CN105355703A - Absorption structure of infrared quantum well photoelectric detector - Google Patents
Absorption structure of infrared quantum well photoelectric detector Download PDFInfo
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- CN105355703A CN105355703A CN201510801646.4A CN201510801646A CN105355703A CN 105355703 A CN105355703 A CN 105355703A CN 201510801646 A CN201510801646 A CN 201510801646A CN 105355703 A CN105355703 A CN 105355703A
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- 238000010521 absorption reaction Methods 0.000 title abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 230000000737 periodic effect Effects 0.000 claims abstract description 7
- 239000010931 gold Substances 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 abstract description 18
- 238000010168 coupling process Methods 0.000 abstract description 18
- 238000005859 coupling reaction Methods 0.000 abstract description 18
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000005855 radiation Effects 0.000 abstract description 14
- 230000003287 optical effect Effects 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 230000010287 polarization Effects 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 101100379081 Emericella variicolor andC gene Proteins 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
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Abstract
The invention, which belongs to the field of the optical device in sub-wavelength photonics, discloses an absorption structure of an infrared quantum well photoelectric detector. The absorption structure for coupling incident electromagnetic waves to a quantum well active region comprises an upper metal layer, an intermediate semiconductor layer, and a lower metal layer. The upper metal layer is a periodic metal square array, the intermediate semiconductor layer is a quantum well layer, and the lower metal layer is a flat metal plate having a surface with the periodic metal square array. According to the absorption structure, on the basis of coupling of a micro-cavity mode excited by a metal microstructure and a hybridized SSPs mode, absorption of infrared radiation by the quantum well active region can be improved obviously and the electric field component (Ez) that is vital to quantum well absorption and is perpendicular to the quantum well plane is effectively enhanced, thereby overcoming a defect that the traditional quantum well infrared photoelectric detector does not absorb incident infrared radiation. With the structure, the detection efficiency of the ultra-far infrared photoelectric detector can be improved obviously.
Description
Technical field
The present invention relates to a kind of design of infrared quantum trap photodetector absorbing structure, belong to the field of optics in sub-wavelength photonic propulsion.Be specifically related to a kind of optical absorber structure of metal-semiconductor-metal, can local infrared radiation efficiently, and effectively strengthen electric field E
zcomponent.
Background technology
Infrared Detectors is a kind of electrooptical device infrared radiation being carried out to high sensitivity induction, and wherein 14-16 micron very long wave infrared focus plane photodetector is the key technology of sophisticated and futuristic weapons system and the modernization of national defense.Infrared photoelectric detector can be divided into according to material system: mercury cadmium telluride (HgCdTe) system developed the earliest, and from the quantum trap infrared detector (QWIP) that eighties of last century the eighties grows up.As everyone knows, HgCdTe material will sharply reduce in the infrared electro conversion efficiency of very long wave, and still there is the difficulty in preparation.Compared with the Infrared Detectors prepared with traditional material HgCdTe, quantum trap infrared detector can form large area, low-power consumption, low cost, high uniformity and highly sensitive focal plane array (FPA) imaging system.Fast development in linear array and focal plane array application, shows the great potential of QWIP technology in LONG WAVE INFRARED large area focal plane array and polychrome imaging applications.
But, for N-shaped GaAs (GaAs) QWIP generally used, due to the selection rule of quantums absorption, be merely able to absorb the electric field component (E of quantum well region perpendicular to quantum well plane
z).So, in order to improve responsiveness and the detectivity of device, optical coupled process must be carried out to QWIP device, such as 45 degree of angle laps or Brewster angle geometry designs, partial electric-field can be made like this perpendicular to quantum well plane.But for two-dimensional imaging focal plane arrays, need incident electromagnetic wave to impinge perpendicularly on quantum well plane.Therefore adopt the direction of propagation of the structural change incident lights such as one dimension, two-dimension periodic grating, unordered grating, make it to be absorbed by quantum well.But more efficient method is the thought that can utilize resonance absorption, by introducing optical resonance structure, improves the local electric field intensity in quantum well region significantly, and improving electric field component (E pointedly
z), to improve the absorption efficiency of quantum well.
