CN102437228A - Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof - Google Patents
Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof Download PDFInfo
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- CN102437228A CN102437228A CN201110380428XA CN201110380428A CN102437228A CN 102437228 A CN102437228 A CN 102437228A CN 201110380428X A CN201110380428X A CN 201110380428XA CN 201110380428 A CN201110380428 A CN 201110380428A CN 102437228 A CN102437228 A CN 102437228A
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Abstract
The invention relates to a quantum well infrared focal plane photosensitive element chip with a grating in a bottom coupling mode and a preparation method thereof; therefore, problems that a manufacturing process of a focal plane photosensitive element chip is simplified and grating coupling efficiency is improved can be effectively solved. The chip is characterized in that: a transmission grating that is formed by n type gallium arsenide and Au in an alternative and periodic arrangement is formed on a gallium arsenide substrate; a lower contact layer is arranged on the transmission grating; multi-quantum well layers are formed on the lower contact layer; upper contact layers are formed on the multi-quantum well layers; Au reflecting layers are arranged on the upper contact layers; alloy upper electrodes are arranged on the Au reflecting layers; an alloy common lower electrode is formed on one end of the lower contact layer; and silica passivation layers are formed at two sides of the lower contact layer, the multi-quantum well layers, the upper contact layers, the Au reflecting layers, the alloy upper electrodes and the alloy upper electrodes. According to the preparation method, a wafer bonding technology and a conventional semiconductor technology are employed to place a transmission grating at the bottom of multi-quantum well layers, so that an integrated structure is formed. According to the invention, the structure is novel and unique; optical coupling efficiency is improved; and the manufacturing technology and the method are simple.
Description
Technical field
The present invention relates to the semiconductor photoelectronic device field, particularly a kind of bottom coupling grating quantum trap infra-red focus planar photosensitive element chip and preparation method thereof.
Background technology
GaAs/AlGaAs quantum trap infrared detector (Quantum Well Infrared Photodetector; Be called for short QWIP) with its material growth and mature preparation process; Be easy to that big face battle array is integrated, good stability, device good uniformity, cost are low, realize double-colored easily and advantage such as polychrome focal plane device, radioresistance; Have wide practical use in fields such as national defence detection, forest fire protection, industrial monitoring and health cares, become infrared acquisition hot research fields in recent years.
Yet according to the selection rule of quantum leap, the QWIP device has forbiddenness to the infrared light of normal incidence.Therefore must adopt certain optical coupling mode, the direction of growth that makes the direction of an electric field of incident light be parallel to SQW excites sub-band transition, realizes the detection of infrared light.Common optical coupling mode has multiple optical coupling modes such as 45 oblique incidence, two-dimension periodic grating, diffuse reflection grating, ripple coupling grating.
The two-dimension periodic grating is best suited for the optical coupling mode of large tracts of land focal plane infrared quantum well detector, but there is following problem in it: (1) infrared light is absorbed by quantum well layer after through optical grating reflection, so coupling efficiency is lower; (2) present two-dimension periodic grating all is positioned at the top of focal plane photosensitive element chip; For with focal plane photosensitive element chip and the complete focal plane device of the interconnected formation of reading circuit; Often need on the two-dimension periodic grating of top, adopt alignment fabrication techniques electrode; This has not only destroyed the integrality of two-dimension periodic grating, and has increased the difficulty of manufacture craft.Therefore, its improvement and innovate imperative.
Summary of the invention
To above-mentioned situation; For overcoming the defective of prior art; The present invention's purpose just provides a kind of bottom coupling grating quantum trap infra-red focus planar photosensitive element chip and preparation method thereof; Can effectively solve the grating coupled modes of improving chip, simplify focal plane photosensitive element chip manufacture craft, improve the problem of grating coupling efficiency.
