CN201466055U - Light-emitting diode structure with multiple film-penetrating window superposition layers - Google Patents
Light-emitting diode structure with multiple film-penetrating window superposition layers Download PDFInfo
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- CN201466055U CN201466055U CN2009200737440U CN200920073744U CN201466055U CN 201466055 U CN201466055 U CN 201466055U CN 2009200737440 U CN2009200737440 U CN 2009200737440U CN 200920073744 U CN200920073744 U CN 200920073744U CN 201466055 U CN201466055 U CN 201466055U
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- emitting diode
- light emitting
- multilayer film
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Abstract
The utility model discloses a light-emitting diode structure with multiple film-penetrating window superposition layers, which comprises a light-emitting diode wafer consisting of a basic plate, a first semi-conductor layer, an active layer, a second semi-conductor layer, a transparent conducting layer, a first electrode arranged above the first semiconductor layer, a second electrode whose one part is arranged above the second semi-conductor layer and the transparent conducting layer, at least one first transparent superposition layer which covers on the external side of the light-emitting diode wafer and has the low refractive index, and at least one second transparent superposition layer which covers on the external side of the first transparent superposition layer and have the low refractive index. The light-emitting diode water can emit light with more than two types of wavelengths, and can improve the permeability of light with different wavelengths, thereby increasing the light output rate of the light-emitting diode.
Description
Technical field
The utility model relates to a kind of light-emitting diode, particularly a kind of light emitting diode construction of multilayer film penetration window coating.
Background technology
At present, III-V group-III nitride light-emitting diode series is since nineteen ninety-five delivers, fine ratio of product and benefit are along with technology is in recent years constantly improved, and developed light-emitting diode blueness in the three primary colors on visible light spectrum, more and then the colour mixture white light emitting diode of deriving, blue light-emitting diode indispensable critical elements in the white light emitting diode now especially wherein, no matter be that blue light adds the plan of gold-tinted like white light, or add the white light that green glow and blue light are mixed with ruddiness, all be the important application of III-V group-III nitride light-emitting diode.
See also shown in Figure 1A and Figure 1B, general LED wafer comprises a sapphire substrate 11, n type gallium nitride layer 12, InGaN multiple quantum trap 13, P type gallium nitride layer 14, N type electrode 15 and P type electrode 16, encapsulate an encapsulated layer 17 again, when light is launched by InGaN multiple quantum trap 13, light there is no certain orientation and propagates, light emission direction is for from all directions, so only some penetrates via the top, be that general front is got photo structure and caused luminous taking-up efficient low, so known light-emitting diode can only send approximately the light less than half from the surface, wherein also some can be subjected to the light tight of P type electrode or absorb and lose, and because white light is by indigo plant at present, green, red light luminescent layer makes up, perhaps the doping fluorescent powder is to reach the luminous of white light, yet has only single encapsulated layer encapsulation white light emitting diode at present, because it is blue, green, ruddiness is for its penetrance difference of encapsulated layer of different refractivity, and known technology is blue because use single encapsulated layer therefore to reduce, green, the mixed light intensity of ruddiness.
Moreover, TW letters patent number: 229954, patent name: III-V group-III nitride light-emitting diode flip chip structure and manufacture method thereof with multilayer film reflection layer, a kind of III-V group-III nitride light-emitting diode flip chip structure that it disclosed with multilayer film reflection layer, it is to utilize a multilayer film reflection layer, with the continuous intertonguing of the material of two kinds of different refractivity coefficients and overlayed on the top of coating layer and described nesa coating under the described n type gallium nitride, contact with the part of described P type electrode, and contact with the part of described N type electrode and described N type ohmic contact layer.It is applied to flip chip structure with the multilayer film reflection layer, and is that reflection ray is used.
So a kind of light-emitting diode is as its mixing R, G, when the B three primary colors send white light, because the light of three kinds of wavelength is also different with respect to the penetrance of encapsulated layer, so when the multiple light of lumination of light emitting diode, the taking-up efficient that how to increase light is key subjects in fact.
