CN209544389U - A kind of flip LED chips - Google Patents
A kind of flip LED chips Download PDFInfo
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- CN209544389U CN209544389U CN201920426879.4U CN201920426879U CN209544389U CN 209544389 U CN209544389 U CN 209544389U CN 201920426879 U CN201920426879 U CN 201920426879U CN 209544389 U CN209544389 U CN 209544389U
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Abstract
The utility model discloses a kind of flip LED chips, including substrate, the light emitting structure that is set to substrate surface, set on substrate back go out light film layer and fluorescent powder and encapsulation glue in light film layer out, wherein, the refractive index < of encapsulation glue goes out the refractive index of the refractive index < substrate of light film layer, the light transmittance of the light film layer out is greater than 90%, and the light film layer out is equipped with multiple holes.The utility model passes through substrate, goes out light film layer and encapsulates the mutual cooperation of glue, utilize different optical indexs and the hole in light film layer out, reduce the total reflection of substrate, more light are induced to out in light film layer, furthermore, the hole in light film layer can allow more light to overflow from light film layer out out, increase the light extraction efficiency of chip, improve the brightness of chip.
Description
Technical field
The utility model relates to LED technology field more particularly to a kind of flip LED chips.
Background technique
Light emitting diode (Light-Emitting Diode, LED) with energy conservation and environmental protection, safety durable, photoelectricity due to turning
The features such as rate is high, controllability is strong, is widely used in the related fieldss such as display, automotive lighting, general illumination backlight.
Flip LED chips are novel state LED chips in recent years, and major function is no encapsulation procedure, substantially saves
Prouctiveness can be applicable in high current, can be further realized the LED chip of the small mini kenel of ultra micro.
The light that flip LED chips issue needs to be emitted after reflecting layer is reflected using substrate, on luminous efficacy, by
In the relationship of secondary optics reflection, light extraction efficiency is lower；Further, since fluorescent powder and encapsulation glue are coated on substrate, it is easy
Flip LED chips are caused the impure problem of side leakage blue problem and photochromism occur.
Summary of the invention
Technical problem to be solved by the utility model is to provide a kind of flip LED chips, and chip light-emitting efficiency is high,
Light emitting angle is few.
In order to solve the above-mentioned technical problem, the utility model provides a kind of flip LED chips, including substrate, is set to
The light emitting structure of substrate surface goes out light film layer and fluorescent powder and packaging plastic in light film layer out set on substrate back
Water, wherein encapsulate glue refractive index < go out light film layer refractive index < substrate refractive index, it is described go out light film layer light transmittance
Greater than 99%, the integral multiple for going out a length of light thicknesses of layers out of light wave of light emitting structure.
As an improvement of the above scheme, the light film layer out is made of translucent material.
As an improvement of the above scheme, the light film layer out is single or multi-layer structure.
As an improvement of the above scheme, it is described go out light film layer include that first be sequentially arranged on substrate goes out photosphere, second goes out
Photosphere and third go out photosphere, wherein encapsulate glue refractive index < third go out photosphere refractive index < second go out photosphere refraction
Rate < first goes out the refractive index of the refractive index < substrate of photosphere.
As an improvement of the above scheme, the substrate is Sapphire Substrate, and the light film layer out includes being sequentially arranged in blue treasured
The first Al on stone lining bottom2O3Layer, the 2nd Al2O3Layer and the 3rd Al2O3Layer, wherein encapsulate the 3rd Al of refractive index < of glue2O3
The 2nd Al of refractive index < of layer2O3The first Al of refractive index < of layer2O3The refractive index of the refractive index < substrate of layer.
As an improvement of the above scheme, the substrate is Sapphire Substrate, and the light film layer out includes being sequentially arranged in blue treasured
Al on stone lining bottom2O3Layer, SiO2Layer and MgF2Layer, wherein encapsulate the refractive index < MgF of glue2Layer < SiO2Layer < Al2O3Layer
The refractive index of < substrate.
