CN113249724B - Method for depositing silicon dioxide film on metal film - Google Patents
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- CN113249724B CN113249724B CN202110513607.XA CN202110513607A CN113249724B CN 113249724 B CN113249724 B CN 113249724B CN 202110513607 A CN202110513607 A CN 202110513607A CN 113249724 B CN113249724 B CN 113249724B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Abstract
The invention relates to the technical field of semiconductors, and discloses a method for depositing a silicon dioxide film on a metal film, which comprises the following steps: the method comprises the following steps: growing a metal film on a substrate; step two: growing a titanium film on the metal film obtained in the step one; step three: and depositing a silicon dioxide film on the titanium film obtained in the step two. The titanium film is used as the transition layer, the transmissivity of the titanium film is high, the reflection performance of the metal film is not influenced, the titanium film is good in adhesion, the metal film and the silicon dioxide film can be well adhered together, bubbles caused by gas staying between the silicon dioxide film and the metal film due to poor adhesion performance of the silicon dioxide film and the metal film are reduced, the film forming effect of the silicon dioxide film is good, and the reflection performance of the reflection structure is guaranteed.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for depositing a silicon dioxide film on a metal film.
Background
The metal reflector is a reflector obtained by using a thin metal coating which can be made by evaporation technology or sputtering technology. The metal coating is placed on the substrate, and is usually glass or metal. Common metal coatings include aluminum, silver or gold; copper, chromium or other nickel-chromium alloys are not commonly used. The metal coating is typically coated with one or more thin layers of a dielectric material, such as amorphous silicon dioxide (SiO)2) Or silicon nitride (Si)3N4) The material is used to protect the metal coating from oxidation or scratching. These protective coatings are more abrasion resistant than uncoated and are more sensitive than dielectric mirrors. In the prior art, the metal coating is formed by covering with a silicon dioxide layer.
Silicon dioxide, one of the most widely used insulating dielectrics in the semiconductor manufacturing field, can be used as a field oxide layer, a gate oxide layer, a Shallow Trench Isolation (STI) or the like, and a silicon dioxide film can be manufactured by a thermal oxidation method and a Chemical Vapor Deposition (CVD) process, and the manufactured silicon oxides are referred to as thermal oxide silicon oxide and CVD silicon oxide, respectively. Thermal oxidation and CVD both require heating to produce a silicon dioxide film, but the metals used as the reflective structure are relatively reactive and expand at high temperatures, causing bubbles to appear on the surface of the metal layer, affecting the performance of the reflective structure and subsequent processing.
Chinese invention patent CN110596811A (published as 2020, 07/17) discloses a grating coupling structure and a method for making the same, comprising: a bottom first silicon layer; a first silicon oxide layer on the first silicon layer; the reflecting film pattern is positioned on the first silicon oxide layer and is made of metal or metal oxide with high reflectivity; a second silicon oxide layer on the first silicon oxide layer and the reflective film pattern; a third silicon oxide layer located on the second silicon oxide layer; and the top silicon layer on the third silicon oxide layer comprises a grating pattern corresponding to the upper position and the lower position of the reflecting film pattern, and the projection of the grating pattern on the surface of the reflecting film pattern is positioned inside the reflecting film pattern. In this patent, the reflective film pattern may be prepared by photolithography of the reflective layer, and the reflective layer may be prepared on the first silicon oxide layer by vapor deposition or sputtering, which may cause the reflective performance and subsequent processing to be affected due to the generation of more bubbles in the metal layer caused by the existing vapor deposition method.
Disclosure of Invention
The invention aims to provide a method for depositing a silicon dioxide film on a metal film with good film forming effect.
In order to achieve the above object, the present invention provides a method for depositing a silicon dioxide film on a metal film, comprising the steps of:
the method comprises the following steps: growing a metal film on a substrate;
step two: growing a titanium film on the metal film obtained in the step one; after the titanium film is generated, drying the titanium film at the drying temperature of 100 ℃ for 5 minutes to sinter and solidify the titanium film;
step three: depositing a silicon dioxide film on the titanium film obtained in the step two; before the deposition of the silicon dioxide film, the upper surface of the titanium film is treated by N2O for 1 minute; the silicon dioxide film was deposited using ICP CVD, the temperature in the chamber of which was kept at 75 ℃, and the constant temperature was kept for 5 minutes.
Preferably, the metal film is a gold film.
Preferably, the thickness of the titanium film grown in the second step is 2-5 nm.
Preferably, in the first step, a gold film is grown by electron beam evaporation.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the metal film, the titanium film and the silicon dioxide film are sequentially manufactured from bottom to top, the titanium film is used as a transition layer, the transmissivity of the titanium film is high, the reflection performance of the metal film is not influenced, the adhesion of the titanium film is good, the metal film and the silicon dioxide film can be well adhered together, bubbles caused by gas staying between the silicon dioxide film and the metal film due to poor adhesion of the silicon dioxide film and the metal film are reduced, the film forming effect of the silicon dioxide film is good, and the reflection performance of a reflection structure is ensured.
