JP2007251114A - Substrate for high-performance solar cell having optical multi-layer film, and manufacturing method therefor - Google Patents
Substrate for high-performance solar cell having optical multi-layer film, and manufacturing method therefor Download PDFInfo
- Publication number
- JP2007251114A JP2007251114A JP2006112696A JP2006112696A JP2007251114A JP 2007251114 A JP2007251114 A JP 2007251114A JP 2006112696 A JP2006112696 A JP 2006112696A JP 2006112696 A JP2006112696 A JP 2006112696A JP 2007251114 A JP2007251114 A JP 2007251114A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- sunlight
- solar
- substrate
- cell substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
本発明は高効率発電を可能とした光学多層膜を太陽光受光面に有した太陽光電池用基板に関するものである。 The present invention relates to a solar cell substrate having an optical multilayer film capable of high-efficiency power generation on a solar light receiving surface.
太陽光を受光し光電変換により発電する太陽光電池用基板において、その発電効率を上げる1つの技術として、受光面の表面に窒化シリコン(SiN)膜を形成することで、反射防止膜として太陽光の反射を防ぎ、反射による太陽光入射のロスを少なくする事により、発電効率を上げている。更なる高効率化のために表面に凹凸をつけたテクスチャ形状にしたものも開発されている。 In a solar cell substrate that receives sunlight and generates electric power by photoelectric conversion, as one technique for increasing the power generation efficiency, a silicon nitride (SiN) film is formed on the surface of the light receiving surface, so that sunlight can be used as an antireflection film. Power generation efficiency is improved by preventing reflection and reducing the loss of sunlight incident due to reflection. In order to further increase the efficiency, a textured shape with an uneven surface has been developed.
しかし、これまでの結晶系太陽光電池は高温に弱く気温が上昇する夏場には、発電能力が低下すると言う欠点があった。
また、窒化シリコン(SiN)膜は波長領域が550nmから1000nmの範囲では透過率が90%以上となり高い反射防止効果が得られる。しかし、光電変換される太陽光スペクトル密度の高い感度領域の一部である400nmから500nmの範囲では透過率が低下し、太陽光の反射が多くなり、発電効率を下げる結果となる。また、1000nm以上の赤外領域では太陽光の透過率は80%以上あり、長波長領域での吸収率が高く、特に夏場の日中時には吸収された赤外領域の太陽光により太陽光電池用基板は加熱され、発電能力にとって不利な状況となる。However, the conventional crystalline solar cells have a drawback in that the power generation capacity decreases in summer when the temperature is weak and the temperature rises.
Further, the silicon nitride (SiN) film has a transmittance of 90% or more in the wavelength region of 550 nm to 1000 nm, and a high antireflection effect is obtained. However, in the range of 400 nm to 500 nm, which is a part of the sensitivity region where the sunlight spectral density is high, which is photoelectrically converted, the transmittance is reduced, the reflection of sunlight is increased, and the power generation efficiency is lowered. Further, in the infrared region of 1000 nm or more, the transmittance of sunlight is 80% or more, and the absorption factor in the long wavelength region is high. In particular, the solar cell substrate is absorbed by the sunlight in the infrared region absorbed during the daytime in summer. Is heated, which is disadvantageous for power generation capacity.
この改善策として、波長が400nmあたりから1100nm程度までの領域においては95%以上の透過率を得、1100nm程度以上の長波長領域では透過率を低下させ、反射率を上げる特性を持った多層膜を太陽光電池用基板の太陽光受光面に形成することにより、光電変換の有利な感度帯域では太陽光の吸収効率を上げ、かつ長波長である赤外領域での波長帯域の太陽光を反射させることにより該太陽光電池用基板の温度上昇を阻止し発電能力の低下を抑制することにより、発電効率の高い太陽光電池用基板を得ることが出来る。
解決しようとする問題点は、従来技術の欠点であった強烈な太陽光下での温度上昇による発電効率が低下してしまう点と、太陽光スペクトル密度の高い感度領域に対しては出来るだけ広い範囲で太陽光の透過率を上げる点である。 The problems to be solved are as wide as possible for the sensitivity region where the solar spectrum density is high, and the point that the power generation efficiency decreases due to the temperature rise under intense sunlight, which was a drawback of the prior art. It is the point which raises the transmittance of sunlight in the range.
太陽光電池用基板が高効率で光電変換する太陽光スペクトル密度の高い感度領域(例えば450nm程度〜11000nm程度)での太陽光の吸収を上げ、かつ長波長赤外領域(例えば1100nm程度以上)では太陽光を反射する事を最も主要な特徴とする。 The solar cell substrate increases the absorption of sunlight in a high sensitivity region (for example, about 450 nm to about 11000 nm) where the solar spectrum density is photoelectrically converted with high efficiency, and in the long wavelength infrared region (for example, about 1100 nm or more) Reflecting light is the main feature.
