CN109324362B - Condensing reflector and preparation method thereof - Google Patents
Condensing reflector and preparation method thereof Download PDFInfo
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- CN109324362B CN109324362B CN201811431750.9A CN201811431750A CN109324362B CN 109324362 B CN109324362 B CN 109324362B CN 201811431750 A CN201811431750 A CN 201811431750A CN 109324362 B CN109324362 B CN 109324362B
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 244
- 239000010410 layer Substances 0.000 claims abstract description 127
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 121
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 109
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000011241 protective layer Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 53
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 230000002940 repellent Effects 0.000 claims description 11
- 239000005871 repellent Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 229920003180 amino resin Polymers 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000002310 reflectometry Methods 0.000 abstract description 37
- 238000001579 optical reflectometry Methods 0.000 abstract description 19
- 238000010248 power generation Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 62
- 238000000576 coating method Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000003666 anti-fingerprint Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- -1 aluminum-silver Chemical compound 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0808—Mirrors having a single reflecting layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
- H02S40/22—Light-reflecting or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
The invention is suitable for the technical field of solar energy light-gathering power generation and heat collection, and provides a light-gathering reflector and a preparation method thereof, wherein the light-gathering reflector comprises a base material and a metal reflecting layer, and a first silicon dioxide protective layer is arranged between the base material and the metal reflecting layer; a connecting substrate is arranged between the first silicon dioxide protective layer and the metal reflecting layer; and a second silicon dioxide protective layer is arranged on the side, which is not provided with the connecting substrate, of the metal reflecting layer, wherein the thickness of the first silicon dioxide protective layer is more than 20nm, and the thickness of the second silicon dioxide protective layer is 170-180 nm. According to the invention, on the premise of ensuring the visible light reflectivity, the ultraviolet light reflectivity of the light gathering reflector is improved, so that the ultraviolet light reflectivity is greater than 85%, the visible light reflectivity reaches 90-92%, and the infrared light reflectivity is not lower than 30% of the ultraviolet light reflectivity, thereby meeting the design requirement of the reflectivity.
Description
Technical Field
The invention relates to the technical field of solar light-gathering power generation and heat collection, in particular to a light-gathering reflector and a preparation method thereof.
Background
The solar power generation module is a device that absorbs light energy and converts the light energy into electric energy, for example, in a lateral high concentration photovoltaic power generation module (SHCPV), a gallium arsenide solar cell of three orders is used to perform full spectrum absorption of sunlight in light bands of 300 to 650nm, 650 to 950nm, and 950 to 1800nm, respectively, and then perform high-efficiency photoelectric conversion. In the gallium arsenide solar cell, the difference of the absorption spectra of each stage of cell is large, if the current excited by a certain stage of cell is too large, the chip leakage is generated when the current exceeds the limited current of the cell, and the working performance of the cell is reduced. The battery used for absorbing the infrared band in the bottom layer has larger thickness, can generate high current and lower excited voltage, namely, the generated exciton has lower energy, is easy to dissipate in the battery and reduces the efficiency. Meanwhile, the battery used for absorbing the infrared band in the bottom layer has high probability of defects and impurities, and when the generated current is too large, electric leakage is more easily generated. Therefore, it is necessary to design and improve the reflectivity of the light gathering reflector in the ultraviolet and visible light bands according to the spectral characteristics of the solar cell chip.
Because the metal reflecting layer in the condensing reflector directly influences the utilization rate of light on the reflectivity of sunlight, the reflectivity of the condensing reflector to different wave band wavelengths can be changed by designing the structure and the material of the condensing reflector. In the scientific development stage of the current materials, the aluminum metal material is the only material with high reflectivity from ultraviolet to infrared spectral bands, the reflectivity in an ultraviolet region can reach more than 80%, and the reflectivity in a visible region can reach about 88%. However, the unprotected surface of the aluminum film will undergo oxidation in the atmosphere to form a thin layer of aluminum oxide (Al)2O3) A film layer, resulting in a rapid decrease in its reflectivity over time.