Drawings
FIG. 1 is a flow chart of a method of depositing a silicon dioxide film on a metal film in accordance with an embodiment of the present invention.
FIG. 2 is an image of a prior art silicon dioxide film deposited on a gold film by ICPCVD using a chamber temperature of 300 ℃ at a magnification of a digital microscope of 100.
Fig. 3 is an image of a silicon dioxide film deposited on a gold film at the magnification of the digital microscope 100 according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in fig. 1, a method for depositing a silicon dioxide film on a metal film according to a preferred embodiment of the present invention includes the steps of:
the method comprises the following steps: growing a metal film on a substrate;
step two: growing a titanium film on the metal film obtained in the step one;
step three: and depositing a silicon dioxide film on the titanium film obtained in the step two.
According to the embodiment, the metal film, the titanium film and the silicon dioxide film are sequentially manufactured from bottom to top, the titanium film is used as the transition layer, the transmissivity of the titanium film is high, the reflection performance of the metal film is not affected, the adhesion of the titanium film is good, the metal film and the silicon dioxide film can be well adhered together, bubbles caused by gas staying between the silicon dioxide film and the metal film due to poor adhesion of the silicon dioxide film and the metal film are reduced, the film forming effect of the silicon dioxide film is good, and the reflection performance of the reflection structure is guaranteed.
In the present embodiment, the metal film is a gold film. The substrate is a silicon substrate. The thickness of the titanium film grown in the second step is 2-5 nm, and the thickness of the titanium film of the embodiment is 3 nm. In addition, in step three, a silicon oxide film was deposited using ICP CVD (Inductively coupled plasma chemical vapor deposition apparatus). The temperature in the cavity of the ICP CVD is kept between 50 and 100 ℃. The temperature in the chamber of the ICP CVD of this example was maintained at 75 ℃ and maintained at a constant temperature for 5 minutes.
ICP CVD uses the induced electric field generated by high-frequency current to accelerate electrons, maintain plasma, form plasma with large area, high uniformity and high electron density, and quickly deposit to obtain high-quality silicon nitride, silicon oxide, silicon carbide and other films with good uniformity and high compactness. In the prior art, silicon dioxide is generally deposited at a high temperature (300 ℃), but if the above-mentioned technology is adopted on a gold film, gold is activated due to the temperature rise, the expansion coefficient is increased, excessive gas is retained on the surface, so that the silicon dioxide film has more bubbles after being formed, as shown in fig. 2, and the surface of the silicon dioxide film is uneven, so that semiconductor processing cannot be carried out. If a silicon oxide film is deposited on the gold film at a low temperature, the grown silicon oxide may be exfoliated due to very poor adhesion. Therefore, the present embodiment deposits silicon dioxide at a lower temperature, prevents generation of bubbles due to activation and expansion of gold and titanium into a bulge shape, and can solve the problem of bubbles due to an increase in temperature for improving adhesion by having a titanium film as an adhesion layer.
Further, in the third step, before the deposition of the silicon dioxide film, N is used2And O treatment is carried out on the upper surface of the titanium film, so that organic impurities on the surface of the titanium film can be removed, and the film forming quality of the silicon dioxide film is prevented from being influenced. This example uses N2And treating for 1 minute to achieve complete removal effect. And, in the second step, after the titanium film is generated, the titanium film is dried. The drying temperature is 100-130 ℃. In the embodiment, the titanium film is sintered and solidified by adopting a drying plate to dry at the drying temperature of 100 ℃ for 5 minutes. In addition, in the first step of the present embodiment, an electron beam evaporation method is used to grow a gold film. In addition, electron beam evaporation is also used for the titanium film growth in this example. The reflectivity of the reflection structure of the gold film, the titanium film and the silicon dioxide film in the embodiment can reach more than 90%.
To sum up, the embodiment of the present invention provides a method for depositing a silicon dioxide film on a metal film, which sequentially manufactures the metal film, a titanium film and the silicon dioxide film from bottom to top, and uses the titanium film as a transition layer, and since the titanium film has high transmittance, the reflective performance of the metal film is not affected, and the titanium film has good adhesion, the metal film and the silicon dioxide film can be well adhered together, bubbles caused by gas staying between the silicon dioxide film and the metal film due to poor adhesion of the silicon dioxide film and the metal film are reduced, the film forming effect of the silicon dioxide film is good, and the reflective performance of a reflective structure is ensured.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (4)
1. A method for depositing a silicon dioxide film on a metal film, comprising the steps of:
the method comprises the following steps: growing a metal film on a substrate;
step two: growing a titanium film on the metal film obtained in the step one; after the titanium film is generated, drying the titanium film at the drying temperature of 100 ℃ for 5 minutes to sinter and solidify the titanium film;
step three: depositing a silicon dioxide film on the titanium film obtained in the step two; before the deposition of the silicon dioxide film, the upper surface of the titanium film is treated by N2O for 1 minute; the silicon dioxide film was deposited using ICP CVD, the temperature in the chamber of which was kept at 75 ℃, and the constant temperature was kept for 5 minutes.
