CN205039169U - A infrared focal plane of waveband selection nature reinforcing quantum well for hyperspectral imager - Google Patents
A infrared focal plane of waveband selection nature reinforcing quantum well for hyperspectral imager Download PDFInfo
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Abstract
The utility model discloses an infrared focal plane of waveband selection nature reinforcing quantum well for hyperspectral imager. To wait from the excimer microcavity integratedly to QWIP focal plane pixel, the incident photon can be caught effectively to this microcavity, is waiting its local for fabry - perot of forming transverse propagation in excimer microcavity standing wave that resonates to thereby turn into the responsiveness performance that the photocurrent promoted the focal plane device with the QWIP coupling in the microcavity. The center wavelength of resonance standing wave depends on the geometry of microcavity, and the not unidimensional microcavity of design preparation will make the pixel on the focal plane pixel of difference response peak wavelength is diverse also, forms the waveband selection nature response of pixel. Distribute the wave band of selecting on the focal plane pixel with high spectrum beam split wave band, the selectivity that the pixel responsiveness of each wave band got during messenger hyperspectral imager used promotes correspondingly to promote the detection sensitivity of whole hyperspectral imager focal plane.
Description
Technical field
This patent relates to the infrared focal plane detector in high light spectrum image-forming application, the responsiveness of quantum trap infrared detector being carried out to band selective enhancing, specifically refers to that the optical coupling of phasmon microcavity strengthens the high light spectrum image-forming quantum trap infra-red focus planar device of responsiveness.
Background technology
Spectrum analysis, especially infrared spectrum analysis, can reflect the atom of testee and the information of molecular vibration, discloses its index such as microstructure and chemical composition, therefore becomes a kind of important means in physicism.Spectral imaging technology is a kind of emerging photonics image detection technology, also the corresponding spectral distribution of this object is detected while detection of a target object optical intensity distributions, be similar to the red, green, blue three look detection on color digital camera to a certain extent, just the wave band of spectrum divides and wants much meticulous.The existing image resolution ability of light spectrum image-forming, there is again spectrally resolved ability, the shape of Quick Measurement and object analysis and spectrum can form simultaneously, realize, to the location of object and structure and constituent analysis, having broad application prospects in fields such as target identification, remote sensing and medical diagnosiss.
According to the wave band resolution capability of spectrum, namely waveband width is divided by centre wavelength, is expressed as △ λ/λ, and spectral imaging technology can be divided into multispectral, that EO-1 hyperion and ultraphotic spectrum etc. are different imaging level.The magnitude of △ λ/λ ~ 0.1 is called multispectral by usual people, and △ λ/λ ~ 0.01 magnitude is called EO-1 hyperion, and △ λ/λ ~ 0.001 magnitude is called that ultraphotic is composed, and realizes especially by grating beam splitting or narrow band pass filter.From multispectral to EO-1 hyperion, ultraphotic spectrum, the division of wave band is more and more thinner, and the spectral resolution of imaging is also more and more higher.But thing followed problem is narrowing of wave band causes the number of photons that can arrive detector in single waveband channels fewer and feweri, makes the response of detector also correspondingly weakened.In order to realize the highly sensitive detection under high spectral resolution, necessarily requiring corresponding detector to have higher detectivity, can realize, when incident light subnumber reduces, also there is enough responding abilities.