The technical scheme that the present invention solves is that its structure of photosensitive element chip of the present invention is to be combined by several parts from bottom to top to constitute:
The transmission grating that is made up of n p type gallium arensidep and golden alternate cycle property arrangement is arranged on gallium arsenide substrate; Contact layer under the n p type gallium arensidep is arranged above the transmission grating; The GaAs/AlGaAs multiple quantum well layer is arranged on the contact layer under the n p type gallium arensidep; Contact layer on the n p type gallium arensidep is arranged on the GaAs/AlGaAs multiple quantum well layer; Gold (Au) reflector is arranged on the contact layer on the n p type gallium arensidep; The gold (Au) gold/germanium/nickel (Au/Ge/Ni) alloy top electrode is arranged above the reflector, the public bottom electrode of gold/germanium/nickel alloy is arranged on the end of contact layer under the n p type gallium arensidep, under the n p type gallium arensidep on contact layer, GaAs/AlGaAs multiple quantum well layer, the n p type gallium arensidep both sides of contact layer, gold (Au) reflector, gold/germanium/nickel (Au/Ge/Ni) alloy top electrode and gold/germanium/public bottom electrode of nickel alloy silicon dioxide (SiO is arranged
2) passivation layer; Its preparation method is, adopts wafer bonding technology and conventional semiconductor technology that transmission grating is placed the bottom of GaAs/AlGaAs multiple quantum well layer, is integrally formed structure.
Product structure of the present invention is novel unique; Improved the coupling efficiency of quantum trap infra-red focus planar photosensitive element chip; Needed complicated manufacture craft when having avoided in the past on the two-dimension periodic grating of top, adopting alignment fabrication techniques electrode, method is simple, is the innovation on semiconductor device is produced.
Description of drawings
Fig. 1 is a structural front view of the present invention.
Fig. 2 is a bottom transmission square hole two-dimension periodic grating planing surface sketch map of the present invention.
Fig. 3 is parallel to the optical field distribution sketch map of the light wave of quantum trap growth direction for multiquantum well region internal electric field direction in the embodiment of the present invention.
Fig. 4 is the light wave electric field relative intensity distribution map at different planing surfaces place in the multiple quantum well layer in the enforcement of the present invention.
Embodiment
Elaborate below in conjunction with the accompanying drawing specific embodiments of the invention.
Provided by Fig. 1, photosensitive element chip of the present invention is to be combined by several parts from bottom to top to constitute:
The transmission grating that is made up of n p type gallium arensidep 02 and golden 03 alternate cycle property arrangement is arranged on gallium arsenide substrate 01; Contact layer 04 under the n p type gallium arensidep is arranged above the transmission grating; GaAs/AlGaAs multiple quantum well layer 06 is arranged on the contact layer under the n p type gallium arensidep; Contact layer 07 on the n p type gallium arensidep is arranged on the GaAs/AlGaAs multiple quantum well layer; Gold (Au) reflector 08 is arranged on the contact layer on the n p type gallium arensidep; The gold (Au) gold/germanium/nickel (Au/Ge/Ni) alloy top electrode 09 is arranged above the reflector, the public bottom electrode 10 of gold/germanium/nickel alloy is arranged on the end of contact layer 04 under the n p type gallium arensidep, under the n p type gallium arensidep on contact layer, GaAs/AlGaAs multiple quantum well layer, the n p type gallium arensidep both sides of contact layer, golden reflector, gold/germanium/nickel alloy top electrode and gold/germanium/public bottom electrode of nickel alloy silicon dioxide (SiO is arranged
2) passivation layer 05.
