CN108134006A - A kind of LED light encapsulating structure - Google Patents
A kind of LED light encapsulating structure Download PDFInfo
- Publication number
- CN108134006A CN108134006A CN201810047426.0A CN201810047426A CN108134006A CN 108134006 A CN108134006 A CN 108134006A CN 201810047426 A CN201810047426 A CN 201810047426A CN 108134006 A CN108134006 A CN 108134006A
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- layer
- dielectric layer
- beam splitter
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- fluorescent
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- 239000010410 layer Substances 0.000 claims abstract description 74
- 239000000843 powder Substances 0.000 claims abstract description 23
- 239000012790 adhesive layer Substances 0.000 claims abstract description 22
- 238000005538 encapsulation Methods 0.000 claims abstract description 10
- 238000005253 cladding Methods 0.000 claims abstract 2
- 239000002245 particle Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910003087 TiOx Inorganic materials 0.000 claims description 6
- 239000000395 magnesium oxide Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 5
- -1 calcirm-fluoride Chemical compound 0.000 claims description 5
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 4
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000008240 homogeneous mixture Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 238000007733 ion plating Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000006378 damage Effects 0.000 abstract description 5
- 210000001508 eye Anatomy 0.000 abstract description 5
- 238000010304 firing Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 210000001525 retina Anatomy 0.000 description 3
- 208000002177 Cataract Diseases 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 208000003164 Diplopia Diseases 0.000 description 1
- 208000035719 Maculopathy Diseases 0.000 description 1
- YJPIGAIKUZMOQA-UHFFFAOYSA-N Melatonin Natural products COC1=CC=C2N(C(C)=O)C=C(CCN)C2=C1 YJPIGAIKUZMOQA-UHFFFAOYSA-N 0.000 description 1
- 208000032436 Retinal depigmentation Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 208000003464 asthenopia Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000005252 bulbus oculi Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 208000002780 macular degeneration Diseases 0.000 description 1
- DRLFMBDRBRZALE-UHFFFAOYSA-N melatonin Chemical compound COC1=CC=C2NC=C(CCNC(C)=O)C2=C1 DRLFMBDRBRZALE-UHFFFAOYSA-N 0.000 description 1
- 229960003987 melatonin Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004423 myopia development Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000028327 secretion Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000003860 sleep quality Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 208000024891 symptom Diseases 0.000 description 1
- 208000029257 vision disease Diseases 0.000 description 1
- 230000004393 visual impairment Effects 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
Abstract
The present invention provides a kind of LED encapsulation structure, including LED chip, beam splitter layer, fluorescent adhesive layer, the light-emitting surface of the fluorescent adhesive layer cladding LED chip and side, the beam splitter layer is coated on fluorescent adhesive layer, beam splitter layer can reflect high energy shortwave and penetrate other light, and structure of the present invention can improve the utilization rate of blue light, be conducive to inside LED chip to the firing rate of fluorescent powder, harmful blue light leakage is avoided to damage eyes, reduces eye illness incidence.
Description
Technical field
The present invention relates to technical field of LED light illumination, and in particular, to a kind of LED light encapsulating structure.
Background technology
LED has the remarkable advantages such as long lifespan, energy-saving and environmental protection, is widely used in as one of new and effective solid light source
The fields such as traffic light system, street lamp and automotive lighting, LED, which shines, at present mainly uses high energy shortwave blue light excitated fluorescent powder
Technology forms a kind of complex light, but high energy shortwave blue light is big to retina damage degree, easily causes retinal pigment epithelium
Atrophy it is even dead, the death of photaesthesia cell will cause visual impairment even to completely lose, and this damage is irreversible
, blue light also results in maculopathy, and the crystalline in human eye can absorb that some blue light is gradually muddy to form cataract, and big portion
The blue light of part can penetrate crystalline, and especially children's crystalline is limpider, can not effectively keep out blue light, so as to be easier to lead to Huang
Pinta becomes and cataract, and since the wavelength of blue light is short, focus point is not to fall in foveal region of retina position, but from retina
The position of any is located further forward, to see, eyeball can be in tension for a long time, causes visual fatigue, prolonged vision
Fatigue, easily serial, attention can not collect medium symptom when may lead to people's myopia development, diplopia occur, read, and influence people
Study and working efficiency, blue light can also inhibit the secretion of melatonin, influence the sleep quality of people.