At infrared band, now widely used highly-sensitive detector mainly contains mercury cadmium telluride (HgCdTe, MCT) detector and AlGaAs/GaAs quantum well detector (QWIP).QWIP device is due to mature and stable in material preparation and device technology, there is the advantages such as large-area uniformity, rate of finished products is high, materials and devices key parameter controllability is good, be particularly suitable for preparing long wave 8-12 μm, the focus planardetector of very long wave 12-16 mu m waveband.But the working mechanism of QWIP comes from quantum well intersubband transitions, the low density of states of the sub-band energy level of its intrinsic causes the absorption of light more weak, and the photon major part inciding photosensitive unit can not be absorbed, but photosensitive unit of escaping out.In addition, due to the quantum mechanics selection rule of intersubband transitions, quantum-well materials can not absorb the photon of vertical incidence, and current QWIP focal plane device changes mainly through dielectric grating coupled structure the wave vector coupling that the direction of propagation of incident light realizes intersubband transitions.Because dielectric grating can not show resonance characteristics to optical coupling, therefore coupling efficiency is lower.In order to improve the coupling efficiency of QWIP device to incident light, the present inventor once devised a kind of subwavelength plasmon microcavity coupled structure, utilized its sunken luminous effect and Fabry-Perot (F-P) resonance effects can realize the lifting of QWIP response device rate 160 times.Relevant number of patent application is: 201410546873.2, patent name: the subwavelength plasmon microcavity optical coupling structure promoting photodetector photoresponse.The essential characteristic of this structure is made up of the quantum well active layer in the middle of the metal stick of bottom complete metal and top layer periodic arrangement clamps, its spacing is within the scope of near field, upper and lower metal surface evanescent wave, therefore upper and lower layer metal is coupled, and forms light field longitudinally equally distributed pattern.And in the horizontal, the border of single metal stick forms the boundary reflection layer of impedance mismatching, the standing wave of F-P resonance is formed between light field two interfaces, incident photon is trapped in this microcavity and forms gathering of local light, and increase the effective light path in quantum well by propagating back and forth of standing wave, therefore from increasing efficient intensity and extending the light absorption that absorption length two aspects improve quantum well, photoelectric respone rate is increased dramatically.
On this basis, the present inventor finds further, can be regulated the resonant wavelength of this microcavity coupled structure by the live width changing upper strata metal stick.Particularly, the microcavity coupled structure of different resonant wavelength is produced on the different pixels of same focal plane chip, then forms the selectivity resonance of different-waveband, obtain single pixel or the pixel row of Selective long-range DEPT.It is corresponding with the light-splitting device in Hyperspectral imaging devices, namely can realize carrying out high sensitivity detection under the prerequisite of the spectrally resolved ability guaranteeing EO-1 hyperion.Because the opto-electronic conversion active material adopted in the pixel array of whole focal plane is identical, there is the optical absorption characteristics of same intrinsic.And band selective response involved in the present invention strengthens the resonant wavelength selectivity that coupled structure has physical dimension decision, the resonant wavelength structure that order gradually changes on different pixel can be designed to.On the optical absorption characteristics of same intrinsic, consequently superpose the mode characteristic of a resonant check, and carry out tuning according to the wave band that EO-1 hyperion divides to resonant wavelength.Incident light is after EO-1 hyperion beam splitter, although the total number of photons arriving detector pixel is restricted due to light splitting, but because the photoresponse detecting pixel is improved targetedly, still can realize guaranteeing that the high sensitivity spectrum imaging under high spectral resolution detects.
Summary of the invention
The object of this patent is quantum trap infrared detector (QWIP) focal plane device that a kind of band selective for high light spectrum image-forming application of proposition strengthens responsiveness, solves the problem that in current high light spectrum image-forming detection focal plane, the pixel response of formation is more weak because the total number of photons arriving detector pixel after light splitting reduces.Incident light can be trapped in microcavity and form gathering and standing wave resonance of light field by described phasmon micro-cavity structure, and resonance tuning wavelength can be carried out by regulating the live width of upper strata metal stick, and then the response reached for point optical band strengthens, match with an EO-1 hyperion point optical band, the final overall performance improving hyperspectral imager.
The phasmon microcavity that this patent adopts carries out the structure of optical coupling, its structure for incident light through successively for sequence successively: upper strata metal array layer 1, QWIP focal plane pixel 2, lower metal reflector 3.
Described metal array layer 1 for the cycle be p, live width is s, thickness is the metal array of h1.Its dimension comprises a peacekeeping two-dimensional array, and its material includes but not limited to gold or the silver of high conductivity.In order to improve its adhesion, can add the stickiness metal that a layer thickness is 0 ~ 30 nanometer between itself and focal plane pixel 2, its material includes but not limited to titanium.The optimum results that the numerical value of its period p, live width s and thickness h 1 is obtained by theory calculate determines, optimize the local surface pattern generation resonance coupling that the target calculated is the phasmon that incident light wave is formed with electronics collective oscillation in metal, enter under the induction of resonance mode in coupled micro-cavity, form horizontal standing-wave cavity mould pattern.