In order to solve the above problems, a thin silicon dioxide film is usually added on the outer side of the aluminum film to protect the metal reflective layer, but simply adding the silicon dioxide film cannot improve the reflectivity of the light gathering reflector in the ultraviolet region, and even if aluminum is used as the metal reflective layer, the design requirement that the reflectivity of the ultraviolet region is more than 85% cannot be met.
Disclosure of Invention
The invention mainly aims to provide a light gathering reflector and a preparation method thereof, and aims to solve the problems that in the prior art, a single silicon dioxide protective film is used for protecting a metal reflecting layer of the light gathering reflector, the service life of the light gathering reflector cannot be prolonged, the reflectivity of the light gathering reflector in an ultraviolet light area cannot be improved, and the design requirement of a solar cell on the reflectivity of the light gathering reflector cannot be met.
In order to achieve the above object, a first aspect of embodiments of the present invention provides a light gathering reflector, including a substrate and a metal reflective layer, wherein a first silica protective layer is disposed between the substrate and the metal reflective layer;
a connecting substrate is arranged between the first silicon dioxide protective layer and the metal reflecting layer;
a second silicon dioxide protective layer is arranged on one side, which is not provided with the connecting substrate, of the metal reflecting layer;
the thickness of the first silicon dioxide protective layer is greater than 20nm, and the thickness of the second silicon dioxide protective layer is 170-180 nm.
Optionally, the material of the substrate comprises one of glass, an aluminum alloy, or plastic.
Optionally, the metal reflective layer comprises one of a silver plating, an aluminum plating, or a gold plating;
the thickness of the metal reflecting layer is 120-145 nm.
Optionally, the material of the connection substrate comprises titanium;
the thickness of the connection substrate is greater than 10 nm.
Optionally, a water repellent layer is further disposed on a side of the second silica protective layer not contacting the metal reflective layer.
The thickness of the water repellent layer is 5-20 nm.
The second aspect of the embodiments of the present invention provides a method for manufacturing a light gathering reflector, including:
preparing a first silicon dioxide film on the surface of the cleaned substrate by using a silicon dioxide material, wherein the first silicon dioxide film is used as a first silicon dioxide protective layer, and the thickness of the first silicon dioxide protective film is more than 20 nm;
preparing a titanium film on the surface of the first silicon dioxide protective layer by using a titanium material, wherein the titanium film is used as a connecting substrate, and the thickness of the titanium film is more than 10 nm;
preparing an aluminum film on the connecting substrate by using an aluminum material, wherein the aluminum film is used as a metal reflecting layer, and the thickness of the aluminum film is 120-145 nm;
and preparing a second silicon dioxide film on the metal reflecting layer by using a silicon dioxide material, wherein the second silicon dioxide film is used as a second silicon dioxide protective layer, and the thickness of the second silicon dioxide film is 170-180 nm.
Optionally, when the second silicon dioxide film is prepared on the metal reflecting layer by using the silicon dioxide material, ions are used for bombardment between the target and the substrate.
Optionally, cleaning the substrate surface comprises:
cleaning the surface of the substrate by using plasma under the oxygen-assisted condition;
the flow rate of the oxygen is 1-50 sccm.
Optionally, an AF film is further prepared on a side of the second silicon dioxide protective layer not contacting the metal reflective layer, and the AF film serves as a water repellent layer;
the thickness of the water repellent layer is 5-20 nm.
According to the light gathering reflector provided by the embodiment of the invention, when the first silicon dioxide protective layer is arranged between the base material and the metal reflecting layer, the metal reflecting layer is connected with the first silicon dioxide protective layer through the connecting substrate with good adhesiveness with the metal reflecting layer; meanwhile, a second silicon dioxide protective layer is arranged on one side of the metal reflecting layer, which is not in contact with the connecting substrate, for protection; thereby form two relative surfaces of metal reflection stratum, connect second silica layer and connection substrate respectively, the structure that the connection substrate is used for connecting substrate and metal reflection stratum, the stability in the spotlight reflector structure and the stability in reflectance property have been guaranteed, and the reflectivity of second silica layer to different wavelength light is relevant rather than thickness, when the thickness that sets up the second silica protective layer is 170 ~ 180nm, can be under the prerequisite of guaranteeing visible light reflectivity, improve the ultraviolet reflectance of spotlight reflector, make ultraviolet reflectance be greater than 85%, visible light reflectivity reaches 90 ~ 92%, thereby satisfy the design requirement of reflectivity.