Invention content
The technical problem to be solved in the present invention is to provide one kind can reflect blue light to fluorescent adhesive layer, improve in fluorescent adhesive layer
Fluorescent powder firing rate, and the LED light encapsulating structure of other light other than blue light can be penetrated.
For solution more than technical problem, the present invention provides following technical solution：
A kind of LED encapsulation structure, including pot LED chip, beam splitter layer, fluorescent adhesive layer, the fluorescent adhesive layer coats LED chip
Light-emitting surface and side, the beam splitter layer be coated on fluorescent adhesive layer, which is characterized in that beam splitter layer can reflect high energy shortwave blue light
And penetrate other light.
Wherein, LED chip is one kind in formal dress, upside-down mounting or vertical stratification.
Realize above technical scheme, beam splitter layer is containing there are two types of structures；
Wherein, the beam splitter layer is made of one layer of dielectric layer of the inside containing particle or multilayer dielectricity layer stacks,
The particle size of the particle is λ/4, and spacing between particle and dielectric layer are λ/20~λ/4, the grain size of particle
Size is directly proportional to thickness of dielectric layers, and ratio is 1:10~1:In the range of 1, the light refractive index of particle is more than in the dielectric layer
Or the light refractive index less than dielectric layer other parts, used by particle and dielectric layer material be magnesia, yttrium oxide, vulcanization
Zinc, zinc selenide, GaAs, magnesium fluoride, calcirm-fluoride, aluminium oxide, SiOx, TiOx or Nb2It is one or more in Ox, and particle with
Material used in dielectric layer is different materials.
Wherein, the beam splitter layer is stacked by the dielectric layer that the nonmetallic materials of multilayer different refractivity are formed, medium
The thickness of layer is between λ/10~λ/4, and the nonmetallic materials are magnesia, yttrium oxide, zinc sulphide, zinc selenide, GaAs, fluorine
Change magnesium, calcirm-fluoride, aluminium oxide, SiOx, TiOx or Nb2One or more of Ox.
Wherein, the dielectric layer by technique for vacuum coating, colloidal sol-gel film film-forming process and/self-organizing film into
Membrane process is made, wherein, the technique for vacuum coating include physical/chemical vapor deposition, evaporation coating, magnetron sputtering plating,
Ion plating and epitaxial growth.
In more than structure, the fluorescent adhesive layer is epoxy resin, one of which adhesive and fluorescence in silicones or ink
The homogeneous mixture of powder raw material.
Phosphor raw material is yellow YAG phosphor, yellow TAG fluorescent powders, green aluminate fluorescent powder, red silicate are glimmering
Light powder or nitride red fluorescent powder it is one or more.
Compared with prior art, the beneficial effects of the invention are as follows：The utilization rate of blue light is improved, is conducive to inside LED chip
To the firing rate of fluorescent powder, harmful blue light leakage is avoided to damage eyes, reduces eye illness incidence.
Description of the drawings
Fig. 1 is LED lamp structure schematic diagram of the present invention；
Fig. 2 is the first beam splitter layer fundamental diagram of LED lamp structure of the present invention；
Fig. 3 is second of beam splitter layer fundamental diagram of LED lamp structure of the present invention；
Fig. 4 is after beam splitter layer, and the light of different wave length penetrates situation map.
Wherein：1.LED chips, 2. fluorescent adhesive layers, 3. beam splitter layers, 4. white lights, 31. dielectric layers, 32. particles, 41. high energy are short
Wave blue light, the light of 42. other colors.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in inventive embodiments is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, the every other reality that those of ordinary skill in the art are obtained without making creative work
Example is applied, shall fall within the protection scope of the present invention.
As shown in Figure 1, a kind of LED encapsulation structure, including LED chip 1, fluorescent adhesive layer 2, beam splitter layer 3, fluorescent adhesive layer 2 wraps
Light-emitting surface and the side of LED chip 1 are covered, beam splitter layer 3 is coated on fluorescent adhesive layer 2, and LED chip 1 is preferably formal dress, upside-down mounting or hangs down
One kind in straight structure, the beam splitter layer 3 is made of one layer dielectric layer 31 of the inside containing particle 32 or multilayer dielectricity layer 31
Stack, the particle size of the particle 32 is λ/4, and spacing between particle 32 and dielectric layer be λ/20~λ/
4, the particle size of particle 32 is directly proportional to thickness of dielectric layers, and ratio is 1:10~1:In the range of 1, the dielectric layer endoparticle 32
Light refractive index be more than or less than dielectric layer other parts light refractive index.The fluorescent adhesive layer 2 is epoxy resin, silicon tree
The homogeneous mixture of the adhesive such as fat or ink and phosphor raw material, wherein phosphor raw material are yellow YAG phosphor, yellow
TAG fluorescent powders, green aluminate fluorescent powder, red silicate fluorescent powder or nitride red fluorescent powder it is one or more.