Described QWIP focal plane pixel 2 is the general pixel in QWIP focal plane, and functional layer contained by pixel is followed successively by N-shaped doped with Al GaAs barrier layer, N-shaped doping upper electrode layer, GaAs/AlGaAs quantum well active layer, N-shaped doping lower electrode layer from top to bottom.The optimum results that its thickness h 2 is obtained by theory calculate determines, optimizing the target calculated is that the horizontal standing wave mode that the electromagnetic wave be coupled in micro-cavity structure is formed reaches the strongest.According to the requirement of phasmon microcavity near-field coupling, h2 must be less than the equivalent optical wavelength of detected incident light, and the optical wavelength namely in vacuum is divided by the refractive index of this layer of material.When minimum value for refractive index is 3, h2 should be not more than detection wavelength 1/3rd in media as well.
Described lower metal reflector 3 refers to that one deck covers the metal level bottom pixel table top, its thickness h 3 is not less than subduplicate 0.0048 times of the detection wavelength in units of micron, its width L should cover whole pixel table tops as far as possible thus form phasmon microcavity with metal squares as much as possible, and this layer of material includes but not limited to gold or the silver of high conductivity.In order to improve its adhesion, can add the stickiness metal that a layer thickness is 0 ~ 30 nanometer between itself and focal plane pixel 2, its material includes but not limited to titanium.
Described band selective strengthens and refers to that each pixel on focal plane chip or the metal array layer (1) on every row/column pixel have different live width s, and resonance wave band corresponding to its size comprises the centre wavelength of EO-1 hyperion light splitting.Different live width s is corresponding different resonance centre wavelength, can sequentially arrange, also can random distribution.
This patent based on operation principle be: for the one dimension designed by specific photodetection wavelength or two-dimensional metallic bar block array, the phasmon that the collective oscillation of electronics in metal stick is formed can with incident light generation resonance coupling.Upper strata metal stick and the acting in conjunction of lower metal reflector, new modulation is defined to the distribution of light field, make to be coupled into light wave in microcavity along quantum well plane propagation, and form the chamber mould of standing wave form, light field is caused to be limited among microcavity, prevent the escape of photon, drastically increase the utilance of incident photon.Such as: get for structural parameters the Finite Element Method calculating that metal live width s is 5.9 microns, corresponding resonant wavelength is 14.4 microns and show, can be absorbed by quantum well the photon with z component electrical field producing photoelectric current in phasmon microcavity optical coupling structure will by local in metal squares region, when incident light electric field is taken as unit value 1, in microcavity, the numerical value of z component electrical field square is the highest can reach 76.4, reflects high concentration and the enhancing of light field.
The resonant wavelength of coupling cavity mould is determined by following equation:
Wherein λ
kfor resonant wavelength, n
efffor the equivalent refractive index of MEDIUM Q WIP, s is the live width of metal stick, and K is resonance mode exponent number.The direction of propagation of chamber mould is transformed into by the z direction perpendicular to detector plane in free space propagates along detector plane direction, and is transformed into photoelectric current after being absorbed by the active coating in QWIP pixel.From chamber mould resonance formula, at selected resonance progression K and micro-cavity wave-guide medium equivalent refractive index n
effwhen, this chamber mould resonant wavelength is proportional to metal stick live width s, changes upper strata metal live width and just can regulate and control chamber mould resonant wavelength.By designing a series of focal plane pixel with different live width s, the resonant wavelength of each pixel will form series change, and namely strengthened wave band forms series change.Be designed to match with point optical band in imaging spectral technology, then in each corresponding point optical band, the spectral response of detector pixel all will obtain a desirable lifting, and then promotes the overall performance of imaging spectrometer.
