CN112698433A - Metamaterial infrared absorber and manufacturing method thereof - Google Patents
Metamaterial infrared absorber and manufacturing method thereof Download PDFInfo
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- CN112698433A CN112698433A CN202011584668.7A CN202011584668A CN112698433A CN 112698433 A CN112698433 A CN 112698433A CN 202011584668 A CN202011584668 A CN 202011584668A CN 112698433 A CN112698433 A CN 112698433A
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Abstract
The invention provides a metamaterial infrared absorber and a manufacturing method thereof. The medium isolation layer is provided with metal structures which are periodically distributed at intervals. The metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can simultaneously absorb electromagnetic waves of a medium-wave infrared band and a long-wave infrared band through the synergistic effect. The metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the synergistic effect is utilized, and the metamaterial infrared absorber can absorb electromagnetic waves of medium-wave infrared bands and electromagnetic waves of long-wave infrared bands.
Description
Technical Field
The invention relates to the technical field of micro-nano optics, in particular to a metamaterial infrared absorber and a manufacturing method thereof.
Background
At present, the photoelectric detector is not only an important component of semiconductor optoelectronics, but also plays an important role in the fields of wide application such as national defense, medical treatment, communication and the like, namely the photoelectric detector belongs to a core technology device. The infrared detector belongs to one of photoelectric detectors, can convert incident infrared radiation signals into electric signals to be output, and expands the visual ability of human beings, so that the infrared detector can be applied to the fields of night vision, monitoring, disaster reduction, security protection, remote sensing and the like. Infrared detectors have undergone a progression from unit to multivariate, and from multivariate to focal plane, with the currently predominant infrared detector being the focal plane detector. In the atmospheric environment, the infrared radiation of an object can be effectively transmitted only in three atmospheric windows of 1-2.5 μm (short wave infrared), 3-5 μm (medium wave infrared) and 8-14 μm (long wave infrared). However, due to limitations in the infrared sensitive materials and device structures used, infrared detectors typically operate in only one infrared band of the three atmospheric windows described above, and have limited ability to acquire information.
Disclosure of Invention
The invention provides a metamaterial infrared absorber and a manufacturing method thereof, which are used for simultaneously absorbing electromagnetic waves of a medium-wave infrared band and a long-wave infrared band and simplifying the structure.
In a first aspect, the invention provides a metamaterial infrared absorber, which comprises a substrate, a metal film layer arranged on the substrate, and a medium isolation layer arranged on the metal film layer. And metal structures are arranged on the medium isolation layer and are distributed at intervals periodically, and each metal structure has C4 symmetry. And the metamaterial infrared absorber consisting of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs the electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, surface plasmon propagation and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in both a medium-wave infrared band and a long-wave infrared band by utilizing the synergistic effect. Meanwhile, the metamaterial infrared absorber is formed by sequentially laminating the metal film layer, the medium isolation layer and the metal structure, the structure is simplified, only the metal structure on the topmost layer needs to be manufactured with the microstructure during processing, the microstructure can be formed through one-time photoetching, processing is easy, and the processing difficulty is reduced.
In a specific embodiment, the thickness of the dielectric isolation layer is set to be thick, so that the electromagnetic wave absorption rate of the metamaterial infrared absorber has absorption peaks in the medium-wave infrared band and the long-wave infrared band respectively, and the electromagnetic wave absorption rate in the medium-wave infrared band and the long-wave infrared band is improved.
In a specific embodiment, the set thickness is 0.6 μm to 0.8 μm to further improve the absorption rate of the electromagnetic wave in the medium-wave infrared band and the long-wave infrared band.
In a specific embodiment, the material of the dielectric isolation layer is silicon, gallium antimonide or gallium arsenide, so that the dielectric isolation layer can be grown on the metal film layer by selecting a semiconductor process which is easy to implement by the current technology, and therefore, the dielectric isolation layer does not need to be bonded on the metal film layer, and the processing technology is simplified.
