CN105355703B - Absorption structure of infrared quantum well photoelectric detector - Google Patents
Absorption structure of infrared quantum well photoelectric detector Download PDFInfo
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- CN105355703B CN105355703B CN201510801646.4A CN201510801646A CN105355703B CN 105355703 B CN105355703 B CN 105355703B CN 201510801646 A CN201510801646 A CN 201510801646A CN 105355703 B CN105355703 B CN 105355703B
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- 238000010521 absorption reaction Methods 0.000 title abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 230000008878 coupling Effects 0.000 claims abstract description 21
- 238000010168 coupling process Methods 0.000 claims abstract description 21
- 238000005859 coupling reaction Methods 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000010931 gold Substances 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 10
- 230000005684 electric field Effects 0.000 abstract description 18
- 230000005855 radiation Effects 0.000 abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 8
- 230000000737 periodic effect Effects 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 230000009102 absorption Effects 0.000 description 16
- 230000010287 polarization Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
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- 230000002708 enhancing effect Effects 0.000 description 2
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- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
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Abstract
The invention, which belongs to the field of the optical device in sub-wavelength photonics, discloses an absorption structure of an infrared quantum well photoelectric detector. The absorption structure for coupling incident electromagnetic waves to a quantum well active region comprises an upper metal layer, an intermediate semiconductor layer, and a lower metal layer. The upper metal layer is a periodic metal square array, the intermediate semiconductor layer is a quantum well layer, and the lower metal layer is a flat metal plate having a surface with the periodic metal square array. According to the absorption structure, on the basis of coupling of a micro-cavity mode excited by a metal microstructure and a hybridized SSPs mode, absorption of infrared radiation by the quantum well active region can be improved obviously and the electric field component (Ez) that is vital to quantum well absorption and is perpendicular to the quantum well plane is effectively enhanced, thereby overcoming a defect that the traditional quantum well infrared photoelectric detector does not absorb incident infrared radiation. With the structure, the detection efficiency of the ultra-far infrared photoelectric detector can be improved obviously.
Description
Technical field
The present invention relates to a kind of design of infrared quantum trap photodetector absorbing structure, belongs to light in sub-wavelength photonic propulsion
Learn the field of device.The optical absorber structure of specifically related to a kind of metal-semiconductor-metal, can efficient local
Infra-red radiation, and effectively strengthen electric field EzComponent.
Background technology
Infrared Detectorss are a kind of electrooptical devices for infra-red radiation being carried out to high sensitivity sensing, wherein 14-16
Micron very long wave infrared focus plane photodetector is the key technology of sophisticated and futuristic weapons system and the modernization of national defense.Infrared light electrical resistivity survey
Survey device to be divided into according to material system：Mercury cadmium telluride (HgCdTe) system for developing earliest, and develop from eighties of last century the eighties
The quantum trap infrared detector (QWIP) for getting up.It is well known that HgCdTe materials are incited somebody to action in the infrared electro conversion efficiency of very long wave
Drastically reduce, and remain the difficulty on preparing.Compared with Infrared Detectorss prepared by traditional material HgCdTe, quantum
Trap infrared detector can form large area, low-power consumption, low cost, high uniformity and highly sensitive focal plane array (FPA)
Imaging system.Fast development in linear array and focal plane arrays (FPA) application, it is shown that QWIP technologies are in the big face of LONG WAVE INFRARED
Great potential in terms of product focal plane arrays (FPA) and polychrome imaging applications.
But, for N-shaped GaAs (GaAs) QWIP for commonly using, due to the selection rule of quantums absorption, it is merely able to
Absorb electric field component (E of the quantum well region perpendicular to SQW planez).So, in order to improve responsiveness and the detection of device
Rate, it is necessary to carry out optical coupled process to QWIP devices, for example 45 degree of angle laps or Brewster angle geometry designs so can be with
Partial electric-field is made perpendicular to SQW plane.But for two-dimensional imaging focal plane arrays, need incident electromagnetic wave vertically to enter
It is mapped to SQW plane.Therefore using the direction of propagation of the structural change incident illuminations such as one-dimensional, two-dimension periodic grating, unordered grating,
Make it possible to be absorbed by SQW.But, highly efficient method is available with the thought of resonance absorption, by introducing optics
Resonant structure, significantly increases the local electric field intensity in quantum well region, and pointedly improves electric field component (Ez), to carry
The absorption efficiency of high SQW.