The peak working load wavelength of getting quantum trap infra-red focus planar in described instance is 4.133 microns, and getting the GaAs refractive index is 3.24, and the grating cycle is 0.65 micron, and golden 03 width is 0.325 micron; Gallium arsenide substrate is thick to be 30 microns; Transmission grating is for being square hole two-dimension periodic grating (as shown in Figure 2), and n p type gallium arensidep 02 is identical with the width of gold 03, and each cycle is wide 0.65 micron, its height
D=λ/2n, wherein
λBe lambda1-wavelength, n is the refractive index of n p type gallium arensidep, its cycle
P=d, gold 03 width wherein
A=d/2 Contact layer 04 thickness is 0.5 micron under the n p type gallium arensidep; GaAs/AlGaAs multiple quantum well layer 06 thickness is 1.41 microns; Contact layer 07 thickness is 0.5 micron on the n p type gallium arensidep; The light that the reflector will be incided in gold reflector 08 reflects back, and increases the absorption efficiency of GaAs/AlGaAs multiple quantum well layer, and thickness is 1.0 microns; Silicon dioxide passivation layer 05 thickness is 1.0 microns; Gold/germanium/nickel alloy top electrode 09 thickness is 1.0 microns; The public bottom electrode 10 of gold/germanium/nickel alloy is around whole photosensitive element chip, and the annular of stretching out the photosensitive element chip edge, constitutes the public bottom electrode of all pixels in the photosensitive element chip.
The pixel number of described photosensitive element chip is the capable N row of M, and wherein M, N are positive integer, and the value of M, N can be confirmed according to actual needs.
The preparation method of photosensitive element chip of the present invention is to comprise the steps:
1, with crystal production technology molecular beam epitaxy (MBE), on the semi-insulating GaAs substrate, grows contact layer under the n-GaAs successively, GaAs/AlGaAs multiple quantum well layer, the last contact layer of n-GaAs;
2, with mechanical reduction technology the semi-insulating GaAs substrate is removed, expose contact layer under the n-GaAs, use the ultraviolet photolithographic technology under n-GaAs, to etch optical grating construction on the contact layer;
3, steaming degree metallic gold on optical grating construction, and use mechanical reduction technology, metal grating in the formation;
4, the method that provides with step 1 (MBE); Growth one deck n-GaAs contact layer uses the ultraviolet photolithographic technology on the n-GaAs contact layer, to etch optical grating construction, steaming degree metallic gold on optical grating construction on the Semi-insulating GaAs substrate; And use mechanical reduction technology, form metal grating down;
5, with the upper and lower metal grating bonding of wafer bonding technology, form chip structure with step 3 and step 4 formation;
6, the chip structure that step 5 is prepared carries out etching, and etching depth reaches contact layer formation step-like structure under the n-GaAs;
7, contact layer steaming degree metal A u reflector on n-GaAs;
8: in two outgrowth silicon dioxide passivation layer of the upper surface and the step-like structure after step 6 etching of the chip structure that step 5 prepares;
9, photoetching on silicon dioxide passivation layer, erode away fairlead, and in fairlead steaming degree Au/Ge/Ni, form gold/germanium/nickel alloy top electrode and the public bottom electrode of gold/germanium/nickel alloy;
10, with semi-insulating GaAs substrate thinning to 30 ~ 100 micron, carry out tube core and cut apart, accomplish the making of photosensitive element chip.
It is to be noted that in above-mentioned each step, the technology that is adopted, method all are prior aries; The present invention just adopts existing diverse ways in each step; Preparing product workshop section required in each step, is the comprehensive use of existing method, the photosensitive element chip that makes new advances with preparation.
The present invention adopts Finite Difference-Time Domain to divide algorithm that said structure is carried out analog computation, and incident light adopts the Gaussian beam of direction of an electric field perpendicular to the quantum trap growth direction, the result who calculates such as Fig. 3 and shown in Figure 4.Fig. 3 has provided apart from n-GaAs and has gone up 0.2 micron place, contact layer (07) bottom, and multiquantum well region internal electric field direction is parallel to the optical field distribution sketch map of the light wave of quantum trap growth direction.As can beappreciated from fig. 3 transmission grating has obviously changed the incident direction of light, the direction of an electric field of incident light is changed into from vertical and quantum trap growth direction be parallel to the quantum trap growth direction.Fig. 4 has provided in the GaAs/AlGaAs multiple quantum well layer 06 and has gone up the light wave electric field relative intensity at different distance planing surface place, contact layer (07) bottom apart from n-GaAs; In order to contrast; Provided the identical parameters structure simultaneously, but grating thickness is the analysis result of 0.325 micron top reflecting grating.As can beappreciated from fig. 4, bottom of the present invention transmission grating coupling efficiency is obviously greater than traditional top reflecting grating.Compare with the red focal plane of existing SQW photosensitive element chip, the infrared photosensitive element chip of SQW of the present invention has improved the coupling efficiency of grating, further can improve the absorption efficiency of SQW, has strengthened the sensitivity of quantum trap infra-red focus planar array.