In a specific embodiment, the metal structure is a disk structure, a cross-shaped structure or a square structure, so that the formed metamaterial infrared absorber has polarization insensitivity and can be applied to the condition of incidence of various polarization states, and meanwhile, the metamaterial absorber also has the characteristic of allowing large-angle incidence.
In a specific embodiment, the metal structure is a disk structure, and the diameter of the disk structure is 0.6-0.7 μm, so that the absorption rate of the metamaterial infrared absorber to the electromagnetic wave in the long-wave infrared band is integrally larger under the condition that the absorption peak of the medium-wave infrared band is almost unchanged.
In a specific embodiment, the thickness of the disc structure is 10nm to 15nm to enhance the effect of dual band absorption.
In a specific embodiment, the distance between the centers of two adjacent disc structures is 1.0-1.6 μm, so as to improve the overall absorption rate of the medium-wave infrared and long-wave infrared dual-wave bands.
In a specific embodiment, the thickness of the metal film layer is not less than 100nm, so that the thickness of the metal film layer is far greater than the skin depth of the infrared band electromagnetic wave in the metal film layer, and the transmission of light is completely prevented.
In a specific embodiment, the metal film layer and the metal structure are made of titanium, and the dielectric isolation layer is made of silicon, so as to improve the absorption effect of the metamaterial infrared absorber, and simultaneously, the metal film layer, the dielectric isolation layer and the metal structure are conveniently grown on the substrate by adopting an integrated circuit CMOS compatible process.
In a specific embodiment, the metal structures are periodically distributed on the dielectric isolation layer in a square lattice manner.
In a specific embodiment, the metal structures are periodically distributed on the dielectric isolation layer in a hexagonal lattice pattern.
In a second aspect, the present invention further provides a method for manufacturing the metamaterial infrared absorber, including:
providing a substrate;
growing a metal film layer on the substrate;
growing a medium isolation layer on the metal film layer;
forming metal structures on the medium isolation layer, wherein the metal structures are periodically distributed at intervals, and each metal structure has C4 symmetry;
and the metamaterial infrared absorber consisting of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs the electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber composed of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, surface plasmon propagation and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in both a medium-wave infrared band and a long-wave infrared band by utilizing the synergistic effect. Meanwhile, the metamaterial infrared absorber is formed by a metal film layer, a medium isolation layer and a metal structure which are sequentially stacked, the metal film layer and the medium isolation layer are both formed on the substrate by adopting an integrated circuit CMOS compatible process, the medium isolation layer is formed on the metal film layer, only the metal structure at the topmost layer needs to be manufactured with a microstructure, and the microstructure can be formed through one-time photoetching, so that the metamaterial infrared absorber is easy to process, and the processing difficulty is reduced.
Drawings
FIG. 1 is a perspective view of an infrared absorber of a metamaterial according to an embodiment of the present invention;
FIG. 2 is a perspective view of an absorbent structure unit in a metamaterial IR absorber in accordance with embodiments of the present invention;
FIG. 3 is a side view of the absorbent structural unit shown in FIG. 2;
FIG. 4 is a top view of the absorbent structural unit shown in FIG. 2;
FIG. 5 is a graph showing a comparison of wavelength-absorption changes with the presence of a dielectric isolation layer on top of a metal film layer and a metal structure;
FIG. 6 is a graph illustrating wavelength-absorbance changes in thicker and thinner dielectric spacer layer thicknesses for an infrared absorber of a metamaterial in accordance with an embodiment of the present invention;
FIG. 7 is a graph illustrating wavelength-absorbance changes for different thicknesses of dielectric spacers in an infrared absorber of a metamaterial in accordance with an embodiment of the present invention;
FIG. 8 is a graph illustrating wavelength-absorbance change of a metamaterial infrared absorber at different periodic densities in comparison with an embodiment of the present invention;
FIG. 9 is a graph illustrating wavelength-absorbance change of a metamaterial infrared absorber in a disc structure with different diameters according to an embodiment of the present invention;
FIG. 10 is a graph illustrating wavelength-absorbance change of a metamaterial infrared absorber in comparison with a disc structure with different thicknesses according to an embodiment of the present invention;
FIG. 11 is a graph showing a comparison of the wavelength-absorbance change of a metamaterial infrared absorber in two polarization states of TE and TM according to an embodiment of the present invention;
FIG. 12 is a graph illustrating wavelength-absorbance change of a metamaterial infrared absorber at different incident angles in comparison with an embodiment of the present invention;
fig. 13 is a graph illustrating wavelength-absorbance change of a dielectric spacer layer of a metamaterial infrared absorber in comparison to different materials according to an embodiment of the present invention.
