CN107329285A - Near-infrared absorption device based on ITO metal semiconductor structures - Google Patents
Near-infrared absorption device based on ITO metal semiconductor structures Download PDFInfo
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- CN107329285A CN107329285A CN201710598738.6A CN201710598738A CN107329285A CN 107329285 A CN107329285 A CN 107329285A CN 201710598738 A CN201710598738 A CN 201710598738A CN 107329285 A CN107329285 A CN 107329285A
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- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 claims description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 abstract description 34
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 abstract description 7
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses the near-infrared absorption device based on ITO metal semiconductor structures, belong to field of photovoltaic materials.The absorber is made up of substrate, metallic diaphragm, semiconductor structure layer and ito film layer successively from bottom to top, and the semiconductor structure layer is made up of semiconductor grain array and semiconductor film.Effective incident and into semi-conducting material and with ITO film layers the high conductance property of light energy in itself is realized by introducing ITO (tin indium oxide) transparent material, the semiconductor photoelectric device of good conductance property and good optical absorption characteristics is realized.The characteristics of this absorber based on semiconductor structure has simple in construction, near infrared band absorption and broadband absorption.The semi-conducting material used in this external structure is easy to expand application and development of such absorber in the field such as the generation of Photoelectric Detection, opto-electronic conversion, light induced electron and thermoelectron and collection and electromagnetic energy absorption.
Description
Technical field
The present invention relates to the fields such as photoelectric material and photonic propulsion, and in particular to one kind is based on ITO- metal-semiconductor structures
Near-infrared absorption device.
Background technology
Infrared band in electromagnetic spectrum can be divided into near-infrared (0.76 μm~2.5 μm), in infrared (2.5 μm~25 μm)
With three wave bands of far infrared (25 μm~1000 μm).Near infrared spectrum and hydric group (N-H, O-H, C-H) in organic molecule
The sum of fundamental frequencies of vibration is consistent with the uptake zone of frequencys multiplication at different levels, by the near infrared spectrum of test sample, can obtain molecule in sample
Characteristic information, and using spectral technique carry out sample analysis have quickly, conveniently, efficiently, accurately, chemical examination is not consumed
Agent, it is free from environmental pollution and the advantages of do not destroy sample.
Near infrared band light absorption effect has very in fields such as photodetection, opto-electronic conversion and semiconductor photosensitive elements
Wide application.The operation principle that these photoelectric devices are often based upon is photoelectric effect, i.e., under the irradiation of light, inside material
Electrons are come out by photon excitation and form electric current, i.e. light induced electron or photo-generated carrier.Photodetector and other photoelectricity turn
Change and semiconductor photosensitive element has extensive use in military, civilian and other national economy every field.Semiconductor light
Quick element is mainly based upon the photoelectric conversion sensor of photoresistance.Contactless, long distance can be realized using light, power technology
From, quickly and precisely measure, therefore semiconductor photosensitive element be widely used in accurate measurement, optic communication, shooting, night vision, remote sensing,
In guidance and other measurements and control device.And in the application and exploitation of these photoelectric functional devices, how effectively to be lifted
The efficiency of light absorption of semi-conducting material, and then photoelectric respone effect is lifted, it is the important bottleneck of break-through skill development.Therefore, tie
Closing the perfect Absorption Study of semi-conducting material progress light has very important realistic meaning.
Electromagnetic wave perfection absorber was proposed and in microwave by the Landy seminars of boston, U.S.A institute in 2008 at first
Wave band verified (《Physical Review Letters》Volume 100, page 207402 (2008)).In the structure, pass through
Electromagentic resonance phenomenon realizes structure and had not both reflected (reflectivity is close to 0) in resonance wave strong point or do not transmitted (transmissivity
For 0), so that can be with according to the definition for absorbing A=1-R-T (wherein A represents absorptivity, and R represents reflectivity, and T represents transmissivity)
The rate that is absorbed A absorbs close to 100% perfection.But such a structure can only absorb the electromagnetic wave of single resonant wavelength；And it is middle
Dielectric insulation film layer is dielectric materials, not photoelectric functional material such as semi-conducting material etc..