The utility model content
The technical problem that this practicality will solve is to provide a kind of light emitting diode construction with multilayer film penetration window coating, takes out efficient with the light that increases light-emitting diode, and fine-tuning photochromic.
For solving the problems of the technologies described above, technical scheme of the present invention comprises: a LED wafer, and its structure includes: a substrate; One first semiconductor layer, it is arranged on the described substrate; One active layer, it is arranged on described first semiconductor layer; One second semiconductor layer, it is arranged on described a plurality of active layer; One transparency conducting layer, its part are arranged on described second semiconductor layer; One first electrode, it is arranged on described first semiconductor layer; One second electrode, its part be arranged on described second semiconductor layer and described transparency conducting layer on; At least one first transparent coating, it is coated on the outside of described LED wafer, and it has low-refraction; At least one second transparent coating, it is coated on the outside of the described first transparent coating, and it has high index of refraction.
The beneficial effects of the utility model are: when the multiple light of lumination of light emitting diode, can increase the taking-up efficient of light.And have good anti-environmental stability, be not subject to the water in the atmosphere and the influence of oxygen, between layer of the present invention and the layer and the first transparent coating respectively with the strong adhesion of substrate and electrode, can not produce the phenomenon of disengaging.
The present invention also provides a kind of light emitting diode construction with multilayer film penetration window coating, and its primary structure comprises: a LED wafer, and it can send a plurality of wavelength light; At least one first transparent coating, it is coated on the outside of described LED wafer, and it has low-refraction; At least one second transparent coating, it is coated on the outside of the described first transparent coating, and it has high index of refraction.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Figure 1A is the structural representation of the LED wafer of known technology;
Figure 1B is the structural representation of the LED package of known technology;
Fig. 1 C is the curve chart of penetrance of light-emitting diode R, G, the B light of known technology;
Fig. 2 is the structural representation that the first transparent coating and the second transparent coating of a preferred embodiment of the present utility model combines with LED wafer;
Fig. 3 is the structural representation that the first transparent coating and the second transparent coating of another preferred embodiment of the present utility model combines with LED wafer;
Fig. 3 A is the structural representation that the first transparent coating and the second transparent coating of another preferred embodiment of the present utility model combines with LED wafer;
Fig. 3 B is the structural representation that the first transparent coating and the second transparent coating of another preferred embodiment of the present utility model combines with LED wafer;
Fig. 4 is the blue light of a preferred embodiment of the present utility model deposits five layers penetrance alternately in the first transparent coating and the second transparent coating a curve chart;
Fig. 5 is the green glow of a preferred embodiment of the present utility model deposits five layers penetrance alternately in the first transparent coating and the second transparent coating a curve chart;
Fig. 6 is the ruddiness of a preferred embodiment of the present utility model deposits five layers penetrance alternately in the first transparent coating and the second transparent coating a curve chart.
Description of reference numerals among the figure:
11 ' is sapphire substrate, and 12 ' is the n type gallium nitride layer, and 13 ' is the InGaN multiple quantum trap,
14 ' is P type gallium nitride layer, and 15 ' is N type electrode, and 16 ' is P type electrode,
17 ' is encapsulated layer, and 10 is LED wafer, and 11 is substrate,
12 is first semiconductor layer, and 13 is the multilayer active layer, and 14 is second semiconductor layer,
15 is transparency conducting layer, and 16 is first electrode, and 17 is second electrode,
20 is the first transparent coating, and 30 is the second transparent coating, and 40 is packaging body,
50 is fluorescent material.