本発明の太陽光電池用基板は、光スペクトル密度の高い感度領域での太陽光の吸収を高め、該太陽光電池用基板の温度が上昇する長波長赤外領域での太陽光を反射することにより、該太陽光電池用基板の温度上昇を抑制し、発電効率をあげられると言う利点がある。 The solar cell substrate of the present invention enhances the absorption of sunlight in the sensitive region with high optical spectral density, and reflects the sunlight in the long wavelength infrared region where the temperature of the solar cell substrate rises, There is an advantage that the temperature rise of the solar cell substrate can be suppressed and the power generation efficiency can be increased.
プラズマCVD蒸着法による成膜の実施例を示す。高屈折率材料としてTiO2を、低屈折率材料としてSiO2を用いる。TiO2の蒸着条件としてはソースガスとしてH4TiO4加熱を用い、基板上の温度を250℃〜400℃とする。SiO2蒸着ソースガスとしてSiH4+酸素を用いる。膜構成としてはSi(Sub)/TiO2/SiO2/TiO2/SiO2/TiO2/SiO2/TiO2/SiO2の8層である。膜厚は71.8nm/133.2nm/6nm/74.6nm/144.3nm/224.79nm/139.6nm/11.59nmである。
図1にプラズマCVD蒸着法による太陽光電池用基板上に成膜した分光透過特性を示す。
図2にプラズマCVD蒸着法による太陽光電池用基板上に成膜した分光反射特性を示す。An example of film formation by plasma CVD is shown. TiO2 is used as the high refractive index material, and SiO2 is used as the low refractive index material. As deposition conditions for TiO2, H4TiO4 heating is used as a source gas, and the temperature on the substrate is set to 250C to 400C. SiH4 + oxygen is used as the SiO2 vapor deposition source gas. The film structure is eight layers of Si (Sub) / TiO2 / SiO2 / TiO2 / SiO2 / SiO2 / TiO2 / SiO2 / TiO2 / SiO2. The film thicknesses are 71.8 nm / 133.2 nm / 6 nm / 74.6 nm / 144.3 nm / 224.79 nm / 139.6 nm / 11.59 nm.
FIG. 1 shows spectral transmission characteristics formed on a solar cell substrate by plasma CVD deposition.
FIG. 2 shows spectral reflection characteristics formed on a solar cell substrate by plasma CVD deposition.
スパッター蒸着法による成膜の実施例を示す。高屈折率材料としてはNb2O5を、低屈折率材料としてはSiO2を用いる。基板温度は100℃。膜構成としてはSi(Sub)/Nb2O5/SiO2/Nb2O5/SiO2の14層である。膜厚は63.72nm/56.71nm/17.2nm/68.2nm/31.4nm/15.4nm/84.0nm/27.48nm/17.69nm/153.73nm/12.4nm/31.22nm/109.09nm/95.0nmである。
図3にスパッター蒸着法による太陽光電池用基板上に成膜した分光透過特性を示す。
図4にスパッター蒸着法による太陽光電池用基板上に成膜した分光反射特性を示す。An example of film formation by a sputtering method will be shown. Nb2O5 is used as the high refractive index material, and SiO2 is used as the low refractive index material. The substrate temperature is 100 ° C. The film configuration is 14 layers of Si (Sub) / Nb2O5 / SiO2 / Nb2O5 / SiO2. The film thickness is 63.72 nm / 56.71 nm / 17.2 nm / 68.2 nm / 31.4 nm / 15.4 nm / 84.0 nm / 27.48 nm / 17.69 nm / 153.73 nm / 12.4 nm / 31.22 nm /109.09 nm / 95.0 nm.
FIG. 3 shows the spectral transmission characteristics formed on a solar cell substrate by sputtering deposition.
FIG. 4 shows spectral reflection characteristics formed on a solar cell substrate by sputtering deposition.
電子ビーム真空蒸着法による成膜の実施例を示す。膜構成において第1層膜としてITO膜を形成する。このITO膜を導入することにより、太陽光電池の短絡電流の向上を図ることが出来る。本実施例では基板温度としては200℃としている。膜構成としてはSi(Sub)/ITO/SiO2/TiO2/SiO2/TiO2/SiO2/TiO2/SiO2の8層である。膜厚は70.4nm/136.9nm/11.3nm/31nm/124.5nm/215.86nm/138.07nm/109.36nmである。
図5に真空蒸着法による太陽光電池用基板上に成膜した分光透過特性を示す。
図6に真空蒸着法による太陽光電池用基板上に成膜した分光反射特性を示す。An example of film formation by electron beam vacuum deposition will be described. An ITO film is formed as the first layer film in the film configuration. By introducing this ITO film, the short-circuit current of the solar battery can be improved. In this embodiment, the substrate temperature is 200 ° C. The film structure is eight layers of Si (Sub) / ITO / SiO2 / TiO2 / SiO2 / TiO2 / TiO2 / TiO2 / SiO2. The film thicknesses are 70.4 nm / 136.9 nm / 11.3 nm / 31 nm / 124.5 nm / 215.86 nm / 138.07 nm / 109.36 nm.
