CN211318812U - High-reflectivity back-reflection film - Google Patents
High-reflectivity back-reflection film Download PDFInfo
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- CN211318812U CN211318812U CN201921899812.9U CN201921899812U CN211318812U CN 211318812 U CN211318812 U CN 211318812U CN 201921899812 U CN201921899812 U CN 201921899812U CN 211318812 U CN211318812 U CN 211318812U
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Abstract
The utility model discloses a high-reflectivity back-reflection type film, which belongs to the technical field of films and comprises a transparent medium layer, a first reflecting layer and a protective layer which are sequentially stacked; the transparent medium layer is provided with a pretreatment layer, the pretreatment layer is at least one of a metal layer, an inorganic layer or an organic layer, the transmittance of the transparent medium layer to a visible light wave band is not less than 80%, the average reflectance of the first reflection layer to a wave band of 300-2500nm is not less than 93%, and the protection layer is used for preventing the first reflection layer from being oxidized. The utility model discloses have high reflectivity to light, can reach and be not less than 93% level, low in production cost moreover, oxidation resistance is good.
Description
Technical Field
The utility model relates to a film field especially relates to a high reflectivity back of body trans film.
Background
At present, the reflection mode of the reflective film is divided into a front reflection mode and a back reflection mode, the mode of directly irradiating light on the reflective film is called front reflection, and the mode of irradiating light on the reflective film after passing through a transparent medium is called back reflection. The front reflection type has a very high requirement on the surface quality of the reflective film, and not only is scratch resistant required, but also the problem of the reduction of the reflectivity after the surface is oxidized is considered. The back reflection type has low requirement on the surface quality of a coating film, but the existing back reflection type film on the market has the problems of relatively low reflectivity and easy oxidation of a metal first reflection layer.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the shortcoming that exists among the prior art, and provide a high reflectivity back of the body trans film, have high reflectivity to the light, can reach and be not less than 93% level, low in production cost moreover, and oxidation resistance is good.
In order to achieve the above object, the utility model provides a following technical scheme: a high-reflectivity back-reflection film comprises a transparent dielectric layer, a first reflecting layer and a protective layer which are sequentially stacked; the transparent medium layer is provided with a pretreatment layer, the pretreatment layer is at least one of a metal layer, an inorganic layer or an organic layer, the transmittance of the transparent medium layer to visible light wave bands is not less than 80%, the average reflectivity of the first reflection layer to 300 nm-2500 nm wave bands is not less than 93%, and the protection layer is used for preventing the first reflection layer from being oxidized.
Preferably, the transparent medium layer comprises a glass layer and/or a flexible plastic layer, and the thickness of the glass layer and/or the flexible plastic layer is 0.01 mm-1 mm.
Preferably, the transparent dielectric layer is dispersed with inorganic particles with a particle size of 1 um-30 um, and the inorganic particles are used for radiating heat outwards with electromagnetic waves of 7um-14um wave bands.
Preferably, the thickness of the pretreatment layer is not more than 10 um.
Preferably, the thickness of the first reflective layer is 50nm to 200 nm.
Preferably, the thickness of the protective layer is 0.1nm to 200 nm.
Preferably, the reflective film further comprises a second reflective layer with a thickness of 10nm to 200nm, wherein the second reflective layer is a metal alloy layer and is used for improving the reflectivity of the first reflective layer and preventing the first reflective layer from being oxidized.
Preferably, the reflective film further comprises a transition layer with a thickness of 1nm to 50nm, wherein the transition layer is arranged between the first reflective layer and the second reflective layer and is used for avoiding ion migration between the first reflective layer and the second reflective layer; the transition layer is selected from at least one of a metal oxide layer, a nitride layer and a sulfide layer.
Preferably, the transparent conductive film further comprises a transparent electrolyte layer with the thickness of 0.1 nm-50 nm, the transparent electrolyte layer is arranged between the pretreatment layer and the first reflection layer, and the transmittance of the transparent electrolyte layer to the visible light wave band is more than 80%.
