CN106206867B - The infra red radiation light source and production method of Sandwich-shaped superstructure - Google Patents
The infra red radiation light source and production method of Sandwich-shaped superstructure Download PDFInfo
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- CN106206867B CN106206867B CN201610576033.XA CN201610576033A CN106206867B CN 106206867 B CN106206867 B CN 106206867B CN 201610576033 A CN201610576033 A CN 201610576033A CN 106206867 B CN106206867 B CN 106206867B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention belongs to optical field and micro-nano system regions, the specially a kind of infra red radiation light source and production method of " sandwich " type metal superstructure.A kind of infra red radiation light source of " sandwich " type metal superstructure：Including ITO/IZO substrates, the pores array structural metal film layer in deposition on substrate, dielectric layer and the rectangular-shape metal array structure prepared on the dielectric layer.It can enhance surface phasmon MEMS infrared light supplies using pores array feature optical transmission enhancement effect extremely and the coupling of specific morphology micro-nano structure local surface plasmon resonance aerial radiation enhancement effect to radiate, while narrowing for the adjustment to phasmon MEMS infrared source working wave bands and line width may be implemented by adjusting the geometric parameter of metal array and dielectric layer structure.The metal array structure for surpassing surface based on metal involved in the present invention has good scalability, and manufacture craft is simple, easy to implement.
Description
Technical field
The invention belongs to optical fields and micro-nano system regions, and specially one kind " sandwich " type metal superstructure is infrared
Radiating light source and production method.
Background technology
Infra-red radiation has very important application in fields such as military affairs, medical treatment, accident search and rescue, remote sensing surveys, such as red
Outer fight mark can be effectively prevented from friendly troop in combined operation and accidentally injure；It is searching for in rescue action, infrared id signal can
To greatly improve the success rate of rescue and search, in addition infrared mark routing indicator, aircraft landing guide, ship piloting,
And the Infrared Wireless Communications application aspect such as recognition and tracking of military target has a good application prospect.MEMS is used at present
Technique prepare novel MEMS infra red radiation light sources have high electric light transformation efficiency, multiband spectrum output, it is small, work can
The advantages that leaning on and can be mass, still, it is not narrow enough that there is also line widths, wavelength selectivity is poor, it is long away from detecting limitation the defects of.
For current MEMS infra red radiation light sources line width it is big, filtering property is poor, grow away from detecting limitation the problems such as, the present invention carries
The surface phasmon enhancing MEMS infra red radiation light sources based on the compound super surface texture of ITO/IZO substrates " sandwich " type are gone out
Structure.
Invention content
The present invention for current MEMS infra red radiation light sources line width it is big, filtering property is poor, grow away from detecting limitation the problems such as, carry
For the MEMS infra red radiation light sources and production method of " sandwich " type metal superstructure.
The present invention adopts the following technical scheme that realization：The infra red radiation light source of " sandwich " type metal superstructure,
Including ITO/IZO substrates, the pores array structural metal film layer in deposition on substrate, dielectric layer and in dielectric layer
The rectangular-shape metal array structure of upper preparation, the pores array structural metal film layer of bottom, the dielectric layer in middle level and top
The rectangular-shape metal array structure of layer constitutes " sandwich " type metal superstructure.It is transmitted extremely using pores array feature optical
Enhancement effect and the coupling of rectangular-shape metal array structure local surface plasmon resonance aerial radiation enhancement effect can be shown
Enhancing MEMS infrared light supplies radiation is write, while the geometric parameter by adjusting metal array and dielectric layer structure may be implemented
The adjustment of MEMS infrared source working wave bands and narrowing for line width.Basic functional principle is：" sandwich " type metal superstructure exists
Light excitation is lower to generate plasmon resonance, on the one hand, it is total that metal superstructure generates local surface phasmon under outer field excitation
It shakes and energy accumulating enhanced rad ability occurs, on the other hand, collective's concussion of electronics leads to the heat of ohmic loss generation and increases
Strong infra-red radiation.Using MEMS technology, using surface plasmon resonance structure to blackbody radiation spectrum have enhancing transmission and
Filtering cut out characteristic, can be made into can emit high-performance, narrow line width regulatable the phasmon MEMS sources of infrared radiation.Therefore,
The research work for carrying out surface plasmon resonance effect enhancing MEMS infra-red radiations has very important research significance and dives
In application value.The metal superstructure for enhancing infra-red radiation based on surface phasmon, which is applied to enhancing infra-red radiation, to be had very
Good novelty.