Near infrared band light perfection absorber can as opto-electronic conversion and detector, the construction unit of heat emitters, or
As coating material to reduce the spurious emissions of electromagnetic wave, but the perfect absorber of current near infrared light often inhale by only one of which
Receive frequency band.However, in technical fields such as near-infrared wave filter, photodetector, biological molecules and ion detection with chemistry
Application in, it is desirable to absorber has the characteristic of near-infrared broadband light absorbs.Currently, often through the various sizes of knot of use
The structural system for the multiple resonance unit that structure cell array or structure are made up of the subunit of multiple different sizes, then
Resonant frequency based on each size array or each self-supporting of dimension cells, so as to be superimposed the light of different resonant frequencies on frequency spectrum
Absorb, realize the broadband light absorbs of near-infrared.But the structure design of the perfect absorber of these light is extremely complex and light absorbs
The repeatability of response is poor.
In addition, the perfect absorber of almost all of light includes all being free of semiconductor material in the structure of near infrared band absorber
Material, such as, the perfect absorber of the light of different absorption bandses (《Laser Photonics Reviews》, volume 8, page 495
(2014)), the medium in its structure is all the insulating materials such as common magnesium fluoride, silica and oxidized metal.And to have
Realize to effect photo-generated carrier and other photoelectric respones, semi-conducting material and the perfect absorber of light based on semi-conducting material
It is indispensable, it may be said that the perfect absorber of the light based on semi-conducting material is to realize electromagnetic wave absorber in infrared electro
Detect device, optoelectronic function device, photoelectric material and the necessary condition for the field application such as photoelectricity is integrated.Therefore, we are badly in need of
A kind of perfect absorber of the light based on semi-conducting material.And how to realize the light absorption effect of semi-conducting material and led in photoelectric device
The application in domain, generally require to build up-down structure layer possess conducting function and have one side be printing opacity just can be with.At present, Ji Husuo
The design and application for being related to the perfect absorbing material of semiconductor light and structure are all not involved with absorption device and its in potential light
Electricity Functional device application.Therefore, the light absorption effect and semi-conducting material and electrically conducting transparent near infrared band how to be taken into account
The Multiple factors such as film layer structure, so as to realize that the light absorber with photoelectric respone and photo work technical ability is Contemporary semiconductor
Material and field of photoelectric devices institute urgent problem.
The content of the invention
For the deficiency of the perfect absorber of above-mentioned light, present invention offer is a kind of to be operated in the golden based on ITO- of near infrared band
The near-infrared absorption device of category-semiconductor structure, it is intended to introduce semi-conducting material, utilize semi-conductor electricity magnetic resonance characteristics, letter
Change the structure of absorptive unit and the bandwidth of increase absorption spectrum, light energy is realized by introducing ITO (tin indium oxide) transparent material
It is effective it is incident enter semi-conducting material and the high conductance property with ITO film layers in itself, realize good conductance property
With the semiconductor photoelectric device of optical absorption characteristics.
The purpose of the present invention is achieved by the following technical solution：
Based on the near-infrared absorption device of ITO- metal-semiconductor structures, it includes substrate, metallic diaphragm, semiconductor
Structure sheaf and ito film layer, the semiconductor structure layer are made up of semiconductor grain array and semiconductor film；The metal film
The structure of layer, semiconductor structure layer formation with the perfect absorption characteristic of near infrared light, by the geometric parameters for adjusting semiconductor structure
In the cycle of number and elementary cell, regulate and control optical absorption characteristics.
The cyclic array pattern of the semiconductor grain composition is arranged on semiconductor film upper surface.
The material of the semiconductor structure layer is one kind in GaAs, silicon, indium phosphide, indium arsenide.
The material of the metallic diaphragm is aluminium or iron.
The structure of the semiconductor grain is cylindrical structural.
The semiconductor film thickness is in 20nm~50nm scopes.
The ito film thickness degree is in 20nm~70nm scopes.
The material of the substrate is silicon chip, glass or the flexible material (material such as such as dimethyl silicone polymer and polymer
Material).
The cycle of the absorber semiconductor grain array lattice is 300nm~700nm.
The pattern form size of the semiconductor grain is identical, and the size of semiconductor grain is including diameter range
200nm~600nm, thickness range are 20nm~100nm.
The absorber structure can include ion sputtering process and magnetron sputtering method and lithographic technique by physical deposition methods
Prepared including laser etching techniques etc..