Only above-described; Be merely preferred embodiment of the present invention; When not limiting the scope that the present invention implements with this, promptly every simple equivalent of doing according to application range of the present invention and invention description changes and modifies, and all still belongs in the scope that claim of the present invention contains.
Claims (6)
1. bottom coupling grating quantum trap infra-red focus planar photosensitive element chip; It is characterized in that; The transmission grating that is made up of n p type gallium arensidep and golden alternate cycle property arrangement is arranged on gallium arsenide substrate; Contact layer under the n p type gallium arensidep is arranged above the transmission grating, the GaAs/AlGaAs multiple quantum well layer is arranged on the contact layer under the n p type gallium arensidep, contact layer on the n p type gallium arensidep is arranged on the GaAs/AlGaAs multiple quantum well layer; Golden reflector is arranged on the contact layer on the n p type gallium arensidep; Gold has gold/germanium/nickel alloy top electrode above the reflector, and the public bottom electrode of gold/germanium/nickel alloy is arranged on the end of contact layer under the n p type gallium arensidep, under the n p type gallium arensidep on contact layer, GaAs/AlGaAs multiple quantum well layer, the n p type gallium arensidep both sides of contact layer, golden reflector, gold/germanium/nickel alloy top electrode and gold/germanium/public bottom electrode of nickel alloy silicon dioxide passivation layer is arranged.
2. bottom according to claim 1 coupling grating quantum trap infra-red focus planar photosensitive element chip; It is characterized in that, the described transmission grating that constitutes by n p type gallium arensidep and metallic gold periodic arrangement, it highly is d=λ/2n; Wherein λ is a lambda1-wavelength, and n is the refractive index of n p type gallium arensidep.
3. bottom according to claim 1 coupling grating quantum trap infra-red focus planar photosensitive element chip is characterized in that, the described transmission grating that constitutes by n p type gallium arensidep and metallic gold periodic arrangement, and its cycle is p=d, wherein the width of metallic gold is a=d/2.
4. bottom according to claim 1 coupling grating quantum trap infra-red focus planar photosensitive element chip is characterized in that, the described transmission grating that constitutes by n p type gallium arensidep and golden alternate cycle property arrangement, and it is a square hole two-dimension periodic grating.
5. bottom according to claim 1 coupling grating quantum trap infra-red focus planar photosensitive element chip; It is characterized in that; The public bottom electrode of described gold/germanium/nickel alloy; For around whole photosensitive element chip, and the annular of stretching out the photosensitive element chip edge, constitute the public bottom electrode of all pixels in the photosensitive element chip.
6. the preparation method of the described bottom of claim 1 coupling grating quantum trap infra-red focus planar photosensitive element chip is characterized in that, is realized by following steps:
(1), with crystal production technology molecular beam epitaxy, on the semi-insulating GaAs substrate, grow contact layer under the n-GaAs successively, GaAs/AlGaAs multiple quantum well layer, the last contact layer of n-GaAs;
(2), the semi-insulating GaAs substrate is removed, expose contact layer under the n-GaAs, use the ultraviolet photolithographic technology under n-GaAs, to etch optical grating construction on the contact layer with mechanical reduction technology;
(3), on optical grating construction steaming degree metallic gold, and use mechanical reduction technology, metal grating in the formation;
(4), the crystal production technology molecular beam epitaxy that provides with step (1); Growth one deck n-GaAs contact layer on the Semi-insulating GaAs substrate; Use the ultraviolet photolithographic technology on the n-GaAs contact layer, to etch optical grating construction; Steaming degree metallic gold on optical grating construction, and use mechanical reduction technology, form metal grating down;
(5), with the upper and lower metal grating bonding of wafer bonding technology with step (3) and step (4) formation, formation chip structure;
(6), chip structure that step (5) is prepared carries out etching, etching depth reaches that contact layer forms step-like structure under the n-GaAs;
(7), contact layer steaming degree gold reflector on n-GaAs;
(8), in two outgrowth silicon dioxide passivation layer of the upper surface and the step-like structure after step (6) etching of the chip structure that step (5) prepares;
(9), photoetching on silicon dioxide passivation layer, erode away fairlead, and in fairlead steaming degree Au/Ge/Ni, form gold/germanium/nickel alloy top electrode and the public bottom electrode of gold/germanium/nickel alloy;
(10), with semi-insulating GaAs substrate thinning to 30 ~ 100 micron, carry out tube core and cut apart, accomplish the making of photosensitive element chip.
