated along layer on surface of metal, strengthen infrared photon and absorbed device to the absorptivity of incident light, the average absorption rate is up to 95%, and in wider wave band, can evoke the surface plasma resonance effect, and then realize the infrared Optical Absorption on the broadband.
Description of drawings
Fig. 1 is the structural representation that the present invention is based on the composite resonant cavity infrared photon absorption device of surface plasma;
Fig. 2 is the metal level microstructure floor map that the present invention is based on the composite resonant cavity infrared photon absorption device of surface plasma;
Fig. 3 is the making process flow diagram that the present invention is based on the composite resonant cavity infrared photon absorption device of surface plasma;
Fig. 4 is the making process flow diagram that the present invention is based on the composite resonant cavity infrared photon absorption device of surface plasma;
Absorb two kinds of periodic arrangement modes of the metal level column type microstructure of device among Fig. 5 for the composite resonant cavity infrared photon that the present invention is based on surface plasma.
Among the figure: 1, substrate, 2, the reflection horizon, 3, dielectric layer, 4, metal level, 5, photoresist.
Embodiment
Below in conjunction with accompanying drawing the present invention is described in further details.
As shown in Figure 1, the composite resonant cavity infrared photon based on surface plasma of the present invention absorbs device and is comprised of the trilamellar membrane that is positioned in the substrate 1, is successively from the bottom up: reflection horizon 2, dielectric layer 3 and metal level 4; The thickness in reflection horizon 2 is more than 100nm, the thickness in reflection horizon 2 increases not obvious greater than its reflecting effect of 100nm, but cost of manufacture is higher, consider its effect and cost, preferred thickness is at 100nm, the material in reflection horizon 2 is for the metallic film of high reflectance is arranged at infrared band, and such as gold, silver or aluminium, reflection horizon 2 adopts Vacuum Coating method to be grown in the substrate 1; The thickness of dielectric layer 3 is decided according to the wave band that infrared photon absorbs device application, be generally 1/4th optical wavelengths, the material of dielectric layer 3 is dielectric substance known in this field, such as polyimide or silicon dioxide, the film plating process of dielectric layer 3 is different according to the difference of the selection of material, if adopt the liquid medium of polyimide, can adopt the spin coating method to be coated on the reflection horizon 2, if adopt the solid dielectrics such as silicon dioxide, then adopt Vacuum Coating method to be plated on the reflection horizon 2; The thickness of metal level 4 can arrive the hundreds of nanometer for several nanometers according to specific design, is generally 10～50nm, and material such as gold, silver, aluminium or nickel chromium, metal level 4 can adopt Vacuum Coating method to be plated on the dielectric layer 3.
The material of substrate is techniques well known, decides according to the surfacing of optical device, for example, is used on the infrared eye, and substrate can be ferroelectric material.
As shown in Figure 2 (D that marks among the figure and T represent respectively size and the cycle of microstructure), the microstructure that periodic arrangement is arranged on the metal level 4, the shape of microstructure does not have fixed constraints, as long as satisfying the microstructure cycle arranges, and size and cycle all are that the sub-wavelength magnitude is just passable, determine its optimal shape according to the wave band that the photonic absorption device is used, be generally circular hole, cylinder, square hole or square column, the making of microstructure can adopt photoetching technique and ion beam etching technology to finish; The mode of described periodic arrangement is unfixing, in the cylindrical arrangement mode as example, and two kinds of periodic arrangement modes that may adopt for the column type microstructure among Fig. 5 (two kinds of arrangement modes are respectively Fig. 5 a) and Fig. 5 b)).
Such as Fig. 3, the composite resonant cavity infrared photon that the present invention is based on surface plasma absorbs the method for making of device, may further comprise the steps:
(1) adopt Vacuum Coating method in substrate 1 preparation reflection horizon 2, the material in reflection horizon 2 is at the high gold, silver of infrared band reflectivity, aluminium etc.;
(2) adopt rotary process or Vacuum Coating method 2 to be coated with dielectric layer 3 in the reflection horizon, the material of dielectric layer 3 is dielectric substance, as being solid-state silicon dioxide under polyimide liquid under the normal temperature or the normal temperature;
(3) adopt the method for vacuum coating to be coated with metal level 4 at dielectric layer 3; be coated with one deck photoresist 5 at metal level 4; then template is placed on the photoresist 5; to photoresist 5 exposures and development; etch away the metal level 4 of not protected by photoresist 5 with ibl; with chemical reagent photoresist 5 is removed, obtained absorbing device based on the composite resonant cavity infrared photon of surface plasma, the material of metal level 4 is gold, silver, aluminium or nickel chromium etc.