The perfect absorber of the near infrared light of the present invention has the following advantages that：
1st, the semiconductor structure by using semiconductor grain array and semiconductor film composition is complete as near infrared light
U.S. absorbed layer, effectively prevent based on metallic particles build in the metal that the perfect absorber of light can not overcome ohmic loss with
And the bad interference of fuel factor etc. is shaken in metal free electron collective.
2nd, by using semiconductor grain in itself and semiconductor film can provide different resonance modes, so as to realize
Different-waveband produces resonance light absorbs, realizes that the light perfection of near-infrared absorbs.
3rd, relative to the perfect absorber of existing light, the perfect absorption peak spectral region of light of the invention occurs in near-infrared
Wave band；
4th, it is simple in construction, it is easy to prepare, the utilization of semi-conducting material, it is easy to carry out the system integration with other photoelectric devices；
5th, semiconductor grain resonating member and semiconductor film based on single size, the light perfection for producing near-infrared are inhaled
Characteristic is received, is all with a wide range of applications in fields such as infrared acquisition, opto-electronic conversion, infrared imaging and heat radiators；
6th, the semiconductor structure constituted by using semiconductor grain array and semiconductor film is common as near infrared light
Shake absorbed layer, be conducive to using in semi-conducting material photoelectric characteristic carry out near-infrared opto-electronic conversion, Photoelectric Detection and photoproduction
Application in terms of electronics.
7th, by using ito film layer covering semiconductor structure layer, it is possible to achieve good light is transparent, the double response of conductance,
So as to provide good additional circuit and electric field interface channel for processes such as the light absorbs in light absorption device and opto-electronic conversions,
For carry out electricity regulation and control include the functions such as automatically controlled photoelectric response characteristic and nonlinear optical electrical effect based on semi-conducting material with
Device application provides good operating platform.
Brief description of the drawings
Present disclosure is further described below in conjunction with the accompanying drawings.But, the following drawings is only the ideal of the present invention
Change the schematic diagram of embodiment, wherein the structure in order to clearly show device involved by the present invention, to wherein selected semiconductor junction
The thickness in structure layer region has carried out appropriate amplification, but it should not be considered as strictly reflecting the ratio of physical dimension as schematic diagram
Example relation.In addition, the embodiment shown in the present invention also should not be considered limited to the given shape in the region shown in figure.Generally
Yan Zhi, the following drawings is schematical, be should not be considered as limiting the scope of the invention.
Fig. 1 is the structural representation of the near-infrared absorption device based on ITO- metal-semiconductor structures in the present invention.
Fig. 2 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 40nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
100nm, GaAs thicknesses of layers is 30nm.GaAs particle diameter is 580nm, and thickness is 30nm, GaAs array of particles week
Phase size is 700nm.
Fig. 3 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 40nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
100nm, GaAs thicknesses of layers is 30nm.GaAs particle diameter is 480nm, and thickness is 30nm, GaAs array of particles week
Phase size is 600nm.
Fig. 4 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
100nm, GaAs thicknesses of layers is 30nm.GaAs particle diameter is 600nm, and thickness is 30nm, GaAs array of particles week
Phase size is 800nm.
Fig. 5 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
100nm, GaAs thicknesses of layers is 30nm.GaAs particle diameter is 240nm, and thickness is 30nm, GaAs array of particles week
Phase size is 360nm.
Fig. 6 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
100nm, GaAs thicknesses of layers is 20nm.GaAs particle diameter is 380nm, and thickness is 30nm, GaAs array of particles week
Phase size is 500nm.
Fig. 7 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
100nm, GaAs thicknesses of layers is 30nm.GaAs particle diameter is 380nm, and thickness is 30nm, GaAs array of particles week
Phase size is 500nm.
Fig. 8 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 60nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
50nm, GaAs thicknesses of layers is 20nm.GaAs particle diameter is 380nm, and thickness is 30nm, GaAs array of particles cycle
Size is 500nm.
Fig. 9 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 60nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is
200nm, GaAs thicknesses of layers is 30nm.GaAs particle diameter is 380nm, and thickness is 50nm, GaAs array of particles week
Phase size is 500nm.
Figure 10 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is indium arsenide, and aluminum membranous layer thickness is
100nm, indium arsenide thicknesses of layers is 30nm.Indium arsenide particle diameter is 500nm, and thickness is 30nm, indium arsenide array of particles week
Phase size is 600nm.