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| CN201110380428XA CN102437228B (en) | 2011-11-25 | 2011-11-25 | Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof |
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| CN201110380428XA CN102437228B (en) | 2011-11-25 | 2011-11-25 | Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof |
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| CN102437228B CN102437228B (en) | 2013-04-17 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762220A (en) * | 2014-01-17 | 2014-04-30 | 中国科学院上海技术物理研究所 | High-linearity degree-of-polarization quantum-well infrared detector with plasmon micro-cavity coupled structure |
| CN104810378A (en) * | 2015-03-08 | 2015-07-29 | 河南理工大学 | Small-sized pixel quantum well infrared focal plane photosensitive element chip |
| CN105355703A (en) * | 2015-11-18 | 2016-02-24 | 南京大学 | Absorption structure of infrared quantum well photoelectric detector |
| CN106946212A (en) * | 2017-05-08 | 2017-07-14 | 河南理工大学 | A kind of surface quantum point humidity sensor chip |
| CN115513310A (en) * | 2022-11-02 | 2022-12-23 | 太原国科半导体光电研究院有限公司 | II-class superlattice infrared detector unit structure, preparation method thereof and II-class superlattice infrared focal plane detector |
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| JPH04369273A (en) * | 1991-06-18 | 1992-12-22 | Fujitsu Ltd | Infrared ray sensor |
| CN101542751A (en) * | 2006-09-29 | 2009-09-23 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor chip and method for producing a semiconductor chip |
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| JPH04369273A (en) * | 1991-06-18 | 1992-12-22 | Fujitsu Ltd | Infrared ray sensor |
| CN101542751A (en) * | 2006-09-29 | 2009-09-23 | 奥斯兰姆奥普托半导体有限责任公司 | Semiconductor chip and method for producing a semiconductor chip |
Non-Patent Citations (2)
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| G. HASNAIN ET AL.: "GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings", 《APPL. PHYS. LETT.》 * |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762220A (en) * | 2014-01-17 | 2014-04-30 | 中国科学院上海技术物理研究所 | High-linearity degree-of-polarization quantum-well infrared detector with plasmon micro-cavity coupled structure |
| CN104810378A (en) * | 2015-03-08 | 2015-07-29 | 河南理工大学 | Small-sized pixel quantum well infrared focal plane photosensitive element chip |
| CN104810378B (en) * | 2015-03-08 | 2018-07-20 | 河南理工大学 | A kind of small size pixel quantum trap infra-red focus planar photosensitive element chip |
| CN105355703A (en) * | 2015-11-18 | 2016-02-24 | 南京大学 | Absorption structure of infrared quantum well photoelectric detector |
| CN105355703B (en) * | 2015-11-18 | 2017-03-22 | 南京大学 | Absorption structure of infrared quantum well photoelectric detector |
| CN106946212A (en) * | 2017-05-08 | 2017-07-14 | 河南理工大学 | A kind of surface quantum point humidity sensor chip |
| CN115513310A (en) * | 2022-11-02 | 2022-12-23 | 太原国科半导体光电研究院有限公司 | II-class superlattice infrared detector unit structure, preparation method thereof and II-class superlattice infrared focal plane detector |
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| CN102437228B (en) | 2013-04-17 |
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