Reference numerals:
1-substrate 2-metal film layer 3-medium isolating layer 4-metal structure
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to facilitate understanding of the metamaterial infrared absorber provided by the embodiment of the present invention, an application scenario of the metamaterial infrared absorber provided by the embodiment of the present invention is first described below, and the metamaterial infrared absorber as a structure for absorbing electromagnetic waves can be applied to products such as an infrared detector, a radiation cooling device, and a solar energy collecting device. The metamaterial infrared absorber is described in detail below with reference to the accompanying drawings.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, the metamaterial infrared absorber provided by the embodiment of the invention includes a substrate 1, a metal film layer 2 disposed on the substrate 1, and a dielectric isolation layer 3 disposed on the metal film layer 2. The metal structures 4 are arranged on the medium isolation layer 3, the metal structures 4 are distributed at intervals periodically, and each metal structure 4 has C4 symmetry. And the metamaterial infrared absorber consisting of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of a medium-wave infrared band and a long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber composed of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in both a medium-wave infrared band and a long-wave infrared band by utilizing the synergistic effect. Meanwhile, the metamaterial infrared absorber is formed by the metal film layer 2, the medium isolation layer 3 and the metal structure 4 which are sequentially stacked, the structure is simplified, only the metal structure 4 at the topmost layer needs to be manufactured with a microstructure during processing, the microstructure can be formed through one-time photoetching, processing is easy, and processing difficulty is reduced. The above-described respective structures will be described in detail with reference to the accompanying drawings.
Referring to fig. 1, 2 and 3, when the substrate 1 is provided, the substrate 1 may be a hard flat substrate, and as a support structure, the material of the substrate 1 may be silicon, quartz glass or any other flat hard material. The metal film layer 2, the medium isolation layer 3 and the metal structure 4 are sequentially arranged on the substrate 1 from bottom to top, and the metal structure 4 is periodically distributed at intervals, namely a metal-medium isolation layer-metal structure is formed. When the metal film layer 2 is specifically provided, the thickness t of the metal film layer 2mirrorMay be not less than 100nm, specifically, tmirrorThe thickness of the metal film layer 2 can be any value not less than 100nm, such as 100nm, 110nm, 120nm, 130nm, 140nm, 150nm and the like, so that the thickness of the metal film layer 2 is far greater than the skin depth of the infrared band electromagnetic wave in the metal film layer 2, and the transmission of light is completely prevented. The metal film layer 2 can be made of titanium so as to improve the absorption effect of the metamaterial infrared absorber and facilitate the growth of the metal film layer 2 on the substrate 1 by adopting an integrated circuit CMOS compatible process. Of course, the metal film layer 2 may be made of other metal materials. In the concrete determination mediumDuring the material of matter isolation layer 3, the material of medium isolation layer 3 can be for silicon, gallium antimonide or gallium arsenide to the semiconductor technology that current technology easily realized is selected and medium isolation layer 3 grows out on metal film layer 2, thereby need not to bond medium isolation layer 3 on metal film layer 2, simplifies processing technology.