Such as Fig. 4, the composite resonant cavity infrared photon that the present invention is based on surface plasma absorbs the method for making of device, may further comprise the steps:
(1) adopt Vacuum Coating method in substrate 1 preparation reflection horizon 2, the material in reflection horizon 2 is at the high gold, silver of infrared band reflectivity, aluminium etc.;
(2) adopt rotary process or Vacuum Coating method to be coated with dielectric layer 3 on reflection horizon 2, the material of dielectric layer 3 is dielectric substance, as being solid-state silicon dioxide under polyimide liquid under the normal temperature or the normal temperature;
(3) be coated with one deck photoresist 5 at dielectric layer 3; then template is placed on the photoresist 5; to photoresist 5 exposures and development; the method of employing vacuum coating is at photoresist 5 and do not have the dielectric layer 3 of photoresist 5 protections to be coated with metal level 4; (photoresist 5 and metal level 4 are not orders of magnitude photoresist 5 removals with chemical reagent; photoresist 5 is thicker; metal level 4 is very thin; so the metal level 4 on the photoresist 5 separates with metal level 4 on the dielectric layer 3 that does not have photoresist 5 protection; during chemical reagent corrosion photoresist 5; on the photoresist 5 with metal level 4 also can remove with photoresist 5; only stay the metal level 4 on the dielectric layer 3; obtain absorbing device based on the composite resonant cavity infrared photon of surface plasma, the material of metal level 4 is gold; silver; aluminium or nickel chromium etc.
Claims (10)
1. the composite resonant cavity infrared photon based on surface plasma absorbs device, comprising:
The reflection horizon;
The dielectric layer that forms in described reflection horizon;
The metal level that forms at described dielectric layer;
It is characterized in that, described metal level is comprised of the microstructure of periodic arrangement, and the size of microstructure and cycle all are the sub-wavelength magnitudes.
2. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, the material in described reflection horizon is gold, silver or aluminium.
3. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, the thickness in described reflection horizon is more than 100nm.
4. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, the material of described dielectric layer is polyimide or silicon dioxide.
5. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, the thickness of described dielectric layer is decided according to the wave band that infrared photon absorbs device application.
6. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, the material of described metal level is gold, silver, aluminium or nickel chromium.
7. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, the thickness of described metal level is 10～50nm.
8. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, described microstructure be shaped as circular hole, cylinder, square hole or square column.
9. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, described reflection horizon and metal level adopt vacuum vapour deposition to be coated with.
10. the composite resonant cavity infrared photon based on surface plasma according to claim 1 absorbs device, it is characterized in that, described dielectric layer is to adopt vacuum vapour deposition or spin-coating method preparation.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913788A (en) * | 2013-11-20 | 2014-07-09 | 电子科技大学 | Middle-infrared band broadband cycle wave-absorbing material |
| CN104614077A (en) * | 2015-02-05 | 2015-05-13 | 电子科技大学 | Optical window with high terahertz wave transmission rate and low infrared light transmission rate |
| CN105004430A (en) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | Uncooled infrared focal plane detector photoelectric sensitive unit |
| CN105070728A (en) * | 2015-08-21 | 2015-11-18 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and transparent display device |
| KR101624489B1 (en) | 2015-06-15 | 2016-05-26 | 한국표준과학연구원 | IR Photo-detector using a metamaterial based on an antireflection coating to match the impedance between air and SP resonator |