Figure 11 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is iron, and semi-conducting material is silicon, and iron thicknesses of layers is 100nm, silicon
Thicknesses of layers is 30nm.The a diameter of 440nm of silicon grain, thickness is 30nm, and silicon grain array period size is 600nm.
Figure 12 is the near-infrared absorption device based on ITO- metal-semiconductor structures in an optional embodiment of the invention
Light absorbs figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is indium phosphide, and aluminum membranous layer thickness is
100nm, indium phosphide thicknesses of layers is 30nm.Indium phosphide particle diameter is 500nm, and thickness is 50nm, indium phosphide array of particles week
Phase size is 600nm.
Marked in figure：1st, ito film layer, 2, semiconductor grain, 3, semiconductor film, 4, metallic diaphragm, 5, substrate.
Embodiment
Technical scheme is described further with reference to embodiment, but is not limited thereto, it is every to this
Inventive technique scheme is modified or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention, all should be covered
In protection scope of the present invention.
As shown in figure 1, a kind of near-infrared absorption device based on ITO- metal-semiconductor structures, from bottom to top successively
Substrate 5, metallic diaphragm 4, semiconductor film 3 and semiconductor grain 2, ito film layer 1, the semiconductor film 3 and semiconductor are set
Particle 2 constitutes semiconductor structure layer, and the array of semiconductor grain 2 is in semiconductor film 3, and semiconductor grain 2 is cylindrical structural,
Array arranges to be square；The metallic diaphragm 4, semiconductor film 3 and semiconductor grain 2 cooperatively form perfect near infrared light
The structure of absorption characteristic, by adjusting the geometric parameter of semiconductor structure and the cycle of elementary cell, regulation and control near infrared band is near
Infrared light perfection absorption spectrum scope.
Aforesaid substrate 5 can select but be not limited to the flexible liners such as the hard such as silicon chip, glass, stainless steel, or plastics, polymer
Bottom, for supporting the perfect absorber of the near infrared light based on metallic diaphragm-semiconductor structure layer.
Aforementioned metal film layer 4 can be using one layer of continuous metallic film, and its thickness is preferably in more than 50nm, especially
50nm~200nm.
As one of preferred embodiment, aforesaid semiconductor particle 2 is arranged and constituted by cylindrical semiconductive resonating member
Periodic micro nano structure.
Aforesaid semiconductor structure sheaf and metallic diaphragm constitute the structure absorbed near infrared light perfection together.Further
, by regulating and controlling the geometric parameter of aforesaid semiconductor structure sheaf, the composite construction of metallic diaphragm and semiconductor structure layer, array
Lattice period, can be operated in the perfect absorber structure of light of different-waveband with optimization design.For example, being used as preferably application scheme
One of, can by Numerical Aanlysis Methods of Electromagnetic Field optimize absorber structure in semiconductor grain size and array
Cycle parameter so that optical resonance spectrum and the incident light spectrum that semiconductor grain array is produced are overlapping on frequency domain so that
Strong resonance coupling is obtained, suppresses reflection loss, nearly 100% light perfection is obtained and absorbs.
Technical scheme is described in detail with reference to some preferred embodiments and relevant drawings：
Embodiment 1
Refering to Fig. 2, the light of near-infrared absorption device of Fig. 2 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 40nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 100nm, arsenic
Gallium thicknesses of layers is 30nm.GaAs particle diameter is 580nm, and thickness is 30nm, and GaAs array of particles cycle size is
700nm.Can be drawn from figure, maximum absorbance has reached 99.4%, and spectral region from 705nm to 1107nm in absorption
Rate is above 65%, spectral region from 740nm to 980nm in absorptivity be above 80%, show in this metal-semiconductor junction
Structure generates a broadband light absorbs response.
Embodiment 2
Refering to Fig. 3, the light of near-infrared absorption device of Fig. 3 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 40nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 100nm, arsenic
Gallium thicknesses of layers is 30nm.GaAs particle diameter is 480nm, and thickness is 30nm, and GaAs array of particles cycle size is
600nm.The semiconductor film thickness it can be found that in by regulating and controlling absorber is gone up from figure, maximum absorbance has reached 99.7%,
And spectral region from 668nm to 1010nm in absorptivity be above 80%, show under this structural parameters, metal-semiconductor
Structure can also provide a light perfection and absorb response.