Drawings
Fig. 1 is a schematic structural diagram of a light gathering reflector according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another light gathering reflector according to an embodiment of the present invention;
fig. 3 is a schematic flow chart illustrating an implementation of a manufacturing method of a light gathering reflector according to a second embodiment of the present invention.
Reference numerals:
10: base material 20: metal reflective layer
30: first silicon dioxide protective layer 40: connection substrate
50: second silicon dioxide protective layer 60: AF film
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Suffixes such as "module", "part", or "unit" used to denote elements are used herein only for the convenience of description of the present invention, and have no specific meaning in themselves. Thus, "module" and "component" may be used in a mixture.
In the following description, the serial numbers of the embodiments of the invention are merely for description and do not represent the merits of the embodiments.
Example one
As shown in fig. 1, an embodiment of the invention provides a condensing reflector, which includes a substrate 10, a metal reflective layer 20, a first silicon dioxide protective layer 30, a connection substrate 40, and a second silicon dioxide protective layer 50.
In the embodiment of the present invention, the structural relationship of the components of the light gathering reflector is as follows:
a first silicon dioxide protective layer 30 is arranged between the substrate 10 and the metal reflecting layer 20; a connection substrate 40 is also arranged between the first silicon dioxide protection layer 30 and the metal reflection layer 20; the metal reflective layer 20 is provided with a second silicon dioxide protective layer 50 on the side not provided with the connection substrate 40.
The thickness of the first silicon dioxide protective layer is more than 20nm, and the thickness of the second silicon dioxide protective layer is 170-180 nm.
In the embodiment of the present invention, the substrate 10 and the metal reflective layer 20 are important components of the light gathering reflector, the former needs to satisfy the characteristics of high strength, high elastic coefficient, high impact strength, wide temperature range for use, etc., and the latter needs to have high reflectivity from ultraviolet light to infrared light.
In one embodiment, the substrate may comprise one of glass, aluminum alloy, or plastic.
In one embodiment, the metal reflecting layer comprises one of a silver plating layer, an aluminum plating layer or a gold plating layer, and the thickness of the metal reflecting layer is 120-145 nm.
In a particular application, an aluminum material may be used as the primary material of the metallic reflective layer; the aluminum material is processed by vacuum coating process, during the process of forming the aluminum film on the connecting substrate, proper metal silver can be added, and after film formation, the surface of the aluminum film as the metal reflecting layer is uniform and has no air bubbles.
In the embodiment of the invention, the first silicon dioxide protective layer 30 is arranged between the connection substrate and the base material and is used for isolating water vapor, so that the base material is prevented from being directly connected with the metal reflecting layer, the substrate layer and the metal reflecting layer are prevented from generating oxidation reaction after the base material absorbs water, and the reflectivity and the service life of the light reflecting mirror are reduced.
In the embodiment of the invention, the second silicon dioxide protective layer 50 is arranged on the surface which is not contacted with the substrate in the metal reflecting layer, one surface of the second silicon dioxide protective layer is contacted with the outside, on one hand, the second silicon dioxide protective layer is used for protecting the metal reflecting layer, the metal reflecting layer is prevented from being corroded by sulfide and halide in the air, metal oxide, bubbles and the like are generated to damage the surface flatness and the like, and the reflectivity is reduced, on the other hand, the thickness of the second silicon dioxide protective layer is arranged according to the relation between the reflectivity of light rays with different wavelengths and the thickness of silicon dioxide, on the premise of ensuring the reflectivity of visible light, the reflectivity of ultraviolet light of the light gathering reflector is improved to be more than 85%, the reflectivity of visible light is improved to 90-92%, and the reflectivity of infrared light is not less than 30.