Surface plasma excimer (Surface Plasmon Polaritons, SPPs) micro structure system and the super structure of metal
Material system, is increased due to can effectively coupling incident electromagnetic wave to sub-wavelength spatial and can producing very big local electric field
By force, so being all effective optical coupled means.For example, in long wave infrared region, by making traditional similar surfaces plasma
The mode of volume primitive (Spoof surface plasmon, SSPs) and waveguide mode hydridization, produces hydridization SSPs pattern, can be with
The far field that incident electric fields are effectively coupled to waveguide mode and " perfection " is produced absorbs.In addition, one kind is present in metal-dielectric
Microcavity pattern in (quasiconductor)-metal system, is resonated in medium (quasiconductor) microcavity by coupling incident electric fields, Ke Yiyou
The interaction for improving light and material of effect.
The content of the invention
It is an object of the invention to overcome SQW infrared photoelectric detector non-absorbent scarce to the infra-red radiation of normal incidence
Fall into, a kind of absorbing structure is provided for detector, by introducing the coupling of adjustable microcavity pattern and hydridization SSPs pattern, can be significantly
Absorption of the quantum well region that ground is improved to infra-red radiation.
The present invention is achieved by the following technical solutions：
A kind of absorbing structure of infrared quantum trap photodetector, for coupling incident electromagnetic wave to SQW active region
Domain, the absorbing structure include metal level, middle semiconductor layer and lower metal layer, and wherein, upper metal level is periodically gold
Category square array, middle semiconductor layer are quantum well layer, and lower metal layer is metal of the surface with periodicity metal squares array
Flat board.
Further, the middle semiconductor layer also includes cushion, and quantum well layer is arranged on the centre of cushion.
Preferably, the material of the cushion is quasiconductor.
Metal squares array on the metal squares array and lower metal layer of the upper metal level have the identical cycle and
Symmetry.
Preferably, the material of the upper metal level is gold.The material of the lower metal layer is gold.
The above-mentioned metal micro structure system of the present invention supports two kinds of optical modes.Including be present in upper metal level and lower floor gold
Microcavity pattern between category plate, and a kind of hydridization SSPs pattern that lower metal periodic structure is supported.
The resonant wavelength of microcavity pattern is determined by below equationWherein, neffIt is that pattern is effective
Refractive index, m, n are the integers for representing pattern exponent number, and a is the length of side of metal squares in upper metal level.Therefore on can be by adjusting
The length of side of layer metal squares is being conveniently adjusted the resonant wavelength of microcavity pattern.The resonant wavelength of hydridization SSPs pattern is mainly by week
The other structures parameter such as phase is determined.By the optimization of structural parameters, can be microcavity pattern and the resonance wave of hydridization SSPs pattern
Length is adjusted to Same Wavelength position, produces a CGCM.The CGCM can significantly increase quantum well layer to light
Absorption, and strengthen the size of the electric field component perpendicular to SQW plane of quantum well region.
In sum, the present invention can excite SSPs patterns and microcavity pattern, can have by introducing metal micro structure system
The local for realizing light field of effect, improves the absorption efficiency of SQW.The present invention has advantages below：
(1) microcavity resonance mode and the hydridization SSPs resonance mode that can be adjusted is supported, and by way of Mode Coupling,
The absorption efficiency invention for further improving SQW effectively overcomes infrared spoke of the SQW infrared photoelectric detector to normal incidence
Penetrate non-absorbent defect.
(2) cause electromagnetic field by strong local in quantum well region by the coupling of microcavity pattern and hydridization SSPs pattern, show
Improve absorption of the SQW active region to infra-red radiation with writing, and effectively enhance most important to SQW absorption
Perpendicular to the electric field component (E of SQW planez) size.Raising to very far red light electric explorer detection efficient has very
Obvious action.
(3) coupling efficiency of absorbing structure of the present invention is better than other existing microstructure design, and with larger angle
Weak dispersivity and the insensitivity to polarizing.