As an improvement of the above scheme, the light film layer out is equipped with hole, and described hole is passed through from the surface of light film layer out
It wears to the inside of light film layer out, alternatively, described hole is through to substrate back from the surface of light film layer out, alternatively, described hole
The surface of substrate is through to from the surface of light film layer out.
As an improvement of the above scheme, the light emitting structure include the first semiconductor layer, active layer, the second semiconductor layer,
Transparency conducting layer, reflecting layer, first electrode and second electrode, first electrode setting on the first semiconductor layer, described the
Two electrodes are arranged on reflecting layer.
Implement the utility model, has the following beneficial effects:
The utility model forms one layer between substrate and fluorescent powder and goes out light film layer, and makes to show that the refractive index of light film layer is small
In substrate refractive index and be greater than encapsulation glue refractive index.The utility model passes through substrate, out light film layer and encapsulation glue
It cooperates, using different optical indexs and the hole in light film layer out, reduces the total reflection of substrate, more light are induced
Onto light film layer out, in addition, the hole in light film layer can allow more light to overflow from light film layer out out, increase chip goes out light
Efficiency improves the brightness of chip.
Compared with existing flip-chip, since the utility model reduces the total reflection of substrate by going out light film layer, from
And the light emitting angle of chip is reduced, increase the Axial-running Out light of chip, and then the side wall that can reduce chip goes out light, it is blue to reduce leakage.
In addition, the utility model is first surface-treated the back side of substrate, increase light-emitting angle, then by being lower than substrate
Photoinduction reduces total reflection into light film layer out by the light film layer that goes out of refractive index, from there through being surface-treated and light film layer out
It cooperates, the light emitting angle of chip is reduced while improving chip light-emitting efficiency, anti-leak-stopping is blue.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model first embodiment flip LED chips；
Fig. 2 is the light schematic diagram out of existing flip LED chips；
Fig. 3 is the light schematic diagram out of the utility model flip LED chips；
Fig. 4 is the schematic diagram of the utility model light emitting structure；
Fig. 5 is the structural schematic diagram of the utility model second embodiment flip LED chips；
Fig. 6 is the structural schematic diagram of the flip LED chips of the utility model 3rd embodiment；
Fig. 7 is the structural schematic diagram of the flip LED chips of the four or three embodiment of the utility model.
Specific embodiment
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Type is described in further detail.
Referring to Fig. 1, a kind of flip LED chips provided by the utility model including substrate 10, are set to 10 surface of substrate
Light emitting structure 20 goes out light film layer 30 and fluorescent powder and encapsulation glue in light film layer 30 out set on substrate back 10
40, wherein encapsulate glue refractive index < go out light film layer refractive index < substrate refractive index, it is described go out light film layer light transmittance
Greater than 90%, the integral multiple for going out a length of light thicknesses of layers out of light wave of light emitting structure.
The utility model forms one layer between substrate and fluorescent powder and goes out light film layer, and makes to show that the refractive index of light film layer is small
In substrate refractive index and be greater than encapsulation glue refractive index.The utility model passes through substrate, out light film layer and encapsulation glue
It cooperates, reduces the total reflection of substrate, more light are induced to out in light film layer, to improve the light extraction efficiency of chip.
According to the mutually long formula d=k λ/2n of interference1K=1,2 ..., and interference cancellation formula d=(2k+1) λ/4n1K=0,
1,2 ..., it is known that, as d=λ/4n1Or d=3 λ/4n1When, i.e. the thickness of light film layer=(wavelength)/(4* goes out the folding of light film layer out
Penetrate rate) when, i.e., out light wave it is a length of go out light thicknesses of layers integral multiple when, light could be induced to out light from substrate by light film layer out
Film layer, to play the role of antireflective.