In practical application, the first silicon dioxide protective layer needs to be even and flat in film formation, and the thickness of the first silicon dioxide protective layer can achieve the effect of isolating water vapor; the second silicon dioxide protective layer is used for protecting the metal reflecting layer, and meanwhile, the thickness of the metal reflecting layer can be adapted by adjusting the thickness of the second silicon dioxide protective layer, so that the ultraviolet reflectivity of the condensing reflector is improved.
In the embodiment of the present invention, the connection substrate 40 is used to connect the first silicon dioxide protection layer and the metal reflection layer, and the adhesion between the connection substrate and the first silicon dioxide protection layer is strong, and the adhesion between the connection substrate and the metal reflection layer is strong, so that the metal reflection layer is stably attached to the first silicon dioxide protection layer, that is, the adhesion of the metal reflection layer is improved, the service life of the metal reflection layer is prolonged, and the structural stability of the light gathering reflector is ensured.
In one embodiment, the material of the connection substrate comprises titanium, and the thickness of the connection substrate is greater than 10 nm.
In specific application, the bonding adhesive force of the metal titanium and the inorganic silicon dioxide is stronger than that of a silver coating, an aluminum coating or a gold coating and the silicon dioxide, the film forming uniformity is good, the strength is high, and the sensitivity to water vapor is low, so that the preparation of a metal radiation layer can be facilitated by using the connecting substrate mainly made of a titanium material, and the film forming effect of a metal reflecting layer in the light gathering reflector is met.
The light gathering reflector provided by the embodiment of the invention comprises a 5-layer material structure, wherein a base material 10 is taken as a standard and taken as a first layer structure, the second layer is a first silicon dioxide protective layer 30, the third layer is a connecting substrate 40, the fourth layer is a metal reflecting layer 20, and the fifth layer is a second silicon dioxide protective layer 50.
In specific application, the light gathering reflector also comprises a reflector bracket and other structures; the embodiment of the invention does not specifically limit other structures except the mirror surface composition of the light gathering reflector, such as a reflector bracket, the type of the mirror surface and the like.
In the embodiment of the invention, the metal reflective layer 20, the first silicon dioxide protective layer 30, the connection substrate 40 and the second silicon dioxide protective layer 50 form a thin film on the substrate 10 through a vacuum coating process, and finally form the mirror surface of the light gathering reflector.
In particular applications, the vacuum coating process includes, but is not limited to, vacuum sputtering, vacuum evaporation plating, or vacuum ion plating.
As shown in fig. 2, the embodiment of the invention further provides another structure of the light gathering reflector, and compared with the light gathering reflector shown in fig. 1, a water repellent layer 60 is further disposed on a side of the second silica protective layer 50 not contacting the metal reflective layer 20.
In the embodiment of the invention, the thickness of the water repellent layer is 5-20 nm.
In specific application, the water repellent layer belongs to a functional film, aminoplast AF can be used as a film material, the requirement on thickness consistency is not high, but the water drop angle and scratch resistance of the film material are very important.
According to the light gathering reflector provided by the embodiment of the invention, when the first silicon dioxide protective layer is arranged between the base material and the metal reflecting layer, the metal reflecting layer is connected with the first silicon dioxide protective layer through the connecting substrate with good adhesiveness with the metal reflecting layer; meanwhile, a second silicon dioxide protective layer is arranged on one side of the metal reflecting layer, which is not in contact with the connecting substrate, for protection; thereby forming two opposite surfaces of the metal reflecting layer, and respectively connecting the second silicon dioxide layer with the connecting substrate, wherein the connecting substrate is used for connecting the base material with the metal reflecting layer, so that the structural stability and the reflecting performance stability of the light gathering reflector are ensured; the reflectivity of the second silicon dioxide layer to light with different wavelengths is related to the thickness of the second silicon dioxide layer, and when the thickness of the second silicon dioxide protective layer is 170-180 nm, the ultraviolet reflectivity of the light gathering reflector can be improved on the premise of ensuring the visible light reflectivity, so that the ultraviolet reflectivity is greater than 85%, the visible light reflectivity reaches 90-92%, and the infrared reflectivity is not lower than 30% of the ultraviolet reflectivity, thereby meeting the design requirement of the reflectivity.