The advantage of this patent is:
Phasmon microcavity is integrated in the pixel of QWIP focal plane by 1, utilize the plasmon resonance between upper strata metal array and lower metal reflector, incident photon is caught by microcavity, be trapped in microcavity the enhancing forming local light, and constantly absorbed by quantum well thus form photoelectric current, the responsiveness finally causing infrared focus plane to detect pixel is greatly enhanced.In an embodiment of the present invention, peak wavelength on the same chip can be realized in 13.0-15.2 micrometer range, improve 5.3 ~ 12.3 times compared to the responsiveness of standard 45 degree of angle lap coupled modes.
2 phasmon microcavity coupled structure chamber mould resonant wavelengths realize by changing metal live width, and by being integrated on different focal plane pixels by the phasmon microcavity of a series of different metal live width, the responsiveness making it correspond to different-waveband strengthens.In an embodiment of the present invention, single Intrinsic Gettering peak value wavelength can be realized resonance peak wavelength on same chip at the quantum trap infrared detector of 13.6 microns to strengthen at the band selective of 13.0-15.2 micrometer range.A point optical band for itself and imaging spectrometer is matched, finally obtains the significant increase of focal plane device responsiveness in different narrow wave bands, be applicable to high light spectrum image-forming application.
Accompanying drawing explanation
Fig. 1 is that the band selective being applicable to high light spectrum image-forming of this patent embodiment strengthens the single pixel schematic diagram of quantum trap infra-red focus planar.1: the two-dimensional array that upper strata metal squares is formed, 2: focal plane QWIP pixel, 3: lower metal reflector, 4: inverse bonding interconnected indium post layer.
Fig. 2 is the single file pixel local arrangements schematic diagram being applicable to the band selective enhancing quantum trap infra-red focus planar of high light spectrum image-forming of this patent embodiment, and focal plane pixel array interconnects via indium bump bonding and readout circuit chip.Microcavity upper strata metal live width s order change on each pixel row, correspond to the order change of resonant wavelength, also correspond to the order change of pixel response peak wavelength.
Fig. 3 is the QWIP pixel of grade from microcavity optical coupling and the responsiveness spectrum of 45 ° of angle lap devices thereof of the not wide s of upper layer metal wire in this patent embodiment one.Improve 5.3 ~ 12.3 times respectively compared to the responsiveness of standard 45 degree of angle lap coupled modes in 13.0-15.2 micrometer range.
Fig. 4 is that the grade of the not wide s of upper layer metal wire in this patent embodiment one is composed from the normalized response rate of the QWIP device of microcavity optical coupling, and can realize the tuning of 13.0-15.2 micrometer range internal resonance peak wavelength on the same chip, tuning capability is more than 14%.
Embodiment
Strengthen resonant wavelength for the responsiveness of the phasmon microcavity optical coupling structure regulation and control GaAs/AlGaAs focal plane of quantum trap infrared detecter by Two dimensional Distribution below, by reference to the accompanying drawings the embodiment of this patent is described in further detail.
The present embodiment adopts GaAs/Al
xga
l-xas quantum well QWIP focus planardetector material, adopts the coupled structure embodiment of different size parameter to prove feasibility of the present invention and validity by three.Wherein gauge parameter h1, h2 and h3 immobilize, and change period p and the live width s of upper strata two-dimensional metallic array.
The phasmon microcavity optical coupling structure of the lifting QWIP focal plane performance involved by the present embodiment, comprising: metal squares array layer 1, be the cycle is p, live width is s, thickness is the metal array of h1.The metal adopted in the present embodiment is gold, and thickness h 1 gets 100 nanometers.In order to improve its adhesion, between itself and focal plane pixel 2, addition of layer of metal 20 nano-titanium.Metal array 1 is prepared by thin film deposition method, and forms raster graphic by photoetching and corrosion.
