CN113296179A - Metal super-surface filter for thermophotovoltaic - Google Patents
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 title claims abstract description 41
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 31
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 5
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims 1
- 239000004038 photonic crystal Substances 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 83
- 230000005540 biological transmission Effects 0.000 description 32
- 230000005855 radiation Effects 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 9
- 230000000875 corresponding effect Effects 0.000 description 8
- 238000000411 transmission spectrum Methods 0.000 description 6
- 230000002596 correlated effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- G02B5/201—Filters in the form of arrays
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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Abstract
A metal super-surface filter for thermophotovoltaic relates to a metal super-surface filter. The invention aims to solve the problems that the high reflection wave band of the existing photonic crystal filter is narrower, and the energy loss is larger; the characteristic size of the metal super-surface filter is small, and the cost of the preparation method is too high. A metal super-surface filter for thermophotovoltaic consists of a transparent substrate layer and a noble metal film layer with a subwavelength hole structure; the transparent substrate layer is provided with a noble metal film layer with a sub-wavelength hole structure, and a filling layer is arranged between the noble metal film layers with adjacent sub-wavelength hole structures.
Description
Technical Field
The invention relates to a metal super-surface filter.
Background
The thermophotovoltaic is a technology for realizing high-efficiency photoelectric conversion, and takes sunlight as an energy source, and a thermophotovoltaic system can absorb broadband solar spectrum energy and convert the broadband solar spectrum energy into narrow-band energy to be radiated into a photovoltaic cell, so that the limit of the traditional single-junction solar cell can be broken through theoretically, and the efficiency reaches 85.4%.
Although the theoretical upper limit of the light energy utilization rate of the solar thermal photovoltaic cell is high, the actual efficiency is low. The photovoltaic cell is made of semiconductor materials, so that the photovoltaic cell has a forbidden band width, radiation waves lower than the forbidden band width cannot be absorbed, radiation waves higher than the forbidden band width can be absorbed, high-energy radiation waves can only be absorbed by energy of one forbidden band width, redundant energy is converted into heat energy, and the service life of the photovoltaic cell is lost. In order to realize matching of an emission spectrum and an absorption spectrum, people can replace a Photovoltaic (PV) cell with a corresponding forbidden band width by changing the absorption spectrum, but the PV cell with a specific forbidden band width is difficult to obtain. Therefore, much research is done on the regulation of the emission spectrum, and the transmission and reflection of the spectrum are generally regulated by constructing a periodic microstructure on the surface of the radiator. However, the radiator works at high temperature, and the high-temperature narrow-band emission of the thermophotovoltaic system is difficult to realize experimentally, so another improved mode is to regulate and control the spectrum at the cold end, namely, a filter is added between the radiator and the PV cell to realize high transmission of a specific waveband.
The commonly used filter comprises a photonic crystal filter and a metal super-surface filter, and the commonly used one-dimensional multilayer Si/SiO in the photonic crystal filter2The film is used as a filtering material, can realize high transmission of a specific waveband and low transmission of a nearby waveband, but has relatively high transmission rate in other wavebands, especially near infrared wavebands, so that the energy utilization rate of the PV cell is greatly reduced when the film is used in thermophotovoltaic, and the service life of the PV cell is seriously influenced. Metallic super-surface filter surfaceThe metal film is a metal film with a microstructure, the inherent reflection of metal is high, the transmission is low, a sub-wavelength structure is constructed on the surface of the metal, the plasmon coupling resonance mode of the surface of the metal, air and a dielectric substrate can be changed, abnormal transmission is enhanced, the high transmission of a specific waveband can be realized by regulating and controlling the size and the periodic structure of the microstructure, and the low transmission of other wavebands can be realized. The current typical metal super-surface filter is a cross-shaped filter, which consists of a silicon dioxide substrate and a gold film with cross-shaped holes on the surface, can realize high transmission of a specific wave band and high reflection of other wave bands, but has too small characteristic size, the width of the cross-shaped holes is only 20nm and 40nm, only electron beam pulse processing can be utilized, and the cost is too high.