Surface plasma excimer (SurfacePlasmonPolaritons, SPPs) micro-structural system and metal metamaterial system, because the incident electromagnetic wave that can effectively be coupled can produce very large local electric field strengthen, so be all effective optical coupled means to sub-wavelength spatial.Such as, in long wave infrared region, by making traditional similar surfaces plasma primitive (Spoofsurfaceplasmon, and the mode of waveguide mode hydridization SSPs), produce hydridization SSPs pattern, the incident electric fields that can effectively be coupled is to waveguide mode and produce the far field absorption of " perfection ".In addition, one is present in the microcavity pattern in metal-dielectric (semiconductor)-metal system, is resonated, effectively can improve the interaction of light and material by coupling incident electric fields in medium (semiconductor) microcavity.
Summary of the invention
The object of the invention is to overcome the non-absorbent defect of the infrared radiation of quantum well infrared photoelectric detector to normal incidence, for detector provides a kind of absorbing structure, by introducing adjustable microcavity pattern and the coupling of hydridization SSPs pattern, the quantum well region that can improve significantly is to the absorption of infrared radiation.
The present invention is achieved by the following technical solutions,
A kind of absorbing structure of infrared quantum trap photodetector, for the incident electromagnetic wave that is coupled to quantum well active region, described absorbing structure comprises metal level, middle semiconductor layer and lower metal layer, wherein, upper metal level is periodic metal squares array, middle semiconductor layer is quantum well layer, and lower metal layer is the metal plate of surface with periodicity metal squares array.
Further, described middle semiconductor layer also comprises resilient coating, and quantum well layer is arranged on the centre of resilient coating.
Preferably, the material of described resilient coating is semiconductor.
Metal squares array on the metal squares array of described upper metal level and lower metal layer has identical cycle and symmetry.
Preferably, the material of described upper metal level is gold.The material of described lower metal layer is gold.
Above-mentioned metal micro structure system of the present invention supports two kinds of optical modes.Comprise the microcavity pattern be present between metal level and lower metal plate, and a kind of hydridization SSPs pattern that lower metal periodic structure is supported.
The resonant wavelength of microcavity pattern is determined by following formula
wherein, n
effbe pattern effective refractive index, m, n are the integers representing pattern exponent number, and a is the length of side of metal squares in upper metal level.Therefore can by the resonant wavelength regulating the length of side of upper strata metal squares to regulate microcavity pattern easily.The resonant wavelength of hydridization SSPs pattern determines primarily of other structural parameters such as cycles.By the optimization of structural parameters, the resonant wavelength of microcavity pattern and hydridization SSPs pattern can be adjusted to Same Wavelength position, produce a coupled mode.This coupled mode can increase the absorption of quantum well layer to light significantly, and strengthens the size of the electric field component perpendicular to quantum well plane of quantum well region.
In sum, the present invention, by introducing metal micro structure system, can excite SSPs pattern and microcavity pattern, effectively can realize the local of light field, improves the absorption efficiency of quantum well.The present invention has the following advantages:
(1) microcavity resonance mode that can regulate and hydridization SSPs resonance mode is supported, and by the mode of Mode Coupling, the absorption efficiency invention improving quantum well further effectively overcomes the non-absorbent defect of the infrared radiation of quantum well infrared photoelectric detector to normal incidence.
(2) electromagnetic field is made by strong local in quantum well region by the coupling of microcavity pattern and hydridization SSPs pattern, considerably improve the absorption of quantum well active region to infrared radiation, and effectively enhance the most important electric field component (E perpendicular to quantum well plane of quantum well absorption
z) size.Have the very raising of far red light electric explorer detection efficient and act on very significantly.
(3) coupling efficiency of absorbing structure of the present invention is better than other existing microstructure design, and has the weak dispersivity of larger angle and the insensitivity to polarization.
Accompanying drawing explanation
The cross section view that Fig. 1 (a) and (b) are respectively infrared quantum trap photodetector absorbing structure with and end view, wherein, 1-upper strata gold square array, the upper contact layer of 2-, 3 quantum well layers, contact layer under 4-, 5-with the golden plate of periodically golden square array, 6-GaAs substrate.