FIG. 5 shows spectral transmission characteristics formed on a solar cell substrate by vacuum evaporation.
FIG. 6 shows spectral reflection characteristics formed on a solar cell substrate by vacuum evaporation.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006112696A JP2007251114A (en) | 2006-03-17 | 2006-03-17 | Substrate for high-performance solar cell having optical multi-layer film, and manufacturing method therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006112696A JP2007251114A (en) | 2006-03-17 | 2006-03-17 | Substrate for high-performance solar cell having optical multi-layer film, and manufacturing method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007251114A true JP2007251114A (en) | 2007-09-27 |
Family
ID=38595037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006112696A Pending JP2007251114A (en) | 2006-03-17 | 2006-03-17 | Substrate for high-performance solar cell having optical multi-layer film, and manufacturing method therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2007251114A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245533A (en) * | 2009-04-02 | 2010-10-28 | Samsung Corning Precision Glass Co Ltd | Multi-layer thin film structure for photovoltaic cell |
JP2011009419A (en) * | 2009-06-25 | 2011-01-13 | Konica Minolta Holdings Inc | Solar cell unit and method for manufacturing the same |
JPWO2016148119A1 (en) * | 2015-03-18 | 2017-12-28 | 住友化学株式会社 | Photoelectric conversion element having a reflector |
-
2006
- 2006-03-17 JP JP2006112696A patent/JP2007251114A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010245533A (en) * | 2009-04-02 | 2010-10-28 | Samsung Corning Precision Glass Co Ltd | Multi-layer thin film structure for photovoltaic cell |
JP2011009419A (en) * | 2009-06-25 | 2011-01-13 | Konica Minolta Holdings Inc | Solar cell unit and method for manufacturing the same |
JPWO2016148119A1 (en) * | 2015-03-18 | 2017-12-28 | 住友化学株式会社 | Photoelectric conversion element having a reflector |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4811945B2 (en) | Thin film photoelectric converter | |
US20100180941A1 (en) | Antireflection film of solar cell, solar cell, and method of manufacturing solar cell | |
US20100126579A1 (en) | Solar cell having reflective structure | |
JP2009231505A (en) | Solar battery | |
CN112086522B (en) | Radiation refrigeration solar cell module | |
CN103069308A (en) | Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor | |
JP7345793B2 (en) | High efficiency and angle resistant colored filter assembly for photovoltaic devices | |
JP2008270562A (en) | Multi-junction type solar cell | |
JPH04372177A (en) | Photovoltaic device | |
KR101194258B1 (en) | Transparent substrate for solar cell having a broadband anti-reflective multilayered coating thereon and method for preparing the same | |
JP2007251114A (en) | Substrate for high-performance solar cell having optical multi-layer film, and manufacturing method therefor | |
JP4789131B2 (en) | Solar cell and method for manufacturing solar cell | |
JP5290597B2 (en) | Reflector for concentrating solar cell module | |
RU2455730C2 (en) | Solar cell | |
JP4889623B2 (en) | Transparent conductive film and solar cell using transparent conductive film | |
WO2010087785A1 (en) | Thin film solar cell structure | |
JP2005277181A (en) | Method for manufacturing semiconductor device | |
JP5469298B2 (en) | Transparent conductive film for photoelectric conversion device and method for producing the same | |
CN109324362B (en) | Condensing reflector and preparation method thereof | |
WO2012171146A1 (en) | Thin film solar cell with new type anti-reflection layer and fabrication method thereof | |
Wu et al. | Boosting Total Conversion Efficiency of Hybrid Photovoltaic–Thermal via a Spectral Splitter/Absorber Based on Lossy Periodic Structured Media | |
Faisst et al. | Organic Solar Cell with an Active Area> 1 cm2 Achieving 15.8% Certified Efficiency using Optimized VIS‐NIR Antireflection Coating | |
JP5542038B2 (en) | Thin film solar cell and method for manufacturing the same, thin film solar cell module | |
JP2008260654A (en) | Glass with high sunlight-transmitting performance | |
JPS59125669A (en) | Solar battery |