The manufacturing method of the infra red radiation light source of above-mentioned " sandwich " type metal superstructure, includes the following steps：
The first step：Even one layer of negative photoresist on ITO/IZO substrates；
Second step：The negative photoresist on ITO/IZO substrates is exposed using electron-beam exposure system, and is shown
Shadow, fixing processing；
Third walks：Using Magnetron Sputtering Thin Film depositing system to deposition on substrate metallic film；
4th step：The metal removal for being adhered to photoresist and photoresist above using Lift off techniques, on substrate
To pores array structural metal film layer；
5th step：Continue to grow one layer of dielectric layer using chemical meteorology deposition method on ITO/IZO substrates（The dielectric
Layer wants translucency good）；
6th step：Even one layer of positive photoetching rubber on the dielectric layer；
7th step：The positive photoetching rubber for getting rid of on the dielectric layer is exposed using alignment process, develops, be fixed；
8th step：Magnetron sputtering metal-coated films are utilized again；
9th step：The metal above photoresist and photoresist is removed using Lift off techniques, obtains rectangular-shape metal
Array structure finally obtains " sandwich " type metal superstructure.
The present invention proposes a kind of infra red radiation light source being based on surface phasmon " sandwich " type metal superstructure.It should
MEMS infra red radiation light sources array structure is by pores array structural metal film layer-dielectric layer-rectangular-shape metal array structure
It forms, the adjustment to MEMS infra red radiation light source service bands, transmission enhancing and line may be implemented under different array structure parameters
Wide narrows.
Description of the drawings
Figure one is the entire process flow diagram of the present invention.
Figure two is the technological process design sketch of the present invention.
Figure three is the sectional view of single " sandwich " type metal superstructure infra red radiation light source, in figure：1-ITO/IZO bases
Bottom, 2- pores arrays structural metal film layer, 3- dielectric layers, 4- rectangular-shape metal array structures.
Figure four is the structural schematic diagram of " sandwich " type metal superstructure infra red radiation light source, wherein bottom pores array knot
The thickness of structure metal film layer ist, the thickness of interlayer dielectric isd, the thickness of top layer rectangular-shape metal array structure ish, length isl, width isw, top layer cuboid metal array structure is respectively the distance between all aroundP 2、P 1。
Figure five is to have rectangular-shape metal array structure and when without top layer rectangular-shape metal array structure, and surface etc. is from swashing
The resonance line of member enhancing infra-red radiation metal superstructure, the results showed that increasing top layer rectangular-shape metal array structure can be real
Now to the enhancing of the regulation and control and optical transmission of " sandwich " type metal superstructure infra-red radiation resonance peak position.
Figure six is to adjust the surface phasmon enhancing infra-red radiation metal superstructure obtained when the thickness of dielectric layer
Resonance line, the results showed that may be implemented to " sandwich " type metal superstructure infra-red radiation by adjusting the thickness of dielectric layer
The adjustment of resonance peak position.
The surface phasmon enhancing that figure seven obtains when being the thickness of adjustment bottom pores array structural metal film layer is red
The resonance line of external radiation metal superstructure, the results showed that the thickness for increasing bottom pores array structural metal film layer can be real
Now " sandwich " type metal superstructure infra-red radiation work line width is narrowed, but its intensity in transmission can weaken.
The surface phasmon enhancing that figure eight obtains when being the size of adjustment top layer rectangular-shape metal array structure is infrared
The resonance line of radiation metal superstructure, the results showed that in the case where top layer rectangular-shape metal structure thickness is certain, change
The adjustment to " sandwich " type metal superstructure resonance peak position may be implemented in the area of top layer rectangular-shape metal array structure
With the change of optical transmission intensity.
Figure nine is the infrared spoke of surface phasmon enhancing for adjusting the array period of rectangular-shape metal array structure and obtaining
The resonance line of radioglold category superstructure, the results showed that with its transmission of the increase of array period of rectangular-shape metal array structure
Intensity reduces, but transmission peaks narrow.