When the metal structure 4 is specifically arranged, the metal structure 4 has C4 symmetry, specifically, the metal structure 4 can be a disc structure, a cross-shaped structure or a square structure, so that the formed metamaterial infrared absorber has polarization insensitivity, can be applied to the incident conditions of various polarization states, and simultaneously enables the metamaterial absorber to have the characteristic of allowing large-angle incidence. The metal structure 4 can be made of titanium, and the dielectric isolation layer 3 can be made of silicon so as to improve the absorption effect of the metamaterial infrared absorber and facilitate the growth of the metal structure 4 on the dielectric isolation layer 3 by adopting an integrated circuit CMOS compatible process. Of course, the metal structure 4 may be another metal material. In a specific arrangement of the metal structures 4, referring to fig. 1, the metal structures 4 may be periodically distributed on the dielectric isolation layer 3 in a square lattice manner, i.e., 4 metal structures 4 are adjacent around each metal structure 4. The metal structures 4 may also be periodically distributed on the dielectric isolation layer 3 in a hexagonal lattice manner, i.e. 6 metal structures 4 are adjacent around each metal structure 4.
In the prior art, an absorber is provided, which only has a substrate 1 provided with a metal titanium film, but no dielectric isolation layer 3 and no metal structure 4. As shown in fig. 5, there is a schematic view of absorptance in the middle-wave infrared band and the long-wave infrared band of the absorber composed of only one metal film layer 2. It should be noted that the medium-wave infrared band means a band having a wavelength of 3 μm to 5 μm, and the long-wave infrared band means a band having a wavelength of 8 μm to 14 μm. As can be seen from FIG. 5, the absorptance of the whole absorber in the wavelength range of 2 μm to 15 μm is 40% or less. Wherein the absorptivity in the medium wave infrared band (3-5 μm) is about 10-35%. The absorption rate of the long-wavelength infrared band wave (8 μm to 14 μm) is lower and 5% or less, and the absorption rate becomes closer to 0 as the wavelength becomes longer (as shown by the solid line curve in FIG. 5).
With continuing reference to fig. 5, by adding the dielectric isolation layer 3 with a set thickness above the metal film layer 2 and adding the metal structure 4 with a suitable size on the dielectric isolation layer 3, when the metamaterial infrared absorber of the present application is formed, the absorption rates of two important infrared window bands of medium-wave infrared and long-wave infrared can be increased to more than 80% by using the synergistic effect of the fabry-perot cavity mode, the propagation surface plasmon mode and the local surface plasmon resonance mode supported by the metal-dielectric-metal integral structure (as shown by the band-pass curve in fig. 5). Therefore, compared with the absorber only consisting of one metal film layer 2 in the prior art, the metamaterial infrared absorber disclosed by the application has a good absorption effect in both a medium-wave infrared band and a long-wave infrared band.
In addition, the thickness of the medium isolation layer 3 is tdThe method is an important parameter influencing the performance of the infrared absorber of the metamaterial, and needs to be optimized to determine a specific value. By adjusting the thickness of the medium isolation layer 3, the metamaterial infrared absorber consisting of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 can support the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves of a medium-wave infrared band and a long-wave infrared band through the synergistic effect. Specifically, the thickness of the dielectric isolation layer 3 may be a set thickness, so that the electromagnetic wave absorption rate of the metamaterial infrared absorber has absorption peaks in both the medium-wave infrared band and the long-wave infrared band, so as to improve the electromagnetic wave absorption rate in the medium-wave infrared band and the long-wave infrared band. Wherein, the electromagnetic wave absorption rate of the metamaterial infrared absorber has absorption peaks in the distribution of medium wave infrared band and long wave infrared band: the metamaterial infrared absorber can have 1, 2, 3 and the like absorption peaks which are not less than 1 in a medium wave infrared band, and the metamaterial infrared absorber can have 1, 2, 3 and the like absorption peaks which are not less than 1 in a long wave infrared band.