Fig. 2 is the linear spectral line that infrared quantum trap photodetector absorbing structure changes with the upper strata metal squares length of side.
Fig. 3 be (a) hydridization SPPs pattern, (b) microcavity pattern and (c) coupled mode electric field z component absolute value (| E
z|) at the distribution map of y-z plane.
Fig. 4 is the distribution of electric field in the enhancing size of whole intermediate semiconductor region, is characterized by function F.
Fig. 5 infrared quantum trap photodetector absorbing structure absorbs the distribution of energy in quantum well layer (QWs) and gold (Au).
Fig. 6 is under the illuminated with infrared radiation of oblique incidence, and (a) polarization state is s-polarization and (b) polarization state is the distribution that the coupling efficiency in two kinds of situations of p-polarization changes with incident angle (0 °-50 °).
Fig. 7 is under normal incidence illuminated with infrared radiation, the distribution that coupling efficiency changes with different polarization angle (0 °-45 °).
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, the present embodiment is by the optical coupled chamber of metal (gold)-SEMICONDUCTOR-METAL sandwich micro-structural.Upper strata metal is that periodic golden square array 1 length of side is defined as a, and lower floor is the golden plate 5 with the golden square array of periodicity, and the length of side and the thickness of lower floor's gold square are defined as b and t.Upper strata gold square array and lower floor's gold array have identical cycle (p) and symmetry.Multi layer quantum well is placed in the middle of metal level, and quantum well layer about 3 arranges certain thickness upper contact layer 2 and lower contact layer 4 respectively.
The period p of array is set to 6.9 μm, GaAs multiple quantum trap layer thickness is 400nm, the thickness of upper and lower gallium arsenide semiconductor (GaAs) contact layer is respectively 200nm and 300nm, and the upper strata gold square length of side is 1.6 μm, and lower floor's gold square length of side is 3.5 μm.
As seen from Figure 2 in the present embodiment, absorption spectrum has two kinds of absworption peaks, one remains on the hydridization SSPs pattern of 14.5 μm for resonant wavelength, another is the microcavity pattern of resonant wavelength with upper strata gold square length of side a change, pattern exponent number is m=1, n=0 or m=0 herein, n=1.As the length of side a by changing upper strata gold square, the resonant wavelength of microcavity pattern and hydridization SSPs pattern is made to be in Same Wavelength position, thus form one and absorb stronger coupled mode, this resonance mode goes out to have the absworption peak of 92% at 14.5 μm, compared to microcavity pattern and hydridization SSPs pattern, absorption efficiency is stronger.
Fig. 3 is the electric field of hydridization SSPs pattern, microcavity pattern and coupled mode | E
z| at the distribution map of y-z plane.When wherein hydridization SSPs pattern and microcavity pattern correspond to Fig. 2 the golden square length of side are set to a=2.4 μm at the middle and upper levels in absorption line, two absworption peaks of 14.5 μm and 19.2um, the absworption peak of 14.5 μm in absorption line when coupled mode corresponds to Fig. 2 the golden square length of side is set to a=1.6 μm at the middle and upper levels.
The absorption provided in above-mentioned calculating derives from two parts altogether, a part by quantum well region absorb to producing the useful part of photoelectric current, the part of another part by upper and lower two-layer golden absorption loss.Fig. 4 gives by the distribution that quantum well region and gold absorb in the present embodiment, and can find out that most energy is absorbed by quantum well region, small part energy is by golden loss.
The distribution of size at quantum well region diverse location is strengthened compared to in-field, defined function in order to characterize electric field z durection component
s is the distance of distance upper strata Jin-interface herein, E
0for the electric field strength of incident IR radiation, E
zfor the size in quantum well region induction field intensity z durection component.Fig. 5 gives the curve that function F changes with s, this shows, at whole semiconductor regions, and electric field E
zcompared to incident electric fields E
0have very large enhancing effect, at quantum well layer, function F is about 6 maintenances.