Disclosure of Invention
The invention provides a metal super-surface filter for thermophotovoltaic, aiming at solving the problems of narrow high-reflection wave band, large energy loss, small characteristic size of the metal super-surface filter and overhigh cost of a preparation method of the conventional photonic crystal filter.
A metal super-surface filter for thermophotovoltaic consists of a transparent substrate layer and a noble metal film layer with a subwavelength hole structure;
1-3 layers of noble metal film layers with sub-wavelength hole structures are arranged on the surface of one side of the transparent substrate layer, and a filling layer is arranged between the adjacent noble metal film layers with sub-wavelength hole structures;
the noble metal film layer with the sub-wavelength hole structure is specifically formed by hexagonal arrangement of circular ring through holes on the noble metal film layer; the outer diameter of the circular through hole is 0.2-0.4 micron, and the inner diameter is 0.1-0.3 micron; and the hole center distance between the adjacent circular ring through holes is 0.6-1 micron.
The invention has the beneficial effects that:
1. the broadband high-reflection metal super-surface filter has a noble metal film layer with a subwavelength hole structure, and the material of the noble metal film layer is noble metal, so that the noble metal film layer naturally has extremely strong reflection on infrared light.
2. The specific waveband is high in transmittance, and the sub-wavelength holes are formed in the surface of the noble metal film, so that plasmon coupling resonance modes of the metal surface, air and a dielectric substrate are changed, and light of the specific waveband can penetrate through the sub-wavelength holes.
3. The energy loss is small, when the filter is applied to a thermophotovoltaic system, most infrared light which cannot be absorbed is reflected back to the radiator, and recycling is realized; and the transmission peak of the transmission waveband is narrow, which means that only a small part of light waves with energy higher than the forbidden bandwidth can pass through the filter, so that the conversion of light energy to heat energy is reduced, the photoelectric conversion efficiency is improved, and the lowest energy of a single photon which can reach 0.15ev is converted into heat energy, so that the energy loss is extremely low.
4. Compared with a common photovoltaic cell, the preparation method has the advantages that the cost is low, the required characteristic size of the circular hole is larger when the wavelength corresponding to the forbidden band width is in a near-infrared band, the minimum characteristic size is also 100nm, the requirements of minimum line width such as photoetching and laser pulse etching are met, and the cost is lower when compared with electron beam etching.
The invention is used for a metal super-surface filter for thermophotovoltaic.
Drawings
FIG. 1 is a schematic structural diagram of a metal super-surface filter for thermophotovoltaic according to the present invention; a is a transparent substrate layer, b is a noble metal film layer with a subwavelength hole structure, and c is a filling layer;
FIG. 2 is a schematic structural view of a noble metal film layer of a subwavelength pore structure according to the present invention; 1 is a noble metal film layer, and 2 is a circular through hole;
FIG. 3 is a transmission spectrum of the metal super-surface filter for thermophotovoltaic according to the first embodiment;
FIG. 4 is a transmission spectrum of the metal super-surface filter for thermophotovoltaic according to example two;
FIG. 5 is a transmission spectrum of the metal super-surface filter for thermophotovoltaic according to example III;
FIG. 6 is a reflectance spectrum of gold;
FIG. 7 is a distribution diagram of the electric field intensity of the transmitted electromagnetic wave of the metal super-surface filter for thermophotovoltaic according to the embodiment.