Embodiment
Present known technology utilizes a transparent membrane with as the encapsulation LED wafer, when light-emitting diode sends when having two or more wavelength light, because the transparent membrane of simple layer is not quite similar for penetrating of different wave length, so produce when it has the LED wafer that can launch multi-wavelength, can't obtain preferable luminous intensity, so the utility model provides a kind of light emitting diode construction and takes out efficient to promote its light, it is to utilize the material of different refractivity to pile up alternately to form, for example: AlN (n=1.9-2.2), Al
2O
3(n=1.63), BaF
2(n=1.48), BeO (n=1.82), CeO
2(n=2.0-2.4), In
2O
3(n=2.0), TiO2 (n=2.2-2.5), ZnO (n=2), ZrO
2(n=2.05), ZnO (n=2), SnO
2(n=2.0), SrF
2(n=1.44).
Seeing also Fig. 2, is the structural representation of a preferred embodiment of the present utility model; As shown in the figure, the utility model discloses a kind of light emitting diode construction with multilayer film penetration window coating, and it comprises a LED wafer 10, at least one first transparent coating 20 and at least one second transparent coating 30; The utility model can be applicable to the light emitting diode construction of horizontal type electrode or vertical electrode formula, and present embodiment describes with the horizontal type electrode.
Wherein, described LED wafer 10 comprises a substrate 11, one first semiconductor layer 12, multilayer active layer 13, one second semiconductor layer 14, a transparency conducting layer 15, one first electrode 16 and one second electrode 17; Wherein said transparency conducting layer is a tin indium oxide (ITO), and described first semiconductor layer can be n type semiconductor layer, and described second semiconductor layer can be p type semiconductor layer.
Described first semiconductor layer 12 is arranged on the described substrate 11, described active layer 13 is arranged on described first semiconductor layer 12, described second semiconductor layer 14 is arranged on the described active layer 13, described transparency conducting layer 15 is arranged on described second semiconductor layer 14 of part, described first electrode 16 is arranged on described first semiconductor layer 12, and described second electrode 17 is arranged on part second semiconductor layer 14 and the described transparency conducting layer 15 of part.
Moreover, coat at least one first transparent coating 20 in the outside of described LED wafer 10, and at least one second transparent coating 30 is coated on the described first transparent coating 20, and wherein said first electrode 16 and second electrode 17 are not coated, with as electrically connecting; The wherein said first transparent coating 20 is the amorphous silicon nitride of a low folding rate, the described second transparent coating 30 is the amorphous silica of a high refractivity, and sees through the outside that the CVD processing procedure is deposited on the first transparent coating 20 and the second transparent coating 30 described LED wafer 10 alternately.
In addition, seeing also Fig. 3, is the structural representation of another preferred embodiment of the present utility model; As shown in the figure, can utilize a packaging body 40 to encapsulate earlier in the outside of described LED wafer, this moment, described packaging body 40 was identical with the material of at least one first transparent coating, and at least one second transparent coating 30 is coated on the described packaging body 40; Moreover, see also Fig. 3 A, when described LED wafer 10 is launched single wavelength light, its outside coats described packaging body 40, and in described packaging body 40 doping fluorescent powder, make light-emitting diode can launch the light of wavelength more than two kinds, coat the described first transparent coating and the described second transparent coating this moment again.
In addition, see also Fig. 3 B, when active layer for sending single or during dual wavelength light, can be in the described first transparent coating or the second transparent coating or both at least one fluorescent material 50 that mix.