Embodiment 3
Refering to Fig. 4, the light of near-infrared absorption device of Fig. 4 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 100nm, arsenic
Gallium thicknesses of layers is 30nm.GaAs particle diameter is 600nm, and thickness is 30nm, and GaAs array of particles cycle size is
800nm.It is upper it can be found that by regulating and controlling semiconductor grain size and array period size from figure, spectral region from
Absorptivity in 682nm to 952nm is above 80%, shows under this structural parameters, and metal-semiconductor structure can also be provided
One light perfection absorbs response, in addition, maximum absorbance has reached 99.9%.
Embodiment 4
Refering to Fig. 5, the light of near-infrared absorption device of Fig. 5 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 100nm, arsenic
Gallium thicknesses of layers is 30nm.GaAs particle diameter is 240nm, and thickness is 30nm, and GaAs array of particles cycle size is
360nm.Semiconductor grain size and array period size it can be found that in by regulating and controlling absorber are gone up from figure, in light
Spectral limit from 638nm to 903nm in absorptivity be above 80%, show under this structural parameters, metal-semiconductor structure
A light perfection can be provided and absorb response, in addition, maximum absorbance has reached 99.6%.
Embodiment 5
Refering to Fig. 6, the light that it is near-infrared absorption device of the present embodiment based on ITO- metal-semiconductor structures that Fig. 6, which is,
Absorb figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 100nm, arsenic
It is 20nm to change gallium thicknesses of layers.GaAs particle diameter is 380nm, and thickness is 30nm, and GaAs array of particles cycle size is
500nm.The GaAs thicknesses of layers it can be found that in by regulating and controlling absorber, semiconductor grain size and array week are gone up from figure
Phase size, the absorptivity in spectral region is from 547nm to 899nm is above 80%, shows under this structural parameters, gold
Category-semiconductor structure can provide a light perfection near infrared band and absorb response, in addition, maximum absorbance reaches
99.2%.
Embodiment 6
Refering to Fig. 7, the light of near-infrared absorption device of Fig. 7 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 100nm, arsenic
Gallium thicknesses of layers is 30nm.GaAs particle diameter is 380nm, and thickness is 30nm, and GaAs array of particles cycle size is
500nm.Semiconductor grain size and array period size it can be found that in by regulating and controlling absorber are gone up from figure, in light
Spectral limit from 640nm to 969nm in absorptivity be above 80%, show under this structural parameters, metal-semiconductor structure exists
Near infrared band can provide a light perfection and absorb response, in addition, maximum absorbance has also reached 99.8%.
Embodiment 7
Refering to Fig. 8, the light of near-infrared absorption device of Fig. 8 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 60nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 50nm, arsenic
Gallium thicknesses of layers is 20nm.GaAs particle diameter is 380nm, and thickness is 30nm, and GaAs array of particles cycle size is
500nm.The GaAs thicknesses of layers it can be found that in by regulating and controlling absorber, granular size and array period size are gone up from figure
Size, the absorptivity in spectral region is from 637nm to 927nm is above 80%, and maximum absorbance has also reached 94.5%, table
It is bright under this structural parameters, metal-semiconductor structure can provide the response of light absorbs near infrared band.
Embodiment 8
Refering to Fig. 9, the light of near-infrared absorption device of Fig. 9 systems the present embodiment based on ITO- metal-semiconductor structures is inhaled
Receive figure.Ito film thickness degree is 60nm, and metal material is aluminium, and semi-conducting material is GaAs, and aluminum membranous layer thickness is 200nm, arsenic
Gallium thicknesses of layers is 30nm.GaAs particle diameter is 380nm, and thickness is 50nm, and GaAs array of particles cycle size is
500nm.Semiconductor grain size, thickness and array period size it can be found that in by regulating and controlling absorber are gone up from figure,
Absorptivity in spectral region is from 687nm to 937nm is above 80%, and maximum absorbance has also reached 98.7%, shows
Under this structural parameters, metal-semiconductor structure can also provide a perfect light absorbs response near infrared band.