Detailed Description
The first embodiment is as follows: the present embodiment is specifically described with reference to fig. 1 and 2, and a metal super-surface filter for thermophotovoltaic according to the present embodiment is composed of a transparent base layer and a noble metal film layer having a subwavelength hole structure;
1-3 layers of noble metal film layers with sub-wavelength hole structures are arranged on the surface of one side of the transparent substrate layer, and a filling layer is arranged between the adjacent noble metal film layers with sub-wavelength hole structures;
the noble metal film layer with the sub-wavelength hole structure is specifically formed by hexagonal arrangement of circular ring through holes on the noble metal film layer; the outer diameter of the circular through hole is 0.2-0.4 micron, and the inner diameter is 0.1-0.3 micron; and the hole center distance between the adjacent circular ring through holes is 0.6-1 micron.
The smaller the refractive index of the transparent substrate material is, the higher the target waveband transmittance is; the outer diameter of the hole is positively correlated with the width of the transmission peak, and the inner diameter of the hole is positively correlated with the central wavelength of the transmission peak; the hole center distance is positively correlated with the steepness of the transmission peak; the number of layers of the metal film is positively correlated with the steepness of a transmission peak, and is negatively correlated with the maximum transmission rate; the thickness and the interlayer distance of the noble metal film have no significant influence on the performance of the filter. By utilizing the rules, the structural parameters of the filter can be conveniently determined, and the filter meeting different filtering performance requirements is prepared.
Taking a commonly used photovoltaic cell GaSb cell as an example, the forbidden band width of the GaSb cell is 0.72eV, light waves lower than the energy can not be absorbed, light waves higher than the energy can be absorbed by 0.72eV, and the rest energy is converted into heat energy. According to the wavelength versus energy:
wherein E is energy (ev); h is Planck constant (6.63 × 10)-34J/s); k is constant (1.6X 10)-19J/ev); c is the speed of light (3X 10)14μ m/s); λ is the wavelength (. mu.m).
The wavelength is inversely proportional to the energy, 0.72ev corresponding to a wavelength of 1.72 μm, meaning that light with a wavelength greater than 1.72 μm cannot be absorbed, while light with a wavelength less than 1.72 μm can only be partially absorbed, with the remaining energy being converted to heat. When the filter is applied to a thermophotovoltaic system, most infrared light which cannot be absorbed is reflected back to the radiator, so that recycling is realized; and the transmission peak of the transmission waveband is narrower, which means that only a small part of light waves with energy higher than the forbidden bandwidth can pass through the filter, thereby reducing the conversion of light energy to heat energy.
The beneficial effects of the embodiment are as follows:
1. the broadband high-reflection metal super-surface filter has a noble metal film layer with a subwavelength hole structure, and the material of the noble metal film layer is noble metal, so that the noble metal film layer naturally has extremely strong reflection on infrared light.
2. The specific waveband is high in transmittance, and the sub-wavelength holes are formed in the surface of the noble metal film, so that plasmon coupling resonance modes of the metal surface, air and a dielectric substrate are changed, and light of the specific waveband can penetrate through the sub-wavelength holes.
3. The energy loss is small, when the filter is applied to a thermophotovoltaic system, most infrared light which cannot be absorbed is reflected back to the radiator, and recycling is realized; and the transmission peak of the transmission waveband is narrow, which means that only a small part of light waves with energy higher than the forbidden bandwidth can pass through the filter, so that the conversion of light energy to heat energy is reduced, the photoelectric conversion efficiency is improved, and the lowest energy of a single photon which can reach 0.15ev is converted into heat energy, so that the energy loss is extremely low.
4. The preparation method has low cost, compared with the common photovoltaic cell, the required circular hole has larger characteristic dimension and the minimum characteristic dimension of 100nm when the wavelength of the corresponding forbidden band width is in a near infrared band, meets the minimum line width requirements of photoetching, laser pulse etching and the like, and has lower cost compared with electron beam etching
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: the transparent substrate layer and the filling layer are both made of transparent materials without optical absorption in a wave band of 0.4-3 microns. The rest is the same as the first embodiment.