Preferably, the transparent electrolyte layer is selected from at least one of a metal oxide layer, a nitride layer, and a sulfide layer.
Compared with the prior art, the beneficial effects of the utility model are that: the first reflecting layer is made of a material with the average reflectivity not lower than 93 percent, so that the high reflectivity of the reflecting film is ensured, the second reflecting layer can improve the reflectivity of the first reflecting layer and simultaneously prevent the first reflecting layer from being oxidized, and the oxidation of the first reflecting layer and the second reflecting layer can be effectively prevented due to the existence of the anti-oxidation layer.
Drawings
Fig. 1 is a schematic structural view of the present invention;
fig. 2-7 are schematic structural diagrams of embodiments of the present invention.
In the figure: 1. a transparent dielectric layer; 2. a first reflective layer; 3. a protective layer; 4. a second reflective layer; 5. a transition layer; 6. a transparent electrolyte layer.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
In the description of the present invention, it should be noted that, for the orientation words, such as the terms "upper", "lower", "inner", "outer", etc., indicating the orientation and positional relationship based on the orientation or positional relationship shown in the drawings, is only for convenience of describing the present invention and simplifying the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and is not to be construed as limiting the specific scope of the present invention.
It should be noted that the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Example 1
As shown in fig. 1, a high-reflectivity back-reflection film includes a transparent dielectric layer 1, a first reflective layer 2 and a protective layer 3, which are sequentially stacked; the transparent medium layer 1 is provided with a pretreatment layer, the pretreatment layer is at least one of a metal layer, an inorganic layer or an organic layer, the transmittance of the transparent medium layer 1 to a visible light wave band is not less than 80%, the average reflectivity of the first reflection layer to a wave band of 300-2500nm is not less than 93%, and the protection layer 3 is used for preventing the first reflection layer from being oxidized.
The first reflecting layer utilizes the larger extinction coefficient of common metal to quickly attenuate the amplitude of light entering the metal, and the light energy is correspondingly reduced to increase the reflected light energy. Therefore, silver, copper, aluminum, silver alloy or copper alloy with a large extinction coefficient and stable optical properties is selected in practical application. The silver is the best reflection film material In the visible light and near infrared part, the reflectivity of the silver film at the wavelength of 800nm can reach 99.2%, the reflectivity of the copper at the wavelength of 650-800nm is good, but when the wavelength is less than 500nm, the reflectivity of the copper is far lower than that of the silver, therefore, preferably, the material of the first reflection layer In the embodiment is silver or silver alloy with the silver content of more than 80%, the silver content of the silver alloy layer is more than 80%, and the rest 20% can be Zn, Cu, In, Pt, Pd, Au, etc.; at a wavelength of 650-800nm, copper or a copper alloy containing more than 80% of copper may be used, wherein the Cu content In the copper alloy is more than 80%, and the remaining 20% may be Ag, Zn, In, Pt, Pd, Au, etc. The thickness of the first reflective layer is 50-200 nm.
The transparent medium layer adopts various pretreated glass or flexible plastic materials which can transmit visible light, and the pretreatment is generally as follows in practical application: the glass or flexible plastic material is used as a substrate, then a layer of metal and an inorganic or organic bottom coating layer are sputtered on the substrate, the thickness of the substrate is 0.01 mm-1 mm, and the thickness of the pretreatment layer is generally 1-100 um. The pretreatment layer is used for improving the direct adhesive force between each subsequently applied layer and the transparent medium layer.
In some preferred embodiments, inorganic particles with a particle size of 1um to 30um are dispersed in the transparent dielectric layer, and the inorganic particles are used for radiating heat outwards by electromagnetic waves in a 7um-14um waveband, so that the high-reflectivity back reflection film in the present application has a better heat insulation and cooling effect.
The protective layer mainly plays a role in protecting the first reflecting layer, and in practical application, metal nitride or metal oxide is selected, wherein the metal, the metal nitride or the metal oxide comprises Ti, Ni, Cr, NiCr, TiN, ZnO and TiO2、SnO2、SiO2、Nb2O5、Ta2O5、Al2O3、Si3N4And the thickness of the protective layer is 0.1 nm-200 nm.