Below with a description of test:
When one LED wafer is coated with the second transparent coating of the first transparent coating of three layers of low-refraction and two floor height refractive indexes, its correlated condition with respect to blue light is as shown in the table: (Reference Wavelength:460nm, gross thickness is 283.14nm)
| Refractive Index | Extinction Coef. | Pyhsical Thickness(nm) | |
| The ITO layer | 2.09200 | 0.02 | ---- |
| SiO2 | 1.46488 | 0 | 26.31 |
| SiN | 2.06728 | 0.0005 | 16.35 |
| SiO2 | 1.46488 | 0 | 18.77 |
| SiN | 2.06728 | 0.0005 | 22.32 |
| SiO2 | 1.46488 | 0 | 99.39 |
| Air | 1.00000 | 0 | ---- |
When one LED wafer is coated with the second transparent coating of the first transparent coating of three layers of low-refraction and two floor height refractive indexes, its correlated condition with respect to green glow is as shown in the table: (Reference Wavelength:520nm, gross thickness is 323.86nm)
| Refractive Index | Extinction Coef. | Pyhsical Thickness(nm) | |
| The ITO layer | 2.05600 | 0.0152 | ---- |
| SiO2 | 1.46132 | 0 | 29.96 |
| SiN | 2.05861 | 0.00034 | 10.86 |
| SiO2 | 1.46132 | 0 | 145.93 |
| SiN | 2.05861 | 0.00034 | 33.86 |
| SiO2 | 1.46132 | 0 | 103.24 |
| Air | 1.00000 | 0 | ---- |
When one LED wafer is coated with the second transparent coating of the first transparent coating of three layers of low-refraction and two floor height refractive indexes, its correlated condition with respect to ruddiness is as shown in the table: (Reference Wavelength:640nm, gross thickness is 404.07nm)
| Refractive Index | Extinction Coef. | Pyhsical Thickness(nm) | |
| The ITO layer | 2.03200 | 0.0112 | ---- |
| SiO2 | 1.45683 | 0 | 49.92 |
| SiN | 2.05201 | 0.00008 | 8.62 |
| SiO2 | 1.45683 | 0 | 169.72 |
| SiN | 2.05201 | 0.00008 | 50.01 |
| SiO2 | 1.45683 | 0 | 125.80 |
| Air | 1.00000 | 0 | ---- |
See also Fig. 4, Fig. 5, shown in Figure 6, be blue, green, ruddiness for the curve chart of the penetrance of the second transparent coating of the first transparent coating of three layers of low folding rate and two layers of high refractivity, can improve the penetrance of different wave length by the curve chart structure that the utility model disclosed as can be known.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (22)
1. the light emitting diode construction with multilayer film penetration window coating is characterized in that, comprising:
One LED wafer, its structure includes:
One substrate;
One first semiconductor layer, it is arranged on the described substrate;
One active layer, it is arranged on described first semiconductor layer;
One second semiconductor layer, it is arranged on described a plurality of active layer;
One transparency conducting layer, its part are arranged on described second semiconductor layer;
One first electrode, it is arranged on described first semiconductor layer;
One second electrode, its part be arranged on described second semiconductor layer and described transparency conducting layer on;
At least one first transparent coating, it is coated on the outside of described LED wafer, and it has low-refraction;
At least one second transparent coating, it is coated on the outside of the described first transparent coating, and it has high index of refraction.
2. the light emitting diode construction with multilayer film penetration window coating as claimed in claim 1 is characterized in that, described at least one first transparent coating is the amorphous silicon nitride of low-refraction.
3. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that, the described at least one second transparent coating is the amorphous silica of high index of refraction.
4. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that, described active layer can send the wavelength light of blue light or green glow or ruddiness or above-mentioned combination in any.
5. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that, described active layer is the semiconductor layer of multiple quantum trap MQW.
6. want 1 described light emitting diode construction as right, it is characterized in that the thickness of described at least one second transparent coating is less than the thickness of described at least one first transparent coating with multilayer film penetration window coating.
7. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that, described transparency conducting layer is tin indium oxide ITO.
8. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that, described first semiconductor layer is a n type semiconductor layer.
9. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that, described second semiconductor layer is a p type semiconductor layer.
10. want 1 described light emitting diode construction as right, it is characterized in that described active layer can be launched the light of single wavelength with multilayer film penetration window coating.
11. want 1 described light emitting diode construction with multilayer film penetration window coating as right, it is characterized in that comprising a packaging body, described packaging body is used to coat described LED wafer.
12. want 11 described light emitting diode constructions as right, it is characterized in that described packaging body comprises fluorescent material with multilayer film penetration window coating.
13. want 11 described light emitting diode constructions, it is characterized in that the outside of described packaging body coats the described first transparent coating and the described second transparent coating with multilayer film penetration window coating as right.