Focal plane pixel 2, from top to bottom respectively: molecular layers thick is the N-shaped Doped GaAs upper electrode layer of 190 nanometers, and doping content is 2.0 × 10
17cm
-3; Molecular layers thick is the Al of 100 nanometers
xga
l-xthe upper barrier layer of As, wherein x=0.15; Molecular layers thick is the N-shaped Doped GaAs potential well layer of 7 nanometers, and doping content is 2.0 × 10
17cm
-3; Molecular layers thick is the Al of 100 nanometers
xga
l-xas lower barrierlayer, wherein x=0.15; Molecular layers thick is the N-shaped Doped GaAs lower electrode layer of 190 nanometers, and doping content is 2.0 × 10
17cm
-3; Molecular layers thick is the N-shaped doped with Al of 300 nanometers
xga
1-xas barrier layer, x=0.4.The gross thickness of 6 sublayers forms h2, and its value is 887 nanometers, namely 0.887 micron.
Lower metal reflector 3, described example is TiAu layer, Ti thickness is 50 nanometers, Au thickness is 300 nanometers, AuGeNiAu layer in focal plane device is placed in the region in 5 microns × 5 microns, the lower right corner of pixel table top, in order to form multiple phasmon microcavity with metal squares, the described metallic reflector length of side should as far as possible close to pixel mesa dimensions, and the present embodiment length of side L gets 23 microns.This layer of metallic reflector is prepared by thin film deposition method.
Embodiment one: by designing different live width s for multiple pixel to reach the resonant wavelength of the different enhancing responsiveness of regulation and control, upper strata metal is two-dimensional metallic square array, live width s gets 7 different numerical value, be respectively 5.1,5.3,5.5,5.7,5.9,6.1,6.3 microns, the peak wavelength of corresponding pixel photoresponse is respectively 13.0,13.5,13.8,14.1,14.4,14.8,15.2 microns.The numerical value of period p keep 10 microns constant.
Embodiment two: the resonant wavelength reaching the different enhancing responsiveness of regulation and control by designing different live width s for multiple pixel, upper strata metal is one-dimensional metal striped array, live width s gets 7 different numerical value, be respectively 5.1,5.3,5.5,5.7,5.9,6.1,6.3 microns, corresponding resonant wavelength is respectively 13.0,13.5,13.8,14.1,14.4,14.8,15.2 microns.The value of period p is s+2 micron.
Embodiment three: the resonant wavelength reaching the different enhancing responsiveness of regulation and control by designing different live width s, upper strata metal is a single metal stripe, live width s gets 7 different numerical value, be respectively 5.1,5.3,5.5,5.7,5.9,6.1,6.3 microns, corresponding resonant wavelength is respectively 13.0,13.5,13.8,14.1,14.4,14.8,15.2 microns.Each pixel only places a phasmon microcavity.
The result that above-mentioned three embodiments obtain is close, gives the experimental results of embodiment one in accompanying drawing 3,4.
Fig. 3 is the QWIP device of the phasmon microcavity optical coupling that in this patent embodiment one, actual measurement obtains and 45 degree of angle lap device responsiveness spectrum of standard.Because the photon of quantum well to vertical incidence does not absorb, 45 degree of angle lap devices are therefore adopted to demarcate the enhancing effect of coupled structure to quantum trap infrared detector as normal component.Can find out, the QWIP of the phasmon microcavity optical coupling of different live widths has the effect of band selective enhancing, live width s is respectively 5.1,5.3,5.5,5.7,5.9,6.1,6.3 microns, and corresponding resonant wavelength is respectively 13.0,13.5,13.8,14.1,14.4,14.8,15.2 microns.The detector photocurrent response rate of phasmon microcavity coupled structure resonance wave strong point is 5.3 times, 7.7 times, 8.5 times, 8.6 times, 8.8 times, 11.4 times and 12.3 times of 45 degree of angle lap devices respectively.This result absolutely proves that phasmon microcavity optical coupling structure proposed by the invention can realize strengthening the band selective of quantum well responsiveness.
Fig. 4 is the normalized response rate spectrum of the QWIP device of the phasmon microcavity optical coupling of the not wide s of upper layer metal wire in this patent embodiment one, can see, tuning in 13.0-15.2 micrometer range of resonant wavelength between the different pixels that can realize same chip, tuning capability is more than 14%.If divide optical band corresponding tuning the and EO-1 hyperion of this resonance wave band in the application of high light spectrum image-forming focus planardetector, the explorer response rate of corresponding point of optical band can be improved, realize guaranteeing that the high sensitivity spectrum imaging under high spectral resolution detects.