More specifically, the high-reflectivity back-reflection film of the present embodiment is formed by sequentially laminating a transparent dielectric layer, a silver layer, and a protective layer.
Example 2
As shown in fig. 2, the other structure of this embodiment is the same as that of embodiment 1, and preferably, the second reflective layer 4 with a thickness of 10nm to 200nm is further included, and the second reflective layer 4 is a metal alloy layer, and is used for improving the reflectivity of the first reflective layer 2 and preventing the first reflective layer 2 from being oxidized.
The second reflective layer is mainly used for improving the reflectivity of the first reflective layer and preventing the first reflective layer from being oxidized, and in practical application, a metal or an alloy such as Al, Ti, Ni, Cr, Cu, and NiCr is selected, wherein because aluminum has good reflectivity in near ultraviolet light, visible light, and near infrared light, and after a newly deposited aluminum film is exposed to normal temperature atmosphere, an amorphous high-transparent aluminum sesquioxide film is immediately formed on the surface, an oxide film can rapidly grow to 1.5-2.0 nm within several hours to form a protective layer, and then slowly grows to reach about 5nm after one month, and can play an oxidation resistant role on an original film, and therefore, the material of the second reflective layer in this embodiment is preferably aluminum, so that the production cost is reduced.
More specifically, the high-reflectivity back-reflection film of the embodiment is sequentially stacked with a transparent dielectric layer, a silver layer, an aluminum layer and a protective layer, wherein the protective layer may be a highly transparent aluminum oxide film generated in a natural environment on the outward surface of the aluminum layer, or may be an additional protective layer which protects the aluminum layer and the silver layer.
Example 3
As shown in fig. 3 and 4, other structures of this embodiment are the same as those of embodiment 1, and preferably, the present embodiment further includes a transition layer 5 with a thickness of 1nm to 50nm, where the transition layer 5 is disposed between the first reflective layer 2 and the second reflective layer 4, and is used to avoid ion migration between the first reflective layer 2 and the second reflective layer 4.
The transition layer is mainly used for improving the bonding force between two different materials of the first reflecting layer and the second reflecting layer and simultaneously avoiding the ion migration between the two metals. In practical application, metal oxide, nitride, sulfide or dopant (doping material comprises one or more of Al, Ga, Zr, B, Y, Mo, etc.) such as TiO is adopted2、SnO2、ZnO、SiO2、Nb2O5、Ta2O5、Si3N4ZnS, the adulterants comprise AZO, GZO, YZO, ITO and the like, and the thickness of the transition layer is 1-50 nm.
More specifically, the high-reflectivity back-reflection film of the embodiment is sequentially stacked with a transparent dielectric layer, a silver layer, a transition layer, an aluminum layer and an oxidation resistant layer, or the transparent dielectric layer, the silver layer, the transition layer and the aluminum layer, and then the outward surface of the aluminum layer generates a highly transparent aluminum sesquioxide film in a natural environment, thereby protecting the aluminum layer and the silver layer.
Example 4
As shown in fig. 5, 6 and 7, the present embodiment has another structure similar to that of embodiment 1, and preferably further includes a transparent electrolyte layer 6 having a thickness of 0.1nm to 50nm, wherein the transparent electrolyte layer 6 is disposed between the pretreatment layer and the first reflection layer 2, and the transmittance of the transparent electrolyte layer 6 to the visible light band is greater than 80%.
The transparent electrolyte layer can improve the adhesive force between the first reflecting layer and the transparent medium layer and can improve the oxidation resistance of the film. In practical application, metal oxide, nitride, sulfide, or dopant (doping material containing one or more of Al, Ga, Zr, B, Y, Mo, etc.) such as TiO is selected2、SnO2、ZnO、SiO2、Nb2O5、Ta2O5、Si3N4ZnS, the adulterants comprise AZO, GZO, YZO, ITO and the like, and the thickness of the transparent electrolyte is 0.1-1 nm.