Material is magnesia, yttrium oxide, zinc sulphide, zinc selenide, GaAs, magnesium fluoride, calcirm-fluoride, oxidation used by grain and dielectric layer
Aluminium, SiOx, TiOx or Nb2It is one or more in Ox, and particle 32 and material used in dielectric layer 31 are different materials.
Wherein, dielectric layer 31 passes through technique for vacuum coating, colloidal sol-gel film film-forming process and/self-organizing forming thin film
Technique is made, wherein, the technique for vacuum coating include physical/chemical vapor deposition, evaporation coating, magnetron sputtering plating, from
Son plating and epitaxial growth.
In more than structure, beam splitter layer 3 one layer dielectric layer 31 of the inside containing particle in addition to being made of or multilayer dielectricity layer
32 stack outside, can also be that the stacking of dielectric layer 33 that multilayer is formed by the different nonmetallic materials of refractive index is formed, are situated between
The thickness of matter layer 33 is between λ/10~λ/4, and nonmetallic materials are magnesia, yttrium oxide, zinc sulphide, zinc selenide, GaAs, fluorine
Change magnesium, calcirm-fluoride, aluminium oxide, SiOx, TiOx or Nb2One or more of Ox.
Fig. 2 uses the fundamental diagram in the case of the internal dielectric layer containing particle for beam splitter layer of the present invention, can from figure
Know, the blue light that LED chip is sent out first passes around fluorescent adhesive layer excitated fluorescent powder and generates yellow photons, and yellow photons are compound with blue light
White light 4 is formed, still, when passing through fluorescent adhesive layer due to the blue light that LED chip is sent out, it is impossible to not have completely for excitated fluorescent powder
It can be radiated in beam splitter layer 3 across fluorescent adhesive layer for the light of excitated fluorescent powder, beam splitter layer 3 is due to its structure function, in addition to height
The light 42 of other outer colors of energy shortwave blue light can pass through beam splitter layer 3, and high energy shortwave blue light 41 cannot be reflexed to through beam splitter layer 3
For excitated fluorescent powder in fluorescent adhesive layer 2, the firing rate of fluorescent powder is improved, simultaneously as most of blue light 41 will not shed
To outside lamp, it is possible to reduce the injury to human body.
Fig. 3 is beam splitter layer 3 of the present invention using the work in the case of the dielectric layer 33 of the nonmetallic materials formation of different refractivity
Make schematic diagram, operation principle is as the beam splitter layer 3 using the internal dielectric layer 31 containing particle.
Fig. 4 is after beam splitter layer, and the light of different wave length is through situation, it can be seen from the figure that wavelength is 400-
The light transmission rate of 445nm is minimum, and transmitance is less than 10%, and the light of other wavelength can pass through, particularly wavelength 460nm
Above light percent of pass reaches 90%, therefrom illustrates that beam splitter layer is high to high energy shortwave blu-ray reflection rate, and to other substantially not
Transmitting, which can occur, to be penetrated.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understanding without departing from the principles and spirit of the present invention can carry out these embodiments a variety of variations, modification, replace
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a kind of LED encapsulation structure, including LED chip, beam splitter layer, fluorescent adhesive layer, the hair of the fluorescent adhesive layer cladding LED chip
Smooth surface and side, the beam splitter layer are coated on fluorescent adhesive layer, which is characterized in that beam splitter layer reflects high energy shortwave blue light and transmission
Other light.
2. a kind of LED encapsulation structure according to claim 1, which is characterized in that LED chip is formal dress, upside-down mounting or vertical
One kind in structure.