The third concrete implementation mode: this embodiment is different from the first or second embodiment in that: the transparent substrate layer and the filling layer are both magnesium fluoride. The other is the same as in the first or second embodiment.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: the noble metal film layer is a gold film layer. The others are the same as the first to third embodiments.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: the thickness of the noble metal film layer is 0.02-0.2 micron. The rest is the same as the first to fourth embodiments.
The sixth specific implementation mode: the present embodiment is different from one or more of the first to fifth embodiments in that: the thickness of the transparent substrate layer is 300-600 microns. The rest is the same as the first to fifth embodiments.
The seventh embodiment: the present embodiment is different from or is different from the first to sixth embodiment in that: the thickness of the filling layer is 0.2-0.5 micron. The others are the same as the first to sixth embodiments.
The specific implementation mode is eight: this embodiment is different from or is different from one of the first to seventh embodiments in that: the outer diameter of the circular through hole is 0.28 micrometer, and the inner diameter of the circular through hole is 0.1 micrometer; and the hole center distance between the adjacent circular ring through holes is 0.65 micron. The rest is the same as the first to seventh embodiments.
The specific implementation method nine: this embodiment is different from or the same as one to eight of the embodiments: the outer diameter of the circular through hole is 0.4 micron, and the inner diameter of the circular through hole is 0.3 micron; and the hole center distance between the adjacent circular ring through holes is 1 micron. The other points are the same as those in the first to eighth embodiments.
The detailed implementation mode is ten: this embodiment is different from or is different from the first to ninth embodiments in that: the outer diameter of the circular through hole is 0.2 micrometer, and the inner diameter of the circular through hole is 0.1 micrometer; and the hole center distance between the adjacent circular ring through holes is 0.6 micron. The other points are the same as those in the first to ninth embodiments.
The following examples were used to demonstrate the beneficial effects of the present invention:
the first embodiment is as follows:
a metal super-surface filter for thermophotovoltaic consists of a transparent substrate layer and a noble metal film layer with a subwavelength hole structure;
1 layer of noble metal film layer with sub-wavelength hole structure is arranged on the transparent substrate layer;
the noble metal film layer with the sub-wavelength hole structure is specifically formed by hexagonal arrangement of circular ring through holes on the noble metal film layer; the outer diameter of the circular through hole is 0.28 micrometer, and the inner diameter of the circular through hole is 0.1 micrometer; the hole center distance between the adjacent circular through holes is 0.65 micron;
the transparent substrate layer is magnesium fluoride;
the noble metal film layer is a gold film layer;
the thickness of the noble metal film layer is 0.1 micron;
the thickness of the transparent substrate layer is 500 microns.
FIG. 3 is a transmission spectrum of the metal super-surface filter for thermophotovoltaic according to the first embodiment; as can be seen from the figure, the filter has a transmission peak in a wavelength range of 0.75 μm to 3.29. mu.m, and the transmittance is about 10% at wavelengths of 0.75 μm and 3.29. mu.m.
The filter can be used for a photovoltaic cell with the forbidden band width of 0.74ev, and the corresponding wavelength is 1.62. At a wavelength of 1.62 μm, the transmittance is 80%, meaning that more than 80% of the radiant energy corresponding to the forbidden band width is transmitted into the photovoltaic cell. The transmission peak exists in a wave band of 0.25-0.75 mu m, the transmissivity is up to 0.62, and the wave band is narrower, so that the part of radiation waves is less, and the proportion of light energy converted into heat energy is smaller. Although a part of energy between 1.64 and 3.29 mu m cannot be absorbed, the utilization rate of light energy is high and the conversion to heat energy is extremely low in the wave band of 0.75 to 1.62 mu m, so that the service life of the photovoltaic cell is prolonged.
According to the conversion formula of energy and wavelength, in the wave band of 0.75-1.62 μm, the radiation wave with the energy of 0.37-0.74 eV can pass through the filter, the energy of at most 0.37eV of a single photon is converted into heat energy, and the energy loss is low.