Example two
As shown in fig. 3, an embodiment of the present invention provides a method for manufacturing a light condensing reflector, including:
s301, preparing a first silicon dioxide film on the surface of the cleaned substrate by using a silicon dioxide material, wherein the first silicon dioxide film is used as a first silicon dioxide protective layer, and the thickness of the first silicon dioxide film is more than 20 nm.
In step S301, since the material generally used as the substrate has a certain water absorption property, and the metal reflective layer is made of a metal material, the metal is directly contacted with the outside, and then corroded by sulfide and halide in the air to generate metal oxide, bubbles, etc. to destroy the surface flatness, etc. and reduce the reflectivity, in order to protect the metal reflective layer, it is necessary to plate a uniform silica film on the surface of the substrate as the first silica protective layer for isolating water vapor.
In a particular application, the material of the substrate comprises one of glass, an aluminum alloy, or plastic.
In an embodiment of the present invention, cleaning the substrate surface comprises:
cleaning the surface of the substrate by using plasma under the oxygen-assisted condition;
the flow rate of the oxygen is 1-50 sccm.
In a specific application, before the first silicon dioxide film is plated, the surface of the substrate is cleaned for 1-3 min at a power of 500W, and the flow rate of oxygen gas introduced for assisting is 1-50 sccm.
In a specific application, the surface of the substrate may be coated by any coating method, for example, a magnetron sputtering medium-frequency or high-frequency source, a thermal evaporation with electron beam evaporation or a magnetron sputtering with electron beam, a magnetron sputtering, an electron beam, a thermal evaporation, and the like, and the examples of the present invention are not limited to these.
In the embodiment of the invention, when a uniform silicon dioxide film is plated on the surface of the substrate, a magnetron sputtering medium-frequency or high-frequency source is used for plating the film, and the film plating rate is controlled to be 0.25-0.4 nm/s.
S302, preparing a titanium film on the surface of the first silicon dioxide protective layer by using a titanium material, wherein the titanium film is used as a connecting substrate, and the thickness of the titanium film is more than 10 nm.
S303, preparing an aluminum film on the connecting substrate by using an aluminum material, wherein the aluminum film is used as a metal reflecting layer, and the thickness of the aluminum film is 120-145 nm.
In the above steps S302 to S303, since the bonding adhesion force between the metal titanium and the inorganic silica is stronger than that between the silver plating layer, the aluminum plating layer or the gold plating layer and the silica, and the film formation uniformity is good, the strength is high, and the sensitivity to water vapor is low, the connection substrate mainly made of titanium material can facilitate the preparation of the metal radiation layer, thereby satisfying the film formation effect of the metal reflection layer in the light gathering reflector and simultaneously ensuring the structural stability of the light gathering reflector.
In the specific application, the coating process of the aluminum film is carried out at normal temperature or low temperature, the coating rate is controlled to be 0.4-3 nm/s, and the film is uniform and bubble-free.
In a specific application, when an aluminum material is used for preparing an aluminum thin film as a metal reflecting layer, aluminum is used as a main metal material, so that silver can be doped in the preparation process to form an aluminum-silver alloy, but pure silver cannot be used for coating.
In specific applications, other materials may also be used to prepare the metal reflective layer, such as a silver plating layer prepared using silver as a main material, a gold plating layer prepared using gold as a main material; and the use of silver as the main material does not mean that only pure silver is used.