2. The method of claim 1, wherein the metal film is a gold film.
3. The method of claim 1, wherein the thickness of the titanium film grown in step two is 2-5 nm.
4. The method of claim 1, wherein in step one, the gold film is grown by electron beam evaporation.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0386341A1 (en) * | 1989-03-07 | 1990-09-12 | Asahi Glass Company Ltd. | Laminated glass structure |
| JPH03163402A (en) * | 1989-11-22 | 1991-07-15 | Ricoh Co Ltd | Reflecting mirror |
| CN1576902A (en) * | 2003-06-27 | 2005-02-09 | 旭硝子株式会社 | High reflectance mirror |
| CN101186128A (en) * | 2007-10-29 | 2008-05-28 | 福建师范大学 | High temperature resistant high photics reflexive conductive film and preparation method thereof |
| CN101248704A (en) * | 2005-05-11 | 2008-08-20 | 贝卡尔特股份有限公司 | A reflector for an infrared radiating element |
| CN101436616A (en) * | 2008-12-05 | 2009-05-20 | 江阴海润太阳能电力有限公司 | Double-layer reflection-decreasing film for silicon solar cell and preparation method thereof |
| CN103367465A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Multi-junction solar cell with metal reflector and preparation method thereof |
| CN106929822A (en) * | 2017-04-10 | 2017-07-07 | 上海华力微电子有限公司 | A kind of membrane deposition method |
| CN108231966A (en) * | 2017-12-25 | 2018-06-29 | 佛山市国星半导体技术有限公司 | A kind of LED chip with speculum and preparation method thereof |
| CN109324362A (en) * | 2018-11-28 | 2019-02-12 | 深圳市昂特尔太阳能投资有限公司 | A kind of condenser mirror and preparation method |
| CN211318812U (en) * | 2019-11-06 | 2020-08-21 | 宁波瑞凌新能源科技有限公司 | High-reflectivity back-reflection film |
-
2021
- 2021-05-11 CN CN202110513607.XA patent/CN113249724B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0386341A1 (en) * | 1989-03-07 | 1990-09-12 | Asahi Glass Company Ltd. | Laminated glass structure |
| JPH03163402A (en) * | 1989-11-22 | 1991-07-15 | Ricoh Co Ltd | Reflecting mirror |
| CN1576902A (en) * | 2003-06-27 | 2005-02-09 | 旭硝子株式会社 | High reflectance mirror |
| CN101248704A (en) * | 2005-05-11 | 2008-08-20 | 贝卡尔特股份有限公司 | A reflector for an infrared radiating element |
| CN101186128A (en) * | 2007-10-29 | 2008-05-28 | 福建师范大学 | High temperature resistant high photics reflexive conductive film and preparation method thereof |
| CN101436616A (en) * | 2008-12-05 | 2009-05-20 | 江阴海润太阳能电力有限公司 | Double-layer reflection-decreasing film for silicon solar cell and preparation method thereof |
| CN103367465A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Multi-junction solar cell with metal reflector and preparation method thereof |
| CN106929822A (en) * | 2017-04-10 | 2017-07-07 | 上海华力微电子有限公司 | A kind of membrane deposition method |
| CN108231966A (en) * | 2017-12-25 | 2018-06-29 | 佛山市国星半导体技术有限公司 | A kind of LED chip with speculum and preparation method thereof |
| CN109324362A (en) * | 2018-11-28 | 2019-02-12 | 深圳市昂特尔太阳能投资有限公司 | A kind of condenser mirror and preparation method |
| CN211318812U (en) * | 2019-11-06 | 2020-08-21 | 宁波瑞凌新能源科技有限公司 | High-reflectivity back-reflection film |
Non-Patent Citations (4)
| Title |
|---|
| Analysis of high-reflectivity metal–dielectric mirrors for edge-emitting lasers;Robert Bedford et al.;《OPTICS LETTERS》;20040501;第29卷(第9期);第1010-1012页 * |
| Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector;Jinrong Yuan et al.;《ELECTRONICS LETTERS》;20120913;第48卷(第19期);第1-2页 * |
| Performance improvement by metal–dielectric HR coating in laterally coupled DFB laser with metal surface gratings;S.J.Jang et al.;《Applied Physics B》;20100619;第100卷;第553-558页 * |
| 对在复制轻质金属反射镜上镀红外8～14μm反射膜的探讨;刘家环等;《光学仪器》;19991030;第21卷(第4-5期);第149-152页 * |
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