Because the size and whole quantum well region that produce photoelectric current in quantum well are average | E
z|
2size be directly proportional, therefore can define coupling efficiency
characterize the enhancing effect that this metal micro structure system detects quantum well, integral domain is whole quantum well region herein.Under giving p polarization and s polarization situation in figure 6, the X-Y scheme that different incidence angles coupling efficiency η changes with incident wavelength.This shows, under normal incidence illuminated with infrared radiation, have a peak value to be about 6 at 14.5 μm of place's coupling efficiencies.(S.Wang in a research work in nearest (in March, 2015), W.Tian, F.Wu, J.Zhang, J.Dai, Z.Wu, Y.Fang, Y.Tian, andC.Q.Chen, " EfficientopticalcouplinginAlGaN/GaNquantumwellinfraredph otodetectorviaquasi-one-dimensionalgoldgrating, " Opt.Express (2015) 23 (7), 8740-8748), devise one-dimensional metal optical grating construction, quantum well absorption efficiency is improved by coupling local surface phasmon and surface plasmon polariton, but its coupling efficiency is only 0.85, the present invention is by coupling hydridization SPPs pattern and microcavity pattern, coupling efficiency is greatly improved.Simultaneously along with the change of incident angle, in p polarization and s polarization situation, coupling efficiency of the present invention all keeps very high enhancing effect in the scope of ﹤ 40 °.
Fig. 7 gives the X-Y scheme that coupling efficiency changes with polarization angle and incident wavelength under normal incidence illuminated with infrared radiation.This shows, this metal micro structure system aligns incident IR radiation does not have polarization sensitivity.
Claims (6)
1. the absorbing structure of an infrared quantum trap photodetector, for the incident electromagnetic wave that is coupled to quantum well active region, it is characterized in that, described absorbing structure comprises metal level, middle semiconductor layer and lower metal layer, wherein, upper metal level is periodic metal squares array, and middle semiconductor layer is quantum well layer, and lower metal layer is the metal plate of surface with periodicity metal squares array.
2. the absorbing structure of a kind of infrared quantum trap photodetector according to claim 1, it is characterized in that, described middle semiconductor layer also comprises resilient coating, and quantum well layer is arranged on the centre of resilient coating.
3. the absorbing structure of a kind of infrared quantum trap photodetector according to claim 2, is characterized in that, the material of described resilient coating is semiconductor.
4. the absorbing structure of a kind of infrared quantum trap photodetector according to claim 1, is characterized in that, the metal squares array on the metal squares array of described upper metal level and lower metal layer has identical cycle and symmetry.
5. according to the absorbing structure of a kind of infrared quantum trap photodetector one of Claims 1-4 Suo Shu, it is characterized in that, the material of described upper metal level is gold.
6. according to the absorbing structure of a kind of infrared quantum trap photodetector one of Claims 1-4 Suo Shu, it is characterized in that, the material of described lower metal layer is gold.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106206867B (en) * | 2016-07-21 | 2018-10-19 | 中北大学 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
Citations (4)
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|---|---|---|---|---|
| CN102437228A (en) * | 2011-11-25 | 2012-05-02 | 河南理工大学 | Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof |
| CN102593201A (en) * | 2011-12-06 | 2012-07-18 | 复旦大学 | Polychrome quantum well photon detecting device based on surface plasma micro cavity |
| CN102709346A (en) * | 2012-05-16 | 2012-10-03 | 复旦大学 | Light detector of semiconductor quantum well |
| CN104332510A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437228A (en) * | 2011-11-25 | 2012-05-02 | 河南理工大学 | Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof |
| CN102593201A (en) * | 2011-12-06 | 2012-07-18 | 复旦大学 | Polychrome quantum well photon detecting device based on surface plasma micro cavity |
| CN102709346A (en) * | 2012-05-16 | 2012-10-03 | 复旦大学 | Light detector of semiconductor quantum well |
| CN104332510A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206867B (en) * | 2016-07-21 | 2018-10-19 | 中北大学 | The infra red radiation light source and production method of Sandwich-shaped superstructure |
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