FIG. 6 is a reflectance spectrum of gold; as can be seen from the figure, since the reflectance is close to 100% in the 0.5 μm to 10 μm band, the filter has a high reflectance in the infrared band, and the energy loss of the infrared band radiation wave can be reduced compared to the photonic crystal filter.
FIG. 7 is a distribution diagram of the electric field intensity of the transmitted electromagnetic wave of the metal super-surface filter for thermophotovoltaic according to the embodiment. As can be seen from the figure, the intensity of the electromagnetic wave transmitted through the filter is distributed, where the electromagnetic wave is a light wave and the intensity of the electric field is equivalent to the intensity of the light. It can be seen from the figure that when light passes through the hexagonal array of circular holes, resonant coupling occurs, wherein the circular area appears white, indicating that the intensity of light is large there, and light mainly passes through the circular holes.
Example two:
a metal super-surface filter for thermophotovoltaic consists of a transparent substrate layer and a noble metal film layer with a subwavelength hole structure;
the surface of one side of the transparent substrate layer is provided with 3 layers of noble metal film layers with sub-wavelength hole structures, and a filling layer is arranged between the adjacent noble metal film layers with sub-wavelength hole structures;
the noble metal film layer with the sub-wavelength hole structure is specifically formed by hexagonal arrangement of circular ring through holes on the noble metal film layer; the outer diameter of the circular through hole is 0.4 micron, and the inner diameter of the circular through hole is 0.3 micron; the hole center distance between the adjacent circular ring through holes is 1 micron;
the transparent substrate layer and the filling layer are both magnesium fluoride;
the noble metal film layer is a gold film layer;
the thickness of the noble metal film layer is 0.2 micron;
the thickness of the transparent substrate layer is 600 microns; the thickness of the filling layer is 0.5 micron.
FIG. 4 is a transmission spectrum of the metal super-surface filter for thermophotovoltaic according to example two; in the wave band of 1.14-2.16 μm, the transmission performance of the filter is very stable, and the highest transmission rate can reach 0.9; and the filter transmittance is close to 0 in the wave bands of 0.25-1.14 μm and 2.16-10 μm.
The filter can be used for a photovoltaic cell with the forbidden band width of 0.56ev, the corresponding wavelength is 2.16 mu m, when the wavelength is more than 2.16 mu m, the transmissivity is close to 0, the reflectivity is close to 1, and the energy loss of infrared band radiation waves is reduced; in the wave band of 1.14-2.16 μm, the transmissivity is over 0.78, a large amount of absorbed radiation waves penetrate through the filter to reach the photovoltaic cell, and the energy utilization rate is improved; a tiny transmission peak exists in a wave band of 0.25-1.14 mu m, the transmission peak can be ignored, and the overall transmission rate is close to 0.
According to the conversion formula of energy and wavelength, only the radiation wave with the energy of 0.57 eV-1.09 eV can pass through the filter, the energy of at most 0.52eV of a single photon is converted into the heat energy, and the energy loss is low.
Example three:
a metal super-surface filter for thermophotovoltaic consists of a transparent substrate layer and a noble metal film layer with a subwavelength hole structure;
the surface of one side of the transparent substrate layer is provided with 3 layers of noble metal film layers with sub-wavelength hole structures, and a filling layer is arranged between the adjacent noble metal film layers with sub-wavelength hole structures;
the noble metal film layer with the sub-wavelength hole structure is specifically formed by hexagonal arrangement of circular ring through holes on the noble metal film layer; the outer diameter of the circular through hole is 0.2 micrometer, and the inner diameter of the circular through hole is 0.1 micrometer; the hole center distance between the adjacent circular ring through holes is 0.6 micron;
the transparent substrate layer and the filling layer are both magnesium fluoride;
the noble metal film layer is a gold film layer;
the thickness of the noble metal film layer is 0.02 micron;
the thickness of the transparent substrate layer is 300 microns; the thickness of the filling layer is 0.2 micron;
FIG. 5 is a transmission spectrum of the metal super-surface filter for thermophotovoltaic according to example III; in the wave band of 0.81-1.44 μm, the filter has good transmission performance, and the highest transmission rate can reach 0.89; on the other hand, the filter transmittance is close to 0 in the wavelength range of 1.44 μm to 2.50 μm, and the transmittance is extremely low in the wavelength range of 0.25 μm to 0.81 μm.