More specifically, the high-reflectivity back-reflection film of the present embodiment is sequentially stacked with a transparent dielectric layer, a transparent electrolyte layer, a silver layer, a transition layer, an aluminum layer, and an oxidation resistant layer; or, a transparent dielectric layer, a transparent electrolyte layer, a silver layer, a transition layer and an aluminum layer are sequentially stacked; or, the transparent dielectric layer, the transparent electrolyte layer, the silver layer, the aluminum layer and the anti-oxidation layer are sequentially stacked.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A high-reflectivity back-reflection film is characterized by comprising a transparent dielectric layer, a first reflecting layer and a protective layer which are sequentially stacked;
the transparent medium layer is provided with a pretreatment layer, the pretreatment layer is at least one of a metal layer, an inorganic layer or an organic layer, the transmittance of the transparent medium layer to visible light wave bands is not less than 80%,
the average reflectivity of the first reflecting layer to the wave band of 300 nm-2500 nm is not less than 93 percent,
the protective layer is used for preventing the first reflecting layer from being oxidized.
2. The high reflectivity backtrans film of claim 1, wherein the transparent dielectric layer comprises a glass layer and/or a flexible plastic layer, and the glass layer and/or the flexible plastic layer has a thickness of 0.01mm to 1 mm.
3. The high-reflectivity back-reflection film according to claim 1 or 2, wherein inorganic particles with a particle size of 1um to 30um are dispersed in the transparent medium layer, and the inorganic particles are used for radiating heat outwards with electromagnetic waves with a wave band of 7um to 14 um.
4. The high reflectivity backtrans film of claim 1, wherein the thickness of the pretreatment layer is no greater than 10 um.
5. The high reflectivity backtrans film of claim 1, wherein the first reflective layer has a thickness of 50nm to 200 nm.
6. The high reflectivity backtrans film of claim 1, wherein the protective layer has a thickness of 0.1nm to 200 nm.
7. The high reflectance back-reflection film according to claim 1, further comprising a second reflective layer having a thickness of 10nm to 200nm, wherein the second reflective layer is a metal alloy layer for increasing the reflectance of the first reflective layer and preventing the first reflective layer from being oxidized.
8. The high reflectivity back-reflection film according to claim 7, further comprising a transition layer having a thickness of 1nm to 50nm, the transition layer being disposed between the first reflective layer and the second reflective layer for preventing ion migration between the first reflective layer and the second reflective layer; the transition layer is selected from at least one of a metal oxide layer, a nitride layer and a sulfide layer.
9. The high reflectivity back-reflection film according to claim 1, further comprising a transparent electrolyte layer having a thickness of 0.1nm to 50nm, the transparent electrolyte layer being disposed between the pretreatment layer and the first reflection layer, and the transparent electrolyte layer having a transmittance in a visible light band of more than 80%.
10. The high reflectivity backtrans film of claim 9, wherein the transparent electrolyte layer is selected from at least one of a metal oxide layer, a nitride layer, and a sulfide layer.
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| CN201921899812.9U CN211318812U (en) | 2019-11-06 | 2019-11-06 | High-reflectivity back-reflection film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111763919A (en) * | 2020-09-03 | 2020-10-13 | 宁波瑞凌新能源科技有限公司 | Reflecting film and preparation method and application thereof |
| CN113249724A (en) * | 2021-05-11 | 2021-08-13 | 中山大学 | Method for depositing silicon dioxide film on metal film |
-
2019
- 2019-11-06 CN CN201921899812.9U patent/CN211318812U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111763919A (en) * | 2020-09-03 | 2020-10-13 | 宁波瑞凌新能源科技有限公司 | Reflecting film and preparation method and application thereof |
| CN113249724A (en) * | 2021-05-11 | 2021-08-13 | 中山大学 | Method for depositing silicon dioxide film on metal film |
| CN113249724B (en) * | 2021-05-11 | 2022-06-21 | 中山大学 | Method for depositing silicon dioxide film on metal film |
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