3. a kind of LED encapsulation structure according to claim 1, which is characterized in that the beam splitter layer contains particle by inside
One layer of dielectric layer form or multilayer dielectricity layer stacks, the particle size of the particle is λ/4, and between particle
The thickness of spacing and dielectric layer is λ/20~λ/4, and the particle size of particle is directly proportional to thickness of dielectric layers, and ratio is 1:10
~1:In the range of 1, the light refractive index of particle is more than or less than the light refractive index of dielectric layer other parts in the dielectric layer,
Material is magnesia, yttrium oxide, zinc sulphide, zinc selenide, GaAs, magnesium fluoride, calcirm-fluoride, oxygen used by particle and dielectric layer
Change aluminium, SiOx, TiOx or Nb2One or more of Ox, and particle and material used in dielectric layer are different materials.
4. a kind of LED encapsulation structure stated according to claim 1, which is characterized in that the beam splitter layer is by multilayer different refractivity
Nonmetallic materials formed dielectric layer stack, between λ/10~λ/4, the nonmetallic materials are the thickness of dielectric layer
Magnesia, yttrium oxide, zinc sulphide, zinc selenide, GaAs, magnesium fluoride, calcirm-fluoride, aluminium oxide, SiOx, TiOx or Nb2In Ox
It is one or more of.
5. a kind of LED encapsulation structure stated according to claim 1, which is characterized in that the dielectric layer by technique for vacuum coating,
Colloidal sol-gel film film-forming process and/self-organizing forming thin film technique is made, wherein, the technique for vacuum coating include physics/
Chemical vapor deposition, evaporation coating, magnetron sputtering plating, ion plating and epitaxial growth.
6. according to a kind of LED encapsulation structure described in claim 1-5 any one, which is characterized in that the fluorescent adhesive layer is
The homogeneous mixture of one of which adhesive and phosphor raw material in epoxy resin, silicones or ink.
7. a kind of LED encapsulation structure according to claim 6, which is characterized in that phosphor raw material is yellow YAG fluorescence
Powder, yellow TAG fluorescent powders, green aluminate fluorescent powder, red silicate fluorescent powder or nitride red fluorescent powder one kind or
It is a variety of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810047426.0A CN108134006A (en) | 2018-01-18 | 2018-01-18 | A kind of LED light encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810047426.0A CN108134006A (en) | 2018-01-18 | 2018-01-18 | A kind of LED light encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108134006A true CN108134006A (en) | 2018-06-08 |
Family
ID=62399798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810047426.0A Pending CN108134006A (en) | 2018-01-18 | 2018-01-18 | A kind of LED light encapsulating structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN108134006A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109185721A (en) * | 2018-09-30 | 2019-01-11 | 深圳市光科全息技术有限公司 | A kind of anti-blue light LED lamp structure |
| CN109946881A (en) * | 2019-04-19 | 2019-06-28 | 深圳市中深光电股份有限公司 | A kind of liquid crystal display die set of front light source |
| WO2021104399A1 (en) * | 2019-11-26 | 2021-06-03 | 深圳市中光工业技术研究院 | Fluorescent ceramic and preparation method therefor, light-emitting device, and projection device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437275A (en) * | 2011-12-27 | 2012-05-02 | 杭州浙大三色仪器有限公司 | Semiconductor light-emitting device |
| CN106772747A (en) * | 2016-12-26 | 2017-05-31 | 深圳市光科全息技术有限公司 | A kind of optical film and preparation method thereof |
| CN208173624U (en) * | 2018-01-18 | 2018-11-30 | 深圳市光科全息技术有限公司 | A kind of LED light encapsulating structure |
-
2018
- 2018-01-18 CN CN201810047426.0A patent/CN108134006A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437275A (en) * | 2011-12-27 | 2012-05-02 | 杭州浙大三色仪器有限公司 | Semiconductor light-emitting device |
| CN106772747A (en) * | 2016-12-26 | 2017-05-31 | 深圳市光科全息技术有限公司 | A kind of optical film and preparation method thereof |
| CN208173624U (en) * | 2018-01-18 | 2018-11-30 | 深圳市光科全息技术有限公司 | A kind of LED light encapsulating structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109185721A (en) * | 2018-09-30 | 2019-01-11 | 深圳市光科全息技术有限公司 | A kind of anti-blue light LED lamp structure |
| CN109946881A (en) * | 2019-04-19 | 2019-06-28 | 深圳市中深光电股份有限公司 | A kind of liquid crystal display die set of front light source |
| WO2021104399A1 (en) * | 2019-11-26 | 2021-06-03 | 深圳市中光工业技术研究院 | Fluorescent ceramic and preparation method therefor, light-emitting device, and projection device |
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