Description of the drawings
Fig. 1 (a) and (b) be respectively the cross section view of infrared quantum trap photodetector absorbing structure with and side view, its
In, 1- upper stratas gold square array, the upper contact layers of 2-, 3 quantum well layers, contact layer under 4-, 5- is with periodically golden square array
Golden plate, 6-GaAs substrates.
Fig. 2 is the linear spectral line that infrared quantum trap photodetector absorbing structure changes with the upper strata metal squares length of side.
Fig. 3 for (a) hydridization SPPs pattern, (b) microcavity pattern and (c) CGCM electric field z-component absolute value (| Ez
|) in the scattergram of y-z plane.
Fig. 4 is electric field in the distribution of the enhancing size of whole intermediate semiconductor region, is characterized by function F.
Fig. 5 infrared quantum trap photodetector absorbing structure energy absorptions in quantum well layer (QWs) and golden (Au) point
Cloth.
Under the infra-red radiation irradiation of oblique incidence, (a) polarization state is that s- polarizations and (b) polarization state are polarized for p- to Fig. 6
Two kinds in the case of the distribution that changes with incident angle (0 ° -50 °) of coupling efficiency.
Fig. 7 is the distribution that coupling efficiency changes with different polarization angle (0 ° -45 °) under the irradiation of normal incidence infra-red radiation.
Specific embodiment
Below embodiments of the invention are elaborated, the present embodiment is carried out under premised on technical solution of the present invention
Implement, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following enforcements
Example.
As shown in figure 1, the present embodiment is by the optical coupled chamber of metal (gold)-SEMICONDUCTOR-METAL sandwich micro structure.On
Layer metal is defined as a for periodically 1 length of side of gold square array, and lower floor is the golden plate 5 with periodically golden square array, lower floor
The length of side of golden square and thickness are defined as b and t.Upper strata gold square array and lower floor's gold array have identical cycle (p) and right
Title property.Multi layer quantum well is placed in the middle of metal level, and quantum well layer be respectively provided with about 3 certain thickness upper contact layer 2 and under
Contact layer 4.
The period p of array is set to 6.9 μm, GaAs multiple quantum trap thickness degree be 400nm, upper and lower gallium arsenide semiconductor
(GaAs) thickness of contact layer is respectively 200nm and 300nm, and the upper strata gold square length of side is 1.6 μm, and lower floor's gold square length of side is
3.5μm。
As seen from Figure 2 in the present embodiment, there are two kinds of absworption peaks on absorption spectrum, one keeps for resonant wavelength
In 14.5 μm of hydridization SSPs pattern, another is microcavity pattern of the resonant wavelength with upper strata gold square length of side a change, herein mould
Formula exponent number be m=1, n=0 or m=0, n=1.When length of side a by changing upper strata gold square so that microcavity pattern and hydridization
The resonant wavelength of SSPs patterns is in Same Wavelength position, thus form one and absorbs higher CGCM, this mode of resonance
Formula goes out the absworption peak with 92% at 14.5 μm, and compared to microcavity pattern and hydridization SSPs pattern, absorption efficiency is higher.
Electric fields of the Fig. 3 for hydridization SSPs pattern, microcavity pattern and CGCM | Ez| in the scattergram of y-z plane.Its
The golden square length of side is set to when a=2.4 μm in absorption line at the middle and upper levels corresponding to Fig. 2 for middle hydridization SSPs pattern and microcavity pattern,
Two absworption peaks of 14.5 μm and 19.2um, CGCM corresponding to Fig. 2 the golden square length of side is set to a=1.6 μm at the middle and upper levels when
14.5 μm of absworption peak in absorption line.
The absorption be given in above-mentioned calculating derives from two parts altogether, and a part is to producing light by quantum well region absorption
Electric current beneficial part, another part are by the part of upper and lower two-layer gold absorption loss.Fig. 4 is measured in giving the present embodiment
Sub- well area and gold absorb distribution, it can be seen that most energy be by quantum well region absorb, small part energy be by
What gold had been lost.
Strengthen distribution of the size in quantum well region diverse location in order to characterize electric field z durection components compared to in-field,
Defined functionS is the distance apart from upper strata Jin-interface herein, E0For incident IR radiation
Electric field intensity, EzIt is the size in quantum well region induction field intensity z durection component.Fig. 5 gives function F to be changed with s
Curve, it can thus be seen that in whole semiconductor regions, electric field EzCompared to incident electric fields E0There are very big reinforced effects,
In quantum well layer, function F is 6 holding left and right.