Fig. 6 shows a schematic diagram of the absorbance-wavelength variation of the metamaterial infrared absorber for thicker and thinner dielectric spacer layers 3. As can be seen from fig. 6, compared to the composition of only the metal film layer 2The absorption rate of the absorber (no marked curve in fig. 6) is changed, and no matter the metamaterial infrared absorber disclosed by the application is thick in the medium isolation layer 3 or thin in the medium isolation layer 3, the metamaterial infrared absorber has obvious absorption peaks in the wave band of 2-15 microns. But the thickness of the dielectric spacer layer 3 is different, so that the absorption rate of the infrared absorber of the metamaterial is changed differently. When the dielectric spacer layer 3 is thin (corresponding to t)d0.2 μm, squares marked by a solid line), only one absorption peak can be generated in the mid-wave infrared band of 3 to 5 μm. Although the absorption band width is large, no absorption peak is generated in the long-wave infrared band range of 8 μm to 14 μm. When the dielectric spacer layer 3 is relatively thick (corresponding to t)d0.7 μm, solid triangle mark line), although the absorption band bandwidth in the range of the mid-wave infrared band of 3 to 5 μm becomes narrow, another broad absorption peak appears in the range of the long-wave infrared band of 8 to 14 μm, and the effect of two-band absorption is primarily achieved. Since the newly generated absorption peak wavelengths are red-shifted with the increase of the thickness of the dielectric isolation layer 3, the absorption peaks contribute to the Fabry-Perot cavity resonance mode corresponding to the structural dielectric isolation layer 3.
When the thickness of the dielectric separation layer 3 is specifically determined, the set thickness may be 0.6 μm to 0.8 μm, and specifically, the set thickness may be any value between 0.6 μm and 0.8 μm, such as 0.6 μm, 0.7 μm, and 0.8 μm, so that the absorption rate of the metamaterial infrared absorber in the medium-wave infrared band has one absorption peak, and the absorption rate in the long-wave infrared band has two absorption peaks, thereby further improving the absorption rate of the electromagnetic waves in the medium-wave infrared band and the long-wave infrared band. Referring to fig. 7, when the thickness of the dielectric isolation layer 3 is 0.4 μm and 0.5 μm, and the thickness of the dielectric layer is 0.9 μm and 1.0 μm, the absorptance of the infrared absorber of the metamaterial has one absorption peak in the middle wave infrared band, and has only one absorption peak in the long wave infrared band. When the thickness of the medium isolation layer 3 is 0.6 μm, 0.7 μm and 0.8 μm, the absorptivity of the infrared absorber of the metamaterial has one absorption peak in the medium wave infrared band, but the absorptivity of the infrared absorber of the metamaterial has two absorption peaks in the long wave infrared band, so that the whole absorptivity of the infrared absorber of the metamaterial is larger, and the absorption effect is better.
In addition, the density of the metal structures 4 periodically distributed on the dielectric isolation layer 3 also affects the absorptivity of the metamaterial infrared absorber. And the spacing between adjacent metal structures 4 determines the degree of density of the periodic distribution of the metal structures 4. The following description will exemplify an arrangement in which the gold microstructure 4 is a disk structure. When the distance between the two disc structures is specifically determined, the distance between the centers of the two adjacent disc structures can be 1.0-1.6 μm, and specifically, the distance between the centers of the two adjacent disc structures can be any value between 1.0-1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm and the like, so that the absorption rate of the metamaterial infrared absorber in the medium-wave infrared band has one absorption peak, and the absorption rate in the long-wave infrared band has two absorption peaks, thereby improving the overall absorption rate of the medium-wave infrared band and the long-wave infrared band.