Further, referring to figs. 2 and 3, compared with existing flip-chip, since the utility model is by going out light film layer
The total reflection of substrate is reduced, to reduce the light emitting angle of chip, increases the Axial-running Out light of chip, and then chip can be reduced
Side wall go out light, it is blue to reduce leakage.
In order to guarantee the refraction effect and light-out effect of light film layer out, the light transmittance that the utility model goes out light film layer must be big
In 99%, if the light transmittance of light film layer is less than 99% out, the light extraction efficiency of chip reduces instead.Therefore, the light film layer out
It is made of translucent material, the translucent material is by Al2O3、SiO2、SiNx、MgF2、TiO2And Ti2O5One or more of be made.
The material of the utility model substrate 10 can be sapphire, silicon carbide or silicon, or other semiconductor materials.
Preferably, the substrate 10 of the utility model is Sapphire Substrate.
Referring to fig. 4, the light emitting structure 20 include the first semiconductor layer 21, it is active layer 22, the second semiconductor layer 23, transparent
Conductive layer 24, reflecting layer 25, first electrode 26 and second electrode 27, the first electrode 26 are arranged in the first semiconductor layer 21
On, the second electrode 27 is arranged on reflecting layer 25.
First semiconductor layer 21 provided by the utility model is n type gallium nitride base, and the second semiconductor layer 23 is p-type nitridation
Gallium base, active layer 22 are MQW quantum well layer.
The material of the transparency conducting layer 24 is indium tin oxide, but not limited to this.The ratio of indium and tin in indium tin oxide
Example is (70-99): (1-30).Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Electrically conducting transparent is favorably improved in this way
The conductive capability of layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
The reflecting layer 25 of the utility model can be Bragg reflecting layer, or metallic reflector.Preferably, described
Reflecting layer 25 is metallic reflector.The fluorescent powder and encapsulation glue of the utility model are current material, wherein encapsulate the folding of glue
Penetrating rate is 1.4-1.5, and the refractive index of Sapphire Substrate is 1.7, and therefore, the refractive index of light film layer is 1.4-1.7 out.
It should be noted that the light film layer 30 that goes out of the utility model can be single layer structure, or multilayered structure,
The light extraction efficiency of middle multilayered structure is due to single layer structure.
Preferably, it is described go out light film layer include that first be sequentially arranged on substrate goes out photosphere, second goes out photosphere and third and go out
Photosphere, wherein encapsulate glue refractive index < third go out photosphere refractive index < second go out photosphere refractive index < first go out light
The refractive index of the refractive index < substrate of layer.Above-mentioned three-decker go out light film layer, every layer of refractive index successively from one side of substrate to
Encapsulation glue side is successively decreased, and compared with the light film layer out of single layer structure, the refractive index of light film layer out is successively decreased, can be further
Total reflection is reduced, light extraction efficiency is improved.If the structure of light film layer is more than three layers out, the light out of part can be blocked and absorb, instead
Reduce the light extraction efficiency of chip.Compared with the light film layer out of single layer, the light emission rate for going out light film layer of three-decker can improve 5%.
Preferably, the first refractive index for going out photosphere is 1.6-1.7, and the second refractive index for going out photosphere is 1.5-1.6, and third goes out
The refractive index of photosphere is 1.4-1.5.
More preferably, since existing LED chip generally uses sapphire to act on substrate, in order to save cost and letter
The light film layer that goes out of chemical industry skill, the utility model includes the first Al being sequentially arranged in Sapphire Substrate2O3Layer, the 2nd Al2O3Layer and
3rd Al2O3Layer, wherein encapsulate the 3rd Al of refractive index < of glue2O3The 2nd Al of refractive index < of layer2O3The refractive index < the of layer
One Al2O3The refractive index of the refractive index < substrate of layer.Light even film layer uses Al due to substrate and out2O3, therefore lining can be reduced
Stress between bottom and out light film layer, further, since first goes out that photosphere, second to go out photosphere and third to go out photosphere be uniformly Al2O3,
Formed when, only need to adjust Al and O ratio and every layer go out photosphere thickness, can be adjusted every layer go out photosphere refractive index, adopt
Go out light film layer with above structure, structure, simple process and low cost are easy to produce.