S304, preparing a second silicon dioxide film on the metal reflecting layer by using a silicon dioxide material, wherein the second silicon dioxide film is used as a second silicon dioxide protective layer, and the thickness of the second silicon dioxide film is 170-180 nm.
In step S304, the second silicon dioxide passivation layer and the first silicon dioxide passivation layer are formed by the same process; for the second silicon dioxide protective layer directly contacting the outside, the thickness of the second silicon dioxide protective layer can be set according to the relation between the reflectivity of light rays with different wavelengths and the thickness of silicon dioxide, so that the ultraviolet reflectivity of the light gathering reflector is improved to be more than 85%, the visible light reflectivity is improved to be 90-92%, the infrared light reflectivity is not lower than 30% of the ultraviolet light, the limiting current is controlled in a first-stage battery of a chip, and the optimal filling factor is obtained.
In practical application, the thickness of the second silicon dioxide protective layer is controlled to be 170-180 nm, and the aluminum film with the thickness of 120-145 nm is matched, so that the ultraviolet light reflectivity of the light gathering reflector is improved, the ultraviolet light reflectivity is greater than 85%, the visible light reflectivity reaches 90-92%, and the infrared light reflectivity is not lower than 30% of the ultraviolet light, and the design requirement of the ultraviolet light reflectivity is met.
In the embodiment of the invention, when the second silicon dioxide film is prepared on the metal reflecting layer by using the silicon dioxide material, ions are used for bombardment between the target material and the substrate.
In the specific application, ions are used for bombarding between the target material and the substrate, so that the film forming material is bombarded by electrons in the process of flying in the cavity to generate plasma or electric charge, and the adhesive force on the substrate is increased.
In one embodiment, the side of the second silicon dioxide protective layer not contacting the metal reflecting layer is also prepared with an aminoplast AF film; the AF film is used as a water repellent layer for preventing water vapor so as to prevent water marks from being left on the surface of the reflector when the reflector works in a humid environment; the thickness of the AF film is 5-20 nm.
In specific application, the anti-fingerprint film belongs to a functional film, the requirement on thickness consistency is not high, but the water drop angle and the scratch resistance of the anti-fingerprint film are very important.
In one embodiment, the anti-fingerprint film is prepared by thermal evaporation, and the evaporation rate is controlled to be 0.1-0.5 nm/s.
According to the preparation method of the light gathering reflector provided by the embodiment of the invention, when the first silicon dioxide protective layer is arranged between the base material and the metal reflecting layer, the metal reflecting layer is connected with the first silicon dioxide protective layer through the connecting substrate with good adhesiveness with the metal reflecting layer; meanwhile, a second silicon dioxide protective layer is arranged on one side of the metal reflecting layer, which is not in contact with the connecting substrate, for protection; thereby forming two opposite surfaces of the metal reflecting layer, and respectively connecting the second silicon dioxide layer with the connecting substrate, wherein the connecting substrate is used for connecting the base material with the metal reflecting layer, so that the structural stability and the reflecting performance stability of the light gathering reflector are ensured; the reflectivity of the second silicon dioxide layer to light with different wavelengths is related to the thickness of the second silicon dioxide layer, and when the thickness of the second silicon dioxide protective layer is 170-180 nm, the ultraviolet reflectivity of the light gathering reflector can be improved on the premise of ensuring the visible light reflectivity, so that the ultraviolet reflectivity is greater than 85%, the visible light reflectivity reaches 90-92%, and the infrared reflectivity is not lower than 30% of the ultraviolet light, thereby meeting the design requirement of the reflectivity.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the foregoing embodiments illustrate the present invention in detail, those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (9)
1. A light gathering reflector comprises a base material and a metal reflecting layer, and is characterized in that a first silicon dioxide protective layer is arranged between the base material and the metal reflecting layer;
a connecting substrate is arranged between the first silicon dioxide protective layer and the metal reflecting layer;
a second silicon dioxide protective layer is arranged on one side, which is not provided with the connecting substrate, of the metal reflecting layer;
the thickness of the first silicon dioxide protective layer is greater than 20nm, and the thickness of the second silicon dioxide protective layer is 170-180 nm.