Above-described specific embodiment; the object of this patent, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of this patent; be not limited to this patent; within all spirit at this patent and principle, any amendment made, equivalent replacement, improvement etc., within the protection range that all should be included in this patent.
Claims (4)
1. the band selective for high light spectrum image-forming strengthens quantum trap infra-red focus planar, its structure is: pass through successively for sequence is metal array layer (1) successively with incident light, QWIP focal plane pixel (2), lower metal reflector (3), focal plane inverse bonding interconnected indium post layer (4), is characterized in that:
In described metal array layer (1), its array element comprises metal squares or bonding jumper, when metal squares, is the metal squares array of the two-dimension periodic arrangement that the cycle is p, live width is s, thickness is h1; When bonding jumper, it is the bonding jumper array of the One Dimension Periodic arrangement that the cycle is p, live width is s, thickness is h1; The numerical value of described period p is not more than focal plane pixel centre-to-centre spacing 14-30 micron, the scope of described live width s be detection wavelength 10/10 to ten/10ths between, described thickness h 1 should be not less than subduplicate 0.0048 times of the detection wavelength in units of micron.
2. a kind of band selective being applicable to high light spectrum image-forming according to claim 1 strengthens quantum trap infra-red focus planar, it is characterized in that: in described QWIP focal plane pixel (2), functional layer contained by pixel is followed successively by N-shaped doped with Al GaAs barrier layer, N-shaped doping upper electrode layer, GaAs/AlGaAs quantum well active layer, N-shaped doping lower electrode layer from top to bottom, and the numerical value of its pixel thickness h 2 should be not more than 1/3rd of detection wavelength in the dielectric layer.
3. a kind of band selective being applicable to high light spectrum image-forming according to claim 1 strengthens quantum trap infra-red focus planar, it is characterized in that: the thickness h 3 of described lower metal reflector (3) is not less than subduplicate 0.0048 times of the detection wavelength in units of micron, its width L should cover pixel table top as far as possible thus as much as possiblely form phasmon microcavity with metal squares.
4. a kind of band selective being applicable to high light spectrum image-forming according to claim 1 strengthens quantum trap infra-red focus planar, it is characterized in that: the metal array layer (1) on each pixel on focal plane chip or often row/column pixel has different live width s, resonance wave band corresponding to its size comprises the centre wavelength of EO-1 hyperion light splitting, different live width s can sequentially arrange, also can random distribution.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161564A (en) * | 2015-09-22 | 2015-12-16 | 中国科学院上海技术物理研究所 | Waveband selective enhancement quantum well infrared focal plane applied to hyperspectral imaging |
| CN107170786A (en) * | 2017-05-27 | 2017-09-15 | 广州新视界光电科技有限公司 | Array base palte, display panel, the preparation method of display device and array base palte |
| CN109449237A (en) * | 2018-10-17 | 2019-03-08 | 东南大学 | Based on thermionic multi-layered patterned electrooptical device of phasmon and preparation method thereof |
| CN111584671A (en) * | 2020-04-23 | 2020-08-25 | 中国科学院上海技术物理研究所 | High-performance narrow-band infrared detector based on microcavity resonance frequency selection |
-
2015
- 2015-09-22 CN CN201520736394.7U patent/CN205039169U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161564A (en) * | 2015-09-22 | 2015-12-16 | 中国科学院上海技术物理研究所 | Waveband selective enhancement quantum well infrared focal plane applied to hyperspectral imaging |
| CN107170786A (en) * | 2017-05-27 | 2017-09-15 | 广州新视界光电科技有限公司 | Array base palte, display panel, the preparation method of display device and array base palte |
| CN109449237A (en) * | 2018-10-17 | 2019-03-08 | 东南大学 | Based on thermionic multi-layered patterned electrooptical device of phasmon and preparation method thereof |
| CN111584671A (en) * | 2020-04-23 | 2020-08-25 | 中国科学院上海技术物理研究所 | High-performance narrow-band infrared detector based on microcavity resonance frequency selection |
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