As another preferred embodiment of light film layer out, the light film layer out includes the Al being sequentially arranged in Sapphire Substrate2O3
Layer, SiO2Layer and MgF2Layer, wherein encapsulate the refractive index < MgF of glue2Layer < SiO2Layer < Al2O3The refractive index of layer < substrate.
Al2O3Layer is used as bottom, is arranged in substrate and SiO2Between layer, play the role of buffering and undertaking；SiO2Layer in refractive index and
More preferably effect can be obtained between thickness；MgF2Layer is easier to obtain lower refractive index, and thickness can be smaller, while having again
There is better light transmittance.
As the preferred embodiment of the utility model, light film layer 30 is equipped with multiple holes out, by more light from out
Light film layer is overflowed, and is increased the light extraction efficiency of chip, is improved the brightness of chip.
Referring to Fig. 5, described hole 31 can from the surface etch of light film layer 30 out to the inside of light film layer 30 out, alternatively,
Referring to Fig. 6, described hole 31 can be through to 10 back side of substrate from the surface of light film layer 30 out, alternatively, referring to Fig. 7, the hole
Hole can be through to the surface of substrate 10 with 31 from the surface of light film layer 30 out.The etching that the utility model goes out the hole of light film layer is deep
Degree plays important influence to the light emission rate of chip, wherein light emission rate > Fig. 5 of the chip of light emission rate > Fig. 6 of the chip of Fig. 7
Chip light emission rate.
In addition, the diameter of the hole of light film layer also plays important influence to the light emission rate of chip out, it is preferred that active layer
Go out a length of hole diameter of light wave integral multiple.If hole diameter is related to the integral multiple of optical wavelength out, light is easier to escape
Out, chip brightness is higher.
Correspondingly, the utility model additionally provides a kind of production method of flip LED chips, comprising the following steps:
S101, light emitting structure is formed on the surface of substrate；
The material of the utility model substrate 10 can be sapphire, silicon carbide or silicon, or other semiconductor materials.
Preferably, the substrate 10 of the utility model is Sapphire Substrate.
The light emitting structure 20 includes the first semiconductor layer 21, active layer 22, the second semiconductor layer 23, transparency conducting layer
24, reflecting layer 25, first electrode 26 and second electrode 27, the first electrode 26 is arranged on the first semiconductor layer 21, described
Second electrode 27 is arranged on reflecting layer 25.
First semiconductor layer 21 provided by the utility model is n type gallium nitride base, and the second semiconductor layer 23 is p-type nitridation
Gallium base, active layer 22 are MQW quantum well layer.
The material of the transparency conducting layer 24 is indium tin oxide, but not limited to this.The ratio of indium and tin in indium tin oxide
Example is (70-99): (1-30).Preferably, the ratio of indium and tin is 95:5 in indium tin oxide.Electrically conducting transparent is favorably improved in this way
The conductive capability of layer, prevents carrier from flocking together, and also improves the light extraction efficiency of chip.
The reflecting layer 25 of the utility model can be Bragg reflecting layer, or metallic reflector.Preferably, described
Reflecting layer 25 is metallic reflector.The fluorescent powder and encapsulation glue of the utility model are current material, wherein encapsulate the folding of glue
Penetrating rate is 1.4-1.5, and the refractive index of Sapphire Substrate is 1.7, and therefore, the refractive index of light film layer is 1.4-1.7 out.
S102, the back side of substrate is surface-treated；
By the way of the punching of grinding and polishing, roughening, plasma etching, chemical attack, laser or drill bit, to the back of substrate
Face is handled, so that the back side of substrate is smooth, coarse or have patterned concave-convex hole, to increase the beam angle of substrate
Degree.