The filter can be used for a photovoltaic cell with a forbidden band width of 0.84ev, the corresponding wavelength is 1.44 mu m, when the wavelength is more than 1.14 mu m, the transmissivity is close to 0, the reflectivity is close to 1, and the energy loss of infrared band radiation waves is reduced; most of the radiant wave in the wave band of 0.81-1.44 μm is absorbed by the PV cell through the filter; a transmission peak exists in a wave band of 0.63-0.70 mu m, the highest transmittance is 0.3, but the transmission peak is narrow, the proportion of converting light energy into heat energy is very small, and the energy loss is negligible.
According to the conversion formula of energy and wavelength, only the radiation wave with the energy of 0.86 eV-1.01 eV can pass through the filter, and the energy of at most 0.15eV of a single photon is converted into heat energy, so the energy loss is extremely low.
Claims (10)
1. A metal super surface filter for thermophotovoltaic is characterized in that the metal super surface filter for thermophotovoltaic consists of a transparent substrate layer and a noble metal film layer with a subwavelength hole structure;
1-3 layers of noble metal film layers with sub-wavelength hole structures are arranged on the surface of one side of the transparent substrate layer, and a filling layer is arranged between the adjacent noble metal film layers with sub-wavelength hole structures;
the noble metal film layer with the sub-wavelength hole structure is specifically formed by hexagonal arrangement of circular ring through holes on the noble metal film layer; the outer diameter of the circular through hole is 0.2-0.4 micron, and the inner diameter is 0.1-0.3 micron; and the hole center distance between the adjacent circular ring through holes is 0.6-1 micron.
2. The metallic super surface filter for thermophotovoltaics according to claim 1, wherein the transparent substrate layer and the filling layer are both made of a transparent material having no optical absorption in a wavelength range of 0.4 to 3 μm.
3. The metallic super surface filter for thermophotovoltaics according to claim 2, wherein the transparent substrate layer and the filler layer are both magnesium fluoride.
4. The metallic super-surface filter for thermophotovoltaic according to claim 1, wherein the noble metal film layer is a gold film layer.
5. The metallic super-surface filter for thermophotovoltaics according to claim 1, wherein the thickness of the noble metal film layer is 0.02 to 0.2 μm.
6. The metallic super surface filter for thermophotovoltaics according to claim 1, wherein the transparent substrate layer has a thickness of 300 to 600 micrometers.
7. The metallic super surface filter for thermophotovoltaic according to claim 1, wherein the thickness of the filling layer is 0.2 to 0.5 μm.
8. The metal super surface filter for thermophotovoltaic according to claim 1, wherein the annular through hole has an outer diameter of 0.28 micrometers and an inner diameter of 0.1 micrometers; and the hole center distance between the adjacent circular ring through holes is 0.65 micron.
9. The metal super surface filter for thermophotovoltaic according to claim 1, wherein the annular through hole has an outer diameter of 0.4 micrometers and an inner diameter of 0.3 micrometers; and the hole center distance between the adjacent circular ring through holes is 1 micron.
10. The metal super surface filter for thermophotovoltaic according to claim 1, wherein the annular through hole has an outer diameter of 0.2 micrometers and an inner diameter of 0.1 micrometers; and the hole center distance between the adjacent circular ring through holes is 0.6 micron.
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CN114189198A (en) * | 2021-12-01 | 2022-03-15 | 上海交通大学 | Super-surface-selective radiator applied to thermophotovoltaic system and preparation method thereof |
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