Specific implementation mode
The entire machining process of the present invention is described in further detail below in conjunction with the accompanying drawings.
With reference to figure one, figure two, the infra red radiation light source of " sandwich " type metal superstructure：Including ITO/IZO substrates, in base
The pores array structural metal of on piece deposition（Ag）Film layer, dielectric layer and the rectangular-shape prepared on the dielectric layer
Metal（Ag）Array structure, pores array structural metal film layer, the dielectric layer in middle level and the rectangular-shape of top layer of bottom
Metal array structure constitutes " sandwich " type metal superstructure.The thickness of wherein underlying metal film layer ist, interlayer dielectric
Thickness bed, the thickness of top-level metallic array structure ish, the length of single cuboid metal derby isl, width isw, top layer gold
Belonging to array structure is respectively the distance between all aroundP 2、P 1.When metal superstructure parametert、d、l、w、P 1、P 2In any one
When a parameter changes, the resonance line of surface phasmon enhancing infra-red radiation metal superstructure can all become therewith
Change.Therefore can by reasonably design metal superstructure parameter realize high emission performance, narrow linewidth and it is tunable etc. from
Excimer MEMS infra red radiation light sources.
Metal superstructure bottom pores array structural metal thin film layer thickness（t）Adjusting, whentWhen taking different values, table
The cavity linewidth of face phasmon enhancing infra-red radiation metal superstructure can change.And withtThe increase of numerical value,
Resonance spectrum line width narrows, but its intensity in transmission weakens.
Metal superstructure dielectric layer thickness（d）Adjusting, whendWhen taking different values, surface phasmon enhancing is infrared
The resonance line of radiation metal superstructure can drift about, and withdBlue shift can occur for the increase of numerical value, resonance line.
The adjusting of metal superstructure top layer rectangular-shape metal array structure size changes top layer rectangular-shape metal array
The adjustment to " sandwich " type metal superstructure optical transmission intensity and resonance peak position may be implemented in the area of structure.
When the array period of metal superstructure changes, surface phasmon enhances the saturating of infra-red radiation metal superstructure
It penetrates intensity and resonance spectral line width also changes therewith.Its resonance spectrum line width of the array period of increase metal superstructure can narrow,
But intensity in transmission can weaken.
The above-mentioned manufacturing method based on surface phasmon enhancing infra-red radiation " sandwich " type metal superstructure, including with
Lower step：
The first step：Even one layer of negative photoresist on ITO/IZO substrates.
Second step：The negative photoresist on ITO/IZO substrates is exposed using electron-beam exposure system, and is shown
Shadow, fixing processing.
Third walks：Using Magnetron Sputtering Thin Film depositing system to deposition on substrate metal (Ag) film.
4th step：The metal removal adhered to by photoresist and above using Lift off techniques.
5th step：On ITO/IZO substrates one layer of dielectric layer (SiO is grown using chemical meteorology deposition method2), and carry out
Annealing.
6th step：Continue even one layer of positive photoetching rubber on ITO/IZO substrates.
7th step：The positive photoetching rubber for getting rid of on the dielectric layer is exposed using alignment process, develops, be fixed.
8th step：Magnetron sputtering metal (Ag) film is utilized again.
9th step：Metal using Lift off techniques removal photoresist and above, obtains " sandwich " type metal superjunction
Structure.
Under the resonant excitation of outfield, generated in rectangular-shape shape metal surface has " sandwich " type metal superstructure structure
So-called " hot spot " of high field local, these " hot spots " are so that the super surface texture infra-red radiation enhancing of metal, another aspect, super surface
Collective's concussion of upper metal array electronics leads to ohmic loss and generates heat radiation, and additional energy is provided for infra-red radiation enhancing
Amount supplement.Utilize surface plasmon resonance structure（SPR）There is enhancing to transmit and filter blackbody radiation spectrum and cut characteristic,
It can realize that high emission performance, narrow linewidth can by adjusting the geometric parameter and array period of " sandwich " type metal superstructure
The phasmon MEMS infra red radiation light sources of tuning.