In addition, being surface-treated by the back side to substrate, light film layer can also be preferably formed out, makes to obtain light film
Layer preferably adheres on substrate.
S103, light film layer is formed out at the back side of substrate；
Using vapor deposition, sputtering or it is coated by the way of at the back side of substrate form out light film layer.Wherein, the refraction of glue is encapsulated
Rate < goes out the refractive index of the refractive index < substrate of light film layer, and the light transmittance of the light film layer out is greater than 90%.
It is described go out light film layer can be single layer structure, or multilayered structure, wherein the light extraction efficiency of multilayered structure by
In single layer structure.
Preferably, it is described go out light film layer include that first be sequentially arranged on substrate goes out photosphere, second goes out photosphere and third and go out
Photosphere, wherein encapsulate glue refractive index < third go out photosphere refractive index < second go out photosphere refractive index < first go out light
The refractive index of the refractive index < substrate of layer.Above-mentioned three-decker go out light film layer, every layer of refractive index successively from one side of substrate to
Encapsulation glue side is successively decreased, and total reflection can be further reduced, and improves light extraction efficiency.If the structure of light film layer is more than three layers out, meeting
The light out for blocking and absorbing part, reduces the light extraction efficiency of chip instead.Compared with the light film layer out of single layer, three-decker goes out
The light emission rate of light film layer can improve 5%.
More preferably, since existing LED chip generally uses sapphire to act on substrate, in order to save cost and letter
The light film layer that goes out of chemical industry skill, the utility model includes the first Al being sequentially arranged in Sapphire Substrate2O3Layer, the 2nd Al2O3Layer and
3rd Al2O3Layer, wherein encapsulate the 3rd Al of refractive index < of glue2O3The 2nd Al of refractive index < of layer2O3The refractive index < the of layer
One Al2O3The refractive index of the refractive index < substrate of layer.Light even film layer uses Al due to substrate and out2O3, therefore lining can be reduced
Stress between bottom and out light film layer, further, since first goes out that photosphere, second to go out photosphere and third to go out photosphere be uniformly Al2O3,
Formed when, only need to adjust Al and O ratio and every layer go out photosphere thickness, can be adjusted every layer go out photosphere refractive index, adopt
Go out light film layer with above structure, structure, simple process and low cost are easy to produce.
As another preferred embodiment of light film layer out, the light film layer out includes the Al being sequentially arranged in Sapphire Substrate2O3
Layer, SiO2Layer and MgF2Layer, wherein encapsulate the refractive index < MgF of glue2Layer < SiO2Layer < Al2O3The refractive index of layer < substrate.
S104 simultaneously performs etching light film layer out, forms multiple holes；
Light film layer out is performed etching using laser or chemical etching technology, forms multiple holes.Specifically, described hole
From the surface etch of light film layer out to the inside of light film layer out, alternatively, described hole is through to substrate from the surface of light film layer out
The back side, alternatively, described hole is through to the surface of substrate from the surface of light film layer out.
The diameter of the hole for going out light film layer of the utility model also plays important influence to the light emission rate of chip, preferably
, the integral multiple for going out a length of hole diameter of light wave of active layer.If hole diameter is related to the integral multiple of optical wavelength out, light
It more easily escapes, chip brightness is higher.
S105, fluorescent powder and encapsulation glue are coated in light film layer out；
Glue in the fluorescent powder of the surface of light film layer out coating predetermined amount and is encapsulated using conventional technique.Wherein, fluorescence
Powder and encapsulation glue are existing material, and the utility model is not specifically limited.
The utility model forms one layer between substrate and fluorescent powder and goes out light film layer, and makes to show that the refractive index of light film layer is small
In substrate refractive index and be greater than encapsulation glue refractive index.The utility model passes through substrate, out light film layer and encapsulation glue
It cooperates, using different optical indexs and the hole in light film layer out, reduces the total reflection of substrate, more light are induced
Onto light film layer out, in addition, the hole in light film layer can allow more light to overflow from light film layer out out, increase chip goes out light
Efficiency improves the brightness of chip.