14. the light emitting diode construction with multilayer film penetration window coating is characterized in that, its primary structure comprises:
One LED wafer, it can send a plurality of wavelength light;
At least one first transparent coating, it is coated on the outside of described LED wafer, and it has low-refraction;
At least one second transparent coating, it is coated on the outside of the described first transparent coating, and it has high index of refraction.
15. want 14 described light emitting diode constructions, it is characterized in that the described at least one first transparent coating is the amorphous silicon nitride of low-refraction with multilayer film penetration window coating as right.
16. want 14 described light emitting diode constructions, it is characterized in that the described at least one second transparent coating is the amorphous silica of high index of refraction with multilayer film penetration window coating as right.
17. want 14 described light emitting diode constructions, it is characterized in that described active layer can send blue light or green glow or ruddiness or above-mentioned combination in any with multilayer film penetration window coating as right.
18. want 14 described light emitting diode constructions, it is characterized in that described active layer is the semiconductor layer of multiple quantum trap MQW with multilayer film penetration window coating as right.
19. want 14 described light emitting diode constructions as right, it is characterized in that the thickness of described at least one second transparent coating is less than the thickness of described at least one first transparent coating with multilayer film penetration window coating.
20. want 14 described light emitting diode constructions, it is characterized in that described transparency conducting layer is tin indium oxide ITO with multilayer film penetration window coating as right.
21. want 14 described light emitting diode constructions, it is characterized in that described first semiconductor layer is a n type semiconductor layer with multilayer film penetration window coating as right.
22. want 14 described light emitting diode constructions, it is characterized in that described second semiconductor layer is a p type semiconductor layer with multilayer film penetration window coating as right.
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| CN2009200737440U CN201466055U (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode structure with multiple film-penetrating window superposition layers |
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| CN2009200737440U CN201466055U (en) | 2009-04-07 | 2009-04-07 | Light-emitting diode structure with multiple film-penetrating window superposition layers |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270724A (en) * | 2010-06-01 | 2011-12-07 | 陈文彬 | Method for color purification of light emitting diode (LED) wafer |
| WO2012048616A1 (en) * | 2010-10-15 | 2012-04-19 | 深圳市瑞丰光电子股份有限公司 | Method for manufacturing led chip, led chip, and led |
| US8318516B2 (en) | 2010-05-06 | 2012-11-27 | Wen-Pin Chen | Method of wafer level purifying light color emitting from a light emitting semiconductor wafer |
| CN102956801A (en) * | 2011-08-31 | 2013-03-06 | 晶元光电股份有限公司 | Wavelength conversion structure, manufacturing method thereof and light-emitting device comprising wavelength conversion structure |
-
2009
- 2009-04-07 CN CN2009200737440U patent/CN201466055U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8318516B2 (en) | 2010-05-06 | 2012-11-27 | Wen-Pin Chen | Method of wafer level purifying light color emitting from a light emitting semiconductor wafer |
| CN102270724A (en) * | 2010-06-01 | 2011-12-07 | 陈文彬 | Method for color purification of light emitting diode (LED) wafer |
| CN102270724B (en) * | 2010-06-01 | 2014-04-09 | 陈文彬 | Method for color purification of light emitting diode (LED) wafer |
| WO2012048616A1 (en) * | 2010-10-15 | 2012-04-19 | 深圳市瑞丰光电子股份有限公司 | Method for manufacturing led chip, led chip, and led |
| CN102956801A (en) * | 2011-08-31 | 2013-03-06 | 晶元光电股份有限公司 | Wavelength conversion structure, manufacturing method thereof and light-emitting device comprising wavelength conversion structure |
| CN102956801B (en) * | 2011-08-31 | 2016-07-20 | 晶元光电股份有限公司 | Wavelength transformational structure and manufacture method thereof, and comprise its light-emitting device |
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| GR01 | Patent grant | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100512 Termination date: 20120407 |