2. The light gathering reflector as recited in claim 1, wherein the substrate material comprises one of glass, aluminum alloy, or plastic.
3. The light gathering reflector as recited in claim 1, wherein the metallic reflective layer comprises one of a silver plating, an aluminum plating, or a gold plating;
the thickness of the metal reflecting layer is 120-145 nm.
4. The light gathering reflector as recited in claim 1 wherein the material of the attachment substrate comprises titanium;
the thickness of the connection substrate is greater than 10 nm.
5. The light gathering reflector as claimed in claim 1, wherein a water repellent layer is further provided on a surface of the second silica protective layer not contacting the metal reflective layer;
the thickness of the water repellent layer is 5-20 nm.
6. A method of making a light gathering reflector, comprising:
preparing a first silicon dioxide film on the surface of the cleaned substrate by using a silicon dioxide material, wherein the first silicon dioxide film is used as a first silicon dioxide protective layer, and the thickness of the first silicon dioxide film is more than 20 nm;
preparing a titanium film on the surface of the first silicon dioxide protective layer by using a titanium material, wherein the titanium film is used as a connecting substrate, and the thickness of the titanium film is more than 10 nm;
preparing an aluminum film on the connecting substrate by using an aluminum material, wherein the aluminum film is used as a metal reflecting layer, and the thickness of the aluminum film is 120-145 nm;
and preparing a second silicon dioxide film on the metal reflecting layer by using a silicon dioxide material, wherein the second silicon dioxide film is used as a second silicon dioxide protective layer, and the thickness of the second silicon dioxide film is 170-180 nm.
7. The method of manufacturing a light condensing reflector according to claim 6, wherein the second silicon oxide film is formed on the metal reflective layer by using a silicon oxide material, and the target and the substrate are bombarded with ions.
8. The method of making a light gathering reflector as recited in claim 6 wherein cleaning the surface of the substrate comprises:
cleaning the surface of the substrate by using plasma under the oxygen-assisted condition;
the flow rate of the oxygen is 1-50 sccm.
9. The method for manufacturing a light condensing reflector according to claim 6, wherein an aminoplast AF film is further prepared on the surface of the second silica protective layer not contacting the metal reflective layer, wherein the AF film serves as a water repellent layer;
the thickness of the AF film is 5-20 nm.
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| CN202758090U (en) * | 2012-06-19 | 2013-02-27 | 宜兴市晶科光学仪器有限公司 | Reflecting mirror with high reflectivity and high stability within ultraviolet-visible waveband |
| CN103649787A (en) * | 2011-06-29 | 2014-03-19 | Ppg工业俄亥俄公司 | Reflective article having a sacrificial cathodic layer |
| CN104345362A (en) * | 2014-10-18 | 2015-02-11 | 中山市创科科研技术服务有限公司 | Metallic film reflector and manufacturing method thereof |
| CN108693578A (en) * | 2017-04-12 | 2018-10-23 | 扬明光学股份有限公司 | Reflecting element and speculum |
| US10132967B2 (en) * | 2015-11-02 | 2018-11-20 | Kawasaki Jukogyo Kabushiki Kaisha | Metal gloss design member |
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| CN103649787A (en) * | 2011-06-29 | 2014-03-19 | Ppg工业俄亥俄公司 | Reflective article having a sacrificial cathodic layer |
| CN202758090U (en) * | 2012-06-19 | 2013-02-27 | 宜兴市晶科光学仪器有限公司 | Reflecting mirror with high reflectivity and high stability within ultraviolet-visible waveband |
| CN104345362A (en) * | 2014-10-18 | 2015-02-11 | 中山市创科科研技术服务有限公司 | Metallic film reflector and manufacturing method thereof |
| US10132967B2 (en) * | 2015-11-02 | 2018-11-20 | Kawasaki Jukogyo Kabushiki Kaisha | Metal gloss design member |
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