Compared with existing flip-chip, since the utility model reduces the total reflection of substrate by going out light film layer, from
And the light emitting angle of chip is reduced, increase the Axial-running Out light of chip, and then the side wall that can reduce chip goes out light, it is blue to reduce leakage.
In addition, the utility model is first surface-treated the back side of substrate, increase light-emitting angle, then by being lower than substrate
Photoinduction reduces total reflection into light film layer out by the light film layer that goes out of refractive index, from there through being surface-treated and light film layer out
It cooperates, the light emitting angle of chip is reduced while improving chip light-emitting efficiency, anti-leak-stopping is blue.
Above disclosed is only a kind of preferred embodiment of the utility model, certainly cannot be practical to limit with this
Novel interest field, therefore equivalent variations made according to the claim of the utility model still belong to what the utility model was covered
Range.
Claims (8)
1. a kind of flip LED chips, which is characterized in that including substrate, the light emitting structure that is set to substrate surface, be set to substrate and carry on the back
Face goes out light film layer and fluorescent powder and encapsulation glue in light film layer out, wherein the refractive index < for encapsulating glue goes out light
The refractive index of the refractive index < substrate of film layer, the light transmittance of the light film layer out are greater than 99%, and the light wave out of light emitting structure is a length of
The integral multiple of light thicknesses of layers out.
2. flip LED chips as described in claim 1, which is characterized in that the light film layer out is made of translucent material.
3. flip LED chips as claimed in claim 2, which is characterized in that the light film layer out is single or multi-layer structure.
4. flip LED chips as claimed in claim 3, which is characterized in that the light film layer out includes being sequentially arranged on substrate
First go out photosphere, second go out photosphere and third and go out photosphere, wherein the refractive index < third for encapsulating glue goes out the refractive index of photosphere
The refractive index < first that < second goes out photosphere goes out the refractive index of the refractive index < substrate of photosphere.
5. flip LED chips as claimed in claim 4, which is characterized in that the substrate is Sapphire Substrate, the light film out
Layer includes the first Al being sequentially arranged in Sapphire Substrate2O3Layer, the 2nd Al2O3Layer and the 3rd Al2O3Layer, wherein encapsulation glue
The 3rd Al of refractive index <2O3The 2nd Al of refractive index < of layer2O3The first Al of refractive index < of layer2O3The refractive index < substrate of layer
Refractive index.
6. flip LED chips as claimed in claim 4, which is characterized in that the substrate is Sapphire Substrate, the light film out
Layer includes the Al being sequentially arranged in Sapphire Substrate2O3Layer, SiO2Layer and MgF2Layer, wherein encapsulate the refractive index < MgF of glue2
Layer < SiO2Layer < Al2O3The refractive index of layer < substrate.
7. flip LED chips as described in claim 1, which is characterized in that the light film layer out is equipped with hole, described hole
The inside of light film layer is through to out from the surface of light film layer out, alternatively, described hole is through to substrate from the surface of light film layer out
The back side, alternatively, described hole is through to the surface of substrate from the surface of light film layer out.
8. flip LED chips as described in claim 1, which is characterized in that the light emitting structure includes the first semiconductor layer, has
Active layer, the second semiconductor layer, transparency conducting layer, reflecting layer, first electrode and second electrode, the first electrode are arranged first
On semiconductor layer, the second electrode is arranged on reflecting layer.
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| CN201920426879.4U CN209544389U (en) | 2019-03-29 | 2019-03-29 | A kind of flip LED chips |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935674A (en) * | 2019-03-29 | 2019-06-25 | 佛山市国星半导体技术有限公司 | A kind of flip LED chips and preparation method thereof |
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