Referring to fig. 1 and 8, assuming that a pitch Px between centers of two disk structures adjacent in the x direction is equal to a pitch Px between centers of two disk structures adjacent in the y direction, that is, P ═ Px ═ Py, the plurality of disk structures are periodically distributed on the dielectric separation layer 3 in a square lattice manner. As shown in FIG. 8, when the distance between the centers of two adjacent disk structures is 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, the absorption rate of the infrared absorber of the metamaterial has one absorption peak in the middle wave infrared band and two absorption peaks in the long wave infrared band, so as to improve the overall absorption rate of the middle wave infrared and long wave infrared bands. With the increase of the period (i.e. the periodic distribution of the metal structure 4 is sparse), the absorption peak of the medium-wave infrared band is hardly affected, the two absorption peaks of the long-wave infrared band gradually get close, the corresponding absorption bandwidth gradually narrows, and the line type of the absorption spectrum also changes to a certain extent. Since the variation of the period P mainly affects the edge pitch of the disc structures, i.e. the degree of coupling between the disc structures, in the case where the diameter of the disc structures is fixed. Thus, as the period P gradually increases, the edge spacing between the disk structures gradually increases, and the coupling between the disk structures becomes weaker, so that the two absorption peaks gradually approach, the absorption bandwidth becomes narrower, and the overall absorption rate within the bandwidth increases. Thus, if only an absorption rate approaching 100% in a narrower band (e.g. 9 μm to 12 μm) is sought, a slightly larger period may be chosen, e.g. 1.4 μm or 1.6 μm. However, considering that the total absorption rate of the medium-wave infrared and long-wave infrared bands is the maximum, quantitative evaluation data (shown as the number on the right of each curve) of the total absorption effect is obtained by integrating the area under the curve of the absorption characteristic curve in the range of 3 μm to 5 μm and 8 μm to 14 μm, and the period with the optimal P of 1.1 μm can be determined.
In addition, the diameter of the metal structure 4 also affects the overall absorption effect of the metamaterial infrared absorber. When the metal structure 4 is a disk structure, the diameter of the disk structure may be 0.6 μm to 0.7 μm, specifically, the diameter of the disk structure may be 0.6 μm, 0.7 μm, or any value between 0.6 μm to 0.7 μm, so that the absorptivity of the metamaterial infrared absorber in the medium-wave infrared band has one absorption peak, and the absorptivity of the metamaterial infrared absorber in the long-wave infrared band has two absorption peaks, that is, the absorptivity of the metamaterial infrared absorber in the long-wave infrared band is generally large under the condition that the absorption peak of the medium-wave infrared band is almost unchanged. Referring to fig. 9, in the case where the period is fixed to be 1.1 μm, as the diameter D of the disc structure is increased from small to large, the absorption peak of the middle wave infrared band is almost constant, the absorption peak of the long wave infrared band becomes more pronounced, and the line shape is changed accordingly. When the diameter of the disc structure is 0.6 mu m and 0.7 mu m, the absorptivity of the metamaterial infrared absorber in the medium-wave infrared band has one absorption peak, and the absorptivity of the metamaterial infrared absorber in the long-wave infrared band has two absorption peaks, namely, under the condition that the absorption peaks of the medium-wave infrared band are almost unchanged, the absorptivity of the metamaterial infrared absorber to electromagnetic waves in the long-wave infrared band is integrally larger. Similar to fig. 8, the area under the curve is integrated to perform quantitative comparison, so that the best effect of the two-band absorption can be selected when the disc diameter D is 0.7 μm.
Furthermore, the thickness of the disc structure also affects the metamaterial infrared absorberWhen the thickness of the disc structure is determined, the thickness of the disc structure is 10 nm-15 nm, the thickness of the disc structure can be any value between 10 nm-15 nm such as 10nm, 11nm, 12nm, 13nm, 14nm and 15nm, the absorption rate of the infrared absorber of the metamaterial in a medium-wave infrared band has one absorption peak, and the absorption rate in a long-wave infrared band has two absorption peaks, so that the effect of double-band absorption is improved. Referring to fig. 10, as the thickness of the metal structure 4 of the top layer increases, the absorption peak of the mid-wave infrared band is almost constant (i.e., the absorption rate of the mid-wave infrared band is independent of the thickness of the metal structure 4 of the top layer), while the absorption characteristic of the long-wave infrared band is significantly changed. When the thickness of the disc structure is 10nm and 15nm, the absorption rate of the metamaterial infrared absorber in a medium-wave infrared band has one absorption peak, and the absorption rate of the metamaterial infrared absorber in a long-wave infrared band has two absorption peaks, so that the effect of double-band absorption is improved. Similar to FIG. 8, the area under the curve is integrated to make a quantitative comparison, so that the thickness t of the metal on the top layer can be selectedmThe best effect of dual band absorption is achieved at 10 nm.