Embodiment 9
Refering to Figure 10, the light of near-infrared absorption device of Figure 10 systems the present embodiment based on ITO- metal-semiconductor structures
Absorb figure.Ito film thickness degree is 50nm, and metal material is aluminium, and semi-conducting material is indium arsenide, and aluminum membranous layer thickness is 100nm, arsenic
It is 30nm to change indium thicknesses of layers.Indium arsenide particle diameter is 500nm, and thickness is 30nm, and indium arsenide array of particles cycle size is
600nm.Semiconductor grain size, thickness and array period size it can be found that in by regulating and controlling absorber are gone up from figure,
Absorptivity in spectral region is from 647nm to 1062nm is above 80%, and maximum absorbance has also reached 99.6%, shows
Under this structure and material parameter, metal-semiconductor structure can also provide a broadband perfect light near infrared band
Absorb response.
Embodiment 10
Refering to Figure 11, the light of near-infrared absorption device of Figure 11 systems the present embodiment based on ITO- metal-semiconductor structures
Absorb figure.Ito film thickness degree is 50nm, and metal material is iron, and semi-conducting material is silicon, and iron thicknesses of layers is 100nm, silicon film
Thickness is 30nm.The a diameter of 440nm of silicon grain, thickness is 30nm, and silicon grain array period size is 600nm.Can be with from figure
It was found that, by regulating and controlling the semiconductor grain size in absorber, thickness and array period size, near infrared spectral range
Absorptivity in from 730nm to 1302nm is above 80%, and maximum absorbance has also reached 98.2%, shows in this structure and material
Expect under parameter, metal-semiconductor structure can also provide a broadband perfect light absorbs response near infrared band.
Embodiment 11
Refering to Figure 12, the light of near-infrared absorption device of Figure 12 systems the present embodiment based on ITO- metal-semiconductor structures
Absorb figure.Ito film thickness degree is 50nm, and metal material is iron, and semi-conducting material is silicon, and iron thicknesses of layers is 100nm, silicon film
Thickness is 30nm.The a diameter of 440nm of silicon grain, thickness is 30nm, and silicon grain array period size is 600nm.Can be with from figure
It was found that, by regulating and controlling the semiconductor grain size in absorber, thickness and array period size, near infrared spectral range
Absorptivity in from 632nm to 986nm is above 80%, and maximum absorbance has also reached 99.9%, shows in this structure and material
Expect under parameter, metal-semiconductor structure can also provide a broadband perfect light absorbs response near infrared band.
Claims (11)
1. a kind of near-infrared absorption device based on ITO- metal-semiconductor structures, it includes substrate, metallic diaphragm, partly led
Body structure sheaf and ito film layer, the semiconductor structure layer are made up of semiconductor grain array and semiconductor film；The metal film
The structure of layer, semiconductor structure layer formation with the perfect absorption characteristic of near infrared light, by the geometric parameters for adjusting semiconductor structure
In the cycle of number and elementary cell, regulate and control optical absorption characteristics.
2. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The cyclic array pattern of the semiconductor grain composition is arranged on semiconductor film upper surface.
3. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The material of the semiconductor structure layer is one kind in GaAs, silicon, indium phosphide, indium arsenide.
4. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The material of the metallic diaphragm is aluminium or iron.
5. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The structure of the semiconductor grain is cylindrical structure.
6. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The semiconductor film thickness is in 20nm~50nm scopes.
7. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The material of the substrate is silicon chip, glass or flexible material.
8. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The semiconductor grain array is tetragonal lattice, and the cycle of array is 300nm~700nm.
9. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：The pattern form size of the semiconductor grain is identical, the size of semiconductor grain include diameter range be 200nm~
600nm, thickness range are 20nm~100nm.
10. the near-infrared absorption device according to claim 1 based on ITO- metal-semiconductor structures, its feature exists
In：Its thickness of the metallic diaphragm is more than or equal to 50nm.
11. the near-infrared absorption device according to claim 10 based on ITO- metal-semiconductor structures, its feature exists
In：Its thickness of the metallic diaphragm is 50nm~200nm.
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| US11561331B2 (en) | 2019-09-10 | 2023-01-24 | Samsung Electronics Co., Ltd. | Combination structures and optical filters and image sensors and camera modules and electronic devices |
| US11569284B2 (en) | 2019-09-03 | 2023-01-31 | Samsung Electronics Co., Ltd. | Combination structures and optical filters and image sensors and camera modules and electronic devices |
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