| CN105810704A (en) * | 2016-03-15 | 2016-07-27 | 华中科技大学 | Broad-spectrum imaging detection chip |
| CN106019431A (en) * | 2016-07-08 | 2016-10-12 | 陕西师范大学 | Structure and preparation method of a spatial arbitrarily curved beam generator |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN107111011A (en) * | 2017-03-29 | 2017-08-29 | 香港中文大学（深圳） | Perfect absorber |
| CN107275421A (en) * | 2017-06-07 | 2017-10-20 | 华中科技大学 | A kind of quantum dot light electric explorer and preparation method thereof |
| CN107329285A (en) * | 2017-07-21 | 2017-11-07 | 江西师范大学 | Near-infrared absorption device based on ITO metal semiconductor structures |
| CN107732017A (en) * | 2017-10-10 | 2018-02-23 | 北京大学 | A kind of phasmon structured substrate and its preparation and application |
| CN106206867B (en) * | 2016-07-21 | 2018-10-19 | 中北大学 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
| CN112698433A (en) * | 2020-12-28 | 2021-04-23 | 中国科学院微电子研究所 | Metamaterial infrared absorber and manufacturing method thereof |
| CN114265134A (en) * | 2022-01-24 | 2022-04-01 | 南京航空航天大学 | Electromagnetic wave broadband selective absorption micro-nano structure and preparation method thereof |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913788B (en) * | 2013-11-20 | 2016-08-17 | 电子科技大学 | Middle-infrared band broadband cycle absorbing material |
| CN103913788A (en) * | 2013-11-20 | 2014-07-09 | 电子科技大学 | Middle-infrared band broadband cycle wave-absorbing material |
| CN104614077A (en) * | 2015-02-05 | 2015-05-13 | 电子科技大学 | Optical window with high terahertz wave transmission rate and low infrared light transmission rate |
| KR101624489B1 (en) | 2015-06-15 | 2016-05-26 | 한국표준과학연구원 | IR Photo-detector using a metamaterial based on an antireflection coating to match the impedance between air and SP resonator |
| CN105004430A (en) * | 2015-07-28 | 2015-10-28 | 昆明物理研究所 | Uncooled infrared focal plane detector photoelectric sensitive unit |
| CN105004430B (en) * | 2015-07-28 | 2019-12-06 | 昆明物理研究所 | Photoelectric sensitive unit of uncooled infrared focal plane detector |
| CN105070728A (en) * | 2015-08-21 | 2015-11-18 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and transparent display device |
| CN105810704B (en) * | 2016-03-15 | 2018-06-12 | 华中科技大学 | A kind of wide spectrum imaging detection chip |
| CN105810704A (en) * | 2016-03-15 | 2016-07-27 | 华中科技大学 | Broad-spectrum imaging detection chip |
| CN106019431B (en) * | 2016-07-08 | 2019-06-07 | 陕西师范大学 | A kind of structure and preparation method of any bent beam generator in space |
| CN106019431A (en) * | 2016-07-08 | 2016-10-12 | 陕西师范大学 | Structure and preparation method of a spatial arbitrarily curved beam generator |
| CN106206867B (en) * | 2016-07-21 | 2018-10-19 | 中北大学 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
| CN107111011A (en) * | 2017-03-29 | 2017-08-29 | 香港中文大学（深圳） | Perfect absorber |
| CN106950631A (en) * | 2017-05-09 | 2017-07-14 | 华中科技大学 | A kind of infrared wave-absorbing body and preparation method based on medium micro-pillar array |
| CN107275421A (en) * | 2017-06-07 | 2017-10-20 | 华中科技大学 | A kind of quantum dot light electric explorer and preparation method thereof |
| CN107329285A (en) * | 2017-07-21 | 2017-11-07 | 江西师范大学 | Near-infrared absorption device based on ITO metal semiconductor structures |
| CN107732017A (en) * | 2017-10-10 | 2018-02-23 | 北京大学 | A kind of phasmon structured substrate and its preparation and application |
| CN112698433A (en) * | 2020-12-28 | 2021-04-23 | 中国科学院微电子研究所 | Metamaterial infrared absorber and manufacturing method thereof |
| CN112698433B (en) * | 2020-12-28 | 2023-06-23 | 中国科学院微电子研究所 | Super-material infrared absorber and manufacturing method thereof |
| CN114265134A (en) * | 2022-01-24 | 2022-04-01 | 南京航空航天大学 | Electromagnetic wave broadband selective absorption micro-nano structure and preparation method thereof |
| CN114265134B (en) * | 2022-01-24 | 2024-03-15 | 南京航空航天大学 | Electromagnetic wave broadband selective absorption micro-nano structure and preparation method thereof |
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Application publication date: 20130918 |