The metamaterial infrared absorber shown above has the following excellent characteristics in addition to the two-band, broadband absorption characteristic shown above:
(1) the metamaterial infrared perfect absorber provided by the embodiment of the invention has polarization insensitivity, namely, the infrared absorption characteristics of the metamaterial infrared perfect absorber are kept unchanged for incident light waves with different polarizations. As shown in fig. 11, in the case of normal incidence, no matter transverse electric wave (TE) or transverse magnetic wave (TM) is incident, the absorption characteristic curves of the metamaterial infrared absorber in the embodiment of the present invention completely overlap, which illustrates that the metamaterial infrared absorber designed in the embodiment of the present invention can be applied to both TE and TM polarizations. Because any polarization state can be obtained by superposing TE and TM polarization states, the infrared absorber designed by the embodiment of the invention can keep the absorption characteristic unchanged in various polarization states including linearly polarized light, circularly polarized light, elliptically polarized light and unpolarized light in any direction, thereby having the polarization insensitivity characteristic.
(2) The metamaterial infrared perfect absorber provided by the embodiment of the invention also has the characteristic of wide incident angle. The solid black unmarked line in fig. 12 shows the case at normal incidence (corresponding to the incident angle θ being 0 °), and the absorption characteristics of the infrared absorber gradually change as the incident angle gradually increases away from normal incidence. With the gradual increase of the incident angle, the absorption rate of the medium wave infrared band is increased and then reduced, and the absorption rate of the long wave infrared band is reduced gradually. Similarly, quantitative comparisons were performed by integrating the area under the curve. In the range of theta less than or equal to 50 degrees, the overall performance of the device is reduced by no more than 2 percent compared with the optimal condition (20 degrees), and meanwhile, the lowest absorptivity of the device in the middle-wave infrared band and the long-wave infrared band is kept above 80 percent. When the incidence angle theta is increased to 80 degrees, the overall performance of the device is reduced to 83% of the optimal performance, but the lowest absorption rate in the middle-wave infrared band and the long-wave infrared band can still reach more than 60%. Therefore, the metamaterial infrared perfect absorber provided by the embodiment of the invention has excellent wide incident angle characteristics.
(3) The medium isolation layer 3 of the metamaterial infrared absorber in the embodiment of the invention can adopt various alternative materials to achieve the same or similar dual-waveband efficient absorption effect. For example, two-band absorption in the infrared band can also be produced using alternative materials to silicon (Si), gallium antimonide (GaSb) or gallium arsenide (GaAs). As shown in FIG. 13, by optimizing the geometrical parameters of the structure, the three devices can achieve absorption efficiency of 80% or more at the lowest in the wavelength bands of 3-5 μm and 8-14 μm. The quantitative comparison is carried out by adopting an area integration method under the curve, and the difference of the integral values of different materials is only about 0.1, and the performance difference is not more than 2.5 percent. Therefore, the metamaterial infrared absorber structure related in the embodiment of the invention is not limited to one material, but has a wider material selection range.
The metamaterial infrared absorber composed of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves of both a medium-wave infrared band and a long-wave infrared band by utilizing the synergistic effect. Meanwhile, the metamaterial infrared absorber is formed by the metal film layer 2, the medium isolation layer 3 and the metal structure 4 which are sequentially stacked, the structure is simplified, only the metal structure 4 at the topmost layer needs to be manufactured with a microstructure during processing, the microstructure can be formed through one-time photoetching, processing is easy, and processing difficulty is reduced.