Claims (2)
- The infra red radiation light source of " 1. sandwich " type metal superstructure, it is characterised in that including ITO/IZO substrates, on substrate Pores array structural metal film layer, dielectric layer and the rectangular-shape metal array prepared on the dielectric layer of deposition The thickness of structure, underlying metal film layer ist, the thickness of interlayer dielectric isd, the thickness of top-level metallic array structure ish, the length of single cuboid metal derby isl , width isw, top-level metallic array structure is the distance between all around respectively ForP 2 、P 1 , when metal superstructure parameter t 、d 、l 、w 、P 1 、P 2 In any one parameter when changing, surface etc. The resonance line for enhancing infra-red radiation metal superstructure from excimer can all change therewith, therefore can be by reasonably designing Metal superstructure parameter realizes high emission performance, narrow linewidth and tunable phasmon MEMS infra red radiation light sources.
- 2. the manufacturing method of the infra red radiation light source of " sandwich " type metal superstructure as described in claim 1, feature exist In including the following steps：The first step：Even one layer of negative photoresist on ITO/IZO substrates；Second step：The negative photoresist on ITO/IZO substrates is exposed using electron-beam exposure system, and is developed, is fixed Shadow processing；Third walks：Using Magnetron Sputtering Thin Film depositing system to deposition on substrate metallic film；4th step：The metal removal for being adhered to photoresist and photoresist above using Lift off techniques, obtains hole on substrate Hole array structure metal film layer；5th step：Continue to grow one layer of dielectric layer using chemical meteorology deposition method on ITO/IZO substrates；6th step：Even one layer of positive photoetching rubber on the dielectric layer；7th step：The positive photoetching rubber for getting rid of on the dielectric layer is exposed using alignment process, develops, be fixed；8th step：Magnetron sputtering metal-coated films are utilized again；9th step：The metal above photoresist and photoresist is removed using Lift off techniques, obtains rectangular-shape metal array Structure finally obtains " sandwich " type metal superstructure of enhancing infra-red radiation.
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| CN108169171B (en) * | 2017-12-08 | 2020-12-25 | 苏州大学 | Refractive index test based on surface plasmon resonance and manufacturing method thereof |
| CN108107684B (en) * | 2017-12-27 | 2020-03-24 | 陕西师范大学 | Double-layer nanostructure for regulating circular dichroism and preparation method thereof |
| CN109375477B (en) * | 2018-12-07 | 2021-09-10 | 中山科立特光电科技有限公司 | Preparation method of metal spiral micro-nano structure |
| CN109901258A (en) * | 2019-04-04 | 2019-06-18 | 湖南大学 | A kind of micro-nano integrated device of Color Full holography and preparation method thereof |
| JP7450912B2 (en) * | 2019-12-20 | 2024-03-18 | 国立研究開発法人物質・材料研究機構 | Detection element and light emitting element for infrared light |
| CN112436287B (en) * | 2020-11-30 | 2022-07-29 | 江西师范大学 | Electromagnetic super surface, preparation method thereof and nano broadband notch filter |
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| CN103308486A (en) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | Surface-plasma-based infrared photon absorption device of composite resonator |
| US8987754B1 (en) * | 2013-09-16 | 2015-03-24 | Sandia Corporation | Highly directional thermal emitter |
| CN104614077A (en) * | 2015-02-05 | 2015-05-13 | 电子科技大学 | Optical window with high terahertz wave transmission rate and low infrared light transmission rate |
| CN105355703A (en) * | 2015-11-18 | 2016-02-24 | 南京大学 | Absorption structure of infrared quantum well photoelectric detector |
| WO2016106083A1 (en) * | 2014-12-23 | 2016-06-30 | University Of Central Florida Research Foundation, Inc. | Optical frequency-selective absorber-based infrared detector, methods, and applications |
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Patent Citations (5)
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| CN103308486A (en) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | Surface-plasma-based infrared photon absorption device of composite resonator |
| US8987754B1 (en) * | 2013-09-16 | 2015-03-24 | Sandia Corporation | Highly directional thermal emitter |
| WO2016106083A1 (en) * | 2014-12-23 | 2016-06-30 | University Of Central Florida Research Foundation, Inc. | Optical frequency-selective absorber-based infrared detector, methods, and applications |
| CN104614077A (en) * | 2015-02-05 | 2015-05-13 | 电子科技大学 | Optical window with high terahertz wave transmission rate and low infrared light transmission rate |
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