As in SQW, the size of generation photoelectric current and whole quantum well region are average | Ez|2Size be directly proportional, because
This can define coupling efficiencyTo characterize the reinforced effects that this metal micro structure system is detected to SQW,
Integral domain is whole quantum well region herein.In the case of being presented in Fig. 6 p-polarization and s polarizations, different incidence angles coupling effect
The X-Y scheme that rate η changes with incident wavelength.It can thus be seen that under the irradiation of normal incidence infra-red radiation, coupling at 14.5 μm
It is 6 or so that efficiency has a peak value.In a research work in nearest (in March, 2015) (S.Wang, W.Tian, F.Wu,
J.Zhang,J.Dai,Z.Wu,Y.Fang,Y.Tian,and C.Q.Chen,“Efficient optical coupling in
AlGaN/GaN quantum well infrared photodetector via quasi-one-dimensional gold
Grating, " Opt.Express (2015) 23 (7), 8740-8748), one-dimensional metal optical grating construction is devised, by coupling office
Field surface phasmon and surface plasmon polariton are improving SQW absorption efficiency, but its coupling efficiency is only
0.85, the present invention is greatly improved by coupling hydridization SPPs pattern and microcavity pattern, coupling efficiency.Simultaneously with incidence
In the case of the change of angle, p-polarization and s polarizations, the coupling efficiency of the present invention all keeps very high enhancing to imitate in the range of 40 °
Really.
Fig. 7 gives coupling efficiency changes with polarization angle and incident wavelength under the irradiation of normal incidence infra-red radiation two
Dimension figure.It can thus be seen that this metal micro structure system aligns incident IR radiation and does not have polarization sensitivity.
Claims (5)
1. a kind of absorbing structure of infrared quantum trap photodetector, for coupling incident electromagnetic wave to SQW active region,
Characterized in that, the absorbing structure includes metal level, middle semiconductor layer and lower metal layer, wherein, upper metal level is week
The metal squares array of phase property, middle semiconductor layer are quantum well layer, and lower metal layer is that surface carries periodicity metal squares battle array
The metal plate of row；Metal squares array on the metal squares array and lower metal layer of the upper metal level has identical week
Phase and symmetry.
2. the absorbing structure of a kind of infrared quantum trap photodetector according to claim 1, it is characterised in that in described
Between semiconductor layer also include cushion, quantum well layer is arranged on the centre of cushion.
3. the absorbing structure of a kind of infrared quantum trap photodetector according to claim 2, it is characterised in that described slow
The material for rushing layer is quasiconductor.
4. the absorbing structure of a kind of infrared quantum trap photodetector according to one of claims 1 to 3, its feature exist
In the material of the upper metal level is gold.
5. the absorbing structure of a kind of infrared quantum trap photodetector according to one of claims 1 to 3, its feature exist
In the material of the lower metal layer is gold.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437228A (en) * | 2011-11-25 | 2012-05-02 | 河南理工大学 | Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof |
| CN102593201A (en) * | 2011-12-06 | 2012-07-18 | 复旦大学 | Polychrome quantum well photon detecting device based on surface plasma micro cavity |
| CN102709346A (en) * | 2012-05-16 | 2012-10-03 | 复旦大学 | Light detector of semiconductor quantum well |
| CN104332510A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437228A (en) * | 2011-11-25 | 2012-05-02 | 河南理工大学 | Quantum well infrared focal plane photosensitive element chip with grating in bottom coupling mode and preparation method thereof |
| CN102593201A (en) * | 2011-12-06 | 2012-07-18 | 复旦大学 | Polychrome quantum well photon detecting device based on surface plasma micro cavity |
| CN102709346A (en) * | 2012-05-16 | 2012-10-03 | 复旦大学 | Light detector of semiconductor quantum well |
| CN104332510A (en) * | 2014-10-16 | 2015-02-04 | 中国科学院上海技术物理研究所 | Subwavelength plasmonic microcavity light coupling structure for promoting photoelectric detector response |
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