In addition, an embodiment of the present invention further provides a manufacturing method of the metamaterial infrared absorber, and with reference to fig. 1, fig. 2, fig. 3, and fig. 4, the manufacturing method includes:
providing a substrate 1;
growing a metal film layer 2 on the substrate 1;
growing a medium isolation layer 3 on the metal film layer 2;
forming metal structures 4 on the dielectric isolation layer 3, wherein the metal structures 4 are periodically distributed at intervals, and each metal structure 4 has C4 symmetry;
and the metamaterial infrared absorber consisting of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs electromagnetic waves of a medium-wave infrared band and a long-wave infrared band through the synergistic effect.
In the scheme, the metamaterial infrared absorber composed of the metal film layer 2, the medium isolation layer 3 and the metal structure 4 supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber can absorb electromagnetic waves in both a medium-wave infrared band and a long-wave infrared band by utilizing the synergistic effect. Meanwhile, the metamaterial infrared absorber is formed by a metal film layer 2, a medium isolation layer 3 and a metal structure 4 which are sequentially stacked, the metal film layer 2 and the medium isolation layer 3 both adopt an integrated circuit CMOS compatible process to grow the metal film layer 2 on the substrate 1, the medium isolation layer 3 grows on the metal film layer 2, only the metal structure 4 at the topmost layer needs to be manufactured with a microstructure, the microstructure can be formed through one-step photoetching, the processing is easy, and the processing difficulty is reduced.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A metamaterial infrared absorber, comprising:
a substrate;
a metal film layer disposed on the substrate;
a dielectric isolation layer disposed on the metal film layer;
the metal structures are arranged on the medium isolating layer and are distributed at intervals periodically, and each metal structure has C4 symmetry;
and the metamaterial infrared absorber consisting of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs the electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
2. The metamaterial infrared absorber of claim 1, wherein the thickness of the dielectric spacer layer is set to a thickness such that the absorption rate of the electromagnetic wave of the metamaterial infrared absorber has absorption peaks in the mid-wave infrared band and the long-wave infrared band, respectively.
3. The metamaterial infrared absorber of claim 2, wherein the set thickness is 0.6 μm to 0.8 μm.
4. The metamaterial infrared absorber of claim 2, wherein the material of the dielectric spacer layer is silicon, gallium antimonide, or gallium arsenide.
5. The metamaterial infrared absorber of claim 1, wherein the metal structure is a disk structure, a cross-shaped structure, or a square structure.
6. The metamaterial infrared absorber of claim 5, wherein the metal structure is a disk structure and the diameter of the disk structure is 0.6 μm to 0.7 μm.
7. The metamaterial infrared absorber of claim 6, wherein the thickness of the disk structure is between 10nm and 15 nm.
8. The metamaterial infrared absorber of claim 5, wherein the centers of two adjacent disk structures are spaced apart by 1.0 μm to 1.6 μm.
9. The metamaterial infrared absorber of claim 1, wherein the thickness of the metal film layer is not less than 100 nm.
10. A method of making a metamaterial infrared absorber as in claim 1, comprising:
providing a substrate;
growing a metal film layer on the substrate;
growing a medium isolation layer on the metal film layer;
forming metal structures on the medium isolation layer, wherein the metal structures are periodically distributed at intervals, and each metal structure has C4 symmetry;
and the metamaterial infrared absorber consisting of the metal film layer, the medium isolation layer and the metal structure supports the synergistic effect of Fabry-Perot cavity resonance, propagation surface plasmon and local surface plasmon resonance, so that the metamaterial infrared absorber absorbs the electromagnetic waves of the medium-wave infrared band and the long-wave infrared band through the synergistic effect.
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